WO2024027733A1 - Quartz resonator having piezoelectric layer with inverted-mesa structure, manufacturing method therefor and electronic device - Google Patents

Quartz resonator having piezoelectric layer with inverted-mesa structure, manufacturing method therefor and electronic device Download PDF

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Publication number
WO2024027733A1
WO2024027733A1 PCT/CN2023/110647 CN2023110647W WO2024027733A1 WO 2024027733 A1 WO2024027733 A1 WO 2024027733A1 CN 2023110647 W CN2023110647 W CN 2023110647W WO 2024027733 A1 WO2024027733 A1 WO 2024027733A1
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Prior art keywords
quartz
electrode
shot
piezoelectric layer
mask
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PCT/CN2023/110647
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French (fr)
Chinese (zh)
Inventor
庞慰
张孟伦
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天津大学
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Publication of WO2024027733A1 publication Critical patent/WO2024027733A1/en

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/027—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the microelectro-mechanical [MEMS] type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414—Resonance frequency
    • H03H2003/0421—Modification of the thickness of an element
    • H03H2003/0428—Modification of the thickness of an element of an electrode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414—Resonance frequency
    • H03H2003/0421—Modification of the thickness of an element
    • H03H2003/0435—Modification of the thickness of an element of a piezoelectric layer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H2009/155—Constructional features of resonators consisting of piezoelectric or electrostrictive material using MEMS techniques

Definitions

  • Embodiments of the present invention relate to the field of semiconductors, and in particular to a quartz resonator whose piezoelectric layer is an inverse mesa structure, a manufacturing method thereof, and an electronic device.
  • Existing wafer (quartz crystal oscillator) manufacturing mainly uses mechanical grinding to thin the quartz, and controls the film thickness in the resonance area of the wafer to control the frequency.
  • the thinned quartz sheet is then split using wire cutting to obtain a bare wafer that meets the size requirements.
  • Wet etching and plasma treatment are then used to repeatedly perform frequency modulation on the bare wafer shot to obtain a wafer that meets the frequency requirements (this method is hereinafter referred to as the shot method).
  • the shot method approach has been used for many years to produce lower fundamental frequency, larger size wafers.
  • the mechanical grinding and thinning method is difficult to obtain in industry for high-frequency applications. Quartz flakes for quartz resonators with fundamental frequency (40MHz and above). Specifically, a high fundamental frequency corresponds to a thinner wafer thickness. As the wafer is thinned to less than 40 ⁇ m, fragments are prone to occur and the yield rate drops significantly. The higher the fundamental frequency of the quartz wafer, the lower the yield rate, and even failure to achieve success. (2) It is difficult to obtain wafer particles with a size of less than 1 mm ⁇ 1 mm by wire cutting. The cutting effect is even worse for the quartz flakes whose thickness is reduced to less than 40 ⁇ m, and the yield rate drops significantly. The above two factors make traditional solutions unable to meet the requirements for high fundamental frequency and miniaturized chip manufacturing.
  • the boundary conditions of the resonator can be optimized and the lateral leakage of sound waves can be reduced, thereby further improving the performance of the resonator.
  • the electrode lead-out portion of the top electrode and the electrode lead-out portion of the bottom electrode of the conventional quartz resonator are located on both sides of the piezoelectric layer. This causes a technical problem in that the resonator electrode and the packaging substrate or the lead-out electrode of the packaging substrate are not in the same plane during packaging, which increases the complexity of electrical connection.
  • the present invention proposes a quartz wafer manufacturing process based on micro/nano electromechanical systems (M/NEMS) photolithography technology, which overcomes the challenges faced by the traditional shot method and can meet the needs of high fundamental frequency and miniaturization wafer manufacturing. It has It has the characteristics of simple process, good process compatibility and high yield rate.
  • M/NEMS micro/nano electromechanical systems
  • a quartz resonator including:
  • Quartz piezoelectric layer arranged between the bottom electrode and the top electrode
  • One of the top electrode and the bottom electrode is on one side of the piezoelectric layer, the other of the top electrode and the bottom electrode is on the other side of the piezoelectric layer, and the electrode lead-out part of the one electrode covers the piezoelectric layer.
  • the end surface extends to the other side of the piezoelectric layer so that it is on the same side of the piezoelectric layer as the other electrode;
  • the piezoelectric layer has an inverted platform structure.
  • a manufacturing method of a quartz resonator including the steps:
  • Forming quartz particles forming quartz particles from a quartz wafer based on at least micro/nano electromechanical system lithography technology, the quartz particles having an inverted mesa structure;
  • Form an electrode layer form a bottom electrode and a top electrode on both sides of the particle, one of the top electrode and the bottom electrode is on one side of the particle, and the other electrode of the top electrode and the bottom electrode is on the other side of the particle , the electrode lead-out portion of the one electrode covers the end surface of the shot and extends to the other side of the shot so as to be on the same side of the shot as the other electrode.
  • Embodiments of the present invention also relate to an electronic device, including the above-mentioned quartz resonator.
  • 1-6 are schematic cross-sectional views of the manufacturing process of a quartz resonator according to an exemplary embodiment of the present invention
  • Figures 7-12 are schematic cross-sectional views of a manufacturing process of a quartz resonator according to another exemplary embodiment of the present invention.
  • Figures 13-18 are schematic cross-sectional views of the manufacturing process of a quartz resonator according to yet another exemplary embodiment of the present invention.
  • Figure 19 is a schematic flow chart of fundamental frequency adjustment of granules.
  • the invention relates to micro/nano electromechanical systems (M/NEMS) and quartz crystal oscillator manufacturing processes. It relates to a new quartz resonator manufacturing process that combines part of the MEMS process with the traditional particle manufacturing process, and is used to manufacture high-precision, miniaturized oscillators. Quartz resonator. This method not only integrates the characteristics of high dimensional accuracy and easy miniaturization of the MEMS manufacturing process, but also utilizes the process of shot testing and frequency modulation. Especially for high fundamental frequency (above 40MHz) wafer manufacturing, it has a simple process, high efficiency, and high yield rate. Higher advantages.
  • Top electrode the material can be molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or composites of the above metals or their alloys, etc.
  • the material can be molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or composites of the above metals or their alloys, etc.
  • the bottom electrode electrode lead-out part can be made of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or composites of the above metals or their alloys.
  • the top electrode and its electrode lead-out portion, the bottom electrode and its electrode lead-out portion may be made of the same metal material.
  • each part is described using a feasible material as an example, but is not limited thereto.
  • 1-6 are schematic cross-sectional views of a manufacturing process of a quartz resonator according to an exemplary embodiment of the present invention.
  • the following is an example of the manufacturing process of a quartz resonator with reference to Figures 1-6, which includes the following steps:
  • Step 1 Make the mask.
  • micro/nano electromechanical system photolithography is used to create mask patterns on both sides of the quartz wafer 10 based on micro/nano electromechanical system photolithography technology, and the portion of the quartz wafer corresponding to the resonance region 12 is exposed. , and the remaining parts cover the mask layer 20 .
  • wet etching for example, step 2 of the embodiment shown in FIGS.
  • the mask may be a metal mask, such as chromium gold (a layer of gold on the top and a layer of chromium on the bottom), or other Inert metal; for subsequent use of dry etching (for example, step 2 of the embodiment shown in Figures 1 to 6), the mask can be SU-8 glue or other photoresists.
  • the material of the mask 20 can also be applied to other embodiments, which will not be described again below.
  • FIGS. 1 to 4 only the area corresponding to a single shot on the quartz wafer is shown. As can be understood, there are multiple particles on the quartz wafer 10 as shown in FIGS. 1 to 4 area, the shot particles 16 shown in Figure 5 are respectively formed from multiple areas shown in Figures 1-4. In other embodiments, similar understanding should be made, which will not be described again.
  • Step 2 Wet etching. Wet etching is used to thin the resonant region 12 to a designed thickness.
  • the structure of the etched quartz wafer 10 is shown in FIG. 2 .
  • step 2 can also be replaced by dry etching, or wet etching can be combined with dry etching.
  • Step 3 Remove mask 20. As shown in FIG. 3 , the etching solution is used to remove the mask 20 layer by layer. Optionally, the quartz wafer after the mask 20 is removed is cleaned.
  • Step 4 Mechanical scribing.
  • the quartz wafer after step 3 can be attached to the soft film (not shown), the quartz wafer 10 is cut into particles by mechanical dicing.
  • the dicing through grooves 14 are shown.
  • the gel is then degummed, thereby obtaining dispersed quartz particles 16 as shown in FIG. 5 later.
  • the specific steps of mechanical dicing are not limited here, as long as the steps that can cut the quartz wafer 10 into shot particles are included in the dicing steps of the present invention.
  • a flat surface can be formed on the end face of the granules.
  • Step 5 Test and FM.
  • the frequency of the shot (as shown in Figure 5) is tested one by one, and then the shot is wet-etched according to the difference from the design frequency, and the thickness of the resonance area of the shot 16 is changed to adjust the frequency. Repeat the test-etch steps several times to adjust the wafer frequency.
  • Step 6 Form the electrodes.
  • top electrode 30 and bottom electrode 40 are plated on shot 16 to form a quartz resonator.
  • the shot particles 16 are arranged between the bottom electrode 40 and the top electrode 30 , wherein: the bottom electrode is on the lower side of the shot particles 16 , the top electrode is on the upper side of the shot particles 16 , and the electrode lead-out portion of the bottom electrode 40 42 covers the end surface of the shot 16 and extends to the upper side of the shot 16 so as to be on the same upper side of the shot 16 as the top electrode 30 .
  • the bottom electrode 40 and the top electrode 30 and the electrode lead-out part are formed by sputtering or evaporation.
  • a mechanical masking method can be used on the shot 16 shown in FIG. 5 .
