CN105680813A - Thin-film bulk acoustic resonator and manufacturing method thereof - Google Patents
Thin-film bulk acoustic resonator and manufacturing method thereof Download PDFInfo
- Publication number
- CN105680813A CN105680813A CN201610105128.3A CN201610105128A CN105680813A CN 105680813 A CN105680813 A CN 105680813A CN 201610105128 A CN201610105128 A CN 201610105128A CN 105680813 A CN105680813 A CN 105680813A
- Authority
- CN
- China
- Prior art keywords
- layer
- substrate
- sacrifice layer
- cavity
- bulk acoustic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- 239000010409 thin film Substances 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 238000000034 method Methods 0.000 claims abstract description 48
- 229910052751 metal Inorganic materials 0.000 claims abstract description 35
- 239000002184 metal Substances 0.000 claims abstract description 35
- 239000000463 material Substances 0.000 claims abstract description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 15
- 239000001301 oxygen Substances 0.000 claims abstract description 15
- 230000008569 process Effects 0.000 claims abstract description 14
- 239000010949 copper Substances 0.000 claims abstract description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052802 copper Inorganic materials 0.000 claims abstract description 11
- 238000005530 etching Methods 0.000 claims description 26
- 238000007789 sealing Methods 0.000 claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 238000002161 passivation Methods 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 239000004411 aluminium Substances 0.000 claims description 9
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- 239000004642 Polyimide Substances 0.000 claims description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 238000000227 grinding Methods 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims 2
- 230000007613 environmental effect Effects 0.000 abstract description 2
- 238000011049 filling Methods 0.000 abstract description 2
- 229910000838 Al alloy Inorganic materials 0.000 abstract 2
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 abstract 2
- 238000001020 plasma etching Methods 0.000 abstract 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 238000001259 photo etching Methods 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- 238000010897 surface acoustic wave method Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 239000007769 metal material Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000002305 electric material Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229960001866 silicon dioxide Drugs 0.000 description 4
- 229910017083 AlN Inorganic materials 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000010295 mobile communication Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910013292 LiNiO Inorganic materials 0.000 description 1
- 229910012463 LiTaO3 Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910018594 Si-Cu Inorganic materials 0.000 description 1
- 229910008465 Si—Cu Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- PSVBHJWAIYBPRO-UHFFFAOYSA-N lithium;niobium(5+);oxygen(2-) Chemical compound [Li+].[O-2].[O-2].[O-2].[Nb+5] PSVBHJWAIYBPRO-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention discloses a thin-film bulk acoustic resonator (FBAR); a cavity is formed in a substrate; a lower electrode, an upper electrode, and a piezoelectric layer positioned between the two electrodes are further arranged above the cavity; the cavity is obtained by firstly filling a sacrificial layer and then removing the sacrificial layer, and the sacrificial layer is made of a material which can be removed with an oxygen plasma etching process; and the lower electrode, the upper electrode and/or the electrode leading-out end adopt one or multiple of aluminum, copper or copper aluminum alloy. The invention further discloses a manufacturing method of the FBAR; the aluminum, the copper or the copper aluminum alloy are adopted as an interconnected metal to form the electrode leading-out end; and the oxygen plasma etching (O<2> Plasma) process is adopted to remove the sacrificial layer to form an air gap of the FBAR. According to the invention, the manufacturing cost is reduced, the reliability of the thin-film bulk acoustic resonator is improved, and the environmental friendliness is embodied.
Description
Technical field
The application relates to a kind of thin film bulk acoustic resonator (FBAR or TFBAR, Thin-filmbulkacousticresonator), particularly relates to a kind of air gap type FBAR.
Background technology
The current wave filter for mobile communication mainly contains surface acoustic wave (SAW, surfaceacousticwave also claim surface acoustic wave) wave filter and bulk acoustic wave (BAW, bulkacousticwave) wave filter. Surface Acoustic Wave Filter is mainly at the Lithium niobium trioxide (LiNiO of 4 inches and 6 inches3) or lithium tantalate (LiTaO3) wafer is produced, bulk accoustic wave filter is production on the Silicon Wafer of 6 inches and 8 inches mainly. Normally wafer size is more big, and the unicircuit that same wafer can be produced is more many, and cost is more low. The material cost of Surface Acoustic Wave Filter and bulk accoustic wave filter is substantially identical, but the overall manufacturing cost of bulk accoustic wave filter is far away higher than Surface Acoustic Wave Filter, and this is owing to structure and the manufacturing process of bulk accoustic wave filter are complicated. Surface Acoustic Wave Filter, owing to cost is low, manufacturing process is ripe, occupies the wave filter market of more than 60%.
Along with the development of 4G mobile communication technology, wireless communication frequency is more and more higher, and available frequency spectrum is more and more crowded, and the aspects such as the rolloff-factor of wave filter, insertion loss, Out-of-band rejection, power bearing ability have been had higher requirement. Surface Acoustic Wave Filter shows gradually and cannot meet these requirements. And bulk accoustic wave filter shows excellence in these, become the first-selection of 4G moving communicating field gradually. But it is fast-developing that the sky high cost of bulk accoustic wave filter hinders it.
FBAR is a kind of bulk acoustic wave device, is also a kind of MEMS (micro-electro-mechanicalsystems, MEMS (micro electro mechanical system)) device, is the elementary cell of constituting body acoustic wave filter. One group of FBAR adopts the mode level such as such as half trapezoidal (half-ladder), entirely trapezoidal (full-ladder), lattice (lattice), stacking (stack) to be linked togather with regard to constituting body acoustic wave filter. FBAR is also for making duplexer, microwave oscillator, sensor, power amplifier, low-noise amplifier etc. How to produce high-performance, the FBAR of low cost bulk accoustic wave filter further developed significance.
