CN104917484A - Acoustic wave resonator - Google Patents
Acoustic wave resonator Download PDFInfo
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- CN104917484A CN104917484A CN201510282143.0A CN201510282143A CN104917484A CN 104917484 A CN104917484 A CN 104917484A CN 201510282143 A CN201510282143 A CN 201510282143A CN 104917484 A CN104917484 A CN 104917484A
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- 239000000758 substrate Substances 0.000 claims abstract description 43
- 239000011148 porous material Substances 0.000 claims abstract description 38
- 239000000463 material Substances 0.000 claims description 52
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 48
- 229910021426 porous silicon Inorganic materials 0.000 claims description 20
- 239000000377 silicon dioxide Substances 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 239000010453 quartz Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 238000005516 engineering process Methods 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- 239000010931 gold Substances 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 238000010295 mobile communication Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
Landscapes
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention provides an acoustic wave resonator which comprises a substrate, a sound reflecting layer, a lower electrode layer, a piezoelectric layer and an upper electrode layer, wherein the sound reflecting layer, made of a porous material, is formed at the surface of the substrate or on the substrate; the lower electrode layer is formed on the sound reflecting layer; the piezoelectric layer is formed on the lower electrode layer; and the upper electrode layer is formed on the piezoelectric layer. The sound reflecting layer made of the porous material is used, so that the acoustic wave resonator has high performance, the manufacture technology of the acoustic wave resonator is effectively improved, the structure of the acoustic wave resonator is simplified, the manufacture cost of the acoustic wave resonator is reduced, and the yield rate of the acoustic wave resonators is greatly improved.
Description
Technical field
The present invention relates to MEMS and manufacture field, particularly relate to a kind of acoustic resonator.
Background technology
The fast development of wireless communication technique facilitates the development of mobile communication product high frequency.At present, needed for the mobile terminal products such as smart mobile phone, the frequency range many places of radio-frequency filter are between 0.5GHz ~ 10GHz, and the operating frequency of this radio frequency filter is had higher requirement.And the key of radio-frequency filter is the performance of resonator.In existing resonator, thin film bulk acoustic resonator (FBAR, FilmBulkAcoustic Resonator) owing to having high q-factor, operating frequency is high, power capacity is large, volume is little, anti-interference is good, be easy to the advantage such as integrated, becomes 3G, 4G even optimal selection of 5G mobile communication.
Thin film bulk acoustic resonator is primarily of substrate, acoustic reflecting layer, lower electrode layer, piezoelectric layer and upper electrode layer composition, and the thin film bulk acoustic resonator of main flow in prior art can be divided into following three types by the difference according to acoustic reflecting layer: silicon reverse side etching type (please refer to Fig. 1), air-gap type (please refer to Fig. 2) and solid-state assembly type (please refer to Fig. 3).Wherein, silicon reverse side etching type adopts MEMS (micro electro mechanical system) (MEMS, Micro-Electro-Mechanical System) technology removes most of base material from silicon base 10 reverse side etching, and the disadvantage of this structure is that the bad mechanical strength of device and device yield are low.Air-gap type adopts MEMS technology, the method finally removed again by first filling sacrificial layer material forms an air-gap 25 in substrate 20, although the mechanical strength of the structure device formed by the method is obtained and greatly improves, but processing step is too complicated, and the precise requirements to remove sacrificial layer material is high, technology difficulty is large.Solid-state assembly type adopts Bragg reflection principles, as Bragg reflecting layer 31, sound wave is limited in piezoelectric vibration material by manufacturing the high low-impedance acoustic layer of multilayer, when forming this structure because needs prepare plural layers as Bragg reflecting layer 31, the highest compared to first two structural manufacturing process cost, and the material parameter of each layer film and membrane stress control complicated, difficulty is large.
Summary of the invention
In order to overcome above-mentioned defect of the prior art, the invention provides a kind of acoustic resonator, this acoustic resonator comprises:
Substrate;
Acoustic reflecting layer, this acoustic reflecting layer is formed at the surface of described substrate or is positioned in described substrate, and the material of this acoustic reflecting layer is porous material;
Lower electrode layer, this lower electrode layer is positioned on described acoustic reflecting layer;
Piezoelectric layer, this piezoelectric layer is positioned on described lower electrode layer;
Upper electrode layer, this upper electrode layer is positioned on described piezoelectric layer.
