CN110829997A - Film bulk acoustic resonator and method for manufacturing the same - Google Patents
Film bulk acoustic resonator and method for manufacturing the same Download PDFInfo
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- CN110829997A CN110829997A CN201810893030.8A CN201810893030A CN110829997A CN 110829997 A CN110829997 A CN 110829997A CN 201810893030 A CN201810893030 A CN 201810893030A CN 110829997 A CN110829997 A CN 110829997A
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- 239000000919 ceramic Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
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- 229910052744 lithium Inorganic materials 0.000 claims description 4
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- MNKMDLVKGZBOEW-UHFFFAOYSA-M lithium;3,4,5-trihydroxybenzoate Chemical compound [Li+].OC1=CC(C([O-])=O)=CC(O)=C1O MNKMDLVKGZBOEW-UHFFFAOYSA-M 0.000 claims description 4
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Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02047—Treatment of substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H2009/02165—Tuning
- H03H2009/02173—Tuning of film bulk acoustic resonators [FBAR]
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention discloses a film bulk acoustic resonator and a manufacturing method thereof. Within the cavity overlap region and outside the electrode overlap region, first electrode lamellar body and second electrode lamellar body contain first vibrations buffering strip and second vibrations buffering strip respectively, can reduce the rigidity (the reinforcing flexibility) of horizontal direction effectively, and influence the rigidity of vertical direction less, to the horizontal elastic wave of horizontal direction along the electrode slice propagation, play a cushioning effect to reduce the intensity of elastic reflection wave. In addition, the piezoelectric induction oscillation piece clamped between the first electrode piece body and the second electrode piece body is integrally arranged in the cavity overlapping area, the boundary of the piezoelectric induction oscillation piece is a polygon without any parallel opposite sides, the additional standing wave oscillation which becomes noise waves in the horizontal direction is eliminated, and meanwhile, the energy consumed by transverse parasitic waves is reduced to the maximum extent. Corresponding production methods are also disclosed.
Description
Technical Field
The invention relates to the technical field of filter devices, in particular to a thin film bulk acoustic Resonator (BAWR) and a manufacturing method thereof.
Background
With the development of mobile communication technology, the amount of mobile data transmission is also rapidly increasing. Therefore, increasing the transmission power of a wireless power transmitting device such as a wireless base station, a micro base station or a repeater becomes a problem that must be considered under the premise that the frequency resources are limited and the mobile communication device should be used as little as possible, and the requirement for the filter power in the front-end circuit of the mobile communication device is higher and higher.
At present, a high-power filter in a wireless base station and other devices is mainly a cavity filter, and the power of the high-power filter can reach hundreds of watts, but the size of the high-power filter is too large. There are also devices that use dielectric filters with average powers of up to 5 watts or more, which are also large in size. Due to the large size, the cavity filter cannot be integrated into the rf front-end chip.
The thin film filter based on the semiconductor micromachining technology mainly comprises a Surface Acoustic Wave (SAWR) filter and a Bulk Acoustic Wave Resonator (BAWR), and can well overcome the defects of the two filters. BAWR's operating frequency is high, bears power height and Quality Factor (Q-Factor) height to small, do benefit to and integrate.
As shown in fig. 1, a prior art film bulk acoustic resonator R10 includes a substrate R20 having a lower cavity R40, and an insulating sheet body R30 formed on the substrate R20, a lower cavity R40 formed in the insulating sheet body R30, an oscillating device sheet body R100 formed on the substrate R20 so as to cross over the lower cavity R40, the oscillating device sheet body R100 including an upper electrode R70 and a lower electrode R50, and a piezoelectric sensing sheet R60 located between the upper electrode R70 and the lower electrode R50; the oscillating device sheet body R100 is provided with a through hole R90 communicated with the lower cavity R40; the oscillating device body R50 is generally a piezoelectric film whose principal piezoelectric axis C-axis is oriented perpendicular to the oscillating device body R100 and the upper electrode R70 and the lower electrode R50.
When a direct current electric field is applied to the upper surface and the lower surface of the piezoelectric film of the oscillating device sheet body R60 through the upper electrode R70 and the lower electrode R50, the vertical deformation of the piezoelectric film changes with the magnitude of the electric field; when the direction of the electric field is opposite, the vertical deformation (expansion or contraction) of the piezoelectric film material is changed. When an alternating current electric field is added, the vertical deformation of the piezoelectric film can be changed along with the positive half period and the negative half period of the electric field in a contraction or expansion interaction manner, and longitudinal bulk acoustic waves which are transmitted along the C-axis direction R1 are formed; the longitudinal sound wave is transmitted to the interface between the upper electrode and the lower electrode and the air and is reflected back and forth in the film to form oscillation; when longitudinal sound waves propagate in the piezoelectric film just to be odd times of half wavelength, standing wave oscillation is generated.
However, while the longitudinal sound wave propagates through the piezoelectric film, the deformation perpendicular to the thickness generates a deformation in the horizontal direction R2 due to the physical poisson effect of the piezoelectric film, so that a transverse parasitic wave is generated in the piezoelectric film, and propagates in the horizontal direction until the cavity boundary R102 where the lower cavity R30 meets the oscillating device sheet R100 and the boundary R101 of the piezoelectric sensing sheet R60 continue to propagate in the reverse direction R2 after being reflected, and if the transverse parasitic wave also generates an additional standing wave which becomes a noise wave, not only energy loss is caused, but also a longitudinal noise standing wave is excited due to the physical poisson effect, so that the quality factor, i.e., the Q value, of the BAWR is greatly affected. Meanwhile, the sound wave propagates in the piezoelectric film and causes the horizontal deformation and oscillation of the upper and lower electrode films, propagates, reflects and even generates an induced standing wave, and may cause another secondary sound wave or standing wave in the sound wave piezoelectric film again, thereby further affecting the quality factor.
