CN105703732A - Method for preparing film bulk acoustic wave resonator on the basis of monocrystal AlN - Google Patents
Method for preparing film bulk acoustic wave resonator on the basis of monocrystal AlN Download PDFInfo
- Publication number
- CN105703732A CN105703732A CN201610028451.5A CN201610028451A CN105703732A CN 105703732 A CN105703732 A CN 105703732A CN 201610028451 A CN201610028451 A CN 201610028451A CN 105703732 A CN105703732 A CN 105703732A
- Authority
- CN
- China
- Prior art keywords
- aln
- fbar
- single crystal
- film
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 230000012010 growth Effects 0.000 claims abstract description 23
- 238000000151 deposition Methods 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 9
- 230000008021 deposition Effects 0.000 claims abstract description 5
- 239000013078 crystal Substances 0.000 claims description 31
- 239000010409 thin film Substances 0.000 claims description 28
- 238000005530 etching Methods 0.000 claims description 9
- 238000004549 pulsed laser deposition Methods 0.000 claims description 9
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000002679 ablation Methods 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000003344 environmental pollutant Substances 0.000 claims description 2
- 231100000719 pollutant Toxicity 0.000 claims description 2
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 239000012528 membrane Substances 0.000 description 8
- 238000004891 communication Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000007773 growth pattern Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 210000001787 dendrite Anatomy 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000010406 interfacial reaction Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000006902 nitrogenation reaction Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 230000010356 wave oscillation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
Abstract
The invention discloses a method for preparing film bulk acoustic wave resonator on the basis of a monocrystal AlN. The method comprises the following steps of: growing (111) an oriented monocrystal Al film on a preparation substrate by using a molecular beam epitaxial growth method; growing (002) an oriented monocrystal AlN film on the oriented monocrystal Al film by using a pulse laser deposition growth method; and depositing a layer of metallic film on the AlN film to form a Al/AlN/metal sandwich piezoelectric stack structure. The piezoelectric stack structure based on monocrystal AlN prepared by the method can be used for preparing the film bulk acoustic wave resonator. The piezoelectric performance of the monocrystal AlN film is superior to that of a polycrystal AlN piezoelectric film applied to film bulk acoustic wave resonator so that the quality factor and a valid electromechanical coupling factor of a device are increased.
Description
Technical field
The present invention relates to the FBAR preparation method of a kind of based single crystal AlN。
Background technology
Along with the fast development of wireless communication technology, increasing functional module is required to clamp-on in the close-packed wireless terminal of script。For mobile phone, it is no longer provided solely for basic speech communication function, and a large amount of compatible digital vedio recording, take pictures, the several functions such as MP3, GPS global positioning navigation, Wi-Fi, bluetooth。Simultaneously along with the development of 3G, 4G technology, communication system increasingly tends to multiband, present multiple types the form deposited, requiring that communication terminal can accept each frequency range to meet different service providers and area demand, this just forces the RF transceiver (radio-frequency front-end) of mobile phone to develop to microminiaturized, integrated direction。
FBAR (FilmBulkAcousticResonator, it is called for short " FBAR ") it is the solution of a kind of brand-new radio-frequency filter, by multiple FBAR cascades just being met the technology requirement of mid frequency radio-frequency filter from 600MHz to 6GHz。FBAR has the unrivaled volume advantage of Ceramic Dielectric Filter, the unrivaled operating frequency of SAW filter and power capacity advantage, in addition also have low in energy consumption, quality factor (Q-value) output frequency signal high, direct, can with the feature such as CMOS technology is compatible, the device having become as radio-frequency communication field at present important is widely used。