  • An additional mask (not shown) having a pattern to expose areas corresponding to the bottom electrode 40 and the top electrode 30 and the electrode lead-out portion on the shot 16 is then formed by sputtering or evaporation. The electrode 40 and the top electrode 30 and the electrode lead-out are then removed.
  • the particles have a double-sided reverse mesas structure
  • masks are set on both sides of the quartz wafer, and the masks on both sides are patterned using micro/nano electromechanical system photolithography technology
  • the shot has a single-sided reverse mesa structure
  • masks are set on both sides of the quartz wafer, and only one side of the mask is patterned using micro/nano electromechanical system lithography technology.
  • the steps for forming quartz granules include:
  • a mask 20 is provided on both sides or one side of the quartz wafer 10, and the mask is patterned using micro/nano electromechanical system lithography technology to expose the resonant region 12 of the quartz wafer;
  • the quartz wafer with the mask removed is cut by mechanical dicing to obtain shot 16.
  • FIGS. 7 to 12 are schematic cross-sectional views of a manufacturing process of a quartz resonator according to another exemplary embodiment of the present invention.
  • the difference between this embodiment and the embodiment shown in FIGS. 1 to 6 is that in this embodiment, The mechanical scribing step is performed after the mask making step and before wet etching. The advantage of this is to improve the scribing efficiency.
  • the mechanical strength of the quartz wafer during slicing helps to improve the dicing yield and the dicing yield of small-size wafers.
  • the following is an example of the manufacturing process of a quartz resonator with reference to Figures 7-12. The specific steps are as follows:
  • Step 1 Make the mask. As shown in Figure 7, micro/nano electromechanical system photolithography is used to create mask patterns on both sides of the quartz wafer 10. The portion of the quartz wafer corresponding to the resonance area 12 is exposed, and the remaining portions are covered with the mask layer 20. .
  • Step 2 Mechanical scribing.
  • the quartz wafer after step 1 can be attached to a soft film (not shown), and the quartz wafer 10 can be cut into particles by mechanical scribing.
  • the scribing is shown in Figure 8 Chip through grooves 14, in Figure 8, between the through grooves 14 are preliminary shot with mask 20.
  • the gel is then degummed, thereby obtaining dispersed preliminary shot particles with a mask 20 as shown in FIG. 9 later.
  • the specific steps of mechanical dicing are not limited here, as long as the steps that can cut the quartz wafer 10 into shot particles are included in the dicing steps of the present invention.
  • a flat surface can be formed on the end face of the granules.
  • Step 3 Wet etching. Wet etching is used to thin the resonant region 12 to a designed thickness. The structure of the etched quartz wafer 10 is shown in FIG. 10 . Although not shown, step 3 can also be replaced by dry etching, or wet etching can be combined with dry etching.
  • Step 4 Remove mask 20. As shown in FIG. 11 , the mask 20 is removed layer by layer using an etching solution. Optionally, the particles after the mask 20 is removed are cleaned.
  • Step 5 Test and FM.
  • the frequency of the shot (as shown in Figure 11) is tested one by one, and then the shot is wet-etched according to the difference from the design frequency, and the thickness of the resonance area of the shot 16 is changed to adjust the frequency. Repeat the test-etch steps several times to adjust the wafer frequency.
  • Step 6 Form the electrodes.
  • a top electrode 30 and a bottom electrode 40 are plated on the shot 16 to form a quartz resonator.
  • the shot particles 16 are arranged between the bottom electrode 40 and the top electrode 30, wherein: the bottom electrode is located on the lower side of the shot particles 16, the top electrode is located on the upper side of the shot particles 16, and the electrode lead-out portion of the bottom electrode 40 42 covers the end surface of the shot 16 and extends to the upper side of the shot 16 so as to be on the same upper side of the shot 16 as the top electrode 30 .
  • the bottom electrode 40 and the top electrode 30 and the electrode lead-out part are formed by sputtering or evaporation.
  • a mechanical masking method can be used on the shot 16 shown in FIG. 11 first.
  • a mask (not shown) having a pattern to expose areas corresponding to the bottom electrode 40 and the top electrode 30 and the electrode lead-out portion on the shot 16 is provided, and then the bottom electrode 40 is formed by sputtering or evaporation. and the top electrode 30 and the electrode lead-out portion, and then the mask is removed.
  • the particles have a double-sided reverse mesas structure
  • masks are set on both sides of the quartz wafer, and the masks on both sides are patterned using micro/nano electromechanical system photolithography technology
  • Particles are For the single-sided reverse mesa structure, masks are set on both sides of the quartz wafer, and only one side of the mask is patterned using micro/nano electromechanical system lithography technology.
  • the steps for forming quartz granules include:
  • a mask 20 is provided on both sides or one side of the quartz wafer 10, and the mask is patterned using micro/nano electromechanical system lithography technology to expose the resonant region 12 of the quartz wafer;
  • the mask on the thinned preliminary shot is removed to obtain quartz shot 16.
  • FIG. 13 to 19 are schematic cross-sectional views of a manufacturing process of a quartz resonator according to yet another exemplary embodiment of the present invention.
  • the following is an example of the manufacturing process of the quartz resonator with reference to Figures 13-19.
  • the specific steps are as follows:
  • Step 1 Make the mask. As shown in Figure 13, micro/nano electromechanical system photolithography is used to create mask patterns on both sides of the quartz wafer 10. The portion of the quartz wafer corresponding to the resonance region 12 is covered by the mask layer 20. The mask layer A mask groove 22 is provided in 20 .
  • Step 2 Preliminary wet etching.
  • preliminary etching can be performed on the quartz wafer 10 after step 1.
  • a split pre-etching groove 18 appears on the quartz wafer 10 at a position corresponding to the mask groove 22 .
  • the resonance area on the quartz wafer 10 is still covered by the mask 20 .
  • step 2 can also be replaced by dry etching, or wet etching can be combined with dry etching.
  • Step 3 The mask is further patterned.
  • micro/nano electromechanical system photolithography can be used to further pattern the mask on the quartz wafer 10 after step 2 to expose the area where the resonance region 12 is located, as shown in FIG. 15 .
  • Step 4 Wet split.
  • a plurality of shot particles are formed by wet etching.
  • split grooves 14 are shown.
  • between the through grooves 14 are preliminary shots with a mask 20 . , as shown in Figure 16.
  • an etching solution is used to etch the mask groove 22 to form the lobed through grooves 14. While the lobed through grooves 14 are formed, the resonant region 12 is simultaneously thinned.
  • the end surface of the formed particles includes a slope that is not at a 90-degree angle to the top or bottom side of the particles, as shown in Figure 16.
  • Step 5 Remove mask 20.
  • the mask 20 is removed layer by layer using an etching solution to obtain the shot particles 16 as shown in FIG. 17 .
  • the shot particles after the mask 20 is removed are cleaned.
  • Step 6 Test and FM.
  • the frequency of the shot (as shown in Figure 17) is tested one by one, and then the shot is wet-etched according to the difference from the design frequency, and the thickness of the resonance area of the shot 16 is changed. Refer to See Figure 18 to adjust the frequency. Repeat the test-etch steps several times to adjust the wafer frequency.
  • Step 7 Form the electrodes.
  • top electrode 30 and bottom electrode 40 are plated on shot 16 to form a quartz resonator.
  • the shot 16 is disposed between the bottom electrode 40 and the top electrode 30, wherein: the bottom electrode is on the lower side of the shot 16, the top electrode is on the upper side of the shot 16, and the electrode lead-out portion 42 of the bottom electrode 40 covers it.
  • the end surface of the shot particle 16 extends to the upper side of the shot particle 16 and is located on the same upper side of the shot particle 16 as the top electrode 30 .
  • the bottom electrode 40 and the top electrode 30 and the electrode lead-out part are formed by sputtering or evaporation.
  • a mechanical masking method can be used on the shot 16 shown in FIG. 18 .
  • An additional mask (not shown) having a pattern to expose areas corresponding to the bottom electrode 40 and the top electrode 30 and the electrode lead-out portion on the shot 16 is then formed by sputtering or evaporation. The electrode 40 and the top electrode 30 and the electrode lead-out are then removed.
  • the steps for forming quartz granules include:
  • Masks 20 are provided on both sides of the quartz wafer 10, and the masks are patterned using micro/nano electromechanical system lithography technology to expose the shot separation area;
  • the mask 20 on the preliminary shot is removed to obtain the quartz shot 16 .
  • the frequency modulation step or the step of forming final quartz particles may include:
  • Frequency measurement measuring the fundamental frequency of the resonant region of the quartz shot.
  • Thickness adjustment Adjusts the thickness of the resonant region of the quartz shot based on the difference between the measured frequency and the design frequency.
  • Figure 19 is a schematic flow chart of fundamental frequency adjustment of granules.
  • the frequency of the shot particles produced in Figures 1 to 5 needs to be measured. If the frequency of the resonance area of the shot particles meets the requirements, proceed to the next step, such as setting the electrode; if the frequency of the shot particles If the frequency of the resonance region does not meet the requirements, wet etching is used to thin the thickness of the shot until the measured thickness of the resonance region of the shot is consistent with the requirements.
  • the steps to form quartz granules include:
  • a mask is provided on one side of the quartz wafer, and the mask is patterned using a micro/nano electromechanical system lithography technique, and at least based on performing a mechanical dicing process on the quartz wafer to form quartz shot particles.
  • the present invention proposes a manufacturing method of quartz resonator, including the steps:
  • Forming quartz particles forming quartz particles 16 from the quartz wafer 10 based on at least micro/nano electromechanical system photolithography technology, the quartz particles having an inverse mesa structure;
  • Form an electrode layer form a bottom electrode and a top electrode on both sides of the particle, one of the top electrode and the bottom electrode is on one side of the particle, and the other electrode of the top electrode and the bottom electrode is on the other side of the particle , the electrode lead-out portion of the one electrode covers the end surface of the shot and extends to the other side of the shot so as to be on the same side of the shot as the other electrode.
