WO2022012438A1 - Film bulk acoustic resonator and manufacturing method therefor - Google Patents
Film bulk acoustic resonator and manufacturing method therefor Download PDFInfo
- Publication number
- WO2022012438A1 WO2022012438A1 PCT/CN2021/105531 CN2021105531W WO2022012438A1 WO 2022012438 A1 WO2022012438 A1 WO 2022012438A1 CN 2021105531 W CN2021105531 W CN 2021105531W WO 2022012438 A1 WO2022012438 A1 WO 2022012438A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- electrode
- sacrificial layer
- gap
- forming
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 claims description 87
- 238000000034 method Methods 0.000 claims description 76
- 239000010409 thin film Substances 0.000 claims description 63
- 239000000463 material Substances 0.000 claims description 49
- 238000002161 passivation Methods 0.000 claims description 33
- 238000000059 patterning Methods 0.000 claims description 25
- 239000010408 film Substances 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 15
- 239000004020 conductor Substances 0.000 claims description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 239000005380 borophosphosilicate glass Substances 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 238000011049 filling Methods 0.000 claims description 2
- 239000005360 phosphosilicate glass Substances 0.000 claims description 2
- 239000011800 void material Substances 0.000 claims 4
- 239000010410 layer Substances 0.000 description 572
- 230000004048 modification Effects 0.000 description 19
- 238000012986 modification Methods 0.000 description 19
- 230000008569 process Effects 0.000 description 17
- 238000010586 diagram Methods 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000002955 isolation Methods 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000000306 component Substances 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 230000001788 irregular Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 230000001902 propagating effect Effects 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- AXQKVSDUCKWEKE-UHFFFAOYSA-N [C].[Ge].[Si] Chemical compound [C].[Ge].[Si] AXQKVSDUCKWEKE-UHFFFAOYSA-N 0.000 description 2
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910003334 KNbO3 Inorganic materials 0.000 description 1
- 229910003327 LiNbO3 Inorganic materials 0.000 description 1
- 229910012463 LiTaO3 Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 230000010356 wave oscillation Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/028—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired values of other parameters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H2009/02165—Tuning
- H03H2009/02173—Tuning of film bulk acoustic resonators [FBAR]
Abstract
The present invention relates to a film bulk acoustic resonator and a manufacturing method therefor. The film bulk acoustic resonator comprises: a first electrode, a piezoelectric layer and a second electrode which are stacked; an effective resonance area which comprises an area where the first electrode, the piezoelectric layer and the second electrode overlap with each other in a direction perpendicular to the surface of the piezoelectric layer, the area outside the effective resonance area being an ineffective area; a first dielectric layer, a first gap being provided between the upper surface of the first dielectric layer and a lower surface of the first electrode; a second dielectric layer, a second gap being provided between the lower surface of the second dielectric layer and an upper surface of the second electrode; a first conductive protrusion, one end of which is arranged on the lower surface of the first electrode, and the other end of which is connected to a first electrode lead-out part; and a second conductive protrusion, one end of which is arranged on the upper surface of the second electrode, and the other end of which is connected to a second electrode lead-out part. By means of the present invention, the quality factor of a resonator can be improved.
Description
本发明涉及半导体器件制造领域，尤其涉及一种薄膜体声波谐振器及其制造方法。The invention relates to the field of semiconductor device manufacturing, in particular to a thin-film bulk acoustic wave resonator and a manufacturing method thereof.
自模拟射频通讯技术在上世纪90代初被开发以来，射频前端模块已经逐渐成为通讯设备的核心组件。在所有射频前端模块中，滤波器已成为增长势头最猛、发展前景最大的部件。随着无线通讯技术的高速发展，5G通讯协议日渐成熟，市场对射频滤波器的各方面性能也提出了更为严格的标准。滤波器的性能由组成滤波器的谐振器单元决定。在现有的滤波器中，薄膜体声波谐振器(FBAR)因其体积小、插入损耗低、带外抑制大、品质因数高、工作频率高、功率容量大以及抗静电冲击能力良好等特点，成为最适合5G应用的滤波器之一。Since analog RF communication technology was developed in the early 1990s, RF front-end modules have gradually become the core components of communication equipment. Among all RF front-end modules, filters have become the most rapidly growing and most promising components. With the rapid development of wireless communication technology, the 5G communication protocol is becoming more and more mature, and the market has put forward stricter standards for the performance of RF filters in all aspects. The performance of the filter is determined by the resonator units that make up the filter. Among existing filters, thin-film bulk acoustic resonators (FBARs) are characterized by their small size, low insertion loss, large out-of-band suppression, high quality factor, high operating frequency, large power capacity, and good anti-static shock capability. Become one of the most suitable filters for 5G applications.
通常，薄膜体声波谐振器包括两个薄膜电极，并且两个薄膜电极之间设有压电薄膜层，其工作原理为利用压电薄膜层在交变电场下产生振动，该振动激励出沿压电薄膜层厚度方向传播的体声波，此声波传至上下电极与空气交界面被反射回来，进而在薄膜内部来回反射，形成震荡。当声波在压电薄膜层中传播正好是半波长的奇数倍时，形成驻波震荡。Generally, a thin-film bulk acoustic wave resonator includes two thin-film electrodes, and a piezoelectric thin-film layer is arranged between the two thin-film electrodes. The bulk acoustic wave propagating in the thickness direction of the electric film layer is transmitted to the interface between the upper and lower electrodes and the air and is reflected back, and then reflected back and forth inside the film to form an oscillation. Standing wave oscillations are formed when a sound wave propagates in a piezoelectric film layer that is exactly an odd multiple of a half-wavelength.
但是，目前制作出的空腔型薄膜体声波谐振器，其品质因子（Q）无法进一步提高，因此无法满足高性能的射频系统的需求。However, the quality factor (Q) of the cavity-type thin-film bulk acoustic wave resonators produced at present cannot be further improved, so it cannot meet the needs of high-performance radio frequency systems.
本发明的目的在于提供一种薄膜体声波谐振器及其制造方法，能够解决薄膜体声波谐振器的品质因数不高的问题。The purpose of the present invention is to provide a thin film bulk acoustic wave resonator and a manufacturing method thereof, which can solve the problem that the quality factor of the thin film bulk acoustic wave resonator is not high.
为了实现上述目的，本发明提供一种薄膜体声波谐振器，包括：层叠的第一电极、压电层和第二电极，有效谐振区包括所述第一电极、压电层和第二电极在垂直于所述压电层表面方向上相互重叠的区域，所述有效谐振区的外部为无效区；第一介质层，所述第一介质层的上表面与所述第一电极的下表面之间设有第一间隙；第二介质层，所述第二介质层的下表面与所述第二电极的上表面之间设有第二间隙；第一导电凸起，一端设置于所述第一电极的下表面，另一端连接有第一电极引出部；第二导电凸起，一端设置于所述第二电极的上表面，另一端连接有第二电极引出部。In order to achieve the above object, the present invention provides a thin film bulk acoustic resonator, comprising: a stacked first electrode, a piezoelectric layer and a second electrode, and the effective resonance region includes the first electrode, the piezoelectric layer and the second electrode in the The overlapping regions in the direction perpendicular to the surface of the piezoelectric layer, the outside of the effective resonance region is an inactive region; the first dielectric layer, the upper surface of the first dielectric layer and the lower surface of the first electrode are between the upper surface and the lower surface of the first electrode. A first gap is set between them; a second dielectric layer, a second gap is set between the lower surface of the second dielectric layer and the upper surface of the second electrode; The lower surface of an electrode is connected with the first electrode lead-out portion at the other end; the second conductive protrusion is arranged on the upper surface of the second electrode at one end, and the second electrode lead-out portion is connected at the other end.
本发明还提供一种薄膜体声波谐振器的制造方法，包括：形成第一结构，所述第一结构包括：第一电极、至少覆盖所述第一电极的第一牺牲层、至少在所述第一牺牲层侧面包围所述第一牺牲层的介质层；形成第一导电凸起，贯穿所述第一牺牲层、一端连接所述第一电极；形成第一电极引出部，一端连接所述第一导电凸起，另一端延伸出所述有效谐振区；形成压电层；形成第二结构，所述第二结构包括：第二电极、至少覆盖所述第二电极的第二牺牲层、至少在所述第二牺牲层侧面包围所述第二牺牲层的介质层；形成第二导电凸起，贯穿所述第二牺牲层、一端连接所述第二电极；形成第二电极引出部，一端连接所述第二导电凸起，另一端延伸出所述有效谐振区；去除所述第一牺牲层、第二牺牲层，形成所述第一间隙、第二间隙。The present invention also provides a method for manufacturing a thin film bulk acoustic resonator, comprising: forming a first structure, the first structure comprising: a first electrode, a first sacrificial layer covering at least the first electrode, at least on the The side of the first sacrificial layer surrounds the dielectric layer of the first sacrificial layer; a first conductive bump is formed, which penetrates through the first sacrificial layer and is connected to the first electrode at one end; a first conductive bump, the other end of which extends out of the effective resonance area; a piezoelectric layer is formed; a second structure is formed, the second structure includes: a second electrode, a second sacrificial layer covering at least the second electrode, A dielectric layer surrounding the second sacrificial layer at least on the side of the second sacrificial layer; forming a second conductive bump, penetrating the second sacrificial layer, and connecting one end to the second electrode; forming a second electrode lead-out portion, One end is connected to the second conductive protrusion, and the other end extends out of the effective resonance region; the first sacrificial layer and the second sacrificial layer are removed to form the first gap and the second gap.
本发明的有益效果在于：本发明的体声波谐振器，通过第一导电凸起和第一电极引出部将第一电极与外部信号连接，通过第二导电凸起和第二电极引出部将第二电极与外部信号连接，可以增大电极导出面积及阻抗，同时抑制电极间耦合效应，增强导热；第一间隙和第二间隙作为声波反射结构提高谐振器的品质因数；第一导电凸起和第二导电凸起所在的区域形成声阻抗失配区，能够使有效谐振区的边界与有效谐振区内部的声阻抗失配，有利于提高谐振器的品质因数；进一步地，第一导电凸起和第二导电凸起在承载衬底表面的投影为封闭或间断的环形，能够进一步抑制横向声波能量损失，提高谐振器的品质因数。The beneficial effect of the present invention is that: in the bulk acoustic wave resonator of the present invention, the first electrode is connected to the external signal through the first conductive protrusion and the first electrode lead-out portion, and the first electrode is connected to the external signal through the second conductive protrusion and the second electrode lead-out portion. The two electrodes are connected to external signals, which can increase the electrode lead-out area and impedance, while suppressing the coupling effect between electrodes and enhancing heat conduction; the first gap and the second gap serve as acoustic wave reflection structures to improve the quality factor of the resonator; the first conductive protrusion and The area where the second conductive protrusions are located forms an acoustic impedance mismatch area, which can make the boundary of the effective resonance area and the acoustic impedance inside the effective resonance area mismatch, which is beneficial to improve the quality factor of the resonator; further, the first conductive protrusions The projection of the second conductive protrusion and the second conductive protrusion on the surface of the carrier substrate is a closed or discontinuous ring, which can further suppress the loss of transverse acoustic wave energy and improve the quality factor of the resonator.
进一步地，第一电极和第二电极的侧边暴露在间隙中，能够抑制横波损失；进一步地，压电层的边缘暴露在间隙中，能够进一步的抑制横波损失；进一步地，压电层为完整的膜层，可以保证压电层的压电特性；本发明的体声波谐振器的制造方法中，压电层形成在平整的电极层上，可以使压电层具有较好的晶格取向，提高压电层的压电特性，进而提高谐振器的整体性能；进一步地，第一电极层、压电材料层、第二电极层可以同步刻蚀，节省工艺时间；进一步地，第一牺牲层和第二牺牲层可以同时去除也可以分步去除，提高工艺流程灵活性。Further, the side edges of the first electrode and the second electrode are exposed in the gap, which can suppress the shear wave loss; further, the edge of the piezoelectric layer is exposed in the gap, which can further suppress the shear wave loss; further, the piezoelectric layer is A complete film layer can ensure the piezoelectric properties of the piezoelectric layer; in the manufacturing method of the bulk acoustic wave resonator of the present invention, the piezoelectric layer is formed on the flat electrode layer, which can make the piezoelectric layer have better lattice orientation , to improve the piezoelectric properties of the piezoelectric layer, thereby improving the overall performance of the resonator; further, the first electrode layer, the piezoelectric material layer, and the second electrode layer can be etched synchronously, saving process time; further, the first sacrifice The layer and the second sacrificial layer can be removed simultaneously or in steps, improving process flow flexibility.
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。In order to explain the embodiments of the present invention or the technical solutions in the prior art more clearly, the following briefly introduces the accompanying drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only These are some embodiments of the present invention. For those of ordinary skill in the art, other drawings can also be obtained according to these drawings without creative efforts.
图1示出了本发明实施例1的一种薄膜体声波谐振器的结构示意图。FIG. 1 shows a schematic structural diagram of a thin film bulk acoustic wave resonator according to Embodiment 1 of the present invention.
图2示出了本发明实施例2的一种薄膜体声波谐振器的结构示意图。FIG. 2 shows a schematic structural diagram of a thin film bulk acoustic wave resonator according to Embodiment 2 of the present invention.
图3示出了本发明实施例3的一种薄膜体声波谐振器的结构示意图。FIG. 3 shows a schematic structural diagram of a thin film bulk acoustic wave resonator according to Embodiment 3 of the present invention.
图4至图14示出了本发明实施例4的一种薄膜体声波谐振器的制造方法不同步骤中对应的结构示意图。FIG. 4 to FIG. 14 are schematic structural diagrams corresponding to different steps of a method for manufacturing a thin-film bulk acoustic resonator according to Embodiment 4 of the present invention.
[根据细则26改正23.07.2021]
图15至图21示出了本发明实施例5的一种薄膜体声波谐振器的制造方法不同步骤中对应的结构示意图。[Corrected 23.07.2021 in accordance with Rule 26]
FIG. 15 to FIG. 21 are schematic structural diagrams corresponding to different steps of a method for manufacturing a thin-film bulk acoustic resonator according to Embodiment 5 of the present invention.
图15至图21示出了本发明实施例5的一种薄膜体声波谐振器的制造方法不同步骤中对应的结构示意图。[Corrected 23.07.2021 in accordance with Rule 26]
FIG. 15 to FIG. 21 are schematic structural diagrams corresponding to different steps of a method for manufacturing a thin-film bulk acoustic resonator according to Embodiment 5 of the present invention.
图22至图30示出了本发明实施例6的一种薄膜体声波谐振器的制造方法不同步骤中对应的结构示意图。FIG. 22 to FIG. 30 are schematic structural diagrams corresponding to different steps of a method for manufacturing a thin-film bulk acoustic resonator according to Embodiment 6 of the present invention.
附图标记说明：100-承载衬底；101A-至少在所述第一牺牲层侧面包围所述第一牺牲层的介质层；101B-第一钝化层；101-第一介质层；102A-至少在所述第二牺牲层侧面包围所述第二牺牲层的介质层；102B-第二钝化层；102-第二介质层；200-临时衬底；201’-第一电极层；201-第一电极；202-压电层；203’-第二电极层；203-第二电极；210-第一牺牲层；220-第二牺牲层；211-第一间隙；221-第二间隙；301-第一导电凸起；302-第二导电凸起；303-第一电极引出部；304-第二电极引出部；10-第一空腔；212-释放孔。Description of reference numerals: 100-carrying substrate; 101A-dielectric layer surrounding the first sacrificial layer at least on the side of the first sacrificial layer; 101B-first passivation layer; 101-first dielectric layer; 102A- 102B—the second passivation layer; 102—the second dielectric layer; 200—the temporary substrate; 201′—the first electrode layer; 201 202-piezoelectric layer; 203'-second electrode layer; 203-second electrode; 210-first sacrificial layer; 220-second sacrificial layer; 211-first gap; 221-second gap 301-first conductive bump; 302-second conductive bump; 303-first electrode lead-out; 304-second electrode lead-out; 10-first cavity; 212-release hole.
目前制作出的空腔型薄膜体声波谐振器，存在横波损失，使品质因子（Q）无法进一步提高的问题，因此无法满足高性能的射频系统的需求。The cavity-type thin-film bulk acoustic wave resonator produced at present has the problem of shear wave loss, so that the quality factor (Q) cannot be further improved, so it cannot meet the needs of high-performance radio frequency systems.
以下结合附图和具体实施例对本发明的薄膜体声波谐振器及其制作方法作进一步详细说明。根据下面的说明和附图，本发明的优点和特征将更清楚，然而，需说明的是，本发明技术方案的构思可按照多种不同的形式实施，并不局限于在此阐述的特定实施例。附图均采用非常简化的形式且均使用非精准的比例，仅用以方便、明晰地辅助说明本发明实施例的目的。The thin film bulk acoustic wave resonator and the manufacturing method thereof of the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description and accompanying drawings. However, it should be noted that the concept of the technical solution of the present invention can be implemented in various forms, and is not limited to the specific implementation described here. example. The accompanying drawings are all in a very simplified form and in an inaccurate scale, and are only used to facilitate and clearly assist the purpose of explaining the embodiments of the present invention.
在说明书和权利要求书中的术语“第一”“第二”等用于在类似要素之间进行区分，且未必是用于描述特定次序或时间顺序。要理解，在适当情况下，如此使用的这些术语可替换，例如可使得本文所述的本发明实施例能够以不同于本文所述的或所示的其他顺序来操作。类似的，如果本文所述的方法包括一系列步骤，且本文所呈现的这些步骤的顺序并非必须是可执行这些步骤的唯一顺序，且一些所述的步骤可被省略和/或一些本文未描述的其他步骤可被添加到该方法。若某附图中的构件与其他附图中的构件相同，虽然在所有附图中都可轻易辨认出这些构件，但为了使附图的说明更为清楚，本说明书不会将所有相同构件的标号标于每一图中。The terms "first," "second," and the like, in the specification and claims are used to distinguish between similar elements, and are not necessarily used to describe a particular order or chronological order. It is to be understood that the terms so used are interchangeable under appropriate circumstances, eg, to enable the embodiments of the invention described herein to operate in other sequences than described or illustrated herein. Similarly, if a method described herein includes a series of steps, the order of the steps presented herein is not necessarily the only order in which the steps may be performed, and some of the steps described may be omitted and/or some not described herein Additional steps can be added to this method. If the components in a certain drawing are the same as the components in other drawings, although these components can be easily identified in all the drawings, in order to make the description of the drawings clearer, this specification will not refer to all the same components. Numbers are attached to each figure.