Current FBAR mainly contains three kinds of structure back-etching types, solid-state assembling type and air gap type according to different manufacturing process. Back-etching type FBAR makes yield rate low due to bad mechanical strength, cannot scale of mass production. Solid assembling type FBAR adopts Bragg reflecting layer as acoustic reflection layer, needs to prepare multilayer film on the one hand, and in each layer film stress control, difficulty is relatively big and technique cost is higher; The acoustic reflection effect of Bragg reflecting layer is not as air on the other hand, and Q value (quality factor) is lower than air gap type FBAR. The physical strength of air gap type FBAR better, Q value higher, manufacturing process moderate complexity and be widely used. This respect content has been introduced by University of Electronic Science and Technology 2007 master thesis " film bulk acoustic resonator structure analysis and emulation " (author: Wu Yong) at chapter 2 " principle of FBAR and structure ".
Referring to Fig. 1, this is a kind of traditional air gap type FBAR. Upwards there is respectively successively lower electrode 201, piezoelectricity layer 202 and top electrode 203 above substrate 100. Described substrate 100 can be the materials such as silicon, sapphire, gallium arsenide, gan, silicon carbide, quartz, glass. Described lower electrode 201 and top electrode 203 can be the metallic substance such as aluminium, copper, aluminum-copper alloy, aluminum silicon alloy, Al-Si-Cu alloy, gold, tungsten, titanium, titanium tungsten compound, molybdenum, platinum. Described piezoelectricity layer 202 can be the piezoelectric film material such as zinc oxide, PZT (Leadzirconatetitanate, Pb-based lanthanumdoped zirconate titanates), aluminium nitride. There is the air gap of cavity 104 as FBAR of the upper surface concave downward from substrate 100 between substrate 100 and lower electrode 201.
Referring to Fig. 2, the manufacture method of the traditional air gap type FBAR shown in Fig. 1 comprises the steps:
Step S101, the upper surface at substrate 100 etches cavity 104, such as, adopt photoetching and etching technics. Also there is the sacrifice layer release channel being etched out together at the edge of cavity 104.
Step S102, on the substrate 100 deposit one layer of sacrifice layer, fill full to cavity described in major general 104. Described sacrifice layer is such as silicon-dioxide, phosphorosilicate glass (PSG), boron-phosphorosilicate glass (BPSG) etc.
Step S103, adopts flatening process to be ground to by sacrifice layer and the upper surface flush of substrate 100. Described flatening process is such as cmp (CMP).
Step S104, first grows layer of metal on substrate 100 and sacrifice layer, then this layer of metal etch is become lower electrode 201, such as, adopt sputtering, photoetching and etching technics. Lower electrode 201 roughly covers the position of cavity 104.
Step S105, on substrate 100, sacrifice layer and lower electrode 201, first deposit one layer of piezo-electric material, is then etched into piezoelectricity layer 202 by this layer of piezo-electric material. Piezoelectricity layer 202 also roughly covers the position of cavity 104.
Step S106, first grows layer of metal on substrate 100, sacrifice layer, lower electrode 201 and piezoelectricity layer 202, then this layer of metal etch is become top electrode 203, such as, adopt deposit, photoetching and etching technics. Top electrode 203 also roughly covers the position of cavity 104.
Step S107, in etching top electrode 203, piezoelectricity layer 202, lower electrode 201 one or more layers thus expose the position of sacrifice layer release channel, then remove the sacrifice layer in cavity 104 by this sacrifice layer release channel, such as, adopt photoetching, etching, wet corrosion technique. Cavity 104 between substrate 100 and lower electrode 201 is just as the air gap of FBAR.
Traditional air gap type FBAR, when manufacturing, all adopts silicon-dioxide or analogous material to be used for cavity filling as sacrifice layer, with hydrofluoric acid (HF), the silicon-dioxide in cavity is removed formation air gap again after element manufacturing completes. Owing to most metals is had corrodibility by hydrofluoric acid, the metallic substance that therefore traditional air gap type FBAR must be interconnected between careful choice electrode and layer. Generally, air gap type FBAR can not adopt the aluminium (Al) of low cost, copper (Cu) as interconnected metal, all adopts the gold (Au) of high cost as interconnected metal, this considerably increases its material cost. Further, while adopting hydrofluoric acid to remove sacrifice layer, other structures of FBAR device also can be subject to hydrofluoric acid corrosion in various degree, causes the reliability of device to be deteriorated.
Summary of the invention
Technical problems to be solved in this application are to provide a kind of low cost, high reliability, free of contamination FBAR and corresponding manufacture method.
For solving the problems of the technologies described above, the thin film bulk acoustic resonator of the application has cavity above substrate, also has lower electrode, top electrode and be positioned at the piezoelectricity layer in the middle of both above cavity; Described cavity is first filled sacrifice layer and is removed sacrifice layer again and obtain, and sacrifice layer adopts the material can removed by oxygen plasma etch technique; Described lower electrode, top electrode and/or electrode leads to client adopt one or more of aluminium, copper or X alloy.
One of manufacture method of thin film bulk acoustic resonator of the application is: is formed on substrate and protrudes the sacrifice layer in substrate, or forms supporting layer and the sacrifice layer of upper surface flush on substrate; Then on substrate and sacrifice layer or on substrate and supporting layer and sacrifice layer, form lower electrode, piezoelectricity layer, top electrode respectively; Finally adopt aluminium, copper or X alloy to form electrode leads to client as interconnected metal, and adopt oxygen plasma etch technique to remove sacrifice layer and form the air gap of thin film bulk acoustic resonator.
The technique effect that the application obtains is: changes the electrode in thin film bulk acoustic resonator, electrode leads to client material into cheap metal by precious metal on the one hand, reduces manufacturing cost; On the other hand avoid hydrofluoric acid to the infringement of device, it is to increase the reliability of thin film bulk acoustic resonator; Another further aspect has given up the hydrofluoric acid liquid that environment has pollution, embodies environment friendly.
Accompanying drawing explanation
Fig. 1 is the structural representation of traditional air gap type FBAR.
