CN114257192A - Method for manufacturing film bulk acoustic resonator and filter - Google Patents
Method for manufacturing film bulk acoustic resonator and filter Download PDFInfo
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- CN114257192A CN114257192A CN202010995761.0A CN202010995761A CN114257192A CN 114257192 A CN114257192 A CN 114257192A CN 202010995761 A CN202010995761 A CN 202010995761A CN 114257192 A CN114257192 A CN 114257192A
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Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02157—Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
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- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/205—Constructional features of resonators consisting of piezoelectric or electrostrictive material having multiple resonators
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
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- H—ELECTRICITY
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- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
- H03H9/586—Means for mounting to a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/588—Membranes
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- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/028—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired values of other parameters
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- H03H9/02—Details
- H03H2009/02165—Tuning
- H03H2009/02173—Tuning of film bulk acoustic resonators [FBAR]
- H03H2009/02188—Electrically tuning
- H03H2009/02196—Electrically tuning operating on the FBAR element, e.g. by direct application of a tuning DC voltage
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention relates to a method for manufacturing a film bulk acoustic resonator and a filter, comprising the following steps: forming a first electrode, a piezoelectric layer, and a second electrode; forming an annular groove penetrating through the corresponding electrode on at least one of the first electrode and the second electrode; forming an electrode lead-out structure having an arch bridge on the electrode having the annular groove; forming a support layer on the first electrode; the electrode lead-out structure comprises a patterned supporting layer and a plurality of electrode lead-out structures, wherein a first cavity penetrating through the supporting layer is formed, and an arched bridge of the electrode lead-out structure is positioned in the range of the first cavity; providing a first substrate, and covering the first cavity; and removing the annular sacrificial bulge to form an annular gap, wherein the annular gap is opposite to the annular groove. The invention defines the boundary of the effective resonance area through the area where the annular gap of the electrode leading-out structure is positioned, and makes the end part of the corresponding electrode at the boundary of the effective resonance area contact with the gas in the gap through the annular groove, thereby achieving the effect of eliminating the boundary clutter of the electrode of the effective resonance area and further improving the Q value of the resonator.
Description
Technical Field
The invention relates to the field of semiconductor device manufacturing, in particular to a manufacturing method of a film bulk acoustic resonator and a filter.
Background
Since the development of analog rf communication technology in the early 90 th century, rf front-end modules have gradually become the core components of communication devices. In all rf front-end modules, the filter has become the most fierce component to grow and have the greatest development prospect. With the rapid development of wireless communication technology, 5G communication protocols are becoming mature, and the market also puts forward more strict standards on various aspects of the performance of radio frequency filters. The performance of the filter is determined by the resonator elements that make up the filter. Among the existing filters, the Film Bulk Acoustic Resonator (FBAR) is one of the most suitable filters for 5G applications due to its small size, low insertion loss, large out-of-band rejection, high quality factor, high operating frequency, large power capacity, and good anti-electrostatic shock capability.
Generally, a film bulk acoustic resonator includes two film electrodes, and a piezoelectric film layer is disposed between the two film electrodes, and the working principle of the film bulk acoustic resonator is to utilize the piezoelectric film layer to generate vibration under an alternating electric field, the vibration excites a bulk acoustic wave propagating along the thickness direction of the piezoelectric film layer, the acoustic wave is transmitted to an interface between an upper electrode and a lower electrode and an air interface to be reflected back, and then reflected back and forth inside the film to form oscillation. When the sound wave is transmitted in the piezoelectric film layer and is just odd times of half wavelength, standing wave oscillation is formed.
However, the quality factor (Q) of the currently manufactured cavity type film bulk acoustic resonator cannot be further improved, and thus the requirement of a high-performance radio frequency system cannot be met.
Disclosure of Invention
The invention aims to provide a manufacturing method of a film bulk acoustic resonator and a filter, which can improve the quality factor of the film bulk acoustic resonator and further improve the device performance.
In order to achieve the above object, the present invention provides a method of manufacturing a thin film bulk acoustic resonator, comprising:
forming a first electrode, a piezoelectric layer and a second electrode, wherein the piezoelectric layer is positioned between the first electrode and the second electrode, and at least one of the first electrode and the second electrode forms an annular groove penetrating through the corresponding electrode;
forming an electrode lead-out structure having an arch bridge on an electrode having an annular trench, comprising: forming an annular sacrificial bulge; forming an electrode leading-out structure which covers the annular sacrificial bulge and has the edge lapped on the edge of the electrode in the effective resonance area;
forming a support layer on the first electrode;
patterning the supporting layer to form a first cavity penetrating through the supporting layer;
providing a first substrate, wherein the first substrate covers the first cavity, and the arch bridge of the electrode lead-out structure is positioned in the range of the first cavity;
and removing the annular sacrificial bulge to form an annular gap, wherein the annular gap is opposite to the annular groove.
The invention also provides a filter which comprises at least one film bulk acoustic resonator formed by the manufacturing method of the film bulk acoustic resonator.
The manufacturing method of the film bulk acoustic resonator has the advantages that:
the electrode lead-out structure with the arch bridge structure is formed by forming the annular sacrificial bulges on the corresponding electrodes, the annular gap is formed after the annular sacrificial bulges are removed to define the range of the effective resonance area, and then the corresponding electrodes are etched to form the annular grooves penetrating through the corresponding electrodes, so that the forming process of the electrode lead-out structure is simplified, the electrodes positioned inside and outside the annular grooves can be separated, and the disconnected electrodes are electrically connected through the electrode lead-out structure. In addition, the boundary of the corresponding electrode is exposed in the annular gap formed by the arched bridge through the annular groove, so that the effect of eliminating the electrode boundary clutter of the effective resonance area is achieved, and the Q value of the resonator is further improved.
Furthermore, the first cavity is formed by etching the supporting layer, so that the forming process can be simplified, and the manufacturing cost can be reduced.
Furthermore, the piezoelectric layer is formed on the flat electrode or the bearing substrate, so that the upper surface and the lower surface of the piezoelectric layer are both planes, the piezoelectric layer is ensured to have better lattice orientation, the piezoelectric property of the piezoelectric layer is improved, and the performance of the resonator is further improved.
Furthermore, the impedance of the electrode lead-out structure is lower than that of the corresponding electrode so as to reduce the impedance of the electrode, so that the electrode lead-out structure has better conductivity and the conductivity is improved.
Furthermore, the electrode lead-out structure and the corresponding electrode without the electrode lead-out structure or the electrode lead-out structures respectively arranged on the first electrode and the second electrode are at least partially staggered in the peripheral area of the arched bridge, so that the high-frequency coupling problem caused by potential floating can be avoided, the formation of parasitic capacitance is prevented, and the quality factor of the resonator is favorably improved.
