CN208608966U - One kind combining resonator based on surface acoustic wave and cavity type film bulk acoustic - Google Patents
One kind combining resonator based on surface acoustic wave and cavity type film bulk acoustic Download PDFInfo
- Publication number
- CN208608966U CN208608966U CN201821978680.4U CN201821978680U CN208608966U CN 208608966 U CN208608966 U CN 208608966U CN 201821978680 U CN201821978680 U CN 201821978680U CN 208608966 U CN208608966 U CN 208608966U
- Authority
- CN
- China
- Prior art keywords
- piezoelectric
- resonator
- cavity
- film bulk
- acoustic wave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
One kind combining resonator based on surface acoustic wave and cavity type film bulk acoustic, and the combination resonator includes that the piezoelectric material substrate, the metal that stack gradually be interdigital, temperature compensating layer, piezoelectric unit；Wherein the metallic tines, which refer to, is formed in above the piezoelectric material substrate, it is interdigital that the temperature compensating layer covers the metal, the temperature compensating layer upper surface is provided with cavity and the cavity upper surface is covered by piezoelectric unit completely, the piezoelectric unit is formed in above the temperature compensating layer, the piezoelectric unit includes that first electrode, piezoelectric layer, second electrode are formed by stack architecture, wherein the first electrode is arranged above the cavity and the cavity is completely covered.What is proposed in the utility model combines resonator based on surface acoustic wave and cavity type film bulk acoustic, and SAW resonator is combined with cavity type thin film bulk acoustic wave resonator, and combination resonator is enabled effectively to play the performance advantage of two kinds of resonators.
Description
Technical field
The present invention relates to a kind of combination resonators, use temperature compensating type surface acoustic wave and cavity type more particularly to a kind of
The combination resonator of film bulk acoustic.
Background technique
With the development of wireless communication applications, requirement of the people for data transmission bauds is higher and higher.In mobile communication
Field, the first generation are analogue techniques, and the second generation realizes digitized voice communications, and the third generation (3G) is spy with multimedia communication
Sign, traffic rate is increased to 1Gbps by forth generation (4G), time delay is reduced to 10ms, and the 5th generation (5G) was a new generation after 4G
Mobile communication technology, although the technical specification of 5G is completely clear not yet with standard, compared with 3G, 4G, network transmission speed
Rate and network capacity will be substantially improved.If master is to solve interpersonal communication from 1G to 4G, 5G will solve people
With people and object except people, the communication between object and object, i.e. all things on earth interconnects, and realizes the hope of " information follow one's inclinations to, all things on earth tentacle and "
Scape.
With data transfer rate rise it is corresponding be frequency spectrum resource high usage and the complication of communications protocol.Due to frequency spectrum
It is limited, in order to meet the needs of data transfer rate, it is necessary to make full use of frequency spectrum；Simultaneously in order to meet the needs of data transfer rate, since 4G
Carrier aggregation technology is also used, an equipment is allowed to utilize different carrier spectrum transmission data simultaneously.On the other hand,
In order to support enough data transmission rates, communication protocol to become to become increasingly complex in limited bandwidth, therefore to radio frequency system
Various performances also proposed stringent demand.
In RF front-end module, radio-frequency filter is played a crucial role.It can be by out-of-band interference and noise
It filters out to meet the needs of radio frequency system and communications protocol are for signal-to-noise ratio.As communication protocol becomes increasingly complex, in frequency band
Outer requirement is also higher and higher, so that the design of filter increasingly has challenge.In addition, the frequency band number needed support with mobile phone
Mesh constantly rises, and the filter quantity for needing to use in every Mobile phone is also constantly rising.
Radio-frequency filter most mainstream is achieved in that SAW filter and based on thin film bulk acoustic wave resonator at present
The filter of technology.Thin film bulk acoustic wave resonator is mainly used for high frequency (such as the frequency range for being greater than 2.5GHz), and manufacturing process compares
Complexity, higher cost.And SAW filter is mainly used for middle low frequency (the such as less than frequency range of 2.5GHz), manufacturing process phase
To fairly simple, cost wants much lower compared to thin film bulk acoustic wave resonator, is easier to be received by market.