  • the present invention also proposes a quartz resonator, including:
  • Quartz piezoelectric layer 10 is arranged between the bottom electrode and the top electrode
  • One of the top electrode and the bottom electrode is on one side of the piezoelectric layer, the other of the top electrode and the bottom electrode is on the other side of the piezoelectric layer, and the electrode lead-out part of the one electrode covers the piezoelectric layer.
  • the end surface extends to the other side of the piezoelectric layer so that it is on the same side of the piezoelectric layer as the other electrode;
  • the piezoelectric layer 10 has an inverted platform structure.
  • micro/nano electromechanical systems (M/NEMS) photolithography technology is used in combination with wet etching/dry etching to: make the size of the particles less than 1 mm ⁇ 1 mm; and/or The thickness of the resonant region of the shot particles is less than 40 ⁇ m or the fundamental frequency of the resonator formed based on the shot particles is above 40 MHz.
  • M/NEMS micro/nano electromechanical systems
  • micro/nano electromechanical system photolithography technology it is possible to obtain fine patterns for subsequent etching that facilitate the formation of particle sizes less than 1 mm ⁇ 1 mm, while based on wet etching/dry etching, it is possible to Obtain particles with a size less than 1mm ⁇ 1mm; based on wet etching/dry etching, it can replace the mechanical mask to obtain a quartz piezoelectric layer thickness less than 40 ⁇ m.
  • a boss can be provided at the boundary of the resonance area of the piezoelectric layer, which is conducive to optimizing the boundary conditions of the resonator and reducing the lateral sound wave leakage, thereby further improving the performance of the resonator.
  • the electrode lead-out portion of the top electrode and the electrode lead-out portion of the bottom electrode of the quartz resonator are on the same side of the piezoelectric layer, which facilitates electrical connection between the resonator and the packaging substrate, thereby facilitating packaging.
  • the resonant region refers to the overlapping region of the top electrode, bottom electrode, piezoelectric layer, and cavity or gap in the thickness direction of the piezoelectric layer in the formed quartz resonator.
  • the resonance area of the quartz wafer corresponds to the area of the quartz wafer that needs to be formed as a resonator;
  • the resonance area of the piezoelectric layer corresponds to the area of the piezoelectric layer that needs to be formed as the resonator.
  • the resonant region of the shot corresponds to the region in the shot that needs to be formed as the resonant region of the resonator.
  • the non-resonant region is a part outside the resonant region.
  • the non-resonant region of the piezoelectric layer it refers to the region outside the resonant region of the piezoelectric layer in the horizontal direction or transverse direction.
  • each numerical range except that it is clearly stated that it does not include the endpoint value, can be the endpoint value or the median value of each numerical range, which are all within the protection scope of the present invention. .
  • the above-mentioned quartz resonator may further include a packaging structure.
  • the quartz resonator according to the present invention can be used to form a quartz crystal oscillator chip or an electronic device including a quartz resonator.
  • the electronic device here may be an electronic component such as an oscillator, a communication device such as a walkie-talkie or a mobile phone, or a large-scale product using a quartz resonator such as an automobile.
  • the present invention also proposes an electronic device, including the above-mentioned quartz resonator.

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  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

A quartz resonator and a manufacturing method therefor, further relating to an electronic device. The quartz resonator comprises: a bottom electrode (40); a top electrode (30); and a quartz piezoelectric layer (10) disposed between the bottom electrode (40) and the top electrode (30). One of the top electrode (30) and the bottom electrode (40) is located at one side of the piezoelectric layer (10), and the other electrode of the top electrode (30) and the bottom electrode (40) is located at the other side of the piezoelectric layer (10); an electrode lead-out portion of the one electrode covers an end face of the piezoelectric layer (10) and extends to the other side of the piezoelectric layer (10), so as to be located on the same side of the piezoelectric layer (10) as the other electrode; and the piezoelectric layer (10) has an inverted-mesa structure.

Description

压电层为反高台结构的石英谐振器及其制造方法、电子器件Quartz resonator whose piezoelectric layer is an inverted platform structure, its manufacturing method, and electronic device 技术领域Technical field
本发明的实施例涉及半导体领域，尤其涉及一种压电层为反高台结构的石英谐振器及其制造方法，以及一种电子器件。Embodiments of the present invention relate to the field of semiconductors, and in particular to a quartz resonator whose piezoelectric layer is an inverse mesa structure, a manufacturing method thereof, and an electronic device.
背景技术Background technique
已有的晶片(石英晶振片)制造主要利用机械研磨对石英进行减薄，控制晶片谐振区域的膜厚度来控制频率。然后对减薄后的石英片利用线切割进行裂片，以获得满足尺寸要求的裸晶片。接着利用湿法刻蚀和等离子体处理等手段对裸晶片散粒经过反复调频，以获得满足频率要求的晶片(该方法下文简称散粒法)。Existing wafer (quartz crystal oscillator) manufacturing mainly uses mechanical grinding to thin the quartz, and controls the film thickness in the resonance area of the wafer to control the frequency. The thinned quartz sheet is then split using wire cutting to obtain a bare wafer that meets the size requirements. Wet etching and plasma treatment are then used to repeatedly perform frequency modulation on the bare wafer shot to obtain a wafer that meets the frequency requirements (this method is hereinafter referred to as the shot method).
散粒法的方案多年来被用于制作较低基频、较大尺寸的晶片。The shot method approach has been used for many years to produce lower fundamental frequency, larger size wafers.
然而，随着应用市场对高基频、小型化的晶片的需求日益增加，上述传统制造方案无法应对这一需求，主要问题包括：(1)机械研磨减薄方式在工业上难以获取用于高基频(40MHz及以上)的石英谐振器的石英薄片。具体的，高基频对应更薄的晶片厚度，随着晶片减薄至40μm以内，容易发生碎片，成品率大幅下降，石英薄片的基频越高，成品率越低，甚至无法获得成功。(2)线切割的方式难以获取尺寸小于1mm×1mm的晶片散粒，对于上述厚度减薄至40μm以内的石英薄片切割效果更差，良率大幅下降。上述两个因素使得传统方案无法满足高基频、小型化晶片制造要求。However, with the increasing demand for high fundamental frequency and miniaturized wafers in the application market, the above traditional manufacturing solutions cannot cope with this demand. The main problems include: (1) The mechanical grinding and thinning method is difficult to obtain in industry for high-frequency applications. Quartz flakes for quartz resonators with fundamental frequency (40MHz and above). Specifically, a high fundamental frequency corresponds to a thinner wafer thickness. As the wafer is thinned to less than 40 μm, fragments are prone to occur and the yield rate drops significantly. The higher the fundamental frequency of the quartz wafer, the lower the yield rate, and even failure to achieve success. (2) It is difficult to obtain wafer particles with a size of less than 1 mm × 1 mm by wire cutting. The cutting effect is even worse for the quartz flakes whose thickness is reduced to less than 40 μm, and the yield rate drops significantly. The above two factors make traditional solutions unable to meet the requirements for high fundamental frequency and miniaturized chip manufacturing.
还希望在晶圆级制造单颗谐振器的基础上，优化谐振器的边界条件、减少声波横向泄漏，从而进一步提高谐振器的性能。但是，通过现有的机械研磨减薄方式难以优化谐振器的边界条件。It is also hoped that on the basis of manufacturing a single resonator at the wafer level, the boundary conditions of the resonator can be optimized and the lateral leakage of sound waves can be reduced, thereby further improving the performance of the resonator. However, it is difficult to optimize the boundary conditions of the resonator through the existing mechanical grinding thinning method.
此外，现有的石英谐振器的顶电极的电极引出部和底电极的电极引出部分 别处于压电层的两侧，这存在封装时谐振器电极与封装基板或封装基底引出电极不在一个平面进而提高了电连接复杂度的技术问题。In addition, the electrode lead-out portion of the top electrode and the electrode lead-out portion of the bottom electrode of the conventional quartz resonator They are located on both sides of the piezoelectric layer. This causes a technical problem in that the resonator electrode and the packaging substrate or the lead-out electrode of the packaging substrate are not in the same plane during packaging, which increases the complexity of electrical connection.
发明内容Contents of the invention
为缓解或解决现有技术中的上述问题的至少一个方面，提出本发明。In order to alleviate or solve at least one aspect of the above-mentioned problems in the prior art, the present invention is proposed.
本发明提出一种基于微/纳机电系统(M/NEMS)光刻技术的石英晶片制造工艺，克服了上述传统散粒法面临的挑战，可以满足高基频、小型化的晶片制造需求，具有流程简单、工艺兼容性好、成品率高等特点。The present invention proposes a quartz wafer manufacturing process based on micro/nano electromechanical systems (M/NEMS) photolithography technology, which overcomes the challenges faced by the traditional shot method and can meet the needs of high fundamental frequency and miniaturization wafer manufacturing. It has It has the characteristics of simple process, good process compatibility and high yield rate.
根据本发明的实施例的一个方面，提出了一种石英谐振器，包括：According to an aspect of an embodiment of the present invention, a quartz resonator is proposed, including:
底电极；bottom electrode;
顶电极；和top electrode; and
石英压电层，设置在底电极与顶电极之间，Quartz piezoelectric layer, arranged between the bottom electrode and the top electrode,
其中：in:
顶电极和底电极中的一个电极处于压电层的一侧，顶电极和底电极中的另一个电极处于压电层的另一侧，所述一个电极的电极引出部覆盖所述压电层的端面且延伸到所述压电层的另一侧从而与所述另一个电极处于所述压电层的同一侧；One of the top electrode and the bottom electrode is on one side of the piezoelectric layer, the other of the top electrode and the bottom electrode is on the other side of the piezoelectric layer, and the electrode lead-out part of the one electrode covers the piezoelectric layer. The end surface extends to the other side of the piezoelectric layer so that it is on the same side of the piezoelectric layer as the other electrode;
所述压电层为反高台结构。The piezoelectric layer has an inverted platform structure.