Furthermore, the first electrode and/or the second electrode extend from the effective resonance area to the first substrate at the periphery of the first cavity, so that the structural strength of the resonator can be improved, and in addition, the electrode lead-out structures formed on the corresponding electrodes also extend from the effective resonance area to the first substrate at the periphery of the first cavity, so that the structural strength of the resonator is improved.
Furthermore, the piezoelectric layer is a complete film layer, so that the structural strength of the resonator can be guaranteed, and the yield of the resonator is improved.
Furthermore, the piezoelectric layer is provided with the first grooves, so that the edges of the piezoelectric layer are exposed to gas, the transverse wave loss of the piezoelectric layer can be inhibited, and the Q value of the resonator can be better improved when the first grooves are all located in the range of the annular gap.
The filter of the invention has the advantages that:
the film bulk acoustic resonator is connected to form the filter, so that the filter has good structural stability, and the electrode impedance of the resonator is low, so that the conductivity of the filter can be improved, and the accuracy of filtering is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a flowchart of a method of manufacturing a thin film bulk acoustic resonator according to embodiment 1 of the present invention;
fig. 2 to 5 are schematic structural diagrams corresponding to different steps of a method for manufacturing a film bulk acoustic resonator according to embodiment 1 of the present invention;
fig. 6 to 8 are schematic structural diagrams corresponding to different steps of another manufacturing method of a thin film bulk acoustic resonator formed in embodiment 1 of the present invention;
fig. 9 to 11 are schematic structural diagrams corresponding to different steps of another manufacturing method of a thin film bulk acoustic resonator formed in embodiment 1 of the present invention;
fig. 12 is a schematic structural view of a thin film bulk acoustic resonator manufactured by the method of manufacturing a thin film bulk acoustic resonator according to embodiment 2;
fig. 13 to 19 are schematic structural views of a thin film bulk acoustic resonator manufactured by the method of manufacturing a thin film bulk acoustic resonator according to embodiment 3;
fig. 20 is a schematic structural view of a thin film bulk acoustic resonator manufactured by the method of manufacturing a thin film bulk acoustic resonator according to embodiment 4.
Description of reference numerals:
11. a first substrate; 12. a support layer; 121. a first cavity; 21. a first electrode; 22. a piezoelectric layer; 23. a second electrode; 24. an annular groove; 25. a first trench; 3. an electrode lead-out structure; 31. an arch bridge; 32. an annular void; 32', an annular sacrificial projection; 4. a carrier substrate; 5. a second substrate; 51. an acoustic mirror.
Detailed Description
The film bulk acoustic resonator and the method for manufacturing the same according to the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description and drawings, it being understood, however, that the concepts of the present invention may be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. The drawings are in simplified form and are not to scale, but are provided for convenience and clarity in describing embodiments of the invention.
The terms "first," "second," and the like in the description and in the claims, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the terms so used are interchangeable under appropriate circumstances such that the embodiments of the invention described herein are, for example, capable of operation in other sequences than described or illustrated herein. Similarly, if the method described herein comprises a series of steps, the order in which these steps are presented herein is not necessarily the only order in which these steps may be performed, and some of the described steps may be omitted and/or some other steps not described herein may be added to the method. Although elements in one drawing may be readily identified as such in other drawings, the present disclosure does not identify each element as being identical to each other in every drawing for clarity of description.
Example 1
Fig. 1 is a flowchart of a method for manufacturing a thin film bulk acoustic resonator according to embodiment 1 of the present invention, and referring to fig. 1, embodiment 1 provides a method for manufacturing a thin film bulk acoustic resonator, where the method for manufacturing a thin film bulk acoustic resonator includes:
s01: forming a first electrode, a piezoelectric layer, and a second electrode, the piezoelectric layer being located between the first electrode and the second electrode;
s02: forming an annular groove penetrating through the corresponding electrode on at least one of the first electrode and the second electrode;
s03: forming an electrode lead-out structure having an arch bridge on an electrode having an annular trench, comprising: forming an annular sacrificial bulge; forming an electrode leading-out structure which covers the annular sacrificial bulge and has the edge lapped on the edge of the electrode in the effective resonance area;
s04: forming a support layer on the first electrode; the electrode lead-out structure comprises a patterned supporting layer and a plurality of electrode lead-out structures, wherein a first cavity penetrating through the supporting layer is formed, and an arched bridge of the electrode lead-out structure is positioned in the range of the first cavity;
s05: providing a first substrate, wherein the first substrate covers the first cavity;
s06: and removing the annular sacrificial bulge to form an annular gap, wherein the annular gap is opposite to the annular groove.
Step S0N does not represent a chronological order.
An electrode lead-out structure is provided on one of the first electrode 21 and the second electrode 24, a manufacturing method of the thin film bulk acoustic resonator is described below by taking an example of forming the electrode lead-out structure on the first electrode 31, fig. 2 to 5 are schematic structural diagrams corresponding to corresponding steps of a manufacturing method of the thin film bulk acoustic resonator according to the present embodiment, and the manufacturing method of the thin film bulk acoustic resonator according to the present embodiment is described in detail with reference to fig. 2 to 5.
Referring to fig. 2 to 5, in the present embodiment, the method of forming the first electrode 21, the piezoelectric layer 22, and the second electrode 24 includes: providing a carrier substrate 4; forming a second electrode 23, forming a piezoelectric layer 22 and forming a first electrode 21 in this order on the carrier substrate 4; after the first substrate 11 covers the first cavity 121 on the support layer 12, removing the carrier substrate 4; forming an electrode lead-out structure on the first electrode, specifically comprising: and after the first electrode is formed and before the supporting layer is formed, forming an electrode lead-out structure on the first electrode.
Referring to fig. 2, a carrier substrate 4 is provided, and the carrier substrate 4 may be a semiconductor material such as silicon (Si), germanium (Ge), silicon germanium (SiGe), silicon carbon (SiC), silicon germanium carbon (SiGeC), indium arsenide (InAs), gallium arsenide (GaAs), indium phosphide (InP), or other III/V compound semiconductors.
