CN115225058B - Resonant structure, method for producing a resonant structure - Google Patents
Resonant structure, method for producing a resonant structure Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The application relates to the technical field of resonators, and discloses a resonance structure, including: a piezoelectric layer located between the top electrode structure and the bottom electrode structure; a top electrode structure connected to the piezoelectric layer and exposing a portion of the piezoelectric layer outside the top electrode structure; a bottom electrode structure connected to the piezoelectric layer and exposing a portion of the piezoelectric layer outside the bottom electrode structure; a resonant carrier connecting the bottom electrode structure and the piezoelectric layer exposed outside the bottom electrode structure; enclosing the resonant carrier, the piezoelectric layer and the bottom electrode structure to form a cavity; no stacked structure exists outside the area where the cavity is located; the stacked structure is formed by mutually overlapping a bottom electrode structure, a resonance carrier, a top electrode structure and a piezoelectric layer. Thus, the bottom electrode structure, the resonance carrier, the top electrode structure and the piezoelectric layer are not overlapped outside the cavity region, so that the inner ripple of the filter passband with the resonance structure can be reduced, and the filter passband is flattened. The application also discloses a method for fabricating a resonant structure.
Description
Technical Field
The present application relates to the field of resonator technology, for example to a resonant structure, a method for manufacturing a resonant structure.
Background
At present, with the continuous development of science and technology, the application of the bulk acoustic wave resonator in life is more and more extensive. Fig. 1 is a schematic cross-sectional view of a first resonant structure. As shown in fig. 1, the resonant structure comprises a top electrode structure 2, a bottom electrode structure 3, a piezoelectric layer 1 and a resonant carrier 4. Wherein the piezoelectric layer 1 is located between the top electrode structure 2 and the bottom electrode structure 3. The top electrode structure 2 and the bottom electrode structure 3 both expose part of the piezoelectric layer 1, and the resonance carrier 4 connects the piezoelectric layer 1 exposed outside the bottom electrode structure 3 and the bottom electrode structure 3, so that the resonance carrier 4, the bottom electrode structure 3 and the piezoelectric layer 1 enclose to form a cavity. Outside the area where the cavity is located, there is a mutual overlap of the bottom electrode structure, the resonant carrier, the top electrode structure, the piezoelectric layer.
In the process of implementing the embodiments of the present disclosure, it is found that at least the following problems exist in the related art:
in the prior art, the resonator structure is located outside the area where the cavity is located, and a bottom electrode structure, a resonance carrier, a top electrode structure and a piezoelectric layer are overlapped. The wave band in the pass band of the filter with the resonance structure is large and uneven in the band.
Disclosure of Invention
The following presents a simplified summary in order to provide a basic understanding of some aspects of the disclosed embodiments. This summary is not an extensive overview nor is intended to identify key/critical elements or to delineate the scope of such embodiments but rather as a prelude to the more detailed description that is presented later.
The embodiment of the disclosure provides a resonance structure and a method for manufacturing the same, so that ripples in a pass band of a filter can be reduced, and the pass band is flat.
In some embodiments, the resonant structure comprises: a piezoelectric layer located between the top electrode structure and the bottom electrode structure; the top electrode structure is connected with the piezoelectric layer, and part of the piezoelectric layer is exposed out of the top electrode structure; the bottom electrode structure is connected with the piezoelectric layer, and part of the piezoelectric layer is exposed out of the bottom electrode structure; a resonant carrier connecting the bottom electrode structure and a piezoelectric layer exposed outside the bottom electrode structure; enclosing the resonant carrier, the piezoelectric layer and the bottom electrode structure to form a cavity; no stacked structure exists outside the area where the cavity is located; the stacked structure is formed by mutually overlapping a bottom electrode structure, a resonance carrier, a top electrode structure and a piezoelectric layer.
In some embodiments, the resonant carrier comprises: a substrate; a bonding layer defined as a hollow structure; one side of the bonding layer is connected with the substrate, and the other side of the bonding layer is connected with the bottom electrode structure and the piezoelectric layer exposed outside the bottom electrode structure; and enabling the resonant carrier, the piezoelectric layer and the bottom electrode structure to enclose to form a cavity.
In some embodiments, the resonant carrier comprises: a substrate; a high trapping layer disposed between the substrate and a bonding layer; the bonding layer is defined as a hollow structure; one side of the bonding layer is connected with the high trapping layer, and the other side of the bonding layer is connected with the bottom electrode structure and the piezoelectric layer exposed outside the bottom electrode structure; and enabling the resonant carrier, the piezoelectric layer and the bottom electrode structure to enclose to form a cavity.
In some embodiments, the top electrode structure comprises: a top electrode layer connected to the piezoelectric layer and exposing a portion of the piezoelectric layer outside the top electrode layer; the piezoelectric layer exposed outside the top electrode layer covers the bottom electrode connection area, and the area of the piezoelectric layer exposed outside the top electrode layer is larger than that of the bottom electrode connection area; the bottom electrode connecting area is an area where the bonding layer is contacted with the bottom electrode structure; and the first passivation layer is positioned on one side, far away from the piezoelectric layer, of the top electrode layer and is connected with the top electrode layer.