The structure and preparation method of temperature-compensating SAW resonator and thin film bulk acoustic wave resonator have had very much.With
Past structure and preparation method all comparative maturities.For temperature-compensating SAW resonator, traditional method is interdigital
(IDT) silica membrane of surface deposition layer of silicon dioxide (SiO2), amorphous has negative temperature coefficient, can just support
Disappear the positive temperature coefficient of piezoelectric substrate.The method that tradition prepares cavity type thin film bulk acoustic wave resonator is to carry out sky to substrate first
Then chamber is filled with sacrificial layer material again.Following depositions of bottom electrode material, then etches it to form required hearth electrode shape
Shape, redeposited piezoelectric layer also top electrode material and performs etching on this basis.Finally sacrificial layer material is carried out by through-hole
Wet etching.How temperature-compensating SAW resonator and thin film bulk acoustic wave resonator to be combined, to give full play to
Larger range of frequency adjustment effect, there is presently no corresponding researchs.
Summary of the invention
The purpose of the present invention is in view of the drawbacks of the prior art, propose a kind of novel sound of the use based on temperature-compensating
Surface wave and cavity type film bulk acoustic combined resonator and preparation method thereof.The compensatory surface acoustic wave of preparation temperature first is humorous
Shake device, and cavity type thin film bulk acoustic wave resonator is then formed in temperature compensating layer.Specifically, the solution of the present invention is as follows:
One kind combining resonator based on surface acoustic wave and cavity type film bulk acoustic, which is characterized in that the combination resonance
Device includes that the piezoelectric material substrate, the metal that stack gradually be interdigital, temperature compensating layer, piezoelectric unit；The wherein metallic tines finger-type
At above the piezoelectric material substrate, the temperature compensating layer covering metal is interdigital, the temperature compensating layer upper surface
It is provided with cavity and the cavity upper surface is covered by piezoelectric unit completely, the piezoelectric unit is formed in the temperature compensating layer
Top, the piezoelectric unit includes that first electrode, piezoelectric layer, second electrode are formed by stack architecture, wherein first electricity
Pole is arranged above the cavity and the cavity is completely covered.
Further, the material of the piezoelectric material substrate includes lithium niobate, lithium tantalate, aluminium nitride, zinc oxide or its group
It closes.
Further, the interdigital material of the metal includes aluminium, titanium, copper, chromium, silver or combinations thereof and/or the temperature
The material of compensation layer includes silica.
Further, the material of the piezoelectric layer include aluminium nitride (AlN), zinc oxide (ZnO), lithium niobate (LiNbO3),
Lithium tantalate (LiTaO3) or combinations thereof
Further, the second electrode includes metallic region, transitional region and dielectric regions, metallic region and piezoelectricity
Layer, first electrode constitute the first piezoelectric regions, and transitional region and piezoelectric layer, first electrode constitute the second piezoelectric regions, dielectric regions with
Piezoelectric layer, second electrode composition third piezoelectric regions, metallic region and the of poor quality of transitional region, transitional region and dielectric regions
Ropy and value is selected as being suitable for reducing energy loss caused by the acoustic irradiation issued from combination resonator.
Further, the quality difference of the metallic region and transitional region is 2% to 3%, transitional region and dielectric regime
The of poor quality of domain is 1% to 15%.
A kind of preparation method combining resonator, which comprises the following steps:
The deposited metal material on piezoelectric material substrate；
Processing is patterned to metal material, it is interdigital to form metal；
Depositing temperature compensation layer on the metal material, and keep temperature compensating layer covering metal interdigital；
Temperature compensating layer is patterned, cavity structure is formed；
In temperature-compensating layer surface deposited sacrificial layer material, it is filled up completely cavity structure, then sacrificial layer material is carried out flat
Smoothization processing forms the sacrificial layer in cavity；
It is deposited on sacrificial layer and graphically forms piezoelectric unit, the piezoelectric unit includes first electrode, piezoelectric layer, the
The stack architecture that two electrodes are formed；
Wet etching is carried out to the sacrificial layer in cavity, forms cavity.
Further, further include the steps that the metallic tines are formed in the temperature-compensating refers to extraction electrode.
Further, the step of formation metallic tines refer to extraction electrode includes carrying out figure to the temperature compensating layer
Shapeization and deposited metal material.