The core texture of FBAR is the sandwich structure that electrode-piezoelectric membrane-electrode is constituted, and its operation principle is that the bulk acoustic wave utilizing piezoelectric membrane encourage under electric field action vibrates back and forth in piezoelectrics and realizes resonance。When applying certain alternating voltage when the surface of metal electrode up and down of piezoelectric membrane, the piezoelectric film material of layer of mediating produces mechanical deformation due to inverse piezoelectric effect, piezoelectric thin film layer is made to produce to expand, shrink along with electric field change, this mechanical vibratory excitation goes out the bulk acoustic wave propagated along film thickness direction (c-axis), will reflect when this sonic propagation is to the interface place of upper/lower electrode and air, roundtrip in thin film, forms vibration。Standing wave oscillation is formed when sound wave propagation in piezoelectric membrane is exactly the odd-multiple of half-wavelength。
The core technology being prepared by FBAR of piezoelectric membrane。The piezoelectric of FBAR generally adopts ZnO, PZT, AlN。Wherein AlN compares other bi-materials and has that longitudinal wave velocity is big, temperature coefficient is low, inherent loss is little, chemical stability is good, it is possible to the standard CMOS process feature such as compatible mutually, be piezoelectric film material the most frequently used at present。The polymorph A lN thin film prepared based on magnetron sputtering in existing technique is usually present certain thickness amorphous transition district, this section of region there is no contribution for piezoelectricity conversion, along with operating frequency raises, piezoelectric layer is made to more and more thinner, the piezoelectric film thickness of preferred orientation will reduce with the ratio of non-crystalline areas transition thickness, the Q-value causing FBAR is reduced by this, and insertion loss becomes big；The crystal boundary additionally existed in polymorph A lN and defect can cause the absorption to bulk acoustic wave or scattering, increase sonic transmissions loss。
The ultimate principle of magnetically controlled sputter method is the lotus energy particle bombardment target surface under utilizing crossed electric and magnetic field to control in a vacuum, makes the particle pounded at deposited on substrates。The orientation of the AlN thin film that this sputtering method obtains is subject to the impact of the technological parameters such as reaction pressure, sputtering power and substrate temperature。The growth course of AlN thin film is roughly divided into three phases: amorphous layer, and nucleation, competition are grown up district, dendrite district。The surface topography of analysis AlN thin film and crystalline orientation are it is recognised that along with the optimization of process conditions, the size of surface island is increasing, and thin film is increasingly turned to (002) preferred orientation by polycrystalline structure, namely tend to the growth of c-axis direction。Wherein the AlN thin film pine-tree structure of formation c-axis orientation is helpful by the amorphous layer of about about the 5nm of early growth period, and this floor amorphous transition district there is no contribution for piezoelectricity conversion；The crystal boundary additionally existed in polymorph A lN and defect can cause the absorption to bulk acoustic wave or scattering, increase sonic transmissions loss。Be can only obtain the polymorph A lN thin film of higher c-axis preferred orientation by magnetically controlled sputter method, and fast deposition cannot form high-quality single crystal AlN thin film。To sum up, the performance of the AlN polycrystal film that existing FBAR preparation technology magnetron sputtering obtains also has very big room for promotion。
Summary of the invention
