CN117559947A - Quartz resonator with anti-high piezoelectric layer structure, manufacturing method thereof and electronic device - Google Patents

Quartz resonator with anti-high piezoelectric layer structure, manufacturing method thereof and electronic device Download PDF

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Publication number
CN117559947A
CN117559947A CN202210959238.1A CN202210959238A CN117559947A CN 117559947 A CN117559947 A CN 117559947A CN 202210959238 A CN202210959238 A CN 202210959238A CN 117559947 A CN117559947 A CN 117559947A
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China
Prior art keywords
shot
electrode
quartz
mask
piezoelectric layer
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Chinese (zh)
Inventor
庞慰
张孟伦
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Tianjin University
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Tianjin University
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Priority to CN202210959238.1A priority Critical patent/CN117559947A/en
Priority to PCT/CN2023/110647 priority patent/WO2024027733A1/en
Publication of CN117559947A publication Critical patent/CN117559947A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/027—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the microelectro-mechanical [MEMS] type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414—Resonance frequency
    • H03H2003/0421—Modification of the thickness of an element
    • H03H2003/0428—Modification of the thickness of an element of an electrode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414—Resonance frequency
    • H03H2003/0421—Modification of the thickness of an element
    • H03H2003/0435—Modification of the thickness of an element of a piezoelectric layer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H2009/155—Constructional features of resonators consisting of piezoelectric or electrostrictive material using MEMS techniques

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

The present invention relates to a quartz resonator and a method of manufacturing the same, the quartz resonator comprising: a bottom electrode; a top electrode; and a quartz piezoelectric layer disposed between the bottom electrode and the top electrode, wherein: one electrode of the top electrode and the bottom electrode is positioned on one side of the piezoelectric layer, the other electrode of the top electrode and the bottom electrode is positioned on the other side of the piezoelectric layer, and an electrode lead-out part of the one electrode covers the end face of the piezoelectric layer and extends to the other side of the piezoelectric layer so as to be positioned on the same side of the piezoelectric layer as the other electrode; the piezoelectric layer is of an anti-high platform structure. The invention also relates to an electronic device.

Description

Quartz resonator with anti-high piezoelectric layer structure, manufacturing method thereof and electronic device
Technical Field
Embodiments of the present invention relate to the field of semiconductors, and more particularly, to a quartz resonator with a piezoelectric layer having an anti-mesa structure, a method for manufacturing the same, and an electronic device.
Background
Existing wafer (quartz crystal wafer) fabrication mainly uses mechanical grinding to thin quartz and controls the film thickness of the wafer resonance region to control the frequency. And then, splitting the thinned quartz plate by utilizing linear cutting to obtain the bare wafer meeting the size requirement. And then, repeatedly frequency-modulating the bare wafer shot by means of wet etching, plasma treatment and the like to obtain a wafer meeting the frequency requirement (the method is hereinafter referred to as shot method).
Bulk solutions have been used for many years to fabricate lower fundamental, larger size wafers.
However, as the demand for high-fundamental, miniaturized wafers in the application market increases, the above conventional manufacturing schemes cannot cope with the demand, and major problems include: (1) The mechanical grinding thinning method is industrially difficult to obtain quartz plates for quartz resonators with high fundamental frequencies (40 MHz and above). Specifically, the high fundamental frequency corresponds to a thinner wafer thickness, and as the wafer is thinned to within 40 μm, chipping is likely to occur, the yield is greatly reduced, the higher the fundamental frequency of the quartz sheet is, the lower the yield is, and even success cannot be achieved. (2) The wire cutting method is difficult to obtain wafer shot with the size smaller than 1mm×1mm, and the cutting effect of the quartz sheet thinned to the thickness within 40 μm is poorer, and the yield is greatly reduced. These two factors make conventional solutions inadequate for high-baseband and miniaturized wafer fabrication requirements.
It is also desirable to optimize the boundary conditions of the resonators, reduce the lateral leakage of sound waves, and thereby further improve the performance of the resonators, based on the wafer level fabrication of individual resonators. However, it is difficult to optimize the boundary conditions of the resonator by the existing mechanical grinding and thinning method.
