CN106341095B - Method for preparing monocrystal nitride film on metal and bulk acoustic wave resonator - Google Patents
Method for preparing monocrystal nitride film on metal and bulk acoustic wave resonator Download PDFInfo
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 64
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 47
- 239000002184 metal Substances 0.000 title claims abstract description 47
- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000013078 crystal Substances 0.000 claims abstract description 58
- 238000005516 engineering process Methods 0.000 claims abstract description 23
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 11
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims abstract 4
- 230000006911 nucleation Effects 0.000 claims description 9
- 238000010899 nucleation Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 239000010408 film Substances 0.000 description 36
- 239000010409 thin film Substances 0.000 description 9
- 238000002360 preparation method Methods 0.000 description 4
- 238000011160 research Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000010295 mobile communication Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides a method for growing a high-quality single crystal nitride film on metal, which comprises the following steps: firstly preparing an AlN nucleating layer on metal by adopting a low-temperature magnetron sputtering technology, and then preparing a high-quality monocrystalline nitride film by adopting an MOCVD technology. In addition, a single crystal nitride bulk acoustic resonator structure is provided on the basis, compared with the conventional polycrystalline bulk acoustic resonator, the piezoelectric material of the resonator consists of two parts, including an AlN nucleating layer prepared by adopting a low-temperature magnetron sputtering technology and a high-quality single crystal nitride film prepared on the AlN nucleating layer by adopting an MOCVD technology. The AlN nucleating layer can cover the bottom metal electrode, so that the quality of the nitride film can be effectively improved, the problems and challenges encountered in preparing a high-quality single crystal nitride film are overcome, and a high-performance single crystal nitride bulk acoustic wave resonator is expected to be obtained.
Description
Technical Field
The invention relates to the research field of radio frequency MEMS devices, in particular to a single crystal acoustic wave device.
Background
The rapid development of the fourth generation mobile communication technology 4G makes the bulk acoustic wave filter a hot topic of research. Compared with the traditional ceramic filter, the bulk acoustic wave filter has the advantages of small volume, low insertion loss, strong out-of-band rejection capability, good power characteristics and the like, and has attracted high attention in academia and industry. With the coming of the fifth generation mobile communication technology (5G), higher requirements are put on the performance of the filter, including lower insertion loss, higher out-of-band rejection capability and larger bandwidth, and thus the development of a bulk acoustic wave resonator with higher performance is required. The piezoelectric materials used by the bulk acoustic wave filter in mass production at present are polycrystalline nitride films prepared by adopting a low-temperature magnetron sputtering technology, and the films have poor quality and high defect density. The reference (James b. shell, Jeffrey b. shell, Pinal Patel, Michael d. hodge, Rama Veturyand James r. shell, Single Crystal Aluminum Film Bulk acoustics resonators, RWS, pp.16-19, 2016) calculated the effect of the mass of the piezoelectric Film on the performance of the Bulk acoustic wave resonator and filter, and the calculations showed that the device figure of merit (product of effective electromechanical constant and quality factor) of the Single Crystal Nitride Bulk acoustic wave resonator was up to 40% higher than that of the conventional polycrystalline Nitride Bulk acoustic wave resonator. A large increase in resonator performance would greatly improve the performance of the filter.
The preparation process of the single crystal nitride bulk acoustic wave resonator is difficult, and the device performance reported at present is far less than expected. The main technical difficulty is that it is difficult to prepare high-quality single-crystal piezoelectric films on the bottom metal electrode based on the Metal Organic Chemical Vapor Deposition (MOCVD) technology. According to document 2(y.aota, s.tanifuji, h.oguma, s.kameda, h.nakase, t.takagi and k.tsubourhi, FBAR Characteristics with AlN Film Using MOCVD Method and Ru/Ta Electrode, IEEE Ultrasonics Symposium, pp.1425-1428, 2007) and document 3(Shoichi Tanifuji, Yuji Aota, Suguru Kameda, Tadashi Takagi and kazuoobbuchi, discovery of Millimeter Wave ar fbwith Very Thin Film Using Method, IEEE International ultrasounds Symposium nitride growing on MOCVD Film, high temperature metal growing with MOCVD reacting with high temperature about 1000 ℃ of MOCVD metal, high temperature growing of metal under MOCVD reaction; second, high temperature H in MOCVD growth2Annealing causes the surface of the metal to be rough, and it is difficult to produce a high-quality nitride single crystal thin film. Aiming at the problems, the method firstly grows an AlN nucleating layer on a metal electrode by a low-temperature magnetron sputtering technology and then grows a high-quality single crystal nitride film by an MOCVD technology. Wherein, because the existing bulk acoustic wave devices are mostly prepared by adopting the low-temperature magnetron sputtering technology, no technology exists for carrying out low-temperature magnetron sputtering on an AlN nucleating layer on metalAnd (5) problems are solved. In addition, in the field of LED research, when growing single Crystal nitride films on sapphire, AlN nucleation layers grown by low-temperature magnetron sputtering have been proven to be effective in improving the quality of single Crystal nitride films and improving the luminous efficiency of LED devices (c.h. chiu, y.w.lin, m.t.tsai, b.c.lin, z.y.li, p.m.tu, s.c. huang, Earl Hsu, w.y.uen d, w.i.lee c, h.c. kuo, Journal of Crystal Growth, vol.414, pp.258-262, 2015). When a high-quality nitride single crystal film is grown on metal by MOCVD, the AlN nucleating layer by low-temperature magnetron sputtering can cover and protect a metal electrode, the difficult problem of metal in the high-temperature MOCVD growth process is eliminated, and the quality of the nitride single crystal film grown by the subsequent MOCVD is expected to be greatly improved. Therefore, the invention provides an effective method for preparing a high-quality single crystal nitride film on metal, and provides a single crystal nitride bulk acoustic wave resonator on the basis of the method, and the high-performance single crystal bulk acoustic wave resonator is hopeful to be prepared.
