WO2024027733A1 - Résonateur à quartz ayant une couche piézoélectrique à structure mesa inversée, son procédé de fabrication et dispositif électronique - Google Patents

Résonateur à quartz ayant une couche piézoélectrique à structure mesa inversée, son procédé de fabrication et dispositif électronique Download PDF

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WO2024027733A1
WO2024027733A1 PCT/CN2023/110647 CN2023110647W WO2024027733A1 WO 2024027733 A1 WO2024027733 A1 WO 2024027733A1 CN 2023110647 W CN2023110647 W CN 2023110647W WO 2024027733 A1 WO2024027733 A1 WO 2024027733A1
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Prior art keywords
quartz
electrode
shot
piezoelectric layer
mask
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PCT/CN2023/110647
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English (en)
Chinese (zh)
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庞慰
张孟伦
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天津大学
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Publication of WO2024027733A1 publication Critical patent/WO2024027733A1/fr

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/027—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the microelectro-mechanical [MEMS] type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414—Resonance frequency
    • H03H2003/0421—Modification of the thickness of an element
    • H03H2003/0428—Modification of the thickness of an element of an electrode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414—Resonance frequency
    • H03H2003/0421—Modification of the thickness of an element
    • H03H2003/0435—Modification of the thickness of an element of a piezoelectric layer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H2009/155—Constructional features of resonators consisting of piezoelectric or electrostrictive material using MEMS techniques

Definitions

  • Embodiments of the present invention relate to the field of semiconductors, and in particular to a quartz resonator whose piezoelectric layer is an inverse mesa structure, a manufacturing method thereof, and an electronic device.
  • Existing wafer (quartz crystal oscillator) manufacturing mainly uses mechanical grinding to thin the quartz, and controls the film thickness in the resonance area of the wafer to control the frequency.
  • the thinned quartz sheet is then split using wire cutting to obtain a bare wafer that meets the size requirements.
  • Wet etching and plasma treatment are then used to repeatedly perform frequency modulation on the bare wafer shot to obtain a wafer that meets the frequency requirements (this method is hereinafter referred to as the shot method).
  • the shot method approach has been used for many years to produce lower fundamental frequency, larger size wafers.
  • the mechanical grinding and thinning method is difficult to obtain in industry for high-frequency applications. Quartz flakes for quartz resonators with fundamental frequency (40MHz and above). Specifically, a high fundamental frequency corresponds to a thinner wafer thickness. As the wafer is thinned to less than 40 ⁇ m, fragments are prone to occur and the yield rate drops significantly. The higher the fundamental frequency of the quartz wafer, the lower the yield rate, and even failure to achieve success. (2) It is difficult to obtain wafer particles with a size of less than 1 mm ⁇ 1 mm by wire cutting. The cutting effect is even worse for the quartz flakes whose thickness is reduced to less than 40 ⁇ m, and the yield rate drops significantly. The above two factors make traditional solutions unable to meet the requirements for high fundamental frequency and miniaturized chip manufacturing.
  • the boundary conditions of the resonator can be optimized and the lateral leakage of sound waves can be reduced, thereby further improving the performance of the resonator.
  • the electrode lead-out portion of the top electrode and the electrode lead-out portion of the bottom electrode of the conventional quartz resonator are located on both sides of the piezoelectric layer. This causes a technical problem in that the resonator electrode and the packaging substrate or the lead-out electrode of the packaging substrate are not in the same plane during packaging, which increases the complexity of electrical connection.
  • the present invention proposes a quartz wafer manufacturing process based on micro/nano electromechanical systems (M/NEMS) photolithography technology, which overcomes the challenges faced by the traditional shot method and can meet the needs of high fundamental frequency and miniaturization wafer manufacturing. It has It has the characteristics of simple process, good process compatibility and high yield rate.
  • M/NEMS micro/nano electromechanical systems
  • a quartz resonator including:
  • Quartz piezoelectric layer arranged between the bottom electrode and the top electrode
  • One of the top electrode and the bottom electrode is on one side of the piezoelectric layer, the other of the top electrode and the bottom electrode is on the other side of the piezoelectric layer, and the electrode lead-out part of the one electrode covers the piezoelectric layer.
  • the end surface extends to the other side of the piezoelectric layer so that it is on the same side of the piezoelectric layer as the other electrode;
  • the piezoelectric layer has an inverted platform structure.
