CN111146328A - Single crystal piezoelectric structure and electronic device having the same - Google Patents

Single crystal piezoelectric structure and electronic device having the same Download PDF

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Publication number
CN111146328A
CN111146328A CN201911424774.6A CN201911424774A CN111146328A CN 111146328 A CN111146328 A CN 111146328A CN 201911424774 A CN201911424774 A CN 201911424774A CN 111146328 A CN111146328 A CN 111146328A
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electrode
layer
single crystal
piezoelectric
pin
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Inventor
庞慰
张孟伦
杨清瑞
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ROFS Microsystem Tianjin Co Ltd
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ROFS Microsystem Tianjin Co Ltd
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Priority to CN201911424774.6A priority Critical patent/CN111146328A/en
Priority to PCT/CN2020/088724 priority patent/WO2021135014A1/en
Publication of CN111146328A publication Critical patent/CN111146328A/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
    • H10N30/057—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes by stacking bulk piezoelectric or electrostrictive bodies and electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
    • H10N30/063—Forming interconnections, e.g. connection electrodes of multilayered piezoelectric or electrostrictive parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/871—Single-layered electrodes of multilayer piezoelectric or electrostrictive devices, e.g. internal electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0257—Microphones or microspeakers

Abstract

The present invention relates to a single crystal piezoelectric structure, and an electronic device having the single crystal piezoelectric structure. The single crystal piezoelectric structure includes: a plurality of piezoelectric layers, each piezoelectric layer being a single crystal piezoelectric layer; the upper side and the lower side of each piezoelectric layer are provided with electrodes, and the piezoelectric layers and the electrodes form a laminated structure laminated in the thickness direction of the single crystal piezoelectric structure; a substrate on which the laminated structure is disposed; an acoustic mirror located below the stacked structure, wherein: the overlapping areas of the piezoelectric layers, the electrodes and the acoustic mirror in the thickness direction of the piezoelectric layers form an effective area; each electrode has an electrode connection portion arranged in the same layer as the electrode; the layer structure on the upper side of the electrode connection portion of at least one of the other electrodes except the top electrode on the top layer among the plurality of electrodes is removed to expose the electrode connection portion. The piezoelectric element can further comprise a cross-over electrode pin, the upper end of the cross-over electrode pin is electrically connected with the corresponding electrode, and at least one piezoelectric layer is cross-over connected between the upper end and the lower end.

Description

Single crystal piezoelectric structure and electronic device having the same
Technical Field
Embodiments of the present invention relate to the field of semiconductors, and in particular, to a single crystal piezoelectric structure and an electronic device having the same.
Background
MEMS (Micro-Electro-Mechanical System) is a short term for Micro-Electro-Mechanical systems. The internal structural dimensions of MEMS devices are typically on the micrometer or nanometer scale, while MEMS is a stand-alone intelligent system. MEMS devices are capable of converting one form of energy to another, such as converting electrical energy to mechanical energy or converting mechanical energy to electrical energy. The MEMS transducer referred to in the present invention means a transducer capable of converting mechanical energy and electrical energy of an acoustic wave into each other. In general, MEMS devices require piezoelectric materials to achieve different forms of energy conversion. When an alternating electric field is applied to the piezoelectric material, the piezoelectric material will vibrate at the frequency of the applied alternating electric field, and if the frequency of the applied alternating electric field is exactly the resonant frequency of the MEMS device, the amplitude value will increase greatly, with higher energy conversion efficiency at that frequency and greater transmission sensitivity when the MEMS device is used as a transducer. On the other hand, when an acoustic wave is transmitted to the piezoelectric material, vibration and deformation of the piezoelectric material are caused, and this vibration in turn causes an alternating charge distribution on the both end electrodes of the piezoelectric material, and when the frequency of the acoustic wave is at the resonance frequency point of the MEMS device, there is a higher energy conversion efficiency at that frequency, and when the MEMS device is used as a transducer, there is a larger receiving sensitivity.
Most of piezoelectric film materials of the traditional piezoelectric MEMS device are prepared by physical or chemical deposition technologies such as magnetron sputtering and the like, and are polycrystalline piezoelectric films which have poor piezoelectric characteristics (mainly embodied by lower electromechanical coupling coefficient), high defect density (mainly embodied by lower quality factor), poor heat dissipation (mainly embodied by lower power capacity), and limited crystal orientation selection (the optimal crystal orientation and piezoelectric coefficient of the device design cannot be selected). These defects lead to insufficient performance of the polycrystalline piezoelectric MEMS device, such as low Q value, low sensitivity, and high insertion loss.
Furthermore, how to properly connect the different electrodes, electrically isolating the electrodes, e.g. how to electrically connect the top and bottom electrodes in case of isolating the intermediate electrode, needs to be solved as well.
Disclosure of Invention
The present invention has been made to mitigate or solve at least one of the above-mentioned problems in the prior art.
According to an aspect of an embodiment of the present invention, there is provided a single crystal piezoelectric structure including:
a plurality of piezoelectric layers, each piezoelectric layer being a single crystal piezoelectric layer;
the piezoelectric layer structure comprises a plurality of electrodes, a plurality of piezoelectric layers and a plurality of piezoelectric layers, wherein the electrodes are arranged on the upper side and the lower side of each piezoelectric layer, and the piezoelectric layers and the electrodes form a laminated structure laminated in the thickness direction of the single crystal piezoelectric structure;
a substrate on which the laminated structure is disposed;
an acoustic mirror, located below the laminated structure,
wherein:
the overlapping areas of the piezoelectric layers, the electrodes and the acoustic mirror in the thickness direction of the piezoelectric layers form the effective area of the single-crystal piezoelectric structure;
each electrode has an electrode connection portion arranged in the same layer as the electrode;
the layer structure on the upper side of the electrode connection portion of at least one of the other electrodes except the top electrode on the top layer among the plurality of electrodes is removed to expose the electrode connection portion.