根据本发明的实施例的另一方面，提出了一种石英谐振器的制造方法，包括步骤：According to another aspect of the embodiment of the present invention, a manufacturing method of a quartz resonator is proposed, including the steps:
形成石英散粒：从石英晶圆至少基于微/纳机电系统光刻技术形成石英散粒，所述石英散粒为反高台结构；和Forming quartz particles: forming quartz particles from a quartz wafer based on at least micro/nano electromechanical system lithography technology, the quartz particles having an inverted mesa structure; and
形成电极层：在散粒的两侧形成底电极和顶电极，顶电极和底电极中的一个电极处于散粒的一侧，顶电极和底电极中的另一个电极处于散粒的另一侧，所述一个电极的电极引出部覆盖所述散粒的端面且延伸到所述散粒的另一侧从而与所述另一个电极处于所述散粒的同一侧。Form an electrode layer: form a bottom electrode and a top electrode on both sides of the particle, one of the top electrode and the bottom electrode is on one side of the particle, and the other electrode of the top electrode and the bottom electrode is on the other side of the particle , the electrode lead-out portion of the one electrode covers the end surface of the shot and extends to the other side of the shot so as to be on the same side of the shot as the other electrode.
本发明的实施例还涉及一种电子器件，包括上述的石英谐振器。Embodiments of the present invention also relate to an electronic device, including the above-mentioned quartz resonator.
附图说明 Description of drawings
以下描述与附图可以更好地帮助理解本发明所公布的各种实施例中的这些和其他特点、优点，图中相同的附图标记始终表示相同的部件，其中：These and other features and advantages of various disclosed embodiments of the present invention may be better aided in understanding by the following description and accompanying drawings, in which like reference numerals refer to like parts throughout, wherein:
图1-6根据本发明的一个示例性实施例的石英谐振器的制作过程的截面示意图；1-6 are schematic cross-sectional views of the manufacturing process of a quartz resonator according to an exemplary embodiment of the present invention;
图7-12根据本发明的另一个示例性实施例的石英谐振器的制作过程的截面示意图；Figures 7-12 are schematic cross-sectional views of a manufacturing process of a quartz resonator according to another exemplary embodiment of the present invention;
图13-18根据本发明的还一个示例性实施例的石英谐振器的制作过程的截面示意图；Figures 13-18 are schematic cross-sectional views of the manufacturing process of a quartz resonator according to yet another exemplary embodiment of the present invention;
图19为散粒的基频调节的流程示意图。Figure 19 is a schematic flow chart of fundamental frequency adjustment of granules.
具体实施方式Detailed ways
下面通过实施例，并结合附图，对本发明的技术方案作进一步具体的说明。在说明书中，相同或相似的附图标号指示相同或相似的部件。下述参照附图对本发明实施方式的说明旨在对本发明的总体发明构思进行解释，而不应当理解为对本发明的一种限制。发明的一部分实施例，而并不是全部的实施例。基于本发明中的实施例，本领域普通技术人员所获得的所有其他实施例，都属于本发明保护的范围。The technical solution of the present invention will be further described in detail below through examples and in conjunction with the accompanying drawings. In the specification, the same or similar reference numbers indicate the same or similar components. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the general inventive concept of the present invention and should not be understood as a limitation of the present invention. Some, but not all, embodiments of the invention. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art fall within the scope of protection of the present invention.
本发明涉及微/纳机电系统(M/NEMS)和石英晶振制造工艺，涉及一种采用部分MEMS工艺与传统散粒制作工艺结合的新型石英谐振器制作流程，用于制造高精度、小型化的石英谐振器。该方法不仅集成了MEMS制作工艺尺寸精度高、便于小型化的特点，同时利用了散粒测试与调频的制程，特别是针对高基频(40MHz以上)晶片制造具有流程简单、效率高、成品率高等优势。The invention relates to micro/nano electromechanical systems (M/NEMS) and quartz crystal oscillator manufacturing processes. It relates to a new quartz resonator manufacturing process that combines part of the MEMS process with the traditional particle manufacturing process, and is used to manufacture high-precision, miniaturized oscillators. Quartz resonator. This method not only integrates the characteristics of high dimensional accuracy and easy miniaturization of the MEMS manufacturing process, but also utilizes the process of shot testing and frequency modulation. Especially for high fundamental frequency (above 40MHz) wafer manufacturing, it has a simple process, high efficiency, and high yield rate. Higher advantages.
下面参照图1-图19示例性说明根据本发明的石英谐振器的制作过程。本发明中，附图标记示意性说明如下：The manufacturing process of the quartz resonator according to the present invention will be exemplified below with reference to FIGS. 1 to 19 . In the present invention, the reference signs are schematically explained as follows:
10：石英晶圆或晶圆或压电层。10: Quartz wafer or wafer or piezoelectric layer.
12：谐振区域。12: Resonance area.
14：划片通槽或裂片通槽。14: Slicing slot or split slot.
16：散粒。16: Particles.
18：裂片预刻蚀槽。18: Splinter pre-etched groove.
20：掩膜层或掩膜。 20: Mask layer or mask.
22：掩膜槽。22: Mask slot.
30：顶电极，材料可选钼、钌、金、铝、镁、钨、铜，钛、铱、锇、铬或以上金属的复合或其合金等。30: Top electrode, the material can be molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or composites of the above metals or their alloys, etc.
40：底电极，材料可选钼、钌、金、铝、镁、钨、铜，钛、铱、锇、铬或以上金属的复合或其合金等。40: Bottom electrode, the material can be molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or composites of the above metals or their alloys, etc.
42：底电极电极引出部，材料可选钼、钌、金、铝、镁、钨、铜，钛、铱、锇、铬或以上金属的复合或其合金等。在可选的实施例中，顶电极及其电极引出部、底电极及其电极引出部可以是相同的金属材料。42: The bottom electrode electrode lead-out part can be made of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or composites of the above metals or their alloys. In alternative embodiments, the top electrode and its electrode lead-out portion, the bottom electrode and its electrode lead-out portion may be made of the same metal material.
在本发明的具体实施例中，各部分以其中可行的一种材料为例进行说明，但不限于此。In the specific embodiments of the present invention, each part is described using a feasible material as an example, but is not limited thereto.
图1-图6根据本发明的一个示例性实施例的石英谐振器的制作过程的截面示意图。下面参照图1-图6示例性说明石英谐振器的制作过程，其包括步骤如下：1-6 are schematic cross-sectional views of a manufacturing process of a quartz resonator according to an exemplary embodiment of the present invention. The following is an example of the manufacturing process of a quartz resonator with reference to Figures 1-6, which includes the following steps:
步骤1：制作掩膜。如图1所示，利用微/纳机电系统光刻的方式在石英晶圆10的两面基于微/纳机电系统光刻技术制作掩膜的图案，石英晶圆上对应于谐振区域12的部分露出，其余部分均覆盖掩膜层20。这里，对于后续使用湿法刻蚀(例如图1-图6所示实施例的步骤2)，掩膜可以是金属掩膜，例如铬金(上面一层金、下面一层铬)，或者其他惰性金属；对于后续使用干法刻蚀(例如图1-图6所示实施例的步骤2)，掩膜可以是SU-8胶，或者其他光刻胶。掩膜20的材料也可以适用于其他实施例，后面不再赘述。Step 1: Make the mask. As shown in Figure 1, micro/nano electromechanical system photolithography is used to create mask patterns on both sides of the quartz wafer 10 based on micro/nano electromechanical system photolithography technology, and the portion of the quartz wafer corresponding to the resonance region 12 is exposed. , and the remaining parts cover the mask layer 20 . Here, for the subsequent use of wet etching (for example, step 2 of the embodiment shown in FIGS. 1 to 6 ), the mask may be a metal mask, such as chromium gold (a layer of gold on the top and a layer of chromium on the bottom), or other Inert metal; for subsequent use of dry etching (for example, step 2 of the embodiment shown in Figures 1 to 6), the mask can be SU-8 glue or other photoresists. The material of the mask 20 can also be applied to other embodiments, which will not be described again below.
需要指出的是，在图1-图4中，仅仅示出了石英晶圆上的单个散粒对应的区域，如能够理解的，在石英晶圆10上存在多个图1-图4所示的区域，图5所示的散粒16是由图1-图4中所示的多个区域分别形成的。在其他的实施例中，也应做相似的理解，后面不再赘述。It should be noted that in FIGS. 1 to 4 , only the area corresponding to a single shot on the quartz wafer is shown. As can be understood, there are multiple particles on the quartz wafer 10 as shown in FIGS. 1 to 4 area, the shot particles 16 shown in Figure 5 are respectively formed from multiple areas shown in Figures 1-4. In other embodiments, similar understanding should be made, which will not be described again.
步骤2：湿法刻蚀。利用湿法刻蚀的方式对谐振区域12进行减薄，至设计厚度值。刻蚀后的石英晶圆10的结构如图2所示。虽然没有示出，步骤2也可以用干法刻蚀代替，或者将湿法刻蚀与干法刻蚀结合。Step 2: Wet etching. Wet etching is used to thin the resonant region 12 to a designed thickness. The structure of the etched quartz wafer 10 is shown in FIG. 2 . Although not shown, step 2 can also be replaced by dry etching, or wet etching can be combined with dry etching.
步骤3：去除掩膜20。如图3所示，利用刻蚀液逐层去除掩膜20，可选的，对移除了掩膜20后的石英晶圆进行清洗。Step 3: Remove mask 20. As shown in FIG. 3 , the etching solution is used to remove the mask 20 layer by layer. Optionally, the quartz wafer after the mask 20 is removed is cleaned.
