CN110445474A - Thin film bulk acoustic wave resonator and its manufacturing method and thin-film bulk acoustic wave filter - Google Patents

Thin film bulk acoustic wave resonator and its manufacturing method and thin-film bulk acoustic wave filter Download PDF

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Publication number
CN110445474A
CN110445474A CN201810417104.0A CN201810417104A CN110445474A CN 110445474 A CN110445474 A CN 110445474A CN 201810417104 A CN201810417104 A CN 201810417104A CN 110445474 A CN110445474 A CN 110445474A
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film
thickness
layer
wafer substrate
electrode layer
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唐滨
赖志国
杨清华
赖亚明
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Guizhou In World Cohen Microelectronics Co Ltd
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Guizhou In World Cohen Microelectronics Co Ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
    • H03H3/0076—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks for obtaining desired frequency or temperature coefficients
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02157—Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/205—Constructional features of resonators consisting of piezoelectric or electrostrictive material having multiple resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/027—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the microelectro-mechanical [MEMS] type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414—Resonance frequency
    • H03H2003/0421—Modification of the thickness of an element
    • H03H2003/0428—Modification of the thickness of an element of an electrode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414—Resonance frequency
    • H03H2003/0421—Modification of the thickness of an element
    • H03H2003/0435—Modification of the thickness of an element of a piezoelectric layer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H2009/155—Constructional features of resonators consisting of piezoelectric or electrostrictive material using MEMS techniques

Abstract

The present invention provides a kind of manufacturing methods of film bulk acoustic resonator structure, comprising: provides wafer substrate；Bragg reflecting layer is formed in wafer substrate；Lower electrode layer, piezoelectric layer and upper electrode layer three-layer thin-film are sequentially formed on Bragg reflecting layer to form multiple thin film bulk acoustic wave resonator units in wafer substrate, wherein, the thickness of the lower electrode layer, the piezoelectric layer, the double-layer films in the upper electrode layer in wafer substrate is distributed according to the first variation tendency, thickness of another layer film in wafer substrate is distributed according to the second variation tendency, and the first variation tendency is opposite with the second variation tendency.Frequency distribution range of the thin film bulk acoustic wave resonator unit in full wafer wafer substrate can be effectively reduced by implementing the present invention.Correspondingly, the present invention also provides a kind of film bulk acoustic resonator structure and thin-film bulk acoustic wave filters.

Description

Thin film bulk acoustic wave resonator and its manufacturing method and thin-film bulk acoustic wave filter
Technical field
The present invention relates to MEMS device manufacturing field more particularly to a kind of thin film bulk acoustic wave resonator and its manufacturing method with And thin-film bulk acoustic wave filter.
Background technique
From analog radio frequency mechanics of communication at the beginning of 90 generation of last century by since developing, RF front-end module has been increasingly becoming logical Interrogate the core component of equipment.In all RF front-end modules, filter has become that growth is most violent, development prospect is maximum Component.With the high speed development of wireless communication technique, 5G communications protocol is increasingly mature, various aspects of the market to radio-frequency filter More stringent standard can be also proposed.The performance of filter is determined by the resonator element for forming filter.In existing filter In wave device, thin film bulk acoustic wave resonator (FBAR) is because its is small in size, insertion loss is low, Out-of-band rejection is big, quality factor are high, work The features such as frequency is high, power capacity is big and antistatic impact capacity is good becomes one of the filter of most suitable 5G application.
Thin film bulk acoustic wave resonator can be divided into two types according to lower surface reflecting layer difference: air lumen type bulk acoustic resonance Device and Bragg reflection stratotype bulk acoustic wave resonator.Air lumen type bulk acoustic wave resonator successively includes substrate, lower electricity from bottom to up Pole layer, piezoelectric layer and upper electrode layer, form the cavity for being used for reflected acoustic wave energy between lower electrode layer and substrate.Prague Reflection stratotype bulk acoustic wave resonator successively includes substrate, Bragg reflecting layer, lower electrode layer, piezoelectric layer and powers on from bottom to up Pole layer.Wherein, total acoustic thickness of lower electrode layer, piezoelectric layer and upper electrode layer three-layer thin-film determines above two bulk acoustic wave The frequency of resonator.Specifically, total acoustic thickness of upper electrode layer, piezoelectric layer and lower electrode layer three-layer thin-film is thicker, on The frequency for stating two kinds of bulk acoustic wave resonators is lower.
Due to the limitation of prior art itself, cause prepare lower electrode layer, piezoelectric layer and upper electrode layer this three Acoustic thickness distribution of every layer film in wafer substrate can show inhomogeneities during layer film.Wherein, film The exemplary distribution mode of acoustic thickness include: (1) film acoustic thickness from the center of wafer substrate along half radial wafer substrate Edge be incremented by；(2) acoustic thickness of film successively decreases from the center of wafer substrate along the edge of half radial wafer substrate；(3) thin The acoustic thickness of film is incremented by along the diametrical direction of wafer substrate.In addition, in the prior art, lower electrode layer, piezoelectric layer and on The distribution variation tendency usually having the same of its acoustic thickness of this three-layer thin-film of electrode layer, that is to say, that lower electrode layer, piezoelectricity Layer and upper electrode layer its acoustic thickness are to be incremented by from the center of wafer substrate along the edge of half radial wafer substrate or be It successively decreases from the center of wafer substrate along the edge of half radial wafer substrate, or is passed along the diametrical direction of wafer substrate Increase.Due to inhomogeneities of the film in wafer substrate with acoustic thickness, acoustics of every layer film in wafer substrate in addition Thickness distribution and variation tendency having the same, therefore lead to the thin film bulk acoustic wave resonator on the different location of wafer substrate Lower electrode layer, total acoustic thickness of piezoelectric layer and upper electrode layer three-layer thin-film it is inconsistent, so as to cause wafer substrate not Frequency with the thin film bulk acoustic wave resonator on position is inconsistent, is distributed in a wider range.With air lumen type body sound It is illustrated for wave resonator.Fig. 1 (a) is please referred to, Fig. 1 (a) is to form multiple air in wafer substrate in the prior art Diagrammatic cross-section of the structure along wafer substrate diameter after lumen type bulk acoustic wave resonator.As shown, air lumen type bulk acoustic wave is humorous The device that shakes successively includes wafer substrate 10, lower electrode layer 11, piezoelectric layer 12 and upper electrode layer 13,11 He of lower electrode layer from bottom to up Cavity 14 is formed between wafer substrate 10.Wherein, the acoustic thickness distribution of lower electrode layer 11, piezoelectric layer 12 and upper electrode layer 13 It is to be incremented by from the center of wafer substrate 10 along the edge of half radial wafer substrate 10.In this way, lower electrode layer 11, piezoelectric layer 12 and total acoustic thickness of 13 three-layer thin-film of upper electrode layer be also from the center of wafer substrate 10 along half radial wafer substrate 10 Edge be incremented by.In this case, positioned at 10 central area of wafer substrate and positioned at the air chamber of 10 fringe region of wafer substrate Type bulk acoustic wave resonator (will be located at the air lumen type bulk acoustic wave resonator circle of central area and fringe region using dotted line in figure It compares out), there are larger differences between total acoustic thickness of 13 three-layer thin-film of lower electrode layer 11, piezoelectric layer 12 and upper electrode layer It is different, so as to cause the air lumen type bulk acoustic wave resonator in different zones in same wafer substrate 10 frequency distribution one compared with In a wide range of.It should be noted that structure as shown in the figure is diametrically arranged in wafer substrate, there are six air lumen type bulk acoustic wave is humorous The device that shakes is only schematic example.Similarly, Fig. 1 (b) and Fig. 1 (c) is also to form multiple skies in wafer substrate in the prior art Diagrammatic cross-section of the structure along wafer substrate diameter after air-chamber pattern bulk acoustic wave resonator.Unlike Fig. 1 (a), Fig. 1 (b) The acoustic thickness distribution of the lower electrode layer 11 of hollow air-chamber pattern bulk acoustic wave resonator, piezoelectric layer 12 and upper electrode layer 13 be from The center of wafer substrate 10 is successively decreased along the edge of half radial wafer substrate 10, in this way, lower electrode layer 11, piezoelectric layer 12 and Total acoustic thickness of 13 three-layer thin-film of upper electrode layer is also from the center of wafer substrate 10 along the edge of half radial wafer substrate 10 Successively decrease.In this case, positioned at 10 central area of wafer substrate and positioned at the air lumen type body sound of 10 fringe region of wafer substrate Wave resonator (being located at central area using dotted line in figure to iris out with the air lumen type bulk acoustic wave resonator of fringe region) is compared, There are larger differences between total acoustic thickness of 13 three-layer thin-film of lower electrode layer 11, piezoelectric layer 12 and upper electrode layer, to lead Cause the frequency distribution of the air lumen type bulk acoustic wave resonator in same wafer substrate 10 in different zones in a larger range. The acoustic thickness distribution of the lower electrode layer 11, piezoelectric layer 12 and upper electrode layer 13 of the hollow air-chamber pattern bulk acoustic wave resonator of Fig. 1 (c) It is to be incremented by along the direction of diameter where section, in this way, which lower electrode layer 11, piezoelectric layer 12 and 13 3 layers of upper electrode layer are thin Total acoustic thickness of film is also to be incremented by along the direction of diameter where section.In this case, it is located at the diameter in wafer substrate 10 The air lumen type bulk acoustic wave resonator of two end regions (will be located at the air lumen type of central area and fringe region using dotted line in figure Bulk acoustic wave resonator is irised out) compare, total acoustic thickness of 13 three-layer thin-film of lower electrode layer 11, piezoelectric layer 12 and upper electrode layer it Between there are larger differences, so as to cause the frequency of the air lumen type bulk acoustic wave resonator in different zones in same wafer substrate 10 It is distributed in a larger range.Since the frequency distribution of the thin film bulk acoustic wave resonator in same wafer substrate is relatively wide at one In the range of, therefore cause finally to be formed by film bulk acoustic filtering based on the thin film bulk acoustic wave resonator in wafer substrate The working frequency of device is also distributed about in a wider range.
In order to guarantee the performance of thin-film bulk acoustic wave filter, need that thin-film bulk acoustic wave filter is made to be worked as far as possible at one It is not distributed across in a wider range in relatively narrow range of target frequencies.Currently, the most common mode is to pass through benefit The working frequency of thin-film bulk acoustic wave filter is corrected with exposure mask revised law or focused ion beam revised law.Wherein, exposure mask is corrected Method is using mask plate after forming thin-film bulk acoustic wave filter to the film in range of target frequencies that works in wafer substrate Bulk accoustic wave filter is blocked, and then would operate in the thin-film bulk acoustic wave filter region lower than range of target frequencies The upper electrode layer of thin film bulk acoustic wave resonator remove certain acoustic thickness, make the working frequency liter of thin-film bulk acoustic wave filter In height to range of target frequencies.Focused ion beam amendment rule is the hot spot for being 0.1mm-10mm by ion beam focusing to radius, By adjusting ion beam energy or the mode of scanning speed, the thin film bulk acoustic wave resonator that will be specified in wafer substrate in region Upper electrode layer remove certain acoustic thickness, so that the working frequency of thin-film bulk acoustic wave filter is increased to range of target frequencies It is interior.Although above two mode can correct the working frequency of thin-film bulk acoustic wave filter, due to the limitation of prior art, If thin-film bulk acoustic wave filter working frequency is distributed in a larger range in wafer substrate, it is modified to will lead to frequency It takes a long time, to need to increase the thickness of test PAD, and then leads to the increase of product cost.In addition, if thin in wafer substrate Membrane body acoustic wave filter working frequency is distributed in a larger range, then need repeatedly correct repeatedly can just make it is as more as possible The working frequency of thin-film bulk acoustic wave filter reach in range of target frequencies, and repeatedly correct repeatedly, be easy to cause thin-film body The yield rate of acoustic wave filter is impaired.