  • a manufacturing method of a quartz resonator including the steps:
  • Forming quartz particles forming quartz particles from a quartz wafer based on at least micro/nano electromechanical system lithography technology, the quartz particles having an inverted mesa structure;
  • Form an electrode layer form a bottom electrode and a top electrode on both sides of the particle, one of the top electrode and the bottom electrode is on one side of the particle, and the other electrode of the top electrode and the bottom electrode is on the other side of the particle , the electrode lead-out portion of the one electrode covers the end surface of the shot and extends to the other side of the shot so as to be on the same side of the shot as the other electrode.
  • Embodiments of the present invention also relate to an electronic device, including the above-mentioned quartz resonator.
  • 1-6 are schematic cross-sectional views of the manufacturing process of a quartz resonator according to an exemplary embodiment of the present invention
  • Figures 7-12 are schematic cross-sectional views of a manufacturing process of a quartz resonator according to another exemplary embodiment of the present invention.
  • Figures 13-18 are schematic cross-sectional views of the manufacturing process of a quartz resonator according to yet another exemplary embodiment of the present invention.
  • Figure 19 is a schematic flow chart of fundamental frequency adjustment of granules.
  • the invention relates to micro/nano electromechanical systems (M/NEMS) and quartz crystal oscillator manufacturing processes. It relates to a new quartz resonator manufacturing process that combines part of the MEMS process with the traditional particle manufacturing process, and is used to manufacture high-precision, miniaturized oscillators. Quartz resonator. This method not only integrates the characteristics of high dimensional accuracy and easy miniaturization of the MEMS manufacturing process, but also utilizes the process of shot testing and frequency modulation. Especially for high fundamental frequency (above 40MHz) wafer manufacturing, it has a simple process, high efficiency, and high yield rate. Higher advantages.
  • Top electrode the material can be molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or composites of the above metals or their alloys, etc.
  • the material can be molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or composites of the above metals or their alloys, etc.
  • the bottom electrode electrode lead-out part can be made of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or composites of the above metals or their alloys.
  • the top electrode and its electrode lead-out portion, the bottom electrode and its electrode lead-out portion may be made of the same metal material.
  • each part is described using a feasible material as an example, but is not limited thereto.
  • 1-6 are schematic cross-sectional views of a manufacturing process of a quartz resonator according to an exemplary embodiment of the present invention.
  • the following is an example of the manufacturing process of a quartz resonator with reference to Figures 1-6, which includes the following steps:
  • Step 1 Make the mask.
  • micro/nano electromechanical system photolithography is used to create mask patterns on both sides of the quartz wafer 10 based on micro/nano electromechanical system photolithography technology, and the portion of the quartz wafer corresponding to the resonance region 12 is exposed. , and the remaining parts cover the mask layer 20 .
  • wet etching for example, step 2 of the embodiment shown in FIGS.
  • the mask may be a metal mask, such as chromium gold (a layer of gold on the top and a layer of chromium on the bottom), or other Inert metal; for subsequent use of dry etching (for example, step 2 of the embodiment shown in Figures 1 to 6), the mask can be SU-8 glue or other photoresists.
  • the material of the mask 20 can also be applied to other embodiments, which will not be described again below.
  • FIGS. 1 to 4 only the area corresponding to a single shot on the quartz wafer is shown. As can be understood, there are multiple particles on the quartz wafer 10 as shown in FIGS. 1 to 4 area, the shot particles 16 shown in Figure 5 are respectively formed from multiple areas shown in Figures 1-4. In other embodiments, similar understanding should be made, which will not be described again.
  • Step 2 Wet etching. Wet etching is used to thin the resonant region 12 to a designed thickness.
  • the structure of the etched quartz wafer 10 is shown in FIG. 2 .
  • step 2 can also be replaced by dry etching, or wet etching can be combined with dry etching.
  • Step 3 Remove mask 20. As shown in FIG. 3 , the etching solution is used to remove the mask 20 layer by layer. Optionally, the quartz wafer after the mask 20 is removed is cleaned.
  • Step 4 Mechanical scribing.
  • the quartz wafer after step 3 can be attached to the soft film (not shown), the quartz wafer 10 is cut into particles by mechanical dicing.
  • the dicing through grooves 14 are shown.
  • the gel is then degummed, thereby obtaining dispersed quartz particles 16 as shown in FIG. 5 later.