实施例Example
11
本发明实施例1提供了一种薄膜体声波谐振器，图1为本发明实施例1的薄膜体声波谐振器的结构示意图，请参考图1，所述薄膜体声波谐振器包括：从下至上包括依次层叠的第一电极201、压电层202和第二电极203，有效谐振区包括所述第一电极201、压电层202和第二电极203在垂直于所述压电层202表面方向上相互重叠的区域，所述有效谐振区的外部为无效区；第一介质层101，所述第一介质层101的上表面与所述第一电极201的下表面之间设有第一间隙211；第二介质层102，所述第二介质层102的下表面与所述第二电极202的上表面与所述之间设有第二间隙221；第一导电凸起301，一端设置于所述第一电极201的下表面，另一端连接有第一电极引出部303；第二导电凸起302，一端设置于所述第二电极202的上表面，另一端连接有第二电极引出部304。Embodiment 1 of the present invention provides a thin-film bulk acoustic resonator. FIG. 1 is a schematic structural diagram of the thin-film bulk acoustic resonator according to Embodiment 1 of the present invention. Please refer to FIG. 1. The thin-film bulk acoustic resonator includes: from bottom to top It includes a first electrode 201 , a piezoelectric layer 202 and a second electrode 203 stacked in sequence, and the effective resonance region includes the first electrode 201 , the piezoelectric layer 202 and the second electrode 203 in a direction perpendicular to the surface of the piezoelectric layer 202 In the first dielectric layer 101, a first gap is set between the upper surface of the first dielectric layer 101 and the lower surface of the first electrode 201 211; the second dielectric layer 102, a second gap 221 is provided between the lower surface of the second dielectric layer 102 and the upper surface of the second electrode 202; the first conductive protrusion 301, one end is provided on The lower surface of the first electrode 201 is connected with the first electrode lead-out portion 303 at the other end; the second conductive protrusion 302 is arranged on the upper surface of the second electrode 202 at one end and connected with the second electrode lead-out portion at the other end. 304.
参考图1，本实施例中，还包括承载衬底100。第一介质层101和承载衬底100可以通过键合层或沉积的方式进行结合。键合层的材料包括氧化硅、氮化硅、氮氧化硅、碳氮化硅或硅酸乙酯。本实施例中，第一介质层101通过沉积的方式形成在承载衬底100上。第一介质层可以为单层结构，也可以为叠层结构。第一介质层的材料可以包括但不限于氧化硅、氮化硅、氮氧化硅、碳氮化硅等材料中的一种，但本发明的技术不仅仅限定于此。Referring to FIG. 1 , in this embodiment, a carrier substrate 100 is further included. The first dielectric layer 101 and the carrier substrate 100 may be combined by bonding layers or deposition. The material of the bonding layer includes silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride or ethyl silicate. In this embodiment, the first dielectric layer 101 is formed on the carrier substrate 100 by means of deposition. The first dielectric layer may have a single-layer structure or a stacked-layer structure. The material of the first dielectric layer may include, but is not limited to, one of silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride, etc., but the technology of the present invention is not limited to this.
承载衬底100的材质可以为本领域技术人员熟知的任意合适的底材，例如可以是以下所提到的材料中的至少一种：硅(Si)、锗(Ge)、锗硅 (SiGe)、碳硅(SiC)、碳锗硅(SiGeC)、砷化铟(InAs)、砷化镓(GaAs)、磷化铟(InP)或者其它III/V化合物半导体。The material of the carrier substrate 100 can be any suitable substrate known to those skilled in the art, for example, it can be at least one of the following materials: silicon (Si), germanium (Ge), silicon germanium (SiGe) , silicon carbon (SiC), silicon germanium carbon (SiGeC), indium arsenide (InAs), gallium arsenide (GaAs), indium phosphide (InP) or other III/V compound semiconductors.
第一介质层101的上方从下至上依次包括叠层设置的第一电极201、压电层202，第二电极203。第二电极202和第一电极201可以使用本领域技术任意熟知的任意合适的导电材料或半导体材料，其中，导电材料可以为具有导电性能的金属材料，例如，由钼（Mo）、铝（Al）、铜（Cu）、钨（W）、钽（Ta）、铂（Pt）、钌（Ru）、铑（Rh）、铱（Ir）、铬（Cr）、钛（Ti）、金(Au)、锇(Os)、铼(Re)、钯(Pd)等金属中一种制成或由上述金属形成的叠层制成。半导体材料例如是Si、Ge、SiGe、SiC、SiGeC等。压电层202的材料可以使用氮化铝(AlN)、氧化锌(ZnO)、锆钛酸铅(PZT)、铌酸锂(LiNbO3)、石英(Quartz)、铌酸钾(KNbO3)或钽酸锂(LiTaO3)等具有纤锌矿型结晶结构的压电材料及它们的组合。当压电层202包括氮化铝(AlN)时，压电层202还可包括稀土金属，例如钪(Sc)、铒(Er)、钇(Y)和镧(La)中的至少一种。此外，当压电层202包括氮化铝(AlN) 时，压电层202还可包括过渡金属，例如锆(Zr)、钛(Ti)、锰(Mn)和铪(Hf)中的至少一种。可以使用化学气相沉积、物理气相沉积或原子层沉积等本领域技术人员熟知的任何适合的方法沉积形成压电层202。The top of the first dielectric layer 101 includes a first electrode 201 , a piezoelectric layer 202 , and a second electrode 203 that are stacked in sequence from bottom to top. The second electrode 202 and the first electrode 201 can use any suitable conductive material or semiconductor material known in the art, wherein the conductive material can be a metal material with conductive properties, such as molybdenum (Mo), aluminum (Al) ), copper (Cu), tungsten (W), tantalum (Ta), platinum (Pt), ruthenium (Ru), rhodium (Rh), iridium (Ir), chromium (Cr), titanium (Ti), gold (Au) ), osmium (Os), rhenium (Re), palladium (Pd) and other metals, or a laminate of the above metals. The semiconductor material is, for example, Si, Ge, SiGe, SiC, SiGeC, or the like. The piezoelectric layer 202 can be made of aluminum nitride (AlN), zinc oxide (ZnO), lead zirconate titanate (PZT), lithium niobate (LiNbO3), quartz (Quartz), potassium niobate (KNbO3) or tantalic acid Piezoelectric materials having a wurtzite crystal structure, such as lithium (LiTaO3), and combinations thereof. When the piezoelectric layer 202 includes aluminum nitride (AlN), the piezoelectric layer 202 may further include a rare earth metal such as at least one of scandium (Sc), erbium (Er), yttrium (Y), and lanthanum (La). In addition, when the piezoelectric layer 202 includes aluminum nitride (AlN), the piezoelectric layer 202 may further include a transition metal such as at least one of zirconium (Zr), titanium (Ti), manganese (Mn), and hafnium (Hf). kind. The piezoelectric layer 202 may be deposited using any suitable method known to those skilled in the art, such as chemical vapor deposition, physical vapor deposition, or atomic layer deposition.
本实施例中，第一介质层101的上表面中间凹陷，外周凸出。其中第一电极201的下表面与第一介质层101凹陷区域的上表面之间设有第一间隙211。本实施例中，第一间隙211的边界大于第一电极201的边界，使第一电极201边缘外周的压电层202的底面也暴露在第一间隙211中。压电层202为水平完整的膜层，四周延伸至第一介质层101凸出区域的表面上方。第一电极201的边缘完全暴露在第一间隙211中，可以使第一电极201的边缘与空气形成反射界面，使声阻抗失配，抑制横波泄露，进而提升谐振器的品质因子（Q值）。In this embodiment, the upper surface of the first dielectric layer 101 is concave in the middle and protruding at the outer periphery. A first gap 211 is provided between the lower surface of the first electrode 201 and the upper surface of the recessed area of the first dielectric layer 101 . In this embodiment, the boundary of the first gap 211 is larger than the boundary of the first electrode 201 , so that the bottom surface of the piezoelectric layer 202 around the edge of the first electrode 201 is also exposed in the first gap 211 . The piezoelectric layer 202 is a horizontally complete film layer, and the periphery extends to above the surface of the protruding area of the first dielectric layer 101 . The edge of the first electrode 201 is completely exposed in the first gap 211, which can make the edge of the first electrode 201 and the air form a reflection interface, make the acoustic impedance mismatch, suppress the leakage of shear waves, and further improve the quality factor (Q value) of the resonator .
第二介质层102位于第一介质层101上方。第二介质层102的材料可以包括但不限于氧化硅、氮化硅、氮氧化硅、碳氮化硅等材料中的一种，第二介质层可以为单层结构，也可以为叠层结构。本实施例中，第二介质层102的下表面中间凹陷，外周凸出。其中第二电极203的上表面与第二介质层102凹陷区域的下表面之间设有第二间隙221。本实施例中，第二间隙221的边界大于第二电极203的边界，使第二电极203边缘外周的压电层202的上表面暴露在第二间隙221中。第二电极203的边缘完全暴露在第二间隙221中，可以使第二电极203的边缘与空气形成反射界面，使声阻抗失配，抑制横波泄露，进而提升谐振器的品质因子（Q值）。The second dielectric layer 102 is located above the first dielectric layer 101 . The material of the second dielectric layer 102 may include, but is not limited to, one of silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride, etc. The second dielectric layer may have a single-layer structure or a stacked-layer structure . In this embodiment, the middle of the lower surface of the second dielectric layer 102 is concave, and the outer periphery is convex. A second gap 221 is provided between the upper surface of the second electrode 203 and the lower surface of the recessed area of the second dielectric layer 102 . In this embodiment, the boundary of the second gap 221 is larger than the boundary of the second electrode 203 , so that the upper surface of the piezoelectric layer 202 around the edge of the second electrode 203 is exposed in the second gap 221 . The edge of the second electrode 203 is completely exposed in the second gap 221, which can make the edge of the second electrode 203 and the air form a reflective interface, make the acoustic impedance mismatch, suppress the leakage of shear waves, and further improve the quality factor (Q value) of the resonator .
本实施例中，第二介质层102的凹陷区域及第二间隙221与第一介质层101的凹陷区域及第二间隙211相对设置，第二介质层102的凸出区域与第一介质层101的凸出区域相对设置。谐振器的有效谐振区包括所述第一电极201、压电层202和第二电极203在垂直于所述压电层202表面方向上相互重叠的区域。本实施例中，所述第一间隙211且所述第二间隙221在所述压电层202方向上的投影的边界包围所述有效谐振区在所述压电层202方向上的投影的边界。其中“包围”的意思为有效谐振区的边界在第一间隙211且第二间隙221内，或者有效谐振区的边界和第一间隙和/或第二间隙的边界重合。图1示出的情况为有效谐振区的边界在第一间隙211且第二间隙221内。本实施例中，所述第一间隙211且所述第二间隙221在所述压电层202方向上的投影的边界包围所述第一电极201和所述第二电极203在所述压电层202方向上的投影的边界。其中“包围”的含义同前文所述。In this embodiment, the recessed area and the second gap 221 of the second dielectric layer 102 are disposed opposite to the recessed area and the second gap 211 of the first dielectric layer 101 , and the protruding area of the second dielectric layer 102 is opposite to the first dielectric layer 101 The convex area of is set relatively. The effective resonance region of the resonator includes a region where the first electrode 201 , the piezoelectric layer 202 and the second electrode 203 overlap each other in a direction perpendicular to the surface of the piezoelectric layer 202 . In this embodiment, the boundary of the projection of the first gap 211 and the second gap 221 in the direction of the piezoelectric layer 202 surrounds the boundary of the projection of the effective resonance region in the direction of the piezoelectric layer 202 . "Enclosed" means that the boundary of the effective resonance region is within the first gap 211 and the second gap 221, or the boundary of the effective resonance region coincides with the boundary of the first gap and/or the second gap. The situation shown in FIG. 1 is that the boundary of the effective resonance region is within the first gap 211 and the second gap 221 . In this embodiment, the boundary of the projection of the first gap 211 and the second gap 221 in the direction of the piezoelectric layer 202 surrounds the first electrode 201 and the second electrode 203 in the piezoelectric layer. The boundary of the projection in the layer 202 direction. The meaning of "surrounding" is the same as that described above.
在另一个实施例中，所述第一电极位于所述第一间隙的边界围成的区域内，或者二者边界重合；或，所述第二电极位于所述第二间隙的边界围成的区域内，或者二者边界重合。或者，第一电极201的边缘延伸出第一间隙211所在的区域，第二电极203的边缘位于第二间隙221内；或者第一电极201的边缘位于第一间隙211内，第二电极203的边缘延伸出第二间隙221；当然，还可以是第一电极201的一部分边缘在第一间隙211内，另一部分边缘延伸出第一间隙211，或第二电极203的一部分边缘在第二间隙221内，另一部分边缘延伸出第二间隙221。当第一电极201和第二电极203的边缘都暴露在各自的间隙中时，可以增大声阻抗失配的区域，进一步抑制横波泄露，提升谐振器的品质因子（Q值）。In another embodiment, the first electrode is located in the area enclosed by the boundary of the first gap, or the boundaries of the two overlap; or, the second electrode is located in the area enclosed by the boundary of the second gap. area, or the boundaries of the two coincide. Alternatively, the edge of the first electrode 201 extends beyond the region where the first gap 211 is located, and the edge of the second electrode 203 is located in the second gap 221; or the edge of the first electrode 201 is located in the first gap 211, and the edge of the second electrode 203 The edge extends out of the second gap 221 ; of course, a part of the edge of the first electrode 201 may also be in the first gap 211 , and another part of the edge extends out of the first gap 211 , or a part of the edge of the second electrode 203 is in the second gap 221 Inside, another part of the edge extends out of the second gap 221 . When the edges of the first electrode 201 and the second electrode 203 are both exposed in their respective gaps, the area of acoustic impedance mismatch can be increased, the shear wave leakage can be further suppressed, and the quality factor (Q value) of the resonator can be improved.
本实施例中，所述压电层202包括谐振部2021和位于所述谐振部外周的搭接部2022，所述谐振部2021位于所述有效谐振区，所述搭接部2022位于所述有效谐振区外。具体地，本实施例中，压电层202为完整的膜层，谐振部2021和搭接部2022为一体结构。第一间隙211和第二间隙221被压电层202相互隔离。在另一个实施例中，所述第一间隙和所述第二间隙可以通过分布于无效区的多个通孔连通，例如通孔贯穿无效区的压电层。或者所述第一间隙、第二间隙通过包围有效区的环形通孔连通（环形通孔贯穿压电层），此时环形通孔的内壁可以构成有效谐振区的边界，环形通孔的内壁也可以位于有效谐振区边界的外部。在另一个实施例中，无效区的所述第一间隙和所述第二间隙之间设有膜层，所述膜层为压电层或与压电层材料不同的膜层；或者，所述压电层仅位于所述有效谐振区。In this embodiment, the piezoelectric layer 202 includes a resonance portion 2021 and a lap portion 2022 located on the outer periphery of the resonance portion. The resonance portion 2021 is located in the effective resonance region, and the overlap portion 2022 is located in the effective resonance region. outside the resonance region. Specifically, in this embodiment, the piezoelectric layer 202 is a complete film layer, and the resonance portion 2021 and the overlapping portion 2022 are integral structures. The first gap 211 and the second gap 221 are isolated from each other by the piezoelectric layer 202 . In another embodiment, the first gap and the second gap may be communicated through a plurality of through holes distributed in the inactive region, for example, the through holes penetrate through the piezoelectric layer of the inactive region. Or the first gap and the second gap are communicated through the annular through hole surrounding the effective area (the annular through hole penetrates the piezoelectric layer), at this time, the inner wall of the annular through hole can form the boundary of the effective resonance area, and the inner wall of the annular through hole also may be located outside the boundaries of the effective resonant region. In another embodiment, a film layer is provided between the first gap and the second gap in the inactive region, and the film layer is a piezoelectric layer or a film layer of a material different from that of the piezoelectric layer; The piezoelectric layer is located only in the effective resonance region.
第一电极201的下表面设有第一导电凸起301。第一导电凸起301可以为单个或多个柱状。本实施例中，第一导电凸起301设置在有效谐振区的边缘，在压电层202表面方向上的投影为环形，其中环形包括间断或者封闭的环形。环形的形状可以是圆形，椭圆形，多边形，或者由弧线和直边共同构成的不规则形状。封闭的环形意味着第一导电凸起301是连续的，不封闭的环形意味着第一导电凸起301是不连续的。第一导电凸起301所在的区域与有效谐振区形成声阻抗失配，从而能够将向外传播的横向声波反射回有效谐振区内，以抑制横向杂波的泄露，减小能量损耗，提高谐振器的品质因子（Q值）。当第一导电凸起301在压电层302表面的投影为封闭的环形时，更有利于防止声波的横向泄露。The lower surface of the first electrode 201 is provided with a first conductive bump 301 . The first conductive bumps 301 may be single or multiple columns. In this embodiment, the first conductive protrusions 301 are disposed at the edge of the effective resonance region, and the projection on the surface direction of the piezoelectric layer 202 is a ring shape, wherein the ring shape includes a discontinuous or closed ring shape. The shape of the ring can be a circle, an ellipse, a polygon, or an irregular shape composed of arcs and straight sides. A closed loop means that the first conductive bumps 301 are continuous, and an open loop means that the first conductive bumps 301 are discontinuous. The area where the first conductive protrusion 301 is located forms an acoustic impedance mismatch with the effective resonance area, so that the outwardly propagating transverse acoustic waves can be reflected back to the effective resonance area, so as to suppress the leakage of transverse clutter, reduce energy loss, and improve resonance The quality factor (Q value) of the device. When the projection of the first conductive protrusion 301 on the surface of the piezoelectric layer 302 is a closed ring shape, it is more beneficial to prevent the lateral leakage of sound waves.