步骤4：机械划片。在一个实施例中，可以将步骤3后的石英晶圆贴在软膜 (未示出)上，利用机械划片的方式将石英晶圆10切割成散粒，在图4中示出了划片通槽14，在图4中，通槽14之间为散粒16。然后解胶，从而获得如后面图5所示的分散的石英散粒16。对于机械划片的具体步骤这里不做限定，只要是可以实现将石英晶圆10切割成散粒的步骤均在本发明的划片的步骤内。采用机械划片的方式，可以在散粒的端面形成平坦面。Step 4: Mechanical scribing. In one embodiment, the quartz wafer after step 3 can be attached to the soft film (not shown), the quartz wafer 10 is cut into particles by mechanical dicing. In FIG. 4 , the dicing through grooves 14 are shown. In FIG. 4 , there are particles 16 between the through grooves 14 . The gel is then degummed, thereby obtaining dispersed quartz particles 16 as shown in FIG. 5 later. The specific steps of mechanical dicing are not limited here, as long as the steps that can cut the quartz wafer 10 into shot particles are included in the dicing steps of the present invention. Using mechanical scribing, a flat surface can be formed on the end face of the granules.
步骤5：测试与调频。对散粒(如图5所示)逐个进行频率测试，然后根据与设计频率的差值对散粒进行湿法刻蚀，改变散粒16的谐振区域的厚度，以调节频率。如此多次重复测试-刻蚀的步骤来调节晶片频率。Step 5: Test and FM. The frequency of the shot (as shown in Figure 5) is tested one by one, and then the shot is wet-etched according to the difference from the design frequency, and the thickness of the resonance area of the shot 16 is changed to adjust the frequency. Repeat the test-etch steps several times to adjust the wafer frequency.
步骤6：形成电极。如图6所示，在散粒16上镀顶电极30和底电极40以形成石英谐振器。如图6所示，散粒16设置在底电极40与顶电极30之间，其中：底电极处于散粒16的下侧，顶电极处于散粒16的上侧，底电极40的电极引出部42覆盖散粒16的端面且延伸到散粒16的上侧从而与顶电极30同处于散粒16的上侧。在可选的实施例中，以溅射或蒸镀的方式形成底电极40和顶电极30以及电极引出部，更具体的，可以先在图5所示的散粒16上以机械掩膜法设置另外掩膜(未示出)，该另外掩膜具有图案以在散粒16上露出对应于底电极40和顶电极30以及电极引出部的区域，然后以溅射或蒸镀的方式形成底电极40和顶电极30以及电极引出部，之后，移除该另外掩膜。Step 6: Form the electrodes. As shown in Figure 6, top electrode 30 and bottom electrode 40 are plated on shot 16 to form a quartz resonator. As shown in FIG. 6 , the shot particles 16 are arranged between the bottom electrode 40 and the top electrode 30 , wherein: the bottom electrode is on the lower side of the shot particles 16 , the top electrode is on the upper side of the shot particles 16 , and the electrode lead-out portion of the bottom electrode 40 42 covers the end surface of the shot 16 and extends to the upper side of the shot 16 so as to be on the same upper side of the shot 16 as the top electrode 30 . In an optional embodiment, the bottom electrode 40 and the top electrode 30 and the electrode lead-out part are formed by sputtering or evaporation. More specifically, a mechanical masking method can be used on the shot 16 shown in FIG. 5 . An additional mask (not shown) having a pattern to expose areas corresponding to the bottom electrode 40 and the top electrode 30 and the electrode lead-out portion on the shot 16 is then formed by sputtering or evaporation. The electrode 40 and the top electrode 30 and the electrode lead-out are then removed.
在上述的实施例中，如果散粒为双面反高台结构，则在石英晶圆的两侧设置掩膜，以及利用微/纳机电系统光刻技术对两侧的掩膜图案化；而如果散粒为单面反高台结构，则在石英晶圆的两侧设置掩膜，以及利用微/纳机电系统光刻技术仅对一侧掩膜图案化。In the above embodiment, if the particles have a double-sided reverse mesas structure, masks are set on both sides of the quartz wafer, and the masks on both sides are patterned using micro/nano electromechanical system photolithography technology; and if If the shot has a single-sided reverse mesa structure, masks are set on both sides of the quartz wafer, and only one side of the mask is patterned using micro/nano electromechanical system lithography technology.
基于图1-图6，形成石英散粒的步骤包括：Based on Figures 1-6, the steps for forming quartz granules include:
在石英晶圆10的两侧或一侧设置掩膜20，以及利用微/纳机电系统光刻技术对掩膜图案化以露出石英晶圆的谐振区域12；A mask 20 is provided on both sides or one side of the quartz wafer 10, and the mask is patterned using micro/nano electromechanical system lithography technology to expose the resonant region 12 of the quartz wafer;
利用湿法刻蚀和/或干法刻蚀对谐振区域12减薄；Use wet etching and/or dry etching to thin the resonance region 12;
移除掩膜20；removemask20;
以机械划片的方式将移除了掩膜后的石英晶圆切割以获得散粒16。The quartz wafer with the mask removed is cut by mechanical dicing to obtain shot 16.
图7-图12根据本发明的另一个示例性实施例的石英谐振器的制作过程的截面示意图，该实施例与图1-图6中所示实施例的不同在于，在该实施例中，机械划片步骤在制作掩膜步骤之后以及湿法刻蚀之前，这样做的好处是提高了划 片时石英晶片的机械强度，有助于提高划片良率和小尺寸晶片的划片良率。下面参照图7-图12示例性说明石英谐振器的制作过程，其具体步骤如下：7 to 12 are schematic cross-sectional views of a manufacturing process of a quartz resonator according to another exemplary embodiment of the present invention. The difference between this embodiment and the embodiment shown in FIGS. 1 to 6 is that in this embodiment, The mechanical scribing step is performed after the mask making step and before wet etching. The advantage of this is to improve the scribing efficiency. The mechanical strength of the quartz wafer during slicing helps to improve the dicing yield and the dicing yield of small-size wafers. The following is an example of the manufacturing process of a quartz resonator with reference to Figures 7-12. The specific steps are as follows:
步骤1：制作掩膜。如图7所示，利用微/纳机电系统光刻的方式在石英晶圆10的两面制作掩膜的图案，石英晶圆上对应于谐振区域12的部分露出，其余部分均覆盖掩膜层20。Step 1: Make the mask. As shown in Figure 7, micro/nano electromechanical system photolithography is used to create mask patterns on both sides of the quartz wafer 10. The portion of the quartz wafer corresponding to the resonance area 12 is exposed, and the remaining portions are covered with the mask layer 20. .
步骤2：机械划片。在一个实施例中，可以将步骤1后的石英晶圆贴在软膜(未示出)上，利用机械划片的方式将石英晶圆10切割成散粒，在图8中示出了划片通槽14，在图8中，通槽14之间为带掩膜20的初步散粒。然后解胶，从而获得如后面图9所示的分散的带掩膜20的初步散粒。对于机械划片的具体步骤这里不做限定，只要是可以实现将石英晶圆10切割成散粒的步骤均在本发明的划片的步骤内。采用机械划片的方式，可以在散粒的端面形成平坦面。Step 2: Mechanical scribing. In one embodiment, the quartz wafer after step 1 can be attached to a soft film (not shown), and the quartz wafer 10 can be cut into particles by mechanical scribing. The scribing is shown in Figure 8 Chip through grooves 14, in Figure 8, between the through grooves 14 are preliminary shot with mask 20. The gel is then degummed, thereby obtaining dispersed preliminary shot particles with a mask 20 as shown in FIG. 9 later. The specific steps of mechanical dicing are not limited here, as long as the steps that can cut the quartz wafer 10 into shot particles are included in the dicing steps of the present invention. Using mechanical scribing, a flat surface can be formed on the end face of the granules.
步骤3：湿法刻蚀。利用湿法刻蚀的方式对谐振区域12进行减薄，至设计厚度值。刻蚀后的石英晶圆10的结构如图10所示。虽然没有示出，步骤3也可以用干法刻蚀代替，或者将湿法刻蚀与干法刻蚀结合。Step 3: Wet etching. Wet etching is used to thin the resonant region 12 to a designed thickness. The structure of the etched quartz wafer 10 is shown in FIG. 10 . Although not shown, step 3 can also be replaced by dry etching, or wet etching can be combined with dry etching.
步骤4：去除掩膜20。如图11所示，利用刻蚀液逐层去除掩膜20，可选的，对移除了掩膜20后的散粒进行清洗。Step 4: Remove mask 20. As shown in FIG. 11 , the mask 20 is removed layer by layer using an etching solution. Optionally, the particles after the mask 20 is removed are cleaned.
步骤5：测试与调频。对散粒(如图11所示)逐个进行频率测试，然后根据与设计频率的差值对散粒进行湿法刻蚀，改变散粒16的谐振区域的厚度，以调节频率。如此多次重复测试-刻蚀的步骤来调节晶片频率。Step 5: Test and FM. The frequency of the shot (as shown in Figure 11) is tested one by one, and then the shot is wet-etched according to the difference from the design frequency, and the thickness of the resonance area of the shot 16 is changed to adjust the frequency. Repeat the test-etch steps several times to adjust the wafer frequency.
步骤6：形成电极。如图12所示，在散粒16上镀顶电极30和底电极40以形成石英谐振器。如图12所示，散粒16设置在底电极40与顶电极30之间，其中：底电极处于散粒16的下侧，顶电极处于散粒16的上侧，底电极40的电极引出部42覆盖散粒16的端面且延伸到散粒16的上侧从而与顶电极30同处于散粒16的上侧。在可选的实施例中，以溅射或蒸镀的方式形成底电极40和顶电极30以及电极引出部，更具体的，可以先在图11所示的散粒16上以机械掩膜法设置掩膜(未示出)，该掩膜具有图案以在散粒16上露出对应于底电极40和顶电极30以及电极引出部的区域，然后以溅射或蒸镀的方式形成底电极40和顶电极30以及电极引出部，之后，移除该掩膜。Step 6: Form the electrodes. As shown in Figure 12, a top electrode 30 and a bottom electrode 40 are plated on the shot 16 to form a quartz resonator. As shown in Figure 12, the shot particles 16 are arranged between the bottom electrode 40 and the top electrode 30, wherein: the bottom electrode is located on the lower side of the shot particles 16, the top electrode is located on the upper side of the shot particles 16, and the electrode lead-out portion of the bottom electrode 40 42 covers the end surface of the shot 16 and extends to the upper side of the shot 16 so as to be on the same upper side of the shot 16 as the top electrode 30 . In an optional embodiment, the bottom electrode 40 and the top electrode 30 and the electrode lead-out part are formed by sputtering or evaporation. More specifically, a mechanical masking method can be used on the shot 16 shown in FIG. 11 first. A mask (not shown) having a pattern to expose areas corresponding to the bottom electrode 40 and the top electrode 30 and the electrode lead-out portion on the shot 16 is provided, and then the bottom electrode 40 is formed by sputtering or evaporation. and the top electrode 30 and the electrode lead-out portion, and then the mask is removed.
在上述的实施例中，如果散粒为双面反高台结构，则在石英晶圆的两侧设置掩膜，以及利用微/纳机电系统光刻技术对两侧的掩膜图案化；而如果散粒为 单面反高台结构，则在石英晶圆的两侧设置掩膜，以及利用微/纳机电系统光刻技术仅对一侧掩膜图案化。In the above embodiment, if the particles have a double-sided reverse mesas structure, masks are set on both sides of the quartz wafer, and the masks on both sides are patterned using micro/nano electromechanical system photolithography technology; and if Particles are For the single-sided reverse mesa structure, masks are set on both sides of the quartz wafer, and only one side of the mask is patterned using micro/nano electromechanical system lithography technology.
基于图7-图12，形成石英散粒的步骤包括：Based on Figures 7-12, the steps for forming quartz granules include:
在石英晶圆10的两侧或一侧设置掩膜20，以及利用微/纳机电系统光刻技术对掩膜图案化以露出石英晶圆的谐振区域12；A mask 20 is provided on both sides or one side of the quartz wafer 10, and the mask is patterned using micro/nano electromechanical system lithography technology to expose the resonant region 12 of the quartz wafer;
在掩膜区域以机械划片的方式切割，以获得包括了掩膜的初步散粒；Cutting in the mask area by mechanical scribing to obtain preliminary shot including the mask;
利用湿法刻蚀和/或干法刻蚀对初步散粒的谐振区域减薄；Use wet etching and/or dry etching to thin the resonance area of the preliminary shot;
移除减薄后的初步散粒上的掩膜以获得石英散粒16。The mask on the thinned preliminary shot is removed to obtain quartz shot 16.
图13-图19根据本发明的还一个示例性实施例的石英谐振器的制作过程的截面示意图。下面参照图13-图19示例性说明石英谐振器的制作过程，其具体步骤如下：13 to 19 are schematic cross-sectional views of a manufacturing process of a quartz resonator according to yet another exemplary embodiment of the present invention. The following is an example of the manufacturing process of the quartz resonator with reference to Figures 13-19. The specific steps are as follows:
步骤1：制作掩膜。如图13所示，利用微/纳机电系统光刻的方式在石英晶圆10的两面制作掩膜的图案，石英晶圆上对应于谐振区域12的部分被掩膜层20覆盖，掩膜层20中设置有掩膜槽22。Step 1: Make the mask. As shown in Figure 13, micro/nano electromechanical system photolithography is used to create mask patterns on both sides of the quartz wafer 10. The portion of the quartz wafer corresponding to the resonance region 12 is covered by the mask layer 20. The mask layer A mask groove 22 is provided in 20 .
步骤2：初步湿法刻蚀。在一个实施例中，可以将步骤1后的石英晶圆10执行初步刻蚀，如图14所示，在掩膜槽22对应的位置，石英晶圆10上出现了裂片预刻蚀槽18。此时，石英晶圆10上的谐振区域仍然被掩膜20所覆盖。虽然没有示出，步骤2也可以用干法刻蚀代替，或者将湿法刻蚀与干法刻蚀结合。Step 2: Preliminary wet etching. In one embodiment, preliminary etching can be performed on the quartz wafer 10 after step 1. As shown in FIG. 14 , a split pre-etching groove 18 appears on the quartz wafer 10 at a position corresponding to the mask groove 22 . At this time, the resonance area on the quartz wafer 10 is still covered by the mask 20 . Although not shown, step 2 can also be replaced by dry etching, or wet etching can be combined with dry etching.
步骤3：掩膜进一步图案化。在一个实施例中，可以利用微/纳机电系统光刻将步骤2后的石英晶圆10上的掩膜进一步图形化，以露出谐振区域12所在区域，如图15所示。Step 3: The mask is further patterned. In one embodiment, micro/nano electromechanical system photolithography can be used to further pattern the mask on the quartz wafer 10 after step 2 to expose the area where the resonance region 12 is located, as shown in FIG. 15 .
步骤4：湿法裂片。在一个实施例中，以湿法刻蚀的方式形成多个散粒，在图16中示出了裂片通槽14，在图16中，通槽14之间为带掩膜20的初步散粒，如图16所示。在步骤4中，利用刻蚀液在掩膜槽22处刻蚀以形成裂片通槽14，在形成裂片通槽14的同时，谐振区域12被同时减薄。采用湿法裂片的方式，形成的散粒的端面包括与散粒的顶侧或底侧成非90度角的斜面，如图16所示。Step 4: Wet split. In one embodiment, a plurality of shot particles are formed by wet etching. In FIG. 16 , split grooves 14 are shown. In FIG. 16 , between the through grooves 14 are preliminary shots with a mask 20 . , as shown in Figure 16. In step 4, an etching solution is used to etch the mask groove 22 to form the lobed through grooves 14. While the lobed through grooves 14 are formed, the resonant region 12 is simultaneously thinned. Using the wet splitting method, the end surface of the formed particles includes a slope that is not at a 90-degree angle to the top or bottom side of the particles, as shown in Figure 16.
步骤5：去除掩膜20。利用刻蚀液逐层去除掩膜20，以得到如图17所示的散粒16，可选的，对移除了掩膜20后的散粒进行清洗。Step 5: Remove mask 20. The mask 20 is removed layer by layer using an etching solution to obtain the shot particles 16 as shown in FIG. 17 . Optionally, the shot particles after the mask 20 is removed are cleaned.
步骤6：测试与调频。对散粒(如图17所示)逐个进行频率测试，然后根据与设计频率的差值对散粒进行湿法刻蚀，改变散粒16的谐振区域的厚度，参 见图18，以调节频率。如此多次重复测试-刻蚀的步骤来调节晶片频率。Step 6: Test and FM. The frequency of the shot (as shown in Figure 17) is tested one by one, and then the shot is wet-etched according to the difference from the design frequency, and the thickness of the resonance area of the shot 16 is changed. Refer to See Figure 18 to adjust the frequency. Repeat the test-etch steps several times to adjust the wafer frequency.
步骤7：形成电极。参照图12，在散粒16上镀顶电极30和底电极40以形成石英谐振器。参照图12，散粒16设置在底电极40与顶电极30之间，其中：底电极处于散粒16的下侧，顶电极处于散粒16的上侧，底电极40的电极引出部42覆盖散粒16的端面且延伸到散粒16的上侧从而与顶电极30同处于散粒16的上侧。在可选的实施例中，以溅射或蒸镀的方式形成底电极40和顶电极30以及电极引出部，更具体的，可以先在图18所示的散粒16上以机械掩膜法设置另外掩膜(未示出)，该另外掩膜具有图案以在散粒16上露出对应于底电极40和顶电极30以及电极引出部的区域，然后以溅射或蒸镀的方式形成底电极40和顶电极30以及电极引出部，之后，移除该另外掩膜。Step 7: Form the electrodes. Referring to Figure 12, top electrode 30 and bottom electrode 40 are plated on shot 16 to form a quartz resonator. Referring to Figure 12, the shot 16 is disposed between the bottom electrode 40 and the top electrode 30, wherein: the bottom electrode is on the lower side of the shot 16, the top electrode is on the upper side of the shot 16, and the electrode lead-out portion 42 of the bottom electrode 40 covers it. The end surface of the shot particle 16 extends to the upper side of the shot particle 16 and is located on the same upper side of the shot particle 16 as the top electrode 30 . In an optional embodiment, the bottom electrode 40 and the top electrode 30 and the electrode lead-out part are formed by sputtering or evaporation. More specifically, a mechanical masking method can be used on the shot 16 shown in FIG. 18 . An additional mask (not shown) having a pattern to expose areas corresponding to the bottom electrode 40 and the top electrode 30 and the electrode lead-out portion on the shot 16 is then formed by sputtering or evaporation. The electrode 40 and the top electrode 30 and the electrode lead-out are then removed.
基于图13-图18，形成石英散粒的步骤包括：Based on Figures 13-18, the steps for forming quartz granules include:
在石英晶圆10的两侧设置掩膜20，以及利用微/纳机电系统光刻技术对掩膜图案化以露出散粒分离区域；Masks 20 are provided on both sides of the quartz wafer 10, and the masks are patterned using micro/nano electromechanical system lithography technology to expose the shot separation area;
对散粒分离区域湿法刻蚀从而以湿法裂片的方式形成包括掩膜的初步散粒；Wet etching the shot separation area to form preliminary shots including a mask in a wet cleavage manner;
利用湿法刻蚀对初步散粒的谐振区域减薄；Use wet etching to thin the resonance area of the preliminary shot;
移除初步散粒上的掩膜20以获得石英散粒16。The mask 20 on the preliminary shot is removed to obtain the quartz shot 16 .