  • the specific steps of mechanical dicing are not limited here, as long as the steps that can cut the quartz wafer 10 into shot particles are included in the dicing steps of the present invention.
  • a flat surface can be formed on the end face of the granules.
  • Step 5 Test and FM.
  • the frequency of the shot (as shown in Figure 5) is tested one by one, and then the shot is wet-etched according to the difference from the design frequency, and the thickness of the resonance area of the shot 16 is changed to adjust the frequency. Repeat the test-etch steps several times to adjust the wafer frequency.
  • Step 6 Form the electrodes.
  • top electrode 30 and bottom electrode 40 are plated on shot 16 to form a quartz resonator.
  • the shot particles 16 are arranged between the bottom electrode 40 and the top electrode 30 , wherein: the bottom electrode is on the lower side of the shot particles 16 , the top electrode is on the upper side of the shot particles 16 , and the electrode lead-out portion of the bottom electrode 40 42 covers the end surface of the shot 16 and extends to the upper side of the shot 16 so as to be on the same upper side of the shot 16 as the top electrode 30 .
  • the bottom electrode 40 and the top electrode 30 and the electrode lead-out part are formed by sputtering or evaporation.
  • a mechanical masking method can be used on the shot 16 shown in FIG. 5 .
  • An additional mask (not shown) having a pattern to expose areas corresponding to the bottom electrode 40 and the top electrode 30 and the electrode lead-out portion on the shot 16 is then formed by sputtering or evaporation. The electrode 40 and the top electrode 30 and the electrode lead-out are then removed.
  • the particles have a double-sided reverse mesas structure
  • masks are set on both sides of the quartz wafer, and the masks on both sides are patterned using micro/nano electromechanical system photolithography technology
  • the shot has a single-sided reverse mesa structure
  • masks are set on both sides of the quartz wafer, and only one side of the mask is patterned using micro/nano electromechanical system lithography technology.
  • the steps for forming quartz granules include:
  • a mask 20 is provided on both sides or one side of the quartz wafer 10, and the mask is patterned using micro/nano electromechanical system lithography technology to expose the resonant region 12 of the quartz wafer;
  • the quartz wafer with the mask removed is cut by mechanical dicing to obtain shot 16.
  • FIGS. 7 to 12 are schematic cross-sectional views of a manufacturing process of a quartz resonator according to another exemplary embodiment of the present invention.
  • the difference between this embodiment and the embodiment shown in FIGS. 1 to 6 is that in this embodiment, The mechanical scribing step is performed after the mask making step and before wet etching. The advantage of this is to improve the scribing efficiency.
  • the mechanical strength of the quartz wafer during slicing helps to improve the dicing yield and the dicing yield of small-size wafers.
  • the following is an example of the manufacturing process of a quartz resonator with reference to Figures 7-12. The specific steps are as follows:
  • Step 1 Make the mask. As shown in Figure 7, micro/nano electromechanical system photolithography is used to create mask patterns on both sides of the quartz wafer 10. The portion of the quartz wafer corresponding to the resonance area 12 is exposed, and the remaining portions are covered with the mask layer 20. .
  • Step 2 Mechanical scribing.
  • the quartz wafer after step 1 can be attached to a soft film (not shown), and the quartz wafer 10 can be cut into particles by mechanical scribing.
  • the scribing is shown in Figure 8 Chip through grooves 14, in Figure 8, between the through grooves 14 are preliminary shot with mask 20.
  • the gel is then degummed, thereby obtaining dispersed preliminary shot particles with a mask 20 as shown in FIG. 9 later.
  • the specific steps of mechanical dicing are not limited here, as long as the steps that can cut the quartz wafer 10 into shot particles are included in the dicing steps of the present invention.
  • a flat surface can be formed on the end face of the granules.
  • Step 3 Wet etching. Wet etching is used to thin the resonant region 12 to a designed thickness. The structure of the etched quartz wafer 10 is shown in FIG. 10 . Although not shown, step 3 can also be replaced by dry etching, or wet etching can be combined with dry etching.
  • Step 4 Remove mask 20. As shown in FIG. 11 , the mask 20 is removed layer by layer using an etching solution. Optionally, the particles after the mask 20 is removed are cleaned.
  • Step 5 Test and FM.
  • the frequency of the shot (as shown in Figure 11) is tested one by one, and then the shot is wet-etched according to the difference from the design frequency, and the thickness of the resonance area of the shot 16 is changed to adjust the frequency. Repeat the test-etch steps several times to adjust the wafer frequency.