In some embodiments, the bottom electrode structure comprises: a bottom electrode layer connected to the piezoelectric layer and exposing a portion of the piezoelectric layer outside the bottom electrode layer; the piezoelectric layer exposed outside the bottom electrode layer covers the piezoelectric layer connecting area, and the area of the piezoelectric layer exposed outside the bottom electrode layer is larger than that of the piezoelectric layer connecting area; the piezoelectric layer connecting area is an area where the bonding layer is in contact with the piezoelectric layer; the second passivation layer is positioned on one side, far away from the piezoelectric layer, of the bottom electrode layer; the second passivation layer connects the bottom electrode layer and the resonant carrier.
In some embodiments, the resonant structure further comprises: a vent for maintaining air pressure balance of the cavity.
In some embodiments, the number of vent holes is greater than or equal to 2.
In some embodiments, the distance between each two of the vent holes is greater than a preset distance.
In some embodiments, a structure to be processed comprises a bottom electrode layer, a top electrode layer, and a piezoelectric layer disposed between the bottom electrode layer and the top electrode layer; the method for fabricating a resonant structure comprises: etching the bottom electrode layer to form a bottom electrode structure; the bottom electrode structure exposes the piezoelectric layer; etching the top electrode layer to form a top electrode structure; the top electrode structure exposes the piezoelectric layer; bonding a preset resonance carrier with the bottom electrode structure and the piezoelectric layer exposed outside the bottom electrode structure, so that the resonance carrier, the piezoelectric layer and the bottom electrode structure are enclosed to form a cavity. No stacked structure exists outside the area where the cavity is located; the stacked structure is formed by mutually overlapping a bottom electrode structure, a resonance carrier, a top electrode structure and a piezoelectric layer.
In some embodiments, after bonding the predetermined resonant carrier to the bottom electrode structure and the piezoelectric layer exposed outside the bottom electrode structure, the method further includes: a vent hole communicating with the cavity is formed.
The resonance structure provided by the embodiment of the disclosure can realize the following technical effects: the piezoelectric layer is positioned between the top electrode structure and the bottom electrode structure. The top electrode structure is coupled to the piezoelectric layer and exposes a portion of the piezoelectric layer outside the top electrode structure. And connecting the bottom electrode structure with the piezoelectric layer, and exposing part of the piezoelectric layer outside the bottom electrode structure. The resonance carrier is connected with the bottom electrode structure and the piezoelectric layer exposed outside the bottom electrode structure, so that the resonance carrier, the piezoelectric layer and the bottom electrode structure are enclosed to form a cavity. And no stacked structure exists outside the area of the cavity, and the stacked structure is formed by mutually overlapping a bottom electrode structure, a resonance carrier, a top electrode structure and a piezoelectric layer. Thus, the passband ripple of the filter is large due to the overlapping of the bottom electrode structure, the resonant carrier, the top electrode structure and the piezoelectric layer. The bottom electrode structure, the resonance carrier, the top electrode structure and the piezoelectric layer do not exist in the resonance structure outside the cavity region, so that the inner ripple of the filter passband with the resonance structure can be reduced, and the filter passband is smooth.
The foregoing general description and the following description are exemplary and explanatory only and are not restrictive of the application.
Drawings
One or more embodiments are illustrated by way of example in the accompanying drawings, which correspond to the accompanying drawings and not in limitation thereof, in which elements having the same reference numeral designations are shown as like elements and not in limitation thereof, and wherein:
fig. 1 is a schematic cross-sectional structure diagram of a first resonant structure provided in an embodiment of the present disclosure;
FIG. 2 is a schematic cross-sectional view of a second resonant structure provided in an embodiment of the present disclosure
FIG. 3 is an impedance plot illustration of a first resonator provided by embodiments of the present disclosure;
FIG. 4 is a graphical illustration of the impedance of a second resonator provided by embodiments of the present disclosure;
FIG. 5 is a schematic Smith chart diagram of a first resonator provided by embodiments of the disclosure;
FIG. 6 is a Smith chart of a second resonator according to an embodiment of the disclosure
FIG. 7 is a schematic diagram of a frequency response curve of a filter provided by an embodiment of the present disclosure;
FIG. 8 is a top view of a resonant structure with two release holes according to an embodiment of the present invention;
fig. 9 is a schematic diagram of a method for fabricating a resonant structure according to an embodiment of the present invention.
Reference numerals:
1: a piezoelectric layer; 2: a top electrode structure; 3: a bottom electrode structure; 4: a resonant carrier; 5: a substrate; 6: a bonding layer; 7: a first passivation layer; 8: a top electrode layer; 9: a bottom electrode layer; 10: a second passivation layer; 11: a vent hole; 12: a cavity region.
Detailed Description
So that the manner in which the features and advantages of the embodiments of the present disclosure can be understood in detail, a more particular description of the embodiments of the disclosure, briefly summarized above, may be had by reference to the appended drawings, which are included to illustrate, but are not intended to limit the embodiments of the disclosure. In the following description of the technology, for purposes of explanation, numerous details are set forth in order to provide a thorough understanding of the disclosed embodiments. However, one or more embodiments may be practiced without these details. In other instances, well-known structures and devices may be shown in simplified form in order to simplify the drawing.
The terms "first," "second," and the like in the description and claims of the embodiments of the disclosure and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It should be understood that the data so used may be interchanged as appropriate for the embodiments of the disclosure described herein. Furthermore, the terms "comprising" and "having," as well as any variations thereof, are intended to cover non-exclusive inclusions.