It further, further include that standard cleaning step is carried out to the piezoelectric material substrate.
What is proposed in the present invention combines resonator based on surface acoustic wave and cavity type film bulk acoustic, by surface acoustic wave resonance
Device combines with cavity type thin film bulk acoustic wave resonator, and combination resonator is enabled effectively to play the performance of two kinds of resonators
Advantage.
Detailed description of the invention
Fig. 1 is that one kind of the invention is based on surface acoustic wave and cavity type film bulk acoustic combines resonator sectional structure chart；
Fig. 2 is a kind of preparation process stream that resonator is combined based on surface acoustic wave and cavity type film bulk acoustic of the invention
First step exemplary diagram in journey；
Fig. 3 is a kind of preparation process stream that resonator is combined based on surface acoustic wave and cavity type film bulk acoustic of the invention
Second step exemplary diagram in journey；
Fig. 4 is a kind of preparation process stream that resonator is combined based on surface acoustic wave and cavity type film bulk acoustic of the invention
Third step exemplary diagram in journey；
Fig. 5 is a kind of preparation process stream that resonator is combined based on surface acoustic wave and cavity type film bulk acoustic of the invention
Tetra- step exemplary diagram of Cheng Zhong；
Fig. 6 is a kind of preparation process stream that resonator is combined based on surface acoustic wave and cavity type film bulk acoustic of the invention
Five step exemplary diagram of Cheng Zhong；
Fig. 7 is a kind of preparation process stream that resonator is combined based on surface acoustic wave and cavity type film bulk acoustic of the invention
Six step exemplary diagram of Cheng Zhong；
Fig. 8 is a kind of preparation process stream that resonator is combined based on surface acoustic wave and cavity type film bulk acoustic of the invention
Seven step exemplary diagram of Cheng Zhong；
Fig. 9 is a kind of preparation process stream that resonator is combined based on surface acoustic wave and cavity type film bulk acoustic of the invention
Eight step exemplary diagram of Cheng Zhong；
Figure 10 is a kind of preparation process that resonator is combined based on surface acoustic wave and cavity type film bulk acoustic of the invention
9th step exemplary diagram in process；
Figure 11 is a kind of preparation process that resonator is combined based on surface acoustic wave and cavity type film bulk acoustic of the invention
Tenth step exemplary diagram in process；
Figure 12 is that one kind of the invention is based on surface acoustic wave and cavity type film bulk acoustic combines resonator partial enlarged view.
Specific embodiment
Below by drawings and examples, technical scheme of the present invention will be described in further detail.
Embodiment 1
Fig. 1 is a kind of section that resonator is combined based on surface acoustic wave and cavity type film bulk acoustic of the embodiment of the present invention
Structure chart, the combination resonator include piezoelectric material substrate 100, and the material of piezoelectric material substrate 100 can be lithium niobate, tantalic acid
Lithium, aluminium nitride, zinc oxide etc. or combinations thereof；The metal interdigital 200 being formed on the substrate, the material of metal interdigital 200 can
For aluminium, titanium, copper, chromium, silver etc. or combinations thereof；Cover the temperature compensating layer 300 of metal interdigital 200, the material of temperature compensating layer 300
It can be silica etc.；300 upper surface of temperature compensating layer is provided with cavity 410 and 410 upper surface of the cavity is pressed completely
Electric unit is covered；Piezoelectric unit on temperature compensating layer is set, and piezoelectric unit is for example including by first electrode 500, pressure
Electric layer 600, second electrode 700 stack gradually to be formed, wherein first electrode 500, second electrode 700 material can for tungsten, molybdenum,
Platinum platinum, ruthenium, iridium, titanium tungsten, aluminium etc. or combinations thereof；The material of piezoelectric layer 600 be, for example, aluminium nitride (AlN), zinc oxide (ZnO),
Lithium niobate (LiNbO3), lithium tantalate (LiTaO3) etc. or combinations thereof；It further include that metal interdigital 200 is led into temperature compensating layer
Gold, silver, copper, aluminium etc. or combinations thereof can be used in the metallic tines index wire 810 on 300 surfaces, material.