Summary of the invention
In order to overcome the above-mentioned defects in the prior art, the present invention provides a kind of systems of film bulk acoustic resonator structure Method is made, which includes:
Wafer substrate is provided；
Bragg reflecting layer is formed in the wafer substrate；
Lower electrode layer, piezoelectric layer and upper electrode layer three-layer thin-film are sequentially formed on the Bragg reflecting layer in institute State and form multiple thin film bulk acoustic wave resonator units in wafer substrate, wherein the lower electrode layer, the piezoelectric layer, it is described on Thickness of the double-layer films in the wafer substrate in electrode layer is distributed according to the first variation tendency, another layer film is described Thickness in wafer substrate is distributed according to the second variation tendency, and first variation tendency is opposite with second variation tendency.
According to an aspect of the present invention, in the manufacturing method, first variation tendency is the thickness of film from described Along half radial edges incremented/decremented, second variation tendency is that the thickness of film is served as a contrast from the wafer at the center of wafer substrate Successively decrease/be incremented by along half radial edges in the center at bottom；Or first variation tendency is the thickness of film along the wafer substrate Diametrical direction is incremented by, and second variation tendency is that the thickness of film successively decreases along the diametrical direction of the wafer substrate.
According to another aspect of the present invention, in the manufacturing method, lower electricity is sequentially formed on the Bragg reflecting layer Before pole layer, piezoelectric layer and upper electrode layer three-layer thin-film, the manufacturing method further include: establish lower electrode layer, piezoelectric layer respectively And thickness model of the upper electrode layer in wafer substrate, and according to the thickness model and the mesh of preset three-layer thin-film Mark overall thickness determines the preparation technology parameter of the three-layer thin-film；Lower electrode layer, pressure are sequentially formed on the Bragg reflecting layer Electric layer and upper electrode layer three-layer thin-film include: to be sequentially formed on the Bragg reflecting layer according to the preparation technology parameter Lower electrode layer, piezoelectric layer and upper electrode layer three-layer thin-film.
According to the present invention to see another aspect, in the manufacturing method, the thickness is the acoustic thickness of film.
According to the present invention to see another aspect, in the manufacturing method, the expression formula of the acoustic thickness of the film is as follows: The π of d (t)=2 ft/v, wherein f indicates the centre frequency of thin film bulk acoustic wave resonator unit, and t indicates the physical thickness of film, v table Show sound wave along the spread speed of thin film physics thickness direction, d (t) indicates acoustics of the film on position of the physical thickness equal to t Thickness.
The present invention also provides a kind of film bulk acoustic resonator structure, which includes wafer Substrate and multiple laminated construction in the wafer substrate, multiple laminated construction form multiple thin with the wafer substrate Membrane body acoustic resonator unit, each laminated construction successively include Bragg reflecting layer, lower electrode layer, piezoelectric layer from bottom to up And upper electrode layer, in which:
The double-layer films in lower electrode layer, piezoelectric layer, upper electrode layer in the multiple thin film bulk acoustic wave resonator unit Be distributed according to the first variation tendency in the thickness in the wafer substrate, thickness of another layer film in the wafer substrate according to Second variation tendency distribution, wherein the first variation tendency is opposite with the second variation tendency.
According to an aspect of the present invention, in the film bulk acoustic resonator structure, first variation tendency is film Thickness from the center of the wafer substrate along half radial edges incremented/decremented, second variation tendency is the thickness of film Successively decrease/be incremented by from the center of the wafer substrate along half radial edges；Or first variation tendency is the thickness of film along institute The diametrical direction for stating wafer substrate is incremented by, and second variation tendency is diametrical direction of the thickness along the wafer substrate of film Successively decrease.
According to another aspect of the present invention, in the film bulk acoustic resonator structure, the multiple film bulk acoustic is humorous The overall thickness of vibration its lower electrode layer of device unit, piezoelectric layer and upper electrode layer is all the same.
According to a further aspect of the invention, in the film bulk acoustic resonator structure, the thickness is the acoustics of film Thickness.
According to a further aspect of the invention, in the film bulk acoustic resonator structure, the acoustic thickness of the film Expression formula is as follows: the π of d (t)=2 ft/v, wherein f indicates the centre frequency of thin film bulk acoustic wave resonator unit, and t indicates film Physical thickness, v indicate sound wave along the spread speed of thin film physics thickness direction, and d (t) indicates film in physical thickness equal to t's Acoustic thickness on position.
The present invention also provides a kind of thin-film bulk acoustic wave filter, which includes at least one film Bulk acoustic wave resonator unit, wherein at least one thin film bulk acoustic wave resonator unit uses above-mentioned thin film bulk acoustic wave resonator Thin film bulk acoustic wave resonator unit in structure.
The present invention provides a kind of manufacturing method of film bulk acoustic resonator structure, which includes:
Wafer substrate is provided；
The wafer substrate is etched to form groove；
The groove is filled using expendable material and the upper surface of the wafer substrate is planarized；
Lower electrode layer, piezoelectric layer and the top electrode for covering the groove are sequentially formed in the upper surface of the wafer substrate Layer three-layer thin-film in the wafer substrate to form multiple thin film bulk acoustic wave resonator units, wherein the lower electrode layer, institute State the thickness of piezoelectric layer, the double-layer films in the upper electrode layer in the wafer substrate be distributed according to the first variation tendency, Thickness of another layer film in the wafer substrate is distributed according to the second variation tendency, first variation tendency and described the Two variation tendencies are opposite；
It removes the expendable material and forms cavity between the lower electrode layer and the wafer substrate.
According to an aspect of the present invention, in the manufacturing method, first variation tendency is the thickness of film from described Along half radial edges incremented/decremented, second variation tendency is that the thickness of film is served as a contrast from the wafer at the center of wafer substrate Successively decrease/be incremented by along half radial edges in the center at bottom；Or first variation tendency is the thickness of film along the wafer substrate Diametrical direction is incremented by, and second variation tendency is that the thickness of film successively decreases along the diametrical direction of the wafer substrate.
According to another aspect of the present invention, it in the manufacturing method, sequentially forms and covers in the upper surface of the wafer substrate It covers before the lower electrode layer, piezoelectric layer and upper electrode layer three-layer thin-film of the groove, the manufacturing method further include: establish respectively The thickness model of lower electrode layer, piezoelectric layer and upper electrode layer in wafer substrate, and set according to the thickness model and in advance The target overall thickness of fixed three-layer thin-film determines the preparation technology parameter of the three-layer thin-film；The upper surface of the wafer substrate according to Secondary lower electrode layer, piezoelectric layer and the upper electrode layer three-layer thin-film for forming the covering groove includes: according to the preparation process Parameter sequentially forms the lower electrode layer, piezoelectric layer and upper electrode layer three for covering the groove in the upper surface of the wafer substrate Layer film.
According to a further aspect of the invention, in the manufacturing method, the thickness is the acoustic thickness of film.
According to a further aspect of the invention, in the manufacturing method, the expression formula of the acoustic thickness of the film is as follows: d (t)=2 π ft/v, wherein f indicates the centre frequency of thin film bulk acoustic wave resonator unit, and t indicates the physical thickness of film, v table Show sound wave along the spread speed of thin film physics thickness direction, d (t) indicates film film on position of the physical thickness equal to t Acoustic thickness.
The present invention also provides a kind of film bulk acoustic resonator structure, which includes wafer Substrate and multiple laminated construction in the wafer substrate, multiple laminated construction form multiple thin with the wafer substrate Membrane body acoustic resonator unit, each laminated construction from bottom to up successively include lower electrode layer, piezoelectric layer and upper electrode layer, Cavity is respectively formed between lower electrode layer and the wafer substrate in each laminated construction, in which:
The double-layer films in lower electrode layer, piezoelectric layer, upper electrode layer in the multiple thin film bulk acoustic wave resonator unit Be distributed according to the first variation tendency in the thickness in the wafer substrate, thickness of another layer film in the wafer substrate according to Second variation tendency distribution, wherein the first variation tendency is opposite with the second variation tendency.
According to an aspect of the present invention, in the film bulk acoustic resonator structure, first variation tendency is film Thickness from the center of the wafer substrate along half radial edges incremented/decremented, second variation tendency is the thickness of film Successively decrease/be incremented by from the center of the wafer substrate along half radial edges；Or first variation tendency is the thickness of film along institute The diametrical direction for stating wafer substrate is incremented by, and second variation tendency is diametrical direction of the thickness along the wafer substrate of film Successively decrease.
According to another aspect of the present invention, in the film bulk acoustic resonator structure, the multiple film bulk acoustic is humorous The overall thickness of vibration its lower electrode layer of device unit, piezoelectric layer and upper electrode layer is all the same.
According to a further aspect of the invention, in the film bulk acoustic resonator structure, the thickness is the acoustics of film Thickness.
According to a further aspect of the invention, in the film bulk acoustic resonator structure, the acoustic thickness of the film Expression formula is as follows: the π of d (t)=2 ft/v, wherein f indicates the centre frequency of thin film bulk acoustic wave resonator unit, and t indicates film Physical thickness, v indicate sound wave along the spread speed of thin film physics thickness direction, and d (t) indicates film in physical thickness equal to t's Acoustic thickness on position.
The present invention also provides a kind of thin-film bulk acoustic wave filter, which includes at least one film Bulk acoustic wave resonator unit, wherein at least one thin film bulk acoustic wave resonator unit uses above-mentioned thin film bulk acoustic wave resonator Thin film bulk acoustic wave resonator unit in structure.
Film bulk acoustic resonator structure provided by the present invention and its manufacturing method pass through control lower electrode layer, piezoelectric layer And the variation tendency of the thickness distribution of upper electrode layer three-layer thin-film, so that the double-layer films in the three-layer thin-film are in wafer substrate On thickness be distributed according to the first variation tendency, thickness of another layer film in wafer substrate according to the first variation tendency phase Anti- the second variation tendency distribution, in this way, which the overall thickness of the three-layer thin-film can be effectively improved in wafer substrate Uniformity, so as to the frequency distribution model of the thin film bulk acoustic wave resonator unit effectively reduced in same wafer substrate Enclose, so can be effectively reduced be subsequently formed thin-film bulk acoustic wave filter needed for frequency times of revision and duration, not only The production cost for advantageously reducing film bulk acoustic resonator structure and thin-film bulk acoustic wave filter, also advantageously improves thin-film body The yield rate of acoustic wave filter.Correspondingly, based on the thin film bulk acoustic wave resonator unit institute shape in structure provided by the present invention At thin-film bulk acoustic wave filter guarantee work in range of target frequencies under the premise of, have it is at low cost, high yield rate Advantage.