Fig. 2 is the manufacture method schematic diagram of traditional air gap type FBAR.
Fig. 3 a to Fig. 3 i is each step schematic diagram of air gap type FBAR manufacture method embodiment one of the application.
Fig. 4 a to Fig. 4 d is the air gap type FBAR manufacture method embodiment two part steps schematic diagram of the application.
Fig. 5 a to Fig. 5 b is the air gap type FBAR manufacture method embodiment three part steps schematic diagram of the application.
The structural representation of the embodiment one of the air gap type FBAR of Fig. 3 i or the application.
Fig. 5 c is the structural representation of the embodiment two of the air gap type FBAR of the application.
Description of reference numerals in figure: 100 is substrate; 101 is supporting layer; 102 is silicon (silicon single crystal or polysilicon); 104 is cavity; 105 is sacrifice layer; 201 is lower electrode; 202 is piezoelectricity layer; 203 is top electrode; 207 is groove; 208 is sealing coat; 209 is passivation layer; 300 is interconnected metal.
Embodiment
The embodiment one of the FBAR manufacture method of the application comprises the steps:
Step S301, refers to Fig. 3 a, on the substrate 100 deposit one layer of supporting layer 101.Supporting layer 101 can be the insulating material such as silicon-dioxide, silicon nitride, silicon oxynitride.
Step S302, refers to Fig. 3 b, and etching supporting layer 101 forms cavity 104, such as, adopt photoetching and etching technics. Cavity 104 is also connected with the sacrifice layer release channel (not shown) being etched out together.
Step S303, refers to Fig. 3 c, deposit one layer of sacrifice layer 105 on substrate 100 and supporting layer 101, and cavity 104 and sacrifice layer release channel are filled full by described sacrifice layer 105. Sacrifice layer 105 such as adopts carbonate (BlackDiamond), photoresist material (Photoresist), the polyimide (Polyimide) etc. can by oxygen plasma etch (O2Plasma) the inorganic or organic materials that technique is removed.
Step S304, refers to Fig. 3 d, adopts flatening process to be ground to and the upper surface flush of supporting layer 101 by the upper surface of sacrifice layer 105. Described flatening process is such as cmp.
Step S305, refers to Fig. 3 e, first deposit one layer of sealing coat 208 on supporting layer 101 and sacrifice layer 105, and sealing coat 208 is such as the materials such as silicon oxide, silicon nitride, silicon oxynitride, aluminium nitride. Then on sealing coat 208, grow layer of metal, and this layer of metal etch is become lower electrode 201, such as, adopt sputtering, photoetching and etching technics. The position of lower electrode 201 and all complete covering cavity 104 of sealing coat 208, but expose the position of sacrifice layer release channel.
Can selection of land, it is possible to etch lower electrode 201 and sealing coat 208 simultaneously.
Can selection of land, when etching lower electrode 201 and sealing coat 208 simultaneously, also in lower electrode 201 and sealing coat 208, etch groove 207, such as, adopt photoetching and etching technics. The bottom of groove 207 is such as the upper surface of supporting layer 101, and groove 207 is staggeredly located out with cavity 104. Groove 207 is used for isolating FBAR and interconnected hard contact. Showing groove 207 in Fig. 3 e, not etching groove 207 in other embodiments is also possible.
Step S306, refers to Fig. 3 f, and on sealing coat 208 and lower electrode 201, first deposit one layer of piezo-electric material, is then etched into piezoelectricity layer 202 by this layer of piezo-electric material. Piezoelectricity layer 202 position that is complete or partly covering cavity 104, but expose sacrifice layer release channel and the leading-out end of lower electrode 201.
If etching the groove 207 for isolating in step S305, so a part for piezoelectricity layer 202 can be filled in this groove 207.
Step S307, refers to Fig. 3 g, first grows layer of metal on sealing coat 208, lower electrode 201 and piezoelectricity layer 202, then deposit one layer of passivation layer 209 on the metal level of sealing coat 208, lower electrode 201, piezoelectricity layer 202, new growth. Passivation layer 209 is such as the materials such as silicon oxide, silicon nitride, silicon oxynitride, aluminium nitride. Then passivation layer 209 is first etched, then the metal level of the new growth of etching becomes top electrode 203, such as, adopt photoetching and etching technics. Top electrode 203 partly or entirely covers the position of cavity 104, but exposes the position of sacrifice layer release channel. Passivation layer 209 covers top electrode 203 and the expose portion of lower electrode 201, but exposes the leading-out end of electrode.
If etching the groove 207 for isolating in step S305, so a part for a part for top electrode 203, passivation layer 209 can be filled in this groove 207.
Step S308, refers to Fig. 3 h, forms interconnected metal 300 at the leading-out end of lower electrode 201 and the leading-out end of top electrode 203.Such as first grow layer of metal thus form interconnected metal 300 in the position of electrode leads to client, then remove the metal of other positions. Lower electrode 201, top electrode 203, interconnected metal 300 adopt the metallic substance of the low costs such as aluminium, copper, X alloy, and the interconnection technology manufacture of respective metal. Preferably, interconnected metal 300 should remain on more than 3 μm with the minimum spacing of cavity 104.
If etching the groove 207 for isolating in step S305, so a part for the interconnected metal 300 that the leading-out end of top electrode 203 is formed can be filled in this groove 207. In Fig. 3 h, the interconnected metal 300 that groove 207 is used for being formed by the leading-out end of FBAR device and top electrode 203 is isolated, and this groove 207 also can omit. Similarly, also can form groove between the interconnected metal 300 formed at the leading-out end of FBAR device and lower electrode 201 to isolate.