Embodiment 2
On the basis of embodiment 1, as shown in figure 12, second electrode 700 is improved, such as second electrode 700 is wrapped
Include metallic region 701, transitional region 702 and dielectric regions 703, metallic region 701 and piezoelectric layer 600,500 structure of first electrode
At the first piezoelectric regions A1, transitional region 702 and piezoelectric layer 600, first electrode 500 constitute the second piezoelectric regions A2, dielectric regions 703
Third piezoelectric regions A3, of poor quality, the transitional region of metallic region and transitional region are constituted with piezoelectric layer 600, first electrode 500
With the ropy and value of dielectric regions be selected as be suitable for reduce from combine resonator sending acoustic irradiation caused by energy
Amount loss.
Wherein, transitional region 702 is metal material or dielectric substance, should if transitional region 702 uses metal material
Metal material used in metal material and metallic region 701 is different materials；If transitional region 702 uses dielectric substance,
Then the dielectric substance and dielectric substance used in dielectric regions 703 are different materials, selected by transitional region
Material is different, come adjust transitional region and metallic region, dielectric regions it is of poor quality.
In the present embodiment, the quality difference of the metallic region and transitional region is 2% to 3%, transitional region and dielectric
The of poor quality of region is 1% to 15%, belongs to the ropy of region and the of poor quality of transitional region, transitional region and dielectric regions
It is 3% to 18% with value
There are problems that certain energy dissipation in thin film bulk acoustic wave resonator, the tool of the energy dissipation and second electrode 700
Body structure is related, and after thin film bulk acoustic wave resonator is combined with temperature-compensating SAW resonator, energy dissipation is to combination
Resonator still has a certain impact, and with the specific performance of temperature-compensating SAW resonator difference, the size of the influence
Also different.Therefore the structure of second electrode 700 in combination resonator is improved in the present embodiment, is classified as metal area
Domain 701, transitional region 702 and dielectric regions 703, wherein metallic region 701 uses metal electrode material, and material can be
Tungsten, molybdenum, platinum platinum, ruthenium, iridium, titanium tungsten, aluminium etc. or combinations thereof；Dielectric regions 703 use dielectric substance, material can for platinum,
Tantalum pentoxide or combinations thereof；Transitional region 702 can use metal electrode material or electricity according to the different use demands of device
Dielectric material, if using metal material, using tungsten, molybdenum, platinum platinum, ruthenium, iridium, titanium tungsten, aluminium etc. or combinations thereof, if being situated between using electricity
Material then uses platinum, tantalum pentoxide or combinations thereof.The energy in resonator is combined by transition region come flexible compensation to consume
Damage, by adjusting the difference in quality between metallic region, transitional region, dielectric regions three, so that metal electrode be adjusted flexibly
Difference in quality between dielectric regions effectively reduces the energy dissipation in resonator.
Embodiment 3
Fig. 2-Figure 11 is a kind of based on surface acoustic wave and cavity type film bulk acoustic combination resonator in preparation embodiment 1
Process flow chart, the preparation flow include:
Prepare piezoelectric material substrate 100, carries out standard cleaning, as shown in Figure 2.
The deposited metal material on piezoelectric material substrate 100.The metal material can be the gold such as aluminium, titanium, copper, gold, chromium, silver
One or a combination set of belong to, the technique of deposition generally uses electron beam evaporation, physical vapour deposition (PVD), atomic layer deposition, pulse laser
Deposition etc.；Processing is patterned to metal material, wherein can graphically use such as photoetching treatment commonly used in the art, shape
At metal interdigital 200, as shown in Figure 3.
Depositing temperature compensation layer 300 on the metal material, and temperature compensating layer 300 is made to cover metal interdigital 200, i.e. temperature
Compensation layer 300 is filled up completely the gap of metal interdigital 200.In addition, it is further, planarization process is carried out to temperature compensating layer,
The planarisation step is for example, by using CMP step, as shown in Figure 4.
Temperature compensating layer 300 is patterned, forms cavity structure 310, as shown in Figure 5；
In temperature-compensating layer surface deposited sacrificial layer material, it is filled up completely cavity structure 310, then sacrificial layer material is carried out
Planarization process forms the sacrificial layer 400 in cavity, as shown in Figure 6；
Processing is patterned to temperature compensating layer 300, forms metal lead wire through-hole 800, as shown in Figure 7.