In addition, the electrode lead-out part of the top electrode and the electrode lead-out part of the bottom electrode of the existing quartz resonator are positioned on two sides of the piezoelectric layer, so that the technical problem that the resonator electrode and the package substrate or the package substrate lead-out electrode are not in the same plane during packaging is solved, and the electrical connection complexity is further improved.
Disclosure of Invention
The present invention has been made to alleviate or solve at least one of the above-mentioned problems of the prior art.
The invention provides a quartz wafer manufacturing process based on micro/nano electromechanical system (M/NEMS) photoetching technology, overcomes the challenges faced by the traditional shot method, can meet the wafer manufacturing requirements of high fundamental frequency and miniaturization, and has the characteristics of simple flow, good process compatibility, high yield and the like.
According to an aspect of an embodiment of the present invention, there is provided a quartz resonator including:
a bottom electrode;
a top electrode; and
a quartz piezoelectric layer arranged between the bottom electrode and the top electrode,
wherein:
one electrode of the top electrode and the bottom electrode is positioned on one side of the piezoelectric layer, the other electrode of the top electrode and the bottom electrode is positioned on the other side of the piezoelectric layer, and an electrode lead-out part of the one electrode covers the end face of the piezoelectric layer and extends to the other side of the piezoelectric layer so as to be positioned on the same side of the piezoelectric layer as the other electrode;
the piezoelectric layer is of an anti-high platform structure.
According to another aspect of an embodiment of the present invention, there is provided a method of manufacturing a quartz resonator, including the steps of:
forming quartz particles: forming quartz particles from a quartz wafer at least based on a micro/nano electromechanical system lithography technology, wherein the quartz particles are of an anti-high structure; and
forming an electrode layer: and forming a bottom electrode and a top electrode on two sides of the shot, wherein one electrode of the top electrode and the bottom electrode is positioned on one side of the shot, the other electrode of the top electrode and the bottom electrode is positioned on the other side of the shot, and an electrode lead-out part of the one electrode covers the end face of the shot and extends to the other side of the shot so as to be positioned on the same side of the shot as the other electrode.
The embodiment of the invention also relates to an electronic device, which comprises the quartz resonator.
Drawings
These and other features and advantages of the various embodiments of the disclosed invention will be better understood from the following description taken in conjunction with the accompanying drawings, in which like reference characters designate like parts throughout the several views, and wherein:
FIGS. 1-6 are schematic cross-sectional views of a process for fabricating a quartz resonator according to an exemplary embodiment of the invention;
FIGS. 7-12 are schematic cross-sectional views of a process for fabricating a quartz resonator according to another exemplary embodiment of the invention;
FIGS. 13-18 are schematic cross-sectional views of a process for fabricating a quartz resonator according to yet another exemplary embodiment of the invention;
fig. 19 is a schematic flow chart of fundamental frequency adjustment of shot.
Detailed Description
The technical scheme of the invention is further specifically described below through examples and with reference to the accompanying drawings. In the specification, the same or similar reference numerals denote the same or similar components. The following description of embodiments of the present invention with reference to the accompanying drawings is intended to illustrate the general inventive concept and should not be taken as limiting the invention. Some, but not all embodiments of the invention. All other embodiments, which are derived by a person skilled in the art based on the embodiments of the invention, fall within the scope of protection of the invention.
The invention relates to a micro/nano electromechanical system (M/NEMS) and quartz crystal oscillator manufacturing process, in particular to a novel quartz resonator manufacturing process combining a partial MEMS process and a traditional shot manufacturing process, which is used for manufacturing a high-precision and miniaturized quartz resonator. The method integrates the characteristics of high dimensional precision and convenient miniaturization of the MEMS manufacturing process, utilizes the processes of shot testing and frequency modulation, and has the advantages of simple flow, high efficiency, high yield and the like especially for manufacturing wafers with high fundamental frequency (more than 40 MHz).
