CN107196618A - FBAR and preparation method thereof - Google Patents
FBAR and preparation method thereof Download PDFInfo
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- CN107196618A CN107196618A CN201710083387.5A CN201710083387A CN107196618A CN 107196618 A CN107196618 A CN 107196618A CN 201710083387 A CN201710083387 A CN 201710083387A CN 107196618 A CN107196618 A CN 107196618A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 24
- 239000010703 silicon Substances 0.000 claims abstract description 24
- 239000010409 thin film Substances 0.000 claims abstract description 23
- 239000010408 film Substances 0.000 claims abstract description 17
- 230000008021 deposition Effects 0.000 claims abstract description 11
- 238000002161 passivation Methods 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 13
- 229910000679 solder Inorganic materials 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 239000004642 Polyimide Substances 0.000 claims description 6
- 229920001721 polyimide Polymers 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 4
- 230000003447 ipsilateral effect Effects 0.000 claims description 2
- 239000012528 membrane Substances 0.000 abstract description 12
- 239000000463 material Substances 0.000 abstract description 4
- 230000009643 growth defect Effects 0.000 abstract description 2
- 238000004891 communication Methods 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010295 mobile communication Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- 241000208340 Araliaceae Species 0.000 description 1
- 229910003327 LiNbO3 Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- RZVXOCDCIIFGGH-UHFFFAOYSA-N chromium gold Chemical compound [Cr].[Au] RZVXOCDCIIFGGH-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000012010 growth Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- UPIXZLGONUBZLK-UHFFFAOYSA-N platinum Chemical compound [Pt].[Pt] UPIXZLGONUBZLK-UHFFFAOYSA-N 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 230000034655 secondary growth Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000013268 sustained release Methods 0.000 description 1
- 239000012730 sustained-release form Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0504—Holders; Supports for bulk acoustic wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
- H03H9/586—Means for mounting to a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/587—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/022—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the cantilever type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
Abstract
The present invention proposes a kind of FBAR and preparation method thereof, and the resonator includes the silicon chip with air-gap and the piezoelectricity sandwich structure being covered on the air-gap；The piezoelectricity sandwich structure includes top electrode, piezoelectric and hearth electrode, and wherein top electrode, piezoelectric, hearth electrode is stacked gradually；The top electrode, the piezoelectric, the hearth electrode are graphical one by one again after respective deposited intact, and it is graphical after top electrode, piezoelectric thin film layer, bottom electrode layer area successively increase from top to bottom, so that the hearth electrode, the piezoelectric, the edge of the top electrode are retracted successively, formed step-like；The wherein side stepped edge of the piezoelectricity sandwich structure is respectively positioned on the outside at homonymy air-gap edge.The present invention is patterned one by one again after the deposition by completing piezoelectricity sandwich three level stack material, it effectively prevent the penalty caused by piezoelectric membrane growth defect caused by edge is lofty, in addition, by covering organic film in the specific region of sandwich structure, harmful spurious resonance is absorbed, device performance and reliability is further improved.
Description
Technical field
The present invention relates to a kind of FBAR, more particularly to one kind once prepares resonator piezoelectricity sandwich
FBAR of structure and preparation method thereof.
Background technology
With the development of wireless communication applications, requirement more and more higher of the people for data transmission bauds.In mobile communication
Field, the first generation is analogue technique, and the second generation realizes digitized voice communications, and the third generation (3G) is using multimedia communication as spy
Levy, traffic rate is brought up to 1Gbps, time delay and is reduced to 10ms by forth generation (4G), and the 5th generation (5G) was a new generation after 4G
Mobile communication technology, although 5G technical specification is with standard also without completely clearly, but compared with 3G, 4G, and its network transmission is fast
Rate and network capacity will be substantially improved.If what is mainly solved from 1G to 4G is interpersonal communication, 5G will solve people
Interconnected with people and thing outside people, the communication between thing and thing, i.e. all things on earth, realize the hope of " information follow one's inclinations to, all things on earth tentacle and "
Scape.