In the embodiments of the present disclosure, the terms "upper", "lower", "inner", "middle", "outer", "front", "rear", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings. These terms are used primarily to better describe the disclosed embodiments and their examples and are not intended to limit the indicated devices, elements or components to a particular orientation or to be constructed and operated in a particular orientation. Moreover, some of the above terms may be used to indicate other meanings besides the orientation or positional relationship, for example, the term "on" may also be used to indicate some kind of attachment or connection relationship in some cases. The specific meanings of these terms in the embodiments of the present disclosure can be understood by those of ordinary skill in the art as appropriate.
In addition, the terms "disposed," "connected," and "secured" are to be construed broadly. For example, "connected" may be a fixed connection, a detachable connection, or a unitary construction; can be a mechanical connection, or an electrical connection; may be directly connected, or indirectly connected through intervening media, or may be in internal communication between two devices, elements or components. Specific meanings of the above terms in the embodiments of the present disclosure can be understood by those of ordinary skill in the art according to specific situations.
The term "plurality" means two or more unless otherwise specified.
In the embodiment of the present disclosure, the character "/" indicates that the preceding and following objects are in an or relationship. For example, A/B represents: a or B.
The term "and/or" is an associative relationship that describes objects, meaning that three relationships may exist. For example, a and/or B, represents: a or B, or A and B.
It should be noted that, in the case of no conflict, the embodiments and features in the embodiments of the present disclosure may be combined with each other.
As shown in fig. 2, an embodiment of the present disclosure provides a resonant structure, including: a piezoelectric layer 1, a top electrode structure 2, a bottom electrode structure 3 and a resonant carrier 4. A piezoelectric layer 1 located between the top electrode structure 2 and the bottom electrode structure 3; a top electrode structure 2 connected to the piezoelectric layer 1 and exposing a portion of the piezoelectric layer 1 outside the top electrode structure 2; a bottom electrode structure 3 connected to the piezoelectric layer 1 and exposing a portion of the piezoelectric layer 1 outside the bottom electrode structure 3; a resonant carrier 4 connecting the bottom electrode structure 3 and the piezoelectric layer 1 exposed outside the bottom electrode structure 3; the resonant carrier 4, the piezoelectric layer 1 and the bottom electrode structure 3 are enclosed to form a cavity; no stacked structure exists outside the area where the cavity is located; the stacked structure is that the bottom electrode structure 3, the resonance carrier 4, the top electrode structure 2 and the piezoelectric layer 1 are mutually overlapped.
With the resonant structure provided by the embodiments of the present disclosure, the piezoelectric layer is located between the top electrode structure and the bottom electrode structure. The top electrode structure is coupled to the piezoelectric layer and exposes a portion of the piezoelectric layer outside the top electrode structure. And connecting the bottom electrode structure with the piezoelectric layer, and exposing part of the piezoelectric layer outside the bottom electrode structure. The resonance carrier is connected with the bottom electrode structure and the piezoelectric layer exposed outside the bottom electrode structure, so that the resonance carrier, the piezoelectric layer and the bottom electrode structure are enclosed to form a cavity. And no stacked structure exists outside the area of the cavity, and the stacked structure is formed by mutually overlapping a bottom electrode structure, a resonant carrier, a top electrode structure and a piezoelectric layer. Thus, the passband ripple of the filter is large due to the overlapping of the bottom electrode structure, the resonant carrier, the top electrode structure and the piezoelectric layer. The bottom electrode structure, the resonance carrier, the top electrode structure and the piezoelectric layer do not exist in the resonance structure outside the cavity region, so that the inner ripple of the filter passband with the resonance structure can be reduced, and the filter passband is smooth.
Optionally, the piezoelectric layer is made of AlN nitride, znO, liNbO 3 Lithium tantalate LiTaO 3 Lead zirconate titanate (PZT), barium Strontium Titanate (BST), and the like.
Optionally, the piezoelectric layer is made of aluminum nitride AlN doped with a rare earth element in a proportion of 5-30%. Optionally, the rare earth elements include: scandium, erbium, lanthanum and the like. For example: the piezoelectric layer is made of aluminum nitride or aluminum nitride doped with scandium in a proportion of 10%.
In some embodiments, the piezoelectric layer is made of scandium-doped zinc oxide ZnO, scandium-doped lithium niobate LiNbO3, scandium-doped lithium tantalate 3, scandium-doped aluminum nitride AlN or scandium-doped aluminum scandium nitride AlScN.
As shown in connection with fig. 2, optionally, the resonant carrier 4 comprises: a substrate 5 and a bonding layer 6. A substrate 5, a bonding layer 6; a bonding layer 6 defined as a hollow structure; one side of the bonding layer 6 is connected with the substrate 5, and the other side of the bonding layer 6 is connected with the bottom electrode structure 3 and the piezoelectric layer 1 exposed outside the bottom electrode structure 3, so that the resonant carrier 4, the piezoelectric layer 1 and the bottom electrode structure 3 are enclosed to form a cavity.
Further, the substrate is made of silicon.
Further, the bonding layer is made of one or more of silicon dioxide, silicon nitride, organic film materials and ethyl silicate.