第一导电凸起301的另一端连接有第一电极引出部303。本实施例中第一电极引出部303埋设于所述第一介质层101中。在其他实施例中，第一电极引出部303也可以位于第一介质层101凹陷区域的上表面。从图1中可以看出，所述第一电极引出部303从所述有效谐振区所在侧向外侧引出。第一电极引出部303可以作为信号输入端将电信号引入有效谐振区的第一电极201，也可以作为信号输出端将第一电极201上的电信号输出。The other end of the first conductive bump 301 is connected to the first electrode lead-out portion 303 . In this embodiment, the first electrode lead-out portion 303 is embedded in the first dielectric layer 101 . In other embodiments, the first electrode lead-out portion 303 may also be located on the upper surface of the recessed area of the first dielectric layer 101 . As can be seen from FIG. 1 , the first electrode lead-out portion 303 is led out from the side where the effective resonance region is located to the outside. The first electrode lead-out portion 303 can be used as a signal input terminal to introduce an electrical signal into the first electrode 201 in the effective resonance region, and can also be used as a signal output terminal to output the electrical signal on the first electrode 201 .
第二电极203的上表面设有第二导电凸起302。第二导电凸起302可以为单个或多个柱状。本实施例中，第二导电凸起302设置在有效谐振区的边缘，在压电层202表面方向上的投影为环形，其中环形包括间断或者封闭的环形。环形的形状可以是圆形，椭圆形，多边形，或者由弧线和直边共同构成的不规则形状。封闭的环形意味着第二导电凸起302是连续的，不封闭的环形意味着第二导电凸起302是不连续的。第二导电凸起302所在的区域与有效谐振区形成声阻抗失配，从而能够将向外传播的横向声波反射回有效谐振区内，以抑制横向杂波的泄露，减小能量损耗，提高谐振器的品质因子（Q值）。当第二导电凸起302在压电层302表面的投影为封闭的环形时，更有利于防止声波的横向泄露。The upper surface of the second electrode 203 is provided with a second conductive bump 302 . The second conductive bumps 302 may be single or multiple columns. In this embodiment, the second conductive protrusions 302 are arranged at the edge of the effective resonance region, and the projection on the surface direction of the piezoelectric layer 202 is a ring shape, wherein the ring shape includes a discontinuous or closed ring shape. The shape of the ring can be a circle, an ellipse, a polygon, or an irregular shape composed of arcs and straight sides. A closed loop means that the second conductive bumps 302 are continuous, and an open loop means that the second conductive bumps 302 are discontinuous. The area where the second conductive protrusion 302 is located forms an acoustic impedance mismatch with the effective resonance area, so that the lateral acoustic waves propagating outward can be reflected back to the effective resonance area, so as to suppress the leakage of lateral clutter, reduce energy loss, and improve resonance The quality factor (Q value) of the device. When the projection of the second conductive protrusions 302 on the surface of the piezoelectric layer 302 is a closed ring shape, it is more beneficial to prevent the lateral leakage of sound waves.
第二导电凸起302的另一端连接有第二电极引出部304。本实施例中第二电极引出部304埋设于所述第二介质层102中。在其他实施例中，第二电极引出部304也可以位于第二介质层101凹陷区域的下表面。从图1中可以看出，所述第二电极引出部304从所述有效谐振区所在侧向外侧引出。第二电极引出部304可以作为信号输入端将电信号引入有效谐振区的第二电极203，也可以作为信号输出端将第二电极203上的电信号输出。当第一电极引出部303作为信号输入端时，第二电极引出部304作为信号输出端，反之，亦然。The other end of the second conductive bump 302 is connected to the second electrode lead-out portion 304 . In this embodiment, the second electrode lead-out portion 304 is embedded in the second dielectric layer 102 . In other embodiments, the second electrode lead-out portion 304 may also be located on the lower surface of the recessed region of the second dielectric layer 101 . It can be seen from FIG. 1 that the second electrode lead-out portion 304 is drawn out from the side where the effective resonance region is located to the outside. The second electrode lead-out portion 304 can be used as a signal input terminal to introduce an electrical signal into the second electrode 203 in the effective resonance region, and can also be used as a signal output terminal to output the electrical signal on the second electrode 203 . When the first electrode lead-out portion 303 serves as a signal input end, the second electrode lead-out portion 304 serves as a signal output end, and vice versa.
本实施例中，所述第一导电凸起301和所述第二导电凸起302在所述压电层202方向上的投影至少部分重合。其中至少部分重合包括：1、第一导电凸起301和第二导电凸起302的投影形状一致，两者完全重叠。2、第一导电凸起301和第二导电凸起302其中之一的投影面积大于另一投影的面积，面积较大的投影覆盖面积较小的投影。3、两个投影的形状趋势大致相同，两者的重叠部分是连续的，或者其中一个投影与另一投影只有一部分区域设有重叠的部分。这种设置方式使两导电凸起声阻抗失配效果叠加，有效防止声波的横向泄露，进一步提高了谐振器的品质因数。In this embodiment, the projections of the first conductive bumps 301 and the second conductive bumps 302 in the direction of the piezoelectric layer 202 at least partially overlap. The at least partial overlap includes: 1. The projected shapes of the first conductive bump 301 and the second conductive bump 302 are the same, and the two completely overlap. 2. The projected area of one of the first conductive bumps 301 and the second conductive bumps 302 is larger than that of the other projection, and the projection with a larger area covers the projection with a smaller area. 3. The shape trends of the two projections are roughly the same, and the overlapping parts of the two projections are continuous, or one projection and the other projection only have an overlapping part in a part of the area. This arrangement makes the acoustic impedance mismatch effect of the two conductive protrusions superimposed, effectively preventing the lateral leakage of the acoustic wave, and further improving the quality factor of the resonator.
在另一个实施例中，其中一导电凸起在压电层表面方向上的投影位于另一导电凸起在压电层表面方向上投影的外周，如两个导电凸起均为环形时，其中一个环形包围另一个环形。这种情况下，当横向声波传输至其中一导电凸起所在区域时，产生一次声波反射，当剩余的横向声波继续传输至另一导电凸起所在区域时，又产生一次声波反射，通过两次反射，有效阻止了横向声波的泄露，提高了谐振器的品质因数。In another embodiment, the projection of one conductive protrusion in the direction of the surface of the piezoelectric layer is located at the outer circumference of the projection of the other conductive protrusion in the direction of the surface of the piezoelectric layer, such as when the two conductive protrusions are annular, wherein One ring surrounds the other ring. In this case, when the transverse acoustic wave is transmitted to the area where one of the conductive protrusions is located, a sound wave reflection is generated, and when the remaining transverse acoustic wave continues to transmit to the area where the other conductive protrusion is located, another acoustic wave reflection is generated, passing through twice Reflection effectively prevents the leakage of transverse acoustic waves and improves the quality factor of the resonator.
本实施例中，所述第一电极引出部303和所述第二电极引出部304在所述压电层202方向上的投影相互错开。避免由于电位浮空产生的高频耦合，防止寄生电容效应。In this embodiment, the projections of the first electrode lead-out portion 303 and the second electrode lead-out portion 304 in the direction of the piezoelectric layer 202 are staggered from each other. Avoid high-frequency coupling due to potential floating, and prevent parasitic capacitance effects.
在另一个实施例中，第一导电凸起301和第二导电凸起302在压电层表面方向上的投影共同组成环形。应当理解，当第一导电凸起40a和/或第二凸起40b在压电层表面方向上的投影为封闭图形时，更有利于防止声波的横向泄露。In another embodiment, the projections of the first conductive bumps 301 and the second conductive bumps 302 on the surface direction of the piezoelectric layer together form a ring shape. It should be understood that when the projection of the first conductive protrusions 40a and/or the second protrusions 40b in the direction of the surface of the piezoelectric layer is a closed figure, it is more beneficial to prevent the lateral leakage of sound waves.
第一导电凸起301或第二导电凸起302的材料为导电材料，如：金、银、钨、铂、铝、铜等低电阻率的材料。The material of the first conductive bump 301 or the second conductive bump 302 is a conductive material, such as gold, silver, tungsten, platinum, aluminum, copper and other materials with low resistivity.
第一电极引出部303或第二电极引出部304的材料可以参照第一导电凸起301或第二导电凸起302的材料，导电凸起的材料可以和电极引出部的材料相同或者不同。The material of the first electrode lead-out portion 303 or the second electrode lead-out portion 304 can refer to the material of the first conductive bump 301 or the second conductive bump 302, and the material of the conductive bump can be the same or different from that of the electrode lead-out portion.
实施例Example
22
本发明实施例2提供了一种薄膜体声波谐振器，图2为本发明实施例2的薄膜体声波谐振器的结构示意图，本实施例与实施例1的区别在于，本实施例中，压电层202的谐振部2021与搭接部2022相互分离。请参考图2，具体结构如下：压电层202的谐振部2021与搭接部2022相互分离，第一电极201的边缘暴露在第一间隙211中，第二电极203的边缘暴露在第二间隙221中，第一间隙211和第二间隙221相互连通，形成一个整体的空腔，谐振部2021位于空腔内，搭接部2022位于空腔外，搭接部2022和谐振部2021完全分离，使谐振部2021的外周均暴露在空腔中。图2中所示，压电层的谐振部2021的边缘与第一电极201、第二电极203的边缘三者重合，构成了有效谐振区的边缘，此时谐振部2021全部位于位于有效谐振区。。在另一个实施例中，谐振部2021与搭接部2022既有相互连接的部分，也有相互分离的部分。暴露在空腔中的谐振部2021的边缘与空气形成反射界面，使声阻抗失配，抑制横波泄露，进而提升谐振器的品质因子（Q值）。当谐振部2021与搭接部2022完全分离，使谐振部2021的边缘完全暴露在空腔中时，防止横波泄露的效果最好。当谐振部2021与搭接部2022既有相互连接的部分，也有相互分离的部分时，可以提高谐振器的结构强度。本实施例其他结构部分参照实施例1，此处不在赘述。Embodiment 2 of the present invention provides a thin-film bulk acoustic resonator. FIG. 2 is a schematic structural diagram of the thin-film bulk acoustic resonator of Embodiment 2 of the present invention. The difference between this embodiment and Embodiment 1 is that in this embodiment, the pressure The resonance portion 2021 and the overlapping portion 2022 of the electrical layer 202 are separated from each other. Please refer to FIG. 2 , the specific structure is as follows: the resonance portion 2021 and the overlapping portion 2022 of the piezoelectric layer 202 are separated from each other, the edge of the first electrode 201 is exposed in the first gap 211 , and the edge of the second electrode 203 is exposed in the second gap In 221, the first gap 211 and the second gap 221 communicate with each other to form an integral cavity, the resonance part 2021 is located in the cavity, the overlapping part 2022 is located outside the cavity, and the overlapping part 2022 and the resonance part 2021 are completely separated, The outer periphery of the resonance portion 2021 is all exposed in the cavity. As shown in FIG. 2 , the edge of the resonance portion 2021 of the piezoelectric layer coincides with the edges of the first electrode 201 and the second electrode 203 to form the edge of the effective resonance region. At this time, the resonance portion 2021 is all located in the effective resonance region. . . In another embodiment, the resonating part 2021 and the overlapping part 2022 have both parts connected to each other and parts separated from each other. The edge of the resonant part 2021 exposed in the cavity forms a reflection interface with the air, which makes the acoustic impedance mismatch, suppresses the leakage of shear waves, and further improves the quality factor (Q value) of the resonator. When the resonance portion 2021 is completely separated from the overlapping portion 2022, so that the edge of the resonance portion 2021 is completely exposed in the cavity, the effect of preventing shear wave leakage is the best. When the resonating part 2021 and the overlapping part 2022 have both mutually connected parts and mutually separated parts, the structural strength of the resonator can be improved. For other structural parts of this embodiment, refer to Embodiment 1, which will not be repeated here.
实施例Example
33
本发明实施例3提供了一种薄膜体声波谐振器，图3为本发明实施例3的薄膜体声波谐振器的结构示意图，本实施例与实施例1的区别在于：第一导电凸起301全部位于第一间隙211的边缘，与外周的第一介质层101相接触。第二导电凸起302一部分位于第二间隙221的边缘与第二介质层102接触，一部分位于第二间隙221中，与第二间隙221的边界设有距离。应该理解，导电凸起所在的位置是有效谐振区的边界，即有效谐振区的至少部分边界和间隙的部分边界重合。第一导电凸起和第一间隙的位置关系，以及第二导电凸起与第二间隙的位置关系可以有多种情况，如：第一导电凸起设置在第一间隙的边界处或，第一导电凸起与第一间隙的边界设有距离或，一部分第一导电凸起设置在第一间隙边界处，另一部分第一导电凸起与第一间隙的边界设有距离；和/或，第二导电凸起设置在第二间隙的边界处或，第二导电凸起与第二间隙的边界设有距离或，一部分第二导电凸起设置在第二间隙边界处，另一部分第二导电凸起与第二间隙的边界设有距离。也就是说，可以部分或全部第一导电凸起301位于第一间隙211的边缘，部分或全部第二导电凸起302位于第二间隙221的边缘。Embodiment 3 of the present invention provides a thin-film bulk acoustic resonator. FIG. 3 is a schematic structural diagram of the thin-film bulk acoustic resonator according to Embodiment 3 of the present invention. The difference between this embodiment and Embodiment 1 is that the first conductive protrusion 301 All of them are located at the edge of the first gap 211 and are in contact with the first dielectric layer 101 on the periphery. A part of the second conductive bump 302 is located at the edge of the second gap 221 in contact with the second dielectric layer 102 , and a part is located in the second gap 221 with a distance from the boundary of the second gap 221 . It should be understood that the position where the conductive protrusion is located is the boundary of the effective resonant region, that is, at least part of the boundary of the effective resonant region coincides with part of the boundary of the gap. The positional relationship between the first conductive bump and the first gap, and the positional relationship between the second conductive bump and the second gap can be in various situations, for example, the first conductive bump is arranged at the boundary of the first gap or the A conductive bump is set at a distance from the boundary of the first gap, a part of the first conductive bump is set at the boundary of the first gap, and another part of the first conductive bump is set at a distance from the boundary of the first gap; and/or, The second conductive bumps are arranged at the boundary of the second gap or, the second conductive bumps are set at a distance or from the boundary of the second gap, a part of the second conductive bumps are arranged at the boundary of the second gap, and the other part of the second conductive bumps A distance is provided between the protrusion and the boundary of the second gap. That is, some or all of the first conductive protrusions 301 may be located at the edge of the first gap 211 , and some or all of the second conductive protrusions 302 may be located at the edge of the second gap 221 .
以上实施例1至实施例3中，第一电极均位于承载衬底上、第二电极下方，但这些实施例中，也可以是第二电极均位于承载衬底上、第一电极下方。In the above Embodiments 1 to 3, the first electrodes are all located on the carrier substrate and below the second electrodes, but in these embodiments, the second electrodes may all be located on the carrier substrate and below the first electrodes.
本发明中形成 薄膜体声波谐振器的制造方法包括：步骤S1，形成第一结构，所述第一结构包括：第一电极、至少覆盖所述第一电极的第一牺牲层、至少在所述第一牺牲层侧面包围所述第一牺牲层的介质层；步骤S2，形成第一导电凸起，贯穿所述第一牺牲层、一端连接所述第一电极；步骤S3，形成第一电极引出部，一端连接所述第一导电凸起的另一端，另一端延伸出所述有效谐振区；步骤S4，形成压电层；步骤S5，形成第二结构，所述第二结构包括：第二电极、至少覆盖所述第二电极的第二牺牲层、至少在所述第二牺牲层侧面包围所述第二牺牲层的介质层；步骤S6，形成第二导电凸起，贯穿所述第二牺牲层、一端连接所述第二电极；步骤S7，形成第二电极引出部，一端连接所述第二导电凸起的另一端，另一端延伸出所述有效谐振区；步骤S8，去除所述第一牺牲层、第二牺牲层，形成所述第一间隙、第二间隙。
The manufacturing method for forming a thin film bulk acoustic wave resonator in the present invention includes: step S1, forming a first structure, and the first structure includes: a first electrode, a first sacrificial layer covering at least the first electrode, at least in the The side of the first sacrificial layer surrounds the dielectric layer of the first sacrificial layer; in step S2, a first conductive bump is formed, which penetrates the first sacrificial layer and is connected to the first electrode at one end; in step S3, a first electrode is formed to lead out one end is connected to the other end of the first conductive bump, and the other end extends out of the effective resonance region; step S4, forming a piezoelectric layer; step S5, forming a second structure, the second structure includes: a second structure. an electrode, a second sacrificial layer covering at least the second electrode, and a dielectric layer surrounding the second sacrificial layer at least on the side of the second sacrificial layer; step S6, forming a second conductive bump that penetrates the second sacrificial layer One end of the sacrificial layer is connected to the second electrode; step S7, a second electrode lead-out portion is formed, one end is connected to the other end of the second conductive bump, and the other end extends out of the effective resonance region; step S8, the The first sacrificial layer and the second sacrificial layer form the first gap and the second gap.
以上各个步骤之间的顺序可以依次进行，也可以不按照顺序依次进行。The sequence between the above steps may be performed sequentially, or may not be performed sequentially.
其中一个方案中：提供临时衬底；在所述临时衬底上依次执行步骤S1-S3；执行完步骤S3之后，在所述第一电极引出部所在侧键合承载衬底，去除所述临时衬底；然后，在所述承载衬底上依次执行步骤S5-S7。In one of the solutions: a temporary substrate is provided; steps S1-S3 are sequentially performed on the temporary substrate; after step S3 is performed, a carrier substrate is bonded on the side where the first electrode lead-out portion is located, and the temporary substrate is removed substrate; then, steps S5-S7 are sequentially performed on the carrier substrate.
其中，形成压电层的步骤S4：可以在1）执行步骤S1之前形成，也可以2）在执行步骤S3之后，执行步骤S4之前形成，压电层为有效谐振区和无效区均分布的膜层，也可以是经过图形化仅位于有效谐振区的膜层。具体可以参考以下实施例4中的详细描述。Wherein, the step S4 of forming the piezoelectric layer: it can be formed before 1) performing step S1, or 2) after performing step S3 and before performing step S4, the piezoelectric layer is a film in which the effective resonance region and the inactive region are evenly distributed It can also be a patterned film layer that is located only in the effective resonance region. For details, refer to the detailed description in Example 4 below.