With continued reference to fig. 2, a second electrode 23, a piezoelectric layer 22 and a first electrode 21 are sequentially formed on the carrier substrate 4, wherein the first electrode 21 and the second electrode 23 may be formed by a physical vapor deposition process and an etching process, and the periphery of the first electrode 21 and/or the second electrode 23 extends to the support layer 12 at the periphery of the first cavity formed subsequently, so as to improve the structural strength of the resonator, which is better when the first electrode 21 and the second electrode 23 both extend from the effective resonance area to the first substrate 1 at the periphery of the first cavity 121 or the acoustic mirror 51. The piezoelectric layer 22 can be deposited using any suitable method known to those skilled in the art, such as chemical vapor deposition, physical vapor deposition, or atomic layer deposition. By forming the piezoelectric layer 22 on the flat second electrode 23, both the upper surface and the lower surface of the piezoelectric layer 22 are flat, thereby ensuring that the piezoelectric layer 22 has a better lattice orientation, improving the piezoelectric properties of the piezoelectric layer 22, and further improving the overall performance of the resonator. It should be noted that the periphery of the first electrode 21 is the outer edge of the whole structure thereof, the periphery of the second electrode 23 is the outer edge of the whole structure thereof, and the effective resonance region is the region surrounded by the subsequently formed annular gap.
In other embodiments, when the first electrode 21 and/or the second electrode 23 are formed, the corresponding electrodes may be etched, so that a portion of the circumference of the first electrode 21 and/or the second electrode 23 extends onto the support layer 12 at the periphery of the first cavity, and in this case, to ensure the structural strength of the resonator, the electrodes extending onto the first substrate 1 at the periphery of the first cavity 121 are symmetrically distributed, so as to ensure the support strength, so that the electrodes cover part or all of the first cavity.
The material of the first electrode 21 and the second electrode 23 may be any suitable conductive material or semiconductor material known in the art, wherein the conductive material may be a metal material having a conductive property, for example, made of one of metals such as molybdenum (Mo), aluminum (Al), copper (Cu), tungsten (W), tantalum (Ta), platinum (Pt), ruthenium (Ru), rhodium (Rh), iridium (Ir), chromium (Cr), titanium (Ti), gold (Au), osmium (Os), rhenium (Re), palladium (Pd), or a stack of the above metals, or a semiconductor material such as Si, Ge, SiGe, SiC, SiGeC, or the like. As a material of the piezoelectric layer 22, aluminum nitride (AlN), zinc oxide (ZnO), lead zirconate titanate (PZT), lithium niobate (LiNbO) can be used3) Quartz (Quartz), potassium niobate (KNbO)3) Or lithium tantalate (LiTaO)3) And the like, and combinations thereof. When the piezoelectric layer 22 material is aluminum nitride (AlN), the piezoelectric layer 22 may also include a rare earth metal, such as at least one of scandium (Sc), erbium (Er), yttrium (Y), and lanthanum (La). In addition, when the material of the piezoelectric layer 22 is aluminum nitride (AlN), the piezoelectric layer 22 may further include a transition metal, for example, at least one of zirconium (Zr), titanium (Ti), manganese (Mn), and hafnium (Hf).
With continued reference to fig. 2, before forming the annular sacrificial protrusion, the first electrode 21 is etched to form an annular trench 24, and the annular trench 24 is in a closed ring shape, so that the first electrode 21 is disconnected at the position of the annular trench 24, thereby facilitating the connection of the disconnected first electrode 21 by the subsequently formed electrode leading-out structure 3, and since the impedance of the subsequently formed electrode leading-out structure 3 is lower than that of the first electrode 21, the impedance of the first electrode 21 can be reduced. In addition, the annular trench 24 may also expose the boundary of the first electrode 21 to the annular gap 32 formed later, so as to achieve the effect of eliminating the electrode boundary noise in the effective resonance region, thereby improving the Q value of the resonator. The effective resonance area is an area surrounded by an annular gap formed by an arch bridge structure of the electrode lead-out structure formed subsequently.
In this embodiment, in the process of forming the annular groove 24 by etching, the piezoelectric layer 22 may also be etched to form a first groove 25 penetrating through the piezoelectric layer 22, and the first groove 25 penetrates through the piezoelectric layer 22, so that the end surface of the piezoelectric layer 22 and the gas in the first groove 25 form a reflection interface, thereby effectively suppressing the leakage of the acoustic wave in the piezoelectric layer 22, avoiding the occurrence of parasitic resonance, and improving the quality factor of the resonator. In other embodiments, after the piezoelectric layer 22 is formed, the piezoelectric layer 22 may be etched to form a first trench 25, the first trench 25 is filled with a sacrificial material, so that the upper surface of the first trench is flush with the upper surface of the piezoelectric layer 22, the first electrode 21 is formed thereon, the first electrode 21 is etched to form an annular trench, and the sacrificial material filled in the first trench 25 is removed, so that the annular trench 24 is formed to be opposite to the first trench 25.
Specifically, the projection of the first groove 25 on the surface of the piezoelectric layer 22 may partially overlap with the projection of the annular groove 24 on the surface of the piezoelectric layer 22, or the projection of the first groove 25 on the surface of the piezoelectric layer 22 may be entirely located within the projection of the annular groove 24 on the surface of the piezoelectric layer 22. In the present embodiment, when the first trench 25 and the annular trench 24 are formed simultaneously, the projection of the first trench 25 on the surface of the piezoelectric layer 22 and the projection of the annular trench 24 on the surface of the piezoelectric layer 22 are completely overlapped, and the acoustic wave suppression effect is good. In addition, the first trench 25 is a closed ring, and the piezoelectric layer 22 at the inner periphery of the annular gap 32 and the piezoelectric layer 22 at the outer periphery of the annular gap 32 are isolated from each other; alternatively, the first trench 25 is in the shape of a discontinuous ring, and the piezoelectric layer 32 inside the annular gap 32 is isolated from the piezoelectric layer outside the annular gap 32 by the discontinuity. When the first groove 25 is a closed ring, the sound wave suppression effect is good.
Referring to fig. 3, a first sacrificial material is deposited on the first electrode 21, the first sacrificial material fills the annular trench and the first trench and covers a portion of the first electrode 21 in the peripheral region of the annular trench, and the first sacrificial material includes phosphosilicate glass, low temperature silicon dioxide, borophosphosilicate glass, germanium, amorphous carbon, polyimide, or photoresist. The first sacrificial layer material patterned on the first electrode 21 forms an annular sacrificial protrusion 32 ', and the annular sacrificial protrusion 32' is a continuous structure, encloses a closed ring shape, and defines the boundary of the resonator effective resonance area through the boundary of the ring shape.