According to an aspect of the present invention, in this acoustic resonator, described porous material is porous silicon or porous silica.
According to another aspect of the present invention, in this acoustic resonator, the thickness range of described acoustic reflecting layer is 10nm to 1000 μm.
According to a further aspect of the invention, in this acoustic resonator, the scope of the porosity of described porous material is 10% to 90%.
According to a further aspect of the invention, in this acoustic resonator, the material of described substrate comprises one in silicon, silica, quartz, porous silicon, porous silica or its combination in any.
Compared with prior art, acoustic resonator provided by the invention has the following advantages: by adopting porous material as acoustic reflecting layer, can ensure that acoustic reflecting layer has good acoustic reflection effect on the one hand, such as silicon reverse side etching in prior art can be saved on the other hand, fill sacrifice layer remove again and Bragg reflecting layer the complexity such as to prepare high, the step that operation easier is large, thus ensureing the manufacturing process effectively improving acoustic resonator while acoustic resonator has superperformance, simplify the structure of acoustic resonator, reduce the manufacturing cost of acoustic resonator and greatly increase the rate of finished products of acoustic resonator.
Accompanying drawing explanation
By reading the detailed description done non-limiting example done with reference to the following drawings, other features, objects and advantages of the present invention will become more obvious:
Fig. 1 is the structural representation of silicon reverse side etching type thin film bulk acoustic resonator in prior art;
Fig. 2 is the structural representation of prior art hollow air-gap type thin film bulk acoustic resonator;
Fig. 3 is the structural representation of solid-state assembly type thin film bulk acoustic resonator in prior art;
Fig. 4 is the structural representation of the acoustic resonator according to the present invention's specific embodiment;
Fig. 5 is the structural representation of the acoustic resonator according to another specific embodiment of the present invention;
Fig. 6 is the structural representation of porous silicon in the acoustic reflecting layer according to the present invention's specific embodiment;
Fig. 7 is the stereoscan photograph of porous silicon in the acoustic reflecting layer according to the present invention's specific embodiment.
In accompanying drawing, same or analogous Reference numeral represents same or analogous parts.
Embodiment
For a better understanding and interpretation of the present invention, below in conjunction with accompanying drawing, the present invention is described in further detail.
The invention provides a kind of acoustic resonator, please refer to Fig. 4, Fig. 4 is the structural representation of the acoustic resonator according to the present invention's specific embodiment.As shown in the figure, this acoustic resonator comprises:
Substrate 100;
Acoustic reflecting layer 110, this acoustic reflecting layer 110 is formed at the surface of described substrate 100, and the material of this acoustic reflecting layer 110 is porous materials;
Lower electrode layer 120, this lower electrode layer 120 is positioned on described acoustic reflecting layer 110;
Piezoelectric layer 130, this piezoelectric layer 130 is positioned on described lower electrode layer 120;
Upper electrode layer 140, this upper electrode layer 140 is positioned on described piezoelectric layer 130.
Below, the various piece of above-mentioned acoustic resonator is described in detail.
Particularly, in one embodiment, the material of substrate 100 can be silicon, silica, quartz etc.In another embodiment, the material of substrate 100 can also be porous material, such as porous silicon, porous silica etc.Because the cost of the porous material such as porous silicon, porous silica is usually above non-porous base material such as silicon, silica, quartz, therefore consider from the angle of cost, the material of substrate 100 is preferably the non-porous base material such as silicon, silica, quartz.It will be understood by those skilled in the art that; the material of substrate 100 is not restricted to above-mentioned citing; other every materials for the formation of making this substrate can have supporting role after substrate include in the scope that the present invention protects, and for brevity, will not enumerate at this.Typically, the thickness range of substrate 100 is 50 μm to 2000 μm.