Embodiments of the present invention also relate to an electronic device comprising the single crystal piezoelectric structure described above.
Drawings
These and other features and advantages of the various embodiments of the disclosed invention will be better understood from the following description taken in conjunction with the accompanying drawings, in which like reference characters designate like parts throughout, and in which:
FIG. 1 is a cross-sectional schematic view of a single crystal piezoelectric MEMS device in accordance with an exemplary embodiment of the present invention;
FIG. 2 is a cross-sectional schematic view of a single crystal piezo-electrically coupled resonator filter according to an exemplary embodiment of the present invention;
FIG. 3 is a schematic top view of the single crystal piezo-electrically coupled resonator filter of FIG. 2;
FIG. 4 is a cross-sectional schematic view of a single crystal piezoelectric MEMS device in which a cross-over electrode pin is provided in accordance with an exemplary embodiment of the present invention;
FIG. 5 is a cross-sectional schematic view of a single crystal piezoelectric MEMS device in which a cross-over electrode pin is provided in accordance with an exemplary embodiment of the present invention;
FIG. 6 is a cross-sectional schematic view of a single crystal piezoelectric MEMS device in which a cross-over electrode pin is provided in accordance with an exemplary embodiment of the present invention;
FIG. 7 is a cross-sectional schematic view of a single crystal piezoelectric MEMS device in which a cross-over electrode pin is provided in accordance with an exemplary embodiment of the present invention;
FIG. 8 is a cross-sectional schematic view of a single crystal piezo-electrically coupled resonator filter according to an exemplary embodiment of the present invention;
fig. 9 is a schematic sectional view of a single crystal piezoelectric coupled resonator filter obtained along the direction a-a in fig. 8;
fig. 10 is a cross-sectional view schematically illustrating a single crystal piezoelectric coupled resonator filter according to another exemplary embodiment of the present invention.
Detailed Description
The technical scheme of the invention is further specifically described by the following embodiments and the accompanying drawings. In the specification, the same or similar reference numerals denote the same or similar components. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the general inventive concept of the present invention and should not be construed as limiting the invention.
The invention provides an MEMS device structure using a single crystal piezoelectric film material. The single crystal piezoelectric film material can make up the defects of the traditional polycrystalline piezoelectric film material, and the piezoelectric MEMS processed and manufactured by the single crystal piezoelectric film material has larger electromechanical coupling coefficient, higher Q value, higher power capacity, higher sensitivity, lower insertion loss and the like. The device structure provided by the invention is a universal structure suitable for various single-crystal piezoelectric MEMS devices, and can be used for single-crystal piezoelectric MEMS Ultrasonic Transducers (Ultrasonic Transducers), single-crystal piezoelectric MEMS microphones (Microphone), single-crystal piezoelectric MEMS loudspeakers (Speaker), single-crystal piezoelectric MEMS hydrophones (hydrophones), single-crystal piezoelectric coupling Resonator filters (Coupled Resonator filters) and the like. Because the preparation mode of the single crystal piezoelectric film is different from that of the traditional polycrystalline piezoelectric film, the manufacturing method, the device structure and the like of the single crystal piezoelectric MEMS device are also greatly different from those of the traditional polycrystalline piezoelectric MEMS device.
FIG. 1 is a cross-sectional schematic view of a single crystal piezoelectric MEMS device in accordance with an exemplary embodiment of the present invention. In fig. 1, 01 is a substrate of the device; 10 is a cavity structure at the bottom of the device, in this embodiment, the cavity structure is a through hole penetrating through the substrate, and 10 is an acoustic mirror structure of the device, which may also be in other equivalent forms; 02 is the bottom electrode of the device; 03 is the first single crystal piezoelectric layer of the device; 04 is the middle electrode of the device; 05 is a second single crystal piezoelectric layer of the device; 06 is the top electrode of the device; a is an intermediate electrode connecting part; b is a bottom electrode connecting part.
In the present invention, the material of the first single crystal piezoelectric layer and the second single crystal piezoelectric layer may both be single crystal lithium niobate (LiNbO)3) A material. Other materials are also possible, such as monocrystalline lithium tantalate (LiTaO)3) At least one of single crystal aluminum nitride (AlN), Quartz (Quartz), single crystal lead zirconate titanate (PZT), lead magnesium niobate-lead titanate (PMN-PT). In the present invention, the electrode constituent material may be molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium, or a composite of these metals or an alloy thereof, or the like. The substrate may be silicon (Si), lithium niobate single crystal (LiNbO3), silicon carbide (SiC), sapphire (Al)2O3) Quartz (Quartz), etc.
Further, in fig. 1, a region where the top electrode, the second single crystal piezoelectric layer, the middle electrode, the first single crystal piezoelectric layer, the bottom electrode, and the cavity overlap in the vertical direction is an effective region of the device, as shown by a region D in fig. 1.
In order to improve the performance of the single crystal piezoelectric MEMS device, such as energy conversion efficiency, and facilitate reasonable connection of electrodes, in the invention, the area of the upper layer film structure is always smaller than or equal to that of the lower layer film structure. By means of processing methods such as photoetching and etching, the top electrode 06 and a part of the right side of the second single crystal piezoelectric layer 05 can be removed, and a part of the middle electrode 04 exposed is used as a middle electrode connecting part A; then, the top electrode 06, the second single crystal piezoelectric layer 05, the middle electrode 04, and a portion of the left side of the first single crystal piezoelectric layer 03 are etched away, and a portion of the bottom electrode 02 is exposed as a bottom electrode connection portion B. Further, with the structure shown in fig. 2, each corresponding electrode connecting portion may also be exposed in a similar manner as above.