Corresponding with data transfer rate rising is high usage and the complication of communications protocol of frequency spectrum resource.Due to frequency spectrum
It is limited, in order to meet the demand of data transfer rate, it is necessary to make full use of frequency spectrum；While the demand in order to meet data transfer rate, since 4G
Also use carrier aggregation technology so that an equipment can utilize different carrier spectrum transmission data simultaneously.On the other hand,
In order to support enough data transmission rates in limited bandwidth, communication protocol becomes to become increasingly complex, therefore to radio system
Various performances it is also proposed strict demand.
In RF front-end module, radio-frequency filter plays vital effect.It can be by out-of-band interference and noise
Filter out to meet the demand of radio system and communications protocol for signal to noise ratio.As communication protocol becomes increasingly complex, in frequency band
Outer requirement also more and more higher so that the design of wave filter increasingly has challenge.In addition, as mobile phone needs the frequency band number of support
Mesh constantly rises, and needs the wave filter quantity used also constantly rising in every Mobile phone.
Current radio-frequency filter most main flow is achieved in that SAW filter and based on FBAR
The wave filter of technology.SAW filter is used below proper in 1.5GHz due to the limitation of its own.However,
Current home control network communication protocol already using the frequency range more than 2.5GHz, at this moment must be used based on film bulk acoustic resonator
The wave filter of device technology.
The structure and preparation method of FBAR have had a lot.In conventional structure and preparation method,
It can be patterned to form hearth electrode after the hearth electrode film of FBAR has been deposited, then again in figure
Piezoelectric membrane is grown on hearth electrode after shape.Because the hearth electrode edge after graphical is usually right angle or better corrosion
Tapered structure, at this edge, piezoelectric membrane can not grow along the direction vertical with substrate surface that we need, thus can
Cause the piezoelectric membrane performance of this part bad, or even crackle can be formed, the performance and ESD for leveraging resonator are reliable
Property.
The content of the invention
The purpose of the present invention is the defect for prior art, it is proposed that one kind once prepares resonator piezoelectricity sandwich knot
FBAR of structure and preparation method thereof.During resonator is prepared, figure is not carried out to hearth electrode film
Change, the direct complete piezoelectric membrane of a secondary growth can avoid the problem of prior art is present.
Scheme proposed by the present invention is as follows：
A kind of preparation method of FBAR, it is characterised in that comprise the following steps：
(a)：Silicon chip is performed etching, formed sacrifice layer hole, silicon substrate surface deposition of sacrificial layer, fill up it is described sacrificial
Domestic animal layer hole；
(b)：The sacrifice layer of silicon substrate surface is polished, the sacrifice layer of silicon substrate surface is thrown except clean；
(c)：Bottom electrode layer, piezoelectric thin film layer and top electrode layer are sequentially depositing in silicon substrate surface；
(d)：Graphical top electrode, piezoelectric thin film layer, bottom electrode layer successively, and it is graphical after top electrode, pressure from top to bottom
Thin film layer, bottom electrode layer area successively increase, and the edge of the piezoelectricity sandwich structure is in step-like；The patterned top
Electrode, piezoelectric thin film layer, bottom electrode layer constitute the FBAR of piezoelectricity sandwich structure.
Further, it is further comprising the steps of：
Deposit passivation layer is simultaneously graphical, and the passivation layer covers a lateral edges of the sandwich structure.
Further, it is further comprising the steps of：
Deposit interconnecting metal layer and graphical, the interconnecting metal layer is through graphical formation solder joint metal or connects neighbouring
The interconnection electrode of FBAR.
Further, it is further comprising the steps of：
Deposition of organic thin film layer is simultaneously graphical, and the patterned organic thin film layer covers the edge of the sacrifice layer hole
To the ipsilateral penumbra region of the sandwich structure top electrode.