Based on this, it is an object of the invention to overcome the defect of prior art, the preparation method that the FBAR of a kind of based single crystal AlN is provided, adopt this preparation method, preparation process can realize the preparation of single crystal AlN thin film, promote the quality factor of piezoelectric membrane, thus promoting the filtering performance of FBAR device。
For achieving the above object, the present invention takes techniques below scheme:
The concrete preparation method of FBAR of based single crystal AlN is as follows:
Clean, annealing prepares substrate, over the substrate by the molecular beam epitaxy growth monocrystalline Al hearth electrode as FBAR；
Continue to pass through the single crystal AlN thin film piezoelectric layer as FBAR of pulsed laser deposition growth method epitaxial growth (002) orientation on metal single crystal Al (111) substrate；
Deposition layer of metal is as top electrode over the piezoelectric layer；
Air chamber is gone out at silicon back-etching。
The FBAR of based single crystal AlN, it includes preparing substrate, air chamber, bottom electrode layer, piezoelectric membrane and top electrode, forms above-mentioned electrode-piezoelectric layer-electrode sandwich structure。
Preparation method provided by the present invention, by molecular beam epitaxial method preparing the monocrystalline Al thin film in (111) direction of Grown as the hearth electrode of FBAR, continue through the high quality single crystal AlN thin film of (002) orientation of pulsed laser deposition growth method growth as piezoelectric layer。The piezoelectric membrane that this preparation method obtains has high c-axis orientation, overcomes the loss to sonic transmissions of AlN polycrystal film that existing preparation technology obtains, improves quality factor and the effective electro-mechanical couple factor of FBAR device。
It is that the high power pulsed laser that pulse laser produces is focused on target material surface that pulsed laser deposition prepares the ultimate principle of thin film so that it is surface produces high temperature and ablation, and produces High Temperature High Pressure plasma (T > 10 further4K), plasma (in nitrogen atmosphere), to substrate transport, finally transports that the ablation thing on substrate condenses on substrate, nucleation is to film forming。High energy pulse deposition and the nitrogenation of one side pulsed laser deposition inhibit interfacial reaction, are conducive to the AlN monocrystal thin films of preparation near-zero boundary layer；When merging between island in thin film growth process on the other hand, a large amount of for generation dislocations are discharged stress by interface。Adopting pulsed laser deposition growth method extension AlN thin film is two-dimensional layer growth pattern, because pulsed laser deposition has high energy and pulse double effect, high energy efficiency should make particle easily overcome energy barrier, is conducive to the inter-level diffusion of particle and spreads along island；Pulse effects makes particle have enough relaxation time diffusive migrations when pulse is interrupted to equilbrium position, is all conducive to the two-dimensional layer of thin film to grow, until ultimately forming the AlN monocrystal thin films of high uniformity。
Preparation method provided by the present invention, molecular beam deposition method is adopted first to grow the monocrystalline Al thin film in one layer of (111) direction in preparation substrate Si (111), owing to the lattice mismatch in Si (111) face Yu Al (111) face only has 0.9%, substantially reduce Direct precipitation AlN brings on a si substrate mismatch and dislocation；Al is as the cushion of the single crystal AlN thin film continuing through pulsed laser deposition growth (002) orientation on the other hand, for suppressing nitrogenizing of substrate surface, stops the generation important role of polycrystalline；Al atom is less at the mobility of substrate surface, and the growth pattern of AlN thin film trends towards island growth, it is possible to effectively obtains the single crystal AlN thin film of high c-axis preferred orientation, is just being an up the key of FBAR piezoelectric property；Tuning monocrystalline Al thin film can as the bottom electrode layer of FBAR to suitable thickness。
Described top electrode adopts photoetching process to obtain corresponding figure。