Detailed description of the invention
By reading a detailed description of non-restrictive embodiments in the light of the attached drawings below, of the invention other Feature, objects and advantages will become more apparent upon:
Fig. 1 (a) is the structure edge after forming multiple air lumen type bulk acoustic wave resonators in wafer substrate in the prior art The diagrammatic cross-section of wafer substrate diameter, wherein upper electrode layer, piezoelectric layer and lower electrode layer in air lumen type bulk acoustic wave resonator Total acoustic thickness from the center of wafer substrate along half radial edges be incremented by；
Fig. 1 (b) is the structure edge after forming multiple air lumen type bulk acoustic wave resonators in wafer substrate in the prior art The diagrammatic cross-section of wafer substrate diameter, wherein upper electrode layer, piezoelectric layer and lower electrode layer in air lumen type bulk acoustic wave resonator Total acoustic thickness successively decrease from the center of wafer substrate along half radial edges；
Fig. 1 (c) is the structure edge after forming multiple air lumen type bulk acoustic wave resonators in wafer substrate in the prior art The diagrammatic cross-section of wafer substrate diameter, wherein upper electrode layer, piezoelectric layer and lower electrode layer in air lumen type bulk acoustic wave resonator Total acoustic thickness along wafer substrate diametrical direction be incremented by；
Fig. 2 is the manufacturing method process of the film bulk acoustic resonator structure of a specific embodiment according to the present invention Figure；
Fig. 3 (a) to Fig. 3 (e) is according to a preferred embodiment of the present invention according to the sound of flow manufacturing thin-film body shown in Fig. 2 The diagrammatic cross-section in each stage of wave resonator structure；
Fig. 4 (a) to Fig. 4 (e) is according to a further advantageous embodiment of the invention according to flow manufacturing thin-film body shown in Fig. 2 The diagrammatic cross-section in each stage of acoustic resonator structure；
Fig. 5 is the manufacturing method process of the film bulk acoustic resonator structure of another specific embodiment according to the present invention Figure；
Fig. 6 (a) to Fig. 6 (g) is according to a preferred embodiment of the present invention according to the sound of flow manufacturing thin-film body shown in Fig. 5 The diagrammatic cross-section in each stage of wave resonator structure；
Fig. 7 (a) to Fig. 7 (g) is according to a further advantageous embodiment of the invention according to flow manufacturing thin-film body shown in Fig. 5 The diagrammatic cross-section in each stage of acoustic resonator structure.
The same or similar appended drawing reference represents the same or similar component in attached drawing.
Specific embodiment
For a better understanding and interpretation of the present invention, below in conjunction with attached drawing, the present invention is described in further detail.
The present invention provides a kind of manufacturing method of film bulk acoustic resonator structure, specifically a kind of Prague is anti- Penetrate the manufacturing method of stratotype bulk acoustic resonator structure.Referring to FIG. 2, Fig. 2 is a specific embodiment according to the present invention The manufacturing method flow chart of film bulk acoustic resonator structure.As shown in Fig. 2, the manufacturing method includes:
In step s101, wafer substrate is provided；
In step s 102, Bragg reflecting layer is formed in the wafer substrate；
In step s 103, lower electrode layer, piezoelectric layer and upper electrode layer are sequentially formed on the Bragg reflecting layer Three-layer thin-film in the wafer substrate to form multiple thin film bulk acoustic wave resonator units, wherein the lower electrode layer, described Thickness of the double-layer films in the wafer substrate in piezoelectric layer, the upper electrode layer is distributed according to the first variation tendency, is another Thickness of the thin film in the wafer substrate is distributed according to the second variation tendency, wherein first variation tendency and institute It is opposite to state the second variation tendency.
The content of above-mentioned steps S101 to step S103 are described in detail below.
Specifically, in step s101, wafer substrate is provided, wherein the material of the wafer substrate can be silicon, oxidation Silicon, quartz, diamond, glass etc..It will be appreciated by persons skilled in the art that the material of wafer substrate be not limited in it is above-mentioned Citing, other all materials for being used to form wafer substrate, making it have supporting role are included in the model that the present invention is protected In enclosing, for brevity, it will not enumerate herein.In the present embodiment, the specification of wafer substrate can be 6 inches, 8 English It is very little, 12 inches etc..
In step s 102, Bragg reflecting layer is formed in wafer substrate, the Bragg reflecting layer is by high acoustic impedance layer It is alternately stacked and to be formed with low acoustic impedance layer, wherein total number of plies of high acoustic impedance layer and low acoustic impedance layer is preferably 4 to 8 layers.It is high The material of acoustic impedance layer can be one of tungsten (W), molybdenum (Mo), aluminium nitride (AlN), platinum (Pt) or any combination thereof, in a low voice The material of impedance layer can be silica (SiO2) etc..It is 4 layers to cloth with total number of plies of high acoustic impedance layer and low acoustic impedance layer The formation in glug reflecting layer is illustrated.In a specific embodiment, it is formed and is covered first in wafer substrate in step (a) The film of lid wafer substrate whole surface, is then patterned to be formed on the predetermined position of the wafer substrate film High acoustic impedance layer (or low acoustic impedance layer)；It is entire that covering wafer substrate is then continuously formed in wafer substrate in step (b) Then the film on surface is patterned to form low acoustic impedance on the high acoustic impedance layer (or low acoustic impedance layer) film Layer (or high acoustic impedance layer)；(a) and (b) is repeated the above steps to form Bragg reflection on the predetermined position of wafer substrate Layer.In another specific embodiment, the place different from previous embodiment is, without to covering wafer substrate whole surface Film be patterned, that is to say, that be alternatively formed in wafer substrate covering wafer substrate whole surface acoustic impedance Layer and low acoustic impedance layer, to form the Bragg reflecting layer of covering wafer substrate whole surface.In another specific embodiment In, 4 layer films of covering wafer substrate whole surface are sequentially formed in wafer substrate, then disposably to 4 layer film It is patterned to form Bragg reflecting layer on the predetermined position of the wafer substrate.Furthermore it should also be noted that, being directed to For adjacent high acoustic impedance layer and low acoustic impedance layer, it can be completely covered between the two or partially cover, herein Any restriction is not done to this.
In step s 103, firstly, forming covering Bragg reflecting layer and wafer substrate upper surface in wafer substrate The first film layer, then by being patterned the first film layer to form lower electrode layer on Bragg reflecting layer. Wherein, the first film layer can be for example, by the side such as physical vapour deposition (PVD) (PVD), chemical vapor deposition (CVD), spin coating or printing Formula is formed.In the present embodiment, the first film layer is formed using conductive material, wherein the conductive material Material includes but is not limited to one of molybdenum (Mo), tungsten (W), aluminium (Al), titanium (Ti), copper (Cu), ruthenium (Ru), platinum (Pt) or it is any Combination.Herein it should be noted that lower electrode layer can cover entire Bragg reflecting layer or only covering part Prague Any restriction is not done in reflecting layer to this herein.
Then, formed in wafer substrate covering lower electrode layer, Bragg reflecting layer and wafer substrate upper surface the Two film layers, then by being patterned second film layer to form piezoelectric layer on the bottom electrode.Wherein, the second film Layer can be formed for example, by modes such as physical vapour deposition (PVD) (PVD), chemical vapor deposition (CVD), spin coating or printings.In this reality Apply in example, the material of the second film layer include but is not limited to aluminium nitride (AlN), mix scandium aluminium nitride (AlScN), zinc oxide (ZnO), One of lead zirconate titanate (PZT) or any combination thereof.Herein it should be noted that piezoelectric layer can cover entirely lower electrode Layer, can also only covering part lower electrode layer, do not do any restriction to this herein.
Finally, forming covering piezoelectric layer, lower electrode layer, table in Bragg reflecting layer and wafer substrate in wafer substrate The third film layer in face, then by being patterned the third film layer to form upper electrode layer over the piezoelectric layer.Wherein, Third film layer can be for example, by modes shapes such as physical vapour deposition (PVD) (PVD), chemical vapor deposition (CVD), spin coating or printings At.In the present embodiment, third film layer is formed using conductive material, and in the present embodiment, third film layer is adopted It is formed with conductive material, wherein the conductive material includes but is not limited to molybdenum (Mo), tungsten (W), aluminium (Al), one of titanium (Ti), copper (Cu), ruthenium (Ru), platinum (Pt) or any combination thereof.So far it is formd in wafer substrate more A Bragg reflection stratotype bulk acoustic wave resonator unit.Herein it should be noted that upper electrode layer can cover entire piezoelectric layer, Can also only covering part piezoelectric layer, do not do any restriction to this herein.
During forming above-mentioned lower electrode layer, piezoelectric layer and upper electrode layer, by the way that reasonable preparation process is arranged Parameter, such as chamber pressure, power, bias, gas mixing ratio, flow, magnetic field position, magnetic field size, position of silicon wafer, target location Deng, can make in the three-layer thin-film, wherein thickness changing trend of the double-layer films in wafer substrate it is identical and with it is another Thickness changing trend of the layer film in wafer substrate is opposite.Hereinafter, the thickness by the double-layer films in wafer substrate becomes Change trend is known as the first variation tendency, and thickness changing trend of another layer film in wafer substrate is known as the second variation and is become Gesture.Specifically, can be the thickness of lower electrode layer and piezoelectric layer in wafer substrate be distributed according to the first variation tendency, top electrode Thickness of the layer in wafer substrate is distributed according to the second variation tendency；It is also possible to lower electrode layer and upper electrode layer in wafer substrate On thickness be distributed according to the first variation tendency, thickness of the piezoelectric layer in wafer substrate is distributed according to the second variation tendency；Also Can be the thickness of piezoelectric layer and upper electrode layer in wafer substrate be distributed according to the first variation tendency, upper electrode layer wafer serve as a contrast Thickness on bottom is distributed according to the second variation tendency.In the present embodiment, the first variation tendency and the second variation tendency include with Lower three kinds of situations:
(1) first variation tendency is that the thickness of film is incremented by from the center of wafer substrate along half radial edges, the second variation Trend is that the thickness of film successively decreases from the center of wafer substrate along half radial edges；
(2) first variation tendencies are that the thickness of film successively decreases from the center of wafer substrate along half radial edges, the second variation Trend is that the thickness of film is incremented by from the center of wafer substrate along half radial edges；
(3) first variation tendencies are that the thickness of film is incremented by along the diametrical direction of wafer substrate, and the second variation tendency is thin The thickness of film successively decreases along the same diametrical direction of wafer substrate.
It should be noted that the above-mentioned center from wafer substrate is along half radial edges incremented/decremented and along wafer substrate The incremental variation tendency of diametrical direction be only preferred embodiment, it is in other embodiments, all to can be achieved and be in opposite shape The first variation tendency and the second variation tendency of state each fall within the present invention protect in the range of, for brevity, herein not It repeats again.
It is passed it should also be noted that, being directed to the thickness that the first variation tendency is film along the diametrical direction of wafer substrate Increasing, the second variation tendency are the case where thickness of film successively decrease along the same diametrical direction of wafer substrate, and there are following two shapes At mode:
First way is realized only by setting preparation technology parameter.Specifically, it is assumed that three-layer thin-film is along wafer Scheduled diametrical direction variation, the scheduled diametrical direction are indicated in substrate with A- > B.After wafer substrate is placed, pass through Rationally setting preparation technology parameter, so that its thickness of double-layer films in three-layer thin-film is passed along diametrical direction A- > B of wafer substrate Increase, its thickness of another layer film successively decreases along diametrical direction A- > B of wafer substrate.