Further, the organic film includes polyimides.
Further, it is further comprising the steps of：
Releasing sacrificial layer, forms the air-gap of the FBAR.
The present invention also proposes a kind of FBAR, and the resonator includes the silicon chip with air-gap and covering
Piezoelectricity sandwich structure on the air-gap；The piezoelectricity sandwich structure includes top electrode, piezoelectric and hearth electrode,
Wherein top electrode, piezoelectric, hearth electrode are stacked gradually；The top electrode, the piezoelectric, the hearth electrode are each complete
It is graphical one by one again after whole deposition, and it is graphical after top electrode, piezoelectric thin film layer, bottom electrode layer area successively increase from top to bottom
Greatly so that the hearth electrode, the piezoelectric, the edge of the top electrode are retracted successively, form step-like；The piezoelectricity three
The wherein side stepped edge of Mingzhi's structure is respectively positioned on the outside at homonymy air-gap edge.
Further, in addition to organic thin film layer, the organic thin film layer covers the piezoelectricity sandwich structure and is located at institute
State the region at top electrode edge to the homonymy air-gap edge of stepped edge on the outside of air-gap edge.
Present invention additionally comprises a kind of wave filter, include FBAR or the side according to the present invention of the present invention
FBAR prepared by method.
The present invention is patterned one by one again after the deposition by completing piezoelectricity sandwich three level stack material, is effectively kept away
The penalty caused by piezoelectric membrane growth defect caused by edge is lofty is exempted from, in addition, by sandwich structure
Specific region covering organic film, absorb harmful spurious resonance, further improve device performance and reliability.
Brief description of the drawings
Fig. 1 is a kind of FBAR sectional structure chart of the invention；
Fig. 2 is a kind of preparation technology flow chart of FBAR of the present invention.
Embodiment
Below by drawings and examples, technical scheme is described in further detail.
Embodiment 1
The invention discloses a kind of FBAR, its structure is referring to Fig. 1, and wherein Fig. 1 (a) is cross-section structure
Figure, Fig. 1 (b) are top plan view.Wherein for the interconnected relationship for illustrating multiple FBARs, include 2 thin
Film body acoustic resonator and its interconnection structure.Specifically：Including substrate 101, the substrate is, for example, silicon chip；Formed in substrate 101
The the first air-gap 109-1 and the second air-gap 109-2 of upper surface；Positioned at the first air-gap 109-1 and the second air-gap 109-2
The sandwich piezoelectric membrane stacked structure of top, including first electrode 103-1 and second electrode 103-2, are formed in first electrode
The first piezoelectric layer 104-1 and the second piezoelectric layer 104-2 above 103-1 and second electrode 103-2, are formed in the first piezoelectric layer
The 3rd electrode 105-1 and the 4th electrode 105-2 above 104-1 and the second piezoelectric layer 104-2.
In the present invention, first electrode, second electrode, the 3rd electrode, the 4th electrode material can include tungsten, molybdenum, platinum platinum,
One of ruthenium, iridium, titanium tungsten, aluminium, chromium, gold or combination, the first piezoelectric layer, the material of the second piezoelectric layer can include：Aluminium nitride
(AlN), zinc oxide (ZnO), lithium niobate (LiNbO3), lithium tantalate (LiTaO3), one of lead titanate piezoelectric ceramics (PZT) or
Combination.