Described dry or wet silicon back-etching, needs to do the regional protectionism that corresponding mask will need not etch before etching。
The effect of the present invention:
The FBAR preparation method of the based single crystal AlN that the present invention proposes, compared with existing preparation method, is greatly improved the crystal mass of piezoelectric membrane。Existing FBAR preparation technology is many obtains polymorph A lN thin film by sputtering, the present invention propose preparation method then prepare on substrate adopt molecular beam epitaxial method obtain metal single crystal Al (111) as hearth electrode, continue through pulse laser sediment method and deposit the single crystal AlN of (002) orientation thereon, improve quality factor and the effective electro-mechanical couple factor of resonator by improving the crystal mass of piezoelectric film, thus improve with this resonator be elementary cell wave filter, duplexer, the related device such as sensor performance。
Accompanying drawing explanation
Fig. 1 is the profile of depositing monocrystalline Al on a si substrate in embodiment 1。
Fig. 2 be in embodiment 1 on monocrystalline Al the sectional view of depositing monocrystalline nitride aluminium lamination。
Fig. 3 is the sectional view after sputtering top electrode in embodiment 1 on aln layer。
Fig. 4 is the sectional view that in embodiment 1, etching forms back side air chamber。
Wherein: 1.Si substrate；2. monocrystalline Al；3. single crystal AlN；4. top electrode。
Detailed description of the invention
The present invention is described in detail below in conjunction with the drawings and specific embodiments。
Embodiment 1
A kind of FBAR of based single crystal AlN, prepared by the method for being prepared by:
One, Grown hearth electrode is being prepared。
1, clean: select (111) face Si substrate 1 by dense H2SO4: H2O2: H2O (3:1:1) and BOE:HF (20:1) cleans, and removes surface organic matter。
2, annealing: placing the substrate in pressure is 3.0X10-10In the fine vacuum growth room of Torr, high-temperature baking 30-60min at 750 DEG C, remove the pollutant of substrate surface。
3, epitaxial growth Al cushion: underlayer temperature is 750 DEG C, the Al source of MBE, obtain Al layer, thickness range 30-300nm after growing monocrystalline Al2,30min at 1050-1150 DEG C。
4, photoetching, hearth electrode figure is etched, as shown in Figure 1。
Two, on hearth electrode, piezoelectric layer is grown。
5, it is 750 ° at underlayer temperature, when chamber pressure is 4mTorr, is 3.0J/cm with energy2And KrF excimer laser (λ=248nm, t=20ns) ablation high-purity AlN (4N) target that repetition rate is 30Hz, at 750-850 DEG C, grow the high quality single crystal AlN3 of 0.5-5 μ m-thick。
6, photoetching, single crystal AlN piezoelectric layer figure is etched, as shown in Figure 2。
Three, top electrode is grown over the piezoelectric layer。
7, sputtering sedimentation metal Mo is as top electrode 4, and thickness is 30-300nm, and etches top electrode figure, as shown in Figure 3。
Four, etching forms back side air chamber。
8, adopting double-sided alignment art lithography, development obtains back of the body etching window figure, and dry etching goes out back side air chamber, as shown in Figure 4。
Embodiment described above only have expressed the several embodiments of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention。It should be pointed out that, for the person of ordinary skill of the art, without departing from the inventive concept of the premise, it is also possible to making some deformation and improvement, these broadly fall into protection scope of the present invention。Therefore, the protection domain of patent of the present invention should be as the criterion with claims。
Claims (6)
1. the preparation method of the FBAR of a based single crystal AlN, it is characterised in that comprise the following steps:
Clean, annealing prepares substrate Si (111), over the substrate by the molecular beam epitaxy growth monocrystalline Al hearth electrode as FBAR；
Continue to pass through the single crystal AlN thin film piezoelectric layer as FBAR of pulsed laser deposition growth method epitaxial growth (002) orientation on metal single crystal Al (111) substrate；