另一个方案中：提供承载衬底；在所述承载衬底上先执行步骤S3形成所述第一电极引出部，之后执行步骤S1和S3；其中，步骤S1和步骤S3之间的各个结构的形成顺序可以是：形成所述第一牺牲层、所述第一介质层，之后形成所述第一导电凸起，接着形成第一电极。之后，执行步骤S5-S7，形成所述第二结构、第二导电凸起、第二电极引出部。In another solution: a carrier substrate is provided; step S3 is first performed on the carrier substrate to form the first electrode lead-out portion, and then steps S1 and S3 are performed; wherein, the respective structures between steps S1 and S3 are The forming sequence may be: forming the first sacrificial layer and the first dielectric layer, then forming the first conductive bump, and then forming the first electrode. After that, steps S5-S7 are performed to form the second structure, the second conductive bump, and the second electrode lead-out portion.
其中，形成压电层的步骤S4可以：1）在执行步骤S1的形成第一电极的过程中形成压电层，比如依次形成第一电极层和压电层和第二电极层，之后对三层结构执行图形化，形成位于有效谐振区的第一电极、压电层、第二电极，2）也可以在执行步骤S1之后，在第一电极的周围形成平坦层，其中平坦层的表面与第一电极的表面相平，之后形成压电层，该压电层位于有效谐振区和无效谐振区。具体可以参考以下实施例6中的详细描述。Wherein, the step S4 of forming the piezoelectric layer may: 1) The piezoelectric layer is formed during the process of forming the first electrode in step S1, for example, the first electrode layer, the piezoelectric layer and the second electrode layer are formed in sequence, and then the three The layer structure is patterned to form a first electrode, a piezoelectric layer, and a second electrode located in the effective resonance region. 2) After step S1 is performed, a flat layer can also be formed around the first electrode, wherein the surface of the flat layer is the same as that of the first electrode. The surface of the first electrode is flat, and then a piezoelectric layer is formed, and the piezoelectric layer is located in the effective resonance region and the ineffective resonance region. For details, reference may be made to the detailed description in Example 6 below.
再一个方案中：提供临时衬底；在所述临时衬底上依次执行步骤S1、S5、S6、S7形成所述第一结构、第二结构、第二导电凸起、第二电极引出部；在所述第二电极引出部所在侧键合承载衬底，之后去除所述临时衬底；键合所述承载衬底后，依次执行步骤S2、S3形成所述第一导电凸起、所述第一电极引出部。In yet another solution: a temporary substrate is provided; steps S1, S5, S6, and S7 are sequentially performed on the temporary substrate to form the first structure, the second structure, the second conductive bump, and the second electrode lead-out portion; The carrier substrate is bonded on the side where the second electrode lead-out portion is located, and then the temporary substrate is removed; after bonding the carrier substrate, steps S2 and S3 are sequentially performed to form the first conductive bump, the the first electrode lead-out part.
其中，形成压电层的步骤S4：可以在1）执行步骤S1之后形成，形成的压电层为在无效区和有效区均分布的膜层，也可以是仅在有效区分布的膜层；也可以2）在执行步骤S3之后，执行步骤S4之前形成，压电层为有效谐振区和无效区均分布的膜层，也可以是经过图形化仅位于有效谐振区的膜层。具体可以参考以下实施例5中的详细描述。Wherein, the step S4 of forming the piezoelectric layer: it can be formed after step S1 is performed in 1), and the formed piezoelectric layer is a film layer distributed in both the inactive area and the active area, or a film layer distributed only in the active area; Alternatively 2) after step S3 is performed and before step S4 is performed, the piezoelectric layer may be a film layer with both the effective resonance area and the ineffective area distributed, or may be a patterned film only located in the effective resonance area. For details, reference may be made to the detailed description in Example 5 below.
下面结合附图对各个实施例进行详细的说明：Each embodiment will be described in detail below in conjunction with the accompanying drawings:
实施例Example
44
图4至图13为本发明实施例4的一种薄膜体声波谐振器的制造方法中不同步骤对应的结构示意图，以下将参考图4至图13详细说明本实施例。4 to 13 are schematic structural diagrams corresponding to different steps in a method for manufacturing a thin film bulk acoustic resonator according to Embodiment 4 of the present invention, and the embodiment will be described in detail below with reference to FIGS. 4 to 13 .
参考图4-图9，提供临时衬底200，在所述临时衬底上形成第一结构、第一导电凸起、第一电极引出部。Referring to FIGS. 4-9 , a temporary substrate 200 is provided, on which a first structure, a first conductive bump, and a first electrode lead-out portion are formed.
具体地，参考图4，在所述临时衬底200上形成第二电极层203’、压电层202和第一电极层201’。Specifically, referring to FIG. 4 , a second electrode layer 203', a piezoelectric layer 202 and a first electrode layer 201' are formed on the temporary substrate 200.
临时衬底200的材料可以是以下所提到的材料中的至少一种：硅(Si)、锗(Ge)、锗硅 (SiGe)、碳硅(Si)、碳锗硅(SiGe)、砷化铟(Ins)、砷化镓(Gs)、磷化铟(InP)或者其它III/V化合物半导体。The material of the temporary substrate 200 may be at least one of the following mentioned materials: silicon (Si), germanium (Ge), silicon germanium (SiGe), silicon carbon (Si), silicon carbon germanium (SiGe), arsenic Indium (Ins), Gallium Arsenide (Gs), Indium Phosphide (InP) or other III/V compound semiconductors.
另外，为便于后续剥离临时衬底200，还可以在临时衬底200上形成隔离层，隔离层位于临时衬底200和第二电极层203’之间，在后续剥离工艺中，可以通过腐蚀隔离层的方式，使临时衬底200与后续形成的第二电极层203’分离，有助于快速剥离临时衬底，提高工艺制作效率，若临时衬底200与第二电极层203’之间未形成隔离层，则后续可通过机械研磨等方式去除临时衬底。隔离层的材质均包括但不限于二氧化硅(SiO2)、氮化硅 (Si3N4)、氧化铝（Al2O3）和氮化铝（AlN）中的至少一种。隔离层可通过化学气相沉积、磁控溅射或蒸镀等方式形成。In addition, in order to facilitate the subsequent peeling off of the temporary substrate 200, an isolation layer may also be formed on the temporary substrate 200, and the isolation layer is located between the temporary substrate 200 and the second electrode layer 203'. In the subsequent peeling process, the isolation layer may be isolated by etching. The temporary substrate 200 is separated from the second electrode layer 203 ′ formed later, which helps to peel off the temporary substrate quickly and improves the manufacturing efficiency of the process. After forming the isolation layer, the temporary substrate can be removed by mechanical grinding or the like. The materials of the isolation layers include but are not limited to at least one of silicon dioxide (SiO2), silicon nitride (Si3N4), aluminum oxide (Al2O3) and aluminum nitride (AlN). The isolation layer can be formed by chemical vapor deposition, magnetron sputtering, or evaporation.
首先在临时衬底200上沉积第二电极层203’，然后在第二电极层203’上沉积压电层202，最后在压电层202上沉积第一电极层201’。压电层202形成在平整的第二电极层203’上，可以使压电层202具有较好的晶格取向，提高压电层202的压电特性，进而提高谐振器的整体性能。First a second electrode layer 203' is deposited on the temporary substrate 200, then a piezoelectric layer 202 is deposited on the second electrode layer 203', and finally a first electrode layer 201' is deposited on the piezoelectric layer 202. The piezoelectric layer 202 is formed on the flat second electrode layer 203', which can make the piezoelectric layer 202 have a better lattice orientation, improve the piezoelectric properties of the piezoelectric layer 202, and further improve the overall performance of the resonator.
压电层202的材料参照前文结构实施例的描述。可以使用化学气相沉积、物理气相沉积或原子层沉积等本领域技术人员熟知的任何适合的方法沉积形成压电层202。第一电极层201’和第二电极层203’材料参照前文结构实施例关于第一电极和第二电极材料的介绍，可以通过磁控溅射、蒸镀等物理气相沉积或者化学气相沉积方法形成第一电极层201’或第二电极层203’。The material of the piezoelectric layer 202 refers to the description of the foregoing structural embodiments. The piezoelectric layer 202 may be deposited using any suitable method known to those skilled in the art, such as chemical vapor deposition, physical vapor deposition, or atomic layer deposition. The materials of the first electrode layer 201 ′ and the second electrode layer 203 ′ can be formed by physical vapor deposition or chemical vapor deposition methods such as magnetron sputtering, evaporation, etc. The first electrode layer 201' or the second electrode layer 203'.
参考图5，形成第一电极层201’之后，对第一电极层201’进行图形化，形成第一电极201，图形化第一电极层201’的方法可以利用刻蚀工艺刻蚀第一电极层201’，该刻蚀工艺可以是湿法刻蚀或者干法刻蚀工艺，其中较佳地使用干法刻蚀工艺，干法刻蚀包括但不限于反应离子刻蚀(RIE)、离子束刻蚀、等离子体刻蚀或者激光切割。本实施例中，第一电极201的边界位于后续形成的第一间隙内，第一电极201的形状为不规则多边形。Referring to FIG. 5 , after the first electrode layer 201 ′ is formed, the first electrode layer 201 ′ is patterned to form the first electrode 201 . The method of patterning the first electrode layer 201 ′ may use an etching process to etch the first electrode Layer 201 ′, the etching process can be wet etching or dry etching process, wherein preferably dry etching process is used, dry etching includes but not limited to reactive ion etching (RIE), ion beam Etching, plasma etching or laser cutting. In this embodiment, the boundary of the first electrode 201 is located in the first gap formed subsequently, and the shape of the first electrode 201 is an irregular polygon.
参考图6，形成第一牺牲层材料，覆盖第一电极201、压电层202。图形化第一牺牲材料，形成第一牺牲层210，第一牺牲层210至少覆盖在第一电极201。至少覆盖的意思为：第一牺牲层210的边界和第一电极的边界重合或第一牺牲层的边界位于第一电极的边界外。本实施例中，第一牺牲层还覆盖在第一电极201外周的压电层202上。第一牺牲层210在后续工艺中释放后形成第一间隙。第一牺牲层210的面积决定了第一间隙的面积，第一牺牲层210的高度决定了第一间隙的高度。第一牺牲层材料包括磷硅玻璃、低温二氧化硅、硼磷硅玻璃、锗、碳、聚酰亚胺或光阻剂，可以通过化学气相沉积的方法形成。Referring to FIG. 6 , a first sacrificial layer material is formed to cover the first electrode 201 and the piezoelectric layer 202 . The first sacrificial material is patterned to form a first sacrificial layer 210 , and the first sacrificial layer 210 covers at least the first electrode 201 . Covering at least means that the boundary of the first sacrificial layer 210 coincides with the boundary of the first electrode or the boundary of the first sacrificial layer is located outside the boundary of the first electrode. In this embodiment, the first sacrificial layer also covers the piezoelectric layer 202 on the periphery of the first electrode 201 . The first sacrificial layer 210 forms a first gap after being released in a subsequent process. The area of the first sacrificial layer 210 determines the area of the first gap, and the height of the first sacrificial layer 210 determines the height of the first gap. The material of the first sacrificial layer includes phosphosilicate glass, low temperature silicon dioxide, borophosphosilicate glass, germanium, carbon, polyimide or photoresist, and can be formed by chemical vapor deposition.
参考图7，形成至少在所述第一牺牲层侧面包围所述第一牺牲层的介质层101A（以下简称介质层101A），覆盖第一牺牲层210及第一牺牲层210外周的压电层202。介质层101A的材料可以为二氧化硅（SiO2）、氮化硅(Si3N4)、氧化铝（Al2O3）和氮化铝的一种或几种组合，可以通过物理气相沉积或化学气相沉积形成。介质层101A的表面也可以与牺牲层的表面相平。Referring to FIG. 7 , a dielectric layer 101A (hereinafter referred to as dielectric layer 101A) surrounding the first sacrificial layer at least on the side of the first sacrificial layer is formed, and a piezoelectric layer covering the first sacrificial layer 210 and the periphery of the first sacrificial layer 210 is formed 202. The material of the dielectric layer 101A may be one or several combinations of silicon dioxide (SiO2), silicon nitride (Si3N4), aluminum oxide (Al2O3) and aluminum nitride, and may be formed by physical vapor deposition or chemical vapor deposition. The surface of the dielectric layer 101A may also be level with the surface of the sacrificial layer.
参考图8，在第一电极201表面形成第一导电凸起301。具体为，形成第一通孔，贯穿第一牺牲层210和第一牺牲层210上方的介质层101A，在第一通孔中形成导电材料，以形成第一导电凸起301。可以通过刻蚀工艺或打孔工艺形成第一通孔。可以通过沉积或电镀的方法在第一通孔中形成导电材料，导电材料包括：金、银、钨、铂、铝、铜等低电阻率的材料。本实施例中，第一导电凸起301形成在有效谐振区的边缘处，其位置、结构和作用参照前文关于结构实施例的相关描述。Referring to FIG. 8 , first conductive bumps 301 are formed on the surface of the first electrode 201 . Specifically, a first through hole is formed to penetrate through the first sacrificial layer 210 and the dielectric layer 101A above the first sacrificial layer 210 , and a conductive material is formed in the first through hole to form the first conductive bump 301 . The first through holes may be formed through an etching process or a punching process. A conductive material may be formed in the first through hole by deposition or electroplating, and the conductive material includes low resistivity materials such as gold, silver, tungsten, platinum, aluminum, and copper. In this embodiment, the first conductive protrusion 301 is formed at the edge of the effective resonance region, and the position, structure and function of the first conductive protrusion 301 can be referred to the related description of the structure embodiment above.
参考图9，在第一牺牲层上方的介质层101A形成释放孔212，通过释放孔212去除第一牺牲层。为将第一牺牲层释放干净，释放孔的数量可以为多个，分布于第一牺牲层上方的不同区域。根据选择的第一牺牲层材料，采用相对应的去除方法，比如当第一牺牲层材料为聚酰亚胺或光阻剂时，采用灰化的方法去除，灰化的方法具体为在250摄氏度的温度下，通过释放孔212的氧与第一牺牲层材料发生化学反应，生成气体物质挥发掉，当第一牺牲层材料为低温二氧化硅时，用氢氟酸溶剂和低温二氧化硅发生反应去除。去除第一牺牲层后，在第一电极201的表面和介质层101A之间形成第一间隙211。Referring to FIG. 9 , release holes 212 are formed in the dielectric layer 101A above the first sacrificial layer, and the first sacrificial layer is removed through the release holes 212 . In order to release the first sacrificial layer cleanly, the number of release holes may be multiple and distributed in different regions above the first sacrificial layer. According to the selected material of the first sacrificial layer, a corresponding removal method is adopted. For example, when the material of the first sacrificial layer is polyimide or photoresist, it is removed by ashing method. The ashing method is specifically at 250 degrees Celsius. At the same temperature, the oxygen in the release hole 212 chemically reacts with the material of the first sacrificial layer, and the generated gaseous substances are volatilized. Reaction removed. After removing the first sacrificial layer, a first gap 211 is formed between the surface of the first electrode 201 and the dielectric layer 101A.
去除第一牺牲层后，形成第一电极引出部，包括：形成第一钝化层；刻蚀所述第一钝化层形成第一凹槽；在所述第一凹槽中形成第一导电层，作为所述第一电极引出部；或者，形成第一导电层，图形化所述第一导电层形成所述第一电极引出部；形成第一钝化层，覆盖所述第一电极引出部；所述第一介质层包括所述第一钝化层。先形成第一钝化层后形成第一电极引出部时，第一钝化层和第一电极引出部的表面齐平，之后可以在该齐平的表面上再形成介质层，方便后续承载衬底的键合；先形成第一电极引出部后形成第一钝化层时，第一钝化层和第一电极引出部的表面齐平或覆盖第一电极引出部，如果齐平，在该齐平的表面上再形成介质层，方便后续承载衬底的键合。After removing the first sacrificial layer, forming a first electrode lead-out part includes: forming a first passivation layer; etching the first passivation layer to form a first groove; forming a first conductive groove in the first groove layer as the first electrode lead-out portion; or, forming a first conductive layer, patterning the first conductive layer to form the first electrode lead-out portion; forming a first passivation layer to cover the first electrode lead-out portion part; the first dielectric layer includes the first passivation layer. When the first passivation layer is formed first and then the first electrode lead-out portion is formed, the surfaces of the first passivation layer and the first electrode lead-out portion are flush, and then a dielectric layer can be formed on the flush surface to facilitate subsequent bearing linings Bottom bonding; when the first electrode lead-out portion is formed first and then the first passivation layer is formed, the surfaces of the first passivation layer and the first electrode lead-out portion are flush or cover the first electrode lead-out portion. A dielectric layer is formed on the flush surface to facilitate subsequent bonding of the carrier substrate.
所述第一电极引出部303延伸出所述第一间隙211所在的区域，本实施例中，第一电极引出部303为条形，从第一间隙211所在侧向外侧引出。在另一实施例中，第一电极引出部303为面状，应当理解，第一电极引出部303的作用为连接外部信号，起到电连接的作用，其形状、面积可根据情况灵活选择。The first electrode lead-out portion 303 extends out of the area where the first gap 211 is located. In this embodiment, the first electrode lead-out portion 303 is strip-shaped and leads out from the side where the first gap 211 is located. In another embodiment, the first electrode lead-out portion 303 is planar. It should be understood that the function of the first electrode lead-out portion 303 is to connect external signals and play the role of electrical connection, and its shape and area can be flexibly selected according to the situation.
参考图10，本实施例中，还包括在第一钝化层101B的上表面形成承载衬底100。可以通过键合的方式将承载衬底100键合在第一钝化层101B上。键合层的材料包括氧化硅、氮化硅、氮氧化硅、碳氮化硅或硅酸乙酯。埋设第一电极引出部303的第一介质层包括：围成第一间隙211的介质层101A和第一钝化层101B。Referring to FIG. 10 , in this embodiment, the method further includes forming a carrier substrate 100 on the upper surface of the first passivation layer 101B. The carrier substrate 100 may be bonded on the first passivation layer 101B by means of bonding. The material of the bonding layer includes silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride or ethyl silicate. The first dielectric layer burying the first electrode lead-out portion 303 includes: a dielectric layer 101A and a first passivation layer 101B surrounding the first gap 211 .