In one direction first electrode 103-1 and second electrode 103-2 respectively the first air-gap 109-1 of complete covering and
Second air-gap 109-2；First piezoelectric layer 104-1 and the second piezoelectric layer 104-2 are located at the electricity of first electrode 103-1 and second respectively
On the 103-2 of pole, the first piezoelectric layer 104-1 left end can be concordant with the first air-gap 109-1 left end；Preferably, the first pressure
Electric layer 104-1 left end is located on the right side of the first air-gap 109-1 left end but on the left of the first air-gap 109-1 right-hand member；
Similarly, the second piezoelectric layer 104-2 left end can be concordant with the second air-gap 109-2 left end；Preferably, the second piezoelectricity
Layer 104-2 is located on the right side of the second air-gap 109-2 left end but on the left of the second air-gap 109-2 right-hand member.First piezoelectricity
Layer 104-1 right-hand members are located on the right side of the first air-gap 109-1 right-hand member but on the left of first electrode 103-1 right-hand member, the second pressure
Electric layer 104-2 right-hand members are located on the right side of the second air-gap 109-2 right-hand member but on the left of second electrode 103-2 right-hand members；3rd electricity
Pole 105-1 left ends can be with the first piezoelectric layer 104-1 left end flush, it is preferable that the 3rd electrode 105-1 be located at the first piezoelectricity
On the right side of layer 104-1 left ends but on the left of the first air-gap 109-1 right-hand members, the 4th electrode 105-2 left end is located at the second piezoelectricity
On the right side of layer 104-2 left end but on the left of the second air-gap 109-2 right-hand member, it is empty that the 3rd electrode 105-1 right-hand members are located at first
On the right side of air gap 109-1 right-hand members but on the left of the first piezoelectric layer 104-1 right-hand members, the 4th electrode 105-2 right-hand members are located at the second air
On the right side of gap 109-2 right-hand members but on the left of the second piezoelectric layer 104-2 right-hand members；First passivation layer 106-1 covering first electrodes 103-
1st, the first piezoelectric layer 104-1, the 3rd electrode 105-1 right-hand member marginal portion, specifically, the first passivation layer 106-1 left end position
On the left of right-hand member right-hand member in the first air-gap 109-1 but the right-hand member positioned at the 3rd electrode；The electricity of second passivation layer 106-2 coverings second
Pole 103-2, the second piezoelectric layer 104-2, the 4th electrode 105-2 right-hand member marginal portion, specifically, the second passivation layer 106-2's
Left end is located on the right side of the second air-gap 109-2 right-hand member but on the left of the 4th electrode 105-2 right-hand member.In addition, for simultaneously
Adjoining two FBAR formed, the first passivation layer 106-1 right-hand member is located at second electrode 103-2 left ends
Right side but on the left of the second air-gap 109-2 left ends, and covering part substrate and second electrode 103-2 left end edge part
Point.
FBAR also includes extraction electrode solder joint, wherein the first solder joint 107-1 is located at the first film body sound
On the first electrode 103-1 of wave resonator, the second solder joint 107-3 is by the Top electrode (i.e. the 4th electrode 105-2) of the second resonator
It is drawn out on silicon chip 101 and forms the second solder joint, in this embodiment, in addition to by the first film bulk acoustic wave resonator and the second film
The connection electrode 107-2 that bulk acoustic wave resonator is interconnected, specifically, connection electrode 107-2 left ends are located at the first air-gap
On the right side of 109-1 right-hand members but on the left of the first passivation layer 106-1 left ends, connection electrode 107-2 right-hand members are located at the first passivation layer
On the right side of 106-1 right-hand members but on the left of the second air-gap 109-2 left ends, by the top electrode of the first resonator and the second resonator
Hearth electrode be interconnected.In the present embodiment, the first solder joint 107-1, the second solder joint 107-3, connection electrode 107-2 can
To be common metal material, the laminated film or tungsten material of chromium and gold are commonly used.
In other embodiment, also including the use of organic material, such as polyimides, at least by the 110- in Fig. 1
1 and 110-2 area covers, to suppress the resonance in 110-1 and 110-2 regions.Specifically, 110-1 regions refer to that first is empty
Air gap 109-1 right side edge to the region between the 3rd electrode 105-1 right side edge, 110-2 regions refers to that second is empty
Air gap 109-2 right side edge is to the region between the 4th electrode 105-2 right side edge.