Deposition layer of metal is as top electrode over the piezoelectric layer；
Air chamber is gone out at silicon back-etching。
2. the preparation method of the FBAR of a kind of based single crystal AlN according to claim 1, it is characterised in that the concrete grammar of annealing is: placing the substrate in pressure is 3.0X10-10In the fine vacuum growth room of Torr, high-temperature baking 30-60min at 750 DEG C, remove the pollutant of substrate surface。
3. the preparation method of the FBAR of a kind of based single crystal AlN according to claim 1, it is characterized in that the concrete grammar of molecular beam epitaxy growth Al cushion is: underlayer temperature is 750 DEG C, the Al source of MBE, monocrystalline Al is grown at 1050-1150 DEG C, Al layer, thickness range 30-300nm is obtained after 30min。
4. the preparation method of the FBAR of a kind of based single crystal AlN according to claim 1, it is characterized in that the concrete grammar of the AlN thin film by pulsed laser deposition growth method epitaxial growth (002) orientation is: be 750 ° at underlayer temperature, when chamber pressure is 4mTorr, it is 3.0J/cm with energy2And KrF excimer laser (λ=248nm, t=20ns) ablation high-purity AlN (4N) target that repetition rate is 30Hz, at 750-850 DEG C, grow 0.5-5 μ m-thick AlN。
5. the preparation method of the FBAR of a kind of based single crystal AlN according to claim 1, it is characterized in that, depositing metal that a layer thickness is 30-300nm as top electrode by the method that sputters or deposit over the piezoelectric layer, described top electrode adopts photoetching process to obtain corresponding figure。
6. the preparation method of the FBAR of a kind of based single crystal AlN according to claim 1; it is characterized in that; gone out the air chamber of respective graphical by dry or wet etch at silicon back-etching, need before etching to do the regional protectionism that corresponding mask will need not etch。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610028451.5A CN105703732A (en) | 2016-01-18 | 2016-01-18 | Method for preparing film bulk acoustic wave resonator on the basis of monocrystal AlN |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610028451.5A CN105703732A (en) | 2016-01-18 | 2016-01-18 | Method for preparing film bulk acoustic wave resonator on the basis of monocrystal AlN |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105703732A true CN105703732A (en) | 2016-06-22 |
Family
ID=56227440
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610028451.5A Pending CN105703732A (en) | 2016-01-18 | 2016-01-18 | Method for preparing film bulk acoustic wave resonator on the basis of monocrystal AlN |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105703732A (en) |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106341094A (en) * | 2016-08-29 | 2017-01-18 | 中国科学院半导体研究所 | Bulk acoustic wave device preparation method |
| CN106341095A (en) * | 2016-08-31 | 2017-01-18 | 中国科学院半导体研究所 | On-metal monocrystal nitride film preparation method and bulk acoustic wave resonator |
| CN106374032A (en) * | 2016-11-14 | 2017-02-01 | 中国科学院半导体研究所 | Monocrystal sound wave device and manufacture method therefor |
| CN107171654A (en) * | 2017-06-14 | 2017-09-15 | 杭州左蓝微电子技术有限公司 | The FBAR and processing method combined based on solid-state and cavity |
| CN107196618A (en) * | 2017-02-16 | 2017-09-22 | 杭州左蓝微电子技术有限公司 | FBAR and preparation method thereof |
| CN107332561A (en) * | 2017-07-18 | 2017-11-07 | 上海示方科技有限公司 | A kind of signal inquires after device, Hydrogen Atom Frequency Standard |
| CN107508571A (en) * | 2017-09-22 | 2017-12-22 | 安徽安努奇科技有限公司 | The preparation method and piezo-electric resonator of a kind of piezo-electric resonator |
| CN107689781A (en) * | 2016-08-03 | 2018-02-13 | 三星电机株式会社 | The manufacture method of bulk acoustic wave resonator, wave filter and bulk acoustic wave resonator |
| CN109302158A (en) * | 2018-08-01 | 2019-02-01 | 河源市众拓光电科技有限公司 | A kind of thin film bulk acoustic wave resonator and preparation method thereof |
| CN109309483A (en) * | 2018-10-10 | 2019-02-05 | 华南理工大学 | A kind of preparation method of support type thin film bulk acoustic wave resonator |
| WO2019056553A1 (en) * | 2017-09-22 | 2019-03-28 | 安徽安努奇科技有限公司 | Method for preparing piezoelectric resonator and piezoelectric resonator |
