CN208143193U - Film bulk acoustic resonator structure and thin-film bulk acoustic wave filter - Google Patents
Film bulk acoustic resonator structure and thin-film bulk acoustic wave filter Download PDFInfo
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- CN208143193U CN208143193U CN201820654231.8U CN201820654231U CN208143193U CN 208143193 U CN208143193 U CN 208143193U CN 201820654231 U CN201820654231 U CN 201820654231U CN 208143193 U CN208143193 U CN 208143193U
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Abstract
The utility model provides a kind of film bulk acoustic resonator structure, the film bulk acoustic resonator structure includes wafer substrate and multiple laminated construction in the wafer substrate, multiple laminated construction and the wafer substrate form multiple thin film bulk acoustic wave resonator units, each laminated construction successively includes Bragg reflecting layer from bottom to up, lower electrode layer, piezoelectric layer and upper electrode layer, wherein, lower electrode layer in the multiple thin film bulk acoustic wave resonator unit, piezoelectric layer, thickness of the double-layer films in the wafer substrate in upper electrode layer is distributed according to the first variation tendency, thickness of another layer film in the wafer substrate is distributed according to the second variation tendency, wherein, first variation tendency is opposite with the second variation tendency.Thin film bulk acoustic wave resonator unit its frequency distribution on film bulk acoustic resonator structure provided by the utility model is uniform.Correspondingly, the utility model additionally provides a kind of thin-film bulk acoustic wave filter.
Description
Technical field
The utility model relates to field of manufacturing semiconductor devices more particularly to a kind of film bulk acoustic resonator structure and
Thin-film bulk acoustic wave filter.
Background technique
From analog radio frequency mechanics of communication at the beginning of 90 generation of last century by since developing, RF front-end module has been increasingly becoming logical
Interrogate the core component of equipment.In all RF front-end modules, filter has become that growth is most violent, development prospect is maximum
Component.With the high speed development of wireless communication technique, 5G communications protocol is increasingly mature, various aspects of the market to radio-frequency filter
More stringent standard can be also proposed.The performance of filter is determined by the resonator element for forming filter.In existing filter
In wave device, thin film bulk acoustic wave resonator (FBAR) is because its is small in size, insertion loss is low, Out-of-band rejection is big, quality factor are high, work
The features such as frequency is high, power capacity is big and antistatic impact capacity is good becomes one of the filter of most suitable 5G application.
Thin film bulk acoustic wave resonator can be divided into two types according to lower surface reflecting layer difference：Air lumen type bulk acoustic resonance
Device and Bragg reflection stratotype bulk acoustic wave resonator.Air lumen type bulk acoustic wave resonator successively includes substrate, lower electricity from bottom to up
Pole layer, piezoelectric layer and upper electrode layer, form the cavity for being used for reflected acoustic wave energy between lower electrode layer and substrate.Prague
Reflection stratotype bulk acoustic wave resonator successively includes substrate, Bragg reflecting layer, lower electrode layer, piezoelectric layer and powers on from bottom to up
Pole layer.Wherein, total acoustic thickness of lower electrode layer, piezoelectric layer and upper electrode layer three-layer thin-film determines above two bulk acoustic wave
The frequency of resonator.Specifically, total acoustic thickness of upper electrode layer, piezoelectric layer and lower electrode layer three-layer thin-film is thicker, on
The frequency for stating two kinds of bulk acoustic wave resonators is lower.
Due to the limitation of prior art itself, cause prepare lower electrode layer, piezoelectric layer and upper electrode layer this three
Acoustic thickness distribution of every layer film in wafer substrate can show inhomogeneities during layer film.Wherein, film
The exemplary distribution mode of acoustic thickness includes：(1) acoustic thickness of film is from the center of wafer substrate along half radial wafer substrate
Edge be incremented by；(2) acoustic thickness of film successively decreases from the center of wafer substrate along the edge of half radial wafer substrate；(3) thin
The acoustic thickness of film is incremented by along the diametrical direction of wafer substrate.In addition, in the prior art, lower electrode layer, piezoelectric layer and on
The distribution variation tendency usually having the same of its acoustic thickness of this three-layer thin-film of electrode layer, that is to say, that lower electrode layer, piezoelectricity
Layer and upper electrode layer its acoustic thickness are to be incremented by from the center of wafer substrate along the edge of half radial wafer substrate or be
It successively decreases from the center of wafer substrate along the edge of half radial wafer substrate, or is passed along the diametrical direction of wafer substrate
Increase.Due to inhomogeneities of the film in wafer substrate with acoustic thickness, acoustics of every layer film in wafer substrate in addition
Thickness distribution and variation tendency having the same, therefore lead to the thin film bulk acoustic wave resonator on the different location of wafer substrate
Lower electrode layer, total acoustic thickness of piezoelectric layer and upper electrode layer three-layer thin-film it is inconsistent, so as to cause wafer substrate not
Frequency with the thin film bulk acoustic wave resonator on position is inconsistent, is distributed in a wider range.With air lumen type body sound
It is illustrated for wave resonator.Fig. 1 (a) is please referred to, Fig. 1 (a) is to form multiple air in wafer substrate in the prior art
Diagrammatic cross-section of the structure along wafer substrate diameter after lumen type bulk acoustic wave resonator.As shown, air lumen type bulk acoustic wave is humorous
The device that shakes successively includes wafer substrate 10, lower electrode layer 11, piezoelectric layer 12 and upper electrode layer 13,11 He of lower electrode layer from bottom to up
Cavity 14 is formed between wafer substrate 10.Wherein, the acoustic thickness distribution of lower electrode layer 11, piezoelectric layer 12 and upper electrode layer 13
It is to be incremented by from the center of wafer substrate 10 along the edge of half radial wafer substrate 10.In this way, lower electrode layer 11, piezoelectric layer
12 and total acoustic thickness of 13 three-layer thin-film of upper electrode layer be also from the center of wafer substrate 10 along half radial wafer substrate 10
Edge be incremented by.In this case, positioned at 10 central area of wafer substrate and positioned at the air chamber of 10 fringe region of wafer substrate
Type bulk acoustic wave resonator (will be located at the air lumen type bulk acoustic wave resonator circle of central area and fringe region using dotted line in figure
It compares out), there are larger differences between total acoustic thickness of 13 three-layer thin-film of lower electrode layer 11, piezoelectric layer 12 and upper electrode layer
It is different, so as to cause the air lumen type bulk acoustic wave resonator in different zones in same wafer substrate 10 frequency distribution one compared with
In a wide range of.It should be noted that structure as shown in the figure is diametrically arranged in wafer substrate, there are six air lumen type bulk acoustic wave is humorous
The device that shakes is only schematic example.Similarly, Fig. 1 (b) and Fig. 1 (c) is also to form multiple skies in wafer substrate in the prior art
Diagrammatic cross-section of the structure along wafer substrate diameter after air-chamber pattern bulk acoustic wave resonator.Unlike Fig. 1 (a), Fig. 1 (b)
The acoustic thickness distribution of the lower electrode layer 11 of hollow air-chamber pattern bulk acoustic wave resonator, piezoelectric layer 12 and upper electrode layer 13 be from
The center of wafer substrate 10 is successively decreased along the edge of half radial wafer substrate 10, in this way, lower electrode layer 11, piezoelectric layer 12 and
Total acoustic thickness of 13 three-layer thin-film of upper electrode layer is also from the center of wafer substrate 10 along the edge of half radial wafer substrate 10
Successively decrease.In this case, positioned at 10 central area of wafer substrate and positioned at the air lumen type body sound of 10 fringe region of wafer substrate
Wave resonator (being located at central area using dotted line in figure to iris out with the air lumen type bulk acoustic wave resonator of fringe region) is compared,
There are larger differences between total acoustic thickness of 13 three-layer thin-film of lower electrode layer 11, piezoelectric layer 12 and upper electrode layer, to lead
Cause the frequency distribution of the air lumen type bulk acoustic wave resonator in same wafer substrate 10 in different zones in a larger range.
The acoustic thickness distribution of the lower electrode layer 11, piezoelectric layer 12 and upper electrode layer 13 of the hollow air-chamber pattern bulk acoustic wave resonator of Fig. 1 (c)
It is to be incremented by along the direction of diameter where section, in this way, which lower electrode layer 11, piezoelectric layer 12 and 13 3 layers of upper electrode layer are thin
Total acoustic thickness of film is also to be incremented by along the direction of diameter where section.In this case, it is located at the diameter in wafer substrate 10
The air lumen type bulk acoustic wave resonator of two end regions (will be located at the air lumen type of central area and fringe region using dotted line in figure
Bulk acoustic wave resonator is irised out) compare, total acoustic thickness of 13 three-layer thin-film of lower electrode layer 11, piezoelectric layer 12 and upper electrode layer it
Between there are larger differences, so as to cause the frequency of the air lumen type bulk acoustic wave resonator in different zones in same wafer substrate 10
It is distributed in a larger range.Since the frequency distribution of the thin film bulk acoustic wave resonator in same wafer substrate is relatively wide at one
In the range of, therefore cause finally to be formed by film bulk acoustic filtering based on the thin film bulk acoustic wave resonator in wafer substrate
The working frequency of device is also distributed about in a wider range.
In order to guarantee the performance of thin-film bulk acoustic wave filter, need that thin-film bulk acoustic wave filter is made to be worked as far as possible at one
It is not distributed across in a wider range in relatively narrow range of target frequencies.Currently, the most common mode is to pass through benefit
The working frequency of thin-film bulk acoustic wave filter is corrected with exposure mask revised law or focused ion beam revised law.Wherein, exposure mask is corrected
Method is using mask plate after forming thin-film bulk acoustic wave filter to the film in range of target frequencies that works in wafer substrate
Bulk accoustic wave filter is blocked, and then would operate in the thin-film bulk acoustic wave filter region lower than range of target frequencies
The upper electrode layer of thin film bulk acoustic wave resonator remove certain acoustic thickness, make the working frequency liter of thin-film bulk acoustic wave filter
In height to range of target frequencies.Focused ion beam amendment rule is the hot spot for being 0.1mm-10mm by ion beam focusing to radius,
By adjusting ion beam energy or the mode of scanning speed, the thin film bulk acoustic wave resonator that will be specified in wafer substrate in region
Upper electrode layer remove certain acoustic thickness, so that the working frequency of thin-film bulk acoustic wave filter is increased to range of target frequencies
It is interior.Although above two mode can correct the working frequency of thin-film bulk acoustic wave filter, due to the limitation of prior art,
If thin-film bulk acoustic wave filter working frequency is distributed in a larger range in wafer substrate, it is modified to will lead to frequency
It takes a long time, to need to increase the thickness of test PAD, and then leads to the increase of product cost.In addition, if thin in wafer substrate
Membrane body acoustic wave filter working frequency is distributed in a larger range, then need repeatedly correct repeatedly can just make it is as more as possible
The working frequency of thin-film bulk acoustic wave filter reach in range of target frequencies, and repeatedly correct repeatedly, be easy to cause thin-film body
The yield rate of acoustic wave filter is impaired.
Utility model content
In order to overcome the above-mentioned defects in the prior art, the utility model provides a kind of thin film bulk acoustic wave resonator knot
Structure, the film bulk acoustic resonator structure include wafer substrate and multiple laminated construction in the wafer substrate, this is more
A laminated construction and the wafer substrate form multiple thin film bulk acoustic wave resonator units, each laminated construction from bottom to up according to
It is secondary include Bragg reflecting layer, lower electrode layer, piezoelectric layer and upper electrode layer, wherein：
The double-layer films in lower electrode layer, piezoelectric layer, upper electrode layer in the multiple thin film bulk acoustic wave resonator unit
Be distributed according to the first variation tendency in the thickness in the wafer substrate, thickness of another layer film in the wafer substrate according to
Second variation tendency distribution, wherein the first variation tendency is opposite with the second variation tendency.
One aspect according to the present utility model, in the film bulk acoustic resonator structure, first variation tendency is
For the thickness of film from the center of the wafer substrate along half radial edges incremented/decremented, second variation tendency is film
Thickness successively decreases/is incremented by along half radial edges from the center of the wafer substrate；Or first variation tendency is the thickness of film
Diametrical direction along the wafer substrate is incremented by, and second variation tendency is diameter of the thickness along the wafer substrate of film
Successively decrease in direction.
Other side according to the present utility model, in the film bulk acoustic resonator structure, the multiple thin-film body sound
The overall thickness of wave resonator unit its lower electrode layer, piezoelectric layer and upper electrode layer is all the same.
Another aspect according to the present utility model, in the film bulk acoustic resonator structure, the thickness is film
Acoustic thickness.
Another aspect according to the present utility model, in the film bulk acoustic resonator structure, the acoustics of the film is thick
The expression formula of degree is as follows：The π of d (t)=2 ft/v, wherein f indicates the centre frequency of thin film bulk acoustic wave resonator unit, and t indicates thin
The physical thickness of film, v indicate sound wave along the spread speed of thin film physics thickness direction, and d (t) indicates that film is equal in physical thickness
Acoustic thickness on the position of t.
The utility model additionally provides a kind of thin-film bulk acoustic wave filter, which includes at least one
Thin film bulk acoustic wave resonator unit, wherein at least one thin film bulk acoustic wave resonator unit is humorous using above-mentioned film bulk acoustic
Thin film bulk acoustic wave resonator unit in device structure of shaking.
The utility model provides a kind of film bulk acoustic resonator structure, which includes crystalline substance
Circle substrate and multiple laminated construction in the wafer substrate, multiple laminated construction form multiple with the wafer substrate
Thin film bulk acoustic wave resonator unit, each laminated construction successively include lower electrode layer, piezoelectric layer and top electrode from bottom to up
Layer, it is respectively formed cavity between the lower electrode layer and the wafer substrate in each laminated construction, wherein：
The double-layer films in lower electrode layer, piezoelectric layer, upper electrode layer in the multiple thin film bulk acoustic wave resonator unit
Be distributed according to the first variation tendency in the thickness in the wafer substrate, thickness of another layer film in the wafer substrate according to
Second variation tendency distribution, wherein the first variation tendency is opposite with the second variation tendency.
One aspect according to the present utility model, in the film bulk acoustic resonator structure, first variation tendency is
For the thickness of film from the center of the wafer substrate along half radial edges incremented/decremented, second variation tendency is film
Thickness successively decreases/is incremented by along half radial edges from the center of the wafer substrate；Or first variation tendency is the thickness of film
Diametrical direction along the wafer substrate is incremented by, and second variation tendency is diameter of the thickness along the wafer substrate of film
Successively decrease in direction.
Other side according to the present utility model, in the film bulk acoustic resonator structure, the multiple thin-film body sound
The overall thickness of wave resonator unit its lower electrode layer, piezoelectric layer and upper electrode layer is all the same.
Another aspect according to the present utility model, in the film bulk acoustic resonator structure, the thickness is film
Acoustic thickness.
Another aspect according to the present utility model, in the film bulk acoustic resonator structure, the acoustics of the film is thick
The expression formula of degree is as follows：The π of d (t)=2 ft/v, wherein f indicates the centre frequency of thin film bulk acoustic wave resonator unit, and t indicates thin
The physical thickness of film, v indicate sound wave along the spread speed of thin film physics thickness direction, and d (t) indicates that film is equal in physical thickness
Acoustic thickness on the position of t.
The utility model additionally provides a kind of thin-film bulk acoustic wave filter, which includes at least one
Thin film bulk acoustic wave resonator unit, wherein at least one thin film bulk acoustic wave resonator unit is humorous using above-mentioned film bulk acoustic
Thin film bulk acoustic wave resonator unit in device structure of shaking.
Film bulk acoustic resonator structure provided by the utility model include wafer substrate and be located at the wafer substrate
On multiple laminated construction, multiple laminated construction and wafer substrate form multiple thin film bulk acoustic wave resonator units, each folded
Layer structure successively includes Bragg reflecting layer, lower electrode layer, piezoelectric layer and upper electrode layer from bottom to up, wherein multiple
Thickness of the double-layer films in lower electrode layer, piezoelectric layer, upper electrode layer in wafer substrate in thin film bulk acoustic wave resonator unit
Degree is distributed according to the distribution of the first variation tendency, thickness of another layer film in wafer substrate according to the second variation tendency, and first
Variation tendency is opposite with the second variation tendency.In this way, which film bulk acoustic resonator structure provided by the utility model can
To guarantee that the overall thickness of the three-layer thin-film of thin film bulk acoustic wave resonator unit thereon has uniformity in wafer substrate, thus
The frequency distribution range of the thin film bulk acoustic wave resonator unit in same wafer substrate can effectively be reduced, and then can be with
Frequency times of revision and duration needed for being subsequently formed thin-film bulk acoustic wave filter are efficiently reduced, is not only advantageous to reduce thin
The production cost of film bulk acoustic resonator structure and thin-film bulk acoustic wave filter, also advantageously improves thin-film bulk acoustic wave filter
Yield rate.Correspondingly, film is formed by based on the thin film bulk acoustic wave resonator unit in structure provided by the utility model
Bulk accoustic wave filter has the advantages that at low cost, high yield rate under the premise of guaranteeing that work is in range of target frequencies.
Detailed description of the invention
By reading a detailed description of non-restrictive embodiments in the light of the attached drawings below, the utility model
Other features, objects and advantages will become more apparent upon：
Fig. 1 (a) is the structure edge after forming multiple air lumen type bulk acoustic wave resonators in wafer substrate in the prior art
The diagrammatic cross-section of wafer substrate diameter, wherein upper electrode layer, piezoelectric layer and lower electrode layer in air lumen type bulk acoustic wave resonator
Total acoustic thickness from the center of wafer substrate along half radial edges be incremented by；
Fig. 1 (b) is the structure edge after forming multiple air lumen type bulk acoustic wave resonators in wafer substrate in the prior art
The diagrammatic cross-section of wafer substrate diameter, wherein upper electrode layer, piezoelectric layer and lower electrode layer in air lumen type bulk acoustic wave resonator
Total acoustic thickness successively decrease from the center of wafer substrate along half radial edges；
Fig. 1 (c) is the structure edge after forming multiple air lumen type bulk acoustic wave resonators in wafer substrate in the prior art
The diagrammatic cross-section of wafer substrate diameter, wherein upper electrode layer, piezoelectric layer and lower electrode layer in air lumen type bulk acoustic wave resonator
Total acoustic thickness along wafer substrate diametrical direction be incremented by；
Fig. 2 (a) is that the section of the film bulk acoustic resonator structure of a preferred embodiment according to the present utility model shows
It is intended to；
Fig. 2 (b) is the section of the film bulk acoustic resonator structure of another preferred embodiment according to the present utility model
Schematic diagram；
Fig. 3 (a) is the section of the film bulk acoustic resonator structure of another preferred embodiment according to the present utility model
Schematic diagram；
Fig. 3 (b) is the section of the film bulk acoustic resonator structure of another preferred embodiment according to the present utility model
Schematic diagram.
The same or similar appended drawing reference represents the same or similar component in attached drawing.
Specific embodiment
In order to better understand with explaination the utility model, the utility model is made below in conjunction with attached drawing further detailed
Thin description.
The utility model provides a kind of film bulk acoustic resonator structure, specifically a kind of Bragg reflection stratotype body sound
Wave resonator structure.The film bulk acoustic resonator structure includes wafer substrate and multiple laminations in the wafer substrate
Structure, multiple laminated construction and the wafer substrate form multiple thin film bulk acoustic wave resonator units, wherein each lamination knot
Structure from bottom to up successively include Bragg reflecting layer, lower electrode layer, piezoelectric layer and upper electrode layer, wherein：
The double-layer films in lower electrode layer, piezoelectric layer, upper electrode layer in the multiple thin film bulk acoustic wave resonator unit
Be distributed according to the first variation tendency in the thickness in the wafer substrate, thickness of another layer film in the wafer substrate according to
Second variation tendency distribution, wherein the first variation tendency is opposite with the second variation tendency.
In the following, the various pieces of above-mentioned thin film bulk acoustic wave resonator provided by the utility model are described in detail.
Specifically, the material of wafer substrate can be silicon, silica, quartz, diamond, glass etc..Those skilled in the art
It is understood that the material of wafer substrate is not limited in the example above, other are all to be used to form wafer substrate, makes it member
Material with supporting role is included in the range of the utility model protects, for brevity, herein no longer one by one
It enumerates.In the present embodiment, the specification of wafer substrate can be 6 inches, 8 inches, 12 inches etc..
Multiple laminated construction are provided in wafer substrate, multiple laminated construction and wafer substrate form multiple thin-film bodies
Acoustic resonator unit.In the present embodiment, which is Bragg reflection stratotype bulk acoustic resonance
Device unit, wherein each laminated construction from bottom to up successively include Bragg reflecting layer, lower electrode layer, piezoelectric layer and on
Electrode layer.
Bragg reflecting layer, which is alternately stacked by high acoustic impedance layer and low acoustic impedance layer, to be formed, wherein high acoustic impedance layer and
Total number of plies of low acoustic impedance layer is preferably 4 to 8 layers.The material of high acoustic impedance layer can be tungsten (W), molybdenum (Mo), aluminium nitride
(AlN), one of platinum (Pt) or any combination thereof, the material of low acoustic impedance layer can be silica (SiO2) etc..It needs
Illustrate, be directed to for adjacent high acoustic impedance layer and low acoustic impedance layer, can be completely covered between the two can also be with
Part covers, and does not do any restriction to this herein.In addition it is also necessary to which explanation, Bragg reflecting layer can be covering wafer
One en-block construction of substrate whole surface is also possible to be distributed in multiple independent structures in wafer substrate, herein also not to this
Do any restriction.
Lower electrode layer is formed using conductive material, wherein the conductive material includes but is not limited to
One of molybdenum (Mo), tungsten (W), aluminium (Al), titanium (Ti), copper (Cu), ruthenium (Ru), platinum (Pt) or any combination thereof.It needs herein
Illustrate, lower electrode layer can cover entire Bragg reflecting layer or only covering part Bragg reflecting layer, right herein
This does not do any restriction.
The material of piezoelectric layer includes but is not limited to aluminium nitride (AlN), mixes scandium aluminium nitride (AlScN), zinc oxide (ZnO), zirconium
One of lead titanates (PZT) or any combination thereof.Herein it should be noted that piezoelectric layer can cover entire lower electrode layer,
Can also only covering part lower electrode layer, do not do any restriction to this herein.
Upper electrode layer is formed using conductive material, wherein the conductive material includes but is not limited to
One of molybdenum (Mo), tungsten (W), aluminium (Al), titanium (Ti), copper (Cu), ruthenium (Ru), platinum (Pt) or any combination thereof.It needs herein
Illustrate, upper electrode layer can cover entire piezoelectric layer or only covering part piezoelectric layer, not do any limit to this herein
It is fixed.
In the present embodiment, the thickness of lower electrode layer, piezoelectric layer, the double-layer films in upper electrode layer in the wafer substrate
It is distributed according to the distribution of the first variation tendency, thickness of another layer film in the wafer substrate according to the second variation tendency, first
Variation tendency is opposite with the second variation tendency.Specifically, can be the thickness of lower electrode layer and piezoelectric layer in wafer substrate by
It is distributed according to the distribution of the first variation tendency, thickness of the upper electrode layer in wafer substrate according to the second variation tendency；Under being also possible to
The thickness of electrode layer and upper electrode layer in wafer substrate is distributed according to the first variation tendency, thickness of the piezoelectric layer in wafer substrate
Degree is distributed according to the second variation tendency；It can also be the thickness of piezoelectric layer and upper electrode layer in wafer substrate according to the first variation
Trend distribution, thickness of the upper electrode layer in wafer substrate are distributed according to the second variation tendency.In the present embodiment, the first variation
Trend and the second variation tendency include the following three types situation：
(1) first variation tendency is that the thickness of film is incremented by from the center of wafer substrate along half radial edges, the second variation
Trend is that the thickness of film successively decreases from the center of wafer substrate along half radial edges；
(2) first variation tendencies are that the thickness of film successively decreases from the center of wafer substrate along half radial edges, the second variation
Trend is that the thickness of film is incremented by from the center of wafer substrate along half radial edges；
(3) first variation tendencies are that the thickness of film is incremented by along the diametrical direction of wafer substrate, and the second variation tendency is thin
The thickness of film successively decreases along the same diametrical direction of wafer substrate.
It should be noted that the above-mentioned center from wafer substrate is along half radial edges incremented/decremented and along wafer substrate
The incremental variation tendency of diametrical direction be only preferred embodiment, it is in other embodiments, all to can be achieved and be in opposite shape
The first variation tendency and the second variation tendency of state are each fallen in the range of the utility model protects, for brevity,
This is repeated no more.
Preferably, its lower electrode of multiple Bragg reflection stratotype bulk acoustic wave resonator units is formed by wafer substrate
The overall thickness of layer, piezoelectric layer and upper electrode layer is all the same, in this way, can make all Prague formed in wafer substrate
Reflect stratotype bulk acoustic wave resonator unit working frequency having the same.It will be appreciated by persons skilled in the art that due to system
There is a certain error for standby technique, therefore Bragg reflection stratotype bulk acoustic wave resonator list is finally formed by wafer substrate
The overall thickness of its first lower electrode layer, piezoelectric layer and upper electrode layer three-layer thin-film usually fluctuates near the fixed numbers, this
In the case of, the frequency distribution that Bragg reflection stratotype bulk acoustic wave resonator unit is formed by wafer substrate is relatively narrow at one
In the range of.
Preferably, the thickness of film refers to that the acoustic thickness of film, the i.e. thickness of lower electrode layer refer to lower electrode layer
Acoustic thickness, piezoelectric layer thickness refer to the acoustic thickness of piezoelectric layer, the thickness of upper electrode layer refers to upper electrode layer
Acoustic thickness.The acoustic thickness of film is defined as follows herein：
The π of d (t)=2 ft/v
Wherein, f indicates the centre frequency of thin film bulk acoustic wave resonator unit, and t indicates the physical thickness of film, v expression sound
Spread speed of the wave along thin film physics thickness direction, acoustic thickness of d (t) the expression film on position of the physical thickness equal to t.
It will be appreciated by persons skilled in the art that the definition of above-mentioned film acoustic thickness is preferred embodiment, at it
In his embodiment, the acoustic thickness of film can also no longer be arranged one by one herein for brevity using other definition modes
It lifts.In addition, the thickness of film can also refer to the physical thickness of film.
Film bulk acoustic resonator structure provided by the utility model is illustrated with two preferred embodiments below.
Please refer to Fig. 2 (a) and Fig. 2 (b).As shown in Fig. 2 (a), film bulk acoustic resonator structure includes wafer substrate 100 and is located at
Three laminated construction in the wafer substrate 100 are (it will be appreciated by persons skilled in the art that three laminated construction are because of citing
Signal, in actual production, the quantity needs of resonator element are determined according to specific design requirement in wafer substrate),
In, each laminated construction constitutes a Bragg reflection stratotype bulk acoustic wave resonator list with the wafer substrate 100 being disposed below
Member.In the present embodiment, each laminated construction successively includes by the first high acoustic impedance layer 110a, the first low acoustic impedance from bottom to up
Bragg reflecting layer that layer 110b, the second high acoustic impedance layer 110c and the second low acoustic impedance layer 110d are constituted, lower electrode layer 120,
Piezoelectric layer 130 and upper electrode layer 140, wherein the acoustic thickness of lower electrode layer 120 is from the center of wafer substrate 100 along radius
It is incremented by edge, the acoustic thickness of piezoelectric layer 130 successively decreases from the center of wafer substrate 100 along half radial edges, upper electrode layer 140
Acoustic thickness from the center of wafer substrate 100 along half radial edges be incremented by.In this way, the lower electrode layer being ultimately formed
120, total acoustic thickness of 140 three-layer thin-film of piezoelectric layer 130 and lower electrode layer shows uniformly in wafer substrate 100
Property, i.e., the working frequency of multiple Bragg reflection stratotype bulk acoustic wave resonators in wafer substrate 100 is evenly distributed.Such as Fig. 2
(b) shown in, film bulk acoustic resonator structure wafer substrate 100 and three laminated construction in the wafer substrate 100,
Wherein, each laminated construction constitutes a Bragg reflection stratotype bulk acoustic wave resonator with the wafer substrate 100 being disposed below
Unit.In the present embodiment, each laminated construction successively includes being hindered in a low voice by the first high acoustic impedance layer 110a, first from bottom to up
Bragg reflecting layer, the lower electrode layer that anti-layer 110b, the second high acoustic impedance layer 110c and the second low acoustic impedance layer 110d are constituted
120, piezoelectric layer 130 and upper electrode layer 140, wherein the acoustic thickness of lower electrode layer 120 is passed along the diametrical direction of wafer substrate
Increase, the acoustic thickness of piezoelectric layer 130 successively decreases along the same diametrical direction of wafer substrate, and the acoustic thickness of upper electrode layer 140 is along brilliant
The same diametrical direction of circle substrate is incremented by.In this way, the lower electrode layer 120 being ultimately formed, piezoelectric layer 130 and lower electrode
Total acoustic thickness of 140 three-layer thin-film of layer shows uniformity in wafer substrate 100, i.e., multiple in wafer substrate 100
The working frequency of Bragg reflection stratotype bulk acoustic wave resonator is evenly distributed.
Since multiple Prague in Bragg reflection stratotype bulk acoustic resonator structure provided by the utility model are anti-
Penetrate double-layer films its thickness distribution in stratotype bulk acoustic wave resonator its lower electrode layer, piezoelectric layer and upper electrode layer three-layer thin-film
The first variation tendency and the second variation tendency of other its thickness distribution of thin film be opposite, therefore the three-layer thin-film
Thickness distribution forms complementation to a certain extent.Identical change is all had with the thickness distribution of three-layer thin-film in the prior art to become
The Bragg reflection stratotype bulk acoustic resonator structure of gesture is compared, Bragg reflection stratotype bulk acoustic wave provided by the utility model
Resonator structure is by forming the opposite film of thickness distribution variation tendency, so that being formed in thickness distribution between three-layer thin-film
Certain complementation, in this way, can effectively improve uniformity of the overall thickness of the three-layer thin-film in wafer substrate, from
And it can effectively reduce the frequency distribution of the Bragg reflection stratotype bulk acoustic wave resonator unit in same wafer substrate
Range, so can be effectively reduced be subsequently formed thin-film bulk acoustic wave filter needed for frequency times of revision and duration, no
But the production cost of Bragg reflection stratotype bulk acoustic resonator structure and thin-film bulk acoustic wave filter is advantageously reduced, it is also advantageous
In the yield rate for improving thin-film bulk acoustic wave filter.
The utility model additionally provides a kind of thin-film bulk acoustic wave filter, which includes at least one
Thin film bulk acoustic wave resonator unit, wherein at least one thin film bulk acoustic wave resonator unit uses previously described thin-film body
Thin film bulk acoustic wave resonator unit (i.e. cloth in acoustic resonator structure (i.e. Bragg reflection stratotype bulk acoustic resonator structure)
Glug reflects stratotype bulk acoustic wave resonator unit) it realizes.Typically, thin-film bulk acoustic wave filter packet provided by the utility model
Include series-connected stage Bragg reflection stratotype bulk acoustic wave resonator and parallel level Bragg reflection stratotype bulk acoustic wave resonator, wherein string
Connection grade Bragg reflection stratotype bulk acoustic wave resonator is connected between input terminal and output end by concatenated mode, parallel level cloth
Glug reflection stratotype bulk acoustic wave resonator is then located between two series-connected stage Bragg reflection stratotype bulk acoustic wave resonators or position
Between series-connected stage Bragg reflection stratotype bulk acoustic wave resonator and input/output terminal.Due to provided by the utility model thin
The structure of membrane body acoustic wave filter has numerous possibilities, for brevity, herein no longer to thin-film bulk acoustic wave filter
All possibility structures are enumerated.It should be noted that in actual production, first in previously described Bragg reflection
Thin-film bulk acoustic wave filter is formed on stratotype bulk acoustic resonator structure, wherein each thin-film bulk acoustic wave filter includes at least
One Bragg reflection stratotype bulk acoustic wave resonator unit can generally form multiple film bulk acoustics filters in one wafer substrate
Then wave device cuts the wafer substrate to obtain multiple thin-film bulk acoustic wave filter.It is mentioned based on the utility model
Bragg reflection stratotype bulk acoustic wave resonator unit in the Bragg reflection stratotype bulk acoustic resonator structure of confession is formed by
Thin-film bulk acoustic wave filter has the advantages that at low cost, high yield rate under the premise of guaranteeing that work is in range of target frequencies.
The utility model additionally provides a kind of thin film bulk acoustic wave resonator, specifically a kind of air lumen type bulk acoustic wave resonator
Structure.The film bulk acoustic resonator structure includes wafer substrate and multiple laminated construction in the wafer substrate, is somebody's turn to do
Multiple laminated construction and the wafer substrate form multiple thin film bulk acoustic wave resonator units, wherein each laminated construction is under
Supreme successively includes lower electrode layer, piezoelectric layer and upper electrode layer, lower electrode layer and the wafer in each laminated construction
Cavity is respectively formed between substrate, wherein：
The double-layer films in lower electrode layer, piezoelectric layer, upper electrode layer in the multiple thin film bulk acoustic wave resonator unit
Be distributed according to the first variation tendency in the thickness in the wafer substrate, thickness of another layer film in the wafer substrate according to
Second variation tendency distribution, wherein the first variation tendency is opposite with the second variation tendency.
In the following, the various pieces of above-mentioned thin film bulk acoustic wave resonator provided by the utility model are described in detail.
Specifically, the material of wafer substrate can be silicon, silica, quartz, diamond, glass etc..Those skilled in the art
It is understood that the material of wafer substrate is not limited in the example above, other are all to be used to form wafer substrate, makes it member
Material with supporting role is included in the range of the utility model protects, for brevity, herein no longer one by one
It enumerates.In the present embodiment, the specification of wafer substrate can be 6 inches, 8 inches, 12 inches etc..
Multiple laminated construction are provided in wafer substrate, multiple laminated construction and wafer substrate form multiple thin-film bodies
Acoustic resonator unit.In the present embodiment, which is air lumen type bulk acoustic wave resonator unit,
Wherein, each laminated construction includes successively from bottom to up lower electrode layer, piezoelectric layer and upper electrode layer, in each laminated construction
Lower electrode layer and wafer substrate between be respectively formed cavity.
Lower electrode layer is formed using conductive material, wherein the conductive material includes but is not limited to
One of molybdenum (Mo), tungsten (W), aluminium (Al), titanium (Ti), copper (Cu), ruthenium (Ru), platinum (Pt) or any combination thereof.It needs herein
Illustrate, lower electrode layer can cover entire cavity or only covering part cavity, not do any restriction to this herein.
The material of piezoelectric layer includes but is not limited to aluminium nitride (AlN), mixes scandium aluminium nitride (AlScN), zinc oxide (ZnO), zirconium
One of lead titanates (PZT) or any combination thereof.Herein it should be noted that piezoelectric layer can cover entire lower electrode layer,
Can also only covering part lower electrode layer, do not do any restriction to this herein.
Upper electrode layer is formed using conductive material, wherein the conductive material includes but is not limited to
One of molybdenum (Mo), tungsten (W), aluminium (Al), titanium (Ti), copper (Cu), ruthenium (Ru), platinum (Pt) or any combination thereof.It needs herein
Illustrate, upper electrode layer can cover entire piezoelectric layer or only covering part piezoelectric layer, not do any limit to this herein
It is fixed.
In the present embodiment, the thickness of lower electrode layer, piezoelectric layer, the double-layer films in upper electrode layer in the wafer substrate
It is distributed according to the distribution of the first variation tendency, thickness of another layer film in the wafer substrate according to the second variation tendency, first
Variation tendency is opposite with the second variation tendency.Specifically, can be the thickness of lower electrode layer and piezoelectric layer in wafer substrate by
It is distributed according to the distribution of the first variation tendency, thickness of the upper electrode layer in wafer substrate according to the second variation tendency；Under being also possible to
The thickness of electrode layer and upper electrode layer in wafer substrate is distributed according to the first variation tendency, thickness of the piezoelectric layer in wafer substrate
Degree is distributed according to the second variation tendency；It can also be the thickness of piezoelectric layer and upper electrode layer in wafer substrate according to the first variation
Trend distribution, thickness of the upper electrode layer in wafer substrate are distributed according to the second variation tendency.In the present embodiment, the first variation
Trend and the second variation tendency include the following three types situation：
(1) first variation tendency is that the thickness of film is incremented by from the center of wafer substrate along half radial edges, the second variation
Trend is that the thickness of film successively decreases from the center of wafer substrate along half radial edges；
(2) first variation tendencies are that the thickness of film successively decreases from the center of wafer substrate along half radial edges, the second variation
Trend is that the thickness of film is incremented by from the center of wafer substrate along half radial edges；
(3) first variation tendencies are that the thickness of film is incremented by along the diametrical direction of wafer substrate, and the second variation tendency is thin
The thickness of film successively decreases along the same diametrical direction of wafer substrate.
It should be noted that the above-mentioned center from wafer substrate is along half radial edges incremented/decremented and along wafer substrate
The incremental variation tendency of diametrical direction be only preferred embodiment, it is in other embodiments, all to can be achieved and be in opposite shape
The first variation tendency and the second variation tendency of state are each fallen in the range of the utility model protects, for brevity,
This is repeated no more.
Preferably, multiple air chamber bulk acoustic wave resonator units its lower electrode layers, piezoelectric layer are formed by wafer substrate
And the overall thickness of upper electrode layer is all the same, in this way, which all air lumen type bulk acoustic waves formed in wafer substrate can be made
Resonator element working frequency having the same.It will be appreciated by persons skilled in the art that since preparation process exists centainly
Error, therefore air lumen type bulk acoustic wave resonator unit its lower electrode layer, piezoelectric layer are finally formed by wafer substrate
And the overall thickness of upper electrode layer three-layer thin-film usually fluctuates near the fixed numbers, in this case, in wafer substrate
The frequency distribution of air lumen type bulk acoustic wave resonator unit is formed by a relatively narrow range.
Preferably, the thickness of film refers to that the acoustic thickness of film, the i.e. thickness of lower electrode layer refer to lower electrode layer
Acoustic thickness, piezoelectric layer thickness refer to the acoustic thickness of piezoelectric layer, the thickness of upper electrode layer refers to upper electrode layer
Acoustic thickness.The acoustic thickness of film is defined as follows herein：
The π of d (t)=2 ft/v
Wherein, f indicates the centre frequency of thin film bulk acoustic wave resonator unit, and t indicates the physical thickness of film, v expression sound
Spread speed of the wave along thin film physics thickness direction, acoustic thickness of d (t) the expression film on position of the physical thickness equal to t.