Embodiment 2
Fig. 2 is a kind of preparation technology flow chart of FBAR of the embodiment of the present invention, the preparation flow bag
Include：
(a)：Prepare the silicon chip 101 of single or double polishing, wherein polishing upwardly, carry out standard cleaning.
(b)：Silicon chip 101 is performed etching, sacrifice layer hole is formed, wherein etching can use dry etching；In silicon chip
101 surface deposition of sacrificial layer, such as be phosphorosilicate glass PSG, be fully filled with sacrifice layer hole；To the sacrifice layer on the surface of silicon chip 101
CMP planarization is carried out, the sacrifice layer on the surface of silicon chip 101 is thrown except clean completely, figure, wherein 102-1 as shown in Fig. 2 (b) is formed
With sacrifice layer holes of the 102-2 for the full PSG of filling.
(c)：Bottom electrode layer 103, piezoelectric thin film layer 104 and upper electrode layer 105 are continuously sequentially depositing on the surface of silicon chip 101,
Form the figure as shown in Fig. 2 (c).In the present embodiment, depositional mode includes vacuum sputtering, thermal evaporation, ion plating etc., wherein pressing
The deposition of thin film layer also includes sol-gal process.The present invention uses and has continuously been sequentially depositing hearth electrode, piezoelectric thin film layer and top
The mode of electrode, can be avoided in traditional handicraft, at hearth electrode edge during rear redeposited piezoelectric membrane graphical for hearth electrode
Even there is the situation of crackle in the piezoelectric membrane growth quality difference of generation.
(d) top electrode, piezoelectric thin film layer and hearth electrode are patterned successively, form the figure as shown in Fig. 2 (d).
Wherein first electrode 103-1 is the hearth electrode of the resonator of left side first, and the first piezoelectric layer 104-1 is the piezoelectricity of the first resonator
Film, the 3rd electrode 105-1 is the top electrode of the first resonator；Second electrode 103-2 is the hearth electrode of the resonator of right side second,
Second piezoelectric layer 104-2 is the piezoelectric membrane of the second resonator, and the 4th electrode 105-2 is the top electrode of the second resonator.
(e) in the surface deposit passivation layer of silicon chip 101, and the first passivation layer 106-1 and the second passivation layer are graphically formed
Shown in 106-2, such as Fig. 2 (e).In the present embodiment, the mode of deposit passivation layer includes conventional all applicable patterns, such as
Using PECVD modes.Passivation layer in present embodiment mainly uses the insulating materials of some low-ks, can include nitrogen
SiClx film, silica, aluminium nitride etc..
(f) in the surface metal-layer of silicon chip 101 and graphical, solder joint metal level or interconnection metal to form resonator
Layer, in the present embodiment including forming the first solder joint 107-1, connecting the top electrode of the first resonator and the bottom of the second resonator
The interconnection 107-2 of electrode and the second solder joint 107-3, such as Fig. 2 (f) are shown.Metal level in present embodiment can include
Chromium gold composite membrane or W film.
(g) in the surface deposition of organic thin film of silicon chip 101, such as polyimides and graphical is formed as shown in Fig. 2 (g)
Figure.
(h) by the disk completed after technological process (g) be put into sustained release hydrofluoric acid corrosion sacrifice layer hole 102-1 and
Sacrifice layer, such as PSG in 102-2, complete the release of sacrifice layer, form final resonator, shown in such as Fig. 2 (h), complete whole
The preparation of individual resonator.
Wherein, step (g) is optional step, and step (h) can be directly performed after (f) step is completed.Polyimides 108-
1 and 108-2 is completely covered such as 110-1 in Fig. 1 and the region represented by 110-2 respectively.110-1 regions refer to first in Fig. 1
Air-gap 109-1 right side edge to the region between the 3rd electrode 105-1 right side edge, 110-2 regions refers to second
Air-gap 109-2 right side edge is to the region between the 4th electrode 105-2 right side edge.110-1 regions and 110-2 areas
Domain is due to containing hearth electrode, piezoelectric membrane and top electrode, it is understood that there may be parasitic resonance, is harmful to the resonator of design
Energy.Sponged by the polyimides 108-1 and 108-2 of the covering spurious resonance that can be harmful to this part, it is to avoid to design
Resonator behavior impact.