| CN111146328A (en) * | 2019-12-31 | 2020-05-12 | 诺思(天津)微系统有限责任公司 | Single crystal piezoelectric structure and electronic device having the same |
| CN111146327A (en) * | 2019-12-25 | 2020-05-12 | 诺思(天津)微系统有限责任公司 | Single crystal piezoelectric structure, method for manufacturing same, and electronic device having single crystal piezoelectric laminated structure |
| CN112038217A (en) * | 2020-09-11 | 2020-12-04 | 广东广纳芯科技有限公司 | AlN single crystal film growing method and surface acoustic wave resonator with same |
| CN114094970A (en) * | 2022-01-20 | 2022-02-25 | 深圳新声半导体有限公司 | Method for manufacturing film bulk acoustic wave resonator and resonator |
| US11463070B2 (en) | 2022-01-18 | 2022-10-04 | Shenzhen Newsonic Technologies Co., Ltd. | FBAR structure and manufacturing method of same |
| WO2022241033A1 (en) * | 2021-05-14 | 2022-11-17 | Raytheon Company | Epitaxial growth of aluminum on aluminum-nitride compounds |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020121405A1 (en) * | 2001-03-01 | 2002-09-05 | Ruby Richard C. | Method of fabricating thin film bulk acoustic resonator (FBAR) and FBAR structure embodying the method |
| CN101217266A (en) * | 2008-01-09 | 2008-07-09 | 电子科技大学 | A novel acoustic wave syntonizer and the corresponding preparation method |
| CN103022295A (en) * | 2012-12-11 | 2013-04-03 | 广州市众拓光电科技有限公司 | Aluminum nitride film growing on silicon substrate and preparation method and application thereof |
| CN103996763A (en) * | 2014-05-30 | 2014-08-20 | 广州市众拓光电科技有限公司 | LED epitaxial wafer growing on metal Al substrate and preparing method and application thereof |
| CN103996605A (en) * | 2014-05-30 | 2014-08-20 | 广州市众拓光电科技有限公司 | Pulsed laser deposition and molecular beam epitaxy combined coating device and application thereof |
-
2016
- 2016-01-18 CN CN201610028451.5A patent/CN105703732A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020121405A1 (en) * | 2001-03-01 | 2002-09-05 | Ruby Richard C. | Method of fabricating thin film bulk acoustic resonator (FBAR) and FBAR structure embodying the method |
| CN1373556A (en) * | 2001-03-01 | 2002-10-09 | 安捷伦科技有限公司 | Improved method for mfg. thin film sound resonator and thin film sound resonator structure of carrying out said method |
| CN101217266A (en) * | 2008-01-09 | 2008-07-09 | 电子科技大学 | A novel acoustic wave syntonizer and the corresponding preparation method |
| CN103022295A (en) * | 2012-12-11 | 2013-04-03 | 广州市众拓光电科技有限公司 | Aluminum nitride film growing on silicon substrate and preparation method and application thereof |
| CN103996763A (en) * | 2014-05-30 | 2014-08-20 | 广州市众拓光电科技有限公司 | LED epitaxial wafer growing on metal Al substrate and preparing method and application thereof |
| CN103996605A (en) * | 2014-05-30 | 2014-08-20 | 广州市众拓光电科技有限公司 | Pulsed laser deposition and molecular beam epitaxy combined coating device and application thereof |
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107689781A (en) * | 2016-08-03 | 2018-02-13 | 三星电机株式会社 | The manufacture method of bulk acoustic wave resonator, wave filter and bulk acoustic wave resonator |
| CN106341094A (en) * | 2016-08-29 | 2017-01-18 | 中国科学院半导体研究所 | Bulk acoustic wave device preparation method |
| CN106341095A (en) * | 2016-08-31 | 2017-01-18 | 中国科学院半导体研究所 | On-metal monocrystal nitride film preparation method and bulk acoustic wave resonator |
| CN106341095B (en) * | 2016-08-31 | 2020-04-07 | 中国科学院半导体研究所 | Method for preparing monocrystal nitride film on metal and bulk acoustic wave resonator |
| CN106374032A (en) * | 2016-11-14 | 2017-02-01 | 中国科学院半导体研究所 | Monocrystal sound wave device and manufacture method therefor |
| CN107196618A (en) * | 2017-02-16 | 2017-09-22 | 杭州左蓝微电子技术有限公司 | FBAR and preparation method thereof |
| CN107171654A (en) * | 2017-06-14 | 2017-09-15 | 杭州左蓝微电子技术有限公司 | The FBAR and processing method combined based on solid-state and cavity |
| CN107332561A (en) * | 2017-07-18 | 2017-11-07 | 上海示方科技有限公司 | A kind of signal inquires after device, Hydrogen Atom Frequency Standard |
| WO2019056553A1 (en) * | 2017-09-22 | 2019-03-28 | 安徽安努奇科技有限公司 | Method for preparing piezoelectric resonator and piezoelectric resonator |
| CN107508571A (en) * | 2017-09-22 | 2017-12-22 | 安徽安努奇科技有限公司 | The preparation method and piezo-electric resonator of a kind of piezo-electric resonator |