Optionally, the top electrode structure 2, comprises: a top electrode layer 8 and a first passivation layer 7. And the top electrode layer 8 is connected with the piezoelectric layer 1, and part of the piezoelectric layer 1 is exposed out of the top electrode layer 8. The piezoelectric layer 1 exposed outside the top electrode layer 8 covers the bottom electrode connection area, and the area of the piezoelectric layer 1 exposed outside the top electrode layer 8 is larger than the area of the bottom electrode connection area. The bottom electrode connection region is a region where the bonding layer 6 and the bottom electrode structure 3 are in contact. A first passivation layer 7 is located on the side of the top electrode layer 8 remote from the piezoelectric layer 1 and connected to the top electrode layer 8.
Further, the top electrode layer is made of one or more of metal materials with conductive performance such as molybdenum Mo, aluminum Al, gold Au, copper Cu, platinum Pt, tantalum Ta, tungsten W, palladium Pd and ruthenium Ru.
Further, the first passivation layer is made of silicon nitride SiN, aluminum nitride AlN and silicon dioxide SiO 2 And silicon oxynitride SiNO.
Optionally, the bottom electrode structure 3 comprises: a bottom electrode layer 9 and a second passivation layer 10. And the bottom electrode layer 9 is connected with the piezoelectric layer 1, and part of the piezoelectric layer 1 is exposed out of the bottom electrode layer 9. The piezoelectric layer 1 exposed outside the bottom electrode layer 9 covers the connection area of the piezoelectric layer 1, and the area of the piezoelectric layer 1 exposed outside the bottom electrode layer 9 is larger than the area of the connection area of the piezoelectric layer 1. The area where the piezoelectric layer 1 is connected is the area where the bonding layer 6 is in contact with the piezoelectric layer 1. And a second passivation layer 10 positioned on the side of the bottom electrode layer 9 away from the piezoelectric layer 1, the second passivation layer 10 connecting the bottom electrode layer 9 and the resonant carrier 4. Therefore, the substrate, the bonding layer, the top electrode layer, the first passivation layer, the bottom electrode layer and the second passivation layer jointly form a resonance structure, and the resonance structure does not have the bottom electrode structure, the resonance carrier, the top electrode structure and the piezoelectric layer which are mutually overlapped outside the cavity region. The impedance diagram of the resonator having the resonant structure is shown in fig. 3, and the Z parameter of the frequency response curve in fig. 3 is Z (2,2). It can be seen that the lines in fig. 3 are smooth and have no spikes, i.e. there are no spurious modes in the resonator with this resonant structure. The impedance diagram of the resonator without the resonant structure is shown in fig. 4, and the Z parameter of the frequency response curve in fig. 4 is Z (1,1). It can be seen that the lines in fig. 4 have sharp spikes, i.e. there are spurious modes in the resonator without this resonant structure. A Smith chart (Smith chart) of a resonator having the resonance structure is shown in fig. 5. The frequency response curve of FIG. 5 from frequency 2.000GHz to frequency 3.000GHz with the S parameter S (2,2). It can be seen from fig. 5 that the resonator with this resonant structure has no spurious modes. The smith chart of a resonator without this resonant structure is shown in figure 6. The frequency response curve of frequency 2.000GHz to frequency 3.000GHz in FIG. 6 has an S parameter of S (1,1). It can be seen from fig. 6 that there are spurious modes in the resonator without this resonant structure. Referring to fig. 7, fig. 7 is a schematic diagram of a frequency response curve of the filter. As shown in fig. 7, curve a is the frequency response curve of the filter having the above resonant structure, and the S parameter is S (4,3). Curve B is the frequency response curve of a filter without the resonant structure described above, with S parameter S (6,5). As can be seen from fig. 7, the filter with the above-described resonant structure has a smooth and ripple-free frequency response band. Filters without the above-described resonant structure have significant ripple in the frequency response band.
Further, the bottom electrode layer is made of one or more of metal materials with conductive performance such as molybdenum Mo, aluminum Al, gold Au, copper Cu, platinum Pt, tantalum Ta, tungsten W, palladium Pd and ruthenium Ru.
Further, the second passivation layer is made of silicon nitride SiN, aluminum nitride AlN and silicon dioxideSiO 2 And silicon oxynitride SiNO.
Optionally, the resonant carrier comprises: the substrate, the high trapping layer and the bonding layer. The high-trapping layer is arranged between the substrate and the bonding layer; a bonding layer defined as a hollow structure; one side of the bonding layer is connected with the high trapping layer, and the other side of the bonding layer is connected with the bottom electrode structure and the piezoelectric layer exposed outside the bottom electrode structure; and the resonant carrier, the piezoelectric layer and the bottom electrode structure are enclosed to form a cavity. Thus, the high trapping layer of the resonator carrier is involved in the enclosure to form a cavity, and the Q value of the resonator can be further increased.
Further, the high trapping layer is made of polycrystalline silicon and/or amorphous silicon α -Si.
In some embodiments, the resonant carrier comprises: the device comprises a substrate, a bonding layer and a high trapping layer. A top electrode structure comprising: a top electrode layer and a first passivation layer. A bottom electrode structure comprising: a bottom electrode layer and a second passivation layer. Wherein the high-trapping layer is disposed between the substrate and the bonding layer. The bonding layer is defined as a hollow structure. And one side of the bonding layer is connected with the high trapping layer, and the other side of the bonding layer is connected with the second passivation layer and the piezoelectric layer exposed outside the bottom electrode structure, so that the resonant carrier, the piezoelectric layer, the bottom electrode layer and the second passivation layer are enclosed to form a cavity. The bottom electrode layer is connected to the piezoelectric layer and exposes a portion of the piezoelectric layer outside the bottom electrode layer. The piezoelectric layer exposed outside the bottom electrode layer covers the piezoelectric layer connection region, and the area of the piezoelectric layer exposed outside the bottom electrode layer is larger than that of the piezoelectric layer connection region. The piezoelectric layer connecting region is a region where the bonding layer is in contact with the piezoelectric layer. The second passivation layer is located on one side, far away from the piezoelectric layer, of the bottom electrode layer and is connected with the bottom electrode layer and the bonding layer. The top electrode layer is coupled to the piezoelectric layer and exposes a portion of the piezoelectric layer outside the top electrode layer. The piezoelectric layer exposed outside the top electrode layer covers the bottom electrode connection area, and the area of the piezoelectric layer exposed outside the top electrode layer is larger than that of the bottom electrode connection area. The bottom electrode connecting area is an area where the bonding layer is contacted with the bottom electrode structure. The first passivation layer is located on one side, far away from the piezoelectric layer, of the top electrode layer and connected with the top electrode layer. Thus, the passband ripple of the filter is large due to the overlapping of the bottom electrode structure, the resonant carrier, the top electrode structure and the piezoelectric layer. The bottom electrode structure, the resonance carrier, the top electrode structure and the piezoelectric layer are not overlapped outside the cavity region, so that the ripple in the pass band of the filter can be reduced, and the pass band is smooth. The Q value of the resonator can be improved by arranging the high trapping layer, so that the Q value of the resonator can be improved while the ripple in the pass band of the filter is reduced.
Optionally, the resonant structure further comprises: and the vent hole is used for maintaining the air pressure balance of the cavity.
Optionally, the number of vent holes is greater than or equal to 2.
Optionally, the distance between each two of the vent holes is greater than a preset distance. The preset distance is 1/3 of the perimeter of a polygonal area formed by overlapping the top electrode layer and the bottom electrode layer. I.e. 1/3 of the circumference of the active area of the resonator.
In some embodiments, as shown in connection with FIG. 8, FIG. 8 is a top view of a resonant structure with two vent holes. As shown in fig. 8, two vent holes 11 each penetrate the top electrode layer 8, the piezoelectric layer 1, and the bottom electrode layer 9. The location where the bonding layer, the piezoelectric layer, the bottom electrode layer and the substrate enclose a cavity is referred to as a cavity area 12. Both vents 11 are located in the cavity area 12.
Optionally, a vent hole is provided on the piezoelectric layer.
Optionally, a top electrode structure, comprising: a top electrode layer and a first passivation layer. A top electrode layer connected to the piezoelectric layer; the top electrode layer is provided with a first etching region and a second etching region. The first etched area and the second etched area both expose the piezoelectric layer. The first etching area covers the area where the vent hole is located, and the area of the first etching area is larger than that of the area where the vent hole is located. The second etching region covers the bottom electrode connection region. The area of the second etching region is larger than that of the bottom electrode connection region. The bottom electrode connecting area is an area where the bonding layer is contacted with the bottom electrode structure. And the first passivation layer is positioned on one side of the top electrode layer, which is far away from the piezoelectric layer, and is connected with the top electrode layer.
In some embodiments, the first etching region and the region where the vent hole is located are both circular in shape. The boundary of the first etching area does not overlap with the boundary of the area where the vent hole is located, and the aperture of the first etching area minus the aperture of the area where the vent hole is located is greater than or equal to 8 microns.
Optionally, a bottom electrode structure, comprising: a bottom electrode layer and a second passivation layer. A bottom electrode layer connected to the piezoelectric layer; the bottom electrode layer is provided with a third etching area. The third etched area covers the piezoelectric layer connecting area and the vent hole area. The area of the third etch zone is greater than the total zone area. The total area of the regions is the sum of the areas of the piezoelectric layer connecting regions and the regions where the vent holes are located. The piezoelectric layer connecting region is a region where the bonding layer is in contact with the piezoelectric layer. The second passivation layer is positioned on one side, far away from the piezoelectric layer, of the bottom electrode layer; the second passivation layer is connected with the bottom electrode layer and the resonance carrier.
In some embodiments, the third etched area and the area where the vent is located are both circular in shape. The boundary of the third etching area does not overlap with the boundary of the area where the vent hole is located, and the aperture of the third etching area minus the aperture of the area where the vent hole is located is greater than or equal to 8 micrometers.
Optionally, the resonant carrier comprises: a substrate and a bonding layer. And the substrate is connected with the bonding layer. A bonding layer defined as a hollow structure; one side of the bonding layer is connected with the substrate, and the other side of the bonding layer is connected with the bottom electrode layer and the piezoelectric layer exposed outside the bottom electrode layer; the resonant carrier, the piezoelectric layer and the bottom electrode structure are enclosed to form a cavity, and no stacked structure exists outside the area where the cavity is located. And the area of the cavity formed by the bonding layer and the bottom electrode layer in a surrounding way covers the preset area to be etched on the piezoelectric layer, and the area of the cavity formed by the bonding layer and the bottom electrode layer in a surrounding way is larger than that of the area to be etched.
In the related art, after the resonator is fabricated, the top electrode layer, the piezoelectric layer, and the bottom electrode layer are punched, thereby forming a release hole or a vent hole. Since the perforation is made directly through the three layers of the top electrode layer, the piezoelectric layer, and the bottom electrode layer, the edges of the top electrode layer, the piezoelectric layer, and the bottom electrode layer where the release hole is located are nearly flush. At this time, since the edges of the top electrode layer, the piezoelectric layer, and the bottom electrode layer at the position of the release hole are nearly flush, the failure mode of ESD may be at the edges of the position of the piezoelectric layer at the position of the release hole. In the process of punching, the edges of the top electrode layer and the bottom electrode layer at the position of the release hole may be damaged, so that the edges of the top electrode layer and the piezoelectric layer at the position of the release hole are not smooth. At this time, when a high voltage is applied to the bottom electrode layer and the top electrode layer, electric charges are accumulated at the position of the discharge hole, and ESD discharge is easily formed at the position of the discharge hole, thereby causing a decrease in ESD capability. Thus, the resonant structure is formed by the top electrode layer provided with the first etching area and the second etching area, the first passivation layer, the bottom electrode layer provided with the third etching area, the second passivation layer, the substrate, the bonding layer and the piezoelectric layer. The formation of the resonant structure requires that the opening be avoided during the fabrication process. Because when punching, the trompil is dodged, only punches to the piezoelectric layer, can not make the edge of top electrode layer and piezoelectric layer not smooth. When a high voltage is applied to the bottom electrode layer and the top electrode layer, the ESD capability of the resonator is not reduced, and the ESD capability of the manufactured resonator can be improved. Meanwhile, after the opening is made to avoid, the edges of the piezoelectric layer, the top electrode layer and the bottom electrode layer, which are located at the position of the release hole, are not flush, so that the piezoelectric layer needs to be broken down when high voltage is applied. And because the breakdown has an edge effect, the edge effect can be reduced after the open pore is avoided, and the reduction of the ESD capability of the resonator can also be reduced. Meanwhile, the bottom electrode structure, the resonance carrier, the top electrode structure and the piezoelectric layer do not overlap outside the cavity region of the resonance structure. The filter with the resonance structure can improve the ESD capability and simultaneously flatten the pass band of the filter.
With reference to fig. 9, an embodiment of the present disclosure provides a method for manufacturing the resonator structure, where the structure to be processed includes a bottom electrode layer, a top electrode layer, and a piezoelectric layer disposed between the bottom electrode layer and the top electrode layer; the method for making a resonant structure comprises:
step S101, etching the bottom electrode layer to form a bottom electrode structure; the bottom electrode structure exposes the piezoelectric layer.
Step S102, etching the top electrode layer to form a top electrode structure; the top electrode structure exposes the piezoelectric layer.
Step S103, bonding a preset resonance carrier with a bottom electrode structure and a piezoelectric layer exposed outside the bottom electrode structure, so that the resonance carrier, the piezoelectric layer and the bottom electrode structure are enclosed to form a cavity; no stacked structure exists outside the area where the cavity is located; the stacked structure is formed by mutually overlapping a bottom electrode structure, a resonance carrier, a top electrode structure and a piezoelectric layer.
By adopting the method for manufacturing the resonator structure, the bottom electrode layer is etched to form the bottom electrode structure; the bottom electrode structure exposes the piezoelectric layer. Etching the top electrode layer to form a top electrode structure; the top electrode structure exposes the piezoelectric layer. Bonding a preset resonance carrier with the bottom electrode structure and the piezoelectric layer exposed outside the bottom electrode structure, so that the resonance carrier, the piezoelectric layer and the bottom electrode structure are enclosed to form a cavity; no stacked structure exists outside the area where the cavity is located; the stacked structure is formed by mutually overlapping a bottom electrode structure, a resonance carrier, a top electrode structure and a piezoelectric layer. The resonant structure manufactured by the method does not have a stacked structure outside the area where the cavity is located. The filter with the resonance structure has less ripples in a passband and is flat in the passband.
Optionally, the preset resonant carrier comprises: a substrate and a bonding layer; the bonding layer is defined as a hollow structure, and the bonding layer is connected with the substrate. Bonding a predetermined resonant carrier with the bottom electrode structure and the piezoelectric layer exposed outside the bottom electrode structure, comprising: and bonding the bonding layer with the bottom electrode structure and the piezoelectric layer exposed outside the bottom electrode structure.
Optionally, the preset resonant carrier comprises: the device comprises a substrate, a high trapping layer and a bonding layer; the high-trapping layer is arranged between the substrate and the bonding layer; a bonding layer defined as a hollow structure; one side of the high-trapping layer is connected with the bonding layer, and the other side of the high-trapping layer is connected with the substrate. Bonding a predetermined resonant carrier with the bottom electrode structure and the piezoelectric layer exposed outside the bottom electrode structure, comprising: and bonding the bonding layer with the bottom electrode structure and the piezoelectric layer exposed outside the bottom electrode structure.
Optionally, etching the bottom electrode layer to form a bottom electrode structure, including: etching the bottom electrode layer to expose part of the piezoelectric layer; the piezoelectric layer exposed outside the bottom electrode layer covers the piezoelectric layer connecting area, and the area of the piezoelectric layer exposed outside the bottom electrode layer is larger than that of the piezoelectric layer connecting area; the piezoelectric layer connecting region is a region where the bonding layer is in contact with the piezoelectric layer. And depositing a second passivation layer on the bottom electrode layer, and determining the etched bottom electrode layer and the second passivation layer as a bottom electrode structure.
Optionally, etching the top electrode layer to form a top electrode structure, including: etching the top electrode layer to expose part of the piezoelectric layer; the piezoelectric layer exposed outside the top electrode layer covers the bottom electrode connection area, and the area of the piezoelectric layer exposed outside the top electrode layer is larger than that of the bottom electrode connection area; the bottom electrode connecting area is an area where the bonding layer is contacted with the bottom electrode structure. And depositing a first passivation layer on the top electrode layer, and determining the top electrode layer and the first passivation layer after etching as a top electrode structure.
Optionally, a vent forming a communication cavity, comprising: and etching the second passivation layer, the top electrode layer and the piezoelectric layer to form a vent hole communicated with the cavity.
In some embodiments, the area to be etched is provided on a side of the piezoelectric layer adjacent to the bottom electrode layer, and the area to be etched is also provided on a side of the piezoelectric layer adjacent to the top electrode layer. The areas to be etched on the two sides of the piezoelectric layer are oppositely arranged, and the shapes and the areas are equal. And etching the area to be etched, which is oppositely arranged on the piezoelectric layer, to form the vent hole. The first area to be processed covers a preset area to be etched on the piezoelectric layer, namely the first area to be processed covers the area to be etched on one side of the piezoelectric layer close to the bottom electrode layer. The third area to be processed covers a preset area to be etched on the piezoelectric layer, namely the third area to be processed covers the area to be etched on one side of the piezoelectric layer close to the top electrode layer.
Optionally, etching the bottom electrode layer to form a bottom electrode structure, including: and etching the first to-be-processed area and the second to-be-processed area on the bottom electrode layer to expose the piezoelectric layer. The first area to be processed covers a preset area to be etched on the piezoelectric layer, and the area of the first area to be processed is larger than that of the area to be etched. The second to-be-processed area covers the piezoelectric layer connection area, and the area of the second to-be-processed area is larger than that of the piezoelectric layer connection area; the piezoelectric layer connecting region is a region where the bonding layer is in contact with the piezoelectric layer.
Optionally, etching the top electrode layer to form a top electrode structure, including: and etching the third to-be-processed area and the fourth to-be-processed area on the top electrode layer to expose the piezoelectric layer. The third area to be processed covers a preset area to be etched on the piezoelectric layer, and the area of the third area to be processed is larger than that of the area to be etched. The fourth to-be-processed area covers the bottom electrode connecting area, and the area of the fourth to-be-processed area is larger than that of the bottom electrode connecting area; the bottom electrode connecting area is an area where the bonding layer is contacted with the bottom electrode structure.
Optionally, a vent forming a communication cavity, comprising: and etching the area to be etched to form a vent hole communicated with the cavity. Therefore, the second to-be-processed area and the fourth to-be-processed area are etched, and a stack structure does not exist outside the area where the finally manufactured resonant structure cavity is located. And meanwhile, avoiding the position of the release hole to be manufactured when the bottom electrode layer and the top electrode layer are etched. When punching, only the piezoelectric layer needs to be punched, and the edges of the top electrode layer and the piezoelectric layer cannot be unsmooth. When a high voltage is applied to the bottom electrode layer and the top electrode layer, the ESD capability of the resonator is not reduced, and the ESD capability of the manufactured resonator can be improved. And because the opening is made to avoid, the edges of the piezoelectric layer, the top electrode layer and the bottom electrode layer which are positioned at the position of the release hole are not flush, so that when high voltage is applied, the piezoelectric layer needs to be broken down when ESD fails, and the ESD capacity of the resonator can be improved. Therefore, the filter with the resonance structure manufactured by the method has high ESD capacity, less ripples in a pass band and flatness in the pass band.
The above description and drawings sufficiently illustrate embodiments of the disclosure to enable those skilled in the art to practice them. Other embodiments may include structural and other changes. The examples merely typify possible variations. Individual components and functions are optional unless explicitly required, and the sequence of operations may vary. Portions and features of some embodiments may be included in or substituted for those of others. The embodiments of the present disclosure are not limited to the structures that have been described above and illustrated in the drawings, and various modifications and changes can be made without departing from the scope thereof. The scope of the present disclosure is limited only by the appended claims.
Claims (7)
1. A resonant structure, characterized in that a structure to be processed comprises a bottom electrode layer, a top electrode layer and a piezoelectric layer arranged between the bottom electrode layer and the top electrode layer; the resonant structure includes:
a piezoelectric layer located between the top electrode structure and the bottom electrode structure;
the top electrode structure is connected with the piezoelectric layer, and part of the piezoelectric layer is exposed out of the top electrode structure;
the bottom electrode structure is connected with the piezoelectric layer, and part of the piezoelectric layer is exposed out of the bottom electrode structure;
a resonant carrier connecting the bottom electrode structure and a piezoelectric layer exposed outside the bottom electrode structure; enclosing the resonant carrier, the piezoelectric layer and the bottom electrode structure to form a cavity; no stacked structure exists outside the area where the cavity is located; the stacking structure is formed by mutually overlapping a bottom electrode structure, a resonance carrier, a top electrode structure and a piezoelectric layer;
the resonant carrier includes: a substrate; a bonding layer defined as a hollow structure; one side of the bonding layer is connected with the substrate, and the other side of the bonding layer is connected with the bottom electrode structure and the piezoelectric layer exposed outside the bottom electrode structure; enclosing the resonant carrier, the piezoelectric layer and the bottom electrode structure to form a cavity;
the resonant structure further comprises: a vent for maintaining air pressure balance of the cavity;
the bottom electrode structure is formed by: etching a first area to be processed and a second area to be processed on the bottom electrode layer to expose the piezoelectric layer; the first area to be processed covers a preset area to be etched on the piezoelectric layer, and the area of the first area to be processed is larger than that of the area to be etched; the second to-be-processed area covers the piezoelectric layer connecting area, and the area of the second to-be-processed area is larger than that of the piezoelectric layer connecting area; the piezoelectric layer connection region is a region where the bonding layer is in contact with the piezoelectric layer;
the top electrode structure is formed by: etching a third area to be processed and a fourth area to be processed on the top electrode layer to expose the piezoelectric layer; the third area to be processed covers a preset area to be etched on the piezoelectric layer, and the area of the third area to be processed is larger than that of the area to be etched; the fourth to-be-processed area covers the bottom electrode connecting area, and the area of the fourth to-be-processed area is larger than that of the bottom electrode connecting area; the bottom electrode connecting area is an area where the bonding layer is contacted with the bottom electrode structure;
the vent hole is formed by the following method: and etching the area to be etched to form a vent hole communicated with the cavity.
2. The resonant structure of claim 1, wherein the resonant carrier further comprises:
a high trapping layer disposed between the substrate and a bonding layer; one side of the bonding layer is connected with the high-capture layer.
3. The resonant structure according to any one of claims 1 or 2, wherein the top electrode structure comprises:
a top electrode layer connected to the piezoelectric layer and exposing a portion of the piezoelectric layer outside the top electrode layer; the piezoelectric layer exposed outside the top electrode layer covers the bottom electrode connection area, and the area of the piezoelectric layer exposed outside the top electrode layer is larger than that of the bottom electrode connection area; the bottom electrode connecting area is an area where the bonding layer is contacted with the bottom electrode structure;
and the first passivation layer is positioned on one side of the top electrode layer, which is far away from the piezoelectric layer, and is connected with the top electrode layer.
4. The resonant structure according to any of claims 1 or 2, wherein the bottom electrode structure comprises:
a bottom electrode layer connected to the piezoelectric layer and exposing a portion of the piezoelectric layer outside the bottom electrode layer; the piezoelectric layer exposed outside the bottom electrode layer covers the piezoelectric layer connecting area, and the area of the piezoelectric layer exposed outside the bottom electrode layer is larger than that of the piezoelectric layer connecting area; the piezoelectric layer connecting area is an area where the bonding layer is in contact with the piezoelectric layer;
the second passivation layer is positioned on one side, far away from the piezoelectric layer, of the bottom electrode layer; the second passivation layer is connected with the bottom electrode layer and the resonance carrier.
5. The resonant structure of claim 1, wherein the number of vent holes is greater than or equal to 2.
6. The resonant structure of claim 5, wherein the distance between each two of the vent holes is greater than a predetermined distance.
7. A method for making a resonant structure according to any one of claims 1 to 6, the structure to be processed comprising a bottom electrode layer, a top electrode layer and a piezoelectric layer disposed between said bottom electrode layer and said top electrode layer; characterized in that the method comprises:
etching the bottom electrode layer to form a bottom electrode structure; the bottom electrode structure exposes the piezoelectric layer;
etching the top electrode layer to form a top electrode structure; the top electrode structure exposes the piezoelectric layer;
bonding a preset resonance carrier with the bottom electrode structure and a piezoelectric layer exposed outside the bottom electrode structure, so that the resonance carrier, the piezoelectric layer and the bottom electrode structure enclose to form a cavity; no stacked structure exists outside the area where the cavity is located; the stacking structure is formed by mutually overlapping a bottom electrode structure, a resonance carrier, a top electrode structure and a piezoelectric layer;
after bonding a preset resonance carrier with the bottom electrode structure and the piezoelectric layer exposed outside the bottom electrode structure, the method further comprises the following steps: a vent hole communicated with the cavity is formed;
the resonant carrier includes: a substrate; a bonding layer defined as a hollow structure; one side of the bonding layer is connected with the substrate, and the other side of the bonding layer is connected with the bottom electrode structure and the piezoelectric layer exposed outside the bottom electrode structure;
etching the bottom electrode layer to form a bottom electrode structure, comprising: etching a first area to be processed and a second area to be processed on the bottom electrode layer to expose the piezoelectric layer; the first area to be processed covers a preset area to be etched on the piezoelectric layer, and the area of the first area to be processed is larger than that of the area to be etched; the second to-be-processed area covers the piezoelectric layer connecting area, and the area of the second to-be-processed area is larger than that of the piezoelectric layer connecting area; the piezoelectric layer connecting area is an area where the bonding layer is contacted with the piezoelectric layer;
etching the top electrode layer to form a top electrode structure, comprising: etching a third area to be processed and a fourth area to be processed on the top electrode layer to expose the piezoelectric layer; the third to-be-processed area covers a preset to-be-etched area on the piezoelectric layer, and the area of the third to-be-processed area is larger than that of the to-be-etched area; the fourth to-be-processed region covers the bottom electrode connection region, and the area of the fourth to-be-processed region is larger than that of the bottom electrode connection region; the bottom electrode connecting area is an area where the bonding layer is contacted with the bottom electrode structure;
a vent forming a communicating cavity, comprising: and etching the area to be etched to form a vent hole communicated with the cavity.
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