In the present invention, referring to fig. 1, the bottom electrode connection part B is located at the left side of the effective area, and the middle electrode connection part a is located at the right side of the effective area. In the present invention, the electrode connecting portion is located on one side of the effective region, which means that it is located outside the effective region, and is located on the left or right side of the effective region in the drawing, for example.
In the embodiment of the invention, the structure of the single-crystal piezoelectric MEMS device is a five-layer thin film stacked structure, so that the energy conversion efficiency is doubled compared with that of a common three-layer structure. And because the materials used for the first piezoelectric layer and the second piezoelectric layer are all single crystal piezoelectric materials, the electromechanical coupling coefficient of the device is much higher than that of the common polycrystalline piezoelectric materials, and therefore, the corresponding single crystal piezoelectric MEMS device has higher transmitting and receiving sensitivity and lower insertion loss. The energy conversion efficiency of the single crystal piezoelectric MEMS device can be further optimized from the aspect of selecting the crystal directions of the piezoelectric layers, and the crystal directions of the first piezoelectric layer and the second piezoelectric layer are the same direction or opposite directions. It should be noted that the crystal orientation can be any selected orientation, because the single crystal thin film is characterized by providing a thin film with any crystal orientation according to the design requirements of the device; the polycrystalline piezoelectric film is not generally guaranteed only in a fixed crystal orientation direction, so that the polycrystalline piezoelectric film is difficult to provide a piezoelectric film combination with the crystal orientation in the same direction or opposite directions in any direction according to design requirements.
Fig. 2 is a schematic cross-sectional view of a single crystal piezoelectric coupled resonator filter according to still another exemplary embodiment of the present invention. The embodiment shown in fig. 2 is similar to the structure shown in fig. 1, except that in fig. 2, the intermediate electrode comprises two metal layers (i.e., electrodes 17 and 04) and a decoupling layer 16, forming a typical coupled resonator filter, i.e., formed by two resonators placed one above the other in the vertical direction and acoustically decoupled. In fig. 4, 10 is a cavity structure, which is a through-hole passing through a substrate 01; 02 is the bottom electrode of the first resonator; 03 is the single crystal piezoelectric layer of the first resonator; 04 is the top electrode of the first resonator; 16 is a decoupling layer which can be a single passivation layer or a plurality of passivation layers made of materials with different acoustic impedances; 17 is the bottom electrode of the second resonator; 05 is the single crystal piezoelectric layer of the second resonator; and 06 is the top electrode of the second resonator.
In addition, in the present embodiment, as shown in fig. 2, the area of the upper film is always equal to or smaller than the area of the lower film, which can expose the connection portion of each electrode layer. Where 07 is the electrode connection of the top electrode of the second resonator, C is the electrode connection of the bottom electrode of the second resonator, a is the electrode connection of the top electrode of the first resonator, and B is the electrode connection of the bottom electrode of the first resonator.
In the present embodiment, since the piezoelectric layer materials of the first resonator and the second resonator are single crystal piezoelectric materials, the electromechanical coupling coefficient, the quality factor, and the power capacity of the resonators can be improved, and the performance of the coupled resonator filter formed by the resonators, such as the insertion loss, the rejection rate of adjacent frequency bands, and the like, can also be greatly improved. Furthermore, since the single resonator is replaced by a pair of stacked resonators, the total area required to implement the filter is reduced, thus achieving a reduction in the minimum size and manufacturing cost, while the introduction of the decoupling layer allows the bandwidth of the filter to be much greater than other forms of filter architectures.
On the other hand, the structure of the embodiment of fig. 2 is also applicable to other single crystal piezoelectric MEMS devices, such as ultrasonic transducers, microphones, speakers, hydrophones, and the like. The decoupling layer 16 may act to increase the strain of the piezoelectric layers 05 and 03, thereby improving the transmit and receive sensitivity of the device.
Fig. 3 is a schematic top view of the single crystal piezo-electrically coupled resonator filter of fig. 2. In fig. 3, which clearly shows the electrode connection part of each resonator in the coupled resonator filter, it can be seen that the area of the upper layer film is always equal to or smaller than the area of the lower layer film from top to bottom. The left side of the top electrode 06 is the electrode connection part of the top electrode of the second resonator, C is the electrode connection part of the bottom electrode of the second resonator, a is the electrode connection part of the top electrode of the first resonator, and B is the electrode connection part of the bottom electrode of the first resonator.
In fig. 3, it can be seen that the electrode connection portion B of the bottom electrode includes both a portion on the left side (in fig. 2) of the active area and a portion on the right side of the active area.
As can be seen from fig. 2, the ends of the electrode connecting portions C and a are sequentially staggered on the right side of the effective area in the drawing so that the top surfaces of the electrode connecting portions C and a constitute a stepped surface. The sequential offset here indicates that the end of the electrode connecting portion in the lower layer is located outside the end of the electrode connecting portion in the upper layer. In the present invention, the outer side means a side farther from the center of the effective region in the lateral direction or the radial direction, and the inner side means a side closer to the center of the effective region in the lateral direction or the radial direction.
Although not shown, the electrode connection portions of all the electrodes or the electrode connection portions of other electrodes than the top electrode may be located at one side of the active area.
In the structure of the present invention, the vertical direction is defined with the base 01 as the lower side and the top electrode 06 as the upper side, and the upward surface of each layer is the upper surface and the downward surface of each layer is the lower surface.
In the present invention, each piezoelectric layer and its electrodes on both sides form a membrane structure, and each membrane structure has an upper electrode layer, a lower electrode layer, and a piezoelectric layer located between the upper electrode layer and the lower electrode layer. As can be appreciated, two thin-film structures adjacent in the thickness direction may share an electrode layer, for example, the lower electrode of the upper thin-film structure may serve as the upper electrode of the lower thin-film structure.