Disclosure of Invention
Technical problem to be solved
In view of the above technical problems, the present invention provides a method for preparing a high quality single crystal nitride thin film on a metal to solve the problems and challenges encountered when growing a high quality single crystal nitride thin film on a metal by high temperature MOCVD. And on the basis, the piezoelectric layer of the single crystal nitride bulk acoustic resonator device is composed of an A1N nucleating layer prepared by low-temperature magnetron sputtering and a high-quality single crystal nitride film grown by an MOCVD technology.
(II) technical scheme
The invention provides a preparation method of a monocrystalline nitride film on metal, which comprises the following steps:
s1: growing a metal film on a substrate;
s2: preparing an AlN nucleating layer on the metal film by adopting a low-temperature magnetron sputtering technology;
s3: and preparing a high-quality single crystal nitride film on the AlN nucleating layer by adopting an MOCVD (metal organic chemical vapor deposition) technology.
On the other hand, the invention provides a single crystal nitride film bulk acoustic resonator structure, compared with a conventional bulk acoustic wave device based on polycrystalline nitride, the piezoelectric material of the single crystal acoustic resonator structure comprises two parts, namely an AlN nucleating layer and a single crystal nitride film, and the AlN nucleating layer and the single crystal nitride film are prepared by adopting the preparation method of the single crystal nitride film on metal.
(III) advantageous effects
In view of the technical problems, the invention provides a method for preparing a high-quality single crystal nitride film on metal, which comprises the steps of firstly growing an A1N nucleating layer on the metal by a low-temperature magnetron sputtering technology, and then growing the high-quality nitride film by an MOCVD technology, wherein the A1N nucleating layer can cover a protective metal electrode on one hand, and the problems that the surface of the metal is rough and is easy to react with ammonia gas during high-temperature MOCVD growth are solved; on the other hand, an ideal template is provided for the subsequent high-temperature MOCVD growth of high-quality single crystal nitride films. On the basis, the invention provides a single crystal nitride bulk acoustic wave resonator device structure, and the single crystal nitride bulk acoustic wave resonator with excellent performance is expected to be prepared.
Drawings
FIG. 1 is a flow chart of a method for preparing a high-quality single-crystal nitride film on a metal electrode according to the present invention;
FIG. 2 is a schematic cross-sectional view of the method of FIG. 1 after growing a bottom metal electrode on a substrate;
FIG. 3 is a schematic cross-sectional view of the process of FIG. 1 after forming an AlN nucleation layer on the bottom metal electrode;
FIG. 4 is a schematic cross-sectional view of the fabrication method of FIG. 1 after fabricating a single-crystal nitride film on the A1N nucleation layer;
fig. 5 is a schematic view of a single crystal nitride bulk acoustic wave resonator according to the present invention.
[ description of reference ]
200-single crystal nitride bulk acoustic wave resonator; 201-substrate material;
202-a metal thin film; 203-AlN nucleating layer;
204-single crystal nitride film; 205-an acoustically reflective structure;
206-bottom metal electrode; 207-top metal electrode.
Detailed Description
In order that the objects, technical solutions and advantages of the present invention will become more apparent, the present invention will be further described in detail with reference to the accompanying drawings in conjunction with the following specific embodiments.
It should be noted that in the drawings or description, the same drawing reference numerals are used for similar or identical parts. Implementations not depicted or described in the drawings are of a form known to those of ordinary skill in the art. Additionally, while exemplifications of parameters including particular values may be provided herein, it is to be understood that the parameters need not be exactly equal to the respective values, but may be approximated to the respective values within acceptable error margins or design constraints. Directional phrases used in the embodiments, such as "upper," "lower," "front," "rear," "left," "right," and the like, refer only to the orientation of the figure. Accordingly, the directional terminology used is intended to be in the nature of words of description rather than of limitation.