Acoustic reflecting layer 110 is formed at the surface of substrate 100, and wherein, the material of this acoustic reflecting layer 110 is porous materials.In the present embodiment, porous material is porous silicon or porous silica.It will be appreciated by persons skilled in the art that porous material is not restricted to above-mentioned porous silicon and porous silica, other every porous materials that can play good acoustic reflection effect include in the scope that the present invention protects.The scope of the porosity of porous material is preferably between 10% to 90%, and wherein, the concrete value of the porosity of porous material needs to determine according to the actual design demand of acoustic resonator.The thickness range of acoustic reflecting layer 110 is preferably 10nm to 1000 μm.It should be noted that, the material being directed to substrate 100 is the situation of porous material, the material of acoustic reflecting layer 110 and the material of substrate 100 can be the same porous materials with same holes porosity, also can be the same porous material with different aperture degree, can also be complete different types of porous material.In a specific embodiment, acoustic reflecting layer 110 is by carrying out dry etching to the surface of substrate 100 or wet etching is formed.Be that silicon is described for the material of substrate 100, the silicon on substrate 100 surface generates porous silicon under the effect of dry etching or wet etching, and wherein, the region forming porous silicon is acoustic reflecting layer 110.Please refer to Fig. 6, Fig. 6 is the structural representation of porous silicon in the acoustic reflecting layer according to the present invention's specific embodiment, and as shown in the figure, the part indicating Si in this structure is substrate 100, and the part indicating PS is porous silicon, namely acoustic reflecting layer 110.Please refer to Fig. 7, Fig. 7 is the stereoscan photograph of porous silicon in the acoustic reflecting layer according to the present invention's specific embodiment, wherein, be can clearly be seen that the real structure of the porous silicon forming acoustic reflecting layer 110 by Fig. 7.It should be noted that, utilize dry etching or wet etching formed porous material be those skilled in the art the technological means be familiar with, for brevity, do not repeat them here.
Lower electrode layer 120 is positioned on acoustic reflecting layer 110.The material of lower electrode layer 120 has conductivity, wherein, the material of lower electrode layer 120 includes but not limited to molybdenum (Mo), tungsten (W), aluminium (Al), platinum (Pt), gold (Au), one in titanium (Ti) or its combination in any.Typically, the thickness range of lower electrode layer 120 is 10nm to 1000nm.
Piezoelectric layer 130 is positioned on lower electrode layer 120.The material of piezoelectric layer 130 includes but not limited to one in aluminium nitride (AlN), zinc oxide (ZnO), lead zirconate titanate (PZT) or its combination in any.Typically, the thickness range of piezoelectric layer 130 is 20nm to 2000nm.
Upper electrode layer 140 is positioned on piezoelectric layer 130.The material of upper electrode layer 140 has conductivity, wherein, the material of upper electrode layer 140 includes but not limited to molybdenum (Mo), tungsten (W), aluminium (Al), platinum (Pt), gold (Au), one in titanium (Ti) or its combination in any.In one embodiment, the material of upper electrode layer 140 is identical with the material of lower electrode layer 120.In other embodiments, the material of upper electrode layer 140 also can be different with the material of lower electrode layer 120.Typically, the thickness range of upper electrode layer 140 is 10nm to 1000nm.
Present invention also offers a kind of acoustic resonator, please refer to Fig. 5, Fig. 5 is the structural representation of the acoustic resonator according to another specific embodiment of the present invention.As shown in the figure, this acoustic resonator comprises:
Substrate 100;
Acoustic reflecting layer 150, this acoustic reflecting layer 150 is positioned in described substrate 100, and the material of this acoustic reflecting layer 150 is porous materials;
Lower electrode layer 120, this lower electrode layer 120 is positioned on described acoustic reflecting layer 110;
Piezoelectric layer 130, this piezoelectric layer 130 is positioned on described lower electrode layer 120;
Upper electrode layer 140, this upper electrode layer 140 is positioned on described piezoelectric layer 130.
Below, the various piece of above-mentioned acoustic resonator is described in detail.