Step S309, refers to Fig. 3 i, adopts oxygen plasma etch technique to remove the sacrifice layer 105 in cavity 104 by sacrifice layer release channel position, and cavity 104 just defines the air gap of FBAR. Preferably, the temperature of reaction of oxygen plasma etch is between 200 DEG C to 650 DEG C. If sacrifice layer release channel is covered by any film, this step is removed the film above sacrifice layer release channel in the lump and is exposed sacrifice layer release channel.
The air gap type FBAR structure that this embodiment one produces is as shown in figure 3i.
The embodiment two of the FBAR manufacture method of the application comprises the steps:
Step S401, refers to Fig. 4 a, on the substrate 100 deposit one layer of sacrifice layer 105. Sacrifice layer 105 such as adopt carbonate, photoresist material, polyimide etc. can with oxygen plasma etch technique remove inorganic or organic materials.
Step S402, refers to Fig. 4 b, etching sacrificial layer 105, and remaining sacrifice layer 105 comprises and prepares as the part of cavity 104 and the part as sacrifice layer release channel that is connected with cavity 104, such as, adopt photoetching and etching technics.
Step S403, refers to Fig. 4 c, deposit one layer of silicon 102 on substrate 100 and sacrifice layer 105. As adopted silicon substrate, then it is silicon single crystal 102 on substrate 100. It it is polysilicon 102 on sacrifice layer 105.
Step S404, refers to Fig. 4 d, adopts flatening process by the upper surface grinding of silicon layer 102 or to be etched to and the upper surface flush of sacrifice layer 105. Described flatening process is such as cmp. Described flatening process can also be selective etch, it is possible to be wet etching or dry etching, it is desired to the etch rate of polysilicon is greater than the etch rate to silicon single crystal.
The step S305 of follow-up employing embodiment one is to step S309. The air gap type FBAR structure that this embodiment two produces is also as shown in figure 3i.
The embodiment three of the FBAR manufacture method of the application comprises the steps:
Step S501, refers to Fig. 5 a, on the substrate 100 deposit one layer of sacrifice layer 105. Sacrifice layer 105 such as adopt carbonate, photoresist material, polyimide etc. can with oxygen plasma etch technique remove inorganic or organic materials.
Step S502, refers to Fig. 5 b, etching sacrificial layer 105, and remaining sacrifice layer 105 comprises and prepares as the part of cavity 104 and the part as sacrifice layer release channel that is connected with cavity 104, such as, adopt photoetching and etching technics.
The step S305 of follow-up employing embodiment one is to step S309.The air gap type FBAR structure that this embodiment three produces is as shown in Figure 5 c.
Compared with traditional FBAR manufacture method, three embodiments of the FBAR manufacture method that the application provides have the following advantages:
Its one, select the material that can be removed by oxygen plasma etch technique as sacrificial layer material, after FBAR has manufactured, adopt oxygen plasma etch technique removal sacrifice layer. Oxygen plasma etch technique is corrosion-free to common metal, the low cost metal such as aluminium, copper therefore can be adopted as metallic substance interconnected between the lower electrode of FBAR, top electrode and/or layer, greatly reduce material cost.
Its two, avoid adopt hydrofluoric acid liquid in a wet process etching process remove earth silicon material step, therefore avoid hydrofluoric acid and other structures of FBAR brought potential damage, improve the reliability of device to a certain extent.
Its three, hydrofluoric acid is a kind of chemicals that environment has pollution, avoid adopt hydrofluoric acid also help environment protection.
Referring to shown in Fig. 3 i, this is the embodiment one of the FBAR of the application. Upwards there is respectively successively supporting layer 101, sealing coat 208, lower electrode 201, piezoelectricity layer 202, top electrode 203 and passivation layer 209 above substrate 100. Having cavity 104 in the middle of supporting layer 101, the bottom of cavity 104 is such as the upper surface of substrate 100, and the top of cavity 104 is such as the lower surface of sealing coat 208. Sealing coat 208 adds the isolation between FBAR and substrate 100, it is possible to reduce the resistivity requirement of substrate 100, and prevents having electric leakage to occur between the electrode of FBAR, thus for the integrated offer of IC better basic. Sealing coat 208 is as the transition between FBAR and substrate 100, it is also possible to improves the consistence of device architecture growth, thus improves device performance and reliability. Can selection of land, sealing coat 208 also can omit. Sealing coat 208 and lower electrode 201 are all the surfaces intactly covering cavity 104. Piezoelectricity layer 202 and top electrode 203 are all the surfaces partly or entirely covering cavity 104. The metallic substance of the low costs such as aluminium, copper, X alloy is adopted to be formed with interconnected metal 300 at the leading-out end of lower electrode 201 and top electrode 203. Passivation layer 209 is complete covers lower electrode 201 and top electrode 203 expose portion except the region that interconnected metal 300 covers, the expose portion avoiding top electrode 203 and lower electrode 201 is in atmosphere exposed and causes oxidation, the phenomenon such as rotten, be conducive to keeping the performance long time stability of FBAR. This makes device can be applied in comparatively severe environment, reduces the requirement to environment for use. Can selection of land, passivation layer 209 also can omit.
Referring to Fig. 5 c, this is the embodiment two of the FBAR of the application. Upwards there is respectively successively sealing coat 208, lower electrode 201, piezoelectricity layer 202, top electrode 203 and passivation layer 209 above substrate 100. A part for sealing coat 208 raises up, and sealing coat 208 raises up and has cavity 104 between part and substrate 100, and the bottom of cavity 104 is such as the upper surface of substrate 100, and the top of cavity 104 is such as the lower surface of sealing coat 208. Other structures and the embodiment one of this embodiment two are similar.
The key distinction of two embodiments of above-mentioned FBAR is whether to have on substrate 100 supporting layer 101. When there is supporting layer 101 on substrate 100, supporting layer 101 can with the upper surface flush of sacrifice layer 105, thus for lower electrode 201, piezoelectricity layer 202 and top electrode 203 provide a smooth surface carry out growth deposit, this can reduce the technology difficulty of film growth, is conducive to improving quality and the homogeneity of film.