In the present invention, in the thickness direction of the single crystal piezoelectric structure, the area of at least one layer in the thin film structure located on the upper layer is not larger than the area of the corresponding layer (here, corresponding, for example, upper electrode layer to upper electrode layer, piezoelectric layer to piezoelectric layer, lower electrode layer to lower electrode layer) in the thin film structure located on the lower layer, and/or the area of the thin film structure of the upper layer as a whole is not larger than the area of the thin film structure of the lower layer as a whole; and/or the area of the upper electrode layer is less than or equal to that of the piezoelectric layer in each film structure. Further, in the thickness direction of the single crystal piezoelectric structure, the area of the piezoelectric layer located in the upper layer thin film structure is smaller than the area of the piezoelectric layer located in the lower layer thin film structure.
FIG. 4 is a cross-sectional schematic view of a single crystal piezoelectric MEMS device in which a cross-over electrode pin is disposed in accordance with an exemplary embodiment of the present invention. In fig. 4, 01 is a substrate, and 10 is a cavity, which is a through-hole structure passing through the substrate. 02 is a bottom electrode, 03 is a first single crystal piezoelectric layer, 04 is a middle electrode, 05 is a second single crystal piezoelectric layer, 06 is a top electrode, 07 is an electrode pin of the top electrode, and 08 is an electrode pin of the middle electrode. 12 and 13 are structures formed of a dielectric material that is either non-conductive or void, and the voids may be formed by isotropic wet or dry gas etching of the electrode layer.
In this embodiment, the structure 12 separates the electrode leads of the top electrode from the intermediate electrode in the overlapping region in the vertical direction of the device, thus avoiding the influence of parasitic capacitances therein. The structure 13 separates the electrode connection portion of the intermediate electrode from the bottom electrode in the overlapping region in the vertical direction of the device, thus avoiding the influence of parasitic capacitance therein. It is noted that in some piezoelectric MEMS device designs where the top and bottom electrodes are electrically connected, there is no parasitic capacitance present in the right-hand portion of fig. 4, since the two layers are electrically interconnected somewhere, at an equal potential.
In fig. 4, the upper end of the electrode pin 07 is electrically connected to the top electrode 06, the upper end of the electrode pin 08 is electrically connected to the middle electrode, the lower end of the electrode pin 07 is disposed on the same layer as and spaced apart from the middle electrode, and the lower end of the electrode pin 08 is disposed on the same layer as and spaced apart from the bottom electrode. In the example shown in fig. 4, the lower end of the electrode pin 07 and the end of the intermediate electrode 04 define the boundary of the structure 12 in the lateral direction, and the lower end of the electrode pin 08 and the end of the bottom electrode 02 define the boundary of the structure 13 in the lateral direction.
FIG. 5 is a cross-sectional schematic view of a single crystal piezoelectric MEMS device in which a cross-over electrode pin is disposed in accordance with an exemplary embodiment of the present invention. Fig. 5 differs from fig. 4 in that in the embodiment shown in fig. 5 there are voids or structures 14 and 15 of non-conductive dielectric material. In other words, there is a gap in the lateral direction between the electrode pin 07/08 and the edge of the stacked structure (where the top electrode, the second piezoelectric layer, the middle electrode, the first piezoelectric layer, and the bottom electrode are stacked) that extends from the upper end to the lower end of the crossover electrode pin, where the gaps are structures 14 and 15. In fig. 5, a portion between the upper and lower ends of the electrode pin 07/08 includes a vertical connection portion, and the gap exists between the vertical connection portion and the edge of the stacked structure in the lateral direction.
FIG. 6 is a cross-sectional schematic view of a single crystal piezoelectric MEMS device in which a cross-over electrode pin is disposed in accordance with an exemplary embodiment of the present invention. Fig. 6 is different from the structure shown in fig. 5 in that in fig. 6, during the formation of the structures 14 and 15 of air gaps or non-conductive dielectric materials, there are a plurality of small steps, so that a plurality of small steps form a plurality of height differences with smaller step heights, thereby effectively avoiding the problem that the steps directly cross from the electrode connecting part of the top electrode to the bottom to cause fracture. As shown in fig. 6, the portion between the upper and lower ends of the electrode pin 7/8 includes a plurality of stepped portions, and the gap (corresponding to the structures 14 and 15) exists between the stepped portions and the edge of the laminated structure in the lateral direction.
FIG. 7 is a cross-sectional schematic view of a single crystal piezoelectric MEMS device in which a cross-over electrode pin is disposed in accordance with an exemplary embodiment of the present invention. Similar to the structure of fig. 4, electrode pin 07 connects top electrode 06 and bottom electrode 02. In the embodiment shown in fig. 7, the top electrode and the intermediate electrode are spaced apart in the region where they overlap in the vertical direction of the device, the bottom electrode and the intermediate electrode are spaced apart in the region where they overlap in the vertical direction of the device, and the intermediate electrode and the bottom electrode are spaced apart in the region where they overlap in the vertical direction of the device. The influence of parasitic capacitance in the device can be effectively reduced, and the performance of the device can be improved.
Fig. 8 is a cross-sectional schematic view of a single crystal piezo-electrically coupled resonator filter according to an exemplary embodiment of the present invention. Fig. 8 is similar to the structure shown in fig. 4, except that in fig. 8, the middle electrode includes two metal layers (i.e., 04 and 17) and a decoupling layer 16, forming a typical coupled resonator filter, i.e., formed by two resonators placed one above the other in the vertical direction and acoustically decoupled. Wherein 01 is a cavity structure which is a through hole penetrating through the substrate; 02 is the bottom electrode of the first resonator, 03 is the single crystal piezoelectric layer of the first resonator; 04 is the top electrode of the first resonator; 16 is a decoupling layer which can be a single passivation layer or a plurality of passivation layers made of materials with different acoustic impedances; 17 is the bottom electrode of the second resonator; 05 is the single crystal piezoelectric layer of the second resonator and 06 is the top electrode of the second resonator; 21 is an electrode pin of the top electrode of the second resonator; 22 are voids or structures formed of a dielectric material that is non-conductive. In the embodiment, the electrode pin 21 of the top electrode is isolated from the bottom electrode of the second resonator, the top electrode of the first resonator and the electrode of the first resonator by the structure 22, so that the influence of parasitic capacitance in an overlapping region in the vertical direction of the device is reduced, and the performance of the device is improved.