Particularly, in one embodiment, the material of substrate 100 can be silicon, silica, quartz etc.In another embodiment, the material of substrate 100 can also be porous material, such as porous silicon, porous silica etc.Because the cost of the porous material such as porous silicon, porous silica is usually above non-porous base material such as silicon, silica, quartz, therefore consider from the angle of cost, the material of substrate 100 is preferably the non-porous base material such as silicon, silica, quartz.It will be understood by those skilled in the art that; the material of substrate 100 is not restricted to above-mentioned citing; other every materials for the formation of making this substrate can have supporting role after substrate include in the scope that the present invention protects, and for brevity, will not enumerate at this.Typically, the thickness range of substrate 100 is 50 μm to 2000 μm.
Acoustic reflecting layer 150 is positioned in substrate 100, and wherein, the material of this acoustic reflecting layer 150 is porous materials.In the present embodiment, porous material is porous silicon or porous silica.It will be appreciated by persons skilled in the art that porous material is not restricted to above-mentioned porous silicon and porous silica, other every porous materials that can play good acoustic reflection effect include in the scope that the present invention protects.The scope of the porosity of porous material is preferably between 10% to 90%, and wherein, the concrete value of the porosity of porous material needs to determine according to the actual design demand of acoustic resonator.The thickness range of acoustic reflecting layer 150 is preferably 10nm to 1000 μm.It should be noted that, the material being directed to substrate 100 is the situation of porous material, the material of acoustic reflecting layer 150 and the material of substrate 100 can be the same porous materials with same holes porosity, also can be the same porous material with different aperture degree, can also be complete different types of porous material.In a specific embodiment, acoustic reflecting layer 150 is formed by epitaxially grown mode on the surface of substrate 100.It should be noted that, utilize epitaxially grown mode formed in substrate 100 porous material be those skilled in the art the technological means be familiar with, for brevity, do not repeat them here.
Lower electrode layer 120 is positioned on acoustic reflecting layer 150.The material of lower electrode layer 120 has conductivity, wherein, the material of lower electrode layer 120 includes but not limited to molybdenum (Mo), tungsten (W), aluminium (Al), platinum (Pt), gold (Au), one in titanium (Ti) or its combination in any.Typically, the thickness range of lower electrode layer 120 is 10nm to 1000nm.
Piezoelectric layer 130 is positioned on lower electrode layer 120.The material of piezoelectric layer 130 includes but not limited to one in aluminium nitride (AlN), zinc oxide (ZnO), lead zirconate titanate (PZT) or its combination in any.Typically, the thickness range of piezoelectric layer 130 is 20nm to 2000nm.
Upper electrode layer 140 is positioned on piezoelectric layer 130.The material of upper electrode layer 140 has conductivity, wherein, the material of upper electrode layer 140 includes but not limited to molybdenum (Mo), tungsten (W), aluminium (Al), platinum (Pt), gold (Au), one in titanium (Ti) or its combination in any.In one embodiment, the material of upper electrode layer 140 is identical with the material of lower electrode layer 120.In other embodiments, the material of upper electrode layer 140 also can be different with the material of lower electrode layer 120.Typically, the thickness range of upper electrode layer 140 is 10nm to 1000nm.
To those skilled in the art, obviously the invention is not restricted to the details of above-mentioned one exemplary embodiment, and when not deviating from spirit of the present invention or essential characteristic, the present invention can be realized in other specific forms.Therefore, no matter from which point, all should embodiment be regarded as exemplary, and be nonrestrictive, scope of the present invention is limited by claims instead of above-mentioned explanation, and all changes be therefore intended in the implication of the equivalency by dropping on claim and scope are included in the present invention.Any Reference numeral in claim should be considered as the claim involved by limiting.In addition, obviously " comprising " one word do not get rid of miscellaneous part, unit or step, odd number does not get rid of plural number.Multiple parts, unit or the device of stating in system claims also can be realized by software or hardware by parts, unit or a device.
Compared with prior art, acoustic resonator provided by the invention has the following advantages: by adopting porous material as acoustic reflecting layer, can ensure that acoustic reflecting layer has good acoustic reflection effect on the one hand, such as silicon reverse side etching in prior art can be saved on the other hand, fill sacrifice layer remove again and Bragg reflecting layer the complexity such as to prepare high, the step that operation easier is large, thus ensureing the manufacturing process effectively improving acoustic resonator while acoustic resonator has superperformance, simplify the structure of acoustic resonator, reduce the manufacturing cost of acoustic resonator and greatly increase the rate of finished products of acoustic resonator.