Therefore, how to suppress the crosstalk influence of the BAWR transverse parasitic wave on the longitudinal bulk acoustic wave signal along the C-axis direction, especially to solve the problems of transverse resonant waves and their reflections caused in the piezoelectric film and the upper and lower electrodes, and at the same time to reduce the energy consumption of the acoustic wave propagating to the outside of the oscillating device chip to the maximum, and to achieve the connection with the external input/output electric signal source, has become a focus of attention in the industry.
Disclosure of Invention
The invention aims to provide a film bulk acoustic resonator and a manufacturing method thereof, which solve the problem that the film bulk acoustic resonator in the prior art has elastic reflected waves in the horizontal direction.
In order to solve the above technical problem, the present invention provides a film bulk acoustic resonator, including:
the first substrate and the second substrate which are stacked up and down respectively comprise a first cavity and a second cavity which are opposite to each other, and a cavity overlapping area which is overlapped with each other is formed;
the first electrode sheet body and the second electrode sheet body are sequentially arranged between the first substrate and the second substrate, and an electrode overlapping area is formed in the cavity overlapping area;
the piezoelectric induction oscillation sheet is arranged between the first cavity and the second cavity and contained in the electrode overlapping area;
wherein, within the cavity overlap region and outside the electrode overlap region, first electrode lamellar body and second electrode lamellar body contain first vibrations buffering strip and second vibrations buffering strip respectively, first vibrations buffering strip and second vibrations buffering strip all have electric conductivity to reduce respectively along the bounce-back rigidity of the horizontal body vibration wave of first electrode lamellar body and second electrode lamellar body propagation.
Optionally, for the film bulk acoustic resonator, the first vibration buffer strip or the second vibration buffer strip is a ridge strip that is locally and vertically raised in the vertical direction and is formed by the first electrode sheet body or the second electrode sheet body.
Optionally, for the film bulk acoustic resonator, the ridge stripe locally and vertically raised in the vertical direction is composed of vertically raised micro-stripes which are cut apart one by one.
Optionally, for the film bulk acoustic resonator, the width of each vertical raised micro-strip is 0.01-10 μm, the height of each vertical raised micro-strip is 0.1-10 μm, and the distance between adjacent vertical raised micro-strips is 0.01-10 μm.
Optionally, for the film bulk acoustic resonator, the electrode overlapping region is a polygon that does not include mutually parallel opposite sides.
Optionally, for the thin film bulk acoustic resonator, the first vibration buffer stripes are not overlapped with the second electrode sheet body, and the second vibration buffer stripes are not overlapped with the first electrode sheet body.
Optionally, for the film bulk acoustic resonator, the material of the piezoelectric induction oscillation piece includes at least one of an oxide, a nitride, and a carbide.
Optionally, for the film bulk acoustic resonator, the material of the piezoelectric induction oscillation piece includes at least one of a piezoelectric crystal or a piezoelectric ceramic.
Optionally, for the thin film bulk acoustic resonator, the piezoelectric crystal material includes at least one of quartz, lithium gallate, lithium germanate, titanium germanate, lithium niobate, lithium tantalate, aluminum nitride, zinc oxide, and trabecite.
Optionally, for the film bulk acoustic resonator, the material of the first electrode sheet and the second electrode sheet includes at least one of metal aluminum, copper, nickel, tungsten, titanium, molybdenum, silver, gold, platinum, and alloys thereof.
The invention also provides a method for manufacturing the film bulk acoustic resonator, which comprises the following steps:
providing a first substrate, wherein a first cavity is formed on one side of the first substrate;
providing a sacrificial substrate, wherein a groove is formed in one side of the sacrificial substrate, and the groove is annularly surrounded;
sequentially forming a second conductive film, a piezoelectric induction film and a first conductive film on the sacrificial substrate, so that the first conductive film and the second conductive film both form a recess facing the groove;
etching the first conductive film and the piezoelectric induction film on one side, and exposing a part of the second conductive film and a part of the recess of the second conductive film to form a first electrode sheet body;
bonding the first substrate and the sacrificial substrate, wherein the first electrode sheet body faces the first cavity, the exposed part of the recess of the second conductive film and the exposed part of the recess of the first conductive film face the first cavity, and the recess of the first conductive film and the recess of the second conductive film are far away from the first cavity to form a protrusion;
removing the sacrificial substrate;
etching the second conductive film and the piezoelectric induction film at the other side opposite to the one side, exposing a part of the first conductive film and the bulge of the first conductive film to form a second electrode sheet body and a piezoelectric induction oscillation sheet, wherein the first electrode sheet body and the second electrode sheet body form an electrode overlapping region;
providing a second substrate, wherein a second cavity is formed on one side of the second substrate; and
bonding the second substrate with the first substrate, wherein the second electrode sheet faces the second cavity; the first cavity and the second cavity form a cavity overlapping region which overlaps with each other; the protrusions of the first conductive film and the protrusions of the second conductive film are located inside the cavity overlapping area and outside the electrode overlapping area, and respectively become a first vibration buffer strip and a second vibration buffer strip of the first electrode sheet and the second electrode sheet, and respectively reduce the rebound stiffness of the horizontal body vibration wave propagated along the first electrode sheet and the second electrode sheet.
Optionally, for the manufacturing method of the film bulk acoustic resonator, the first vibration buffer strip or the second vibration buffer strip is a ridge strip which is locally and vertically protruded in the vertical direction and is formed by the first electrode sheet body or the second electrode sheet body.
Optionally, with respect to the method for manufacturing the film bulk acoustic resonator, after the protrusion of the first conductive film and before the providing of the second substrate, the method further includes: and patterning the protrusions of the first conductive film and the protrusions of the second conductive film to form the vertical raised micro-bars which are cut apart.
Optionally, in the method for manufacturing the film bulk acoustic resonator, the width of each vertical raised micro-strip is 0.01 to 10 μm, the height of each vertical raised micro-strip is 0.1 to 10 μm, and the distance between adjacent vertical raised micro-strips is 0.01 to 10 μm.