In one exemplary embodiment of the present invention, a flow chart of a method for preparing a high quality single crystal nitride thin film on a metal electrode is provided, as shown in fig. 1. The specific preparation process flow schematic diagram is shown in fig. 2-4, and comprises the following steps:
s1: as shown in fig. 2, a metal thin film 202 is grown on a substrate 201. The substrate material 201 may be various substrate materials such as silicon, sapphire, quartz, and silicon carbide. The metal thin film 202 may be made of various metal materials such as copper, gold, iron, aluminum, titanium, chromium, molybdenum, tantalum, and the like. The metal material 202 can be prepared by magnetron sputtering or electron beam evaporation.
S2: as shown in fig. 3, an AlN nucleation layer 203 is prepared on a metal film 202 by using a low-temperature magnetron sputtering technique, wherein the magnetron sputtering temperature is in a range from room temperature to 500 ℃. The AlN nucleation layer 203 has a thickness in the range of 1nm to 400 nm.
S3: as shown in fig. 4, a single-crystal nitride film 204 is prepared on the AlN nucleation layer 203 using MOCVD techniques. The single crystal nitride film 204 prepared by the MOCVD technology can be GaN, AlN or AlxGa1-xN (x is more than 0 and less than 1). The temperature range for growing the single crystal nitride film 204 is 700 deg.c-1500 deg.c, and the thickness range of the single crystal nitride film 204 is 50nm-2 microns.
In an exemplary embodiment of the present invention, a single crystal acoustic resonator structure 300 is provided, in which the piezoelectric material of the proposed single crystal acoustic resonator structure 200 comprises two parts, an AlN nucleation layer 203 and a single crystal nitride material 204, as compared to a conventional polycrystalline nitride based bulk acoustic wave device, and is fabricated by first fabricating an acoustically reflective structure 205 on a substrate material 201, as described in the previous embodiment; preparing a bottom metal electrode 206 on the acoustic reflection structure 205; preparing an AlN nucleating layer 203 on the bottom metal electrode 206 by adopting a low-temperature magnetron sputtering technology; preparing a high-quality single-crystal nitride film 204 on the AlN nucleation layer 203 by using the MOCVD technique, wherein the single-crystal nitride film 204 can be GaN, AlN or AlxGa1-xN (x is more than 0 and less than 1); a top metal electrode 207 is prepared on the single-crystal nitride thin film 204.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (5)
1. A method for preparing a monocrystalline nitride film on a metal, comprising:
s1: preparing an acoustic reflection structure on a substrate material; growing and preparing a metal film on the acoustic reflection structure to be used as a bottom metal electrode;
s2: preparing an AlN nucleating layer on the metal film, wherein the AlN nucleating layer is prepared by adopting a magnetron sputtering technology, and the temperature range of the magnetron sputtering technology is from room temperature to 500 ℃;
s3: preparing a single crystal nitride film on the AlN nucleating layer, wherein the single crystal nitride film is prepared by adopting an MOCVD technology, and the temperature for preparing the single crystal nitride film by adopting the MOCVD technology is 700-1500 ℃.
2. The method of claim 1, wherein the AlN nucleation layer has a thickness in the range of 1nm to 400 nm.
3. The method for preparing a mono-crystalline nitride film on a metal as claimed in claim 1, wherein the mono-crystalline nitride film is GaN, AlN or AlxGa1-xN(0＜x＜1)。
4. The method for preparing a single crystal nitride film on metal according to claim 1, wherein the thickness of the single crystal nitride film is in the range of 50nm to 2 μm.
5. A single crystal nitride film bulk acoustic resonator, a piezoelectric material AlN nucleating layer and a single crystal nitride film of which are prepared by the method for preparing a single crystal nitride film on metal according to any one of claims 1 to 4.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US10686425B2 (en) | 2017-06-30 | 2020-06-16 | Texas Instruments Incorporated | Bulk acoustic wave resonators having convex surfaces, and methods of forming the same |
| US10622966B2 (en) * | 2017-07-26 | 2020-04-14 | Texas Instruments Incorporated | Bulk acoustic wave resonators having a phononic crystal acoustic mirror |
| CN107634734A (en) * | 2017-09-27 | 2018-01-26 | 中国科学院半导体研究所 | SAW resonator, wave filter and preparation method thereof |
| CN109560784B (en) * | 2017-09-27 | 2021-09-24 | 中国科学院半导体研究所 | Lamb wave resonator and preparation method thereof |
| CN109560785B (en) * | 2017-09-27 | 2021-09-24 | 中国科学院半导体研究所 | Lamb wave resonator and preparation method thereof |
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