Above disclosedly be only preferred embodiments more of the present invention, certainly can not limit the interest field of the present invention with this, therefore according to the equivalent variations that the claims in the present invention are done, still belong to the scope that the present invention is contained.
Claims (5)
1. an acoustic resonator, this acoustic resonator comprises:
Substrate;
Acoustic reflecting layer, this acoustic reflecting layer is formed at the surface of described substrate or is positioned in described substrate, and the material of this acoustic reflecting layer is porous material;
Lower electrode layer, this lower electrode layer is positioned on described acoustic reflecting layer;
Piezoelectric layer, this piezoelectric layer is positioned on described lower electrode layer;
Upper electrode layer, this upper electrode layer is positioned on described piezoelectric layer.
2. acoustic resonator according to claim 1, wherein:
Described porous material is porous silicon or porous silica.
3. acoustic resonator according to claim 1, wherein:
The thickness range of described acoustic reflecting layer is 10nm to 1000 μm.
4. acoustic resonator according to any one of claim 1 to 3, wherein:
The scope of the porosity of described porous material is 10% to 90%.
5. acoustic resonator according to claim 1, wherein:
The material of described substrate comprises one in silicon, silica, quartz, porous silicon, porous silica or its combination in any.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510282143.0A CN104917484A (en) | 2015-05-28 | 2015-05-28 | Acoustic wave resonator |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510282143.0A CN104917484A (en) | 2015-05-28 | 2015-05-28 | Acoustic wave resonator |
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| CN104917484A true CN104917484A (en) | 2015-09-16 |
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| CN201510282143.0A Pending CN104917484A (en) | 2015-05-28 | 2015-05-28 | Acoustic wave resonator |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109474253A (en) * | 2018-09-30 | 2019-03-15 | 天津大学 | A kind of flexible substrates thin film bulk acoustic wave resonator and forming method |
| CN110445474A (en) * | 2018-05-04 | 2019-11-12 | 贵州中科汉天下微电子有限公司 | Thin film bulk acoustic wave resonator and its manufacturing method and thin-film bulk acoustic wave filter |
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| JP2006120785A (en) * | 2004-10-20 | 2006-05-11 | Canon Inc | Manufacturing method of semiconductor layer and substrate |
| CN102650616A (en) * | 2012-02-13 | 2012-08-29 | 湖北大学 | Gold nano porous sensitive film body type acoustic biosensor |
| CN103166596A (en) * | 2013-04-11 | 2013-06-19 | 天津大学 | Resonator and filter |
| CN204810241U (en) * | 2015-05-28 | 2015-11-25 | 贵州中科汉天下电子有限公司 | Sound wave resonator and method for its operation when temperature changes to maintain harmonic vibration |
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2015
- 2015-05-28 CN CN201510282143.0A patent/CN104917484A/en active Pending
Patent Citations (6)
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| CN1383610A (en) * | 2000-04-06 | 2002-12-04 | 皇家菲利浦电子有限公司 | Tunable filter arrangement comprising resonator |
| JP2005057707A (en) * | 2003-08-07 | 2005-03-03 | Sony Corp | Thin film bulk acoustic resonator and micro electromechanical system device |
| JP2006120785A (en) * | 2004-10-20 | 2006-05-11 | Canon Inc | Manufacturing method of semiconductor layer and substrate |
| CN102650616A (en) * | 2012-02-13 | 2012-08-29 | 湖北大学 | Gold nano porous sensitive film body type acoustic biosensor |
| CN103166596A (en) * | 2013-04-11 | 2013-06-19 | 天津大学 | Resonator and filter |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110445474A (en) * | 2018-05-04 | 2019-11-12 | 贵州中科汉天下微电子有限公司 | Thin film bulk acoustic wave resonator and its manufacturing method and thin-film bulk acoustic wave filter |
| CN109474253A (en) * | 2018-09-30 | 2019-03-15 | 天津大学 | A kind of flexible substrates thin film bulk acoustic wave resonator and forming method |
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