The second way be except through setting preparation technology parameter except, can also by rotating wafer substrate come reality It is existing.Specifically, it is assumed that three-layer thin-film scheduled diametrical direction variation along wafer substrate, the scheduled diametrical direction is with A- > B table Show.After wafer substrate is placed, by the way that preparation technology parameter is rationally arranged, electrode under being formed first in wafer substrate Layer, the lower electrode layer are incremented by along diametrical direction A- > B of wafer substrate；Then, wafer substrate is rotated 180 °；Then under this Piezoelectric layer is formed on electrode layer, makes the thickness of the piezoelectric layer along wafer substrate diametrical direction B- > A by the way that preparation technology parameter is arranged It is incremented by, by having rotated 180 °, therefore the thickness of piezoelectric layer is incremented by along wafer substrate diametrical direction B- > A and is equivalent to serve as a contrast along wafer Bottom diametrical direction A- > B successively decreases；Then, then by wafer substrate 180 ° are rotated；Then upper electrode layer is formed on the piezoelectric layer, led to Crossing setting preparation technology parameter is incremented by the thickness of the upper electrode layer along wafer substrate diametrical direction A- > B.
It should also be noted that, in the present embodiment, the thickness of film refers to the acoustic thickness of film, i.e. lower electrode layer Thickness refer to the acoustic thickness of lower electrode layer, the thickness of piezoelectric layer refers to the acoustic thickness of piezoelectric layer, upper electrode layer Thickness refers to the acoustic thickness of upper electrode layer.The acoustic thickness of film is defined as follows herein:
The π of d (t)=2 ft/v
Wherein, f indicates the centre frequency of thin film bulk acoustic wave resonator unit, and t indicates the physical thickness of film, v expression sound Spread speed of the wave along thin film physics thickness direction, acoustic thickness of d (t) the expression film on position of the physical thickness equal to t.
It will be appreciated by persons skilled in the art that the definition of above-mentioned film acoustic thickness is preferred embodiment, at it In his embodiment, the acoustic thickness of film can also no longer be arranged one by one herein for brevity using other definition modes It lifts.In addition, the thickness of film can also refer to the physical thickness of film.
First due to double-layer films its thickness distribution in lower electrode layer, piezoelectric layer and upper electrode layer three-layer thin-film becomes Second variation tendency of change trend and other its thickness distribution of thin film is opposite, therefore the thickness distribution of the three-layer thin-film Complementation is formd to a certain extent.Compared with the thickness distribution of three-layer thin-film in the prior art all has Similar trend, The manufacturing method of film bulk acoustic resonator structure provided by the present invention is by forming opposite thin of thickness distribution variation tendency Film, so that certain complementation is formd between three-layer thin-film in thickness distribution, in this way, which this three layers can be effectively improved Uniformity of the overall thickness of film in wafer substrate, so as to the thin-film body effectively reduced in same wafer substrate The frequency distribution range of acoustic resonator unit, and then can be effectively reduced and be subsequently formed needed for thin-film bulk acoustic wave filter Frequency times of revision and duration are not only advantageous to reduce the life of film bulk acoustic resonator structure and thin-film bulk acoustic wave filter Cost is produced, the yield rate of thin-film bulk acoustic wave filter is also advantageously improved.
Preferably, in order to guarantee lower electrode layer, piezoelectric layer and upper electrode layer three-layer thin-film overall thickness have it is good Uniformity, before forming lower electrode layer, piezoelectric layer and upper electrode layer three-layer thin-film, manufacturing method provided by the present invention is also It include: the thickness model for establishing lower electrode layer, piezoelectric layer and upper electrode layer respectively in wafer substrate, and according to the thickness mode The target overall thickness of type and preset three-layer thin-film determines the preparation technology parameter of the three-layer thin-film.Specifically, firstly, The thickness mode of lower electrode layer, piezoelectric layer and upper electrode layer in wafer substrate is established respectively based on thin film preparation process parameter Type, wherein in the present embodiment, for the thickness model with function representation, the preparation technology parameter of film is oneself of the thickness model Variable.It is directed to for every layer film, preparation technology parameter selects film when different numerical value to be formed by thickness distribution pattern Also different.Then according to the target overall thickness of preset three-layer thin-film and the thickness model of the three-layer thin-film, determine every The specific preparation technology parameter of thin film.After the specific preparation technology parameter of every thin film has been determined, according to the preparation Technological parameter sequentially forms lower electrode layer, piezoelectric layer and upper electrode layer on Bragg reflecting layer.Wherein, three-layer thin-film Target overall thickness be generally set to a fixed numbers.That is, if going shape based on the specific preparation technology parameter If lower electrode layer, piezoelectric layer and upper electrode layer, the final overall thickness of the three-layer thin-film at various locations on be identical , in this way, i.e. can guarantee finally be formed by wafer substrate Bragg reflection stratotype bulk acoustic wave resonator unit its The uniformity of the overall thickness of lower electrode layer, piezoelectric layer and upper electrode layer three-layer thin-film.Herein it should be noted that due to preparation There is a certain error for technique, therefore Bragg reflection stratotype bulk acoustic wave resonator unit is finally formed by wafer substrate The overall thickness of its lower electrode layer, piezoelectric layer and upper electrode layer three-layer thin-film usually fluctuates near the fixed numbers, this feelings Under condition, be finally formed by wafer substrate the frequency distribution of Bragg reflection stratotype bulk acoustic wave resonator unit one compared with In narrow range.Due to as having made its frequency distribution relatively narrow at one as possible when forming thin film bulk acoustic wave resonator unit It is even all the same in range, therefore can effectively guarantee to be formed by thin-film body based on the thin film bulk acoustic wave resonator unit The working frequency of acoustic wave filter be also distributed about it is even all the same in a relatively narrow range, in this way, can be effectively The modified number of subsequent frequencies and duration are reduced, even completely without progress frequency amendment.With need in the prior art The case where carrying out the amendment of repeated multiple times frequency is compared, and the general objective of the film thickness model and three-layer thin-film that pre-establish is passed through Thickness determines the mode of specific preparation technology parameter, can farthest reduce the modified number of frequency and duration, so One, it can greatly simplify frequency amendment processing step, greatly reduce production cost and greatly improve final film The yield rate of bulk accoustic wave filter.
The manufacturing method of thin film bulk acoustic wave resonator provided by the present invention is said with two preferred embodiments below It is bright.
Fig. 3 (a) to Fig. 3 (e) is please referred to, Fig. 3 (a) to Fig. 3 (e) is according to a preferred embodiment of the present invention according to figure The diagrammatic cross-section in each stage of flow manufacturing film bulk acoustic resonator structure shown in 2.Specifically, as shown in Fig. 3 (a), Wafer substrate 100 is provided.As shown in Fig. 3 (b), Bragg reflecting layer is formed in the wafer substrate 100, in the present embodiment, Bragg reflecting layer is from bottom to up by the first high acoustic impedance layer 110a, the first low acoustic impedance layer 110b, the second high acoustic impedance layer 110c and the second low acoustic impedance layer 110d composition.It should be noted that by cross-section structure shown in Fig. 3 (b) it is found that being served as a contrast in wafer Three Bragg reflection stratotype bulk acoustic wave resonator units, those skilled in the art will be formed on the position corresponding with the section of bottom Member is it is understood that cross-section structure shown in Fig. 3 (b) is only schematic example, in actual production, resonator in wafer substrate The quantity needs of unit are determined according to specific design requirement.In addition, high acoustic impedance layer and being hindered in a low voice in Bragg reflecting layer The particular number of anti-layer is also determined by actual demand.As shown in Fig. 3 (c), lower electrode layer 120 is formed on Bragg reflecting layer, The acoustic thickness of the lower electrode layer 120 is incremented by from the center of wafer substrate 100 along half radial edges.As shown in Fig. 3 (d), under Piezoelectric layer 130 is formed on electrode layer 120, the acoustic thickness of the piezoelectric layer 130 is from the center of wafer substrate 100 along half radial edges Successively decrease, in this way, which piezoelectric layer 130 and lower electrode layer 120 is made to form complementation, i.e. lower electrode layer in acoustic thickness distribution The portion that the big part of 120 acoustic thickness is corresponding with the small part of 130 acoustic thickness of piezoelectric layer, 120 acoustic thickness of lower electrode layer is small Divide corresponding with the big part of 130 acoustic thickness of piezoelectric layer.In the present embodiment, after piezoelectric layer 130 is formed, 120 He of lower electrode layer Total acoustic thickness of 130 double-layer films of voltage layer successively decreases from the center of wafer substrate 100 along half radial edges.Such as Fig. 3 (e) institute Show, form upper electrode layer 140 on piezoelectric layer 130, the acoustic thickness of the upper electrode layer 140 is from the center edge of wafer substrate 100 Half radial edges are incremented by, in this way, make the acoustic thickness and lower electrode layer 120 and two layers of piezoelectric layer 130 of upper electrode layer 140 Total acoustic thickness forms complementation in distribution, i.e., the big part of lower electrode layer 120 and the total acoustic thickness of piezoelectric layer 130 with power on The part and piezoelectric layer that 140 acoustic thickness of layer small part in pole is corresponding, lower electrode layer 120 and the total acoustic thickness of piezoelectric layer 130 are small The big part of 130 acoustic thickness is corresponding.The lower electrode layer 120 that is ultimately formed, piezoelectric layer 130 and 140 3 layers of lower electrode layer Total acoustic thickness of film shows uniformity in wafer substrate 100.
Please refer to Fig. 4 (a) to Fig. 4 (e), Fig. 4 (a) to Fig. 4 (e) be according to a further advantageous embodiment of the invention according to The diagrammatic cross-section in each stage of flow manufacturing film bulk acoustic resonator structure shown in Fig. 2.Specifically, such as Fig. 4 (a) institute Show, wafer substrate 100 is provided.As shown in Fig. 4 (b), Bragg reflecting layer is formed in the wafer substrate 100, in the present embodiment In, Bragg reflecting layer is from bottom to up by the first high acoustic impedance layer 110a, the first low acoustic impedance layer 110b, the second high acoustic impedance layer 110c and the second low acoustic impedance layer 110d composition.As shown in Fig. 4 (c), lower electrode layer 120 is formed on Bragg reflecting layer, it should The acoustic thickness of lower electrode layer 120 is incremented by along the diametrical direction of wafer substrate.As shown in Fig. 4 (d), the shape on lower electrode layer 120 At piezoelectric layer 130, the acoustic thickness of the piezoelectric layer 130 successively decreases along the same diametrical direction of wafer substrate, in this way, to press Electric layer 130 and lower electrode layer 120 formed in acoustic thickness distribution it is complementary, i.e., the big part of 120 acoustic thickness of lower electrode layer with 130 acoustic thickness of part and piezoelectric layer that the small part of 130 acoustic thickness of piezoelectric layer is corresponding, 120 acoustic thickness of lower electrode layer is small Big part is corresponding.In the present embodiment, piezoelectric layer 130 formed after, 130 double-layer films of lower electrode layer 120 and voltage layer it is total Acoustic thickness successively decreases along the diametrical direction of wafer substrate 100.As shown in Fig. 4 (e), upper electrode layer is formed on piezoelectric layer 130 140, the acoustic thickness of the upper electrode layer 140 is incremented by along the same diametrical direction of wafer substrate, in this way, make upper electrode layer 140 acoustic thickness forms complementary, i.e., lower electricity with two layers of total acoustic thickness of lower electrode layer 120 and piezoelectric layer 130 in distribution Pole layer 120 and the total acoustic thickness of piezoelectric layer 130 it is big part is corresponding with the small part of 140 acoustic thickness of upper electrode layer, lower electrode Layer 120 and the total acoustic thickness of piezoelectric layer 130 it is small part it is corresponding with the big part of 130 acoustic thickness of piezoelectric layer.It is ultimately formed Total acoustic thickness of 140 three-layer thin-film of lower electrode layer 120, piezoelectric layer 130 and lower electrode layer be in wafer substrate 100 Reveal uniformity.