  • Step 6 Form the electrodes.
  • a top electrode 30 and a bottom electrode 40 are plated on the shot 16 to form a quartz resonator.
  • the shot particles 16 are arranged between the bottom electrode 40 and the top electrode 30, wherein: the bottom electrode is located on the lower side of the shot particles 16, the top electrode is located on the upper side of the shot particles 16, and the electrode lead-out portion of the bottom electrode 40 42 covers the end surface of the shot 16 and extends to the upper side of the shot 16 so as to be on the same upper side of the shot 16 as the top electrode 30 .
  • the bottom electrode 40 and the top electrode 30 and the electrode lead-out part are formed by sputtering or evaporation.
  • a mechanical masking method can be used on the shot 16 shown in FIG. 11 first.
  • a mask (not shown) having a pattern to expose areas corresponding to the bottom electrode 40 and the top electrode 30 and the electrode lead-out portion on the shot 16 is provided, and then the bottom electrode 40 is formed by sputtering or evaporation. and the top electrode 30 and the electrode lead-out portion, and then the mask is removed.
  • the particles have a double-sided reverse mesas structure
  • masks are set on both sides of the quartz wafer, and the masks on both sides are patterned using micro/nano electromechanical system photolithography technology
  • Particles are For the single-sided reverse mesa structure, masks are set on both sides of the quartz wafer, and only one side of the mask is patterned using micro/nano electromechanical system lithography technology.
  • the steps for forming quartz granules include:
  • a mask 20 is provided on both sides or one side of the quartz wafer 10, and the mask is patterned using micro/nano electromechanical system lithography technology to expose the resonant region 12 of the quartz wafer;
  • the mask on the thinned preliminary shot is removed to obtain quartz shot 16.
  • FIG. 13 to 19 are schematic cross-sectional views of a manufacturing process of a quartz resonator according to yet another exemplary embodiment of the present invention.
  • the following is an example of the manufacturing process of the quartz resonator with reference to Figures 13-19.
  • the specific steps are as follows:
  • Step 1 Make the mask. As shown in Figure 13, micro/nano electromechanical system photolithography is used to create mask patterns on both sides of the quartz wafer 10. The portion of the quartz wafer corresponding to the resonance region 12 is covered by the mask layer 20. The mask layer A mask groove 22 is provided in 20 .
  • Step 2 Preliminary wet etching.
  • preliminary etching can be performed on the quartz wafer 10 after step 1.
  • a split pre-etching groove 18 appears on the quartz wafer 10 at a position corresponding to the mask groove 22 .
  • the resonance area on the quartz wafer 10 is still covered by the mask 20 .
  • step 2 can also be replaced by dry etching, or wet etching can be combined with dry etching.
  • Step 3 The mask is further patterned.
  • micro/nano electromechanical system photolithography can be used to further pattern the mask on the quartz wafer 10 after step 2 to expose the area where the resonance region 12 is located, as shown in FIG. 15 .
  • Step 4 Wet split.
  • a plurality of shot particles are formed by wet etching.
  • split grooves 14 are shown.
  • between the through grooves 14 are preliminary shots with a mask 20 . , as shown in Figure 16.
  • an etching solution is used to etch the mask groove 22 to form the lobed through grooves 14. While the lobed through grooves 14 are formed, the resonant region 12 is simultaneously thinned.
  • the end surface of the formed particles includes a slope that is not at a 90-degree angle to the top or bottom side of the particles, as shown in Figure 16.
  • Step 5 Remove mask 20.
  • the mask 20 is removed layer by layer using an etching solution to obtain the shot particles 16 as shown in FIG. 17 .
  • the shot particles after the mask 20 is removed are cleaned.
  • Step 6 Test and FM.
  • the frequency of the shot (as shown in Figure 17) is tested one by one, and then the shot is wet-etched according to the difference from the design frequency, and the thickness of the resonance area of the shot 16 is changed. Refer to See Figure 18 to adjust the frequency. Repeat the test-etch steps several times to adjust the wafer frequency.
  • Step 7 Form the electrodes.
  • top electrode 30 and bottom electrode 40 are plated on shot 16 to form a quartz resonator.