在上述的实施例中，对于调频步骤或者形成最终的石英散粒的步骤，可以包括：In the above embodiments, the frequency modulation step or the step of forming final quartz particles may include:
频率测量：测量石英散粒的谐振区域的基频；和Frequency measurement: measuring the fundamental frequency of the resonant region of the quartz shot; and
厚度调节：基于测得的频率与设计频率的差值调节石英散粒的谐振区域的厚度。Thickness adjustment: Adjusts the thickness of the resonant region of the quartz shot based on the difference between the measured frequency and the design frequency.
具体的，图19为散粒的基频调节的流程示意图。如图19所示，例如在图1-图5中制得的散粒，需要对其测量频率，如果散粒的谐振区域的频率符合要求，则进入下一步，例如设置电极；如果散粒的谐振区域的频率不符合要求，则利用湿法刻蚀的方式减薄散粒的厚度，直至经测量散粒的谐振区域的厚度与要求的一致。Specifically, Figure 19 is a schematic flow chart of fundamental frequency adjustment of granules. As shown in Figure 19, for example, the frequency of the shot particles produced in Figures 1 to 5 needs to be measured. If the frequency of the resonance area of the shot particles meets the requirements, proceed to the next step, such as setting the electrode; if the frequency of the shot particles If the frequency of the resonance region does not meet the requirements, wet etching is used to thin the thickness of the shot until the measured thickness of the resonance region of the shot is consistent with the requirements.
在上述的实施例中，存在调频步骤或者减薄散粒的步骤，但是在用于制造石英谐振器的晶圆的厚度符合基频要求的情况下，可以免去该步骤。相应的，形成石英散粒的步骤包括：In the above embodiments, there is a frequency modulation step or a shot thinning step, but this step can be omitted if the thickness of the wafer used to manufacture the quartz resonator meets the fundamental frequency requirements. Correspondingly, the steps to form quartz granules include:
在石英晶圆的两侧或一侧设置掩膜，以及利用微/纳机电系统光刻技术对掩 膜图案化，和至少基于对石英晶圆执行湿法刻蚀工艺以形成石英散粒；或者Setting masks on both sides or one side of the quartz wafer, and using micro/nano electromechanical system lithography technology to Film patterning, and based at least on performing a wet etching process on a quartz wafer to form quartz shot; or
在石英晶圆的一侧设置掩膜，以及利用微/纳机电系统光刻技术对掩膜图案化，和至少基于对石英晶圆执行机械划片工艺以形成石英散粒。A mask is provided on one side of the quartz wafer, and the mask is patterned using a micro/nano electromechanical system lithography technique, and at least based on performing a mechanical dicing process on the quartz wafer to form quartz shot particles.
基于以上，本发明提出了一种石英谐振器的制造方法，包括步骤：Based on the above, the present invention proposes a manufacturing method of quartz resonator, including the steps:
形成石英散粒：从石英晶圆10至少基于微/纳机电系统光刻技术形成石英散粒16，石英散粒为反高台结构；和Forming quartz particles: forming quartz particles 16 from the quartz wafer 10 based on at least micro/nano electromechanical system photolithography technology, the quartz particles having an inverse mesa structure; and
形成电极层：在散粒的两侧形成底电极和顶电极，顶电极和底电极中的一个电极处于散粒的一侧，顶电极和底电极中的另一个电极处于散粒的另一侧，所述一个电极的电极引出部覆盖所述散粒的端面且延伸到所述散粒的另一侧从而与所述另一个电极处于所述散粒的同一侧。Form an electrode layer: form a bottom electrode and a top electrode on both sides of the particle, one of the top electrode and the bottom electrode is on one side of the particle, and the other electrode of the top electrode and the bottom electrode is on the other side of the particle , the electrode lead-out portion of the one electrode covers the end surface of the shot and extends to the other side of the shot so as to be on the same side of the shot as the other electrode.
基于以上，本发明也提出了一种石英谐振器，包括：Based on the above, the present invention also proposes a quartz resonator, including:
底电极40；bottom electrode 40;
顶电极30；和top electrode 30; and
石英压电层10，设置在底电极与顶电极之间，Quartz piezoelectric layer 10 is arranged between the bottom electrode and the top electrode,
其中：in:
顶电极和底电极中的一个电极处于压电层的一侧，顶电极和底电极中的另一个电极处于压电层的另一侧，所述一个电极的电极引出部覆盖所述压电层的端面且延伸到所述压电层的另一侧从而与所述另一个电极处于所述压电层的同一侧；One of the top electrode and the bottom electrode is on one side of the piezoelectric layer, the other of the top electrode and the bottom electrode is on the other side of the piezoelectric layer, and the electrode lead-out part of the one electrode covers the piezoelectric layer. The end surface extends to the other side of the piezoelectric layer so that it is on the same side of the piezoelectric layer as the other electrode;
所述压电层10为反高台结构。The piezoelectric layer 10 has an inverted platform structure.
在本发明的实施例中，采用微/纳机电系统(M/NEMS)光刻技术与湿法刻蚀/干法刻蚀相结合，可以：使得散粒的尺寸小于1mm×1mm；和/或使得散粒的谐振区域的厚度小于40μm或者基于散粒形成的谐振器的基频在40MHz以上。具体的，基于微/纳机电系统光刻技术，可以获得用于后续刻蚀的、便于形成小于1mm×1mm的散粒尺寸的精细图案，而基于湿法刻蚀/干法刻蚀，则可以获得小于1mm×1mm尺寸的散粒；基于湿法刻蚀/干法刻蚀，可以替代机械掩膜获得小于40μm的石英压电层厚度。In embodiments of the present invention, micro/nano electromechanical systems (M/NEMS) photolithography technology is used in combination with wet etching/dry etching to: make the size of the particles less than 1 mm × 1 mm; and/or The thickness of the resonant region of the shot particles is less than 40 μm or the fundamental frequency of the resonator formed based on the shot particles is above 40 MHz. Specifically, based on micro/nano electromechanical system photolithography technology, it is possible to obtain fine patterns for subsequent etching that facilitate the formation of particle sizes less than 1 mm × 1 mm, while based on wet etching/dry etching, it is possible to Obtain particles with a size less than 1mm×1mm; based on wet etching/dry etching, it can replace the mechanical mask to obtain a quartz piezoelectric layer thickness less than 40μm.
在本发明的实施例中，通过掩膜+湿法刻蚀/干法刻蚀，可以在压电层的谐振区域的边界设置有凸台，这有利于优化谐振器的边界条件、减少声波横向泄漏，从而进一步提高谐振器的性能。 In embodiments of the present invention, through mask + wet etching/dry etching, a boss can be provided at the boundary of the resonance area of the piezoelectric layer, which is conducive to optimizing the boundary conditions of the resonator and reducing the lateral sound wave leakage, thereby further improving the performance of the resonator.
在本发明的实施例中，石英谐振器的顶电极的电极引出部和底电极的电极引出部处于压电层的同一侧，这有利于谐振器与封装基底进行电连接，进而有利于封装。In embodiments of the present invention, the electrode lead-out portion of the top electrode and the electrode lead-out portion of the bottom electrode of the quartz resonator are on the same side of the piezoelectric layer, which facilitates electrical connection between the resonator and the packaging substrate, thereby facilitating packaging.
在本发明中，谐振区域是指在形成的石英谐振器中，顶电极、底电极、压电层以及空腔或空隙在压电层的厚度方向上的重合区域。在本发明中，石英晶圆的谐振区域对应于在石英晶圆中需要形成为谐振器的谐振区域的区域；压电层的谐振区域对应于在压电层中需要形成为谐振器的谐振区域的区域；散粒的谐振区域对应于在该散粒中需要形成为谐振器的谐振区域的区域。在本发明中，非谐振区域是谐振区域之外的部分，例如，对于压电层的非谐振区域，指的是在压电层的谐振区域在水平方向或横向方向外侧的区域。In the present invention, the resonant region refers to the overlapping region of the top electrode, bottom electrode, piezoelectric layer, and cavity or gap in the thickness direction of the piezoelectric layer in the formed quartz resonator. In the present invention, the resonance area of the quartz wafer corresponds to the area of the quartz wafer that needs to be formed as a resonator; the resonance area of the piezoelectric layer corresponds to the area of the piezoelectric layer that needs to be formed as the resonator. The resonant region of the shot corresponds to the region in the shot that needs to be formed as the resonant region of the resonator. In the present invention, the non-resonant region is a part outside the resonant region. For example, for the non-resonant region of the piezoelectric layer, it refers to the region outside the resonant region of the piezoelectric layer in the horizontal direction or transverse direction.
需要指出的是，在本发明中，各个数值范围，除了明确指出不包含端点值之外，除了可以为端点值，还可以为各个数值范围的中值，这些均在本发明的保护范围之内。It should be pointed out that in the present invention, each numerical range, except that it is clearly stated that it does not include the endpoint value, can be the endpoint value or the median value of each numerical range, which are all within the protection scope of the present invention. .
在本发明的一个实施例中，上述提及的石英谐振器还可以包括封装结构。In one embodiment of the present invention, the above-mentioned quartz resonator may further include a packaging structure.
如本领域技术人员能够理解的，根据本发明的石英谐振器可以用于形成石英晶振芯片或包括石英谐振器的电子器件。这里的电子器件，可以是例如振荡器等电子元件，也可以例如对讲机、手机等的通信设备，还可以是汽车等应用了石英谐振器的大型产品。As those skilled in the art can understand, the quartz resonator according to the present invention can be used to form a quartz crystal oscillator chip or an electronic device including a quartz resonator. The electronic device here may be an electronic component such as an oscillator, a communication device such as a walkie-talkie or a mobile phone, or a large-scale product using a quartz resonator such as an automobile.