With continued reference to fig. 3, an electrode lead-out structure 3 is formed on the first electrode 21, covering the annular sacrificial protrusion 32', and having an edge overlapping the edge of the first electrode 21 in the effective resonance area, and specifically includes: and depositing a conductive material on the first electrode 21 to form an electrode lead-out structure 3, wherein the electrode lead-out structure 3 covers the first electrode 21 and the annular sacrificial protrusion 32' formed on the first electrode 21 and extends to the support layer 12 at the periphery of the first cavity. It should be noted that the deposited conductive material covers part of the first electrode 21 and the first electrode 21 at the periphery of the annular sacrificial protrusion 32 'and the annular sacrificial protrusion 32', and extends to the periphery of the first electrode 21, and the annular sacrificial protrusion 32 'forms a closed ring shape, so that the boundary of the annular sacrificial protrusion 32' defines the range of the effective resonance region. In addition, the electrode lead-out structure 3 and the second electrode 23 are formed to have first portions extending outside the effective resonance region, respectively, as electrode connection terminals.
In the actual manufacturing process, since the electrode leading-out structure 3 only needs to be connected with the first electrode 21 disconnected by the annular groove, the conductive material may also be etched to remove a portion of the conductive material located in the region surrounded by the annular sacrificial protrusion 32 ', so that the electrode leading-out structure 3 is disconnected inside the region surrounded by the annular sacrificial protrusion 32'. It should be noted that the arch bridge 31 of the electrode lead-out structure is a portion of the conductive material formed on the annular sacrificial protrusion 32'. The electrode extraction structure 3 is further patterned when the electrode extraction structure 3 is formed, and the second electrode 23 is further patterned when the second electrode 23 is formed, so that the electrode extraction structure 3 and the second electrode 23 are at least partially staggered at the periphery of an effective resonance region, the high-frequency coupling problem caused by potential floating is avoided, parasitic capacitance is prevented from being formed, and the quality factor of the resonator is improved. When the projections of the electrode lead-out structures 3 on the periphery of the effective resonance area and the second electrode 23 on the surface of the piezoelectric layer 22 are completely staggered, the problem of high-frequency coupling can be better avoided.
In the present embodiment, the electrode lead-out structure 3 is formed to extend from the periphery of the annular gap to the support layer on the periphery of the first cavity to be formed later. Specifically, the electrode lead-out structure 3 includes an arch bridge 31 and a lap portion connecting the arch bridge 31 and extending to the periphery of the first cavity 121 or the acoustic mirror 51, the periphery of the arch bridge 31 is lapped on the edge of the first electrode 21 in the effective resonance region, and the lap portion surrounds part of or the whole periphery of the first electrode 21. In other words, when part of the circumference of the strap extends to the outer edge of the support layer 12 around the periphery of the first cavity 121, or the entire circumference of the strap extends to the outer edge of the support layer 12 around the periphery of the first cavity 121 to be electrically connected to the outside, the resonator has a better structural strength when the entire circumference of the strap extends to the outer edge of the support layer 12 around the periphery of the first cavity 121. The lapping part can be a planar structure without etching and is laid on the first electrode 21; or, the overlapping part may be etched to form a plurality of strip-shaped overlapping parts, and the plurality of strip-shaped overlapping parts may be symmetrically distributed on the first electrode 21, thereby improving the structural strength of the resonator.
It should be noted that to reduce the impedance of the first electrode 21, the impedance of the electrode lead-out structure 3 should be lower than the impedance of the first electrode 21. The electrode lead-out structure 3 is made of a metal material, and the metal material comprises one or more of gold, silver, tungsten, platinum, aluminum, copper, titanium, tin and nickel.
Referring to fig. 4, a support layer 12 is formed on the first electrode 21. In the present embodiment, the support layer 12 may be formed on the first electrode 21 by physical vapor deposition or chemical vapor deposition to cover the first electrode 21 and the electrode lead-out structure 3. The material of the support layer 12 may be any suitable dielectric material, including but not limited to one of silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride, etc., but the technology of the present invention is not limited thereto.
With continued reference to fig. 4, the supporting layer 12 is patterned to form a first cavity 121 penetrating through the supporting layer 12, and the first cavity 121 exposes at least the arched bridge 31 structure of the electrode lead-out structure 3, so that an effective resonance area is formed above the first cavity 121, thereby facilitating the acoustic wave, which is located in the effective resonance area and transmitted between the first electrode 21 and the second electrode 23, to be reflected back through the gas interface in the first cavity 121, thereby improving the acoustic wave utilization rate. In the present embodiment, the first cavity 121 may be formed through an etching process. The cross-sectional shape of the first cavity 121 may be rectangular, but in other embodiments of the present invention, the cross-sectional shape of the first cavity 121 may also be circular, oval, or polygonal other than rectangular, such as pentagonal, hexagonal, etc.
With continued reference to fig. 4, a first substrate 11 is formed, the first substrate 11 covering the first cavity 121. In this embodiment, the first substrate 11 may be bonded to the support layer 12 by means of a bonding layer. The material of the bonding layer comprises silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride or ethyl silicate. In addition, the bonding layer may also use an adhesive such as a photo-curing material or a thermosetting material, for example, a Die Attach Film (DAF) or a Dry Film (Dry Film). The material of the first substrate 11 may be at least one of the following materials: silicon (Si), germanium (Ge), silicon germanium (SiGe), silicon carbon (SiC), silicon germanium carbon (SiGeC), indium arsenide (InAs), gallium arsenide (GaAs), indium phosphide (InP), or other III/V compound semiconductors.
Referring to fig. 5, the carrier substrate is removed and the structure is inverted. The carrier substrate may be removed by a grinding process or a wet etching process, or an isolation layer may be formed on the carrier substrate before the second electrode 23 is formed, and the carrier substrate may be peeled by removing the isolation layer. The material of the isolation layer includes but is not limited to at least one of silicon dioxide, silicon nitride, aluminum oxide and aluminum nitride or thermal expansion adhesive tape.
With continued reference to FIG. 5, the annular sacrificial projections are removed to form annular voids 32. Specifically, a release hole through the second electrode 23 to expose the first sacrificial layer material in the first trench 25 and the annular trench 24 is formed on the second electrode 23, and the annular sacrificial protrusion is removed through the release hole. The method for removing the annular sacrificial protrusion comprises the following steps: a first release hole exposing the annular sacrificial protrusion is formed on the second electrode 23, and the annular sacrificial protrusion is removed through the first release hole. In the process of removing the annular sacrificial protrusion, according to the material of the annular sacrificial protrusion, a corresponding removal method is adopted, for example, when the material of the annular sacrificial protrusion is polyimide or photoresist, an ashing method is adopted for removing, specifically, at a temperature of 250 ℃, oxygen and the material of the sacrificial layer undergo a chemical reaction through air, generated gas substances are volatilized, when the material of the annular sacrificial protrusion is low-temperature silicon dioxide, a hydrofluoric acid solvent and the low-temperature silicon dioxide undergo a reaction for removal, so that an annular gap 32 is formed, and the shape of the annular gap 32 is the same as that of the annular sacrificial protrusion.