The deposited metal material 810 in metal lead wire through-hole is filled up completely metal lead wire through-hole 800, and further progress
Planarization process, as shown in Figure 8.
First electrode 500 is deposited in temperature compensating layer 300, and carries out graphical treatment, wherein first electrode 500
Material includes one or a combination set of tungsten, molybdenum, platinum platinum, ruthenium, iridium, titanium tungsten, aluminium, as shown in Figure 9.
The depositing piezoelectric layer 600 in first electrode 500, and graphical treatment is carried out, as shown in Figure 10.The piezoelectric layer
600 material includes one of aluminium nitride (AlN), zinc oxide (ZnO), lithium niobate (LiNbO3), lithium tantalate (LiTaO3) or its group
It closes.
Second electrode 700 is deposited on 600 over the piezoelectric layer, and carries out graphical treatment, as shown in Figure 10.
Wet etching is carried out to the sacrificial layer 400 in cavity, forms cavity 410, as shown in figure 11.
It should be further noted that the embodiment of the present invention 3 illustrate schematicallys the preparation process of device of the present invention, but
The understanding based on art technology, can also to wherein the step of improve or adjust, such as formed metal lead wire hole
800, it and 810 step of deposited metal material, can also be carried out after having prepared piezoelectric unit.
It is innovative by temperature-compensating SAW resonator and cavity type thin-film body in preparation method provided by the invention
Acoustic resonator is incorporated into the same processing step, more efficient from technological angle, can be more flexible from angles of product.
The above examples are only used to illustrate the technical scheme of the present invention and are not limiting, although referring to preferred embodiment to this hair
It is bright to be described in detail, those skilled in the art should understand that, it can modify to technical solution of the present invention
Or equivalent replacement, without departing from the spirit and scope of the technical solution of the present invention.
Claims (6)
1. one kind combines resonator based on surface acoustic wave and cavity type film bulk acoustic, which is characterized in that the combination resonator
Piezoelectric material substrate, metal including stacking gradually be interdigital, temperature compensating layer, piezoelectric unit；Wherein the metallic tines finger-type at
Above the piezoelectric material substrate, the temperature compensating layer covering metal is interdigital, and the temperature compensating layer upper surface is opened
There is cavity and the cavity upper surface is covered by piezoelectric unit completely, the piezoelectric unit is formed in the temperature compensating layer
Side, the piezoelectric unit includes that first electrode, piezoelectric layer, second electrode are formed by stack architecture, wherein the first electrode
It is arranged above the cavity and the cavity is completely covered.
2. according to claim 1 a kind of based on surface acoustic wave and cavity type film bulk acoustic combination resonator, feature
It is, material used in the piezoelectric material substrate is lithium niobate, lithium tantalate, aluminium nitride, zinc oxide.
3. according to claim 1 a kind of based on surface acoustic wave and cavity type film bulk acoustic combination resonator, feature
It is, material used in the metal is interdigital is aluminium, titanium, copper, chromium, material used in silver and/or the temperature compensating layer
For silica.
4. according to claim 1 a kind of based on surface acoustic wave and cavity type film bulk acoustic combination resonator, feature
It is, material used in the piezoelectric layer is aluminium nitride (AlN), zinc oxide (ZnO), lithium niobate (LiNbO3), lithium tantalate
(LiTaO3)。
5. according to claim 1 a kind of based on surface acoustic wave and cavity type film bulk acoustic combination resonator, feature
It is, the second electrode includes metallic region, transitional region and dielectric regions, metallic region and piezoelectric layer, first electrode structure
At the first piezoelectric regions, transitional region and piezoelectric layer, first electrode constitute the second piezoelectric regions, dielectric regions and piezoelectric layer, the second electricity
Pole constitutes third piezoelectric regions, the ropy and value of metallic region and the of poor quality of transitional region, transitional region and dielectric regions
It is selected as being suitable for reducing energy loss caused by the acoustic irradiation issued from combination resonator.