参考图11-图14，去除临时衬底。在所述承载衬底上依次形成所述第二结构、第二导电凸起、第二电极引出部。具体如下：参考图11，去除临时衬底，当临时衬底上形成有隔离层时，可以通过腐蚀隔离层的方式去除临时衬底，若临时衬底与第二电极层203’之间未形成隔离层，则可通过机械研磨等方式去除临时衬底。Referring to Figures 11-14, the temporary substrate is removed. The second structure, the second conductive bump, and the second electrode lead-out portion are sequentially formed on the carrier substrate. The details are as follows: Referring to FIG. 11, the temporary substrate is removed. When an isolation layer is formed on the temporary substrate, the temporary substrate can be removed by etching the isolation layer. If there is no formation between the temporary substrate and the second electrode layer 203' isolation layer, the temporary substrate can be removed by mechanical grinding or the like.
参考图12，图形化第二电极层形成第二电极203，本实施例中，第二电极203与第一电极201的形状、大小一致，对称设置。在其他实施例中，第二电极的形状和第一电极的形状可以不一致。可选方案中，第二电极203的边缘位于第一间隙211围成的区域上方。本实施例中，第二电极203的边缘也位于后续工艺中，形成的第二间隙围成的区域内。Referring to FIG. 12 , the second electrode 203 is formed by patterning the second electrode layer. In this embodiment, the second electrode 203 and the first electrode 201 have the same shape and size, and are symmetrically arranged. In other embodiments, the shape of the second electrode and the shape of the first electrode may not be identical. In an alternative solution, the edge of the second electrode 203 is located above the area enclosed by the first gap 211 . In this embodiment, the edge of the second electrode 203 is also located in the area enclosed by the second gap formed in the subsequent process.
参考图13，形成第二牺牲层材料，覆盖第二电极203、压电层202。图形化第二牺牲材料，形成第二牺牲层220，第一牺牲层220至少覆盖在第二电极203。至少覆盖的意思为：第二牺牲层210的边界和第二电极203的边界重合或第二牺牲层210的边界位于第二电极203的边界外。本实施例中，第二牺牲层220还覆盖在第二电极203外周的压电层202上。第二牺牲层220在后续工艺中释放后形成第二间隙。第二牺牲层材料和形成方法参考第一牺牲层材料和形成方法。Referring to FIG. 13 , a second sacrificial layer material is formed to cover the second electrode 203 and the piezoelectric layer 202 . The second sacrificial material is patterned to form a second sacrificial layer 220 , and the first sacrificial layer 220 covers at least the second electrode 203 . Covering at least means that the boundary of the second sacrificial layer 210 coincides with the boundary of the second electrode 203 or the boundary of the second sacrificial layer 210 is located outside the boundary of the second electrode 203 . In this embodiment, the second sacrificial layer 220 also covers the piezoelectric layer 202 on the periphery of the second electrode 203 . The second sacrificial layer 220 forms a second gap after being released in a subsequent process. The material and formation method of the second sacrificial layer refer to the material and formation method of the first sacrificial layer.
形成第二牺牲层220后，形成至少在所述第二牺牲层侧面包围所述第二牺牲层的介质层102A（以下简称介质层102A），覆盖第二牺牲层220及第二牺牲层外周的压电层202。介质层102A的材料和形成方法参照介质层101A材料和形成方法。图示实施例显示介质层102A覆盖第二牺牲层220顶面，但本发明不限于此，也可以是介质层102A仅位于第二牺牲层220的周围，顶面没有介质层102A。After the second sacrificial layer 220 is formed, a dielectric layer 102A (hereinafter referred to as the dielectric layer 102A) surrounding the second sacrificial layer at least on the side of the second sacrificial layer is formed, covering the second sacrificial layer 220 and the outer periphery of the second sacrificial layer. Piezoelectric layer 202 . For the material and formation method of the dielectric layer 102A, refer to the material and formation method of the dielectric layer 101A. The illustrated embodiment shows that the dielectric layer 102A covers the top surface of the second sacrificial layer 220 , but the invention is not limited thereto, and the dielectric layer 102A may only be located around the second sacrificial layer 220 without the dielectric layer 102A on the top surface.
形成介质层102A后，形成第二导电凸起302，一端连接第二电极，另一端从第二电极上方的膜层露出。第二导电凸起302的材料和形成方法参照第一导电凸起的材料和形成方法，此处不再赘述。第二导电凸起302的位置，结构和作用，以及第二导电凸起和第一导电凸起的位置关系等参照前文结构实施例的相关描述。After the dielectric layer 102A is formed, a second conductive bump 302 is formed, one end of which is connected to the second electrode, and the other end is exposed from the film layer above the second electrode. For the material and formation method of the second conductive bump 302, reference may be made to the material and formation method of the first conductive bump, and details are not described herein again. The position, structure and function of the second conductive bumps 302 , and the positional relationship between the second conductive bumps and the first conductive bumps, etc., refer to the related descriptions of the foregoing structural embodiments.
参考图14，在第二牺牲层上方的介质层102A形成释放孔，通过释放孔去除第二牺牲层，以在第二电极203的上表面和第一层第二介质层102A之间形成第二间隙221。Referring to FIG. 14 , release holes are formed in the dielectric layer 102A above the second sacrificial layer, and the second sacrificial layer is removed through the release holes to form a second layer between the upper surface of the second electrode 203 and the first layer of the second dielectric layer 102A Gap 221.
去除第二牺牲层后，形成第二电极引出部304，第二电极引出部304和第二导电凸起302电连接。第二电极引出部304包括：形成第二钝化层102B；刻蚀所述第二钝化层形成第二凹槽；在所述第二凹槽中形成第二导电层，作为所述第二电极引出部；或者，形成第二导电层，图形化所述第二导电层形成所述第二电极引出部；形成第二钝化层，覆盖所述第二电极引出部；所述第二介质层102包括所述第二钝化层102B和围成第二间隙221的介质层102A。先形成第二钝化层102B后形成第二电极引出部时，第二钝化层和第二电极引出部的表面齐平，之后可以在该齐平的表面上再形成介质层，起到保护第二电极引出部的作用；先形成第二电极引出部后形成第二钝化层时，第二钝化层和第二电极引出部的表面齐平或覆盖第二电极引出部（图14显示覆盖的情形），如果未覆盖，需要再形成覆盖第二电极引出部的介质层，起到保护第二电极引出部的作用。After the second sacrificial layer is removed, a second electrode lead-out portion 304 is formed, and the second electrode lead-out portion 304 is electrically connected to the second conductive bump 302 . The second electrode lead-out portion 304 includes: forming a second passivation layer 102B; etching the second passivation layer to form a second groove; forming a second conductive layer in the second groove as the second electrode lead-out portion; or, forming a second conductive layer, patterning the second conductive layer to form the second electrode lead-out portion; forming a second passivation layer to cover the second electrode lead-out portion; the second medium The layer 102 includes the second passivation layer 102B and the dielectric layer 102A surrounding the second gap 221 . When the second passivation layer 102B is formed first and then the second electrode lead-out portion is formed, the surfaces of the second passivation layer and the second electrode lead-out portion are flush, and then a dielectric layer can be formed on the flush surface for protection The role of the second electrode lead-out portion; when the second electrode lead-out portion is formed first and then the second passivation layer is formed, the surfaces of the second passivation layer and the second electrode lead-out portion are flush or cover the second electrode lead-out portion (Fig. 14 shows If it is not covered, a dielectric layer covering the lead-out portion of the second electrode needs to be formed to protect the lead-out portion of the second electrode.
第二电极引出部304的材料参照第一电极引出部303的材料。第二电极引出部304延伸出所述第二间隙221所在的区域，本实施例中，第二电极引出部304为条形，从第二间隙211所在侧向外侧引出，在有效谐振区外部，第一电极引出部303和第二电极引出部304在压电层202方向上的投影相互错开。The material of the second electrode lead-out portion 304 refers to the material of the first electrode lead-out portion 303 . The second electrode lead-out portion 304 extends out of the area where the second gap 221 is located. In this embodiment, the second electrode lead-out portion 304 is strip-shaped, and leads out from the side where the second gap 211 is located to the outside, outside the effective resonance area, The projections of the first electrode lead-out portion 303 and the second electrode lead-out portion 304 in the direction of the piezoelectric layer 202 are offset from each other.
本发明中，也可以在形成第二电极引出部之后，形成释放孔去除第二牺牲层。In the present invention, after forming the second electrode lead-out portion, a release hole may be formed to remove the second sacrificial layer.
实施例Example
44
的变形例一Variation 1
实施例4中，在临时衬底上依次形成第二电极层、压电层、第一电极层；之后，图形化所述第一电极层，形成所述第一电极；形成第一结构后，键合承载衬底去除临时衬底后，图形化所述第二电极层形成第二电极；之后形成第二结构、第二电极引出部、第二导电凸起。在刻蚀形成第一电极或第二电极时，压电层始终未被刻蚀，保留压电层的完整性，保持在有效区和无效区均分布有压电层，所述第一间隙和所述第二间隙通过所述压电层相互隔开，因此，第一牺牲层和第二牺牲层相互之间不连通，需要分别去除。In Embodiment 4, a second electrode layer, a piezoelectric layer, and a first electrode layer are sequentially formed on the temporary substrate; after that, the first electrode layer is patterned to form the first electrode; after the first structure is formed, After bonding the carrier substrate to remove the temporary substrate, the second electrode layer is patterned to form a second electrode; and then a second structure, a second electrode lead-out portion, and a second conductive bump are formed. When the first electrode or the second electrode is formed by etching, the piezoelectric layer is not etched all the time, the integrity of the piezoelectric layer is preserved, and the piezoelectric layer is distributed in both the active area and the inactive area. The first gap and The second gap is separated from each other by the piezoelectric layer. Therefore, the first sacrificial layer and the second sacrificial layer are not connected to each other and need to be removed respectively.
在变形例一中，可以在形成第一电极后，或形成第二电极后，图形化所述压电层，以去除无效区的压电层或者在有效谐振区的压电层周边形成空气边隙。关于该种情形的优点请参照结构实施例中相应部分的阐述。In Modification 1, after forming the first electrode or after forming the second electrode, the piezoelectric layer can be patterned to remove the piezoelectric layer in the inactive region or form an air edge around the piezoelectric layer in the effective resonance region gap. For the advantages of this kind of situation, please refer to the description of the corresponding part in the structural embodiment.
相应的，本变形例一中，形成第二牺牲层后，第一牺牲层依然存在，第二牺牲层也填充在图形化后的压电层的周边，此时所述第一牺牲层、所述第二牺牲层相互连通，可以同时去除所述第一牺牲层、第二牺牲层。Correspondingly, in this modification example 1, after the second sacrificial layer is formed, the first sacrificial layer still exists, and the second sacrificial layer is also filled around the patterned piezoelectric layer. The second sacrificial layers are communicated with each other, and the first sacrificial layer and the second sacrificial layer can be removed simultaneously.
实施例Example
44
的变形例二Variation 2 of
在临时衬底上依次形成第二电极层、压电层、第一电极层后，图形化所述第一电极层、压电层、第二电极层，去除位于无效区的第一电极层部分、压电层部分、第二电极层部分，以形成所述第一电极、第二电极、压电层；之后，形成所述第一牺牲层、第一介质层，所述第一牺牲层覆盖所述第一电极、第二电极、压电层的顶面和侧面。接着，参考实施例4的方法，形成第一导电凸起、第一电极引出部；然后，键合承载衬底、去除临时衬底，形成第二牺牲层、第二导电凸起、第二电极引出部等。After forming the second electrode layer, piezoelectric layer and first electrode layer in sequence on the temporary substrate, pattern the first electrode layer, piezoelectric layer and second electrode layer, and remove the part of the first electrode layer located in the inactive area , a piezoelectric layer part, a second electrode layer part to form the first electrode, the second electrode, and the piezoelectric layer; then, the first sacrificial layer and the first dielectric layer are formed, and the first sacrificial layer covers The first electrode, the second electrode, the top surface and the side surface of the piezoelectric layer. Next, referring to the method of Embodiment 4, a first conductive bump and a first electrode lead-out portion are formed; then, the carrier substrate is bonded, the temporary substrate is removed, and a second sacrificial layer, a second conductive bump, and a second electrode are formed The lead-out department, etc.
该变形例二形成的结构可以参考图29。Refer to FIG. 29 for the structure formed by the second modification.
该变形例二中，第一牺牲层、所述第二牺牲层相互连通，可以同时去除所述第一牺牲层、第二牺牲层。In the second modification, the first sacrificial layer and the second sacrificial layer are communicated with each other, and the first sacrificial layer and the second sacrificial layer can be removed simultaneously.
实施例Example
44
的变形例三Variation 3
在该变形例三中，在临时衬底上依次形成压电层、第一电极层；图形化所述第一电极层，形成所述第一电极。之后，参考实施例4的方法，形成所述第一牺牲层、第一介质层，所述第一牺牲层覆盖所述第一电极的顶面和侧面；然后形成第一导电凸起、第一电极引出部；继续参考实施例的方法，去除临时衬底、键合承载衬底，并翻转后，形成第二电极层，图形化所述第二电极层形成所述第二电极。然后，继续参考实施例4的方法，形成第二导电凸起、第二电极引出部、第二牺牲层、第二介质层等。In the third modification, the piezoelectric layer and the first electrode layer are sequentially formed on the temporary substrate; the first electrode layer is patterned to form the first electrode. Then, referring to the method of Embodiment 4, the first sacrificial layer and the first dielectric layer are formed, and the first sacrificial layer covers the top surface and the side surface of the first electrode; Electrode lead-out part; continue referring to the method of the embodiment, remove the temporary substrate, bond the carrier substrate, and turn it over to form a second electrode layer, and pattern the second electrode layer to form the second electrode. Then, continuing to refer to the method of Embodiment 4, a second conductive bump, a second electrode lead-out portion, a second sacrificial layer, a second dielectric layer, and the like are formed.
在该变形例三中，压电层可以保持在无效区和有效谐振区均分布有，此时，由于第一牺牲层和第二牺牲层相互隔开，第一牺牲层和第二牺牲层需要分别去除。In the third modification, the piezoelectric layers can be kept distributed in both the inactive region and the effective resonance region. At this time, since the first sacrificial layer and the second sacrificial layer are separated from each other, the first sacrificial layer and the second sacrificial layer need to removed separately.
在该变形例三中，也可以是，在形成所述第一电极之后或者形成所述第二电极之后，图形化所述压电层，以去除无效区的压电层或者在有效谐振区的压电层周边形成空气边隙。在该情形下，形成第二牺牲层后，第一牺牲层依然存在，第二牺牲层也填充在图形化后的压电层的周边，此时所述第一牺牲层、所述第二牺牲层相互连通，可以同时去除所述第一牺牲层、第二牺牲层。In the third modification, after the first electrode is formed or the second electrode is formed, the piezoelectric layer may be patterned to remove the piezoelectric layer in the inactive region or the piezoelectric layer in the effective resonance region. An air gap is formed around the piezoelectric layer. In this case, after the second sacrificial layer is formed, the first sacrificial layer still exists, and the second sacrificial layer is also filled around the patterned piezoelectric layer. At this time, the first sacrificial layer and the second sacrificial layer are The layers are connected with each other, and the first sacrificial layer and the second sacrificial layer can be removed at the same time.
实施例Example
44
的变形例四Variation Four
在变形例四中，并没有在临时衬底上依次形成第二电极层、压电层、第一电极层。该实施例中，在临时衬底上形成第一电极和平坦层，所述第一电极和所述平坦层表面齐平；之后，参考实施例4的方法，形成第一牺牲层、第一介质层、第一导电凸起、第一电极引出部。In Modification 4, the second electrode layer, the piezoelectric layer, and the first electrode layer are not sequentially formed on the temporary substrate. In this embodiment, a first electrode and a flat layer are formed on the temporary substrate, and the surfaces of the first electrode and the flat layer are flush; after that, referring to the method of Embodiment 4, a first sacrificial layer and a first dielectric are formed layer, a first conductive bump, and a first electrode lead-out portion.
然后，键合承载衬底、去除临时衬底，在承载衬底上的第一电极和平坦层的齐平表面上形成压电层。Then, the carrier substrate is bonded, the temporary substrate is removed, and a piezoelectric layer is formed on the flush surface of the first electrode and the flat layer on the carrier substrate.
接着，参考实施例4的方法，在所述压电层上形成第二电极层；图形化所述第二电极层形成第二电极；以及形成第二介质层、第二牺牲层、第二导电凸起、第二电极引出部。Next, referring to the method of Embodiment 4, forming a second electrode layer on the piezoelectric layer; patterning the second electrode layer to form a second electrode; and forming a second dielectric layer, a second sacrificial layer, and a second conductive layer The protrusion and the second electrode lead-out portion.
在该变形例四中，压电层可以压电层位于有效谐振区和无效区，此时第一牺牲层和第二牺牲层相互隔开，需要分别去除。In this modification example 4, the piezoelectric layer may be located in the effective resonance region and the inactive region. In this case, the first sacrificial layer and the second sacrificial layer are separated from each other and need to be removed respectively.
在该变形例四中，也可以在图形化所述第二电极层之前或者之后，图形化所述压电层，以去除无效区的压电层或者在有效谐振区的压电层周边形成空气边隙。在该情形下，形成第二牺牲层后，第一牺牲层依然存在，第二牺牲层也填充在图形化后的压电层的周边，此时所述第一牺牲层、所述第二牺牲层相互连通，可以同时去除所述第一牺牲层、第二牺牲层。In the fourth modification, the piezoelectric layer may be patterned before or after the second electrode layer is patterned to remove the piezoelectric layer in the inactive region or form air around the piezoelectric layer in the effective resonance region side gap. In this case, after the second sacrificial layer is formed, the first sacrificial layer still exists, and the second sacrificial layer is also filled around the patterned piezoelectric layer. At this time, the first sacrificial layer and the second sacrificial layer are The layers are connected with each other, and the first sacrificial layer and the second sacrificial layer can be removed at the same time.
实施例Example
55
本实施例中，相对于承载衬底，第一电极位于第二电极下方。实施例4中，第一电极位于第二电极上方。In this embodiment, with respect to the carrier substrate, the first electrode is located below the second electrode. In Embodiment 4, the first electrode is located above the second electrode.