Optionally, with respect to the manufacturing method of the film bulk acoustic resonator, the electrode overlapping region is a polygon that does not include mutually parallel opposite sides.
Optionally, for the method for manufacturing the film bulk acoustic resonator, a second temperature compensation film bulk is further formed between the sacrificial substrate and the second conductive film, and a first temperature compensation film bulk is further formed on the first conductive film; and when the first conductive film and the piezoelectric induction film are etched, the first temperature compensation film body is etched first, and when the second conductive film and the piezoelectric induction film are etched, the second temperature compensation film body is etched first.
Optionally, with respect to the manufacturing method of the film bulk acoustic resonator, the protrusion of the first electrode sheet body is not overlapped with the second electrode sheet body, and the protrusion of the second electrode sheet body is not overlapped with the first electrode sheet body.
Compared with the prior art, the film bulk acoustic resonator and the manufacturing method thereof provided by the invention have the following advantages:
within the cavity overlap region and outside the electrode overlap region, first electrode lamellar body and second electrode lamellar body contain first vibrations buffering strip and second vibrations buffering strip respectively, can reduce the rigidity (reinforcing flexibility) of horizontal direction effectively, and influence the rigidity of vertical direction less, to the horizontal elastic wave that the horizontal direction propagated along the electrode slice, play a cushioning effect to reduce the intensity of elastic reflection wave.
Further, the ridge stripe locally and vertically protruded in the vertical direction is composed of vertically protruded micro stripes which are cut apart one by one. On the premise of ensuring that the conductive performance is not influenced, the intensity of the elastic reflected wave in the horizontal direction can be further reduced.
In addition, the piezoelectric induction oscillation piece clamped between the first electrode piece body and the second electrode piece body is integrally arranged in the cavity overlapping area, the boundary of the piezoelectric induction oscillation piece is a polygon without any parallel opposite sides, the additional standing wave oscillation which becomes noise waves in the horizontal direction is eliminated, and meanwhile, the energy consumed by transverse parasitic waves is reduced to the maximum extent.
Drawings
FIG. 1 is a schematic structural diagram of a vacuum sealed film bulk acoustic resonator of the prior art;
FIGS. 2a and 2b are theoretical diagrams illustrating the study of a film bulk acoustic resonator according to the present invention;
FIG. 3 is a schematic top view of a film bulk acoustic resonator according to an embodiment of the present invention;
FIG. 4 is a schematic cross-sectional view of a film bulk acoustic resonator according to an embodiment of the present invention;
FIG. 5 is a flow chart of a method of fabricating a film bulk acoustic resonator according to an embodiment of the present invention;
6-14 are schematic structural diagrams of thin film bulk acoustic resonators at different steps in the fabrication process according to various embodiments of the present invention;
in the figure, the position of the upper end of the main shaft,
r10-thin film bulk acoustic resonator;
r100-oscillating device sheet body;
r101-boundary;
r20-substrate;
r30-an insulating sheet;
r40-lower cavity;
r50-lower electrode;
r60-piezoelectric induction sheet;
r70-upper electrode;
r90-vias;
100-a first substrate;
11-electrode overlap region;
15-cavity overlap region;
110-a first sheet of insulating material;
115-a first cavity;
160-a dielectric layer;
201-a first conductive film;
202-a second conductive film;
2021-dishing;
205-piezoelectric sensing film;
210-a second sheet of insulating material;
211-a first electrode sheet;
2111-first shock bumper strip;
2112-gap;
212-a second electrode sheet;
2121-a second shock buffering strip;
215-a second cavity;
221-piezoelectric induction oscillation piece;
261-a first electrode cavity;
262-a second electrode cavity;
300-a sacrificial substrate;
301-grooves;
310-a sheet of sacrificial insulating material;
53-boundary.
Detailed Description
The thin film bulk acoustic resonator and the method of manufacturing the same according to the present invention will be described in more detail with reference to the accompanying schematic drawings, in which preferred embodiments of the invention are shown, and it is to be understood that those skilled in the art can modify the invention described herein while still achieving the advantageous effects of the invention. Accordingly, the following description should be construed as broadly as possible to those skilled in the art and not as limiting the invention.
The invention is described in more detail in the following paragraphs by way of example with reference to the accompanying drawings. Advantages and features of the present invention will become apparent from the following description and from the claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
In the description that follows, it will be understood that when a layer (or film), sheet, region, pattern, or structure is referred to as being "on" a substrate, layer (or film), sheet, region, pad, and/or pattern, it can be directly on another layer or substrate, and/or intervening layers may also be present. In addition, it will be understood that when a layer is referred to as being "under" another layer, it can be directly under the other layer, and/or one or more intervening layers may also be present. In addition, references to "on" and "under" layers may be made based on the drawings.
After long-term theory and experimental analysis, the inventor believes that theoretically, the most ideal Bulk Acoustic Wave Resonator (BAWR) device design should be as shown in fig. 2a and fig. 2b, and the whole oscillating device sheet is formed by bonding three thin film sheets of the same size, namely, an upper electrode R70 and a lower electrode R50, and a piezoelectric sensing sheet R60 located between the upper electrode R70 and the lower electrode R50, and the upper surface and the lower surface of the oscillating device sheet R100 are both aerial in air and vacuum; with this, all the electric power applied to the piezoelectric sensing piece R60 through the upper electrode R70 and the lower electrode R50 is reflected to the maximum extent by the elastic fluctuation of the upper electrode R70 and the lower electrode R50 placed inside and above the piezoelectric sensing piece R60 to reduce the power consumption of the acoustic wave propagating out of the oscillating device piece, especially the lateral parasitic wave propagating out of the oscillating device piece in the horizontal direction. Meanwhile, referring to fig. 2b, the shape of the whole oscillating device sheet should be a polygon without any parallel opposite sides, so that standing wave oscillation that may be caused by the transverse parasitic wave reflected back and forth at the boundary at any point on the piezoelectric sensing piece R60 can be effectively eliminated.
However, such an ideal Bulk Acoustic Wave Resonator (BAWR) device is not practically feasible because the oscillating device body needs to be supported in some way on the one hand, and the upper electrode R70 and the lower electrode R50 need to be connected to an external input/output electrical signal source.
The main idea of the present invention is to provide a film bulk acoustic resonator, as shown in fig. 3 and 4, comprising:
the first substrate and the second substrate which are stacked up and down respectively comprise a first cavity 115 and a second cavity 215 which are opposite to each other, and a cavity overlapping area 15 which is overlapped with each other is formed;
a first electrode sheet 211 and a second electrode sheet 212 sequentially disposed between the first substrate and the second substrate, wherein an electrode overlapping region 11 is formed in the cavity overlapping region 15;
a piezoelectric induction oscillating piece 221 disposed between the first cavity 115 and the second cavity 215 and included in the electrode overlapping region 11;
wherein, inside the cavity overlapping region 15 and outside the electrode overlapping region 11, the first electrode sheet body 211 and the second electrode sheet body 212 respectively include a first shock buffer strip 2111 and a second shock buffer strip 2121, and the first shock buffer strip 2111 and the second shock buffer strip 2121 both have electrical conductivity and reduce the rebound stiffness of the horizontal body vibration wave propagating along the first electrode sheet body 211 and the second electrode sheet body 212, respectively.
By including the first vibration damping strip 2111 and the second vibration damping strip 2121 in the cavity overlapping region 15 and outside the electrode overlapping region 11, respectively, the first electrode sheet body 211 and the second electrode sheet body 212 can effectively reduce the stiffness in the horizontal direction (enhance flexibility), and affect the stiffness in the vertical direction, and play a role of buffering the horizontal elastic wave propagating along the electrode sheet in the horizontal direction, thereby reducing the intensity of the elastic reflected wave.
Furthermore, the first vibration buffer strip (2111) or the second vibration buffer strip (2121) respectively comprises a ridge strip which is locally and vertically raised in the vertical direction and is formed by the first electrode sheet body (211) or the second electrode sheet body (212). The ridge strip locally and vertically raised in the vertical direction is composed of vertically raised micro strips which are cut and separated one by one. On the premise of ensuring that the conductive performance is not influenced, the intensity of the elastic reflected wave in the horizontal direction can be further reduced.
For example, each of the vertical bump micro-bars has a width W1 of 0.01 to 10 μm, such as 0.02 μm, 0.05 μm, 0.08 μm, 0.1 μm, 0.5 μm, 1 μm, 3 μm, 5 μm, etc., a height H of 0.1 to 10 μm, such as 0.5 μm, 1 μm, 3 μm, 5 μm, etc., and a pitch W2 of adjacent vertical bump micro-bars is 0.01 to 10 μm, such as 0.02 μm, 0.05 μm, 0.08 μm, 0.1 μm, 0.5 μm, 1 μm, 3 μm, 5 μm, etc. Based on the parameter design, the intensity of the elastic reflected wave in the horizontal direction can be better reduced.
The vertical bumps do not completely limit the side walls of the vibration buffer strips to be perpendicular to the horizontal direction (i.e., the extending direction of the first electrode sheet body 211), and only the protruding direction of the whole vibration buffer strips is perpendicular (or substantially perpendicular) to the horizontal direction.
In addition, the piezoelectric induction oscillation piece 221 sandwiched between the first electrode piece body 211 and the second electrode piece body 212 is disposed in the cavity overlapping region 15 as a whole, and the boundary thereof is a polygon without any mutually parallel opposite sides, so that not only the additional standing wave oscillation which becomes a noise wave in the horizontal direction is eliminated, but also the energy consumed by the lateral parasitic wave is reduced to the maximum extent.
In one embodiment, the material of the piezoelectric induction oscillation piece 221 includes at least one of oxide, nitride, and carbide.
In one embodiment, the material of the piezoelectric induction oscillation piece 221 includes at least one of a piezoelectric crystal or a piezoelectric ceramic.
In one embodiment, the piezoelectric crystal material comprises at least one of quartz, lithium gallate, lithium germanate, titanium germanate, lithium niobate, lithium tantalate, aluminum nitride, zinc oxide, and plumbum-zinc sphene.
In one embodiment, the material of the first electrode sheet 211 and the second electrode sheet 212 includes at least one of metal aluminum, copper, nickel, tungsten, titanium, molybdenum, silver, gold, platinum and alloys thereof.
In order to realize the film bulk acoustic resonator of the present invention, as shown in fig. 5, the manufacturing method includes:
step S11, providing a first substrate, wherein a first cavity is formed on one side of the first substrate;
step S12, providing a sacrificial substrate, wherein a groove is formed on one side of the sacrificial substrate and surrounds the sacrificial substrate to form a ring shape;
step S13, sequentially forming a second conductive film, a piezoelectric sensing film, and a first conductive film on the sacrificial substrate, such that the first conductive film and the first conductive film both form a recess facing the groove;
step S14, etching the first conductive film and the piezoelectric sensing film on one side to expose part of the second conductive film and part of the second conductive film to form a first electrode sheet body;
step S15, bonding the first substrate and the sacrificial substrate, where the first electrode sheet faces the first cavity, and the exposed portion of the recess of the second conductive film and the exposed portion of the recess of the first conductive film face the first cavity, so that the recess of the first conductive film and the recess of the second conductive film are away from the first cavity and become protrusions;
step S16, removing the sacrificial substrate;
step S17, etching the second conductive film and the piezoelectric induction film at the other side opposite to the one side, exposing a part of the first conductive film and the bulge of the first conductive film, forming a second electrode sheet body and a piezoelectric induction oscillation sheet, wherein the first electrode sheet body and the second electrode sheet body form an electrode overlapping area;
step S18, providing a second substrate, wherein a second cavity is formed on one side of the second substrate; and
step S19, bonding the second substrate and the first substrate, with the second electrode sheet facing the second cavity; the first cavity and the second cavity form a cavity overlapping region which overlaps with each other; the protrusions of the first conductive film and the protrusions of the second conductive film are located inside the cavity overlapping area and outside the electrode overlapping area, and respectively become a first vibration buffer strip and a second vibration buffer strip of the first electrode sheet and the second electrode sheet, and respectively reduce the rebound stiffness of the horizontal body vibration wave propagated along the first electrode sheet and the second electrode sheet.
Specifically, referring to fig. 4, for step S11, a first substrate is provided, and a first cavity 115 is formed on one side of the first substrate. In one embodiment, the first substrate comprises a first substrate 100, a first sheet of insulating material 110 is formed on the first substrate 100, and a first cavity 115 is formed in the first sheet of insulating material 110 on a side facing away from the first substrate 100. The first substrate 100 is selected as known by those skilled in the art, for example, the first substrate 100 may be a single crystal silicon substrate, a silicon germanium substrate, a germanium substrate, or a substrate made of other semiconductor materials known by those skilled in the art, and the first substrate 100 may have a buried layer or the like therein or a well region or the like formed by ion implantation, as required. Also for example, in one embodiment of the present invention, active devices including CMOS and electrical interconnects may also be formed on the substrate 100.
In one embodiment, the material of the first sheet of insulating material 110 includes at least one of oxide, nitride, and carbide. Examples of the material include, but are not limited to, silicon oxide, silicon nitride, silicon carbide, and silicon oxynitride.
In one embodiment, taking silicon oxide as an example, the first sheet of insulating material 110 can be formed by a Chemical Vapor Deposition (CVD) process, and can be formed by thermal oxidation, for example.
The first cavity 115 may be formed by wet etching and/or dry etching, and the specific shape of the first cavity 115 is not limited, and may be, for example, a rectangle, or another polygon; the size of the first cavity 115 is not limited, such as height, side length, occupied area, etc., and can be set by those skilled in the art according to actual requirements.
Referring to fig. 7, for step S12, a sacrificial substrate is provided, and a groove 301 is formed on one side of the sacrificial substrate and surrounds the sacrificial substrate in a ring shape. In one embodiment, the sacrificial substrate comprises a sacrificial substrate 300, a body 310 of sacrificial insulating material is formed on the sacrificial substrate 300, and a groove 301 is formed in the body 310 of sacrificial insulating material on a side facing away from the sacrificial substrate 300. The sacrificial substrate 300 may be a common substrate, for example, the same material as the first substrate 100, but the sacrificial substrate 300 may not have a structure including CMOS active devices and electrical interconnects.
For example, the material of the sacrificial insulating material body 310 includes at least one of oxide, nitride, and carbide. The material may be silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, or the like, but is not limited thereto.
The groove may be one or more, for example a plurality of grooves, annularly surrounding. In this embodiment, one groove is taken as an example for explanation.
Referring to fig. 7, for step S13, a second conductive film 202, a piezoelectric sensing film 205, and a first conductive film 201 are sequentially formed on the sacrificial substrate, such that the first conductive film 201 and the second conductive film 202 both form a recess 2021 facing the groove 301 (as shown in fig. 9).
In one embodiment, the material of the first conductive film 201 and the second conductive film 202 includes at least one of aluminum, copper, nickel, tungsten, titanium, molybdenum, silver, gold, platinum and their alloys.
In one embodiment, the material of the piezoelectric sensing thin film 205 includes at least one of oxide, nitride, and carbide. The material of the piezoelectric sensing thin film 205 includes at least one of piezoelectric crystal or piezoelectric ceramic, such as at least one of quartz, lithium gallate, lithium germanate, titanium germanate, lithium niobate, lithium tantalate, aluminum nitride, zinc oxide, and lead-zinc sphene.
Then, the second conductive film 202, the piezoelectric sensing film 205 and the first conductive film 201 can be corrected according to actual needs, and adjusted to a required basic pattern range, so that the portion with poor edge quality can be removed conveniently.
Next, referring to fig. 8, in step S14, the first conductive film 201 and the piezoelectric sensing film 205 are etched on one side to expose a portion of the second conductive film 202 and a portion of the recess of the second conductive film 202, so as to form a first electrode sheet 211. On the exposed portion of the second conductive film 202 is a first electrode cavity 261 that serves as a boundary defining a portion of the piezoelectric sensing patch to be formed.
Specifically, the method comprises the following steps: etching and removing one side of the first conductive film 201 to expose a part of the piezoelectric sensing film 205, and forming the first electrode sheet body 211. The etching removal can be performed by dry etching or chemical etching.
In etching the first conductive film, for example, for wet etching, a photoresist may be used as a mask, and in particular, the photoresist is patterned, for example, the patterned photoresist has a plurality of non-parallel edges where the first conductive film is exposed.
After the etching of the first conductive film is completed, the piezoelectric sensing film 205 is continuously etched to expose the second conductive film 202. At this time, the photoresist or the etched first conductive film may be used as a mask for etching the piezoelectric sensing film 205.
After this step, on the one hand, the first electrode sheet 211 is completely prepared; on the other hand, a recess of a portion of the second conductive film 202 is exposed, and the recess is then transformed into a second shock buffering strip 2121 (as shown in fig. 4), and in addition, a portion of the structure (including the first conductive film 201, the piezoelectric sensing film 205, and the second conductive film 202) away from the groove on the side of the first electrode cavity 261 can also be used as a boundary mechanical support, which is embodied when a second substrate is provided for bonding.
Then, referring to fig. 10, in step S15, the first substrate and the sacrificial substrate are bonded, the first electrode sheet 211 faces the first cavity 115, and the exposed portion of the recess of the second conductive film 202 and the recess of the first conductive film 201 face the first cavity 115, so that the recess of the first conductive film and the recess of the second conductive film are protruded away from the first cavity 115.