Can selection of land, in two embodiments of above-mentioned FBAR, between the interconnected metal 300 formed at the leading-out end of lower electrode 201 and cavity 104, groove can be set, be used for FBAR and lower electrode hard contact 300 are carried out electric isolation. Between the interconnected metal 300 formed at the leading-out end of top electrode 203 and cavity 104, groove can also be set, it is used for FBAR and upper electrode metal contact 300 are carried out electric isolation. Fig. 3 i and Fig. 5 c show but a groove 207 exemplarily. When there is isolated groove, a part for a part for lower electrode 201, a part for piezoelectricity layer 202, top electrode 203, a part for passivation layer 209, a part with the interconnected metal 300 in side all can drop in this isolated groove.
Compared with traditional FBAR, the air gap type FBAR that the application provides structurally has the film that sealing coat, passivation layer, isolated groove etc. can improve device reliability, the Technology of low cost, corrosion-free, environmental protection is adopted, it is achieved that the double goal of low cost and high reliability on manufacturing.
These are only the preferred embodiment of the application, and it is not used in restriction the application. For a person skilled in the art, the application can have various modifications and variations. Within all spirit in the application and principle, any amendment of doing, equivalent replacement, improvement etc., all should be included within the protection domain of the application.
Claims (10)
1. a thin film bulk acoustic resonator, has cavity above substrate, also has lower electrode, top electrode and be positioned at the piezoelectricity layer in the middle of both above cavity; It is characterized in that: described cavity is first filled sacrifice layer and removed sacrifice layer again and obtain, and sacrifice layer adopts the material can removed by oxygen plasma etch technique; Described lower electrode, top electrode and/or electrode leads to client adopt one or more of aluminium, copper or X alloy.
2. thin film bulk acoustic resonator according to claim 1, is characterized in that, described sacrifice layer adopts one or more materials of carbonate, photoresist material, polyimide.
3. thin film bulk acoustic resonator according to claim 1, is characterized in that, in substrate and have sealing coat under lower electrode, described cavity is between substrate and sealing coat;
Or, in substrate and have supporting layer and sealing coat under lower electrode, described cavity is in supporting layer and between substrate and sealing coat.
4. thin film bulk acoustic resonator according to claim 1, is characterized in that, has passivation layer on top electrode, covers all expose portions of top electrode and lower electrode.
5. a manufacture method for thin film bulk acoustic resonator, is characterized in that, is formed and protrudes the sacrifice layer in substrate, or form supporting layer and the sacrifice layer of upper surface flush on substrate on substrate; Then on substrate and sacrifice layer or on substrate and supporting layer and sacrifice layer, form lower electrode, piezoelectricity layer, top electrode respectively; Finally adopt aluminium, copper or X alloy to form electrode leads to client as interconnected metal, and adopt oxygen plasma etch technique to remove sacrifice layer and form the air gap of thin film bulk acoustic resonator.
6. the manufacture method of thin film bulk acoustic resonator according to claim 5, is characterized in that, the described sacrifice layer protruded in substrate that formed on substrate comprises the steps: deposit one layer of sacrifice layer on substrate; Etching sacrificial layer, remaining sacrifice layer comprises the part of preparation as cavity.
7. the manufacture method of thin film bulk acoustic resonator according to claim 5, is characterized in that, described on substrate, form upper surface flush supporting layer and sacrifice layer comprise the steps: deposit one layer of supporting layer on substrate; Etching supporting layer forms cavity; Deposit one layer of sacrifice layer on substrate and supporting layer, cavity is filled full by described sacrifice layer; Adopt flatening process that the upper surface of sacrifice layer is ground to the upper surface flush with supporting layer.
8. the manufacture method of thin film bulk acoustic resonator according to claim 5, is characterized in that, described on substrate, form upper surface flush supporting layer and sacrifice layer comprise the steps: deposit one layer of sacrifice layer on substrate; Etching sacrificial layer, remaining sacrifice layer comprises the part of preparation as cavity; Deposit one layer of supporting layer on substrate and sacrifice layer; Flatening process is adopted by the upper surface grinding of supporting layer or to be etched to the upper surface flush with sacrifice layer.
9. the manufacture method of thin film bulk acoustic resonator according to claim 8, is characterized in that, described flatening process is cmp or selective etch, and the etch rate of polysilicon is greater than the etch rate to silicon single crystal by selective etch.