In the present embodiment, the annular gap 32 is formed as a closed annular structure, and the annular gap 32 is opposite to the annular groove 24. When the annular groove 24 is opposite to the annular gap 32, the projection of the annular groove 24 on the surface of the piezoelectric layer 22 may partially overlap with the projection of the annular gap 32 on the surface of the piezoelectric layer 22, or the projection of the annular groove 24 on the surface of the piezoelectric layer 22 may be entirely located within the projection of the annular gap 32 on the surface of the piezoelectric layer 22. When the projection of the annular groove 24 on the surface of the piezoelectric layer 22 is entirely within the projection of the annular gap 32 on the surface of the piezoelectric layer 22, the effect of preventing the acoustic wave from leaking is good. In addition, the area surrounded by the annular gap is an effective resonance area, and the first electrode 21, the piezoelectric layer 22 and the second electrode 23 in the effective resonance area overlap with each other on a surface perpendicular to the piezoelectric layer 22.
In another embodiment, referring to fig. 6-8, the method of forming the first electrode 21, the piezoelectric layer 22, and the second electrode 23 further comprises: providing a carrier substrate 4; forming a first electrode 21 on the carrier substrate 4; after removing the carrier substrate 4, sequentially forming a piezoelectric layer 22 and a second electrode 23 on the first electrode 21; forming the electrode lead-out structure on the first electrode 21 includes: after the first electrode 21 is formed and before the support layer is formed, an electrode lead-out structure is formed on the first electrode 21. The method specifically comprises the following steps:
referring to fig. 6, a carrier substrate 4 is provided, and a first electrode 21 is formed on the carrier substrate 4. It should be noted that the annular trench 24 needs to be etched on the first electrode 21, so as to form the arch bridge structure of the electrode lead-out structure 3 at the position opposite to the annular trench 24. In the present embodiment, the annular trench 24 may be formed by etching after the first electrode 21 is formed and before the electrode lead-out structure 3 is formed. In other embodiments, the annular trench 24 can be formed after subsequent removal of the carrier substrate 4, prior to forming the piezoelectric layer 22.
Referring to fig. 7, the electrode lead-out structure 3 is formed on the first electrode 21; forming a support layer 12; etching the support layer 12 to form a first cavity 121 penetrating the support layer 12; the first substrate 11 is bonded on the support layer 12, and the first substrate 11 covers the first cavity 121. The specific steps can be described with reference to embodiment 1, wherein the annular sacrificial protrusion 32' fills the annular trench and covers the first electrode 21 in the peripheral region of the annular trench.
Referring to fig. 8, the carrier substrate is removed, the structure is inverted, and the piezoelectric layer 22 and the second electrode 23 are sequentially deposited on the first electrode 21. In the present embodiment, after the piezoelectric layer 22 is formed, the piezoelectric layer 22 is etched to form a groove penetrating through the piezoelectric layer 22 and the first electrode 21, wherein a portion penetrating through the first electrode 21 is an annular groove, a portion penetrating through the piezoelectric layer 22 is a first groove, and a projection of the annular groove and the first groove on the surface of the piezoelectric layer 22 completely overlap; filling a sacrificial material in the groove to enable the upper surface of the groove to be flush with the surface of the piezoelectric layer 22; a second electrode 23 is formed on the piezoelectric layer 22. In other embodiments, the first electrode 21 is etched to form an annular trench through the first electrode 21 prior to forming the piezoelectric layer 22; filling a sacrificial material in the annular groove to enable the upper surface of the annular groove to be flush with the upper surface of the first electrode 21; forming a piezoelectric layer 22 on the first electrode 21, and etching the piezoelectric layer 22 to form a first groove penetrating through the piezoelectric layer 22; filling the first trench with a sacrificial material so that the upper surface of the first trench is flush with the upper surface of the piezoelectric layer 22; forming a second electrode 23 on the piezoelectric layer 22, wherein the first groove is opposite to the annular groove, namely the projection of the first groove on the surface of the piezoelectric layer 22 is overlapped with the projection of the annular groove on the surface of the piezoelectric layer; alternatively, the projection of the first trench onto the surface of the piezoelectric layer 22 lies entirely within the projection of the annular trench onto the surface of the piezoelectric layer. It should be noted that after the second electrode 23 is formed, the sacrificial material and the annular sacrificial protrusion are removed, and the removal method is as described in embodiment 1 and will not be described herein.
In another embodiment, referring to fig. 9-11, the method of forming the first electrode 21, the piezoelectric layer 22, and the second electrode 23 further includes: providing a carrier substrate 4; sequentially forming a piezoelectric layer 22 and a first electrode 21 on the carrier substrate 4; after removing the carrier substrate 4, forming a second electrode 23 on the piezoelectric layer 22; forming an electrode lead-out structure 3 on the first electrode 21, including: after the first electrode 21 is formed, and before the support layer is formed, the electrode lead-out structure 3 is formed on the first electrode 21. The method specifically comprises the following steps:
referring to fig. 9, a carrier substrate 4 is provided, a piezoelectric layer 22 is formed on the carrier substrate 4, a first electrode 21 is formed on the piezoelectric layer 22, the first electrode 21 and the piezoelectric layer 22 are etched, and a groove penetrating through the first electrode 21 and the piezoelectric layer 22 is formed, wherein a portion penetrating through the first electrode 21 is an annular groove 24, and a portion penetrating through the piezoelectric layer 22 is a first groove 25. In other embodiments, the etching of the annular trench 24 and the first trench 25 may be performed simultaneously or in steps to etch the piezoelectric layer 22 and the first electrode 21 prior to the subsequent formation of the second electrode 23.
Referring to fig. 10, an electrode lead-out structure 3 and a support layer 12 having a first cavity are formed on a first electrode 21; the first substrate 11 is bonded on the support layer 12. The specific steps can be described in embodiment 1, and are not described herein again. Wherein, the annular sacrificial protrusion 32' forming the arch bridge structure of the electrode lead-out structure 3 fills the annular trench and the first trench and covers a part of the first electrode 21 in the peripheral region of the annular trench.
Referring to fig. 11, the carrier substrate is removed and the structure is reversed, and a second electrode 23 is deposited on the piezoelectric layer 22. It should be noted that before the second electrode 23 is formed, the annular sacrificial protrusion forming the annular gap 31 structure of the electrode lead-out structure 3 may be removed.
When the electrode lead-out structure is not formed on the first electrode 21, the electrode lead-out structure 3 is formed on the second electrode 23, and the forming steps thereof can refer to the above steps and embodiment 1, and are not described herein again.