6. according to claim 5 a kind of based on surface acoustic wave and cavity type film bulk acoustic combination resonator, feature
It is, the quality difference of the metallic region and transitional region is 2% to 3%, and transitional region and the of poor quality of dielectric regions are
1% to 15%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821978680.4U CN208608966U (en) | 2018-11-27 | 2018-11-27 | One kind combining resonator based on surface acoustic wave and cavity type film bulk acoustic |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821978680.4U CN208608966U (en) | 2018-11-27 | 2018-11-27 | One kind combining resonator based on surface acoustic wave and cavity type film bulk acoustic |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208608966U true CN208608966U (en) | 2019-03-15 |
Family
ID=65681177
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821978680.4U Active CN208608966U (en) | 2018-11-27 | 2018-11-27 | One kind combining resonator based on surface acoustic wave and cavity type film bulk acoustic |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208608966U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109217841A (en) * | 2018-11-27 | 2019-01-15 | 杭州左蓝微电子技术有限公司 | One kind combining resonator based on surface acoustic wave and cavity type film bulk acoustic |
| CN111865248A (en) * | 2020-04-30 | 2020-10-30 | 诺思(天津)微系统有限责任公司 | Resonator assembly, semiconductor device, electronic apparatus, and method of manufacturing resonator assembly |
-
2018
- 2018-11-27 CN CN201821978680.4U patent/CN208608966U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109217841A (en) * | 2018-11-27 | 2019-01-15 | 杭州左蓝微电子技术有限公司 | One kind combining resonator based on surface acoustic wave and cavity type film bulk acoustic |
| CN109217841B (en) * | 2018-11-27 | 2024-03-01 | 杭州左蓝微电子技术有限公司 | Film bulk acoustic wave combined resonator based on acoustic surface wave and cavity |
| CN111865248A (en) * | 2020-04-30 | 2020-10-30 | 诺思(天津)微系统有限责任公司 | Resonator assembly, semiconductor device, electronic apparatus, and method of manufacturing resonator assembly |
| CN111865248B (en) * | 2020-04-30 | 2021-11-02 | 诺思(天津)微系统有限责任公司 | Resonator assembly, semiconductor device, electronic apparatus, and method of manufacturing resonator assembly |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109217841A (en) | One kind combining resonator based on surface acoustic wave and cavity type film bulk acoustic | |
| CN109245742A (en) | One kind combining resonator based on surface acoustic wave and solid reflecting layer film bulk acoustic | |
| CN107093994A (en) | FBAR and its processing method | |
| CN108539006A (en) | A kind of temperature-compensating SAW filter and preparation method thereof | |
| CN207460113U (en) | The thin film bulk acoustic wave resonator combined based on solid-state and cavity | |
| CN109150135A (en) | Thin film bulk acoustic wave resonator and its processing method based on bonding | |
| CN106961258A (en) | A kind of cavity type SAW resonator and its processing method | |
| CN208924202U (en) | One kind combining resonator based on surface acoustic wave and solid reflecting layer film bulk acoustic | |
| CN107196618A (en) | FBAR and preparation method thereof | |
| CN107493086A (en) | Temperature-compensating SAW resonator and preparation method thereof | |
| CN108900173B (en) | Method for preparing film bulk acoustic resonator by taking silicon as sacrificial layer | |
| WO2020087566A1 (en) | Hybrid acoustic wave resonator and preparation method therefor | |
| WO2021143520A1 (en) | Filter, duplexer, high-frequency front-end circuit, and communication apparatus | |
| CN112803911B (en) | Preparation method of surface acoustic wave transducer with temperature compensation function | |
| CN107222181A (en) | FBAR based on SOI Substrate and preparation method thereof | |
| CN107171654A (en) | The FBAR and processing method combined based on solid-state and cavity | |
| CN208608966U (en) | One kind combining resonator based on surface acoustic wave and cavity type film bulk acoustic | |
| CN107231138A (en) | FBAR with supporting construction and preparation method thereof | |
| CN206673927U (en) | FBAR and wave filter | |
| WO2021203761A1 (en) | Filter, multiplexer, and communication device | |
| CN109474255B (en) | Film bulk acoustic resonator, manufacturing method thereof and filter | |
| CN107979353A (en) | RF MEMS filters and preparation method thereof | |
| CN208768044U (en) | Thin film bulk acoustic wave resonator based on bonding | |
| CN108880500A (en) | The production method and radio-frequency filter of radio-frequency filter | |
| CN109150127A (en) | Thin film bulk acoustic wave resonator and preparation method thereof, filter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |