CN115225051A - Resonator structure, method for producing a resonator structure - Google Patents
Resonator structure, method for producing a resonator structure Download PDFInfo
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- CN115225051A CN115225051A CN202211141226.4A CN202211141226A CN115225051A CN 115225051 A CN115225051 A CN 115225051A CN 202211141226 A CN202211141226 A CN 202211141226A CN 115225051 A CN115225051 A CN 115225051A
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- 238000004519 manufacturing process Methods 0.000 title abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 21
- 238000002161 passivation Methods 0.000 claims description 47
- 238000005530 etching Methods 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 description 25
- 239000002184 metal Substances 0.000 description 25
- 238000010586 diagram Methods 0.000 description 18
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- 239000010949 copper Substances 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229910052707 ruthenium Inorganic materials 0.000 description 4
- 229910052706 scandium Inorganic materials 0.000 description 4
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
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- 229910052581 Si3N4 Inorganic materials 0.000 description 3
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- 239000000463 material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- -1 AlN nitride Chemical class 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 230000021715 photosynthesis, light harvesting Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The application relates to the technical field of resonators and discloses a resonator structure, which comprises: a top electrode structure; a piezoelectric layer connected to the top electrode structure; the bottom electrode structure is positioned on one side of the piezoelectric layer, which is far away from the top electrode structure; the bottom electrode structure is connected with one end of the piezoelectric layer, so that the other end of the piezoelectric layer is exposed out of the bottom electrode structure; a first groove is formed in one side, away from the piezoelectric layer, of the bottom electrode structure; a resonant carrier connecting the bottom electrode structure and the piezoelectric layer exposed outside the bottom electrode structure; the resonant carrier, the piezoelectric layer and the bottom electrode structure are enclosed to form a cavity, and the first groove is located in the cavity. Thus, by providing the first recess on the side of the bottom electrode structure remote from the piezoelectric layer, the use of the bottom electrode structure with the first recess participates in the enclosure to form the cavity, rather than the use of a flat bottom electrode to participate in the enclosure to form the cavity. The Q value of the resonator can be increased. The application also discloses a method for manufacturing a resonator structure.
Description
Technical Field
The present application relates to the field of resonator technology, for example to a resonator structure, a method for manufacturing a resonator structure.
Background
The larger the Q value of the resonator means the more energy dissipation constraint that needs to be paid with respect to the stored energy, i.e. the more efficient the resonant circuit is storing energy. Therefore, in designing a resonator, it is necessary to increase the Q value of the resonator. Bulk acoustic wave resonators typically have a cavity. As shown in fig. 1, in the related art, a cavity is enclosed by a bonding layer 4, a piezoelectric layer 1, a substrate 5 and a flat bottom electrode layer 2. In the resonator with the flat bottom electrode layer participating in enclosing to form the cavity, the Q value of the resonator changes as shown in fig. 2, wherein the abscissa in fig. 2 is frequency and the ordinate is Q value. As can be seen from fig. 2, the Q value of the resonator is low.
In the process of implementing the embodiment of the present application, it is found that at least the following problems exist in the related art: the resonator manufactured by the existing process for manufacturing the resonator has a low Q value.
Disclosure of Invention
The following presents a simplified summary in order to provide a basic understanding of some aspects of the disclosed embodiments. This summary is not an extensive overview nor is intended to identify key/critical elements or to delineate the scope of such embodiments but rather as a prelude to the more detailed description that is presented later.
The embodiment of the invention provides a resonator structure and a method for manufacturing the same, which are used for improving the Q value of a resonator.
In some embodiments, the resonator structure comprises: a top electrode structure; a piezoelectric layer connecting the top electrode structure; a bottom electrode structure located on a side of the piezoelectric layer away from the top electrode structure; the bottom electrode structure is connected with one end of the piezoelectric layer, so that the other end of the piezoelectric layer is exposed out of the bottom electrode structure; a first groove is formed in one side, away from the piezoelectric layer, of the bottom electrode structure; a resonant carrier connecting the bottom electrode structure and a piezoelectric layer exposed outside the bottom electrode structure; the resonance carrier, the piezoelectric layer and the bottom electrode structure are enclosed to form a cavity, and the first groove is located in the cavity.
In some embodiments, the bottom electrode structure comprises: the bottom electrode layer is connected with one end of the piezoelectric layer, so that the other end of the piezoelectric layer is exposed outside the bottom electrode layer; a first groove is formed in one side, away from the piezoelectric layer, of the bottom electrode layer; and the first passivation layer is positioned on one side of the bottom electrode layer, which is far away from the piezoelectric layer, and is connected with the bottom electrode layer.