The present invention provides a kind of film bulk acoustic resonator structure, specifically a kind of Bragg reflection stratotype bulk acoustic wave is humorous Vibration device structure.Bragg reflection stratotype bulk acoustic resonator structure provided by the present invention uses aforementioned Bragg reflection stratotype body The manufacturing method of acoustic resonator structure is made.The film bulk acoustic resonator structure include wafer substrate and be located at the wafer Multiple laminated construction on substrate, multiple laminated construction and the wafer substrate form multiple thin film bulk acoustic wave resonator lists Member, wherein each laminated construction successively includes Bragg reflecting layer, lower electrode layer, piezoelectric layer and top electrode from bottom to up Layer, in which:
The double-layer films in lower electrode layer, piezoelectric layer, upper electrode layer in the multiple thin film bulk acoustic wave resonator unit Be distributed according to the first variation tendency in the thickness in the wafer substrate, thickness of another layer film in the wafer substrate according to Second variation tendency distribution, wherein the first variation tendency is opposite with the second variation tendency.
In the following, the various pieces of above-mentioned thin film bulk acoustic wave resonator provided by the present invention are described in detail.
Specifically, the material of wafer substrate can be silicon, silica, quartz, diamond, glass etc..Those skilled in the art It is understood that the material of wafer substrate is not limited in the example above, other are all to be used to form wafer substrate, makes it member Material with supporting role be included in the present invention protect in the range of, for brevity, will not enumerate herein. In the present embodiment, the specification of wafer substrate can be 6 inches, 8 inches, 12 inches etc..
Multiple laminated construction are provided in wafer substrate, multiple laminated construction and wafer substrate form multiple thin-film bodies Acoustic resonator unit.In the present embodiment, which is Bragg reflection stratotype bulk acoustic resonance Device unit, wherein each laminated construction from bottom to up successively include Bragg reflecting layer, lower electrode layer, piezoelectric layer and on Electrode layer.
Bragg reflecting layer, which is alternately stacked by high acoustic impedance layer and low acoustic impedance layer, to be formed, wherein high acoustic impedance layer and Total number of plies of low acoustic impedance layer is preferably 4 to 8 layers.The material of high acoustic impedance layer can be tungsten (W), molybdenum (Mo), aluminium nitride (AlN), one of platinum (Pt) or any combination thereof, the material of low acoustic impedance layer can be silica (SiO2) etc..It needs Illustrate, be directed to for adjacent high acoustic impedance layer and low acoustic impedance layer, can be completely covered between the two can also be with Part covers, and does not do any restriction to this herein.In addition it is also necessary to which explanation, Bragg reflecting layer can be covering wafer One en-block construction of substrate whole surface is also possible to be distributed in multiple independent structures in wafer substrate, herein also not to this Do any restriction.
Lower electrode layer is formed using conductive material, wherein the conductive material includes but is not limited to One of molybdenum (Mo), tungsten (W), aluminium (Al), titanium (Ti), copper (Cu), ruthenium (Ru), platinum (Pt) or any combination thereof.It needs herein Illustrate, lower electrode layer can cover entire Bragg reflecting layer or only covering part Bragg reflecting layer, right herein This does not do any restriction.
The material of piezoelectric layer includes but is not limited to aluminium nitride (AlN), mixes scandium aluminium nitride (AlScN), zinc oxide (ZnO), zirconium One of lead titanates (PZT) or any combination thereof.Herein it should be noted that piezoelectric layer can cover entire lower electrode layer, Can also only covering part lower electrode layer, do not do any restriction to this herein.
Upper electrode layer is formed using conductive material, wherein the conductive material includes but is not limited to One of molybdenum (Mo), tungsten (W), aluminium (Al), titanium (Ti), copper (Cu), ruthenium (Ru), platinum (Pt) or any combination thereof.It needs herein Illustrate, upper electrode layer can cover entire piezoelectric layer or only covering part piezoelectric layer, not do any limit to this herein It is fixed.
In the present embodiment, the thickness of lower electrode layer, piezoelectric layer, the double-layer films in upper electrode layer in the wafer substrate It is distributed according to the distribution of the first variation tendency, thickness of another layer film in the wafer substrate according to the second variation tendency, first Variation tendency is opposite with the second variation tendency.Specifically, can be the thickness of lower electrode layer and piezoelectric layer in wafer substrate by It is distributed according to the distribution of the first variation tendency, thickness of the upper electrode layer in wafer substrate according to the second variation tendency；Under being also possible to The thickness of electrode layer and upper electrode layer in wafer substrate is distributed according to the first variation tendency, thickness of the piezoelectric layer in wafer substrate Degree is distributed according to the second variation tendency；It can also be the thickness of piezoelectric layer and upper electrode layer in wafer substrate according to the first variation Trend distribution, thickness of the upper electrode layer in wafer substrate are distributed according to the second variation tendency.In the present embodiment, the first variation Trend and the second variation tendency include the following three types situation:
(1) first variation tendency is that the thickness of film is incremented by from the center of wafer substrate along half radial edges, the second variation Trend is that the thickness of film successively decreases from the center of wafer substrate along half radial edges；
(2) first variation tendencies are that the thickness of film successively decreases from the center of wafer substrate along half radial edges, the second variation Trend is that the thickness of film is incremented by from the center of wafer substrate along half radial edges；
(3) first variation tendencies are that the thickness of film is incremented by along the diametrical direction of wafer substrate, and the second variation tendency is thin The thickness of film successively decreases along the same diametrical direction of wafer substrate.
It should be noted that the above-mentioned center from wafer substrate is along half radial edges incremented/decremented and along wafer substrate The incremental variation tendency of diametrical direction be only preferred embodiment, it is in other embodiments, all to can be achieved and be in opposite shape The first variation tendency and the second variation tendency of state each fall within the present invention protect in the range of, for brevity, herein not It repeats again.
Preferably, its lower electrode of multiple Bragg reflection stratotype bulk acoustic wave resonator units is formed by wafer substrate The overall thickness of layer, piezoelectric layer and upper electrode layer is all the same, in this way, can make all Prague formed in wafer substrate Reflect stratotype bulk acoustic wave resonator unit working frequency having the same.It will be appreciated by persons skilled in the art that due to system The limitation of technique is made, the working frequency of all Bragg reflection stratotype bulk acoustic wave resonator units formed in wafer substrate may It is not fully identical, and be distributed across in a lesser frequency range.
Preferably, the thickness of film refers to that the acoustic thickness of film, the i.e. thickness of lower electrode layer refer to lower electrode layer Acoustic thickness, piezoelectric layer thickness refer to the acoustic thickness of piezoelectric layer, the thickness of upper electrode layer refers to upper electrode layer Acoustic thickness.The acoustic thickness of film is defined as follows herein:
The π of d (t)=2 ft/v
Wherein, f indicates the centre frequency of thin film bulk acoustic wave resonator unit, and t indicates the physical thickness of film, v expression sound Spread speed of the wave along thin film physics thickness direction, acoustic thickness of d (t) the expression film on position of the physical thickness equal to t.
It will be appreciated by persons skilled in the art that the definition of above-mentioned film acoustic thickness is preferred embodiment, at it In his embodiment, the acoustic thickness of film can also no longer be arranged one by one herein for brevity using other definition modes It lifts.In addition, the thickness of film can also refer to the physical thickness of film.
Film bulk acoustic resonator structure provided by the present invention is illustrated with two preferred embodiments below.It please join Examine Fig. 3 (e) and Fig. 4 (e).As shown in Fig. 3 (e), film bulk acoustic resonator structure include wafer substrate 100 and be located at the crystalline substance Multiple laminated construction on circle substrate 100, wherein each laminated construction constitutes one with the wafer substrate 100 being disposed below Bragg reflection stratotype bulk acoustic wave resonator unit.In the present embodiment, each laminated construction successively includes by from bottom to up One high acoustic impedance layer 110a, the first low acoustic impedance layer 110b, the second high acoustic impedance layer 110c and the second low acoustic impedance layer 110d structure At Bragg reflecting layer, lower electrode layer 120, piezoelectric layer 130 and upper electrode layer 140, wherein the acoustics of lower electrode layer 120 Thickness is incremented by from the center of wafer substrate 100 along half radial edges, and the acoustic thickness of piezoelectric layer 130 is from wafer substrate 100 The heart successively decreases along half radial edges, and the acoustic thickness of upper electrode layer 140 is incremented by from the center of wafer substrate 100 along half radial edges. In this way, which total acoustics of 140 three-layer thin-film of the lower electrode layer 120 being ultimately formed, piezoelectric layer 130 and lower electrode layer is thick Degree shows uniformity, i.e., multiple Bragg reflection stratotype bulk acoustic wave resonators in wafer substrate 100 in wafer substrate 100 Working frequency be evenly distributed.As shown in Fig. 4 (e), film bulk acoustic resonator structure wafer substrate 100 and be located at the crystalline substance Multiple laminated construction on circle substrate 100, wherein each laminated construction constitutes one with the wafer substrate 100 being disposed below Bragg reflection stratotype bulk acoustic wave resonator unit.In the present embodiment, each laminated construction successively includes by from bottom to up One high acoustic impedance layer 110a, the first low acoustic impedance layer 110b, the second high acoustic impedance layer 110c and the second low acoustic impedance layer 110d structure At Bragg reflecting layer, lower electrode layer 120, piezoelectric layer 130 and upper electrode layer 140, wherein the acoustics of lower electrode layer 120 Thickness is incremented by along the diametrical direction of wafer substrate, and the acoustic thickness of piezoelectric layer 130 successively decreases along the same diametrical direction of wafer substrate, The acoustic thickness of upper electrode layer 140 is incremented by along the same diametrical direction of wafer substrate.In this way, the lower electrode being ultimately formed Layer 120, total acoustic thickness of 140 three-layer thin-film of piezoelectric layer 130 and lower electrode layer show uniformly in wafer substrate 100 Property, i.e., the working frequency of multiple Bragg reflection stratotype bulk acoustic wave resonators in wafer substrate 100 is evenly distributed.