It will be appreciated by persons skilled in the art that the definition of above-mentioned film acoustic thickness is preferred embodiment, at it
In his embodiment, the acoustic thickness of film can also no longer be arranged one by one herein for brevity using other definition modes
It lifts.In addition, the thickness of film can also refer to the physical thickness of film.
Film bulk acoustic resonator structure provided by the utility model is illustrated with two preferred embodiments below.
Please refer to Fig. 3 (a) and Fig. 3 (b).As shown in Fig. 3 (a), film bulk acoustic resonator structure includes wafer substrate 220 and is located at
Three laminated construction in the wafer substrate 200, wherein each laminated construction is constituted with the wafer substrate 200 being disposed below
One air lumen type bulk acoustic wave resonator unit.In the present embodiment, each laminated construction successively includes lower electrode from bottom to up
Layer 210, piezoelectric layer 220 and upper electrode layer 230 form cavity 201 between wafer substrate 200 and lower electrode layer 210, wherein
The acoustic thickness of lower electrode layer 210 is incremented by from the center of wafer substrate 200 along half radial edges, the acoustic thickness of piezoelectric layer 220
Successively decrease from the center of wafer substrate 200 along half radial edges, the acoustic thickness of upper electrode layer 230 is from the center of wafer substrate 200
It is incremented by along half radial edges.In this way, the lower electrode layer 210 being ultimately formed, piezoelectric layer 220 and lower electrode layer 230 3
Total acoustic thickness of layer film shows uniformity, i.e., multiple air lumen type in wafer substrate 200 in wafer substrate 200
The working frequency of bulk acoustic wave resonator is evenly distributed.As shown in Fig. 3 (b), film bulk acoustic resonator structure wafer substrate 200
And three laminated construction in the wafer substrate 200, wherein each laminated construction and the wafer substrate being disposed below
200 constitute an air lumen type bulk acoustic wave resonator unit.In the present embodiment, each laminated construction successively includes from bottom to up
Lower electrode layer 210, piezoelectric layer 220 and upper electrode layer 230 form cavity 201 between wafer substrate 200 and lower electrode layer 210,
Wherein, the acoustic thickness of lower electrode layer 210 is incremented by along the diametrical direction of wafer substrate, and the acoustic thickness of piezoelectric layer 220 is along wafer
The same diametrical direction of substrate is successively decreased, and the acoustic thickness of upper electrode layer 230 is incremented by along the same diametrical direction of wafer substrate.So
One, the total acoustic thickness for 230 three-layer thin-film of lower electrode layer 210, piezoelectric layer 220 and lower electrode layer being ultimately formed exists
Uniformity, i.e., the work of multiple Bragg reflection stratotype bulk acoustic wave resonators in wafer substrate 100 are showed in wafer substrate 200
Working frequency is evenly distributed.
Due to multiple air lumen type bulk acoustic waves in air lumen type bulk acoustic resonator structure provided by the utility model
First variation of double-layer films its thickness distribution in resonator its lower electrode layer, piezoelectric layer and upper electrode layer three-layer thin-film becomes
Second variation tendency of gesture and other its thickness distribution of thin film is opposite, therefore the thickness distribution of the three-layer thin-film is one
Determine to form complementation in degree.The air lumen type of Similar trend is all had with the thickness distribution of three-layer thin-film in the prior art
Bulk acoustic resonator structure is compared, and air lumen type bulk acoustic resonator structure provided by the utility model is by forming thickness point
The opposite film of cloth variation tendency, so that certain complementation is formd between three-layer thin-film in thickness distribution, in this way, can
To effectively improve uniformity of the overall thickness of the three-layer thin-film in wafer substrate, so as to effectively reduce positioned at same
The frequency distribution range of air lumen type bulk acoustic wave resonator unit in wafer substrate, and then can be effectively reduced and be subsequently formed
Frequency times of revision and duration needed for thin-film bulk acoustic wave filter are not only advantageous to reduce air lumen type bulk acoustic wave resonator
The production cost of structure and thin-film bulk acoustic wave filter also advantageously improves the yield rate of thin-film bulk acoustic wave filter.
The utility model additionally provides a kind of thin-film bulk acoustic wave filter, which includes at least one thin
Membrane body acoustic resonator unit, wherein at least one thin film bulk acoustic wave resonator unit uses previously described thin-film body sound
Thin film bulk acoustic wave resonator unit (i.e. air lumen type body in wave resonator structure (i.e. air lumen type bulk acoustic resonator structure)
Acoustic resonator unit) it realizes.Typically, thin-film bulk acoustic wave filter provided by the utility model includes series-connected stage air chamber
Stratotype bulk acoustic wave resonator and parallel level air chamber stratotype bulk acoustic wave resonator, wherein series-connected stage air lumen type bulk acoustic resonance
Device is connected between input terminal and output end by concatenated mode, and parallel level air lumen type bulk acoustic wave resonator is then located at two
Between series-connected stage air lumen type bulk acoustic wave resonator or positioned at series-connected stage air lumen type bulk acoustic wave resonator and input/output
Between end.Since the structure of thin-film bulk acoustic wave filter provided by the utility model has numerous possibilities, risen in order to concise
See, no longer all possible structures of thin-film bulk acoustic wave filter are enumerated herein.It should be noted that in practical life
In production, thin-film bulk acoustic wave filter is formed on previously described air lumen type bulk acoustic resonator structure first, wherein each
Thin-film bulk acoustic wave filter includes at least an air lumen type bulk acoustic wave resonator unit, usually can be with shape in a wafer substrate
At multiple air lumen type bulk accoustic wave filters, then the wafer substrate is cut to obtain multiple film bulk acoustic filtering
Device.Based on the air lumen type bulk acoustic wave resonator unit in air lumen type bulk acoustic resonator structure provided by the utility model
Thin-film bulk acoustic wave filter is formed by under the premise of guaranteeing that work is in range of target frequencies, there is at low cost, yield rate
High advantage.
It is obvious to a person skilled in the art that the present invention is not limited to the details of the above exemplary embodiments, and
And without departing substantially from the spirit or essential attributes of the utility model, it can realize that this is practical new in other specific forms
Type.Therefore, in all respects, the present embodiments are to be considered as illustrative and not restrictive, this is practical new
The range of type is indicated by the appended claims rather than the foregoing description, it is intended that containing for the equivalent requirements of the claims will be fallen in
All changes in justice and range are included in the utility model.It should not treat any reference in the claims as limiting
Related claim.Furthermore, it is to be understood that one word of " comprising " is not excluded for other component, unit or step, odd number is not excluded for plural number.