本发明实施例5提供了一种薄膜体声波谐振器的制造方法，图15至图21为本发明实施例5的一种薄膜体声波谐振器的制造方法中不同步骤对应的结构示意图，以下将参考图15至图21详细说明本实施例。Embodiment 5 of the present invention provides a method for manufacturing a thin-film bulk acoustic resonator. FIGS. 15 to 21 are schematic structural diagrams corresponding to different steps in a method for manufacturing a thin-film bulk acoustic resonator according to Embodiment 5 of the present invention. The present embodiment will be described in detail with reference to FIGS. 15 to 21 .
参考图15，提供临时衬底200；临时衬底200的材料可以参照实施例4的相关内容。Referring to FIG. 15 , a temporary substrate 200 is provided; the material of the temporary substrate 200 may refer to the related content of Embodiment 4.
参考图15和图16，在所述临时衬底200上形成所述第一结构。包括：先形成第一牺牲层210和包围第一牺牲层的介质层101A，之后形成第一电极201，所述第一牺牲层仅覆盖所述第一电极顶面（靠近临时衬底的面）或覆盖所述第一电极顶面及侧面。Referring to FIGS. 15 and 16 , the first structure is formed on the temporary substrate 200 . It includes: firstly forming a first sacrificial layer 210 and a dielectric layer 101A surrounding the first sacrificial layer, and then forming a first electrode 201, the first sacrificial layer only covers the top surface of the first electrode (the surface close to the temporary substrate) Or cover the top surface and side surface of the first electrode.
其中，介质层101A，覆盖所述第一牺牲层的侧面及第一电极的侧面或覆盖所述第一牺牲层的侧面、顶面及第一电极的侧面。The dielectric layer 101A covers the side surfaces of the first sacrificial layer and the side surfaces of the first electrode or covers the side surfaces, the top surface and the side surfaces of the first electrode of the first sacrificial layer.
具体的形成第一电极的方法包括：参考图16，对第一牺牲层进行刻蚀形成凹槽，在凹槽中填充导电材料作为第一电极，如果导电材料形成在凹槽外，需要去除凹槽外部的导电材料，可以通过化学机械研磨或刻蚀的方式去除。The specific method for forming the first electrode includes: referring to FIG. 16 , etching the first sacrificial layer to form a groove, and filling the groove with a conductive material as the first electrode. If the conductive material is formed outside the groove, the groove needs to be removed. The conductive material outside the groove can be removed by chemical mechanical grinding or etching.
形成第一电极的变形方式，也可以为：在第一牺牲层210和介质层101A的表面形成第一电极层，之后图形化第一电极层形成第一电极201。此时，第一电极位于第一牺牲层上而非嵌入在第一牺牲层。A variant of forming the first electrode may also be: forming a first electrode layer on the surfaces of the first sacrificial layer 210 and the dielectric layer 101A, and then patterning the first electrode layer to form the first electrode 201 . At this time, the first electrode is located on the first sacrificial layer instead of being embedded in the first sacrificial layer.
其中，形成第一牺牲层210和介质层101A的方法可以参考实施例4。The method for forming the first sacrificial layer 210 and the dielectric layer 101A may refer to Embodiment 4.
参考图17，形成第一结构后，在所述临时衬底上形成压电层202。具体形成方法可以参考实施例4中形成压电层的相关内容。Referring to Figure 17, after forming the first structure, a piezoelectric layer 202 is formed on the temporary substrate. For the specific formation method, reference may be made to the related content of forming the piezoelectric layer in Embodiment 4.
参考图17和图18，形成压电层后，在所述临时衬底上形成第二结构。具体方法包括：形成第二电极层，对第二电极层进行图形化形成第二电极203；之后形成第二牺牲层220和包围第二牺牲层220的介质层102A。实施例4中的相关内容可以援引于此。17 and 18, after forming the piezoelectric layer, a second structure is formed on the temporary substrate. The specific method includes: forming a second electrode layer, patterning the second electrode layer to form a second electrode 203 ; and then forming a second sacrificial layer 220 and a dielectric layer 102A surrounding the second sacrificial layer 220 . The relevant content in Embodiment 4 can be cited here.
参考图19和图20，形成第二结构后，在所述临时衬底200上形成第二导电凸起302、第二电极引出部304；去除所述第一牺牲层。形成第二电极引出部304的过程中，也形成了第二钝化层102B。实施例4中的相关内容可以援引于此。第二介质层102包括介质层102A和第二钝化层102B。Referring to FIGS. 19 and 20 , after the second structure is formed, a second conductive bump 302 and a second electrode lead-out portion 304 are formed on the temporary substrate 200 ; the first sacrificial layer is removed. During the process of forming the second electrode lead-out portion 304, the second passivation layer 102B is also formed. The relevant content in Embodiment 4 can be cited here. The second dielectric layer 102 includes a dielectric layer 102A and a second passivation layer 102B.
参考图21，在所述第二电极引出部304所在侧键合承载衬底100，之后去除所述临时衬底；键合所述承载衬底后，依次形成所述第一导电凸起301、所述第一电极引出部303。形成第一电极引出部303的过程中，也形成了第一钝化层101B。实施例4中的相关内容可以援引于此。第一介质层101包括介质层101A和第二钝化层101B。Referring to FIG. 21 , the carrier substrate 100 is bonded on the side where the second electrode lead-out portion 304 is located, and then the temporary substrate is removed; after bonding the carrier substrate, the first conductive bumps 301 and 301 are formed in sequence. The first electrode lead-out portion 303 . During the process of forming the first electrode lead-out portion 303, the first passivation layer 101B is also formed. The relevant content in Embodiment 4 can be cited here. The first dielectric layer 101 includes a dielectric layer 101A and a second passivation layer 101B.
实施例4中去除第一牺牲层、第二牺牲层的方法可以援引于实施例5中。The method of removing the first sacrificial layer and the second sacrificial layer in the fourth embodiment can be cited in the fifth embodiment.
实施例Example
55
的变形例一Variation 1
实施例5中，第一电极形成之后，形成压电层，之后形成第二电极，其中形成第一电极层、压电层、第二电极层并非按照顺序。依次进行压电层始终未被刻蚀，保留压电层的完整性，保持在有效区和无效区均分布有压电层，所述第一间隙和所述第二间隙通过所述压电层相互隔开，因此，第一牺牲层和第二牺牲层相互之间不连通，需要分别去除。In Example 5, after the first electrode is formed, the piezoelectric layer is formed, and then the second electrode is formed, wherein the formation of the first electrode layer, the piezoelectric layer, and the second electrode layer is not in order. The piezoelectric layer is not etched in sequence, the integrity of the piezoelectric layer is preserved, and the piezoelectric layer is distributed in both the active area and the inactive area, and the first gap and the second gap pass through the piezoelectric layer They are separated from each other, therefore, the first sacrificial layer and the second sacrificial layer are not connected to each other and need to be removed separately.
在变形例一中，可以在形成第二电极后或形成压电层后，图形化所述压电层，以去除无效区的压电层或者在有效谐振区的压电层周边形成空气边隙。关于该种情形的优点请参照结构实施例中相应部分的阐述。In Modification 1, after the second electrode is formed or the piezoelectric layer is formed, the piezoelectric layer may be patterned to remove the piezoelectric layer in the inactive region or form an air gap around the piezoelectric layer in the effective resonance region . For the advantages of this kind of situation, please refer to the description of the corresponding part in the structural embodiment.
相应的，本变形例一中，形成第二牺牲层后，第一牺牲层依然存在，第二牺牲层也填充在图形化后的压电层的周边，此时所述第一牺牲层、所述第二牺牲层相互连通，可以同时去除所述第一牺牲层、第二牺牲层。Correspondingly, in this modification example 1, after the second sacrificial layer is formed, the first sacrificial layer still exists, and the second sacrificial layer is also filled around the patterned piezoelectric layer. The second sacrificial layers are communicated with each other, and the first sacrificial layer and the second sacrificial layer can be removed simultaneously.
实施例Example
55
的变形例二Variation 2 of
在临时衬底上形成第一牺牲层和第一介质层后，在临时衬底上依次形成第二电极层、压电层、第一电极层后，图形化所述第一电极层、压电层、第二电极层，去除位于无效区的第一电极层部分、压电层部分、第二电极层部分，以形成所述第一电极、第二电极、压电层；之后，形成所述第二牺牲层、第二介质层，所述第二牺牲层覆盖所述第一电极、第二电极、压电层的顶面和侧面。接着，参考实施例4的方法，形成第二导电凸起、第二电极引出部；然后，键合承载衬底、去除临时衬底，第一导电凸起、第一电极引出部等。After the first sacrificial layer and the first dielectric layer are formed on the temporary substrate, the second electrode layer, the piezoelectric layer and the first electrode layer are sequentially formed on the temporary substrate, and then the first electrode layer, the piezoelectric layer and the piezoelectric layer are patterned. layer, the second electrode layer, the first electrode layer part, the piezoelectric layer part, and the second electrode layer part located in the invalid area are removed to form the first electrode, the second electrode, and the piezoelectric layer; A second sacrificial layer and a second dielectric layer, and the second sacrificial layer covers the top and side surfaces of the first electrode, the second electrode, and the piezoelectric layer. Next, referring to the method of Embodiment 4, the second conductive bumps, the second electrode lead-out portions are formed; then, the carrier substrate is bonded, the temporary substrate, the first conductive bumps, the first electrode lead-out portions, and the like are removed.
该变形例二形成的结构可以参考图29。Refer to FIG. 29 for the structure formed by the second modification.
该变形例二中，第一牺牲层、所述第二牺牲层相互连通，可以同时去除所述第一牺牲层、第二牺牲层。In the second modification, the first sacrificial layer and the second sacrificial layer are communicated with each other, and the first sacrificial layer and the second sacrificial layer can be removed simultaneously.
实施例Example
55
的变形例三Variation 3
在变形例三中，在临时衬底上形成第一介质层和第一牺牲层后，在临时衬底上形成第一电极和平坦层，所述第一电极和所述平坦层表面齐平；之后，参考实施例5的方法，形成压电层。之后的各个结构的形成步骤以及方法参考实施例5。In the third modification, after the first dielectric layer and the first sacrificial layer are formed on the temporary substrate, a first electrode and a flat layer are formed on the temporary substrate, and the surfaces of the first electrode and the flat layer are flush; After that, referring to the method of Example 5, a piezoelectric layer was formed. For the formation steps and methods of the subsequent structures, refer to Example 5.
在该变形例三中，压电层可以压电层位于有效谐振区和无效区，此时第一牺牲层和第二牺牲层相互隔开，需要分别去除。In the third modification, the piezoelectric layer may be located in the effective resonance region and the inactive region. In this case, the first sacrificial layer and the second sacrificial layer are separated from each other and need to be removed respectively.
在该变形例三中，也可以在图形化所述第二电极层之前或者之后，图形化所述压电层，以去除无效区的压电层或者在有效谐振区的压电层周边形成空气边隙。在该情形下，形成第二牺牲层后，第一牺牲层依然存在，第二牺牲层也填充在图形化后的压电层的周边，此时所述第一牺牲层、所述第二牺牲层相互连通，可以同时去除所述第一牺牲层、第二牺牲层。In the third modification, the piezoelectric layer may also be patterned before or after the second electrode layer is patterned to remove the piezoelectric layer in the inactive region or form air around the piezoelectric layer in the effective resonance region side gap. In this case, after the second sacrificial layer is formed, the first sacrificial layer still exists, and the second sacrificial layer is also filled around the patterned piezoelectric layer. At this time, the first sacrificial layer and the second sacrificial layer are The layers are connected with each other, and the first sacrificial layer and the second sacrificial layer can be removed at the same time.
实施例Example
66
本发明实施例6提供了一种薄膜体声波谐振器的制造方法，图22至图30为本发明实施例6的一种薄膜体声波谐振器的制造方法中不同步骤对应的结构示意图，以下将参考图22至图30详细说明本实施例。Embodiment 6 of the present invention provides a method for manufacturing a thin-film bulk acoustic resonator. FIGS. 22 to 30 are schematic structural diagrams corresponding to different steps in a method for manufacturing a thin-film bulk acoustic resonator according to Embodiment 6 of the present invention. The present embodiment will be described in detail with reference to FIGS. 22 to 30 .
参考图22，提供承载衬底100，在承载衬底100上形成第一电极引出部303，第一电极引出部303的材料参照实施例1，可以通过物理气相沉积的方法形成第一导电层，之后图形化第一导电层形成第一电极引出部303。实施例4中的相关内容可以援引于此。Referring to FIG. 22, a carrier substrate 100 is provided, and a first electrode lead-out portion 303 is formed on the carrier substrate 100. The material of the first electrode lead-out portion 303 refers to Embodiment 1, and the first conductive layer can be formed by a physical vapor deposition method, Then, the first conductive layer is patterned to form the first electrode lead-out portion 303 . The relevant content in Embodiment 4 can be cited here.
参考图23和图24，形成第一介质层101和第一牺牲层210。具体为：在第一电极引出部303的外周及上方形成第一介质层101，刻蚀第一介质层101，形成第一间隙211，使第一电极引出部303的一端位于第一间隙211内，另一端位于第一间隙211外，第一电极引出部303的上表面可以保留一部分第一介质层，或者第一间隙211的底部暴露出第一电极引出部303。23 and 24, a first dielectric layer 101 and a first sacrificial layer 210 are formed. Specifically, the first dielectric layer 101 is formed on and above the first electrode lead-out portion 303 , the first dielectric layer 101 is etched to form a first gap 211 , and one end of the first electrode lead-out portion 303 is located in the first gap 211 , the other end is located outside the first gap 211 , and a part of the first dielectric layer may remain on the upper surface of the first electrode lead-out portion 303 , or the first electrode lead-out portion 303 may be exposed at the bottom of the first gap 211 .
参考图24，在所述第一间隙中填充第一牺牲层210，第一牺牲层的材料和形成方法参照实施4，第一牺牲层210和第一介质层101的上表面齐平。也可以先形成第一牺牲层，再形成第一介质层。实施例4中的相关内容可以援引于此。Referring to FIG. 24 , the first sacrificial layer 210 is filled in the first gap. The material and formation method of the first sacrificial layer refer to Embodiment 4. The upper surfaces of the first sacrificial layer 210 and the first dielectric layer 101 are flush. Alternatively, the first sacrificial layer may be formed first, and then the first dielectric layer may be formed. The relevant content in Embodiment 4 can be cited here.
继续参考图24，在第一牺牲层中形成第一导电凸起210，第一导电凸起210的下端连接于第一电极引出部303。实施例4中第一导电凸起210的结构、形状、位置的相关内容可以援引于此。参考图25，在所述第一牺牲层210、第一介质层101上依次形成第一电极层201’，压电层202，第二电极层203’，三者的材料和形成方法参照实施例4。Continuing to refer to FIG. 24 , a first conductive bump 210 is formed in the first sacrificial layer, and the lower end of the first conductive bump 210 is connected to the first electrode lead-out portion 303 . Contents related to the structure, shape, and position of the first conductive bumps 210 in Embodiment 4 can be cited here. Referring to FIG. 25 , a first electrode layer 201 ′, a piezoelectric layer 202 , and a second electrode layer 203 ′ are sequentially formed on the first sacrificial layer 210 and the first dielectric layer 101 , and the materials and forming methods of the three refer to the embodiments. 4.
参考图26，刻蚀第二电极层203’，压电层202，第一电极层201’，形成第二电极203，压电层202，第一电极201，本实施例中，三者的边缘均位于第一牺牲层210围成的区域上方，三者的边界重合。三者的边界构成了有效谐振区的边界，第一导电凸起301位于有效谐振区的边界处。第二电极层203’，压电层202，第一电极层201’同步刻蚀，节省工艺时间。26, the second electrode layer 203', the piezoelectric layer 202, and the first electrode layer 201' are etched to form the second electrode 203, the piezoelectric layer 202, and the first electrode 201. In this embodiment, the edges of the three All are located above the area surrounded by the first sacrificial layer 210, and the boundaries of the three are coincident. The boundaries of the three constitute the boundary of the effective resonance area, and the first conductive protrusion 301 is located at the boundary of the effective resonance area. The second electrode layer 203', the piezoelectric layer 202, and the first electrode layer 201' are etched synchronously to save process time.
参考图27，形成第二牺牲层220，第二牺牲层220覆盖第二电极203的表面及第二电极203，压电层202，第一电极201的外周220，在第二牺牲层220的外周形成第二介质层102。第二牺牲层220和第二介质层102的材料和形成方法参照实施例4。27 , a second sacrificial layer 220 is formed, the second sacrificial layer 220 covers the surface of the second electrode 203 and the second electrode 203 , the piezoelectric layer 202 , the outer periphery 220 of the first electrode 201 , and the outer periphery of the second sacrificial layer 220 A second dielectric layer 102 is formed. For the materials and forming methods of the second sacrificial layer 220 and the second dielectric layer 102, refer to Embodiment 4.
参考图28，在第二牺牲层220中形成第二导电凸起302，在第二牺牲层220的上表面形成第二电极引出部304，第二电极引出部304的一端位于第二牺牲层220的边界内，另一端位于第二牺牲层220外侧的第二介质层102上。Referring to FIG. 28 , a second conductive bump 302 is formed in the second sacrificial layer 220 , a second electrode lead-out portion 304 is formed on the upper surface of the second sacrificial layer 220 , and one end of the second electrode lead-out portion 304 is located in the second sacrificial layer 220 Within the boundary of , the other end is located on the second dielectric layer 102 outside the second sacrificial layer 220 .
参考图29，在第二牺牲层220、第二电极引出部304及第二牺牲层220外周的第二介质层102上形成介质层，以遮盖第二电极引出部304。Referring to FIG. 29 , a dielectric layer is formed on the second sacrificial layer 220 , the second electrode lead-out portion 304 and the second dielectric layer 102 around the second sacrificial layer 220 to cover the second electrode lead-out portion 304 .
参考图30，去除第一牺牲层和第二牺牲层形成第一间隙211和第二间隙221。本实施例中，第一牺牲层和第二牺牲层相接，两者为同样的材料，可以一次性去除。可以在第二牺牲层上方的第二介质层102中形成释放孔，通过释放孔去除。Referring to FIG. 30 , the first and second sacrificial layers are removed to form first and second gaps 211 and 221 . In this embodiment, the first sacrificial layer and the second sacrificial layer are in contact with each other, and both are made of the same material and can be removed at one time. Release holes may be formed in the second dielectric layer 102 over the second sacrificial layer, and removed through the release holes.
实施例6的变形例一Variation 1 of Embodiment 6
实施例6中，在形成第一电极引出部、第一结构、第一导电凸起之后，依次沉积第一电极层、压电层和第二电极层，之后对该三层结构进行图形化。相应的第一牺牲层和第二牺牲层相通，因此可以同时去除。In Example 6, after forming the first electrode lead-out portion, the first structure, and the first conductive bump, the first electrode layer, the piezoelectric layer and the second electrode layer are sequentially deposited, and then the three-layer structure is patterned. The corresponding first sacrificial layer and the second sacrificial layer communicate with each other, so they can be removed simultaneously.
在该变形例一中，在形成第一电极引出部、第一结构、第一导电凸起之后，形成第一电极和平坦层，所述第一电极和所述平坦层表面齐平；之后，在所述齐平的表面上形成压电层；然后，在所述压电层上形成第二电极层；图形化所述第二电极层形成第二电极。接下来的形成工艺步骤同实施例6。In this modification example 1, after forming the first electrode lead-out portion, the first structure, and the first conductive bump, a first electrode and a flat layer are formed, and the surface of the first electrode and the flat layer are flush; after that, A piezoelectric layer is formed on the flush surface; then, a second electrode layer is formed on the piezoelectric layer; and the second electrode layer is patterned to form a second electrode. The next forming process steps are the same as those in Embodiment 6.
其中不同的是，在图形化所述第二电极层之后，图形化所述压电层，以去除无效区的压电层或者在有效谐振区的压电层周边形成空气边隙。形成第二牺牲层时，第二牺牲层会填充在有效谐振区压电层周边的断开区域，因此第一牺牲层和第二牺牲层相通，因此可以同时去除。The difference is that after patterning the second electrode layer, the piezoelectric layer is patterned to remove the piezoelectric layer in the inactive region or form an air gap around the piezoelectric layer in the effective resonance region. When the second sacrificial layer is formed, the second sacrificial layer will fill in the disconnected area around the piezoelectric layer in the effective resonance region, so the first sacrificial layer and the second sacrificial layer are communicated and can be removed at the same time.
上述描述仅是对本发明较佳实施例的描述，并非对本发明范围的任何限定，本发明领域的普通技术人员根据上述揭示内容做的任何变更、修饰，均属于权利要求书的保护范围。The above description is only a description of the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention. Any changes and modifications made by those of ordinary skill in the field of the present invention based on the above disclosure all belong to the protection scope of the claims.
Claims (31)
- 一种薄膜体声波谐振器，其特征在于，包括：层叠的第一电极、压电层和第二电极，有效谐振区包括所述第一电极、压电层和第二电极在垂直于所述压电层表面方向上相互重叠的区域，所述有效谐振区的外部为无效区；第一介质层，所述第一介质层的上表面与所述第一电极的下表面之间设有第一间隙；第二介质层，所述第二介质层的下表面与所述第二电极的上表面之间设有第二间隙；第一导电凸起，一端设置于所述第一电极的下表面，另一端连接有第一电极引出部；第二导电凸起，一端设置于所述第二电极的上表面，另一端连接有第二电极引出部。A thin film bulk acoustic wave resonator is characterized in that, it comprises: a first electrode, a piezoelectric layer and a second electrode that are stacked, and an effective resonance region includes the first electrode, the piezoelectric layer and the second electrode perpendicular to the In the area overlapping each other in the surface direction of the piezoelectric layer, the outside of the effective resonance area is an inactive area; the first dielectric layer, a first dielectric layer is provided between the upper surface of the first dielectric layer and the lower surface of the first electrode. a gap; a second dielectric layer, a second gap is set between the lower surface of the second dielectric layer and the upper surface of the second electrode; a first conductive protrusion, one end of which is disposed under the first electrode The other end is connected with the first electrode lead-out part; one end of the second conductive protrusion is arranged on the upper surface of the second electrode, and the other end is connected with the second electrode lead-out part.
- 根据权利要求1所述的薄膜体声波谐振器，其特征在于，所述第一电极位于所述第一间隙的边界围成的区域内，或者二者边界重合；和/或，所述第二电极位于所述第二间隙的边界围成的区域内，或者二者边界重合。The thin film bulk acoustic wave resonator according to claim 1, wherein the first electrode is located in an area enclosed by the boundary of the first gap, or the boundaries of the two overlap; and/or the second electrode The electrodes are located in the area enclosed by the boundary of the second gap, or the boundaries of the two are coincident.
- 根据权利要求1所述的薄膜体声波谐振器，其特征在于，所述第一间隙且所述第二间隙在所述压电层方向上的投影的边界包围所述有效谐振区在所述压电层方向上的投影的边界。The thin film bulk acoustic wave resonator according to claim 1, wherein the boundary of the projection of the first gap and the second gap in the direction of the piezoelectric layer surrounds the effective resonance region in the piezoelectric layer. Boundary of the projection in the direction of the electrical layer.
- 根据权利要求1所述的薄膜体声波谐振器，其特征在于，所述第一间隙且所述第二间隙在所述压电层方向上的投影的边界包围所述第一电极和所述第二电极在所述压电层方向上的投影的边界。The thin film bulk acoustic wave resonator according to claim 1, wherein the boundary of the projection of the first gap and the second gap in the direction of the piezoelectric layer surrounds the first electrode and the second gap. The boundary of the projection of the two electrodes in the direction of the piezoelectric layer.
- 根据权利要求1所述的薄膜体声波谐振器，其特征在于，所述第一间隙和所述第二间隙相互连通，或者，所述第一间隙和所述第二间隙相互隔离。The thin film bulk acoustic wave resonator according to claim 1, wherein the first gap and the second gap communicate with each other, or the first gap and the second gap are isolated from each other.
- 根据权利要求1所述的薄膜体声波谐振器，其特征在于，所述第一间隙和所述第二间隙通过分布于所述无效区的多个通孔连通；或者，所述第一间隙、第二间隙通过包围有效区的环形通孔连通。The thin film bulk acoustic wave resonator according to claim 1, wherein the first gap and the second gap are communicated through a plurality of through holes distributed in the inactive region; or, the first gap, The second gap is communicated through an annular through hole surrounding the effective area.
- 根据权利要求1所述的薄膜体声波谐振器，其特征在于，所述无效区的所述第一间隙和所述第二间隙之间设有膜层，所述膜层为压电层或与压电层材料不同的膜层；或者，所述压电层仅位于所述有效谐振区。The thin film bulk acoustic wave resonator according to claim 1, wherein a film layer is provided between the first gap and the second gap of the inactive region, and the film layer is a piezoelectric layer or a A film layer with different piezoelectric layer materials; or, the piezoelectric layer is only located in the effective resonance region.
- 根据权利要求1所述的薄膜体声波谐振器，其特征在于，所述压电层包括谐振部和位于所述谐振部外周的搭接部，所述谐振部至少部分位于所述有效谐振区，所述搭接部位于所述有效谐振区外，所述谐振部与所述搭接部相接或分离。The thin film bulk acoustic wave resonator according to claim 1, wherein the piezoelectric layer comprises a resonance part and a lap joint located on the outer periphery of the resonance part, and the resonance part is at least partially located in the effective resonance region, The overlapping portion is located outside the effective resonance region, and the resonance portion is connected to or separated from the overlapping portion.
- 根据权利要求8所述的薄膜体声波谐振器，其特征在于，所述搭接部和所述谐振部相接，所述压电层为完整的膜层，所述压电层将所述第一间隙与所述第二间隙隔离。The thin film bulk acoustic wave resonator according to claim 8, wherein the overlapping portion is connected to the resonating portion, the piezoelectric layer is a complete film layer, and the piezoelectric layer connects the first A gap is isolated from the second gap.
- 根据权利要求8所述的薄膜体声波谐振器，其特征在于，所述搭接部和所述谐振部相互分离，所述第一间隙和所述第二间隙连通成空腔，所述谐振部的外周暴露在所述空腔中。The thin film bulk acoustic wave resonator according to claim 8, wherein the overlapping portion and the resonating portion are separated from each other, the first gap and the second gap communicate with each other to form a cavity, and the resonating portion The periphery is exposed in the cavity.
- 根据权利要求1所述的薄膜体声波谐振器，其特征在于，所述第一导电凸起和/或所述第二导电凸起设置于所述有效谐振区的边界处。The thin film bulk acoustic wave resonator according to claim 1, wherein the first conductive protrusion and/or the second conductive protrusion are arranged at the boundary of the effective resonance region.
- 根据权利要求1所述的薄膜体声波谐振器，其特征在于，至少部分所述第一导电凸起设置于所述第一间隙边界处；和/或，至少部分所述第二导电凸起设置于所述第二间隙的边界处。The thin film bulk acoustic wave resonator according to claim 1, wherein at least part of the first conductive protrusions are disposed at the boundary of the first gap; and/or at least part of the second conductive protrusions are disposed at the boundary of the second gap.
- 根据权利要求1所述的薄膜体声波谐振器，其特征在于，所述第一导电凸起和/或所述第二导电凸起在所述压电层方向上的投影为封闭或间断的环形。The thin film bulk acoustic wave resonator according to claim 1, wherein the projection of the first conductive protrusion and/or the second conductive protrusion in the direction of the piezoelectric layer is a closed or discontinuous annular shape .
- 根据权利要求11所述的薄膜体声波谐振器，其特征在于，所述第一导电凸起和所述第二导电凸起在所述压电层方向上的投影至少部分重合或，其中之一位于另一外周。The thin film bulk acoustic wave resonator according to claim 11, wherein the projections of the first conductive bump and the second conductive bump in the direction of the piezoelectric layer at least partially overlap or one of them on the other periphery.
- 根据权利要求7所述的薄膜体声波谐振器，其特征在于，所述第一导电凸起设置在所述第一间隙的边界处或，所述第一导电凸起与所述第一间隙的边界设有距离或，一部分所述第一导电凸起设置在所述第一间隙边界处，另一部分所述第一导电凸起与所述第一间隙的边界设有距离；和/或，所述第二导电凸起设置在所述第二间隙的边界处或，所述第二导电凸起与所述第二间隙的边界设有距离或，一部分所述第二导电凸起设置在所述第二间隙边界处，另一部分所述第二导电凸起与所述第二间隙的边界设有距离。The thin-film bulk acoustic wave resonator according to claim 7, wherein the first conductive protrusion is disposed at the boundary of the first gap or the first conductive protrusion is located between the first conductive protrusion and the first gap. The boundary is set with a distance or, a part of the first conductive bumps is arranged at the boundary of the first gap, and another part of the first conductive bump is set at a distance from the boundary of the first gap; and/or, all the The second conductive bumps are arranged at the boundary of the second gap or, the second conductive bumps are set at a distance from the boundary of the second gap, or a part of the second conductive bumps are arranged at the boundary of the second gap. At the boundary of the second gap, another part of the second conductive protrusion is set at a distance from the boundary of the second gap.
- 根据权利要求1所述的薄膜体声波谐振器，其特征在于，所述第一电极引出部埋设于所述第一介质层中；和/或，所述第二电极引出部埋设于所述第二介质层中。The thin film bulk acoustic wave resonator according to claim 1, wherein the first electrode lead-out portion is embedded in the first dielectric layer; and/or the second electrode lead-out portion is embedded in the second electrode lead-out portion. in the second dielectric layer.
- 根据权利要求1所述的薄膜体声波谐振器，其特征在于，在所述有效谐振区外部，所述第一电极引出部和所述第二电极引出部在所述压电层方向上的投影相互错开。The thin film bulk acoustic wave resonator according to claim 1, wherein, outside the effective resonance region, the projections of the first electrode lead-out portion and the second electrode lead-out portion in the direction of the piezoelectric layer staggered from each other.
- 根据权利要求1所述的薄膜体声波谐振器，其特征在于，与所述第一间隙相对的所述第一介质层中设有第一释放孔和/或与所述第二间隙相对的所述第二介质层中设有第二释放孔，所述第一释放孔和所述第二释放孔中填充有介质材料。The thin-film bulk acoustic wave resonator according to claim 1, wherein the first dielectric layer opposite to the first gap is provided with a first release hole and/or the first release hole opposite to the second gap The second medium layer is provided with a second release hole, and the first release hole and the second release hole are filled with a medium material.
- 根据权利要求1所述的薄膜体声波谐振器，其特征在于，所述第一导电凸起或所述第二导电凸起或所述第一电极引出部或所述第二电极引出部的材料包括：金、银、钨、铂、铝、铜。The thin film bulk acoustic wave resonator according to claim 1, wherein the material of the first conductive bump or the second conductive bump or the first electrode lead-out portion or the second electrode lead-out portion Including: Gold, Silver, Tungsten, Platinum, Aluminum, Copper.
- 一种权利要求1-4、11-17任一项薄膜体声波谐振器的制造方法，其特征在于，包括：形成第一结构，所述第一结构包括：第一电极、至少覆盖所述第一电极的第一牺牲层、至少在所述第一牺牲层侧面包围所述第一牺牲层的介质层；形成第一导电凸起，贯穿所述第一牺牲层、一端连接所述第一电极；形成第一电极引出部，一端连接所述第一导电凸起的另一端，另一端延伸出所述有效谐振区；形成压电层；形成第二结构，所述第二结构包括：第二电极、至少覆盖所述第二电极的第二牺牲层、至少在所述第二牺牲层侧面包围所述第二牺牲层的介质层；形成第二导电凸起，贯穿所述第二牺牲层、一端连接所述第二电极；形成第二电极引出部，一端连接所述第二导电凸起的另一端，另一端延伸出所述有效谐振区；去除所述第一牺牲层、第二牺牲层，形成所述第一间隙、第二间隙。A method for manufacturing a thin-film bulk acoustic resonator according to any one of claims 1-4 and 11-17, characterized by comprising: forming a first structure, the first structure comprising: a first electrode, at least covering the first electrode A first sacrificial layer of an electrode, a dielectric layer surrounding the first sacrificial layer at least on the side of the first sacrificial layer; a first conductive bump is formed, penetrating the first sacrificial layer, and one end is connected to the first electrode forming a first electrode lead-out portion, one end is connected to the other end of the first conductive bump, and the other end extends out of the effective resonance area; forming a piezoelectric layer; forming a second structure, the second structure includes: a second an electrode, a second sacrificial layer covering at least the second electrode, a dielectric layer surrounding the second sacrificial layer at least on the side of the second sacrificial layer; forming a second conductive bump, penetrating the second sacrificial layer, One end is connected to the second electrode; a second electrode lead-out portion is formed, one end is connected to the other end of the second conductive bump, and the other end extends out of the effective resonance region; the first sacrificial layer and the second sacrificial layer are removed , forming the first gap and the second gap.
- 根据权利要求20所述的薄膜体声波谐振器的制造方法，其特征在于，还包括：提供临时衬底；在所述临时衬底上依次形成所述第一结构、第一导电凸起、第一电极引出部；在所述第一电极引出部所在侧键合承载衬底，去除所述临时衬底；在所述承载衬底上依次形成所述第二结构、第二导电凸起、第二电极引出部。The method for manufacturing a thin-film bulk acoustic resonator according to claim 20, further comprising: providing a temporary substrate; sequentially forming the first structure, the first conductive bump, and the first structure on the temporary substrate an electrode lead-out part; a carrier substrate is bonded on the side where the first electrode lead-out part is located, and the temporary substrate is removed; the second structure, the second conductive protrusion, the first Two electrode lead-out parts.
- 根据权利要求20所述的薄膜体声波谐振器的制造方法，其特征在于，还包括：提供承载衬底；在所述承载衬底上先形成所述第一电极引出部，之后形成第一结构和第一导电凸起；之后形成所述第二结构、第二导电凸起、第二电极引出部。The method for manufacturing a thin-film bulk acoustic resonator according to claim 20, further comprising: providing a carrier substrate; firstly forming the first electrode lead-out portion on the carrier substrate, and then forming the first structure and the first conductive bump; then the second structure, the second conductive bump, and the second electrode lead-out portion are formed.
- 根据权利要求20所述的薄膜体声波谐振器的制造方法，其特征在于，还包括：提供临时衬底；在所述临时衬底上依次形成所述第一结构、压电层、第二结构、第二导电凸起、第二电极引出部；在所述第二电极引出部所在侧键合承载衬底，之后去除所述临时衬底；键合所述承载衬底后，依次形成所述第一导电凸起、所述第一电极引出部。The method for manufacturing a thin film bulk acoustic resonator according to claim 20, further comprising: providing a temporary substrate; forming the first structure, the piezoelectric layer, and the second structure in sequence on the temporary substrate , a second conductive bump, and a second electrode lead-out portion; a carrier substrate is bonded on the side where the second electrode lead-out portion is located, and then the temporary substrate is removed; after the carrier substrate is bonded, the The first conductive protrusion and the first electrode lead-out portion.