In some embodiments, a first downward protrusion is disposed within the first groove, the first protrusion dividing the first groove into a second groove and a third groove; the height of the first protrusion is smaller than that of the first groove.
In some embodiments, the top electrode structure comprises: the top electrode layer is connected with one end of the piezoelectric layer, and the other end of the piezoelectric layer is exposed outside the top electrode layer; and the second passivation layer is positioned on one side, far away from the piezoelectric layer, of the top electrode layer and is connected with the top electrode layer.
In some embodiments, a side of the bottom electrode layer remote from the piezoelectric layer is provided with a fourth groove.
In some embodiments, an upward second protrusion is provided in the fourth groove, the second protrusion dividing the fourth groove into a fifth groove and a sixth groove; the height of the second protrusion is smaller than that of the fourth groove.
In some embodiments, the resonant carrier comprises: a substrate; a bonding layer defined as a hollow structure; one side of the bonding layer is connected with the substrate, and the other side of the bonding layer is connected with the bottom electrode structure and the piezoelectric layer exposed outside the bottom electrode structure; and enabling the resonant carrier, the piezoelectric layer and the bottom electrode structure to enclose to form a cavity.
In some embodiments, the resonant carrier comprises: a substrate; a high trapping layer disposed between the substrate and a bonding layer; the bonding layer is defined as a hollow structure; one side of the bonding layer is connected with the high-trapping layer, and the other side of the bonding layer is connected with the bottom electrode structure and the piezoelectric layer exposed outside the bottom electrode structure; and enabling the resonant carrier, the piezoelectric layer and the bottom electrode structure to enclose to form a cavity.
In some embodiments, a structure to be processed includes a bottom electrode layer, a top electrode layer, and a piezoelectric layer disposed between the bottom electrode layer and the top electrode layer. The method for manufacturing the resonator structure comprises the following steps: etching the bottom electrode layer to form a bottom electrode structure with a first groove; the bottom electrode structure exposes the piezoelectric layer; bonding a preset resonance carrier with the bottom electrode structure and the piezoelectric layer exposed outside the bottom electrode structure, so that the resonance carrier, the piezoelectric layer and the bottom electrode structure enclose to form a cavity, and the first groove is positioned in the cavity; and etching the top electrode layer to form a top electrode structure.
In some embodiments, etching the bottom electrode layer to form a bottom electrode structure with a first recess includes: etching the bottom electrode layer to expose the piezoelectric layer; etching the etched bottom electrode layer to form a first groove; and depositing a first passivation layer on the bottom electrode layer with the first groove, and determining the bottom electrode layer with the first groove and the first passivation layer as a bottom electrode structure.
The embodiment of the invention provides a resonator structure and a method for manufacturing the same. The following technical effects can be achieved: through the top electrode structure. And the piezoelectric layer is connected with the top electrode structure. And the bottom electrode structure is positioned on one side of the piezoelectric layer far away from the top electrode structure. The bottom electrode structure is connected to one end of the piezoelectric layer such that the other end of the piezoelectric layer is exposed outside the bottom electrode structure. One side of the bottom electrode structure, which is far away from the piezoelectric layer, is provided with a first groove. And a resonant carrier connecting the bottom electrode structure and the piezoelectric layer exposed outside the bottom electrode structure. The resonant carrier, the piezoelectric layer and the bottom electrode structure are enclosed to form a cavity, and the first groove is located in the cavity. In this way, the first groove is formed on the side, far away from the piezoelectric layer, of the bottom electrode structure, the bottom electrode structure with the first groove is used for participating in enclosing to form a cavity, and a flat bottom electrode layer is not used for participating in enclosing to form the cavity, so that the Q value of the resonator can be improved.
The foregoing general description and the following description are exemplary and explanatory only and are not restrictive of the application.