10. the manufacture method of thin film bulk acoustic resonator according to claim 5, is characterized in that, the temperature of reaction of oxygen plasma etch technique is between 200 DEG C to 650 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610105128.3A CN105680813B (en) | 2016-02-25 | 2016-02-25 | A kind of thin film bulk acoustic wave resonator and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610105128.3A CN105680813B (en) | 2016-02-25 | 2016-02-25 | A kind of thin film bulk acoustic wave resonator and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105680813A true CN105680813A (en) | 2016-06-15 |
| CN105680813B CN105680813B (en) | 2018-12-07 |
Family
ID=56305069
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610105128.3A Active CN105680813B (en) | 2016-02-25 | 2016-02-25 | A kind of thin film bulk acoustic wave resonator and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105680813B (en) |
Cited By (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106130498A (en) * | 2016-06-28 | 2016-11-16 | 河海大学常州校区 | FBAR resonator and preparation method thereof |
| CN106961258A (en) * | 2017-05-04 | 2017-07-18 | 杭州左蓝微电子技术有限公司 | A kind of cavity type SAW resonator and its processing method |
| CN107196618A (en) * | 2017-02-16 | 2017-09-22 | 杭州左蓝微电子技术有限公司 | FBAR and preparation method thereof |
| CN108123695A (en) * | 2016-11-30 | 2018-06-05 | 三星电机株式会社 | Bulk acoustic wave resonator |
| CN108363950A (en) * | 2018-01-08 | 2018-08-03 | 杭州士兰微电子股份有限公司 | Ultrasonic fingerprint sensor and its manufacturing method |
| CN109412549A (en) * | 2017-08-17 | 2019-03-01 | 三星电机株式会社 | Bulk acoustic wave resonator |
| CN109945966A (en) * | 2019-03-29 | 2019-06-28 | 中北大学 | The single electrode hydrophone of AlN bilayer film |
| CN110289825A (en) * | 2019-07-29 | 2019-09-27 | 贵州中科汉天下微电子有限公司 | A kind of thin film bulk acoustic wave resonator and its manufacturing method, filter and duplexer |
| CN110289824A (en) * | 2019-05-22 | 2019-09-27 | 杭州左蓝微电子技术有限公司 | Thin film bulk acoustic wave resonator and preparation method thereof |
| CN110635776A (en) * | 2019-09-10 | 2019-12-31 | 北京汉天下微电子有限公司 | Resonator and method for manufacturing the same |
| CN111010109A (en) * | 2019-03-02 | 2020-04-14 | 天津大学 | Packaging of MEMS devices with release holes located outside of the packaging space |
| CN111010104A (en) * | 2019-09-02 | 2020-04-14 | 天津大学 | Bulk acoustic wave resonator having piezoelectric layer with insertion structure, filter, and electronic apparatus |
| CN111030634A (en) * | 2019-12-31 | 2020-04-17 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator with electrical isolation layer, method of manufacturing the same, filter, and electronic apparatus |
| CN111049490A (en) * | 2019-12-31 | 2020-04-21 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator with electrical isolation layer, method of manufacturing the same, filter, and electronic apparatus |
| WO2020124662A1 (en) * | 2018-12-20 | 2020-06-25 | 中国电子科技集团公司第十三研究所 | Method for fabricating resonator |
| WO2020163973A1 (en) * | 2019-02-15 | 2020-08-20 | 天津大学 | Air-gap type piezoelectric bulk acoustic wave device heterogeneous integration method, and device thereof |
| WO2020199511A1 (en) * | 2019-04-04 | 2020-10-08 | 中芯集成电路（宁波）有限公司上海分公司 | Bulk acoustic resonator and manufacturing method therefor, filter, and radio frequency communication system |
| WO2020199507A1 (en) * | 2019-04-04 | 2020-10-08 | 中芯集成电路（宁波）有限公司上海分公司 | Bulk acoustic wave resonator and manufacturing method therefor, filter, and radio frequency communication system |
| CN111786652A (en) * | 2019-04-04 | 2020-10-16 | 中芯集成电路（宁波）有限公司上海分公司 | Bulk acoustic wave resonator, method of manufacturing the same, filter, and radio frequency communication system |
| CN111988006A (en) * | 2020-08-18 | 2020-11-24 | 武汉衍熙微器件有限公司 | Film bulk acoustic resonator and manufacturing method thereof |
| WO2020244254A1 (en) * | 2019-06-04 | 2020-12-10 | 天津大学 | Resonator with gap of step structure being partially filled, and filter and electronic device |
| CN112073025A (en) * | 2020-09-23 | 2020-12-11 | 浙江大学 | Self-supporting air gap type bulk acoustic wave resonator based on porous silicon and preparation method thereof |
| CN112087209A (en) * | 2020-09-27 | 2020-12-15 | 苏州汉天下电子有限公司 | Method for manufacturing resonator |
| CN112087217A (en) * | 2020-09-27 | 2020-12-15 | 苏州汉天下电子有限公司 | Manufacturing method of FBAR resonator with improved Q value |
| CN112117986A (en) * | 2020-09-27 | 2020-12-22 | 苏州汉天下电子有限公司 | Method for manufacturing resonator |
| CN112151511A (en) * | 2020-08-17 | 2020-12-29 | 中国科学院微电子研究所 | Semiconductor structure and preparation method thereof |
| CN112290901A (en) * | 2020-09-04 | 2021-01-29 | 浙江大学杭州国际科创中心 | Cavity type film bulk acoustic resonator packaging structure and preparation method thereof |
| CN113114157A (en) * | 2021-04-16 | 2021-07-13 | 中芯集成电路制造(绍兴)有限公司 | Bulk acoustic wave filter and method of forming the same |
| CN113497594A (en) * | 2020-04-08 | 2021-10-12 | 诺思(天津)微系统有限责任公司 | Single crystal bulk acoustic wave resonator, method for manufacturing the same, filter, and electronic device |
| WO2022057766A1 (en) * | 2020-09-21 | 2022-03-24 | 中芯集成电路（宁波）有限公司上海分公司 | Method for manufacturing film bulk acoustic resonator, and filter |
| WO2022057765A1 (en) * | 2020-09-21 | 2022-03-24 | 中芯集成电路（宁波）有限公司上海分公司 | Method for manufacturing film bulk acoustic resonator, and filter |
| WO2022063053A1 (en) * | 2020-09-27 | 2022-03-31 | 苏州汉天下电子有限公司 | Resonator manufacturing method and resonator |