Fig. 9 is a schematic sectional view of a single crystal piezoelectric coupled resonator filter obtained along the direction a-a in fig. 8. In fig. 9, 23 is an electrode pin of the bottom electrode of the second resonator; 25 is an electrode pin of the top electrode of the first resonator; 24 and 26 are voids or structures formed of a dielectric material that is not electrically conductive. Since the electrode pin 23 of the bottom electrode of the second resonator is isolated from the top electrode 04 of the first resonator and the bottom electrode 02 of the first resonator by the structure 24 and the electrode pin 25 of the top electrode of the first resonator is isolated from the bottom electrode 02 of the first resonator by the structure 26, the influence of the parasitic capacitance generated in the overlapping region in the vertical direction on the device performance is avoided.
Fig. 10 is a cross-sectional view schematically illustrating a single crystal piezoelectric coupled resonator filter according to another exemplary embodiment of the present invention. The structure shown in fig. 10 is similar to that shown in fig. 8, except that in fig. 10, the electrode pin 29 is connected to the electrode connection of the bottom electrode 17 of the second resonator, the decoupling layer 16, and the electrode connection of the top electrode 04 of the first resonator, and is separated from the bottom electrode 02 of the first resonator by a gap or a structure 30 formed of a non-conductive dielectric material; and the electrode pin 27 of the top electrode 06 of the second resonator is separated from the bottom electrode 17 of the second resonator, the decoupling layer 16, the top electrode 04 of the first resonator and the bottom electrode 02 of the first resonator by a structure 28 formed by a gap or a non-conductive dielectric material. This structure is also advantageous in avoiding the influence of parasitic capacitance in the overlapping region in the vertical direction.
In the example shown in fig. 4-10, the electrode pin is a crossover electrode pin, an upper end of the crossover electrode pin is electrically connected to the corresponding electrode, and at least one piezoelectric layer is bridged between the upper end and the lower end of the crossover electrode pin.
As shown in fig. 4-10, the lower end of the cross-over electrode pin is disposed in the same layer as the corresponding electrode or the corresponding piezoelectric layer.
As shown in fig. 10, the upper end of the jumper electrode pin is connected and electrically connected with the corresponding electrode in the same layer.
As shown in fig. 4 to 7, the upper end of the jumper electrode pin covers the top surface of the counter electrode to be electrically connected to the counter electrode.
Based on the above, the invention provides the following technical scheme:
1. a single crystal piezoelectric structure comprising:
a plurality of piezoelectric layers, each piezoelectric layer being a single crystal piezoelectric layer;
the piezoelectric layer structure comprises a plurality of electrodes, a plurality of piezoelectric layers and a plurality of piezoelectric layers, wherein the electrodes are arranged on the upper side and the lower side of each piezoelectric layer, and the piezoelectric layers and the electrodes form a laminated structure laminated in the thickness direction of the single crystal piezoelectric structure;
a substrate on which the laminated structure is disposed;
an acoustic mirror, located below the laminated structure,
wherein:
the overlapping areas of the piezoelectric layers, the electrodes and the acoustic mirror in the thickness direction of the piezoelectric layers form the effective area of the single-crystal piezoelectric structure;
each electrode has an electrode connection portion arranged in the same layer as the electrode;
the layer structure on the upper side of the electrode connection portion of at least one of the other electrodes except the top electrode on the top layer among the plurality of electrodes is removed to expose the electrode connection portion.
2. The single crystal piezoelectric structure of claim 1, wherein:
the layer structure on the upper side of the electrode connection portion of each of the other electrodes is removed to expose the electrode connection portion.
3. The single crystal piezoelectric structure of claim 2, wherein:
the electrode connecting portions of all electrodes under the top electrode are located on the same side of the active area or have portions on the same side of the active area;
the ends of the electrode connecting portions are sequentially staggered on the same side so that the top surfaces of the electrode connecting portions constitute a step surface.
4. The single crystal piezoelectric structure of claim 2, wherein:
the electrode connection portion of at least one electrode under the top electrode includes a portion located at one side of the active area, and the electrode connection portions of the other electrodes under the top electrode are located at the other side of the active area or have portions at the other side of the active area.
5. The single crystal piezoelectric structure of claim 4, wherein:
under the condition that the number of the electrode connecting parts on the same side of the effective area is not less than two, the end parts of the electrode connecting parts on the same side of the effective area are staggered in sequence, and the top surfaces of the electrode connecting parts on the same side form a step surface.
6. The single crystal piezoelectric structure of claim 4, wherein:
the electrode connection portion of the bottom electrode positioned at the lowermost layer among the plurality of electrodes is positioned at one side of the active area or has a portion at one side of the active area, and the electrode connection portions of the other electrodes except the top and bottom electrodes among the plurality of electrodes are positioned at the other side of the active area or has a portion at the other side of the active area.
7. The single crystal piezoelectric structure of any one of claims 2-6, further comprising:
and the upper end of the cross-over electrode pin is electrically connected with the corresponding electrode, and at least one piezoelectric layer is cross-connected between the upper end and the lower end of the cross-over electrode pin.