Multiple components, unit or the device stated in system claims can also by a component, unit or device by software or
Person hardware is realized.
Film bulk acoustic resonator structure provided by the utility model include wafer substrate and be located at the wafer substrate
On multiple laminated construction, multiple laminated construction and wafer substrate form multiple thin film bulk acoustic wave resonator units, each folded
Layer structure successively includes Bragg reflecting layer, lower electrode layer, piezoelectric layer and upper electrode layer from bottom to up, wherein multiple
Thickness of the double-layer films in lower electrode layer, piezoelectric layer, upper electrode layer in wafer substrate in thin film bulk acoustic wave resonator unit
Degree is distributed according to the distribution of the first variation tendency, thickness of another layer film in wafer substrate according to the second variation tendency, and first
Variation tendency is opposite with the second variation tendency.In this way, which film bulk acoustic resonator structure provided by the utility model can
To guarantee that the overall thickness of the three-layer thin-film of thin film bulk acoustic wave resonator unit thereon has uniformity in wafer substrate, thus
The frequency distribution range of the thin film bulk acoustic wave resonator unit in same wafer substrate can effectively be reduced, and then can be with
Frequency times of revision and duration needed for being subsequently formed thin-film bulk acoustic wave filter are efficiently reduced, is not only advantageous to reduce thin
The production cost of film bulk acoustic resonator structure and thin-film bulk acoustic wave filter, also advantageously improves thin-film bulk acoustic wave filter
Yield rate.Correspondingly, film is formed by based on the thin film bulk acoustic wave resonator unit in structure provided by the utility model
Bulk accoustic wave filter has the advantages that at low cost, high yield rate under the premise of guaranteeing that work is in range of target frequencies.
Above disclosed is only some preferred embodiments of the utility model, cannot limit this reality certainly with this
With novel interest field, therefore equivalent variations made according to the claim of the utility model, still belong to the utility model and is covered
Range.
Claims (12)
1. a kind of film bulk acoustic resonator structure, which includes wafer substrate and is located at the crystalline substance
Multiple laminated construction on circle substrate, multiple laminated construction and the wafer substrate form multiple thin film bulk acoustic wave resonator lists
Member, wherein each laminated construction successively includes Bragg reflecting layer, lower electrode layer, piezoelectric layer and top electrode from bottom to up
Layer, it is characterised in that：
The double-layer films in lower electrode layer, piezoelectric layer, upper electrode layer in the multiple thin film bulk acoustic wave resonator unit are in institute
State that the thickness in wafer substrate is distributed according to the first variation tendency, thickness of another layer film in the wafer substrate is according to second
Variation tendency distribution, wherein the first variation tendency is opposite with the second variation tendency.
2. film bulk acoustic resonator structure according to claim 1, it is characterised in that：
First variation tendency be film thickness from the center of the wafer substrate along half radial edges incremented/decremented, institute
The thickness that the second variation tendency is film is stated to successively decrease/be incremented by along half radial edges from the center of the wafer substrate；Or
First variation tendency is that the thickness of film is incremented by along the diametrical direction of the wafer substrate, second variation tendency
It is that the thickness of film successively decreases along the diametrical direction of the wafer substrate.
3. film bulk acoustic resonator structure according to claim 1 or 2, which is characterized in that the multiple thin-film body sound
The overall thickness of wave resonator unit its lower electrode layer, piezoelectric layer and upper electrode layer is all the same.
4. film bulk acoustic resonator structure according to claim 1 or 2, which is characterized in that the thickness is film
Acoustic thickness.
5. film bulk acoustic resonator structure according to claim 4, which is characterized in that the acoustic thickness of the film
Expression formula is as follows：
The π of d (t)=2 ft/v
Wherein, f indicates the centre frequency of thin film bulk acoustic wave resonator unit, and t indicates that the physical thickness of film, v indicate sound wave edge
The spread speed of thin film physics thickness direction, d (t) indicate acoustic thickness of the film on position of the physical thickness equal to t.
6. a kind of thin-film bulk acoustic wave filter, which includes at least one thin film bulk acoustic wave resonator list
Member, wherein at least one thin film bulk acoustic wave resonator unit uses film described in any one of claim 1 to 5
Thin film bulk acoustic wave resonator unit in bulk acoustic resonator structure.
7. a kind of film bulk acoustic resonator structure, which includes wafer substrate and is located at the crystalline substance
Multiple laminated construction on circle substrate, multiple laminated construction and the wafer substrate form multiple thin film bulk acoustic wave resonator lists
Member, wherein each laminated construction successively includes lower electrode layer, piezoelectric layer and upper electrode layer, each lamination knot from bottom to up
Cavity is respectively formed between lower electrode layer and the wafer substrate in structure, it is characterised in that：
The double-layer films in lower electrode layer, piezoelectric layer, upper electrode layer in the multiple thin film bulk acoustic wave resonator unit are in institute
State that the thickness in wafer substrate is distributed according to the first variation tendency, thickness of another layer film in the wafer substrate is according to second
Variation tendency distribution, wherein the first variation tendency is opposite with the second variation tendency.
8. film bulk acoustic resonator structure according to claim 7, it is characterised in that：
First variation tendency be film thickness from the center of the wafer substrate along half radial edges incremented/decremented, institute
The thickness that the second variation tendency is film is stated to successively decrease/be incremented by along half radial edges from the center of the wafer substrate；Or
First variation tendency is that the thickness of film is incremented by along the diametrical direction of the wafer substrate, second variation tendency
It is that the thickness of film successively decreases along the diametrical direction of the wafer substrate.
9. film bulk acoustic resonator structure according to claim 7 or 8, which is characterized in that the multiple thin-film body sound
The overall thickness of wave resonator unit its lower electrode layer, piezoelectric layer and upper electrode layer is all the same.
10. film bulk acoustic resonator structure according to claim 7 or 8, which is characterized in that the thickness is film
Acoustic thickness.
11. film bulk acoustic resonator structure according to claim 10, which is characterized in that the acoustic thickness of the film
Expression formula it is as follows：
The π of d (t)=2 ft/v
Wherein, f indicates the centre frequency of thin film bulk acoustic wave resonator unit, and t indicates that the physical thickness of film, v indicate sound wave edge
The spread speed of thin film physics thickness direction, d (t) indicate acoustic thickness of the film on position of the physical thickness equal to t.
12. a kind of thin-film bulk acoustic wave filter, which includes at least one thin film bulk acoustic wave resonator list
Member, wherein at least one thin film bulk acoustic wave resonator unit is using film described in any one of described claim 7 to 11
Thin film bulk acoustic wave resonator unit in bulk acoustic resonator structure.
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