| US11482664B2 (en) * | 2020-04-23 | 2022-10-25 | Aac Acoustic Technologies (Shenzhen) Co., Ltd. | Planarization method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030193269A1 (en) * | 2002-04-11 | 2003-10-16 | Samsung Electro-Mechanics Co., Ltd. | Film bulk acoustic resonator and method of forming the same |
| CN102025340A (en) * | 2010-10-21 | 2011-04-20 | 张�浩 | Sonic wave resonator and processing method thereof |
| CN105262455A (en) * | 2015-10-09 | 2016-01-20 | 锐迪科微电子（上海）有限公司 | High-reliability FBAR (thin-film bulk acoustic resonator) and manufacturing method thereof |
-
2016
- 2016-02-25 CN CN201610105128.3A patent/CN105680813B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030193269A1 (en) * | 2002-04-11 | 2003-10-16 | Samsung Electro-Mechanics Co., Ltd. | Film bulk acoustic resonator and method of forming the same |
| CN1450719A (en) * | 2002-04-11 | 2003-10-22 | 三星电机株式会社 | Film bulk acoustic resonator and method of forming the same |
| CN102025340A (en) * | 2010-10-21 | 2011-04-20 | 张�浩 | Sonic wave resonator and processing method thereof |
| CN105262455A (en) * | 2015-10-09 | 2016-01-20 | 锐迪科微电子（上海）有限公司 | High-reliability FBAR (thin-film bulk acoustic resonator) and manufacturing method thereof |
Cited By (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106130498A (en) * | 2016-06-28 | 2016-11-16 | 河海大学常州校区 | FBAR resonator and preparation method thereof |
| CN108123695A (en) * | 2016-11-30 | 2018-06-05 | 三星电机株式会社 | Bulk acoustic wave resonator |
| CN107196618A (en) * | 2017-02-16 | 2017-09-22 | 杭州左蓝微电子技术有限公司 | FBAR and preparation method thereof |
| CN106961258B (en) * | 2017-05-04 | 2023-08-15 | 杭州左蓝微电子技术有限公司 | Cavity type surface acoustic wave resonator and processing method thereof |
| CN106961258A (en) * | 2017-05-04 | 2017-07-18 | 杭州左蓝微电子技术有限公司 | A kind of cavity type SAW resonator and its processing method |
| CN109412549A (en) * | 2017-08-17 | 2019-03-01 | 三星电机株式会社 | Bulk acoustic wave resonator |
| CN109412549B (en) * | 2017-08-17 | 2022-06-07 | 三星电机株式会社 | Bulk acoustic wave resonator |
| CN108363950A (en) * | 2018-01-08 | 2018-08-03 | 杭州士兰微电子股份有限公司 | Ultrasonic fingerprint sensor and its manufacturing method |
| US11984864B2 (en) | 2018-12-20 | 2024-05-14 | The 13Th Research Institute Of China Electronics Technology Group Corporation | Method for manufacturing resonator |
| WO2020124662A1 (en) * | 2018-12-20 | 2020-06-25 | 中国电子科技集团公司第十三研究所 | Method for fabricating resonator |
| WO2020163973A1 (en) * | 2019-02-15 | 2020-08-20 | 天津大学 | Air-gap type piezoelectric bulk acoustic wave device heterogeneous integration method, and device thereof |
| CN111010109B (en) * | 2019-03-02 | 2024-01-26 | 天津大学 | Encapsulation of MEMS device with release hole outside encapsulation space |
| CN111010109A (en) * | 2019-03-02 | 2020-04-14 | 天津大学 | Packaging of MEMS devices with release holes located outside of the packaging space |
| CN109945966A (en) * | 2019-03-29 | 2019-06-28 | 中北大学 | The single electrode hydrophone of AlN bilayer film |
| CN111786652A (en) * | 2019-04-04 | 2020-10-16 | 中芯集成电路（宁波）有限公司上海分公司 | Bulk acoustic wave resonator, method of manufacturing the same, filter, and radio frequency communication system |
| CN111786652B (en) * | 2019-04-04 | 2022-05-10 | 中芯集成电路（宁波）有限公司上海分公司 | Bulk acoustic wave resonator, method of manufacturing the same, filter, and radio frequency communication system |
| WO2020199511A1 (en) * | 2019-04-04 | 2020-10-08 | 中芯集成电路（宁波）有限公司上海分公司 | Bulk acoustic resonator and manufacturing method therefor, filter, and radio frequency communication system |
| WO2020199507A1 (en) * | 2019-04-04 | 2020-10-08 | 中芯集成电路（宁波）有限公司上海分公司 | Bulk acoustic wave resonator and manufacturing method therefor, filter, and radio frequency communication system |
| CN110289824A (en) * | 2019-05-22 | 2019-09-27 | 杭州左蓝微电子技术有限公司 | Thin film bulk acoustic wave resonator and preparation method thereof |
| WO2020244254A1 (en) * | 2019-06-04 | 2020-12-10 | 天津大学 | Resonator with gap of step structure being partially filled, and filter and electronic device |
| CN110289825B (en) * | 2019-07-29 | 2024-03-12 | 苏州汉天下电子有限公司 | Thin film bulk acoustic resonator, manufacturing method thereof, filter and duplexer |
| CN110289825A (en) * | 2019-07-29 | 2019-09-27 | 贵州中科汉天下微电子有限公司 | A kind of thin film bulk acoustic wave resonator and its manufacturing method, filter and duplexer |
| CN111010104A (en) * | 2019-09-02 | 2020-04-14 | 天津大学 | Bulk acoustic wave resonator having piezoelectric layer with insertion structure, filter, and electronic apparatus |
| CN110635776B (en) * | 2019-09-10 | 2023-02-24 | 苏州汉天下电子有限公司 | Resonator and method of manufacturing the same |
| CN110635776A (en) * | 2019-09-10 | 2019-12-31 | 北京汉天下微电子有限公司 | Resonator and method for manufacturing the same |
| CN111049490B (en) * | 2019-12-31 | 2020-09-15 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator with electrical isolation layer, method of manufacturing the same, filter, and electronic apparatus |
| CN111049490A (en) * | 2019-12-31 | 2020-04-21 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator with electrical isolation layer, method of manufacturing the same, filter, and electronic apparatus |
| CN111030634A (en) * | 2019-12-31 | 2020-04-17 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator with electrical isolation layer, method of manufacturing the same, filter, and electronic apparatus |