8. The single crystal piezoelectric structure of claim 7, wherein:
the lower end of the cross-over electrode pin is arranged in the same layer with the corresponding electrode or the corresponding piezoelectric layer.
9. The single crystal piezoelectric structure of claim 7, wherein:
the upper end of the cross-over electrode pin is connected with the corresponding electrode in the same layer and is electrically connected with the corresponding electrode; or
The upper end of the bridging electrode pin covers the top surface of the corresponding electrode and is electrically connected with the corresponding electrode.
10. The single crystal piezoelectric structure of any one of claims 7-9, wherein:
there is a gap in the transverse direction between the crossover electrode pin and an edge of the stacked structure, the gap extending from an upper end to a lower end of the crossover electrode pin.
11. The single crystal piezoelectric structure of claim 10, wherein:
a portion between upper and lower ends of the crossover electrode pin includes a plurality of stepped portions, and the gap exists between the stepped portions and an edge of the laminated structure in a transverse direction; or the part between the upper end and the lower end of the bridging electrode pin comprises a vertical connecting part, and the gap exists between the vertical connecting part and the edge of the laminated structure in the transverse direction;
the gap is a gap or a non-conductive medium gap.
12. The single crystal piezoelectric structure of any one of claims 9-11, wherein:
the electrode electrically connected with the upper end of the bridging electrode pin is an upper electrode;
an electrode that is below the upper electrode and that is immediately adjacent to the upper electrode in the thickness direction is a lower electrode;
on one side of the effective area, the end part of the lower electrode is located on the inner side of the end part of the upper electrode in the transverse direction, so that an isolation layer is formed on the lower side of the piezoelectric layer between the upper electrode and the lower electrode, the isolation layer and the lower electrode are in the same layer, and the isolation layer is a gap layer or a non-conductive medium layer.
13. The single crystal piezoelectric structure of claim 12, wherein:
the end of the lower electrode and the crossover electrode pin define a boundary of the isolation layer in a lateral direction.
14. The single crystal piezoelectric structure of any one of claims 7-13, wherein:
the plurality of piezoelectric layers comprise a first piezoelectric layer and a second piezoelectric layer, the plurality of electrodes comprise a bottom electrode, a middle electrode and a top electrode, and the bottom electrode, the first piezoelectric layer, the middle electrode, the second piezoelectric layer and the top electrode are sequentially stacked.
15. The single crystal piezoelectric structure of claim 14, wherein:
the at least one crossover electrode pin comprises at least one of a middle electrode pin and a top electrode pin;
the upper end of the middle electrode pin is electrically connected to the electrode connecting part of the middle electrode, and the lower end of the middle electrode pin is separated from the bottom electrode and arranged on the same layer as the bottom electrode;
the upper end of the top electrode pin is connected to an electrode connecting part of the top electrode; and the lower end of the top electrode pin is separated from the bottom electrode and arranged on the same layer as the bottom electrode, or the lower end of the top electrode pin is separated from the middle electrode and arranged on the same layer as the middle electrode, or the lower end of the top electrode is connected with the top surface of the bottom electrode and electrically connected with each other.
16. The single crystal piezoelectric structure of claim 15, wherein:
the middle electrode pin and the top electrode pin are respectively arranged at two sides of the effective area.
17. The single crystal piezoelectric structure of any one of claims 7-13, wherein:
the plurality of piezoelectric layers includes a first piezoelectric layer and a second piezoelectric layer;
the plurality of electrodes comprises a bottom electrode, a first intermediate electrode, a second intermediate electrode, and a top electrode;
the single crystal piezoelectric structure further comprises a coupling layer, and the coupling layer is arranged between the first intermediate electrode and the second intermediate electrode; and is
The bottom electrode, the first piezoelectric layer, the first middle electrode, the coupling layer, the second middle electrode, the second piezoelectric layer and the top electrode are sequentially stacked.
18. The single crystal piezoelectric structure of claim 17, wherein:
the at least one crossover electrode pin comprises at least one of a first intermediate electrode pin, a second intermediate electrode pin, and a top electrode pin;
the upper end of the first middle electrode pin is electrically connected to the electrode connecting part of the first middle electrode, and the lower end of the first middle electrode pin is separated from the bottom electrode and arranged on the same layer as the bottom electrode;
the upper end of the second middle electrode pin is electrically connected to the electrode connecting part of the second middle electrode, and the lower end of the second middle electrode pin is separated from the bottom electrode and arranged on the same layer as the bottom electrode;
the upper end of the top electrode pin is connected to an electrode connecting part of the top electrode; and the lower end of the top electrode pin is separated from the bottom electrode and arranged on the same layer as the bottom electrode, or the lower end of the top electrode pin is separated from the first intermediate electrode and arranged on the same layer as the first intermediate electrode, or the lower end of the top electrode pin is connected with the top surface of the bottom electrode and electrically connected with each other.
19. The single crystal piezoelectric structure of claim 18, wherein:
the first middle electrode pin and the second middle electrode pin are respectively arranged at two sides of the effective area.
20. The single crystal piezoelectric structure of claim 18, wherein:
the first intermediate electrode pin and the second intermediate electrode pin are common electrode pins which are simultaneously and electrically connected with the first intermediate electrode and the second intermediate electrode.
21. The single crystal piezoelectric structure of any one of claims 2-20, wherein:
each piezoelectric layer and the electrodes on the upper side and the lower side of the piezoelectric layer form a film structure together, and each film structure is provided with an upper electrode layer, a lower electrode layer and the piezoelectric layer positioned between the upper electrode layer and the lower electrode layer;
in the thickness direction of the single crystal piezoelectric structure, the area of at least one layer in the thin film structure positioned on the upper layer is not larger than the area of the corresponding layer in the thin film structure positioned on the lower layer; and/or the area of the membrane structure positioned on the upper layer as a whole is not larger than the area of the membrane structure positioned on the lower layer as a whole, and/or the area of the upper electrode layer in each membrane structure is not larger than the area of the piezoelectric layer but not larger than the area of the lower electrode layer.
22. The single crystal piezoelectric structure of claim 21, wherein:
in the thickness direction of the single crystal piezoelectric structure, the area of the piezoelectric layer located in the upper layer thin film structure is smaller than the area of the piezoelectric layer located in the lower layer thin film structure.
23. The single crystal piezoelectric structure of claim 1, wherein:
the crystal directions of the first piezoelectric layer and the second piezoelectric layer are the same direction or opposite directions.
24. The single crystal piezoelectric structure of any one of claims 1-23, wherein:
the material of the piezoelectric layer comprises single crystal lithium niobate (LiNbO)3) And single crystal lithium tantalate (LiTaO)3) At least one of single crystal aluminum nitride (AlN), Quartz (Quartz), single crystal lead zirconate titanate (PZT), lead magnesium niobate-lead titanate (PMN-PT).
25. An electronic device comprising a single crystal piezoelectric structure according to any one of claims 1-24.
26. The electronic device of claim 25, wherein:
the electronic device comprises at least one of a MEMS piezoelectric microphone, a MEMS ultrasonic transducer, a MEMS loudspeaker, a MEMS hydrophone and a single crystal coupled resonant filter.
Although embodiments of the present invention have been shown and described, it would be appreciated by those skilled in the art that changes may be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the claims and their equivalents.

Claims (26)

1. A single crystal piezoelectric structure comprising:
a plurality of piezoelectric layers, each piezoelectric layer being a single crystal piezoelectric layer;
the piezoelectric layer structure comprises a plurality of electrodes, a plurality of piezoelectric layers and a plurality of piezoelectric layers, wherein the electrodes are arranged on the upper side and the lower side of each piezoelectric layer, and the piezoelectric layers and the electrodes form a laminated structure laminated in the thickness direction of the single crystal piezoelectric structure;
a substrate on which the laminated structure is disposed;
an acoustic mirror, located below the laminated structure,
wherein:
the overlapping areas of the piezoelectric layers, the electrodes and the acoustic mirror in the thickness direction of the piezoelectric layers form the effective area of the single-crystal piezoelectric structure;
each electrode has an electrode connection portion arranged in the same layer as the electrode;
the layer structure on the upper side of the electrode connection portion of at least one of the other electrodes except the top electrode on the top layer among the plurality of electrodes is removed to expose the electrode connection portion.
2. The single crystal piezoelectric structure of claim 1, wherein:
the layer structure on the upper side of the electrode connection portion of each of the other electrodes is removed to expose the electrode connection portion.
3. The single crystal piezoelectric structure of claim 2, wherein:
the electrode connecting portions of all electrodes under the top electrode are located on the same side of the active area or have portions on the same side of the active area;
the ends of the electrode connecting portions are sequentially staggered on the same side so that the top surfaces of the electrode connecting portions constitute a step surface.
4. The single crystal piezoelectric structure of claim 2, wherein:
the electrode connection portion of at least one electrode under the top electrode includes a portion located at one side of the active area, and the electrode connection portions of the other electrodes under the top electrode are located at the other side of the active area or have portions at the other side of the active area.
5. The single crystal piezoelectric structure of claim 4, wherein:
under the condition that the number of the electrode connecting parts on the same side of the effective area is not less than two, the end parts of the electrode connecting parts on the same side of the effective area are staggered in sequence, and the top surfaces of the electrode connecting parts on the same side form a step surface.
6. The single crystal piezoelectric structure of claim 4, wherein:
the electrode connection portion of the bottom electrode positioned at the lowermost layer among the plurality of electrodes is positioned at one side of the active area or has a portion at one side of the active area, and the electrode connection portions of the other electrodes except the top and bottom electrodes among the plurality of electrodes are positioned at the other side of the active area or has a portion at the other side of the active area.
7. The single crystal piezoelectric structure of any one of claims 2-6, further comprising:
and the upper end of the cross-over electrode pin is electrically connected with the corresponding electrode, and at least one piezoelectric layer is cross-connected between the upper end and the lower end of the cross-over electrode pin.
8. The single crystal piezoelectric structure of claim 7, wherein:
the lower end of the cross-over electrode pin is arranged in the same layer with the corresponding electrode or the corresponding piezoelectric layer.
9. The single crystal piezoelectric structure of claim 7, wherein:
the upper end of the cross-over electrode pin is connected with the corresponding electrode in the same layer and is electrically connected with the corresponding electrode; or
The upper end of the bridging electrode pin covers the top surface of the corresponding electrode and is electrically connected with the corresponding electrode.
10. The single crystal piezoelectric structure of any one of claims 7-9, wherein:
there is a gap in the transverse direction between the crossover electrode pin and an edge of the stacked structure, the gap extending from an upper end to a lower end of the crossover electrode pin.
11. The single crystal piezoelectric structure of claim 10, wherein:
a portion between upper and lower ends of the crossover electrode pin includes a plurality of stepped portions, and the gap exists between the stepped portions and an edge of the laminated structure in a transverse direction; or the part between the upper end and the lower end of the bridging electrode pin comprises a vertical connecting part, and the gap exists between the vertical connecting part and the edge of the laminated structure in the transverse direction;
the gap is a gap or a non-conductive medium gap.
12. The single crystal piezoelectric structure of any one of claims 9-11, wherein:
the electrode electrically connected with the upper end of the bridging electrode pin is an upper electrode;
an electrode that is below the upper electrode and that is immediately adjacent to the upper electrode in the thickness direction is a lower electrode;
on one side of the effective area, the end part of the lower electrode is located on the inner side of the end part of the upper electrode in the transverse direction, so that an isolation layer is formed on the lower side of the piezoelectric layer between the upper electrode and the lower electrode, the isolation layer and the lower electrode are in the same layer, and the isolation layer is a gap layer or a non-conductive medium layer.