The bonding process can be performed using conventional techniques and is not described in detail herein.
In one embodiment, after bonding, a portion of the perpendicular projection of the first electrode cavity on the first substrate 100 falls within a perpendicular projection range of the first cavity 115 on the first substrate 100, and a portion may fall outside the range. That is, for one side of etching, the first cavity boundary of the first cavity 115 may fall on the first electrode cavity, and for the other side where it is not etched, the recess of the first conductive film 201 completely falls in the boundary of the first cavity 115.
After bonding is completed, step S16 is performed to remove the sacrificial substrate. Fig. 10 may be a schematic diagram of the sacrificial substrate after being removed.
The removal of the sacrificial substrate may be carried out by conventional means. Such as chemical methods, which may be etching of the sacrificial insulating material sheet 310, or physical methods, which may take the form of grinding, cutting, etc.
In one embodiment, for the case where a sacrificial insulative material bulk 310 is present, after the sacrificial substrate is removed, the sacrificial insulative material bulk 310 is also removed.
Thereafter, with reference to fig. 10, in step S17, the second conductive film 202 and the piezoelectric sensing film 205 are etched at the other side opposite to the one side, a portion of the first conductive film 201 and the protrusion of the first conductive film are exposed, a second electrode sheet body 212 and a piezoelectric sensing oscillation sheet 221 are formed, and the first electrode sheet body 211 and the second electrode sheet body 212 form an electrode overlapping region. On the exposed portion of the first conductive film 201 is a second electrode cavity 262 that serves as a boundary defining a portion of the piezoelectric sensing patch to be formed.
This step may be similar to the etching of step S14, and those skilled in the art will be familiar with this operation, and will not be repeated here.
After this step, on the one hand, the second electrode sheet body 212 is prepared; on the other hand, a recess exposing a portion of the first conductive film 201 is transformed into a first shock buffering strip 2111 (as shown in fig. 4), and a portion of the structure (including the first conductive film 201, the piezoelectric sensing film 205, and the second conductive film 202) away from the recess on the side of the second electrode cavity 262 may also serve as a boundary mechanical support and may be embodied when a second substrate is provided for bonding.
The protrusions of the first conductive film and the protrusions of the second conductive film become the first vibration damping strip 2111 and the second vibration damping strip 2121 of the first electrode sheet body 211 and the second electrode sheet body 212, respectively, and reduce the rebound stiffness of the horizontal body vibration wave propagated along the first electrode sheet body 211 and the second electrode sheet body 212, respectively.
In one embodiment, the first shock buffering stripes 2111 do not overlap the second electrode sheet body 212, and the second shock buffering stripes 2121 do not overlap the first electrode sheet body 211 (as shown in fig. 3).
In one embodiment, the first or second shock absorbing stripe 2111 or 2121 is formed as a ridge stripe locally and vertically raised in the vertical direction by the first or second electrode sheet body 211 or 212, respectively.
Further, the ridge stripe locally and vertically protruded in the vertical direction is composed of vertically protruded micro stripes which are cut apart one by one.
To implement this structure, after step S15, the method may further include: and patterning the protrusions of the first conductive film and the protrusions of the second conductive film to form the vertical raised micro-bars which are cut apart.
The patterning process may be accomplished by photolithographic etching.
In one embodiment, as shown in FIG. 11, each of the vertical bump micro-bars has a width W1 of 0.01-10 μm, such as 0.02 μm, 0.05 μm, 0.08 μm, 0.1 μm, 0.5 μm, 1 μm, 3 μm, 5 μm, etc., a height H of 0.1-10 μm, such as 0.5 μm, 1 μm, 3 μm, 5 μm, etc., and a pitch W2 of 0.01-10 μm, such as 0.02 μm, 0.05 μm, 0.08 μm, 0.1 μm, 0.5 μm, 1 μm, 3 μm, 5 μm, etc., between adjacent vertical bump micro-bars.
In one embodiment, the electrode overlap region 11 is a polygon that does not include parallel opposing sides. The boundary of the piezoelectric induction oscillation piece 221 sandwiched between the first electrode piece body 211 and the second electrode piece body 212 is also a polygon without any parallel opposite sides, which not only eliminates additional standing wave oscillation that becomes noise in the horizontal direction, but also reduces the energy consumed by lateral parasitic waves to the maximum extent.
Thereafter, referring to fig. 13 and 14, for step S18, a second substrate is provided, and a second cavity is formed on one side of the second substrate.
In one embodiment, the second substrate may include, for example, a second substrate (not shown) and a second sheet of insulating material 210; the second sheet of insulating material 210 can be prepared on a second substrate (not shown).
A second cavity 215 is formed in the second sheet of insulating material 210.
In one embodiment, the second cavity 215 is substantially identical to the first cavity 115.
Fig. 13 and 14 are schematic cross-sectional views along X-X and Y-Y directions in fig. 3, respectively, to more clearly illustrate the technical solution of the present invention.
Thereafter, with continued reference to fig. 13 and 14, for step S19, the second substrate is bonded to the first substrate, and the second electrode sheet 212 faces the second cavity 215; the first cavity 115 and the second cavity 115 form a cavity overlap region 15 that overlaps each other; the protrusions of the first conductive film and the protrusions of the second conductive film are inside the cavity overlapping region 15 and outside the electrode overlapping region 11, become the first vibration damping strip 2111 and the second vibration damping strip 2121 of the first electrode sheet body 211 and the second electrode sheet body 212, respectively, and reduce the rebound stiffness of the horizontal body vibration wave propagating along the first electrode sheet body 211 and the second electrode sheet body 212, respectively.
As shown in fig. 14, since there is no support member at Y-Y, a dielectric layer 160 can be formed on the first substrate 100, thereby facilitating the smooth completion of the bonding process and protecting the oscillation sheet body and the electrode sheet body inside the thin film bulk acoustic resonator.
In one embodiment, the method for manufacturing the film bulk acoustic resonator further includes forming a second temperature compensation film bulk (not shown) between the sacrificial substrate 300 and the second conductive film 202, and forming a first temperature compensation film bulk (not shown) on the first conductive film 201; this step may be completed in step S13 as shown in fig. 7.
Correspondingly, the first temperature compensation film body is etched first when the first conductive film 201 and the piezoelectric sensing film 205 are etched, and the second temperature compensation film body is etched first when the second conductive film 201 and the piezoelectric sensing film 205 are etched. In this regard, one skilled in the art will be able to know and perform properly.
Compared with the prior art, the film bulk acoustic resonator and the manufacturing method thereof provided by the invention have the following advantages:
within the cavity overlap region and outside the electrode overlap region, first electrode lamellar body and second electrode lamellar body contain first vibrations buffering strip and second vibrations buffering strip respectively, can reduce the rigidity (reinforcing flexibility) of horizontal direction effectively, and influence the rigidity of vertical direction less, to the horizontal elastic wave that the horizontal direction propagated along the electrode slice, play a cushioning effect to reduce the intensity of elastic reflection wave.
Further, the ridge stripe locally and vertically protruded in the vertical direction is composed of vertically protruded micro stripes which are cut apart one by one. On the premise of ensuring that the conductive performance is not influenced, the intensity of the elastic reflected wave in the horizontal direction can be further reduced.
In addition, the piezoelectric induction oscillation piece clamped between the first electrode piece body and the second electrode piece body is integrally arranged in the cavity overlapping area, the boundary of the piezoelectric induction oscillation piece is a polygon without any parallel opposite sides, the additional standing wave oscillation which becomes noise waves in the horizontal direction is eliminated, and meanwhile, the energy consumed by transverse parasitic waves is reduced to the maximum extent.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (17)
1. A thin film bulk acoustic resonator comprising:
the first substrate and the second substrate which are stacked up and down respectively comprise a first cavity (115) and a second cavity (215) which are opposite, and a cavity overlapping area (15) which is overlapped with each other is formed;
a first electrode sheet body (211) and a second electrode sheet body (212) which are sequentially arranged between the first substrate and the second substrate, wherein an electrode overlapping area (11) is formed in the cavity overlapping area (15);
a piezoelectric induction oscillator piece (221) disposed between the first cavity (115) and the second cavity (215) and contained within the electrode overlap region (11);
wherein, inside the cavity overlap region (15) and outside the electrode overlap region (11), the first electrode sheet body (211) and the second electrode sheet body (212) respectively comprise a first shock buffer strip (2111) and a second shock buffer strip (2121), the first shock buffer strip (115) and the second shock buffer strip (125) both have electrical conductivity and respectively reduce the rebound stiffness of a horizontal body vibration wave propagating along the first electrode sheet body (211) and the second electrode sheet body (212).
2. The thin film bulk acoustic resonator according to claim 1, characterized in that the first vibration damping stripe (2111) or the second vibration damping stripe (2121) is constituted by a ridge stripe locally raised vertically in the vertical direction by the first electrode plate body (211) or the second electrode plate body (212), respectively.
3. The film bulk acoustic resonator of claim 2, wherein the ridge stripe locally vertically raised in the vertical direction is composed of vertically raised micro-stripes cut apart one by one.
4. The film bulk acoustic resonator according to claim 1, wherein each of the vertical raised micro-strips has a width of 0.01 to 10 μm, a height of 0.1 to 10 μm, and a pitch between adjacent vertical raised micro-strips is 0.01 to 10 μm.
5. The film bulk acoustic resonator according to claim 1, characterized in that the electrode overlapping area (11) is a polygon not comprising mutually parallel opposite sides.
6. The thin film bulk acoustic resonator of claim 1, wherein the first shock buffer strip does not overlap the second electrode body, and the second shock buffer strip does not overlap the first electrode body.
7. The film bulk acoustic resonator according to claim 1, wherein the material of the piezoelectric induction oscillator piece (221) comprises at least one of an oxide, a nitride, and a carbide.
8. The film bulk acoustic resonator according to claim 1, wherein the material of the piezoelectric induced vibration plate (221) comprises at least one of a piezoelectric crystal or a piezoelectric ceramic.
9. The thin film bulk acoustic resonator of claim 8, wherein the piezoelectric crystal material comprises at least one of quartz, lithium gallate, lithium germanate, titanium germanate, lithium niobate, lithium tantalate, aluminum nitride, zinc oxide, and lead zinc sphene.
10. The thin film bulk acoustic resonator according to claim 1, wherein a material of the first electrode sheet (211) and the second electrode sheet (212) includes at least one of metal aluminum, copper, nickel, tungsten, titanium, molybdenum, silver, gold, platinum, and an alloy thereof.
11. A method of manufacturing a thin film bulk acoustic resonator, comprising:
providing a first substrate, one side of which forms a first cavity (115);
providing a sacrificial substrate, wherein a groove is formed in one side of the sacrificial substrate, and the groove is annularly surrounded;
sequentially forming a second conductive film (202), a piezoelectric induction film (205) and a first conductive film (201) on the sacrificial substrate, so that the first conductive film and the second conductive film both form a recess facing the groove;
etching the first conductive film (201) and the piezoelectric induction film (205) on one side, exposing a part of the second conductive film and a part of the recess of the second conductive film, and forming a first electrode sheet body (211);
bonding the first substrate and the sacrificial substrate, wherein the first electrode sheet body (211) faces the first cavity, the exposed part of the recess of the second conductive film and the recess of the first conductive film face the first cavity, and the recess of the first conductive film and the recess of the second conductive film are far away from the first cavity to form a protrusion;
removing the sacrificial substrate;
etching the second conductive film (201) and the piezoelectric induction film (205) at the other side opposite to the one side, exposing a part of the first conductive film and the bulge of the first conductive film, and forming a second electrode sheet body (212) and a piezoelectric induction oscillation sheet (221), wherein the first electrode sheet body and the second electrode sheet body form an electrode overlapping region (11);
providing a second substrate, one side of the second substrate forming a second cavity (215); and
bonding the second substrate to the first substrate with the second electrode sheet (212) facing the second cavity; the first cavity (115) and the second cavity (215) form a cavity overlap region (15) overlapping each other; the protrusions of the first conductive film and the protrusions of the second conductive film are inside the cavity overlapping region (15) and outside the electrode overlapping region (11), and become a first vibration damping strip (2111) and a second vibration damping strip (2121) of the first electrode sheet body (211) and the second electrode sheet body (212), respectively, and reduce the rebound stiffness of the horizontal body vibration wave propagating along the first electrode sheet body (211) and the second electrode sheet body (212), respectively.
12. The method of manufacturing a thin film bulk acoustic resonator according to claim 11, wherein the first vibration damping stripe (2111) or the second vibration damping stripe (2121) is constituted by a ridge stripe locally raised vertically in the vertical direction by the first electrode sheet body (211) or the second electrode sheet body (212), respectively.
13. The method of manufacturing a thin film bulk acoustic resonator according to claim 12, further comprising, after the raising of the first conductive film and before the providing of the second substrate: and patterning the protrusions of the first conductive film and the protrusions of the second conductive film to form the vertical raised micro-bars which are cut apart.
14. The method of manufacturing a film bulk acoustic resonator according to claim 13, wherein each of the vertical raised micro-strips has a width of 0.01 to 10 μm and a height of 0.1 to 10 μm, and a pitch between adjacent vertical raised micro-strips is 0.01 to 10 μm.
15. The method of manufacturing a thin film bulk acoustic resonator according to claim 11, wherein the electrode overlapping region (11) is a polygon not including mutually parallel opposite sides.
16. The method of manufacturing a thin film bulk acoustic resonator according to claim 11, wherein a second temperature compensation thin film bulk is further formed between the sacrificial substrate and the second conductive thin film (202), and a first temperature compensation thin film bulk is further formed on the first conductive thin film (201); when the first conductive film (201) and the piezoelectric sensing film (205) are etched, the first temperature compensation film body is etched first, and when the second conductive film (201) and the piezoelectric sensing film (205) are etched, the second temperature compensation film body is etched first.
17. The method of manufacturing a thin film bulk acoustic resonator according to claim 11, wherein the projections of the first electrode sheet do not overlap with the second electrode sheet, and the projections of the second electrode sheet do not overlap with the first electrode sheet.
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1163000A (en) * | 1994-09-09 | 1997-10-22 | 狄肯研究公司 | Display panel with electrically-controlled waveguide-routing |
| US20050151600A1 (en) * | 2002-05-23 | 2005-07-14 | Masaki Takeuchi | Piezoelectric thin-film resonator, piezoelectric filter, and electronic component including the piezoelectric filter |
| US20080100176A1 (en) * | 2006-11-01 | 2008-05-01 | Delaware Capital Formation Incorporated | High sensitivity microsensors based on flexure induced frequency effects |
| US20080163694A1 (en) * | 2006-11-01 | 2008-07-10 | Delaware Capital Formation Incorporated | High sensitivity acoustic wave microsensors based on stress effects |
| FR2977747A1 (en) * | 2011-07-08 | 2013-01-11 | Centre Nat Rech Scient | VOLUME RESONATOR OPERATING EXCITATION / DETECTING VIBRATION |
| CN106849897A (en) * | 2015-12-03 | 2017-06-13 | 上海珏芯光电科技有限公司 | FBAR and its manufacture method |
| US20180183406A1 (en) * | 2016-12-23 | 2018-06-28 | Avago Technologies General Ip (Singapore) Pte. Ltd | Packaged resonator with polymeric air cavity package |
| CN108365829A (en) * | 2017-03-24 | 2018-08-03 | 珠海晶讯聚震科技有限公司 | The preparation method of monocrystalline piezoelectric rf-resonator and filter |
-
2018
- 2018-08-07 CN CN201810893030.8A patent/CN110829997B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1163000A (en) * | 1994-09-09 | 1997-10-22 | 狄肯研究公司 | Display panel with electrically-controlled waveguide-routing |
| US20050151600A1 (en) * | 2002-05-23 | 2005-07-14 | Masaki Takeuchi | Piezoelectric thin-film resonator, piezoelectric filter, and electronic component including the piezoelectric filter |
| US20080100176A1 (en) * | 2006-11-01 | 2008-05-01 | Delaware Capital Formation Incorporated | High sensitivity microsensors based on flexure induced frequency effects |
| US20080163694A1 (en) * | 2006-11-01 | 2008-07-10 | Delaware Capital Formation Incorporated | High sensitivity acoustic wave microsensors based on stress effects |
| FR2977747A1 (en) * | 2011-07-08 | 2013-01-11 | Centre Nat Rech Scient | VOLUME RESONATOR OPERATING EXCITATION / DETECTING VIBRATION |
| CN106849897A (en) * | 2015-12-03 | 2017-06-13 | 上海珏芯光电科技有限公司 | FBAR and its manufacture method |
| US20180183406A1 (en) * | 2016-12-23 | 2018-06-28 | Avago Technologies General Ip (Singapore) Pte. Ltd | Packaged resonator with polymeric air cavity package |
| CN108365829A (en) * | 2017-03-24 | 2018-08-03 | 珠海晶讯聚震科技有限公司 | The preparation method of monocrystalline piezoelectric rf-resonator and filter |
Non-Patent Citations (2)
| Title |
|---|
| 胡靖华;孙晓冬;张凯;张小玲;胡光;顾豪爽;: "1.6 GHz薄膜体声波谐振器研究" * |
| 贺学锋;刘兴;印显方;温志渝;陈可万;: "一种提高薄膜体声波谐振器质量分辨率的主动控制方法" * |
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