The process of manufacturing a quartz resonator according to the present invention is exemplarily described below with reference to fig. 1 to 19. In the present invention, reference numerals are schematically illustrated as follows:
10: quartz wafer or piezoelectric layer.
12: a resonance region.
14: scribing through grooves or breaking through grooves.
16: and (3) dispersing granules.
18: and (5) a slot is etched in advance by the split.
20: a mask layer or mask.
22: and a mask groove.
30: the top electrode is made of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or a composite or alloy of the above metals.
40: the bottom electrode is made of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or a composite or alloy of the above metals.
42: the bottom electrode lead-out part is made of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or the composite or alloy of the above metals. In alternative embodiments, the top electrode and its electrode lead-out, the bottom electrode and its electrode lead-out may be the same metallic material.
In particular embodiments of the invention, the various parts are described with respect to one of the materials possible therein, but are not limited thereto.
Fig. 1-6 are schematic cross-sectional views of a process of fabricating a quartz resonator according to an exemplary embodiment of the invention. The process of manufacturing a quartz resonator is exemplarily described below with reference to fig. 1-6, which includes the steps of:
step 1: and manufacturing a mask. As shown in fig. 1, mask patterns are formed on both sides of a quartz wafer 10 by micro/nano electromechanical system lithography, wherein a portion of the quartz wafer corresponding to a resonance region 12 is exposed, and the rest of the quartz wafer is covered with a mask layer 20. Here, for subsequent use of wet etching (e.g., step 2 of the embodiment shown in fig. 1-6), the mask may be a metal mask, such as chrome gold (upper layer of gold, lower layer of chromium), or other inert metal; for subsequent use of dry etching (e.g., step 2 of the embodiment shown in fig. 1-6), the mask may be SU-8 glue, or other photoresist. The material of the mask 20 may also be suitable for other embodiments, and will not be described in detail.
It should be noted that in fig. 1-4, only a single shot corresponding region on the quartz wafer is shown, as can be appreciated that there are multiple regions on the quartz wafer 10 shown in fig. 1-4, the shot 16 shown in fig. 5 being formed from the multiple regions shown in fig. 1-4, respectively. In other embodiments, similar understanding should be made, and will not be repeated.
Step 2: and (5) wet etching. The resonance region 12 is thinned by wet etching to a design thickness value. The structure of the etched quartz wafer 10 is shown in fig. 2. Although not shown, step 2 may be replaced by dry etching, or a combination of wet etching and dry etching.
Step 3: mask 20 is removed. As shown in fig. 3, the mask 20 is removed layer by using an etching solution, and optionally, the quartz wafer from which the mask 20 is removed is cleaned.
Step 4: mechanical dicing. In one embodiment, the quartz wafer after step 3 may be attached to a flexible film (not shown), and the quartz wafer 10 is cut into discrete pieces by mechanical dicing, in fig. 4, dicing through grooves 14 are shown, and in fig. 4, discrete pieces 16 are located between the through grooves 14. And then disintegrated to obtain dispersed quartz granules 16 as shown later in fig. 5. The specific step of mechanical dicing is not limited herein, and any step is within the dicing step of the present invention as long as the dicing of the quartz wafer 10 into shot can be achieved. By mechanical dicing, a flat surface can be formed on the end surface of the shot.
Step 5: testing and frequency modulation. The shot (as shown in fig. 5) is frequency tested one by one and then wet etched according to the difference from the design frequency to change the thickness of the resonance region of the shot 16 to adjust the frequency. The test-etch step is repeated so many times to adjust the wafer frequency.
Step 6: an electrode is formed. As shown in fig. 6, a top electrode 30 and a bottom electrode 40 are plated on the shot 16 to form a quartz resonator. As shown in fig. 6, the shot 16 is disposed between the bottom electrode 40 and the top electrode 30, wherein: the bottom electrode is on the lower side of the shot 16, the top electrode is on the upper side of the shot 16, and the electrode lead-out portion 42 of the bottom electrode 40 covers the end face of the shot 16 and extends to the upper side of the shot 16 so as to be on the upper side of the shot 16 together with the top electrode 30. In an alternative embodiment, the bottom and top electrodes 40 and 30 and the electrode lead-out may be formed by sputtering or evaporation, more specifically, an additional mask (not shown) may be provided on the shot 16 shown in fig. 5 by a mechanical masking method, the additional mask having a pattern to expose regions corresponding to the bottom and top electrodes 40 and 30 and the electrode lead-out on the shot 16, then the bottom and top electrodes 40 and 30 and the electrode lead-out may be formed by sputtering or evaporation, and then the additional mask may be removed.
In the above embodiment, if the shot is of a double-sided inverted mesa structure, masks are provided on both sides of the quartz wafer, and the masks on both sides are patterned by micro/nano electromechanical system lithography; if the shot is of a single-sided anti-mesa structure, masks are arranged on two sides of the quartz wafer, and only one side of the masks is patterned by utilizing the micro/nano electromechanical system lithography technology.
1-6, the step of forming the quartz shot includes:
providing a mask 20 on both sides or one side of the quartz wafer 10, and patterning the mask using micro/nano electromechanical system lithography techniques to expose the resonance region 12 of the quartz wafer;
thinning the resonance region 12 by wet etching and/or dry etching;
removing the mask 20;
the masked quartz wafer is diced by mechanical dicing to obtain shot 16.
Fig. 7-12 are schematic cross-sectional views of a process of fabricating a quartz resonator according to another exemplary embodiment of the present invention, which differs from the embodiment shown in fig. 1-6 in that in this embodiment, the mechanical dicing step is performed after the mask step is fabricated and before wet etching, which has the advantage of improving the mechanical strength of the quartz wafer during dicing, contributing to an improved dicing yield and dicing yield of small-sized wafers. The following is an exemplary description of the fabrication process of a quartz resonator with reference to fig. 7-12, which includes the following specific steps:
step 1: and manufacturing a mask. As shown in fig. 7, mask patterns are formed on both sides of the quartz wafer 10 by micro/nano electromechanical system lithography, a portion of the quartz wafer corresponding to the resonance region 12 is exposed, and the rest of the quartz wafer is covered with the mask layer 20.
Step 2: mechanical dicing. In one embodiment, the quartz wafer after step 1 may be attached to a flexible film (not shown), and the quartz wafer 10 is cut into discrete particles by mechanical dicing, in fig. 8, dicing through grooves 14 are shown, and in fig. 8, preliminary discrete particles with masks 20 are located between the through grooves 14. Then, the dispersion is disintegrated, thereby obtaining dispersed preliminary shot with the mask 20 as shown in fig. 9 later. The specific step of mechanical dicing is not limited herein, and any step is within the dicing step of the present invention as long as the dicing of the quartz wafer 10 into shot can be achieved. By mechanical dicing, a flat surface can be formed on the end surface of the shot.
Step 3: and (5) wet etching. The resonance region 12 is thinned by wet etching to a design thickness value. The structure of the etched quartz wafer 10 is shown in fig. 10. Although not shown, step 3 may be replaced by dry etching, or a combination of wet etching and dry etching.
Step 4: mask 20 is removed. As shown in fig. 11, the mask 20 is removed layer by using an etching solution, and optionally, the shot particles after the mask 20 is removed are cleaned.
Step 5: testing and frequency modulation. The shot (as shown in fig. 11) is frequency tested one by one and then wet etched according to the difference from the design frequency to change the thickness of the resonance region of the shot 16 to adjust the frequency. The test-etch step is repeated so many times to adjust the wafer frequency.
Step 6: an electrode is formed. As shown in fig. 12, a top electrode 30 and a bottom electrode 40 are plated on the shot 16 to form a quartz resonator. As shown in fig. 12, the shot 16 is disposed between the bottom electrode 40 and the top electrode 30, wherein: the bottom electrode is on the lower side of the shot 16, the top electrode is on the upper side of the shot 16, and the electrode lead-out portion 42 of the bottom electrode 40 covers the end face of the shot 16 and extends to the upper side of the shot 16 so as to be on the upper side of the shot 16 together with the top electrode 30. In an alternative embodiment, the bottom and top electrodes 40 and 30 and the electrode lead-out portion are formed by sputtering or evaporation, and more specifically, a mask (not shown) may be provided on the shot 16 shown in fig. 11 by a mechanical masking method, the mask having a pattern to expose regions corresponding to the bottom and top electrodes 40 and 30 and the electrode lead-out portion on the shot 16, and then the bottom and top electrodes 40 and 30 and the electrode lead-out portion are formed by sputtering or evaporation, and then removed.
In the above embodiment, if the shot is of a double-sided inverted mesa structure, masks are provided on both sides of the quartz wafer, and the masks on both sides are patterned by micro/nano electromechanical system lithography; if the shot is of a single-sided anti-mesa structure, masks are arranged on two sides of the quartz wafer, and only one side of the masks is patterned by utilizing the micro/nano electromechanical system lithography technology.
Based on fig. 7-12, the step of forming the quartz shot includes:
providing a mask 20 on both sides or one side of the quartz wafer 10, and patterning the mask using micro/nano electromechanical system lithography techniques to expose the resonance region 12 of the quartz wafer;
cutting in a mechanical scribing manner in a mask region to obtain preliminary shot comprising a mask;
thinning the resonance area of the preliminary shot by wet etching and/or dry etching;
the mask over the thinned preliminary shot is removed to obtain the quartz shot 16.
Fig. 13-19 are schematic cross-sectional views of a process of fabricating a quartz resonator according to yet another exemplary embodiment of the invention. The following is an exemplary description of the fabrication process of a quartz resonator with reference to fig. 13-19, which includes the following specific steps:
step 1: and manufacturing a mask. As shown in fig. 13, mask patterns are formed on both sides of the quartz wafer 10 by micro/nano electro mechanical system lithography, a portion of the quartz wafer corresponding to the resonance region 12 is covered with a mask layer 20, and a mask groove 22 is provided in the mask layer 20.
Step 2: and (5) preliminary wet etching. In one embodiment, the quartz wafer 10 after step 1 may be subjected to preliminary etching, and as shown in fig. 14, a crack pre-etching groove 18 appears on the quartz wafer 10 at a position corresponding to the mask groove 22. At this time, the resonance region on the quartz wafer 10 is still covered by the mask 20. Although not shown, step 2 may be replaced by dry etching, or a combination of wet etching and dry etching.
Step 3: the mask is further patterned. In one embodiment, the mask on the quartz wafer 10 after step 2 may be further patterned using micro/nano-electromechanical system lithography to expose the region where the resonance region 12 is located, as shown in fig. 15.
Step 4: wet splitting. In one embodiment, the plurality of shot is formed by wet etching, with the split through slots 14 shown in fig. 16, and with preliminary shot with mask 20 between the through slots 14 in fig. 16, as shown in fig. 16. In step 4, the mask trench 22 is etched with an etching liquid to form the split through trench 14, and the resonance region 12 is thinned simultaneously with the formation of the split through trench 14. In a wet-splitting manner, the end faces of the resulting pellets include a chamfer at an angle other than 90 degrees to the top or bottom side of the pellets, as shown in fig. 16.
Step 5: mask 20 is removed. The mask 20 is removed layer by using an etching solution to obtain the shot 16 shown in fig. 17, and optionally, the shot after removing the mask 20 is cleaned.
Step 6: testing and frequency modulation. The shot (as shown in fig. 17) is frequency tested one by one and then wet etched according to the difference from the design frequency, changing the thickness of the resonance area of the shot 16, see fig. 18, to adjust the frequency. The test-etch step is repeated so many times to adjust the wafer frequency.