Due to multiple Bragg reflecting layers in Bragg reflection stratotype bulk acoustic resonator structure provided by the present invention Of double-layer films its thickness distribution in type bulk acoustic wave resonator its lower electrode layer, piezoelectric layer and upper electrode layer three-layer thin-film Second variation tendency of one variation tendency and other its thickness distribution of thin film is opposite, therefore the thickness of the three-layer thin-film Distribution forms complementation to a certain extent.Similar trend is all had with the thickness distribution of three-layer thin-film in the prior art Bragg reflection stratotype bulk acoustic resonator structure is compared, Bragg reflection stratotype bulk acoustic wave resonator knot provided by the present invention Structure is by forming the opposite film of thickness distribution variation tendency, so that foring in thickness distribution between three-layer thin-film certain Complementation, in this way, uniformity of the overall thickness of the three-layer thin-film in wafer substrate can be effectively improved, so as to have Effect ground reduces the frequency distribution range for the Bragg reflection stratotype bulk acoustic wave resonator unit being located in same wafer substrate, in turn Frequency times of revision and duration needed for being subsequently formed thin-film bulk acoustic wave filter can be effectively reduced, be not only advantageous to drop The production cost of low Bragg reflection stratotype bulk acoustic resonator structure and thin-film bulk acoustic wave filter, also advantageously improves film The yield rate of bulk accoustic wave filter.
The present invention also provides a kind of thin-film bulk acoustic wave filter, which includes at least one film Bulk acoustic wave resonator unit, wherein at least one thin film bulk acoustic wave resonator unit uses previously described film bulk acoustic Thin film bulk acoustic wave resonator unit (i.e. Prague in resonator structure (i.e. Bragg reflection stratotype bulk acoustic resonator structure) Reflect stratotype bulk acoustic wave resonator unit) it realizes.Typically, thin-film bulk acoustic wave filter provided by the present invention includes series-connected stage Bragg reflection stratotype bulk acoustic wave resonator and parallel level Bragg reflection stratotype bulk acoustic wave resonator, wherein series-connected stage Bradley Lattice reflection stratotype bulk acoustic wave resonator is connected between input terminal and output end by concatenated mode, parallel level Bragg reflection Stratotype bulk acoustic wave resonator is then located between two series-connected stage Bragg reflection stratotype bulk acoustic wave resonators or is located at series-connected stage Between Bragg reflection stratotype bulk acoustic wave resonator and input/output terminal.Since film bulk acoustic provided by the present invention filters The structure of device has numerous possibilities, for brevity, herein no longer to all possible structures of thin-film bulk acoustic wave filter It is enumerated.It should be noted that in actual production, it is humorous in previously described Bragg reflection stratotype bulk acoustic wave first Thin-film bulk acoustic wave filter is formed in vibration device structure, wherein it is anti-that each thin-film bulk acoustic wave filter includes at least a Prague Stratotype bulk acoustic wave resonator unit is penetrated, can generally form multiple thin-film bulk acoustic wave filters in a wafer substrate, it is then right The wafer substrate is cut to obtain multiple thin-film bulk acoustic wave filter.Based on Bragg reflecting layer provided by the present invention Bragg reflection stratotype bulk acoustic wave resonator unit in type bulk acoustic resonator structure is formed by thin-film bulk acoustic wave filter Under the premise of guaranteeing that work is in range of target frequencies, has the advantages that at low cost, high yield rate.
The present invention also provides a kind of manufacturing method of film bulk acoustic resonator structure, specifically a kind of air chamber The manufacturing method of type bulk acoustic resonator structure.Referring to FIG. 5, Fig. 5 is the thin of another specific embodiment according to the present invention The manufacturing method flow chart of film bulk acoustic resonator structure.As shown in figure 5, the manufacturing method includes:
In step s 201, wafer substrate is provided；
In step S202, the wafer substrate is etched to form groove；
In step S203, the groove is filled using expendable material and the upper surface of the wafer substrate is carried out flat Change；
In step S204, the lower electrode layer for covering the groove, pressure are sequentially formed in the upper surface of the wafer substrate Electric layer and upper electrode layer three-layer thin-film in the wafer substrate to form multiple thin film bulk acoustic wave resonator units, wherein The thickness of the lower electrode layer, the piezoelectric layer, the double-layer films in the upper electrode layer in the wafer substrate is according to The distribution of one variation tendency, thickness of another layer film in the wafer substrate are distributed according to the second variation tendency, and described first Variation tendency is opposite with second variation tendency；
In step S205, removes the expendable material and form sky between the lower electrode layer and the wafer substrate Chamber.
In the following, the content to step S201 to step S205 is described in detail.
In step S201 with the step in the hereinbefore manufacturing method of Bragg reflection stratotype bulk acoustic resonator structure S101 is identical, therefore can be not repeated to describe herein for brevity with reference to the content of hereinbefore corresponding portion.
In step S202, wafer substrate is etched to form groove.
In step S203, groove is filled up by deposition expendable material such as phosphorus doped silica (PSG), and uses The mode of chemically mechanical polishing (CMP) planarizes the upper surface of wafer substrate.
In step S204, lower electrode layer, the piezoelectric layer for covering the groove are sequentially formed in the upper surface of wafer substrate And upper electrode layer three-layer thin-film, the thickness of lower electrode layer, piezoelectric layer, the double-layer films in upper electrode layer in wafer substrate are pressed It is distributed according to the distribution of the first variation tendency, thickness of another layer film in wafer substrate according to the second variation tendency, wherein first Variation tendency is opposite with the second variation tendency.The forming process of lower electrode layer, piezoelectric layer and upper electrode layer and hereinbefore Bradley The step S103 that lattice reflect in the manufacturing method of stratotype bulk acoustic resonator structure is identical, therefore can be with reference to hereinbefore corresponding portion The content divided is not repeated to describe herein for brevity.
In step S205, expendable material is removed using modes such as such as hydrofluoric acid solution dissolutions and is served as a contrast in lower electrode and wafer The cavity for being used for reflected acoustic wave is formed between bottom.So far multiple air lumen type bulk acoustic wave resonator lists are formd in wafer substrate Member.
Preferably, the thickness of film refers to that the acoustic thickness of film, the i.e. thickness of lower electrode layer refer to lower electrode layer Acoustic thickness, piezoelectric layer thickness refer to the acoustic thickness of piezoelectric layer, the thickness of upper electrode layer refers to upper electrode layer Acoustic thickness.The acoustic thickness of film is defined as follows herein:
The π of d (t)=2 ft/v
Wherein, f indicates the centre frequency of thin film bulk acoustic wave resonator unit, and t indicates the physical thickness of film, v expression sound Spread speed of the wave along thin film physics thickness direction, acoustic thickness of d (t) the expression film on position of the physical thickness equal to t.
It will be appreciated by persons skilled in the art that the definition of above-mentioned film acoustic thickness is preferred embodiment, at it In his embodiment, the acoustic thickness of film can also no longer be arranged one by one herein for brevity using other definition modes It lifts.In addition, the thickness of film can also refer to the physical thickness of film.
Preferably, in order to guarantee lower electrode layer, piezoelectric layer and upper electrode layer three-layer thin-film overall thickness have it is good Uniformity, before forming lower electrode layer, piezoelectric layer and upper electrode layer three-layer thin-film, manufacturing method provided by the present invention is also It include: the thickness model for establishing lower electrode layer, piezoelectric layer and upper electrode layer respectively in wafer substrate, and according to the thickness mode The target overall thickness of type and preset three-layer thin-film determines the preparation technology parameter of the three-layer thin-film.This part can also be with With reference to the content of corresponding portion in hereinbefore Bragg reflection stratotype bulk acoustic wave resonator manufacturing method, for brevity herein It is not repeated to describe.
The manufacturing method of thin film bulk acoustic wave resonator provided by the present invention is said with two preferred embodiments below It is bright.
Fig. 6 (a) to Fig. 6 (g) is please referred to, Fig. 6 (a) to Fig. 6 (g) is according to a preferred embodiment of the present invention according to figure The diagrammatic cross-section in each stage of flow manufacturing film bulk acoustic resonator structure shown in 5.Specifically, as shown in Fig. 6 (a), Wafer substrate 100 is provided.As shown in Fig. 6 (b), etching forms groove 201 in the wafer substrate 200.As shown in Fig. 6 (c), benefit Groove 201 is filled with expendable material 202 and 200 upper surface of wafer substrate is planarized.As shown in Fig. 6 (d), served as a contrast in wafer Lower electrode layer 210 is formed on bottom 200, the acoustic thickness of the lower electrode layer 210 is from the center of wafer substrate 200 along half radial edges It is incremented by.As shown in Fig. 6 (e), piezoelectric layer 220 is formed on lower electrode layer 210, the acoustic thickness of the piezoelectric layer 220 is served as a contrast from wafer Successively decrease along half radial edges at the center at bottom 200.As shown in Fig. 6 (f), upper electrode layer 230 is formed on piezoelectric layer 220, this is powered on The acoustic thickness of pole layer 230 is incremented by from the center of wafer substrate 200 along half radial edges.As shown in Fig. 6 (g), material is sacrificed in removal Material forms cavity 201 between lower electrode layer 210 and wafer substrate 200.In this way, the lower electrode layer 210 being ultimately formed, Total acoustic thickness of 230 three-layer thin-film of piezoelectric layer 220 and lower electrode layer shows uniformity in wafer substrate 200.
Please refer to Fig. 7 (a) to Fig. 7 (g), Fig. 7 (a) to Fig. 7 (g) be according to a further advantageous embodiment of the invention according to The diagrammatic cross-section in each stage of flow manufacturing film bulk acoustic resonator structure shown in Fig. 5.Specifically, such as Fig. 7 (a) institute Show, wafer substrate 100 is provided.As shown in Fig. 7 (b), etching forms groove 201 in the wafer substrate 200.Such as Fig. 7 (c) institute Show, fill groove 201 using expendable material 202 and 200 upper surface of wafer substrate is planarized.As shown in Fig. 7 (d), In Lower electrode layer 210 is formed in wafer substrate 200, the acoustic thickness of the lower electrode layer 210 is incremented by along the diametrical direction of wafer substrate. As shown in Fig. 7 (e), piezoelectric layer 220 is formed on lower electrode layer 210, the acoustic thickness of the piezoelectric layer 220 is along the same of wafer substrate One diametrical direction is successively decreased.As shown in Fig. 7 (f), upper electrode layer 230, the acoustics of the upper electrode layer 230 are formed on piezoelectric layer 220 Thickness is incremented by along the same diametrical direction of wafer substrate.As shown in Fig. 7 (g), expendable material is removed in lower electrode layer 210 and wafer Cavity 201 is formed between substrate 200.In this way, the lower electrode layer 210 being ultimately formed, piezoelectric layer 220 and lower electrode layer Total acoustic thickness of 230 three-layer thin-films shows uniformity in wafer substrate 200.
The present invention also provides a kind of thin film bulk acoustic wave resonator, specifically a kind of air lumen type bulk acoustic wave resonator knot Structure.Air chamber bulk acoustic resonator structure provided by the present invention uses the manufacturer of aforementioned air chamber bulk acoustic resonator structure Method is made.The film bulk acoustic resonator structure includes wafer substrate and multiple laminated construction in the wafer substrate, Multiple laminated construction and the wafer substrate form multiple thin film bulk acoustic wave resonator units, wherein each laminated construction from Under it is supreme successively include lower electrode layer, piezoelectric layer and upper electrode layer, lower electrode layer and the crystalline substance in each laminated construction Cavity is respectively formed between circle substrate, in which:
The double-layer films in lower electrode layer, piezoelectric layer, upper electrode layer in the multiple thin film bulk acoustic wave resonator unit Be distributed according to the first variation tendency in the thickness in the wafer substrate, thickness of another layer film in the wafer substrate according to Second variation tendency distribution, wherein the first variation tendency is opposite with the second variation tendency.