13. The single crystal piezoelectric structure of claim 12, wherein:
the end of the lower electrode and the crossover electrode pin define a boundary of the isolation layer in a lateral direction.
14. The single crystal piezoelectric structure of any one of claims 7-13, wherein:
the plurality of piezoelectric layers comprise a first piezoelectric layer and a second piezoelectric layer, the plurality of electrodes comprise a bottom electrode, a middle electrode and a top electrode, and the bottom electrode, the first piezoelectric layer, the middle electrode, the second piezoelectric layer and the top electrode are sequentially stacked.
15. The single crystal piezoelectric structure of claim 14, wherein:
the at least one crossover electrode pin comprises at least one of a middle electrode pin and a top electrode pin;
the upper end of the middle electrode pin is electrically connected to the electrode connecting part of the middle electrode, and the lower end of the middle electrode pin is separated from the bottom electrode and arranged on the same layer as the bottom electrode;
the upper end of the top electrode pin is connected to an electrode connecting part of the top electrode; and the lower end of the top electrode pin is separated from the bottom electrode and arranged on the same layer as the bottom electrode, or the lower end of the top electrode pin is separated from the middle electrode and arranged on the same layer as the middle electrode, or the lower end of the top electrode is connected with the top surface of the bottom electrode and electrically connected with each other.
16. The single crystal piezoelectric structure of claim 15, wherein:
the middle electrode pin and the top electrode pin are respectively arranged at two sides of the effective area.
17. The single crystal piezoelectric structure of any one of claims 7-13, wherein:
the plurality of piezoelectric layers includes a first piezoelectric layer and a second piezoelectric layer;
the plurality of electrodes comprises a bottom electrode, a first intermediate electrode, a second intermediate electrode, and a top electrode;
the single crystal piezoelectric structure further comprises a coupling layer, and the coupling layer is arranged between the first intermediate electrode and the second intermediate electrode; and is
The bottom electrode, the first piezoelectric layer, the first middle electrode, the coupling layer, the second middle electrode, the second piezoelectric layer and the top electrode are sequentially stacked.
18. The single crystal piezoelectric structure of claim 17, wherein:
the at least one crossover electrode pin comprises at least one of a first intermediate electrode pin, a second intermediate electrode pin, and a top electrode pin;
the upper end of the first middle electrode pin is electrically connected to the electrode connecting part of the first middle electrode, and the lower end of the first middle electrode pin is separated from the bottom electrode and arranged on the same layer as the bottom electrode;
the upper end of the second middle electrode pin is electrically connected to the electrode connecting part of the second middle electrode, and the lower end of the second middle electrode pin is separated from the bottom electrode and arranged on the same layer as the bottom electrode;
the upper end of the top electrode pin is connected to an electrode connecting part of the top electrode; and the lower end of the top electrode pin is separated from the bottom electrode and arranged on the same layer as the bottom electrode, or the lower end of the top electrode pin is separated from the first intermediate electrode and arranged on the same layer as the first intermediate electrode, or the lower end of the top electrode pin is connected with the top surface of the bottom electrode and electrically connected with each other.
19. The single crystal piezoelectric structure of claim 18, wherein:
the first middle electrode pin and the second middle electrode pin are respectively arranged at two sides of the effective area.
20. The single crystal piezoelectric structure of claim 18, wherein:
the first intermediate electrode pin and the second intermediate electrode pin are common electrode pins which are simultaneously and electrically connected with the first intermediate electrode and the second intermediate electrode.
21. The single crystal piezoelectric structure of any one of claims 2-20, wherein:
each piezoelectric layer and the electrodes on the upper side and the lower side of the piezoelectric layer form a film structure together, and each film structure is provided with an upper electrode layer, a lower electrode layer and the piezoelectric layer positioned between the upper electrode layer and the lower electrode layer;
in the thickness direction of the single crystal piezoelectric structure, the area of at least one layer in the thin film structure positioned on the upper layer is not larger than the area of the corresponding layer in the thin film structure positioned on the lower layer; and/or the area of the membrane structure positioned on the upper layer as a whole is not larger than the area of the membrane structure positioned on the lower layer as a whole, and/or the area of the upper electrode layer in each membrane structure is not larger than the area of the piezoelectric layer but not larger than the area of the lower electrode layer.
22. The single crystal piezoelectric structure of claim 21, wherein:
in the thickness direction of the single crystal piezoelectric structure, the area of the piezoelectric layer located in the upper layer thin film structure is smaller than the area of the piezoelectric layer located in the lower layer thin film structure.
23. The single crystal piezoelectric structure of claim 1, wherein:
the crystal directions of the first piezoelectric layer and the second piezoelectric layer are the same direction or opposite directions.
24. The single crystal piezoelectric structure of any one of claims 1-23, wherein:
the material of the piezoelectric layer comprises single crystal lithium niobate (LiNbO)3) And single crystal lithium tantalate (LiTaO)3) At least one of single crystal aluminum nitride (AlN), Quartz (Quartz), single crystal lead zirconate titanate (PZT), lead magnesium niobate-lead titanate (PMN-PT).
25. An electronic device comprising the single crystal piezoelectric structure of any one of claims 1-24.
26. The electronic device of claim 25, wherein:
the electronic device comprises at least one of a MEMS piezoelectric microphone, a MEMS ultrasonic transducer, a MEMS loudspeaker, a MEMS hydrophone and a single crystal coupled resonant filter.
CN201911424774.6A 2019-12-31 2019-12-31 Single crystal piezoelectric structure and electronic device having the same Pending CN111146328A (en)

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