Step 7: an electrode is formed. Referring to fig. 12, a top electrode 30 and a bottom electrode 40 are plated on the shot 16 to form a quartz resonator. Referring to fig. 12, the shot 16 is disposed between the bottom electrode 40 and the top electrode 30, wherein: the bottom electrode is on the lower side of the shot 16, the top electrode is on the upper side of the shot 16, and the electrode lead-out portion 42 of the bottom electrode 40 covers the end face of the shot 16 and extends to the upper side of the shot 16 so as to be on the upper side of the shot 16 together with the top electrode 30. In an alternative embodiment, the bottom and top electrodes 40 and 30 and the electrode lead-out portion are formed by sputtering or evaporation, and more specifically, an additional mask (not shown) may be provided on the shot 16 shown in fig. 18 in a mechanical masking method, the additional mask having a pattern to expose regions corresponding to the bottom and top electrodes 40 and 30 and the electrode lead-out portion on the shot 16, and then the bottom and top electrodes 40 and 30 and the electrode lead-out portion are formed by sputtering or evaporation, and then removed.
Based on fig. 13-18, the step of forming the quartz shot includes:
providing masks 20 on both sides of the quartz wafer 10, and patterning the masks using micro/nano electromechanical system lithography to expose the shot separation region;
wet etching the shot separation region to form preliminary shot comprising a mask in a wet splitting manner;
thinning the resonance area of the preliminary shot by wet etching;
the mask 20 on the preliminary shot is removed to obtain the quartz shot 16.
In the above embodiments, for the frequency tuning step or the step of forming the final quartz shot, it may comprise:
frequency measurement: measuring the fundamental frequency of the resonance area of the quartz shot; and
thickness adjustment: the thickness of the resonance region of the quartz shot is adjusted based on the difference between the measured frequency and the design frequency.
Specifically, fig. 19 is a schematic flow chart of fundamental frequency adjustment of shot. As shown in fig. 19, for example, the shot made in fig. 1-5, to which the frequency needs to be measured, if the frequency of the resonance region of the shot meets the requirement, then go to the next step, for example, setting an electrode; if the frequency of the resonance area of the shot is not in accordance with the requirement, the thickness of the shot is thinned by wet etching until the measured thickness of the resonance area of the shot is in accordance with the requirement.
In the above-described embodiment, there is a frequency modulation step or a step of thinning shot, but this step may be omitted in the case where the thickness of the wafer used to manufacture the quartz resonator meets the fundamental frequency requirement. Accordingly, the step of forming the quartz shot comprises:
providing a mask on both sides or one side of the quartz wafer, patterning the mask by using micro/nano electromechanical system lithography technology, and forming quartz particles at least based on performing a wet etching process on the quartz wafer; or alternatively
A mask is disposed on one side of the quartz wafer, and the mask is patterned using micro/nano-electromechanical system lithography techniques, and a mechanical dicing process is performed on the quartz wafer to form quartz shot.
Based on the above, the present invention provides a method for manufacturing a quartz resonator, comprising the steps of:
forming quartz particles: forming quartz shot particles 16 from a quartz wafer 10 at least based on micro/nano electromechanical system lithography, wherein the quartz shot particles are of an anti-high structure; and
forming an electrode layer: and forming a bottom electrode and a top electrode on two sides of the shot, wherein one electrode of the top electrode and the bottom electrode is positioned on one side of the shot, the other electrode of the top electrode and the bottom electrode is positioned on the other side of the shot, and an electrode lead-out part of the one electrode covers the end face of the shot and extends to the other side of the shot so as to be positioned on the same side of the shot as the other electrode.
Based on the above, the present invention also proposes a quartz resonator comprising:
a bottom electrode 40;
a top electrode 30; and
a quartz piezoelectric layer 10, disposed between the bottom electrode and the top electrode,
wherein:
one electrode of the top electrode and the bottom electrode is positioned on one side of the piezoelectric layer, the other electrode of the top electrode and the bottom electrode is positioned on the other side of the piezoelectric layer, and an electrode lead-out part of the one electrode covers the end face of the piezoelectric layer and extends to the other side of the piezoelectric layer so as to be positioned on the same side of the piezoelectric layer as the other electrode;
the piezoelectric layer 10 has an anti-plateau structure.