| WO2021135022A1 (en) * | 2019-12-31 | 2021-07-08 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator having electrical isolation layer and manufacturing method therefor, filter, and electronic device |
| CN113497594B (en) * | 2020-04-08 | 2023-10-24 | 诺思(天津)微系统有限责任公司 | Single crystal acoustic resonator, method of manufacturing the same, filter, and electronic apparatus |
| CN113497594A (en) * | 2020-04-08 | 2021-10-12 | 诺思(天津)微系统有限责任公司 | Single crystal bulk acoustic wave resonator, method for manufacturing the same, filter, and electronic device |
| US11482664B2 (en) * | 2020-04-23 | 2022-10-25 | Aac Acoustic Technologies (Shenzhen) Co., Ltd. | Planarization method |
| CN112151511A (en) * | 2020-08-17 | 2020-12-29 | 中国科学院微电子研究所 | Semiconductor structure and preparation method thereof |
| CN111988006A (en) * | 2020-08-18 | 2020-11-24 | 武汉衍熙微器件有限公司 | Film bulk acoustic resonator and manufacturing method thereof |
| CN112290901B (en) * | 2020-09-04 | 2024-04-26 | 浙江大学杭州国际科创中心 | Cavity type film bulk acoustic resonator packaging structure and preparation method thereof |
| CN112290901A (en) * | 2020-09-04 | 2021-01-29 | 浙江大学杭州国际科创中心 | Cavity type film bulk acoustic resonator packaging structure and preparation method thereof |
| WO2022057765A1 (en) * | 2020-09-21 | 2022-03-24 | 中芯集成电路（宁波）有限公司上海分公司 | Method for manufacturing film bulk acoustic resonator, and filter |
| WO2022057766A1 (en) * | 2020-09-21 | 2022-03-24 | 中芯集成电路（宁波）有限公司上海分公司 | Method for manufacturing film bulk acoustic resonator, and filter |
| CN112073025A (en) * | 2020-09-23 | 2020-12-11 | 浙江大学 | Self-supporting air gap type bulk acoustic wave resonator based on porous silicon and preparation method thereof |
| CN112073025B (en) * | 2020-09-23 | 2024-02-02 | 浙江大学 | Self-supporting air gap type bulk acoustic wave resonator based on porous silicon and preparation method thereof |
| CN112087217A (en) * | 2020-09-27 | 2020-12-15 | 苏州汉天下电子有限公司 | Manufacturing method of FBAR resonator with improved Q value |
| CN112087209A (en) * | 2020-09-27 | 2020-12-15 | 苏州汉天下电子有限公司 | Method for manufacturing resonator |
| CN112087209B (en) * | 2020-09-27 | 2024-02-23 | 苏州汉天下电子有限公司 | Resonator manufacturing method |
| CN112087217B (en) * | 2020-09-27 | 2024-02-23 | 苏州汉天下电子有限公司 | Manufacturing method of FBAR resonator with improved Q value |
| CN112117986A (en) * | 2020-09-27 | 2020-12-22 | 苏州汉天下电子有限公司 | Method for manufacturing resonator |
| CN112117986B (en) * | 2020-09-27 | 2024-03-12 | 苏州汉天下电子有限公司 | Resonator manufacturing method |
| WO2022063053A1 (en) * | 2020-09-27 | 2022-03-31 | 苏州汉天下电子有限公司 | Resonator manufacturing method and resonator |
| CN113114157A (en) * | 2021-04-16 | 2021-07-13 | 中芯集成电路制造(绍兴)有限公司 | Bulk acoustic wave filter and method of forming the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105680813B (en) | 2018-12-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105680813A (en) | Thin-film bulk acoustic resonator and manufacturing method thereof | |
| US10911021B2 (en) | Transversely-excited film bulk acoustic resonator with lateral etch stop | |
| US11171629B2 (en) | Transversely-excited film bulk acoustic resonator using pre-formed cavities | |
| CN109660227B (en) | Film bulk acoustic wave filter and packaging method thereof | |
| CN109831172B (en) | Method for preparing bulk acoustic wave resonator | |
| US11595017B2 (en) | High Q acoustic resonator with dielectric flaps | |
| CN110719082B (en) | Acoustic wave resonator package | |
| JP7081041B2 (en) | Thin-film bulk acoustic wave resonators and their manufacturing methods, filters, and radio frequency communication systems | |
| CN105262456A (en) | High-performance FBAR (thin-film bulk acoustic resonator) and manufacturing method thereof | |
| CN105262455A (en) | High-reliability FBAR (thin-film bulk acoustic resonator) and manufacturing method thereof | |
| CN111049490B (en) | Bulk acoustic wave resonator with electrical isolation layer, method of manufacturing the same, filter, and electronic apparatus | |
| JPWO2005060091A1 (en) | Method for manufacturing piezoelectric thin film device and piezoelectric thin film device | |
| JP2021536158A (en) | Thin-film bulk acoustic wave resonator and its manufacturing method | |
| US20230034595A1 (en) | Patterned cavity walls for transversely-excited film bulk acoustic resonator frontside membrane release | |
| CN111030634B (en) | Bulk acoustic wave resonator with electrical isolation layer, method of manufacturing the same, filter, and electronic apparatus | |
| JP4395892B2 (en) | Piezoelectric thin film device and manufacturing method thereof | |
| CN113572446A (en) | Method for manufacturing bulk acoustic wave resonator, bulk acoustic wave resonator and filter | |
| CN105811914A (en) | Bulk acoustic wave device, integrated structure and manufacturing method | |
| US20230041856A1 (en) | Transversely-excited film bulk acoustic resonator (xbar) | |
| WO2022012438A1 (en) | Film bulk acoustic resonator and manufacturing method therefor | |
| US11706987B2 (en) | Semiconductor device and method of forming a semiconductor device | |
| CN114257195A (en) | Method for manufacturing film bulk acoustic resonator | |
| US20230030749A1 (en) | Hybrid fenced substrate for transversely-excited film bulk acoustic resonator frontside membrane release | |
| JP7251837B2 (en) | Thin-film bulk acoustic wave resonator and manufacturing method thereof | |
| CN115001434A (en) | Film bulk acoustic resonator with bifurcated electrodes |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |