CN104465926A - Graphical sapphire substrate and light emitting diode - Google Patents
Graphical sapphire substrate and light emitting diode Download PDFInfo
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- CN104465926A CN104465926A CN201410832667.8A CN201410832667A CN104465926A CN 104465926 A CN104465926 A CN 104465926A CN 201410832667 A CN201410832667 A CN 201410832667A CN 104465926 A CN104465926 A CN 104465926A
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- Prior art keywords
- sapphire substrate
- jut
- graphical sapphire
- face
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- 239000000758 substrate Substances 0.000 title claims abstract description 80
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 78
- 239000010980 sapphire Substances 0.000 title claims abstract description 78
- 238000003475 lamination Methods 0.000 claims description 7
- 230000000994 depressogenic effect Effects 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 239000000463 material Substances 0.000 abstract description 8
- 229910002601 GaN Inorganic materials 0.000 abstract description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract description 5
- 230000035515 penetration Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 21
- 229910017083 AlN Inorganic materials 0.000 description 12
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 11
- 239000013078 crystal Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- LICUQAFOHXHWQC-UHFFFAOYSA-N [S].OP(O)(O)=O Chemical compound [S].OP(O)(O)=O LICUQAFOHXHWQC-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000013079 quasicrystal Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a graphical sapphire substrate, a manufacturing method of the graphical sapphire substrate and the light emitting diode with the substrate. The graphical sapphire substrate is provided with a first surface and a second surface, wherein the first surface and the second surface are opposite, and no C surfaces, namely, 0001 surfaces exist in connection regions between all first protrusion parts. No C surfaces exist on the growth surfaces of the graphical sapphire substrate, and therefore the penetration dislocation density of a gallium nitride epitaxial material on the sapphire substrate is reduced.
Description
Technical field
Invention relates to a graphical sapphire substrate, its manufacture method and adopts the light-emitting diode of this graphical sapphire substrate.
Background technology
PSS(Patterned Sapphire Substrate, patterned substrate) be utilize the technique such as photoetching, etching on a sapphire substrate, form the Sapphire Substrate with patterned surface.Patterned substrate effectively can reduce the dislocation density of epitaxial structure layer on the one hand, improve crystal mass and the uniformity of epitaxial material, and then the interior quantum luminous efficiency of light-emitting diode can be improved, on the other hand, because array pattern structure adds the scattering of light, change the optowire of light-emitting diode, and then improve bright dipping probability.
In existing patterned substrate, the C face (i.e. sapphire (0001) face) of ubiquity larger area.The threading dislocation that C face is formed easily extends to the quantum well of light-emitting diode, causes non-radiative recombination.Chinese patent literature CN102244170B discloses a kind of photonic quasicrystal graph sapphire substrate, it attempts to reduce the C face proportion in whole Sapphire Substrate area exposed in Sapphire Substrate graphic structure, but because its graphic structure is made up of a series of photon crystal structure, certainly exist gap 205 between each photon crystal structure, namely there is C face.
Summary of the invention
The present invention proposes a kind of graphical sapphire substrate, its manufacture method and adopts the light-emitting diode of this graphical sapphire substrate, C face can not be there is in the growing surface of wherein said graphical sapphire substrate, thus reduce the threading dislocation density of gallium nitride epitaxial materials in Sapphire Substrate.
According to a first aspect of the invention, graphical sapphire substrate, there is relative first surface and second surface, wherein first surface has first jut of the first size d1 of series of rules arrangement, and the bonding pad between each first jut described does not exist C face (i.e. (0001) face).
In certain embodiments, triangle is formed between described three adjacent the first juts, described each triangle interior has second jut of a second size d2, wherein d1>d2, described first jut and the second jut are directly or be connected with curved surface thus make described bonding pad there is not C face.
Preferably, described first jut does not have C face.
Preferably, described second jut does not have C face.
Preferably, described first surface does not have C face completely.
Preferably, form rhombus between described four adjacent described first juts, wherein there are between long-diagonal two described second juts, there is the 3rd jut of a 3rd size d3, wherein d3 < d2 between short diagonal.Preferably, have a depressed part between described two the second juts, its lowest part is the peak of described 3rd jut.
Preferably, described second jut is primarily of three or three cones formed with top incline, and each main inclined plane is respectively to should described three the first juts.Preferably, the inclined plane of described second jut and the angle in Sapphire Substrate C face are 10 ° ~ 40 °.In certain embodiments, have a V-type groove between described two nearest the first juts, it is simultaneously between adjacent two the second juts, and two sides of described V-type groove are made up of the inclined plane of described two the second juts respectively.
Preferably, the ratio of the height h1 of described first jut and the height h2 of the second jut is 2 ~ 50.
Preferably, described first jut accounts for 50% ~ 90% of the described first surface gross area.
Preferably, the top of described first jut is cone and circular or polygonal being projected as of C face.
According to a second aspect of the invention, the manufacture method of graphical sapphire substrate, comprises step: 1) provide a Sapphire Substrate, has relative first surface and second surface, forms patterned mask layer on the first surface; 2) adopt dry ecthing to form a series of raised structures on the first surface, the join domain between each raised structures described is etched into little convex surface; 3) wet etching is carried out to the first surface of described Sapphire Substrate, thus formation patterned surface, this surface has first jut of the first size d1 of series of rules arrangement, and the bonding pad between each first jut described does not have C face (i.e. (0001) face).
Preferably, the patterned mask layer formed in described step 1) is made up of a series of column photoresistance, oxide or metal.
Preferably, the pattern dimension diameter formed in described step 1) is 0.5um ~ 6um, and the gap between each pattern is 0.5um ~ 6um.
Preferably, described step 2) in the little convex surface of each raised structures of connection that formed be curved surface.
Preferably, described step 2) in the height of little convex surface of each raised structures of connection that formed be 0.05um ~ 0.5um.
Preferably, adopt sulphur phosphoric acid to mix in described step 3) first surface that liquid corrosion carves described Sapphire Substrate, forms described patterned surface.
According to a third aspect of the present invention, light-emitting diode, comprises any one graphical sapphire substrate aforementioned and is formed at the luminous extension lamination of described graphical sapphire substrate.
Preferably, the surface of described graphical sapphire substrate has the AlN layer that one deck adopts PVD to be formed, described luminous extension lamination is formed on described AlN.
Preferably, the thickness of described AlN layer is 10 dust ~ 200 dusts.
According to a fourth aspect of the present invention, the manufacture method of light-emitting diode: comprise step: 1) provide a Sapphire Substrate, has relative first surface and second surface, forms patterned mask on the first surface; 2) adopt dry ecthing to form a series of raised structures on the first surface, the join domain between each raised structures described is etched into little convex surface; 3) wet etching is carried out to the first surface of described Sapphire Substrate, thus formation patterned surface, this surface has first jut of the first size d1 of series of rules arrangement, is connected thus makes described bonding pad not have C face (i.e. (0001) face) between each first jut described with curved surface; 4) on described patterned surface, PVD is adopted to form an AlN layer; 5) in the luminous extension lamination of described AlN layer Epitaxial growth, it at least comprises n-type semiconductor layer, luminescent layer and p-type semiconductor layer.
Preferably, described step 2) in the little convex surface of each raised structures of connection that formed be curved surface.
Preferably, adopt sulphur phosphoric acid to mix in described step 3) first surface that liquid corrosion carves described Sapphire Substrate, forms described patterned surface.
Graphical sapphire substrate of the present invention, can there is not c face completely in its picture on surface structure, can effectively eliminate the threading dislocation that C face is formed on the one hand, promote the crystal mass of epitaxial structure, on the other hand, owing to there is not c face, be conducive to more light injection light-emitting diode, substantially increase the light extraction efficiency of LED.
Other features and advantages of the present invention will be set forth in the following description, and, partly become apparent from specification, or understand by implementing the present invention.Object of the present invention and other advantages realize by structure specifically noted in specification, claims and accompanying drawing and obtain.
Accompanying drawing explanation
Accompanying drawing is used to provide a further understanding of the present invention, and forms a part for specification, together with embodiments of the present invention for explaining the present invention, is not construed as limiting the invention.In addition, accompanying drawing data describe summary, is not draw in proportion.
Fig. 1 schemes according to the SEM of a kind of graphical sapphire substrate of the invention process.
Fig. 2 is the vertical view according to a kind of graphical sapphire substrate of the invention process.
Fig. 3 is the cutaway view cut along Fig. 2 center line A-A.
Fig. 4 is the cutaway view cut along Fig. 2 center line B-B.
Fig. 5 shows the one distortion of structure shown in Fig. 4.
Fig. 6 is according to a kind of flow chart making graphical sapphire substrate of the invention process.
Fig. 7 ~ 8 are the manufacturing process according to a kind of graphical sapphire substrate of the invention process.
Fig. 9 is according to a kind of flow chart making light-emitting diode of the invention process.
Figure 10 is the structure chart according to a kind of light-emitting diode of the invention process.
In figure, each label is expressed as follows:
100: Sapphire Substrate; 110:AlN layer; 120: resilient coating; 130:n type semiconductor layer; 140: luminescent layer; 150:p type semiconductor layer; 200: patterned mask layer; 210: raised structures; 220: little convex surface; P
1: the first jut; P
2: the second jut; P
3: the 3rd jut; H
1: the first depressed part; H
2: the second depressed part; S
1~ S
3: the inclined plane of the second jut.
Embodiment
Below in conjunction with embodiment and accompanying drawing, specific embodiment of the invention is elaborated.
Accompanying drawing 1 ~ 4 shows a preferred embodiment of the present invention, and wherein Fig. 3 is the cutaway view cut along Fig. 2 center line A-A, and Fig. 4 is the cutaway view cut along Fig. 2 center line B-B.
Please refer to accompanying drawing 1 and Fig. 2, a kind of graphical sapphire substrate, its upper surface is made up of patterning, there is not C face completely.This patterning comprises the first jut P of the first size d1 of series of rules arrangement
1, three wherein adjacent the first jut P
1-1
,p
1-2 and P
1form triangle or similar triangle between-4, its inside has the second jut P of a second size d2
2, four adjacent the first jut P
1-1
,p
1-2, P
1-3 and P
1form rhombus between-4, wherein there is between long-diagonal the second jut, there is between short diagonal the 3rd jut P of a 3rd size d3
3, wherein d3 < d2 < d1.
Please refer to Fig. 2 and 3, the first jut P
1be projected as circular or similar circle in Sapphire Substrate C face, account for 50% ~ 90% of the whole sapphire upper surface gross area, the desirable 0.5 ~ 6um of its diameter d 1, the desirable 0.5um ~ 2um of height h1, specifically chooses according to actual design.This first jut P
1be divided into top and bottom, wherein top is the cone be made up of multiple inclined plane, and bottom has a closed inclined plane, and the inclined plane at top and the angle in c face are 20 ~ 40 °, and the inclined plane of bottom and the angle in c face are 40 ~ 70 °.
Second jut P
2by three or three with top incline S
1~ S
3form, each main inclined plane is just just to a first jut P
1, the angle in this inclined plane and c face is 10 ° ~ 40 °.This second jut P
2diameter d 2 be generally less than or equal the first jut P
1diameter d 1, desirable 0.1um ~ 3um, height h2 desirable 0.1um ~ 1.5um.Please refer to Fig. 1 and 3, two adjacent the second jut P
2between there is a dolly dimple H
2.
Please refer to Fig. 1 and 4, be positioned at the first adjacent jut P
1between the 3rd jut P
3peak be dolly dimple H
2minimum point.
In the present embodiment, first jut of the upper surface design series of rules arrangement of graphical sapphire substrate, it is circular or polygonal in being projected as of C face, top is cone, and adjacent three the first juts form triangle, its indoor design second jut, this second jut is designed to primarily of three or three cones formed with top incline, and three main inclined planes respectively to should three the first juts, thus ensure that sapphire upper surface does not exist c face completely.
Fig. 5 shows a distortion of above-described embodiment, in the present embodiment, and two first jut P of next-door neighbour
1between be a V-shaped groove, namely not there is the 3rd jut P shown in Fig. 1
3, it is positioned at two adjacent the second jut P simultaneously
2between, the inclined plane of two sides of this V-type groove this two the second juts is respectively formed.
Simple declaration is done below in conjunction with the manufacture method of Fig. 6 ~ 8 to above-mentioned graphical sapphire substrate.
Please refer to accompanying drawing 6, the manufacture method of graphical sapphire substrate, comprise step S01 ~ S03, comprise formation photomask layer, adopt dry ecthing mode etch substrate surface and adopt the formation of wet method erosion substrate surface without the patterned surface in c face.
Step S01: provide and have relative first surface and the Sapphire Substrate of second surface, forms patterned mask layer 200, as shown in Figure 7 on the first surface.Specific as follows: first in smooth Sapphire Substrate, to be coated with one deck photoresistance, this photoresistance thickness can be 0.5um ~ 3um; Following utilization gold-tinted processing procedure produces figure, and this manufacture method can comprise step-by-step exposure machine, contact exposure machine, projection exposure machine or impression mode, and its dimension of picture diameter can be 0.5um ~ 6um, and the gap between each figure can be 0.5um ~ 6um.
Step S02: the first surface of dry etching Sapphire Substrate, form a series of raised structures 210 on the first surface, the region between each raised structures is etched into little convex surface 220, as shown in Figure 8, preferably this little convex surface 220 is curved surface, and the height of this curved surface is good with 0.05um ~ 0.5um.Specific as follows: the Sapphire Substrate with photoresistance figure through aforementioned processing is delivered to the etching of ICP board, its program mainly comprises: upper electrode power, lower electrode power, chamber pressure, BCl
3gas flow, top electrode and lower electrode power can be 1:1 ~ 24:1, and chamber pressure can be 0.1 ~ 1 Pa, BCl
3gas flow can be 20 ~ 100% of board maximum.
Step S03: the first surface of wet etching Sapphire Substrate, forms patterned surface, as shown in Figure 1.Specific as follows: aforementioned Sapphire Substrate after ICP etching is put into high temperature sulphur phosphoric acid and mixes liquid and etch, wherein temperature is 150 ~ 300 degree, and the ratio of sulfuric acid and phosphoric acid can be 1:1 ~ 10:1.
In above-mentioned steps, step 2) be the committed step of this manufacture method, join domain between each raised structures 210 is etched into little convex surface 220 by its requirement, make the bonding pad between each raised structures 210 there is not plane, thus ensure that step 3) can obtain the patterning shown in Fig. 1 by wet etching.
Fig. 9 shows according to a kind of flow chart making light-emitting diode of the invention process, comprise step S01 ~ S05, wherein step S01 ~ S03 forms graphical sapphire substrate, step S04 forms AlN layer for adopting PVD on graphical sapphire substrate, and step S05 is in the luminous extension lamination of AlN layer Epitaxial growth.Be briefly described each step below, wherein step 01 ~ 03 illustrates with reference to aforementioned.
Step S04: adopt PVD method, shape face one AlN layer on the surface of the graphical sapphire substrate adopting the method for step S01 ~ S03 to be formed, the thickness of this layer is 10 dust ~ 200 dusts.
Step S05: adopt epitaxial growth regime, grown buffer layer 120, n-type semiconductor layer 130, luminescent layer 140 and p-type semiconductor layer 150 successively, wherein resilient coating 120 is the material based on III group-III nitride, preferably adopts gallium nitride, can also adopt aluminium nitride material or Al-Ga-N material; N-type semiconductor layer 130 is preferably gallium nitride, also can adopt Al-Ga-N material, and silicon doping preferred concentration is 1 × 10
19cm
-3; Luminescent layer 140 for preferably there is at least one quantum well structure, preferably for having 5 ~ 50 pairs of quantum well constitutions; P layer semiconductor layer 150 is preferably gallium nitride, and adopt magnesium doping, doping content is 1 × 10
19~ 5 × 10
21cm
-3, preferably p-type semiconductor layer is sandwich construction, comprises p-type electronic barrier layer, p-type electric-conducting layer and P type contact layer, wherein p-type electronic blocking is close to luminescent layer 140, enter p-type layer and hole-recombination for block electrons, preferably adopt Al-Ga-N material, thickness can be 50 ~ 200nm.
Figure 10 shows and adopts the light-emitting diode that shown in Fig. 9, manufacture method is formed, and its structure comprises: graphical sapphire substrate 100, AlN layer 110, resilient coating 120, n-type semiconductor layer 1300, luminescent layer 140 and p-type semiconductor layer 150.In this light-emitting diode, there is not c face in the aufwuchsplate of the graphical sapphire substrate of employing, can effectively eliminate the threading dislocation that C face is formed, promote the crystal mass of epitaxial structure; First form an AlN layer on a sapphire substrate by PVD mode, can be used as Seed Layer, be beneficial to the growth of follow-up luminous extension lamination; In addition, there is not plane in the aufwuchsplate of whole graphical sapphire substrate, increase the reflection of light and the region of scattering, be conducive to more light injection light-emitting diode, substantially increase the light extraction efficiency of LED.
Claims (16)
1. graphical sapphire substrate, there is relative first surface and second surface, wherein first surface has first jut of the first size d1 of series of rules arrangement, it is characterized in that: the bonding pad between each first jut described does not exist C face (i.e. (0001) face).
2. graphical sapphire substrate according to claim 1, it is characterized in that: between described three adjacent the first juts, form triangle, described each triangle interior has second jut of a second size d2, wherein d1>d2, described first jut and the second jut are directly or be connected with curved surface thus make described bonding pad there is not C face.
3. graphical sapphire substrate according to claim 2, is characterized in that: described first jut does not have C face.
4. the graphic sapphire according to claim 2 real end, it is characterized in that: described second jut does not have C face.
5. graphical sapphire substrate according to claim 2, is characterized in that: described first surface does not have C face.
6. graphical sapphire substrate according to claim 2, is characterized in that: form rhombus between described four adjacent the first juts, wherein have two described second juts between long-diagonal.
7. graphical sapphire substrate according to claim 6, is characterized in that: the 3rd jut wherein between short diagonal with a 3rd size d3, wherein d3 < d2.
8. graphical sapphire substrate according to claim 7, is characterized in that: have a depressed part between described two the second juts, and its lowest part is the peak of described 3rd jut.
9. graphical sapphire substrate according to claim 2, is characterized in that: described second jut is primarily of three or three cones formed with top incline, and each main inclined plane is respectively to should described three the first juts.
10. graphical sapphire substrate according to claim 9, is characterized in that: the inclined plane of described second jut and the angle in Sapphire Substrate C face are 10 ° ~ 40 °.
11. graphical sapphire substrates according to claim 9, it is characterized in that: between described two nearest the first juts, there is a V-type groove, it is simultaneously between adjacent two the second juts, and two sides of described V-type groove are made up of the inclined plane of described two the second juts respectively.
12. graphical sapphire substrates according to claim 2, is characterized in that: the ratio of the height h1 of described first jut and the height h2 of the second jut is 2 ~ 50.
13. graphical sapphire substrates according to claim 2, is characterized in that: described first jut accounts for 50% ~ 90% of the described first surface gross area.
14. graphical sapphire substrates according to claim 2, is characterized in that: the top of described first jut is cone and circular or polygonal being projected as of C face.
15. light-emitting diodes, comprise graphical sapphire substrate, are formed at the luminous extension lamination of described graphical sapphire substrate, it is characterized in that: described graphical sapphire substrate adopts the graphical sapphire substrate in claim 1 ~ 15 described in any one.
16., according to the light-emitting diode shown in claim 15, is characterized in that: the surface of described graphical sapphire substrate has the AlN layer that one deck adopts PVD to be formed, described luminous extension lamination is formed on described AlN layer.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410832667.8A CN104465926B (en) | 2014-12-29 | 2014-12-29 | Graphical sapphire substrate and light emitting diode |
| PCT/CN2015/097562 WO2016107412A1 (en) | 2014-12-29 | 2015-12-16 | Patterned sapphire substrate and light emitting diode |
| US15/422,216 US9947830B2 (en) | 2014-12-29 | 2017-02-01 | Patterned sapphire substrate and light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410832667.8A CN104465926B (en) | 2014-12-29 | 2014-12-29 | Graphical sapphire substrate and light emitting diode |
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| Publication Number | Publication Date |
|---|---|
| CN104465926A true CN104465926A (en) | 2015-03-25 |
| CN104465926B CN104465926B (en) | 2017-09-29 |
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| WO2016107412A1 (en) * | 2014-12-29 | 2016-07-07 | 厦门市三安光电科技有限公司 | Patterned sapphire substrate and light emitting diode |
| WO2017076119A1 (en) * | 2015-11-03 | 2017-05-11 | 厦门市三安光电科技有限公司 | Patterned sapphire substrate, light emitting diode, and manufacturing methods therefor |
| CN109103310A (en) * | 2018-09-03 | 2018-12-28 | 淮安澳洋顺昌光电技术有限公司 | A kind of epitaxial wafer and growing method promoting gallium nitride based LED light emitting diode antistatic effect |
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| CN103069541A (en) * | 2010-08-06 | 2013-04-24 | 日亚化学工业株式会社 | Sapphire substrate and semiconductor light emitting device |
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| WO2016107412A1 (en) * | 2014-12-29 | 2016-07-07 | 厦门市三安光电科技有限公司 | Patterned sapphire substrate and light emitting diode |
| WO2017076119A1 (en) * | 2015-11-03 | 2017-05-11 | 厦门市三安光电科技有限公司 | Patterned sapphire substrate, light emitting diode, and manufacturing methods therefor |
| CN109103310A (en) * | 2018-09-03 | 2018-12-28 | 淮安澳洋顺昌光电技术有限公司 | A kind of epitaxial wafer and growing method promoting gallium nitride based LED light emitting diode antistatic effect |
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