It should be noted last that, the above embodiments are merely illustrative of the technical solutions of the present invention and it is unrestricted, although ginseng
The present invention is described in detail according to preferred embodiment, it will be understood by those within the art that, can be to the present invention
Technical scheme modify or equivalent substitution, without departing from the spirit and scope of technical solution of the present invention.
Claims (10)
1. a kind of preparation method of FBAR, it is characterised in that comprise the following steps：
(a)：Silicon chip is performed etching, sacrifice layer hole is formed, in silicon substrate surface deposition of sacrificial layer, fills up the sacrifice layer
Hole；
(b)：The sacrifice layer of silicon substrate surface is polished, the sacrifice layer of silicon substrate surface is thrown except clean；
(c)：Bottom electrode layer, piezoelectric thin film layer and top electrode layer are sequentially depositing in silicon substrate surface；
(d)：Graphical top electrode, piezoelectric thin film layer, bottom electrode layer successively, and it is graphical after top electrode, piezoelectricity are thin from top to bottom
Film layer, bottom electrode layer area successively increase, form stepped edge structure, the patterned top electrode, piezoelectric thin film layer, bottom
Electrode layer constitutes the FBAR of piezoelectricity sandwich structure.
2. the preparation method of FBAR according to claim 1, it is characterised in that also including following step
Suddenly：
Deposit passivation layer is simultaneously graphical, and the passivation layer covers a lateral edges of the piezoelectricity sandwich structure.
3. the preparation method of FBAR according to claim 1, it is characterised in that also including following step
Suddenly：
Deposit interconnecting metal layer and graphical, the interconnecting metal layer forms solder joint metal or connection adjacent films through graphical
The interconnection electrode of bulk acoustic wave resonator.
4. the preparation method of FBAR according to claim 1, it is characterised in that also including following step
Suddenly：
Deposition of organic thin film layer is simultaneously graphical, and the patterned organic thin film layer covers edge to the institute of the sacrifice layer hole
State the ipsilateral penumbra region of sandwich structure top electrode.
5. the preparation method of FBAR according to claim 4, it is characterised in that：The organic film bag
Include polyimides.
6. the preparation method of FBAR according to claim 1, it is characterised in that also including following step
Suddenly：
Releasing sacrificial layer, forms the air-gap of the FBAR.
7. a kind of FBAR, it is characterised in that：The resonator includes the silicon chip with air-gap and is covered in
Piezoelectricity sandwich structure on the air-gap；The piezoelectricity sandwich structure includes top electrode, piezoelectric and hearth electrode, its
Middle top electrode, piezoelectric, hearth electrode are stacked gradually；The top electrode, the piezoelectric, the hearth electrode are each complete
It is graphical one by one again after deposition, and it is graphical after from top to bottom top electrode, piezoelectric thin film layer, bottom electrode layer area successively increase,
The edge of the piezoelectricity sandwich structure is in step-like；The wherein side stepped edge of the piezoelectricity sandwich structure is respectively positioned on
The outside at homonymy air-gap edge.
8. FBAR according to claim 7, it is characterised in that：Also include passivation layer, the passivation layer
Covering is located at the stepped edge on the outside of the air-gap edge.
9. FBAR according to claim 7, it is characterised in that：Also include organic thin film layer, it is described to have
Machine film layer covers the top electrode edge for the stepped edge that the piezoelectricity sandwich structure is located on the outside of the air-gap edge
To the region at homonymy air-gap edge.
10. a kind of wave filter, including FBAR or claim 7- prepared by claim any one of 1-6
FBAR described in 9 any one.
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