- 根据权利要求21-23任一项所述的薄膜体声波谐振器的制造方法，其特征在于，依次形成第二电极层、压电层、第一电极层；图形化所述第一电极层，形成所述第一电极；形成第一结构后，图形化所述第二电极层形成第二电极；保留压电层的完整性，所述第一间隙和所述第二间隙通过所述压电层相互隔开；或者，形成第一电极层、压电层、第二电极层；图形化所述第一电极层，形成所述第一电极；形成第一结构后，图形化所述第二电极层形成第二电极；在形成所述第一电极之后或者形成所述第二电极之后，图形化所述压电层，以去除无效区的压电层或者在有效谐振区的压电层周边形成空气边隙；或者，形成第一电极层、压电层、第二电极层；图形化所述第一电极层、压电层、第二电极层，去除位于无效区的第一电极层部分、压电层部分、第二电极层部分，以形成所述第一电极、第二电极、压电层；之后，形成所述第一牺牲层、至少在所述第一牺牲层侧面包围所述第一牺牲层的介质层，所述第一牺牲层覆盖所述第一电极、第二电极、压电层的顶面和侧面；或者，形成第一电极层、压电层、第二电极层；图形化所述第一电极层，形成所述第一电极；形成所述第一牺牲层、至少在所述第一牺牲层侧面包围所述第一牺牲层的的介质层，所述第一牺牲层覆盖所述第一电极的顶面和侧面；图形化所述第二电极层形成所述第二电极；在形成所述第一电极之后或者形成所述第二电极之后，图形化所述压电层，以去除无效区的压电层或者在有效谐振区的压电层周边形成空气边隙；或者，形成第一电极和平坦层，所述第一电极和所述平坦层表面齐平；在所述齐平的表面上形成压电层；在所述压电层上形成第二电极层；图形化所述第二电极层形成第二电极；压电层位于有效谐振区和无效区；或者，在图形化所述第二电极层之前或者之后，图形化所述压电层，以去除无效区的压电层或者在有效谐振区的压电层周边形成空气边隙。The method for manufacturing a thin film bulk acoustic resonator according to any one of claims 21 to 23, wherein the second electrode layer, the piezoelectric layer and the first electrode layer are formed in sequence; the first electrode layer is patterned, forming the first electrode; after forming the first structure, patterning the second electrode layer to form a second electrode; preserving the integrity of the piezoelectric layer, the first gap and the second gap passing through the piezoelectric or, forming a first electrode layer, a piezoelectric layer, and a second electrode layer; patterning the first electrode layer to form the first electrode; after forming the first structure, patterning the second electrode layer The electrode layer forms a second electrode; after forming the first electrode or after forming the second electrode, patterning the piezoelectric layer to remove the piezoelectric layer in the inactive area or around the piezoelectric layer in the effective resonance area forming an air gap; or, forming a first electrode layer, a piezoelectric layer, and a second electrode layer; patterning the first electrode layer, the piezoelectric layer, and the second electrode layer, and removing the part of the first electrode layer located in the inactive area , a piezoelectric layer part, and a second electrode layer part to form the first electrode, the second electrode, and the piezoelectric layer; then, the first sacrificial layer is formed to surround the first sacrificial layer at least on the side of the first sacrificial layer The dielectric layer of the first sacrificial layer, the first sacrificial layer covers the top surface and the side surface of the first electrode, the second electrode and the piezoelectric layer; or, the first electrode layer, the piezoelectric layer and the second electrode layer are formed ; patterning the first electrode layer to form the first electrode; forming the first sacrificial layer, at least a dielectric layer surrounding the first sacrificial layer on the side of the first sacrificial layer, the first sacrificial layer A sacrificial layer covers the top and side surfaces of the first electrode; patterning the second electrode layer to form the second electrode; after forming the first electrode or after forming the second electrode, patterning the second electrode piezoelectric layer, to remove the piezoelectric layer in the inactive area or form an air gap around the piezoelectric layer in the effective resonance area; or, to form a first electrode and a flat layer, the first electrode and the flat layer are flush with the surface forming a piezoelectric layer on the flush surface; forming a second electrode layer on the piezoelectric layer; patterning the second electrode layer to form a second electrode; the piezoelectric layer is located in the effective resonance area and the inactive area or, before or after patterning the second electrode layer, pattern the piezoelectric layer to remove the piezoelectric layer in the inactive region or form an air gap around the piezoelectric layer in the effective resonance region.
- 根据权利要求20所述的薄膜体声波谐振器的制造方法，其特征在于，形成所述第一结构的方法包括：形成第一电极层，对所述第一电极层进行图形化形成所述第一电极；形成第一牺牲层，所述第一牺牲层仅覆盖所述第一电极顶面或覆盖所述第一电极顶面及侧面；形成所述至少在所述第一牺牲层侧面包围所述第一牺牲层的介质层，覆盖所述第一牺牲层的侧面及第一电极的侧面或覆盖所述第一牺牲层的侧面、顶面及第一电极的侧面；或者，形成第一电极层，对所述第一电极层进行图形化形成所述第一电极；形成所述至少在所述第一牺牲层侧面包围所述第一牺牲层的介质层，覆盖所述第一电极及周边区域；刻蚀所述至少在所述第一牺牲层侧面包围所述第一牺牲层的介质层形成第一空隙，在所述第一空隙中形成所述第一牺牲层。The method for manufacturing a thin film bulk acoustic resonator according to claim 20, wherein the method for forming the first structure comprises: forming a first electrode layer, and patterning the first electrode layer to form the first electrode layer. an electrode; forming a first sacrificial layer, the first sacrificial layer covering only the top surface of the first electrode or covering the top surface and side surfaces of the first electrode; The dielectric layer of the first sacrificial layer covers the side surfaces of the first sacrificial layer and the side surfaces of the first electrode or covers the side surfaces, the top surface and the side surfaces of the first electrode of the first sacrificial layer; or, forms a first electrode forming the first electrode layer by patterning the first electrode layer; forming the dielectric layer surrounding the first sacrificial layer at least on the side of the first sacrificial layer and covering the first electrode and its periphery area; etching the dielectric layer surrounding the first sacrificial layer at least on the side of the first sacrificial layer to form a first void, and forming the first sacrificial layer in the first void.
- 根据权利要求20所述的薄膜体声波谐振器的制造方法，其特征在于，形成所述第二结构的方法包括：形成第二电极层，对所述第二电极层进行图形化形成所述第二电极；形成第二牺牲层，所述第二牺牲层仅覆盖所述第二电极顶面或覆盖所述第二电极顶面及侧面；形成至少在所述第二牺牲层侧面包围所述第二牺牲层的介质层，覆盖所述第二牺牲层的侧面及第二电极的侧面或覆盖所述第二牺牲层的侧面、顶面及第二电极的侧面；或者，形成第二电极层，对所述第二电极层进行图形化形成所述第二电极；形成至少在所述第二牺牲层侧面包围所述第二牺牲层的介质层，覆盖所述第二电极及周边区域；刻蚀所述至少在所述第二牺牲层侧面包围所述第二牺牲层的介质层形成第二空隙，在所述第二空隙中形成所述第二牺牲层。The method for manufacturing a thin film bulk acoustic wave resonator according to claim 20, wherein the method for forming the second structure comprises: forming a second electrode layer, and patterning the second electrode layer to form the first electrode layer. two electrodes; forming a second sacrificial layer, the second sacrificial layer covering only the top surface of the second electrode or covering the top surface and side surfaces of the second electrode; forming at least the side surface of the second sacrificial layer to surround the first The dielectric layer of the two sacrificial layers covers the side surfaces of the second sacrificial layer and the side surfaces of the second electrode or covers the side surfaces, the top surface and the side surfaces of the second electrode of the second sacrificial layer; or, forms a second electrode layer, forming the second electrode by patterning the second electrode layer; forming a dielectric layer surrounding the second sacrificial layer at least on the side of the second sacrificial layer, covering the second electrode and surrounding areas; etching The dielectric layer surrounding the second sacrificial layer at least at the side of the second sacrificial layer forms a second void, and the second sacrificial layer is formed in the second void.
- 根据权利要求20所述的薄膜体声波谐振器的制造方法，其特征在于，形成所述第一导电凸起包括：图形化所述第一电极及第一电极引出部之间的膜层，形成第一通孔；在所述第一通孔内填充导电材料形成所述第一导电凸起；和/或，形成所述第二导电凸起包括：图形化所述第二电极及第二电极引出部之间的膜层，形成第二通孔；在所述第二通孔内填充导电材料形成所述第二导电凸起。The method for manufacturing a thin-film bulk acoustic resonator according to claim 20, wherein forming the first conductive bumps comprises: patterning a film layer between the first electrode and the lead-out portion of the first electrode, forming a first through hole; filling the first through hole with a conductive material to form the first conductive bump; and/or, forming the second conductive bump includes: patterning the second electrode and the second electrode The film layer between the lead-out parts forms a second through hole; the second through hole is filled with a conductive material to form the second conductive bump.
- 根据权利要求20所述的薄膜体声波谐振器的制造方法，其特征在于，形成第一电极引出部包括：形成第一钝化层；刻蚀所述第一钝化层形成第一凹槽；在所述第一凹槽中形成第一导电层，作为所述第一电极引出部；或者，形成第一导电层，图形化所述第一导电层形成所述第一电极引出部；形成第一钝化层，覆盖所述第一电极引出部；所述至少在所述第一牺牲层侧面包围所述第一牺牲层的介质层包括所述第一钝化层。The method for manufacturing a thin film bulk acoustic resonator according to claim 20, wherein forming the first electrode lead-out portion comprises: forming a first passivation layer; etching the first passivation layer to form a first groove; A first conductive layer is formed in the first groove as the first electrode lead-out portion; or, a first conductive layer is formed, and the first conductive layer is patterned to form the first electrode lead-out portion; a passivation layer covering the first electrode lead-out portion; the dielectric layer surrounding the first sacrificial layer at least on the side of the first sacrificial layer includes the first passivation layer.
- 根据权利要求20所述的薄膜体声波谐振器的制造方法，其特征在于，形成第二电极引出部包括：形成第二钝化层；刻蚀所述第二钝化层形成第二凹槽；在所述第二凹槽中形成第二导电层，作为所述第二电极引出部；或者，形成第二导电层，图形化所述第二导电层形成所述第二电极引出部；The method for manufacturing a thin-film bulk acoustic resonator according to claim 20, wherein forming the second electrode lead-out portion comprises: forming a second passivation layer; etching the second passivation layer to form a second groove; forming a second conductive layer in the second groove as the second electrode lead-out portion; or, forming a second conductive layer, patterning the second conductive layer to form the second electrode lead-out portion;形成第二钝化层，覆盖所述第二电极引出部；所述至少在所述第二牺牲层侧面包围所述第二牺牲层的介质层包括所述第二钝化层。A second passivation layer is formed to cover the second electrode lead-out portion; the dielectric layer surrounding the second sacrificial layer at least on the side of the second sacrificial layer includes the second passivation layer.
- 根据权利要求20所述的薄膜体声波谐振器的制造方法，其特征在于，The method for manufacturing a thin-film bulk acoustic resonator according to claim 20, wherein:所述第一牺牲层形成于所述第二牺牲层前，去除所述第一牺牲层、第二牺牲层包括:形成所述第二牺牲层前去除所述第一牺牲层或形成所述第二牺牲层后，去除所述第一牺牲层和所述第二牺牲层；或，所述第一牺牲层形成于所述第二牺牲层后，去除所述第一牺牲层、第二牺牲层包括:形成所述第一牺牲层前去除所述第二牺牲层或形成所述第一牺牲层后，去除所述第一牺牲层和所述第二牺牲层；或者，所述第一牺牲层、所述第二牺牲层相互连通，同时去除所述第一牺牲层、第二牺牲层。The first sacrificial layer is formed before the second sacrificial layer, and removing the first sacrificial layer and the second sacrificial layer includes: removing the first sacrificial layer or forming the first sacrificial layer before forming the second sacrificial layer. After two sacrificial layers, the first sacrificial layer and the second sacrificial layer are removed; or, after the first sacrificial layer is formed on the second sacrificial layer, the first sacrificial layer and the second sacrificial layer are removed Including: removing the second sacrificial layer before forming the first sacrificial layer or removing the first sacrificial layer and the second sacrificial layer after forming the first sacrificial layer; or, the first sacrificial layer , the second sacrificial layers are connected to each other, and the first sacrificial layer and the second sacrificial layer are removed at the same time.
- 根据权利要求20所述的薄膜体声波谐振器的制造方法，其特征在于，所述第一牺牲层或所述第二牺牲层的材料包括：磷硅玻璃、低温二氧化硅、硼磷硅玻璃、锗、碳、聚酰亚胺或光阻剂。The method for manufacturing a thin film bulk acoustic resonator according to claim 20, wherein the material of the first sacrificial layer or the second sacrificial layer comprises: phosphosilicate glass, low temperature silicon dioxide, borophosphosilicate glass , germanium, carbon, polyimide or photoresist.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010674969.2A CN113938108A (en) | 2020-07-14 | 2020-07-14 | Film bulk acoustic resonator and method for manufacturing the same |
| CN202010674969.2 | 2020-07-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2022012438A1 true WO2022012438A1 (en) | 2022-01-20 |
Family
ID=79273828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/CN2021/105531 WO2022012438A1 (en) | 2020-07-14 | 2021-07-09 | Film bulk acoustic resonator and manufacturing method therefor |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN113938108A (en) |
| WO (1) | WO2022012438A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114553163A (en) * | 2022-04-28 | 2022-05-27 | 深圳新声半导体有限公司 | Method for manufacturing bulk acoustic wave resonator |
| CN114900147A (en) * | 2022-07-08 | 2022-08-12 | 深圳新声半导体有限公司 | Bulk acoustic wave resonator and method for manufacturing the same |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106877836A (en) * | 2015-12-14 | 2017-06-20 | 中芯国际集成电路制造(上海)有限公司 | A kind of FBAR and its manufacture method and electronic installation |
| CN107181470A (en) * | 2016-03-10 | 2017-09-19 | 中芯国际集成电路制造(上海)有限公司 | FBAR, semiconductor devices and its manufacture method |
| CN110798160A (en) * | 2019-10-18 | 2020-02-14 | 武汉大学 | Chip structure of monolithic integrated power amplifier and bulk acoustic wave filter and preparation method thereof |
| CN110829997A (en) * | 2018-08-07 | 2020-02-21 | 上海珏芯光电科技有限公司 | Film bulk acoustic resonator and method for manufacturing the same |
| CN111010127A (en) * | 2019-12-23 | 2020-04-14 | 武汉大学 | Film bulk acoustic resonator and preparation method thereof |
| US20200220514A1 (en) * | 2016-03-11 | 2020-07-09 | Akoustis, Inc. | Piezoelectric acoustic resonator manufactured with piezoelectric thin film transfer process |
-
2020
- 2020-07-14 CN CN202010674969.2A patent/CN113938108A/en active Pending
-
2021
- 2021-07-09 WO PCT/CN2021/105531 patent/WO2022012438A1/en active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106877836A (en) * | 2015-12-14 | 2017-06-20 | 中芯国际集成电路制造(上海)有限公司 | A kind of FBAR and its manufacture method and electronic installation |
| CN107181470A (en) * | 2016-03-10 | 2017-09-19 | 中芯国际集成电路制造(上海)有限公司 | FBAR, semiconductor devices and its manufacture method |
| US20200220514A1 (en) * | 2016-03-11 | 2020-07-09 | Akoustis, Inc. | Piezoelectric acoustic resonator manufactured with piezoelectric thin film transfer process |
| CN110829997A (en) * | 2018-08-07 | 2020-02-21 | 上海珏芯光电科技有限公司 | Film bulk acoustic resonator and method for manufacturing the same |
| CN110798160A (en) * | 2019-10-18 | 2020-02-14 | 武汉大学 | Chip structure of monolithic integrated power amplifier and bulk acoustic wave filter and preparation method thereof |
| CN111010127A (en) * | 2019-12-23 | 2020-04-14 | 武汉大学 | Film bulk acoustic resonator and preparation method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114553163A (en) * | 2022-04-28 | 2022-05-27 | 深圳新声半导体有限公司 | Method for manufacturing bulk acoustic wave resonator |
| CN114900147A (en) * | 2022-07-08 | 2022-08-12 | 深圳新声半导体有限公司 | Bulk acoustic wave resonator and method for manufacturing the same |
| CN114900147B (en) * | 2022-07-08 | 2022-11-01 | 深圳新声半导体有限公司 | Bulk acoustic wave resonator and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113938108A (en) | 2022-01-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7130841B2 (en) | Thin-film bulk acoustic wave resonator and manufacturing method thereof | |
| CN112039465B (en) | Film bulk acoustic resonator and manufacturing method thereof | |
| CN112039486A (en) | Film bulk acoustic resonator and method for manufacturing the same | |
| CN112039463B (en) | Method for manufacturing film bulk acoustic resonator | |
| JP7138988B2 (en) | Bulk acoustic wave resonator, manufacturing method thereof, filter, radio frequency communication system | |
| US20230353118A1 (en) | Film bulk acoustic resonator and fabrication method thereof | |
| JP7081041B2 (en) | Thin-film bulk acoustic wave resonators and their manufacturing methods, filters, and radio frequency communication systems | |
| CN112039467A (en) | Film bulk acoustic resonator and manufacturing method thereof | |
| JP2005333642A (en) | Air gap type thin film bulk acoustic resonator and its manufacturing process | |
| JP7194476B2 (en) | Bulk acoustic wave resonator, manufacturing method thereof, filter, radio frequency communication system | |
| CN112039468B (en) | Thin film bulk acoustic resonator and method of manufacturing the same | |
| WO2022012438A1 (en) | Film bulk acoustic resonator and manufacturing method therefor | |
| WO2020199510A1 (en) | Bulk acoustic wave resonator and manufacturing method therefor, filter and radio-frequency communication system | |
| WO2022100469A1 (en) | Film bulk acoustic resonator and manufacturing method therefor, and filter | |
| CN112039469A (en) | Method for manufacturing film bulk acoustic resonator | |
| WO2021189964A1 (en) | Thin film bulk acoustic resonator and manufacturing method therefor | |
| CN112787614A (en) | Thin film lamb wave resonator, filter and manufacturing method thereof | |
| CN112039462A (en) | Film bulk acoustic resonator and manufacturing method thereof | |
| WO2022022264A1 (en) | Surface acoustic wave resonator and production method therefor | |
| WO2022057766A1 (en) | Method for manufacturing film bulk acoustic resonator, and filter | |
| WO2022057466A1 (en) | Film bulk acoustic resonator, manufacturing method therefor and filter thereof | |
| WO2022057767A1 (en) | Method for manufacturing thin-film bulk acoustic resonator | |
| WO2022057769A1 (en) | Thin-film bulk acoustic wave resonator and method for manufacture thereof and filter | |
| WO2022057768A1 (en) | Manufacturing method for thin film bulk acoustic wave resonator | |
| JP7194474B2 (en) | Bulk acoustic wave resonator, manufacturing method thereof, filter, radio frequency communication system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 21842085 Country of ref document: EP Kind code of ref document: A1 |
|
| NENP | Non-entry into the national phase |
Ref country code: DE |
|
| 122 | Ep: pct application non-entry in european phase |
Ref document number: 21842085 Country of ref document: EP Kind code of ref document: A1 |