In other embodiments, when the electrode lead-out structure 3 is not disposed on the first electrode 21, the electrode lead-out structure 3 needs to be formed on the second electrode 23, and the process of forming the electrode lead-out structure 3 on the second electrode is required, so that the step of forming the annular groove 24 and the electrode lead-out structure 3 on the first electrode 21 in embodiment 4 is omitted, and after the second electrode 23 is formed, the annular groove and the electrode lead-out structure are formed on the second electrode 23, and the forming process thereof may refer to the process of forming the electrode lead-out structure 3 on the first electrode 21, and will not be described herein again. It should be noted that, in this process, the first trench 25 may be formed when the annular trench 24 penetrating through the second electrode 23 is formed, or may be formed after the piezoelectric layer 22 is formed and before the second electrode 23 is formed, and when the first trench is formed after the piezoelectric layer 22 is formed and before the second electrode 23 is formed, it is necessary to fill the first trench 25 with a sacrificial material so that the upper surface of the first trench and the surface of the piezoelectric layer 22 are flat, and then form the second electrode 23.
Example 2
Embodiment 2 provides a manufacturing method of a thin film bulk acoustic resonator, and fig. 12 is a schematic structural diagram of a thin film bulk acoustic resonator manufactured by the manufacturing method of the thin film bulk acoustic resonator according to this embodiment, which is different from embodiment 1 in that a first trench 25 is formed in a piezoelectric layer 22 in embodiment 1, the piezoelectric layer 22 in this embodiment is a complete film layer, a step of etching the piezoelectric layer 22 in embodiment 1 is omitted, and the rest steps refer to embodiment 1. The method specifically comprises the following steps: the piezoelectric layer 22 is not etched, and is a complete film covering the first cavity 121 and extending to the first substrate 11 outside the first cavity 121, so as to ensure the structural strength of the resonator and improve the yield of the resonator.
Example 3
in this embodiment, referring to fig. 13 to 15, specifically: forming a second electrode 23, forming a piezoelectric layer 22, and forming a first electrode 21 in this order on the carrier substrate 4; etching the first electrode 21 to form a groove penetrating through the first electrode 21, the piezoelectric layer 22 and the second electrode 23, wherein the part penetrating through the first electrode 21 and the second electrode 23 is an annular groove; the portion that penetrates the piezoelectric layer 22 is a first trench 25, see fig. 13. Accordingly, when a first sacrificial material is deposited on the first electrode 21 to form an annular sacrificial protrusion, the first sacrificial material fills the trench and covers the first electrode 21 in the peripheral region of the trench, and then an electrode lead-out structure 3 covering the annular sacrificial protrusion is formed on the first electrode 21, as shown in fig. 14. Forming a support layer 12 on the first electrode 21; etching the support layer 12 to form a first cavity 121 penetrating the support layer 12; providing a first substrate 11 covering the first cavity 121; the carrier substrate 4 is removed and the structure is reversed. Another annular sacrificial protrusion is formed on the second electrode 21, and the annular sacrificial protrusion is connected to the annular sacrificial protrusion and covers a part of the surface of the second electrode 23, and then an electrode lead-out structure 3 is formed on the second electrode 23 and covers the annular sacrificial protrusion, as shown in fig. 15. Finally, the sacrificial material is removed. The specific forming process of the above steps and the remaining steps of the film bulk acoustic resonator refer to embodiment 1, and are not described herein again.
It should be noted that, when the electrode lead-out structure 3 is formed on the first electrode 21, patterning of the electrode lead-out structure is further included, when the electrode lead-out structure 3 is formed on the second electrode 23, patterning of the electrode lead-out structure is further included, so that the electrode lead-out structure 3 formed on the first electrode 21 and the electrode lead-out structure 3 formed on the second electrode 23 are at least partially staggered with each other at the periphery of the annular gap, that is, at the periphery of the annular gap, the projection of the electrode lead-out structure 3 formed on the first electrode 21 and the projection of the electrode lead-out structure 3 formed on the second electrode 23 on the surface of the piezoelectric layer 22 are at least partially non-overlapped, so as to avoid the high-frequency coupling problem caused by the existence of potential floating, prevent the formation of parasitic capacitance, and improve the resonator quality factor. When the electrode lead-out structures 3 formed on the first electrode 21 and the electrode lead-out structures 3 formed on the second electrode 23 are completely staggered from each other at the periphery of the annular gap, the problem of high-frequency coupling can be better avoided.
Since the area enclosed by the annular gap 32 is the effective resonance area, the arch-shaped bridge 31 structure of the electrode lead-out structure 3 formed on the first electrode 21 is opposite to the arch-shaped bridge 31 structure of the electrode lead-out structure 3 formed on the second electrode 23, that is, the projection of the arch-shaped bridge 31 structure formed on the first electrode 21 and the projection of the arch-shaped bridge 31 structure formed on the second electrode 23 on the surface of the piezoelectric layer 22 are overlapped, so that the effective resonance areas enclosed by the annular gaps in the two arch-shaped bridges are the same area. In addition, the electrode lead-out structure 3 provided on the first electrode 21 and the electrode lead-out structure 3 provided on the second electrode 23 respectively have second portions extending outside the effective resonance region as electrode connection terminals.
In another embodiment, referring to fig. 16-17, the steps of embodiment 4 are performed, and after the off-loading substrate and before the annular sacrificial protrusion on the first electrode 21 is removed, the second electrode 23 is etched to form an annular trench penetrating through the second electrode 23, referring to fig. 16. An annular sacrificial protrusion is formed on the second electrode 23, covering the first sacrificial material and covering a part of the second electrode 23, and an electrode lead-out structure 3 covering the annular sacrificial protrusion is formed on the second electrode 23, refer to fig. 17. The first sacrificial material and the annular sacrificial protrusion are removed. The specific forming process corresponding to the above steps and other steps of the film bulk acoustic resonator refer to embodiment 1, and are not described herein again.
Referring to fig. 18-19, in another embodiment, the second electrode 23, the piezoelectric layer 22, and the first electrode 21 are sequentially formed on the carrier substrate 4; an electrode lead structure is formed on the first electrode 21, see fig. 18. Forming a support layer 12 on the first electrode 21; etching the support layer 12 to form a first cavity 121 penetrating the support layer 12; providing a first substrate 11 covering the first cavity 121; the carrier substrate 4 is removed and the structure is reversed. Etching a groove penetrating the second electrode 23, the piezoelectric layer 22 and the first electrode 21 on the second electrode 23; filling sacrificial materials in the groove and covering a part of the second electrode 23 in the peripheral region of the groove; an electrode lead-out structure is formed by filling a conductive material, covering the sacrificial material on the surface of the second electrode 23 and a part of the second electrode 23, as shown in fig. 19. The sacrificial material is removed. The specific formation process of the above steps refers to embodiment 1, and is not described herein again.