Drawings
One or more embodiments are illustrated by way of example in the accompanying drawings, which correspond to the accompanying drawings and not in limitation thereof, in which elements having the same reference numeral designations are shown as like elements and not in limitation thereof, and wherein:
fig. 1 is a schematic structural diagram of a conventional resonator provided in an embodiment of the present invention;
fig. 2 is a schematic diagram illustrating a variation in Q value of a first resonator according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a first resonator structure provided in an embodiment of the present invention;
FIG. 4 is a graph illustrating Q-value variation of a second resonator according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a second resonator structure provided in accordance with an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a third resonator structure provided in an embodiment of the present invention;
fig. 7 is a schematic diagram illustrating a variation of a Q value of a third resonator according to an embodiment of the present invention;
fig. 8 is a schematic structural diagram of a fourth resonator structure provided in an embodiment of the present invention;
FIG. 9 is a schematic diagram of a resonator frequency curve provided by an embodiment of the present invention;
FIG. 10 is a schematic diagram of a method for fabricating a resonator structure according to an embodiment of the present invention;
FIG. 11 is a schematic structural diagram of a bottom electrode layer after etching according to an embodiment of the present invention;
FIG. 12 is a schematic structural diagram illustrating a bottom electrode layer after etching is performed again according to an embodiment of the present invention;
FIG. 13 is a schematic diagram of a structure after deposition of a first metal layer and a second metal layer according to an embodiment of the present invention;
FIG. 14 is a schematic diagram of a structure after deposition of a first passivation layer according to an embodiment of the present invention;
FIG. 15 is a schematic diagram of a bonded structure provided by an embodiment of the present invention;
fig. 16 is a schematic structural diagram of a structure after etching the top electrode layer and the second passivation layer according to an embodiment of the present invention.
Reference numerals:
1. a piezoelectric layer; 2. a bottom electrode layer; 3. a top electrode layer; 4. a bonding layer; 5. a substrate; 6. a top electrode structure; 7. a bottom electrode structure; 8. a first passivation layer; 9. a second passivation layer; 10. a second groove; 11; a third groove; 12. a high trapping layer; 13. a first metal layer; 14. a second metal layer; 15: a resonant carrier.
Detailed Description
So that the manner in which the features and aspects of the embodiments of the present invention can be understood in detail, a more particular description of the embodiments of the invention, briefly summarized above, may be had by reference to the embodiments, some of which are illustrated in the appended drawings. In the following description of the technology, for purposes of explanation, numerous details are set forth in order to provide a thorough understanding of the disclosed embodiments. However, one or more embodiments may be practiced without these details. In other instances, well-known structures and devices may be shown in simplified form in order to simplify the drawing.
The terms "first," "second," and the like in the description and in the claims, and in the drawings, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It should be understood that the data so used may be interchanged under appropriate circumstances such that embodiments of the invention described herein may be used. Furthermore, the terms "include" and "have," as well as any variations thereof, are intended to cover a non-exclusive inclusion.
In the embodiments of the present invention, the terms "upper", "lower", "inner", "middle", "outer", "front", "rear", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings. These terms are used primarily to better describe embodiments of the invention and its embodiments, and are not intended to limit the indicated devices, elements or components to a particular orientation or to be constructed and operated in a particular orientation. Moreover, some of the above terms may be used in other meanings besides orientation or positional relationship, for example, the term "upper" may also be used in some cases to indicate a certain attaching or connecting relationship. Specific meanings of these terms in the embodiments of the present invention may be understood by those of ordinary skill in the art according to specific situations.
In addition, the terms "disposed," "connected," and "secured" are to be construed broadly. For example, "connected" may be a fixed connection, a detachable connection, or a unitary construction; can be a mechanical connection, or an electrical connection; may be directly connected, or indirectly connected through intervening media, or may be in internal communication between two devices, elements or components. Specific meanings of the above terms in the embodiments of the present invention can be understood by those of ordinary skill in the art according to specific situations.
The term "plurality" means two or more unless otherwise specified.
In the embodiment of the present invention, the character "/" indicates that the preceding and following objects are in an or relationship. For example, A/B represents: a or B.
The term "and/or" is an associative relationship that describes objects, meaning that three relationships may exist. For example, a and/or B, represents: a or B, or A and B.
It should be noted that, in the case of no conflict, the embodiments of the present invention and features of the embodiments may be combined with each other.
As shown in fig. 3, an embodiment of the present invention provides a resonator structure, including: a top electrode structure 6, a piezoelectric layer 1, a bottom electrode structure 7 and a resonant carrier 15. Wherein, the piezoelectric layer 1 is connected with the top electrode structure 6; a bottom electrode structure 7 located on a side of the piezoelectric layer 1 remote from the top electrode structure 6; the bottom electrode structure 7 is connected with one end of the piezoelectric layer 1, so that the other end of the piezoelectric layer 1 is exposed out of the bottom electrode structure 7; a first groove is formed in one side, away from the piezoelectric layer 1, of the bottom electrode structure 7; a resonant carrier 15 connecting the bottom electrode structure 7 and the piezoelectric layer 1 exposed outside the bottom electrode structure 7; the resonant carrier 15, the piezoelectric layer 1 and the bottom electrode structure 7 enclose a cavity, and the first groove is located in the cavity.
The resonator structure provided by the embodiment of the application is adopted, and the top electrode structure is adopted. And the piezoelectric layer is connected with the top electrode structure. And the bottom electrode structure is positioned on one side of the piezoelectric layer far away from the top electrode structure. The bottom electrode structure is connected to one end of the piezoelectric layer such that the other end of the piezoelectric layer is exposed outside the bottom electrode structure. One side of the bottom electrode structure, which is far away from the piezoelectric layer, is provided with a first groove. And a resonance carrier connecting the bottom electrode structure and the piezoelectric layer exposed outside the bottom electrode structure. The resonant carrier, the piezoelectric layer and the bottom electrode structure are enclosed to form a cavity, and the first groove is located in the cavity. In this way, the first groove is formed on the side, far away from the piezoelectric layer, of the bottom electrode structure, the bottom electrode structure with the first groove is used for participating in enclosing to form a cavity, and a flat bottom electrode layer is not used for participating in enclosing to form the cavity, so that the Q value of the resonator can be improved.
Optionally, the piezoelectric layer is made of AlN nitride, znO, liNbO 3 Lithium tantalate LiTaO 3 Lead zirconate titanate PZT and barium strontium titanate BST.
Optionally, the piezoelectric layer is made of aluminum nitride AlN doped with a rare earth element in a proportion of 5-30%. Optionally, the rare earth elements include: scandium, erbium, lanthanum and the like. For example: the piezoelectric layer is made of aluminum nitride or aluminum nitride doped with scandium in a proportion of 10%.
In some embodiments, the piezoelectric layer is formed from scandium-doped zinc oxide ZnO, scandium-doped lithium niobate LiNbO 3 Scandium-doped lithium tantalate (LiTaO) 3 And aluminum nitride AlN doped with scandium or aluminum scandium nitrogen AlScN doped with scandium.
As shown in connection with fig. 3, optionally, the bottom electrode structure 7 includes: a bottom electrode layer 2 and a first passivation layer 8. A bottom electrode layer 2 connected to one end of the piezoelectric layer 1 such that the other end of the piezoelectric layer 1 is exposed outside the bottom electrode layer 2; a first groove is formed in one side, away from the piezoelectric layer 1, of the bottom electrode layer 2; and the first passivation layer 8 is positioned on one side of the bottom electrode layer 2 away from the piezoelectric layer 1 and is connected with the bottom electrode layer 2. Thus, the provision of the first passivation layer can protect the bottom electrode layer while increasing the Q value of the resonator.
Further, the bottom electrode layer is made of one or more of metal materials with conductive performance such as molybdenum Mo, aluminum Al, gold Au, copper Cu, platinum Pt, tantalum Ta, tungsten W, palladium Pd and ruthenium Ru.
Further, the first passivation layer is made of silicon nitride SiN, aluminum nitride AlN and silicon dioxide SiO 2 And silicon oxynitride SiNO.
Optionally, the top electrode structure 6 comprises: a top electrode layer 3 and a second passivation layer 9. A top electrode layer 3 connected to one end of the piezoelectric layer 1 such that the other end of the piezoelectric layer 1 is exposed outside the top electrode layer 3; and a second passivation layer 9 is positioned on one side of the top electrode layer 3 away from the piezoelectric layer 1 and connected with the top electrode layer 3.
Further, the top electrode layer is made of one or more of metal materials with conductive performance such as molybdenum Mo, aluminum Al, gold Au, copper Cu, platinum Pt, tantalum Ta, tungsten W, palladium Pd and ruthenium Ru.
Furthermore, the second passivation layer is made of silicon nitride SiN, aluminum nitride AlN and silicon dioxide SiO 2 And silicon oxynitride SiNO.
Optionally, the resonant carrier 15 comprises: a substrate 5 and a bonding layer 4. A bonding layer 4 defined as a hollow structure; one side of the bonding layer 4 is connected with the substrate 5, and the other side of the bonding layer 4 is connected with the bottom electrode structure 7 and the piezoelectric layer 1 exposed outside the bottom electrode structure 7; the resonant carrier 15, the piezoelectric layer 1 and the bottom electrode structure 7 are enclosed to form a cavity. In this way, the bottom electrode layer provided with the first groove, the first passivation layer, the top electrode layer, the second passivation layer, the substrate, the bonding layer and the piezoelectric layer together form a resonator structure, and the resonator structure uses the bottom electrode structure with the first groove to participate in enclosing to form a cavity. The Q value change diagram of the resonator having this resonator structure is shown in fig. 4. In fig. 4, the abscissa represents frequency and the ordinate represents Q value. The Q-value of the resonator in fig. 4 is higher compared to the Q-value of the resonator in fig. 2. Therefore, compared with a resonator structure which uses a bottom electrode structure with a first groove to participate in enclosure to form a cavity, the resonator structure which uses the bottom electrode structure with the first groove to participate in enclosure to form the cavity can improve the Q value of the resonator.
Further, the substrate is made of silicon.
Further, the bonding layer is made of one or more of silicon dioxide, silicon nitride, organic film materials and ethyl silicate.
As shown in fig. 5, further, a downward first protrusion is disposed in the first groove, and the first protrusion divides the first groove into a second groove 10 and a third groove 11; the height of the first protrusion is smaller than that of the first groove. In this way, by providing the first recess at a side of the bottom electrode structure remote from the piezoelectric layer, which may lead to a stronger stray mode of the resonator, a downward first protrusion is provided in the first recess, and the height of the first protrusion is smaller than the height of the first recess. Thus, spurious modes can be effectively suppressed.
Optionally, the first protrusion is made of the same material as the bottom electrode layer.
Optionally, the first protrusion is made of one or more of metal materials having conductive properties such as molybdenum Mo, aluminum Al, gold Au, copper Cu, platinum Pt, tantalum Ta, tungsten W, palladium Pd, and ruthenium Ru.
Further, a fourth groove is formed in one side, away from the piezoelectric layer, of the top electrode layer.
Furthermore, an upward second bulge is arranged in the fourth groove, and the fourth groove is divided into a fifth groove and a sixth groove by the second bulge; the height of the second protrusion is smaller than that of the fourth groove.
Optionally, the second protrusion is made of the same material as the top electrode layer.
Optionally, the second protrusion is made of one or more of metal materials having conductive properties such as molybdenum Mo, aluminum Al, gold Au, copper Cu, platinum Pt, tantalum Ta, tungsten W, palladium Pd, and ruthenium Ru.
Optionally, the resonant carrier comprises: the substrate, the high trapping layer and the bonding layer. The high-trapping layer is arranged between the substrate and the bonding layer; a bonding layer defined as a hollow structure; one side of the bonding layer is connected with the high trapping layer, and the other side of the bonding layer is connected with the bottom electrode structure and the piezoelectric layer exposed outside the bottom electrode structure; and the resonant carrier, the piezoelectric layer and the bottom electrode structure are enclosed to form a cavity.
Further, the high trapping layer is made of polysilicon polycrystalline silicon and/or amorphous silicon α -Si.
In some embodiments, as shown in connection with fig. 6, the resonator structure comprises a top electrode structure 6, a piezoelectric layer 1, a bottom electrode structure 7 and a resonant carrier 15. Wherein the top electrode structure 6 is constituted by the top electrode layer 3 and the second passivation layer 9. The top electrode layer 3 is connected to one end of the piezoelectric layer 1 so that the other end of the piezoelectric layer 1 is exposed outside the top electrode layer 3. A second passivation layer 9 is located on the side of the top electrode layer 3 remote from the piezoelectric layer 1 in connection with the top electrode layer 3. The bottom electrode structure 7 is constituted by the bottom electrode layer 2 and the first passivation layer 8. The bottom electrode layer 2 is connected to one end of the piezoelectric layer 1, so that the other end of the piezoelectric layer 1 is exposed to the outside of the bottom electrode layer 2. The side of the bottom electrode layer 2 away from the piezoelectric layer 1 is provided with a first groove. And a first passivation layer 8 is positioned on one side of the bottom electrode layer 2 far away from the piezoelectric layer 1 and connected with the bottom electrode layer 2. The resonant carrier 15 is composed of a substrate 5, a high trapping layer 12 and a bonding layer 4. A high trapping layer 12 disposed between the substrate 5 and the bonding layer 4; and the bonding layer 4 is defined as a hollow structure. One side of the bonding layer 4 is connected with the high trapping layer 12, and the other side of the bonding layer 4 is connected with the bottom electrode structure 7 and the piezoelectric layer 1 exposed out of the bottom electrode structure 7. The resonant carrier 15, the piezoelectric layer 1 and the bottom electrode structure 7 enclose a cavity. Thus, the resonator structure uses a bottom electrode structure with a first recess and a resonant carrier with a high trapping layer to participate in enclosing the cavity. The resonator having this resonator structure can obtain a Q-value variation diagram of the resonator as shown in fig. 7. In fig. 7, the abscissa represents frequency and the ordinate represents Q value. As can be seen from fig. 7, the Q value of the resonator in fig. 7 is higher than that of the resonator in fig. 4. Therefore, the bottom electrode structure with the first groove and the resonance carrier with the high trapping layer jointly participate in enclosing to form a cavity, and the Q value of the resonator can be further improved.
In some embodiments, as shown in connection with fig. 8, the resonator structure comprises a top electrode structure 6, a piezoelectric layer 1, a bottom electrode structure 7 and a resonant carrier 15. Wherein the top electrode structure 6 is constituted by the top electrode layer 3 and the second passivation layer 9. The top electrode layer 3 is connected to one end of the piezoelectric layer 1 so that the other end of the piezoelectric layer 1 is exposed outside the top electrode layer 3. And a second passivation layer 9 is positioned on one side of the top electrode layer 3 far away from the piezoelectric layer 1 and connected with the top electrode layer 3. The bottom electrode structure 7 is constituted by the bottom electrode layer 2 and the first passivation layer 8. The bottom electrode layer 2 is connected to one end of the piezoelectric layer 1, so that the other end of the piezoelectric layer 1 is exposed to the outside of the bottom electrode layer 2. One side of the bottom electrode layer 2, which is far away from the piezoelectric layer 1, is provided with a first groove, a first downward protrusion is arranged in the first groove, and the first groove is divided into a second groove and a third groove by the first protrusion. The height of the first protrusion is smaller than that of the first groove. And a first passivation layer 8 is positioned on one side of the bottom electrode layer 2 far away from the piezoelectric layer 1 and connected with the bottom electrode layer 2. The resonant carrier 15 is composed of a substrate 5, a high trapping layer 12 and a bonding layer 4. And a high trapping layer 12 disposed between the substrate 5 and the bonding layer 4. A bonding layer 4 defined as a hollow structure; one side of the bonding layer 4 is connected with the high trapping layer 12, and the other side of the bonding layer 4 is connected with the piezoelectric layer 1 exposed outside the bottom electrode structure 7 and the bottom electrode structure 7. The resonant carrier 15, the piezoelectric layer 1 and the bottom electrode structure 7 enclose a cavity. In this way, the first groove is provided on the side of the bottom electrode structure away from the piezoelectric layer. A first protrusion is arranged in the first groove, and the height of the first protrusion is lower than that of the first groove. And a high trapping layer is provided in the resonant carrier. The resonator structure uses a bottom electrode structure with a first groove and a first bulge arranged in the first groove, and a high trapping layer of a resonance carrier to form a cavity in a surrounding mode. The resonator with the resonator structure can further reduce the leakage of boundary energy of the resonator, thereby further improving the Q value. While spurious modes of the resonator can be suppressed. Fig. 9 is a schematic diagram showing the frequency response curve of the resonator, and as shown in fig. 9, curve a is the frequency response curve of the resonator without the first bump in the first groove, and the S parameter is S (4, 3). Curve B is the frequency response curve of the resonator with the first bump in the first groove with S parameter S (6, 5). As can be seen from fig. 9, curve B is smoother than curve a. Therefore, the first bulge is arranged in the first groove, and the stray mode can be effectively inhibited.
With reference to fig. 10, an embodiment of the present invention provides a method for manufacturing a resonator structure, where a structure to be processed includes a bottom electrode layer, a top electrode layer, and a piezoelectric layer disposed between the bottom electrode layer and the top electrode layer; a method for making a resonator structure, comprising:
step S101, etching a bottom electrode layer to form a bottom electrode structure with a first groove; the bottom electrode structure exposes the piezoelectric layer.
Step S102, bonding a preset resonance carrier with the bottom electrode structure and the piezoelectric layer exposed outside the bottom electrode structure, so that the resonance carrier, the piezoelectric layer and the bottom electrode structure enclose to form a cavity, and the first groove is located in the cavity.
Step S103, etching the top electrode layer to form a top electrode structure.
By adopting the method for manufacturing the resonator structure provided by the embodiment of the application, the bottom electrode structure with the first groove is formed by etching the bottom electrode layer; the bottom electrode structure exposes the piezoelectric layer. And bonding a preset resonance carrier with the bottom electrode structure and the piezoelectric layer exposed outside the bottom electrode structure, so that the resonance carrier, the piezoelectric layer and the bottom electrode structure are enclosed to form a cavity, and the first groove is positioned in the cavity. And etching the top electrode layer to form a top electrode structure. In this way, the resonator having the resonator structure manufactured by the above method can improve the Q value of the resonator by using the bottom electrode structure with the first groove to participate in the enclosure to form the cavity.
Optionally, etching the bottom electrode layer to form a bottom electrode structure with a first groove, comprising: and etching the bottom electrode layer to expose the piezoelectric layer. And etching the etched bottom electrode layer to form a first groove. And depositing a first passivation layer on the bottom electrode layer with the first groove, and determining the bottom electrode layer with the first groove and the first passivation layer as a bottom electrode structure. Wherein the deposited first passivation layer has a seventh groove.
Optionally, etching the bottom electrode layer to form a bottom electrode structure with a first groove, comprising: and etching the bottom electrode layer to expose the piezoelectric layer. And etching the etched bottom electrode layer to form a first groove. And depositing a first passivation layer on the bottom electrode layer with the first groove. And etching the first passivation layer to form a seventh groove. The bottom electrode layer formed with the first groove and the first passivation layer formed with the seventh groove are determined as a bottom electrode structure.
Optionally, etching the bottom electrode layer to form a bottom electrode structure with a first groove, comprising: and etching the bottom electrode layer to expose the piezoelectric layer. And etching the etched bottom electrode layer to obtain a first etching part and a second etching part. A first metal layer is deposited on the first etching portion, and a second metal layer is deposited on the second etching portion. And taking the first metal layer, the second metal layer and the etched bottom electrode layer as a first metal electrode ring structure. And depositing a first passivation layer on the first metal electrode ring structure, and determining the first metal electrode ring structure and the first passivation layer as a bottom electrode structure.
Optionally, etching the top electrode layer to form a top electrode structure, including: a second passivation layer is deposited on a side of the top electrode layer remote from the piezoelectric layer. And etching the top electrode layer and the second passivation layer to expose the piezoelectric layer. And determining the top electrode layer and the second passivation layer after etching as a top electrode structure.
Optionally, etching the top electrode layer to form a top electrode structure, including: the top electrode layer is etched to expose the piezoelectric layer. And etching the etched top electrode layer to obtain a third etching part and a fourth etching part. And depositing a third metal layer on the third etching part and depositing a fourth metal layer on the fourth etching part. And taking the third metal layer, the fourth metal layer and the etched top electrode layer as a second metal electrode ring structure. And depositing a second passivation layer on the second metal electrode ring structure, and determining the second metal electrode ring structure and the second passivation layer as a top electrode structure.
In some embodiments, as shown in fig. 11 to 16, the predetermined resonant carrier includes: a substrate 5, a bonding layer 4, a high trapping layer 12 disposed between the substrate 5 and the bonding layer 4. Wherein the bonding layer 4 is defined as a hollow structure. The structure to be processed comprises a bottom electrode layer 2, a top electrode layer 3, a second passivation layer 9 arranged on the side of the top electrode layer 3 far away from the piezoelectric layer 1, and the piezoelectric layer 1 arranged between the bottom electrode layer 2 and the top electrode layer 3. The bottom electrode layer 2 is etched exposing the piezoelectric layer 1. And etching the etched bottom electrode layer 2 to obtain a first etching part and a second etching part. A first metal layer 13 is deposited on the first etched portion and a second metal layer 14 is deposited on the second etched portion. The first metal layer 13, the second metal layer 14 and the etched bottom electrode layer 2 are used as a first metal electrode ring structure. A first passivation layer 8 is deposited on the first metal electrode ring structure, defining the first metal electrode ring structure and the first passivation layer 8 as a bottom electrode structure. A predetermined resonant carrier is bonded to the bottom electrode structure and the piezoelectric layer 1 exposed outside the bottom electrode structure. The top electrode layer 3 and the second passivation layer 9 are then etched to expose the piezoelectric layer 1, and the top electrode layer 3 and the second passivation layer 9 after etching are determined as a top electrode structure. Thereby forming a complete resonator structure.
The above description and the drawings sufficiently illustrate embodiments of the invention to enable those skilled in the art to practice them. Other embodiments may incorporate structural, logical, electrical, process, and other changes. The examples merely typify possible variations. Individual components and functions are optional unless explicitly required, and the sequence of operations may vary. Portions and features of some embodiments may be included in or substituted for those of others. Furthermore, the words used in the specification are words of description only and are not intended to limit the claims. As used in the description of the embodiments and the claims, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. Similarly, the term "and/or" as used in this application is meant to encompass any and all possible combinations of one or more of the associated listed. Furthermore, the terms "comprises" and/or "comprising," when used in this application, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. Without further limitation, an element defined by the phrase "comprising a" \8230; "does not exclude the presence of additional like elements in a process, method or apparatus comprising the element. In this document, each embodiment may be described with emphasis on differences from other embodiments, and the same and similar parts between the respective embodiments may be referred to each other. For methods, products, etc. of the embodiment disclosures, reference may be made to the description of the method section for relevance if it corresponds to the method section of the embodiment disclosure.
Claims (10)
1. A resonator structure, comprising:
a top electrode structure;
a piezoelectric layer connecting the top electrode structure;
a bottom electrode structure located on a side of the piezoelectric layer away from the top electrode structure; the bottom electrode structure is connected with one end of the piezoelectric layer, so that the other end of the piezoelectric layer is exposed out of the bottom electrode structure; a first groove is formed in one side, away from the piezoelectric layer, of the bottom electrode structure;
a resonant carrier connecting the bottom electrode structure and a piezoelectric layer exposed outside the bottom electrode structure; the resonant carrier, the piezoelectric layer and the bottom electrode structure enclose to form a cavity, and the first groove is located in the cavity.
2. The resonator structure of claim 1, characterized in that the bottom electrode structure comprises:
the bottom electrode layer is connected with one end of the piezoelectric layer, so that the other end of the piezoelectric layer is exposed outside the bottom electrode layer; a first groove is formed in one side, away from the piezoelectric layer, of the bottom electrode layer;
and the first passivation layer is positioned on one side of the bottom electrode layer, which is far away from the piezoelectric layer, and is connected with the bottom electrode layer.
3. The resonator structure according to claim 1, characterized in that a first downward projection is provided in the first groove, the first projection dividing the first groove into a second groove and a third groove; the height of the first protrusion is smaller than that of the first groove.
4. The resonator structure of claim 1, wherein the top electrode structure comprises:
the top electrode layer is connected with one end of the piezoelectric layer, and the other end of the piezoelectric layer is exposed outside the top electrode layer;
and the second passivation layer is positioned on one side of the top electrode layer, which is far away from the piezoelectric layer, and is connected with the top electrode layer.
5. The resonator structure according to claim 4, characterized in that the side of the top electrode layer facing away from the piezoelectric layer is provided with a fourth recess.
6. The resonator structure according to claim 5, characterized in that an upwardly directed second protrusion is provided in the fourth groove, which second protrusion divides the fourth groove into a fifth groove and a sixth groove; the height of the second protrusion is smaller than the height of the fourth groove.
7. The resonator structure according to any of claims 1 to 6, characterized in that the resonant carrier comprises:
a substrate;
a bonding layer defined as a hollow structure; one side of the bonding layer is connected with the substrate, and the other side of the bonding layer is connected with the bottom electrode structure and the piezoelectric layer exposed outside the bottom electrode structure; and enabling the resonant carrier, the piezoelectric layer and the bottom electrode structure to enclose to form a cavity.
8. The resonator structure according to any of claims 1 to 6, characterized in that the resonant carrier comprises:
a substrate;
a high trapping layer disposed between the substrate and a bonding layer;
the bonding layer is defined into a hollow structure; one side of the bonding layer is connected with the high trapping layer, and the other side of the bonding layer is connected with the bottom electrode structure and the piezoelectric layer exposed outside the bottom electrode structure; and enabling the resonant carrier, the piezoelectric layer and the bottom electrode structure to enclose to form a cavity.
9. A method for making a resonator structure according to any of claims 1 to 8, the structure to be processed comprising a bottom electrode layer, a top electrode layer and a piezoelectric layer arranged between said bottom electrode layer and said top electrode layer; characterized in that the method comprises:
etching the bottom electrode layer to form a bottom electrode structure with a first groove; the bottom electrode structure exposes the piezoelectric layer;
bonding a preset resonance carrier with the bottom electrode structure and the piezoelectric layer exposed outside the bottom electrode structure, so that the resonance carrier, the piezoelectric layer and the bottom electrode structure enclose to form a cavity, and the first groove is positioned in the cavity;
and etching the top electrode layer to form a top electrode structure.
10. The method of claim 9, wherein etching the bottom electrode layer to form a bottom electrode structure with a first recess comprises:
etching the bottom electrode layer to expose the piezoelectric layer;
etching the etched bottom electrode layer to form a first groove;
and depositing a first passivation layer on the bottom electrode layer formed with the first groove, and determining the bottom electrode layer formed with the first groove and the first passivation layer as a bottom electrode structure.
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Application publication date: 20221021 |