| CN109302158A (en) * | 2018-08-01 | 2019-02-01 | 河源市众拓光电科技有限公司 | A kind of thin film bulk acoustic wave resonator and preparation method thereof |
| CN109302158B (en) * | 2018-08-01 | 2021-07-16 | 广州市艾佛光通科技有限公司 | Film bulk acoustic resonator and preparation method thereof |
| CN109309483A (en) * | 2018-10-10 | 2019-02-05 | 华南理工大学 | A kind of preparation method of support type thin film bulk acoustic wave resonator |
| CN111146327A (en) * | 2019-12-25 | 2020-05-12 | 诺思(天津)微系统有限责任公司 | Single crystal piezoelectric structure, method for manufacturing same, and electronic device having single crystal piezoelectric laminated structure |
| CN111146328A (en) * | 2019-12-31 | 2020-05-12 | 诺思(天津)微系统有限责任公司 | Single crystal piezoelectric structure and electronic device having the same |
| CN112038217A (en) * | 2020-09-11 | 2020-12-04 | 广东广纳芯科技有限公司 | AlN single crystal film growing method and surface acoustic wave resonator with same |
| CN112038217B (en) * | 2020-09-11 | 2021-07-16 | 广东广纳芯科技有限公司 | AlN single crystal film growing method and surface acoustic wave resonator with same |
| WO2022241033A1 (en) * | 2021-05-14 | 2022-11-17 | Raytheon Company | Epitaxial growth of aluminum on aluminum-nitride compounds |
| US11463070B2 (en) | 2022-01-18 | 2022-10-04 | Shenzhen Newsonic Technologies Co., Ltd. | FBAR structure and manufacturing method of same |
| CN114094970A (en) * | 2022-01-20 | 2022-02-25 | 深圳新声半导体有限公司 | Method for manufacturing film bulk acoustic wave resonator and resonator |
| CN114094970B (en) * | 2022-01-20 | 2022-05-17 | 深圳新声半导体有限公司 | Method for manufacturing film bulk acoustic wave resonator and resonator |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105703732A (en) | Method for preparing film bulk acoustic wave resonator on the basis of monocrystal AlN | |
| CN109309483B (en) | Preparation method of support type film bulk acoustic resonator | |
| CN106899275B (en) | Acoustic wave resonator and method for manufacturing the same | |
| JP2001094373A (en) | Thin film resonator and method for manufacturing it | |
| WO2021109444A1 (en) | Bulk acoustic resonator, fabrication method therefor, filter and electronic device | |
| CN105703733A (en) | Method for preparing solid assembled film bulk acoustic wave resonator | |
| CN109560785B (en) | Lamb wave resonator and preparation method thereof | |
| Hou et al. | A review: Aluminum nitride MEMS contour-mode resonator | |
| Ansari | Single crystalline scandium aluminum nitride: An emerging material for 5G acoustic filters | |
| US20170288628A1 (en) | Acoustic resonator including monolithic piezoelectric layer having opposite polarities | |
| US11949400B2 (en) | Multiple layer system, method of manufacture and saw device formed on the multiple layer system | |
| CN111446944A (en) | Air gap type film bulk acoustic resonator beneficial to integration and preparation method thereof | |
| CN106341095B (en) | Method for preparing monocrystal nitride film on metal and bulk acoustic wave resonator | |
| Yi et al. | High-quality film bulk acoustic resonators fabricated on AlN films grown by a new two-step method | |
| CN113285014A (en) | Single crystal doped film, piezoelectric film for acoustic wave resonator and preparation method thereof | |
| CN109560784B (en) | Lamb wave resonator and preparation method thereof | |
| CN207218649U (en) | A kind of low-stress state single crystal AlN being grown on substrate | |
| CN113193846B (en) | Film bulk acoustic resonator with hybrid transverse structural features | |
| CN107425821B (en) | Low-stress-state monocrystalline AlN for acoustic wave device and preparation and application thereof | |
| CN212163290U (en) | Scandium-doped aluminum nitride lamb wave resonator | |
| WO2020062364A1 (en) | Thin-film bulk acoustic resonator and manufacturing method therefor | |
| CN104917476B (en) | Method for manufacturing acoustic wave resonator | |
| CN107385394B (en) | ZnO/AlN/Si multilayer films and preparation method and application | |
| CN116865703A (en) | Transverse coupling FBAR, preparation method thereof and communication equipment | |
| WO2019228750A1 (en) | Method of manufacturing a bulk acoustic wave resonator and bulk acoustic wave resonator device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20160622 |
|
| WD01 | Invention patent application deemed withdrawn after publication |