In the embodiment of the invention, the micro/nano electromechanical system (M/NEMS) lithography technology is combined with wet etching/dry etching, so that the method can be used for: so that the size of the shot is less than 1mm by 1mm; and/or such that the thickness of the resonance region of the shot is less than 40 μm or the fundamental frequency of the resonator formed on the basis of the shot is above 40 MHz. Specifically, based on micro/nano electromechanical system lithography, a fine pattern for subsequent etching, which is convenient for forming a shot size smaller than 1mm×1mm, can be obtained, while based on wet etching/dry etching, a shot size smaller than 1mm×1mm can be obtained; based on wet etching/dry etching, a quartz piezoelectric layer thickness of less than 40 μm can be obtained instead of a mechanical mask.
In the embodiment of the invention, the lug boss can be arranged at the boundary of the resonance area of the piezoelectric layer through mask and wet etching/dry etching, which is beneficial to optimizing the boundary condition of the resonator and reducing the transverse leakage of sound waves, thereby further improving the performance of the resonator.
In the embodiment of the invention, the electrode lead-out part of the top electrode and the electrode lead-out part of the bottom electrode of the quartz resonator are positioned on the same side of the piezoelectric layer, which is beneficial to the electric connection between the resonator and the packaging substrate and further beneficial to packaging.
In the present invention, the resonance region refers to a region where the top electrode, the bottom electrode, the piezoelectric layer, and the cavity or the void overlap in the thickness direction of the piezoelectric layer in the formed quartz resonator. In the present invention, the resonance region of the quartz wafer corresponds to a region that needs to be formed as a resonance region of the resonator in the quartz wafer; the resonance region of the piezoelectric layer corresponds to a region in the piezoelectric layer that needs to be formed as a resonance region of the resonator; the resonance area of a shot corresponds to the area in the shot that needs to be formed as the resonance area of the resonator. In the present invention, the non-resonance region is a portion other than the resonance region, for example, for the non-resonance region of the piezoelectric layer, it refers to a region outside the resonance region of the piezoelectric layer in the horizontal direction or the lateral direction.
It should be noted that, in the present invention, each numerical range may be a median value of each numerical range, except that the end value is not explicitly indicated, and these are all within the protection scope of the present invention.
In one embodiment of the present invention, the above-mentioned quartz resonator may further include a package structure.
As can be appreciated by those skilled in the art, the quartz resonator according to the present invention may be used to form a quartz crystal oscillator chip or an electronic device comprising a quartz resonator. The electronic device may be an electronic component such as an oscillator, a communication device such as an intercom or a mobile phone, or a large-sized product such as an automobile to which a quartz resonator is applied.
Based on the above, the invention also provides an electronic device comprising the quartz resonator.
Although embodiments of the present invention have been shown and described, it would be appreciated by those skilled in the art that changes may be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the claims and their equivalents.

Claims (16)

1. A quartz resonator, comprising:
a bottom electrode;
a top electrode; and
a quartz piezoelectric layer arranged between the bottom electrode and the top electrode,
wherein:
one electrode of the top electrode and the bottom electrode is positioned on one side of the piezoelectric layer, the other electrode of the top electrode and the bottom electrode is positioned on the other side of the piezoelectric layer, and an electrode lead-out part of the one electrode covers the end face of the piezoelectric layer and extends to the other side of the piezoelectric layer so as to be positioned on the same side of the piezoelectric layer as the other electrode;
the piezoelectric layer is of an anti-high platform structure.
2. The resonator of claim 1, wherein:
the end face of the piezoelectric layer is at right angles to the one side of the piezoelectric layer.
3. The resonator of claim 1, wherein:
the end face of the piezoelectric layer includes a bevel that is at a non-90 angle to the one side of the piezoelectric layer.
4. The resonator of claim 1, wherein:
the piezoelectric layer is of a single-sided anti-high platform structure.
5. The resonator of claim 1, wherein:
the piezoelectric layer is of a double-sided anti-high platform structure.
6. The resonator of claim 1, further comprising:
and (5) packaging the structure.
7. The resonator according to any of claims 1-6, wherein:
the size of the piezoelectric layer is smaller than 1mm multiplied by 1mm; and/or
The thickness of the resonance region of the piezoelectric layer is less than 40 μm or the fundamental frequency of the resonator is above 40 MHz.
8. A method of manufacturing a quartz resonator, comprising the steps of:
forming quartz particles: forming quartz particles from a quartz wafer at least based on a micro/nano electromechanical system lithography technology, wherein the quartz particles are of an anti-high structure; and
forming an electrode layer: and forming a bottom electrode and a top electrode on two sides of the shot, wherein one electrode of the top electrode and the bottom electrode is positioned on one side of the shot, the other electrode of the top electrode and the bottom electrode is positioned on the other side of the shot, and an electrode lead-out part of the one electrode covers the end face of the shot and extends to the other side of the shot so as to be positioned on the same side of the shot as the other electrode.
9. The method of claim 8, wherein forming the electrode layer comprises:
the bottom electrode and the top electrode and the electrode lead-out portion are formed by sputtering or vapor deposition.
10. The method of claim 8, wherein forming the quartz shot comprises:
providing masks on two sides or one side of the quartz wafer, and patterning the masks by utilizing micro/nano electromechanical system lithography technology to expose the resonance region of the wafer;
thinning the resonance region by wet etching and/or dry etching;
removing the mask;
the quartz wafer from which the mask was removed was cut by mechanical dicing to obtain quartz shot.
11. The method of claim 8, wherein forming the quartz shot comprises:
providing masks on two sides or one side of the quartz wafer, and patterning the masks by utilizing micro/nano electromechanical system lithography technology to expose the resonance region of the wafer;
cutting in a mechanical scribing manner in a mask region to obtain preliminary shot comprising a mask;
thinning the resonance area of the preliminary shot by wet etching and/or dry etching;
and removing the mask on the thinned preliminary shot to obtain the quartz shot.
12. The method of claim 8, wherein forming the quartz shot comprises:
providing masks on two sides or one side of the quartz wafer, and patterning the masks by utilizing micro/nano electromechanical system lithography technology to expose the shot separation region;
wet etching the shot separation region to form preliminary shot comprising a mask in a wet cracking and/or dry cracking manner;
thinning the resonance area of the preliminary shot by wet etching;
and removing the mask on the thinned preliminary shot to obtain the quartz shot.
13. The method of any of claims 8-12, wherein the step of forming quartz shot further comprises:
frequency measurement: measuring the fundamental frequency of the resonance area of the quartz shot; and
thickness adjustment: the thickness of the resonance region of the quartz shot is adjusted in a wet etching manner based on the difference between the measured frequency and the design frequency.
14. The method of claim 8, wherein forming the quartz shot comprises:
providing a mask on both sides or one side of a quartz wafer, patterning the mask by micro/nano electromechanical system lithography, and forming quartz particles based at least on performing a wet etching process on the wafer; or alternatively
A mask is provided on one side of the quartz wafer, and the mask is patterned using micro/nano-electromechanical system lithography techniques, and the formation of the quartz shot is based at least on performing a mechanical dicing process on the wafer.
15. The method of claim 8, wherein forming the electrode layer comprises:
forming a mask on the shot by a mechanical masking method, wherein the mask is provided with a pattern so as to expose areas corresponding to the bottom electrode, the top electrode and the electrode lead-out part on the shot;
forming a bottom electrode, a top electrode and an electrode lead-out part in a sputtering or vapor deposition mode;
the mask over the shot is removed.
16. An electronic device comprising a quartz resonator according to any of claims 1-7.
CN202210959238.1A 2022-08-05 2022-08-05 Quartz resonator with anti-high piezoelectric layer structure, manufacturing method thereof and electronic device Pending CN117559947A (en)

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JP2001085970A (en) * 1999-09-10 2001-03-30 Toyo Commun Equip Co Ltd Resonator for high stable piezo-oscillator
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