In the following, the various pieces of above-mentioned thin film bulk acoustic wave resonator provided by the present invention are described in detail.
Specifically, the material of wafer substrate can be silicon, silica, quartz, diamond, glass etc..Those skilled in the art It is understood that the material of wafer substrate is not limited in the example above, other are all to be used to form wafer substrate, makes it member Material with supporting role be included in the present invention protect in the range of, for brevity, will not enumerate herein. In the present embodiment, the specification of wafer substrate can be 6 inches, 8 inches, 12 inches etc..
Multiple laminated construction are provided in wafer substrate, multiple laminated construction and wafer substrate form multiple thin-film bodies Acoustic resonator unit.In the present embodiment, which is air lumen type bulk acoustic wave resonator unit, Wherein, each laminated construction includes successively from bottom to up lower electrode layer, piezoelectric layer and upper electrode layer, in each laminated construction Lower electrode layer and wafer substrate between be respectively formed cavity.
Lower electrode layer is formed using conductive material, wherein the conductive material includes but is not limited to One of molybdenum (Mo), tungsten (W), aluminium (Al), titanium (Ti), copper (Cu), ruthenium (Ru), platinum (Pt) or any combination thereof.It needs herein Illustrate, lower electrode layer can cover entire cavity or only covering part cavity, not do any restriction to this herein.
The material of piezoelectric layer includes but is not limited to aluminium nitride (AlN), mixes scandium aluminium nitride (AlScN), zinc oxide (ZnO), zirconium One of lead titanates (PZT) or any combination thereof.Herein it should be noted that piezoelectric layer can cover entire lower electrode layer, Can also only covering part lower electrode layer, do not do any restriction to this herein.
Upper electrode layer is formed using conductive material, wherein the conductive material includes but is not limited to One of molybdenum (Mo), tungsten (W), aluminium (Al), titanium (Ti), copper (Cu), ruthenium (Ru), platinum (Pt) or any combination thereof.It needs herein Illustrate, upper electrode layer can cover entire piezoelectric layer or only covering part piezoelectric layer, not do any limit to this herein It is fixed.
In the present embodiment, the thickness of lower electrode layer, piezoelectric layer, the double-layer films in upper electrode layer in the wafer substrate It is distributed according to the distribution of the first variation tendency, thickness of another layer film in the wafer substrate according to the second variation tendency, first Variation tendency is opposite with the second variation tendency.Specifically, can be the thickness of lower electrode layer and piezoelectric layer in wafer substrate by It is distributed according to the distribution of the first variation tendency, thickness of the upper electrode layer in wafer substrate according to the second variation tendency；Under being also possible to The thickness of electrode layer and upper electrode layer in wafer substrate is distributed according to the first variation tendency, thickness of the piezoelectric layer in wafer substrate Degree is distributed according to the second variation tendency；It can also be the thickness of piezoelectric layer and upper electrode layer in wafer substrate according to the first variation Trend distribution, thickness of the upper electrode layer in wafer substrate are distributed according to the second variation tendency.In the present embodiment, the first variation Trend and the second variation tendency include the following three types situation:
(1) first variation tendency is that the thickness of film is incremented by from the center of wafer substrate along half radial edges, the second variation Trend is that the thickness of film successively decreases from the center of wafer substrate along half radial edges；
(2) first variation tendencies are that the thickness of film successively decreases from the center of wafer substrate along half radial edges, the second variation Trend is that the thickness of film is incremented by from the center of wafer substrate along half radial edges；
(3) first variation tendencies are that the thickness of film is incremented by along the diametrical direction of wafer substrate, and the second variation tendency is thin The thickness of film successively decreases along the same diametrical direction of wafer substrate.
It should be noted that the above-mentioned center from wafer substrate is along half radial edges incremented/decremented and along wafer substrate The incremental variation tendency of diametrical direction be only preferred embodiment, it is in other embodiments, all to can be achieved and be in opposite shape The first variation tendency and the second variation tendency of state each fall within the present invention protect in the range of, for brevity, herein not It repeats again.
Preferably, multiple air chamber bulk acoustic wave resonator units its lower electrode layers, piezoelectric layer are formed by wafer substrate And the overall thickness of upper electrode layer is all the same, in this way, which all air lumen type bulk acoustic waves formed in wafer substrate can be made Resonator element working frequency having the same.It will be appreciated by persons skilled in the art that due to the limitation of manufacturing process, it is brilliant The working frequency of all air lumen type bulk acoustic wave resonator units formed on circle substrate may be not fully identical, but is distributed In a lesser frequency range.
Preferably, the thickness of film refers to that the acoustic thickness of film, the i.e. thickness of lower electrode layer refer to lower electrode layer Acoustic thickness, piezoelectric layer thickness refer to the acoustic thickness of piezoelectric layer, the thickness of upper electrode layer refers to upper electrode layer Acoustic thickness.The acoustic thickness of film is defined as follows herein:
The π of d (t)=2 ft/v
Wherein, f indicates the centre frequency of thin film bulk acoustic wave resonator unit, and t indicates the physical thickness of film, v expression sound Spread speed of the wave along thin film physics thickness direction, acoustic thickness of d (t) the expression film on position of the physical thickness equal to t.
It will be appreciated by persons skilled in the art that the definition of above-mentioned film acoustic thickness is preferred embodiment, at it In his embodiment, the acoustic thickness of film can also no longer be arranged one by one herein for brevity using other definition modes It lifts.In addition, the thickness of film can also refer to the physical thickness of film.
Film bulk acoustic resonator structure provided by the present invention is illustrated with two preferred embodiments below.It please join Examine Fig. 6 (g) and Fig. 7 (g).As shown in Fig. 6 (g), film bulk acoustic resonator structure include wafer substrate 220 and be located at the crystalline substance Multiple laminated construction on circle substrate 200, wherein each laminated construction constitutes one with the wafer substrate 200 being disposed below Air lumen type bulk acoustic wave resonator unit.In the present embodiment, each laminated construction successively includes lower electrode layer from bottom to up 210, piezoelectric layer 220 and upper electrode layer 230 form cavity 201 between wafer substrate 200 and lower electrode layer 210, wherein under The acoustic thickness of electrode layer 210 is incremented by from the center of wafer substrate 200 along half radial edges, the acoustic thickness of piezoelectric layer 220 from The center of wafer substrate 200 is successively decreased along half radial edges, and the acoustic thickness of upper electrode layer 230 is from the center edge of wafer substrate 200 Half radial edges are incremented by.In this way, the lower electrode layer 210 being ultimately formed, piezoelectric layer 220 and 230 3 layers of lower electrode layer Total acoustic thickness of film shows uniformity, i.e., multiple air lumen type bodies in wafer substrate 200 in wafer substrate 200 The working frequency of acoustic resonator is evenly distributed.As shown in Fig. 7 (g), film bulk acoustic resonator structure wafer substrate 200 with And multiple laminated construction in the wafer substrate 200, wherein each laminated construction and the wafer substrate being disposed below 200 constitute an air lumen type bulk acoustic wave resonator unit.In the present embodiment, each laminated construction successively includes from bottom to up Lower electrode layer 210, piezoelectric layer 220 and upper electrode layer 230 form cavity 201 between wafer substrate 200 and lower electrode layer 210, Wherein, the acoustic thickness of lower electrode layer 210 is incremented by along the diametrical direction of wafer substrate, and the acoustic thickness of piezoelectric layer 220 is along wafer The same diametrical direction of substrate is successively decreased, and the acoustic thickness of upper electrode layer 230 is incremented by along the same diametrical direction of wafer substrate.So One, the total acoustic thickness for 230 three-layer thin-film of lower electrode layer 210, piezoelectric layer 220 and lower electrode layer being ultimately formed exists Uniformity, i.e., the work of multiple Bragg reflection stratotype bulk acoustic wave resonators in wafer substrate 100 are showed in wafer substrate 200 Working frequency is evenly distributed.
Due to multiple air lumen type bulk acoustic resonances in air lumen type bulk acoustic resonator structure provided by the present invention First variation tendency of double-layer films its thickness distribution in device its lower electrode layer, piezoelectric layer and upper electrode layer three-layer thin-film and In addition the second variation tendency of its thickness distribution of thin film is opposite, therefore the thickness distribution of the three-layer thin-film is in certain journey Complementation is formd on degree.The air lumen type body sound of Similar trend is all had with the thickness distribution of three-layer thin-film in the prior art Wave resonator structure is compared, and air lumen type bulk acoustic resonator structure provided by the present invention is become by forming thickness distribution variation The opposite film of gesture, so that certain complementation is formd between three-layer thin-film in thickness distribution, in this way, can be effectively Uniformity of the overall thickness of the three-layer thin-film in wafer substrate is improved, so as to effectively reduce positioned at same wafer substrate On air lumen type bulk acoustic wave resonator unit frequency distribution range, and then can be effectively reduced and be subsequently formed thin-film body sound Frequency times of revision and duration needed for wave filter are not only advantageous to reduce air lumen type bulk acoustic resonator structure and thin The production cost of membrane body acoustic wave filter also advantageously improves the yield rate of thin-film bulk acoustic wave filter.
The present invention also provides a kind of thin-film bulk acoustic wave filter, which includes an at least thin-film body Acoustic resonator unit, wherein at least one thin film bulk acoustic wave resonator unit is humorous using previously described film bulk acoustic Thin film bulk acoustic wave resonator unit (i.e. air lumen type bulk acoustic wave in vibration device structure (i.e. air lumen type bulk acoustic resonator structure) Resonator element) it realizes.Typically, thin-film bulk acoustic wave filter provided by the present invention includes series-connected stage air chamber stratotype body sound Wave resonator and parallel level air chamber stratotype bulk acoustic wave resonator, wherein series-connected stage air lumen type bulk acoustic wave resonator passes through string The mode of connection is connected between input terminal and output end, and parallel level air lumen type bulk acoustic wave resonator is then located at two series-connected stage skies Between air-chamber pattern bulk acoustic wave resonator or between series-connected stage air lumen type bulk acoustic wave resonator and input/output terminal.By There are numerous possibilities in the structure of thin-film bulk acoustic wave filter provided by the present invention, it is for brevity, no longer right herein All possible structures of thin-film bulk acoustic wave filter are enumerated.It should be noted that in actual production, first preceding Thin-film bulk acoustic wave filter is formed on air lumen type bulk acoustic resonator structure described in text, wherein each film bulk acoustic filter Wave device includes at least an air lumen type bulk acoustic wave resonator unit, can generally form multiple air chambers in a wafer substrate Then type bulk accoustic wave filter cuts the wafer substrate to obtain multiple thin-film bulk acoustic wave filter.Based on this hair Air lumen type bulk acoustic wave resonator unit in air lumen type bulk acoustic resonator structure provided by bright is formed by thin-film body Acoustic wave filter has the advantages that at low cost, high yield rate under the premise of guaranteeing that work is in range of target frequencies.