基于以上，本发明还提出了一种电子器件，包括上述的石英谐振器。Based on the above, the present invention also proposes an electronic device, including the above-mentioned quartz resonator.
尽管已经示出和描述了本发明的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行变化，本发明的范围由所附权利要求及其等同物限定。 Although embodiments of the invention have been shown and described, it will be understood by those of ordinary skill in the art that changes may be made in these embodiments without departing from the principles and spirit of the invention. The scope of the invention is determined by are defined in the appended claims and their equivalents.

Claims (16)

  1. 一种石英谐振器，包括：A quartz resonator including:
    底电极；bottom electrode;
    顶电极；和top electrode; and
    石英压电层，设置在底电极与顶电极之间，Quartz piezoelectric layer, arranged between the bottom electrode and the top electrode,
    其中：in:
    顶电极和底电极中的一个电极处于压电层的一侧，顶电极和底电极中的另一个电极处于压电层的另一侧，所述一个电极的电极引出部覆盖所述压电层的端面且延伸到所述压电层的另一侧从而与所述另一个电极处于所述压电层的同一侧；One of the top electrode and the bottom electrode is on one side of the piezoelectric layer, the other of the top electrode and the bottom electrode is on the other side of the piezoelectric layer, and the electrode lead-out part of the one electrode covers the piezoelectric layer. The end surface extends to the other side of the piezoelectric layer so that it is on the same side of the piezoelectric layer as the other electrode;
    所述压电层为反高台结构。The piezoelectric layer has an inverted platform structure.
  2. 根据权利要求1所述的谐振器，其中：The resonator of claim 1, wherein:
    压电层的所述端面与压电层的所述一侧成直角。The end face of the piezoelectric layer is at right angles to the side of the piezoelectric layer.
  3. 根据权利要求1所述的谐振器，其中：The resonator of claim 1, wherein:
    压电层的所述端面包括与压电层的所述一侧成非90角度的斜面。The end surface of the piezoelectric layer includes a slope that is at an angle other than 90 degrees to the side of the piezoelectric layer.
  4. 根据权利要求1所述的谐振器，其中：The resonator of claim 1, wherein:
    所述压电层为单面反高台结构。The piezoelectric layer has a single-sided reverse platform structure.
  5. 根据权利要求1所述的谐振器，其中：The resonator of claim 1, wherein:
    所述压电层为双面反高台结构。The piezoelectric layer has a double-sided reverse platform structure.
  6. 根据权利要求1所述的谐振器，还包括：The resonator of claim 1, further comprising:
    封装结构。Package structure.
  7. 根据权利要求1-6中任一项所述的谐振器，其中：The resonator according to any one of claims 1-6, wherein:
    所述压电层的尺寸小于1mm×1mm；和/或The size of the piezoelectric layer is less than 1mm×1mm; and/or
    所述压电层的谐振区域的厚度小于40μm或者所述谐振器的基频在40MHz以上。The thickness of the resonant region of the piezoelectric layer is less than 40 μm or the fundamental frequency of the resonator is above 40 MHz.
  8. 一种石英谐振器的制造方法，包括步骤：A method for manufacturing a quartz resonator, including the steps:
    形成石英散粒：从石英晶圆至少基于微/纳机电系统光刻技术形成石英散粒，所述石英散粒为反高台结构；和 Forming quartz particles: forming quartz particles from a quartz wafer based on at least micro/nano electromechanical system lithography technology, the quartz particles having an inverted mesa structure; and
    形成电极层：在散粒的两侧形成底电极和顶电极，顶电极和底电极中的一个电极处于散粒的一侧，顶电极和底电极中的另一个电极处于散粒的另一侧，所述一个电极的电极引出部覆盖所述散粒的端面且延伸到所述散粒的另一侧从而与所述另一个电极处于所述散粒的同一侧。Form an electrode layer: form a bottom electrode and a top electrode on both sides of the particle, one of the top electrode and the bottom electrode is on one side of the particle, and the other electrode of the top electrode and the bottom electrode is on the other side of the particle , the electrode lead-out portion of the one electrode covers the end surface of the shot and extends to the other side of the shot so as to be on the same side of the shot as the other electrode.
  9. 根据权利要求8所述的方法，其中，形成电极层的步骤包括：The method of claim 8, wherein forming the electrode layer includes:
    以溅射或蒸镀的方式形成底电极和顶电极以及电极引出部。The bottom electrode, the top electrode and the electrode lead-out part are formed by sputtering or evaporation.
  10. 根据权利要求8所述的方法，其中，形成石英散粒的步骤包括：The method of claim 8, wherein the step of forming quartz particles includes:
    在石英晶圆的两侧或一侧设置掩膜，以及利用微/纳机电系统光刻技术对掩膜图案化以露出晶圆的谐振区域；Setting masks on both sides or one side of the quartz wafer, and patterning the masks using micro/nano electromechanical system lithography technology to expose the resonant regions of the wafer;
    利用湿法刻蚀和/或干法刻蚀对谐振区域减薄；Use wet etching and/or dry etching to thin the resonance area;
    移除掩膜；remove mask;
    以机械划片的方式将移除了掩膜后的石英晶圆切割以获得石英散粒。The quartz wafer with the mask removed is cut by mechanical dicing to obtain quartz particles.
  11. 根据权利要求8所述的方法，其中，形成石英散粒的步骤包括：The method of claim 8, wherein the step of forming quartz particles includes:
    在石英晶圆的两侧或一侧设置掩膜，以及利用微/纳机电系统光刻技术对掩膜图案化以露出晶圆的谐振区域；Setting masks on both sides or one side of the quartz wafer, and patterning the masks using micro/nano electromechanical system lithography technology to expose the resonant regions of the wafer;
    在掩膜区域以机械划片的方式切割，以获得包括了掩膜的初步散粒；Cutting in the mask area by mechanical scribing to obtain preliminary shot including the mask;
    利用湿法刻蚀和/或干法刻蚀对初步散粒的谐振区域减薄；Use wet etching and/or dry etching to thin the resonance area of the preliminary shot;
    移除减薄后的初步散粒上的掩膜以获得石英散粒。Remove the mask on the thinned preliminary shot to obtain the quartz shot.
  12. 根据权利要求8所述的方法，其中，形成石英散粒的步骤包括：The method of claim 8, wherein the step of forming quartz particles includes:
    在石英晶圆的两侧或一侧设置掩膜，以及利用微/纳机电系统光刻技术对掩膜图案化以露出散粒分离区域；Providing masks on both sides or one side of the quartz wafer, and patterning the masks using micro/nano electromechanical systems lithography to expose shot separation regions;
    对散粒分离区域湿法刻蚀从而以湿法裂片和/干法裂片的方式形成包括掩膜的初步散粒；Wet etching the shot separation area to form preliminary shots including masks in the form of wet cleavage and/or dry cleavage;
    利用湿法刻蚀对初步散粒的谐振区域减薄；Use wet etching to thin the resonance area of the preliminary shot;
    移除减薄后的初步散粒上的掩膜以获得石英散粒。Remove the mask on the thinned preliminary shot to obtain the quartz shot.
  13. 根据权利要求8-12中任一项所述的方法，其中，形成石英散粒的步骤还包括：The method according to any one of claims 8-12, wherein the step of forming quartz particles further includes:
    频率测量：测量石英散粒的谐振区域的基频；和Frequency measurement: measuring the fundamental frequency of the resonant region of the quartz shot; and
    厚度调节：基于测得的频率与设计频率的差值以湿法刻蚀的方式调节石英散粒的谐振区域的厚度。 Thickness adjustment: The thickness of the resonant region of the quartz shot is adjusted by wet etching based on the difference between the measured frequency and the design frequency.
  14. 根据权利要求8所述的方法，其中，形成石英散粒的步骤包括：The method of claim 8, wherein the step of forming quartz particles includes:
    在石英晶圆的两侧或一侧设置掩膜，以及利用微/纳机电系统光刻技术对掩膜图案化，和至少基于对晶圆执行湿法刻蚀工艺以形成石英散粒；或者or providing masks on both sides or one side of the quartz wafer and patterning the masks using micro/nano electromechanical systems lithography and at least performing a wet etching process on the wafer to form quartz particles; or
    在石英晶圆的一侧设置掩膜，以及利用微/纳机电系统光刻技术对掩膜图案化，和至少基于对晶圆执行机械划片工艺以形成石英散粒。A mask is provided on one side of the quartz wafer, and the mask is patterned using micro/nano electromechanical systems lithography, and based at least on performing a mechanical dicing process on the wafer to form quartz shot particles.
  15. 根据权利要求8所述的方法，其中，形成电极层的步骤包括：The method of claim 8, wherein forming the electrode layer includes:
    以机械掩膜法在所述散粒上形成掩膜，所述掩膜具有图案以在散粒上露出对应于底电极、顶电极以及电极引出部的区域；Forming a mask on the shot particles using a mechanical masking method, the mask having a pattern to expose areas corresponding to the bottom electrode, the top electrode and the electrode lead-out portion on the shot particles;
    以溅射或蒸镀的方式形成底电极、顶电极以及电极引出部；Form the bottom electrode, top electrode and electrode lead-out part by sputtering or evaporation;
    移除散粒上的掩膜。Remove the mask from the shot.
  16. 一种电子器件，包括根据权利要求1-7中任一项所述的石英谐振器。 An electronic device including the quartz resonator according to any one of claims 1-7.
PCT/CN2023/110647 2022-08-05 2023-08-02 Quartz resonator having piezoelectric layer with inverted-mesa structure, manufacturing method therefor and electronic device WO2024027733A1 (en)

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