  • the shot 16 is disposed between the bottom electrode 40 and the top electrode 30, wherein: the bottom electrode is on the lower side of the shot 16, the top electrode is on the upper side of the shot 16, and the electrode lead-out portion 42 of the bottom electrode 40 covers it.
  • the end surface of the shot particle 16 extends to the upper side of the shot particle 16 and is located on the same upper side of the shot particle 16 as the top electrode 30 .
  • the bottom electrode 40 and the top electrode 30 and the electrode lead-out part are formed by sputtering or evaporation.
  • a mechanical masking method can be used on the shot 16 shown in FIG. 18 .
  • An additional mask (not shown) having a pattern to expose areas corresponding to the bottom electrode 40 and the top electrode 30 and the electrode lead-out portion on the shot 16 is then formed by sputtering or evaporation. The electrode 40 and the top electrode 30 and the electrode lead-out are then removed.
  • the steps for forming quartz granules include:
  • Masks 20 are provided on both sides of the quartz wafer 10, and the masks are patterned using micro/nano electromechanical system lithography technology to expose the shot separation area;
  • the mask 20 on the preliminary shot is removed to obtain the quartz shot 16 .
  • the frequency modulation step or the step of forming final quartz particles may include:
  • Frequency measurement measuring the fundamental frequency of the resonant region of the quartz shot.
  • Thickness adjustment Adjusts the thickness of the resonant region of the quartz shot based on the difference between the measured frequency and the design frequency.
  • Figure 19 is a schematic flow chart of fundamental frequency adjustment of granules.
  • the frequency of the shot particles produced in Figures 1 to 5 needs to be measured. If the frequency of the resonance area of the shot particles meets the requirements, proceed to the next step, such as setting the electrode; if the frequency of the shot particles If the frequency of the resonance region does not meet the requirements, wet etching is used to thin the thickness of the shot until the measured thickness of the resonance region of the shot is consistent with the requirements.
  • the steps to form quartz granules include:
  • a mask is provided on one side of the quartz wafer, and the mask is patterned using a micro/nano electromechanical system lithography technique, and at least based on performing a mechanical dicing process on the quartz wafer to form quartz shot particles.
  • the present invention proposes a manufacturing method of quartz resonator, including the steps:
  • Forming quartz particles forming quartz particles 16 from the quartz wafer 10 based on at least micro/nano electromechanical system photolithography technology, the quartz particles having an inverse mesa structure;
  • Form an electrode layer form a bottom electrode and a top electrode on both sides of the particle, one of the top electrode and the bottom electrode is on one side of the particle, and the other electrode of the top electrode and the bottom electrode is on the other side of the particle , the electrode lead-out portion of the one electrode covers the end surface of the shot and extends to the other side of the shot so as to be on the same side of the shot as the other electrode.
  • the present invention also proposes a quartz resonator, including:
  • Quartz piezoelectric layer 10 is arranged between the bottom electrode and the top electrode
  • One of the top electrode and the bottom electrode is on one side of the piezoelectric layer, the other of the top electrode and the bottom electrode is on the other side of the piezoelectric layer, and the electrode lead-out part of the one electrode covers the piezoelectric layer.
  • the end surface extends to the other side of the piezoelectric layer so that it is on the same side of the piezoelectric layer as the other electrode;
  • the piezoelectric layer 10 has an inverted platform structure.
  • micro/nano electromechanical systems (M/NEMS) photolithography technology is used in combination with wet etching/dry etching to: make the size of the particles less than 1 mm ⁇ 1 mm; and/or The thickness of the resonant region of the shot particles is less than 40 ⁇ m or the fundamental frequency of the resonator formed based on the shot particles is above 40 MHz.
  • M/NEMS micro/nano electromechanical systems
  • micro/nano electromechanical system photolithography technology it is possible to obtain fine patterns for subsequent etching that facilitate the formation of particle sizes less than 1 mm ⁇ 1 mm, while based on wet etching/dry etching, it is possible to Obtain particles with a size less than 1mm ⁇ 1mm; based on wet etching/dry etching, it can replace the mechanical mask to obtain a quartz piezoelectric layer thickness less than 40 ⁇ m.
  • a boss can be provided at the boundary of the resonance area of the piezoelectric layer, which is conducive to optimizing the boundary conditions of the resonator and reducing the lateral sound wave leakage, thereby further improving the performance of the resonator.
  • the electrode lead-out portion of the top electrode and the electrode lead-out portion of the bottom electrode of the quartz resonator are on the same side of the piezoelectric layer, which facilitates electrical connection between the resonator and the packaging substrate, thereby facilitating packaging.
  • the resonant region refers to the overlapping region of the top electrode, bottom electrode, piezoelectric layer, and cavity or gap in the thickness direction of the piezoelectric layer in the formed quartz resonator.
  • the resonance area of the quartz wafer corresponds to the area of the quartz wafer that needs to be formed as a resonator;
  • the resonance area of the piezoelectric layer corresponds to the area of the piezoelectric layer that needs to be formed as the resonator.
  • the resonant region of the shot corresponds to the region in the shot that needs to be formed as the resonant region of the resonator.
  • the non-resonant region is a part outside the resonant region.
  • the non-resonant region of the piezoelectric layer it refers to the region outside the resonant region of the piezoelectric layer in the horizontal direction or transverse direction.
  • each numerical range except that it is clearly stated that it does not include the endpoint value, can be the endpoint value or the median value of each numerical range, which are all within the protection scope of the present invention. .
  • the above-mentioned quartz resonator may further include a packaging structure.
  • the quartz resonator according to the present invention can be used to form a quartz crystal oscillator chip or an electronic device including a quartz resonator.
  • the electronic device here may be an electronic component such as an oscillator, a communication device such as a walkie-talkie or a mobile phone, or a large-scale product using a quartz resonator such as an automobile.
  • the present invention also proposes an electronic device, including the above-mentioned quartz resonator.

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  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

L'invention concerne un résonateur à quartz et son procédé de fabrication, se rapportant en outre à un dispositif électronique. Le résonateur à quartz comprend : une électrode inférieure (40) ; une électrode supérieure (30) ; et une couche piézoélectrique de quartz (10) disposée entre l'électrode inférieure (40) et l'électrode supérieure (30). L'une de l'électrode supérieure (30) et de l'électrode inférieure (40) est située sur un côté de la couche piézoélectrique (10), et l'autre électrode de l'électrode supérieure (30) et de l'électrode inférieure (40) est située sur l'autre côté de la couche piézoélectrique (10) ; une partie de sortie d'électrode de la première électrode recouvre une face d'extrémité de la couche piézoélectrique (10) et s'étend vers l'autre côté de la couche piézoélectrique (10), de façon à être située sur le même côté de la couche piézoélectrique (10) que l'autre électrode ; et la couche piézoélectrique (10) a une structure mesa inversée.
PCT/CN2023/110647 2022-08-05 2023-08-02 Résonateur à quartz ayant une couche piézoélectrique à structure mesa inversée, son procédé de fabrication et dispositif électronique WO2024027733A1 (fr)

Applications Claiming Priority (2)

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CN202210959238.1 2022-08-05
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JP2001085970A (ja) * 1999-09-10 2001-03-30 Toyo Commun Equip Co Ltd 高安定圧電発振器用振動子
CN111146328A (zh) * 2019-12-31 2020-05-12 诺思(天津)微系统有限责任公司 单晶压电结构及具有其的电子设备
CN111245397A (zh) * 2019-12-06 2020-06-05 天津大学 体声波谐振器及制造方法、体声波谐振器单元、滤波器及电子设备
CN111342799A (zh) * 2018-12-18 2020-06-26 天津大学 具有扩大的释放通道的体声波谐振器、滤波器、电子设备
CN113285685A (zh) * 2021-03-05 2021-08-20 天津大学 石英薄膜体声波谐振器及其加工方法、电子设备
CN113452335A (zh) * 2020-03-26 2021-09-28 中国科学院微电子研究所 一种石英晶体谐振器的加工方法及装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001085970A (ja) * 1999-09-10 2001-03-30 Toyo Commun Equip Co Ltd 高安定圧電発振器用振動子
CN111342799A (zh) * 2018-12-18 2020-06-26 天津大学 具有扩大的释放通道的体声波谐振器、滤波器、电子设备
CN111245397A (zh) * 2019-12-06 2020-06-05 天津大学 体声波谐振器及制造方法、体声波谐振器单元、滤波器及电子设备
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CN113452335A (zh) * 2020-03-26 2021-09-28 中国科学院微电子研究所 一种石英晶体谐振器的加工方法及装置
CN113285685A (zh) * 2021-03-05 2021-08-20 天津大学 石英薄膜体声波谐振器及其加工方法、电子设备

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