It is obvious to a person skilled in the art that invention is not limited to the details of the above exemplary embodiments, Er Qie In the case where without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter From the point of view of which point, the present embodiments are to be considered as illustrative and not restrictive, and the scope of the present invention is by appended power Benefit requires rather than above description limits, it is intended that all by what is fallen within the meaning and scope of the equivalent elements of the claims Variation is included in the present invention.Any reference signs in the claims should not be construed as limiting the involved claims.This Outside, it is clear that one word of " comprising " is not excluded for other component, unit or step, and odd number is not excluded for plural number.It is stated in system claims Multiple components, unit or device can also be implemented through software or hardware by a component, unit or device.
Film bulk acoustic resonator structure provided by the present invention and its manufacturing method pass through control lower electrode layer, piezoelectric layer And the variation tendency of the thickness distribution of upper electrode layer three-layer thin-film, so that the double-layer films in the three-layer thin-film are in wafer substrate On thickness be distributed according to the first variation tendency, thickness of another layer film in wafer substrate according to the first variation tendency phase Anti- the second variation tendency distribution, in this way, which the overall thickness of the three-layer thin-film can be effectively improved in wafer substrate Uniformity, so as to the frequency distribution model of the thin film bulk acoustic wave resonator unit effectively reduced in same wafer substrate Enclose, so can be effectively reduced be subsequently formed thin-film bulk acoustic wave filter needed for frequency times of revision and duration, not only The production cost for advantageously reducing film bulk acoustic resonator structure and thin-film bulk acoustic wave filter, also advantageously improves thin-film body The yield rate of acoustic wave filter.Correspondingly, based on the thin film bulk acoustic wave resonator unit institute shape in structure provided by the present invention At thin-film bulk acoustic wave filter guarantee work in range of target frequencies under the premise of, have it is at low cost, high yield rate Advantage.
Above disclosed be only some preferred embodiments of the invention, cannot limit the present invention's certainly with this Interest field, therefore equivalent changes made in accordance with the claims of the present invention, are still within the scope of the present invention.

Claims (22)

1. a kind of manufacturing method of film bulk acoustic resonator structure, the manufacturing method include:
Wafer substrate is provided；
Bragg reflecting layer is formed in the wafer substrate；
Lower electrode layer, piezoelectric layer and upper electrode layer three-layer thin-film are sequentially formed on the Bragg reflecting layer in the crystalline substance Multiple thin film bulk acoustic wave resonator units are formed on circle substrate, wherein the lower electrode layer, the piezoelectric layer, the top electrode Thickness of the double-layer films in the wafer substrate in layer is distributed according to the first variation tendency, another layer film is in the wafer Thickness on substrate is distributed according to the second variation tendency, wherein first variation tendency is opposite with second variation tendency.
2. the manufacturing method according to claim 1, in which:
First variation tendency be film thickness from the center of the wafer substrate along half radial edges incremented/decremented, institute The thickness that the second variation tendency is film is stated to successively decrease/be incremented by along half radial edges from the center of the wafer substrate；Or
First variation tendency is that the thickness of film is incremented by along the diametrical direction of the wafer substrate, second variation tendency It is that the thickness of film successively decreases along the diametrical direction of the wafer substrate.
3. manufacturing method according to claim 1 or 2, in which:
Before sequentially forming lower electrode layer, piezoelectric layer and upper electrode layer three-layer thin-film on the Bragg reflecting layer, the system Make method further include: establish the thickness model of lower electrode layer, piezoelectric layer and upper electrode layer in wafer substrate respectively, and according to The thickness model and the target overall thickness of preset three-layer thin-film determine the preparation technology parameter of the three-layer thin-film；
It includes: basis that lower electrode layer, piezoelectric layer and upper electrode layer three-layer thin-film are sequentially formed on the Bragg reflecting layer It is thin that the preparation technology parameter sequentially forms lower electrode layer, piezoelectric layer and three layers of upper electrode layer on the Bragg reflecting layer Film.
4. manufacturing method according to claim 1 or 2, wherein the thickness is the acoustic thickness of film.
5. manufacturing method according to claim 4, wherein the expression formula of the acoustic thickness of the film is as follows:
The π of d (t)=2 ft/v
Wherein, f indicates the centre frequency of thin film bulk acoustic wave resonator unit, and t indicates that the physical thickness of film, v indicate sound wave edge The spread speed of thin film physics thickness direction, d (t) indicate acoustic thickness of the film on position of the physical thickness equal to t.
6. a kind of film bulk acoustic resonator structure, which includes wafer substrate and is located at the crystalline substance Multiple laminated construction on circle substrate, multiple laminated construction and the wafer substrate form multiple thin film bulk acoustic wave resonator lists Member, wherein each laminated construction successively includes Bragg reflecting layer, lower electrode layer, piezoelectric layer and top electrode from bottom to up Layer, in which:
The double-layer films in lower electrode layer, piezoelectric layer, upper electrode layer in the multiple thin film bulk acoustic wave resonator unit are in institute State that the thickness in wafer substrate is distributed according to the first variation tendency, thickness of another layer film in the wafer substrate is according to second Variation tendency distribution, wherein the first variation tendency is opposite with the second variation tendency.
7. film bulk acoustic resonator structure according to claim 6, in which:
First variation tendency be film thickness from the center of the wafer substrate along half radial edges incremented/decremented, institute The thickness that the second variation tendency is film is stated to successively decrease/be incremented by along half radial edges from the center of the wafer substrate；Or
First variation tendency is that the thickness of film is incremented by along the diametrical direction of the wafer substrate, second variation tendency It is that the thickness of film successively decreases along the diametrical direction of the wafer substrate.
8. film bulk acoustic resonator structure according to claim 6 or 7, wherein the multiple film bulk acoustic resonator The overall thickness of device unit its lower electrode layer, piezoelectric layer and upper electrode layer is all the same.
9. film bulk acoustic resonator structure according to claim 6 or 7, wherein the thickness is that the acoustics of film is thick Degree.
10. film bulk acoustic resonator structure according to claim 9, wherein the expression of the acoustic thickness of the film Formula is as follows:
The π of d (t)=2 ft/v
Wherein, f indicates the centre frequency of thin film bulk acoustic wave resonator unit, and t indicates that the physical thickness of film, v indicate sound wave edge The spread speed of thin film physics thickness direction, d (t) indicate acoustic thickness of the film on position of the physical thickness equal to t.
11. a kind of thin-film bulk acoustic wave filter, which includes at least one thin film bulk acoustic wave resonator list Member, wherein at least one thin film bulk acoustic wave resonator unit is using film described in any one of described claim 6 to 10 Thin film bulk acoustic wave resonator unit in bulk acoustic resonator structure.
12. a kind of manufacturing method of film bulk acoustic resonator structure, the manufacturing method include:
Wafer substrate is provided；
The wafer substrate is etched to form groove；
The groove is filled using expendable material and the upper surface of the wafer substrate is planarized；
The lower electrode layer, piezoelectric layer and upper electrode layer three for covering the groove are sequentially formed in the upper surface of the wafer substrate Layer film in the wafer substrate to form multiple thin film bulk acoustic wave resonator units, wherein the lower electrode layer, the pressure Thickness of the double-layer films in the wafer substrate in electric layer, the upper electrode layer is distributed according to the first variation tendency, is another Thickness of the layer film in the wafer substrate is distributed according to the second variation tendency, and first variation tendency and described second becomes Change trend is opposite；
It removes the expendable material and forms cavity between the lower electrode layer and the wafer substrate.
13. manufacturing method according to claim 12, in which:
First variation tendency be film thickness from the center of the wafer substrate along half radial edges incremented/decremented, institute The thickness that the second variation tendency is film is stated to successively decrease/be incremented by along half radial edges from the center of the wafer substrate；Or
First variation tendency is that the thickness of film is incremented by along the diametrical direction of the wafer substrate, second variation tendency It is that the thickness of film successively decreases along the diametrical direction of the wafer substrate.
14. manufacturing method according to claim 12 or 13, in which:
The lower electrode layer, piezoelectric layer and upper electrode layer three for covering the groove are sequentially formed in the upper surface of the wafer substrate Before layer film, the manufacturing method further include: establish lower electrode layer, piezoelectric layer and upper electrode layer respectively in wafer substrate Thickness model, and determine according to the target overall thickness of the thickness model and preset three-layer thin-film the system of the three-layer thin-film Standby technological parameter；
The lower electrode layer, piezoelectric layer and upper electrode layer three for covering the groove are sequentially formed in the upper surface of the wafer substrate Layer film includes: to be sequentially formed under the covering groove according to the preparation technology parameter in the upper surface of the wafer substrate Electrode layer, piezoelectric layer and upper electrode layer three-layer thin-film.
15. manufacturing method according to claim 12 or 13, wherein the thickness is the acoustic thickness of film.
16. the manufacturing method according to claim 15, wherein the expression formula of the acoustic thickness of the film is as follows:
The π of d (t)=2 ft/v
Wherein, f indicates the centre frequency of thin film bulk acoustic wave resonator unit, and t indicates that the physical thickness of film, v indicate sound wave edge The spread speed of thin film physics thickness direction, d (t) indicate the acoustic thickness of film film on position of the physical thickness equal to t.
17. a kind of film bulk acoustic resonator structure, which includes wafer substrate and is located at this Multiple laminated construction in wafer substrate, multiple laminated construction and the wafer substrate form multiple thin film bulk acoustic wave resonator Unit, wherein each laminated construction successively includes lower electrode layer, piezoelectric layer and upper electrode layer, each lamination from bottom to up Cavity is respectively formed between lower electrode layer and the wafer substrate in structure, it is characterised in that:
The double-layer films in lower electrode layer, piezoelectric layer, upper electrode layer in the multiple thin film bulk acoustic wave resonator unit are in institute State that the thickness in wafer substrate is distributed according to the first variation tendency, thickness of another layer film in the wafer substrate is according to second Variation tendency distribution, wherein the first variation tendency is opposite with the second variation tendency.
18. film bulk acoustic resonator structure according to claim 17, it is characterised in that:
First variation tendency be film thickness from the center of the wafer substrate along half radial edges incremented/decremented, institute The thickness that the second variation tendency is film is stated to successively decrease/be incremented by along half radial edges from the center of the wafer substrate；Or
First variation tendency is that the thickness of film is incremented by along the diametrical direction of the wafer substrate, second variation tendency It is that the thickness of film successively decreases along the diametrical direction of the wafer substrate.
19. film bulk acoustic resonator structure described in 7 or 18 according to claim 1, which is characterized in that the multiple thin-film body The overall thickness of acoustic resonator unit its lower electrode layer, piezoelectric layer and upper electrode layer is all the same.
20. film bulk acoustic resonator structure described in 7 or 18 according to claim 1, which is characterized in that the thickness is film Acoustic thickness.
21. film bulk acoustic resonator structure according to claim 20, which is characterized in that the acoustic thickness of the film Expression formula it is as follows:
The π of d (t)=2 ft/v
Wherein, f indicates the centre frequency of thin film bulk acoustic wave resonator unit, and t indicates that the physical thickness of film, v indicate sound wave edge The spread speed of thin film physics thickness direction, d (t) indicate acoustic thickness of the film on position of the physical thickness equal to t.
22. a kind of thin-film bulk acoustic wave filter, which includes at least one thin film bulk acoustic wave resonator list Member, wherein at least one thin film bulk acoustic wave resonator unit is using thin described in any one of described claim 17 to 21 Thin film bulk acoustic wave resonator unit in film bulk acoustic resonator structure.
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