Example 4
In the above embodiments 3 and 4, the first electrode 21 and the second electrode 23 are both provided with the electrode lead-out structure 3, and the electrode lead-out structure provided on the first electrode 21 and the electrode lead-out structure provided on the second electrode 23 are at least partially staggered from each other at the periphery of the annular gap, so as to avoid the high-frequency coupling problem caused by potential floating, prevent the formation of parasitic capacitance, and further improve the quality factor of the resonator. When the electrode lead-out structure arranged on the first electrode 21 and the electrode lead-out structure arranged on the second electrode 23 are completely staggered at the periphery of the annular gap, the problem of high-frequency coupling can be better avoided. The structure of the electrode lead-out structure 3 and the relative relationship between the electrode lead-out structure and the corresponding electrode, and between the supporting layers can refer to embodiment 1, and are not described herein again.
Example 5
Embodiment 5 of the present invention provides a filter including at least one thin film bulk acoustic resonator manufactured by the method described above. The film bulk acoustic resonator is connected to form the filter, so that the filter has good structural stability, and the electrode impedance of the resonator is low, so that the conductivity of the filter can be improved, and the accuracy of filtering is improved.
It should be noted that, in the present specification, all the embodiments are described in a related manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the structural embodiment, since it is substantially similar to the method embodiment, the description is relatively simple, and for the relevant points, reference may be made to the partial description of the method embodiment.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (22)
1. A method of manufacturing a film bulk acoustic resonator, comprising:
forming a first electrode, a piezoelectric layer, and a second electrode, the piezoelectric layer being located between the first electrode and the second electrode;
forming an annular groove penetrating through the corresponding electrode on at least one of the first electrode and the second electrode;
forming an electrode lead-out structure having an arch bridge on the electrode having the annular trench, including: forming an annular sacrificial bulge; forming an electrode leading-out structure which covers the annular sacrificial bulge and is overlapped on the edge of the electrode in the effective resonance area;
forming a support layer on the first electrode;
patterning the supporting layer to form a first cavity penetrating through the supporting layer, wherein the arch bridge of the electrode lead-out structure is positioned in the range of the first cavity;
providing a first substrate covering the first cavity;
and removing the annular sacrificial bulge to form an annular gap, wherein the annular gap is opposite to the annular groove.
2. The method of manufacturing a thin film bulk acoustic resonator according to claim 1, wherein the method of forming the first electrode, the piezoelectric layer, and the second electrode comprises:
providing a carrier substrate; sequentially forming the second electrode, the piezoelectric layer and the first electrode on the bearing substrate;
removing the bearing substrate after the first substrate covers the first cavity on the supporting layer;
at least one of the first electrode and the second electrode forms the electrode extraction structure;
forming an electrode lead-out structure on the first electrode includes: forming an electrode lead-out structure on the first electrode after forming the first electrode and before forming the supporting layer;
forming an electrode lead-out structure on the second electrode includes: after the bearing substrate is removed, forming the electrode lead-out structure on the second electrode; or,
providing a carrier substrate;
forming the first electrode on the carrier substrate;
after removing the bearing substrate, sequentially forming a piezoelectric layer and a second electrode on the first electrode;
at least one of the first electrode and the second electrode forms the electrode extraction structure;
forming an electrode lead-out structure on the first electrode includes: forming an electrode lead-out structure on the first electrode after forming the first electrode and before forming the supporting layer;
forming an electrode lead-out structure on the second electrode includes: after the bearing substrate is removed, forming the electrode lead-out structure on the second electrode; (ii) a Or,
providing a carrier substrate;
sequentially forming a piezoelectric layer and a first electrode on the bearing substrate;
after removing the bearing substrate, forming the second electrode on the piezoelectric layer;
at least one of the first electrode and the second electrode forms the electrode extraction structure;
forming an electrode lead-out structure on the first electrode includes: forming an electrode lead-out structure on the first electrode after forming the first electrode and before forming the supporting layer;
forming an electrode lead-out structure on the second electrode includes: after the bearing substrate is removed, forming the electrode lead-out structure on the second electrode; .
3. The method of manufacturing a thin film bulk acoustic resonator according to claim 1, wherein after the respective electrodes are formed, the respective electrodes are etched to form annular trenches penetrating the respective electrodes;
forming an electrode lead-out structure on the respective electrodes before or after forming the annular trench on the respective electrodes.
4. The method for manufacturing a film bulk acoustic resonator according to claim 1, wherein the method for forming an electrode lead-out structure on the corresponding electrode, which covers the annular sacrificial protrusion and has an edge overlapping an electrode edge of the effective resonance area, comprises:
depositing a conductive material on the corresponding electrode to form an electrode leading-out structure, wherein the electrode leading-out structure covers the annular sacrificial protrusion arranged on the corresponding electrode; or,
depositing a conductive material on the respective electrode, the conductive material covering the respective electrode and the annular sacrificial protrusion formed on the respective electrode;
and etching the conductive material, and removing part of the conductive material in the region surrounded by the annular sacrificial protrusion to form an electrode leading-out structure.
5. The method of manufacturing a thin film bulk acoustic resonator according to claim 1, wherein the electrode lead-out structure extends from the periphery of the annular gap to the support layer on the periphery of the first cavity.
6. The method of manufacturing a thin film bulk acoustic resonator according to claim 1, wherein the periphery of the first electrode and/or the second electrode extends onto the support layer at the periphery of the first cavity.
7. The method for manufacturing a thin film bulk acoustic resonator according to claim 1, wherein one of the first electrode and the second electrode is provided with an electrode lead-out structure, and the electrode lead-out structure and the corresponding electrode not provided with the electrode lead-out structure each have a first portion extending outside the effective resonance region, the first portion serving as an electrode connection terminal.
8. The method of manufacturing a thin film bulk acoustic resonator according to claim 7, further comprising patterning the electrode lead-out structure when forming the electrode lead-out structure, and further comprising patterning the corresponding electrode when forming the corresponding electrode not provided with the electrode lead-out structure, so that the electrode lead-out structure and the corresponding electrode not provided with the electrode lead-out structure are at least partially displaced from each other at a periphery of the annular gap.
9. The method of manufacturing a thin film bulk acoustic resonator according to claim 1, wherein the first electrode and the second electrode each form an electrode lead-out structure, and the electrode lead-out structure provided on the first electrode and the electrode lead-out structure provided on the second electrode respectively have a second portion extending outside the effective resonance region, the second portion serving as an electrode connection terminal.
10. The method of manufacturing a thin film bulk acoustic resonator according to claim 9, further comprising patterning the electrode lead-out structure so that the electrode lead-out structure formed on the first electrode and the electrode lead-out structure formed on the second electrode are at least partially offset from each other at the periphery of the annular gap when forming the electrode lead-out structure;
the arched bridge structure of the electrode lead-out structure formed on the first electrode is arranged opposite to the arched bridge structure of the electrode lead-out structure formed on the second electrode.
11. The method of manufacturing a thin film bulk acoustic resonator according to claim 1, wherein the impedance of the electrode lead-out structure is lower than the impedance of the corresponding electrode.
12. The method of manufacturing a thin film bulk acoustic resonator according to claim 1, wherein the material of the electrode lead-out structure is a metal material, and the metal material includes one or more of gold, silver, tungsten, platinum, aluminum, copper, titanium, tin, and nickel.
13. The method of manufacturing a thin film bulk acoustic resonator according to claim 1, wherein the annular gap is a closed annular gap.
14. The method for manufacturing a thin film bulk acoustic resonator according to claim 1, wherein a piezoelectric layer is formed so as to cover the first cavity and extend to the periphery of the first cavity; or,
and etching the piezoelectric layer after the piezoelectric layer is formed, and forming a first groove penetrating through the piezoelectric layer, wherein the first groove is opposite to the annular groove.
15. The method for manufacturing a thin film bulk acoustic resonator according to claim 14, wherein the first trench has a closed ring shape, and the piezoelectric layer on the inner periphery of the ring-shaped void and the piezoelectric layer on the outer periphery of the ring-shaped void are isolated from each other; or,
the first groove is in a discontinuous ring shape, and the piezoelectric layer on the inner periphery of the annular gap is isolated from the piezoelectric layer on the periphery of the annular gap through a discontinuous part.
16. The method of manufacturing a thin film bulk acoustic resonator according to claim 1, wherein the material of the support layer comprises: silicon dioxide, silicon nitride, aluminum oxide or nitride, silicon oxynitride, silicon carbonitride.
17. The method of manufacturing a thin film bulk acoustic resonator according to claim 1, wherein the forming a first substrate on the support layer comprises:
and forming a bonding layer on the support layer or the first substrate, and bonding the first substrate and the support layer through the bonding layer to cover the first cavity.
18. The method of manufacturing a thin film bulk acoustic resonator according to claim 17, wherein the material of the bonding layer comprises: silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride or ethyl silicate.
19. The method of claim 1, wherein the annular sacrificial protrusion is made of a material selected from the group consisting of phosphosilicate glass, low temperature silicon dioxide, borophosphosilicate glass, germanium, amorphous carbon, polyimide, and photoresist.
20. The method of manufacturing a thin film bulk acoustic resonator according to claim 1, wherein the material of the first electrode or the second electrode includes: molybdenum, aluminum, copper, tungsten, tantalum, platinum, ruthenium, rhodium, iridium, chromium, titanium, gold, osmium, rhenium, or palladium.
21. The method of manufacturing a thin film bulk acoustic resonator according to claim 1, wherein the material of the piezoelectric layer comprises: aluminum nitride, zinc oxide, lead zirconate titanate, lithium niobate, quartz, potassium niobate, or lithium tantalate.
22. A filter comprising at least one thin film bulk acoustic resonator formed by the method for manufacturing a thin film bulk acoustic resonator according to any one of claims 1 to 21.
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| CN202010995761.0A CN114257192A (en) | 2020-09-21 | 2020-09-21 | Method for manufacturing film bulk acoustic resonator and filter |
| PCT/CN2021/117995 WO2022057766A1 (en) | 2020-09-21 | 2021-09-13 | Method for manufacturing film bulk acoustic resonator, and filter |
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Cited By (4)
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| CN117833859A (en) * | 2024-01-03 | 2024-04-05 | 武汉敏声新技术有限公司 | Resonator and preparation method thereof |
| CN118100856A (en) * | 2024-04-18 | 2024-05-28 | 深圳新声半导体有限公司 | Resonant structure, acoustic resonator and acoustic filter |
| CN118100855A (en) * | 2024-04-18 | 2024-05-28 | 深圳新声半导体有限公司 | Resonant structure, acoustic resonator and acoustic filter |
| CN118100855B (en) * | 2024-04-18 | 2024-10-25 | 深圳新声半导体有限公司 | Resonant structure, acoustic resonator and acoustic filter |
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| CN114938213B (en) * | 2022-06-08 | 2023-04-14 | 武汉敏声新技术有限公司 | Film bulk acoustic resonator and preparation method thereof |
| WO2024027033A1 (en) * | 2022-08-04 | 2024-02-08 | Huawei Technologies Co., Ltd. | Acoustic resonator |
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| US8248185B2 (en) * | 2009-06-24 | 2012-08-21 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic resonator structure comprising a bridge |
| US10340885B2 (en) * | 2014-05-08 | 2019-07-02 | Avago Technologies International Sales Pte. Limited | Bulk acoustic wave devices with temperature-compensating niobium alloy electrodes |
| KR102117471B1 (en) * | 2015-01-12 | 2020-06-01 | 삼성전기주식회사 | Acoustic resonator and manufacturing method thereof |
| CN105680813B (en) * | 2016-02-25 | 2018-12-07 | 锐迪科微电子（上海）有限公司 | A kind of thin film bulk acoustic wave resonator and its manufacturing method |
| CN110829997B (en) * | 2018-08-07 | 2023-04-28 | 芯知微(上海)电子科技有限公司 | Thin film bulk acoustic resonator and method of manufacturing the same |
| CN208768044U (en) * | 2018-11-13 | 2019-04-19 | 杭州左蓝微电子技术有限公司 | Thin film bulk acoustic wave resonator based on bonding |
| CN110868177B (en) * | 2019-04-23 | 2023-08-15 | 中国电子科技集团公司第十三研究所 | Resonator and filter |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117833859A (en) * | 2024-01-03 | 2024-04-05 | 武汉敏声新技术有限公司 | Resonator and preparation method thereof |
| CN118100856A (en) * | 2024-04-18 | 2024-05-28 | 深圳新声半导体有限公司 | Resonant structure, acoustic resonator and acoustic filter |
| CN118100855A (en) * | 2024-04-18 | 2024-05-28 | 深圳新声半导体有限公司 | Resonant structure, acoustic resonator and acoustic filter |
| CN118100855B (en) * | 2024-04-18 | 2024-10-25 | 深圳新声半导体有限公司 | Resonant structure, acoustic resonator and acoustic filter |
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