CN109326695A - A kind of epitaxial wafer and growing method improving gallium nitride based LED light-emitting diode luminance - Google Patents
A kind of epitaxial wafer and growing method improving gallium nitride based LED light-emitting diode luminance Download PDFInfo
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- CN109326695A CN109326695A CN201811022468.5A CN201811022468A CN109326695A CN 109326695 A CN109326695 A CN 109326695A CN 201811022468 A CN201811022468 A CN 201811022468A CN 109326695 A CN109326695 A CN 109326695A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 93
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 80
- 238000000034 method Methods 0.000 title claims abstract description 21
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 26
- 230000004888 barrier function Effects 0.000 claims abstract description 19
- 238000005915 ammonolysis reaction Methods 0.000 claims abstract description 12
- 150000004767 nitrides Chemical class 0.000 claims abstract description 12
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 10
- 239000010980 sapphire Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 230000000737 periodic effect Effects 0.000 claims abstract description 6
- 239000011777 magnesium Substances 0.000 claims description 38
- 239000000203 mixture Substances 0.000 claims description 18
- 239000000956 alloy Substances 0.000 claims description 11
- 229910045601 alloy Inorganic materials 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- 239000004411 aluminium Substances 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 7
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 230000001413 cellular effect Effects 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000010276 construction Methods 0.000 claims description 4
- 239000002019 doping agent Substances 0.000 claims description 4
- 229910002804 graphite Inorganic materials 0.000 claims description 4
- 239000010439 graphite Substances 0.000 claims description 4
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 claims description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000012159 carrier gas Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 239000007792 gaseous phase Substances 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910000077 silane Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 238000013461 design Methods 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 11
- 239000000463 material Substances 0.000 description 7
- 238000004020 luminiscence type Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The present invention provides a kind of epitaxial wafer and growing method for improving gallium nitride based LED light-emitting diode luminance, the sequence of the epitaxial slice structure from bottom to top is followed successively by patterned sapphire AlN substrate, undoped low temperature nitride gallium buffer layer, undoped high-temperature ammonolysis gallium layer, mixes SiH4N type gallium nitride conductive layer, active illuminating layer be periodic structure InGaN/GaN Quantum Well build area, mix the p-type gallium nitride conductive layer of Mg and mix the p-type contact layer of Mg.More traditional growing method is different, and the present invention builds plot structure to luminescent layer quantum and design is optimized, and proposes quantum and builds the InGaN superlattice structure that In is mixed in area using GaN/ on a small quantity.The structure can significantly affect the stress of barrier layer and the stress of Quantum Well, can effectively improve the crystal quality of luminescent layer, provide a kind of epitaxial wafer growth method to effectively improve the brightness of gallium nitride based light emitting diode.
Description
Technical field
The invention belongs to GaN-based LED epitaxial wafers to design applied technical field, be related to a kind of raising gallium nitride based LED hair
The epitaxial wafer and growing method of optical diode brightness.
Background technique
Gallium nitride (GaN) radical luminescence diode (Light-Emitting Diode, LED) long, low in energy consumption, nothing with the service life
The advantages that pollution, can be applied in numerous areas such as display, illuminations.Although GaN base LED industrialization, outside high brightness
It is most important to the occupation rate in the market LED to prolong piece.
Traditional GaN base LED epitaxial growth structure process at present are as follows: 500 DEG C of elder generations grow on a sapphire substrate one layer it is low
Warm GaN buffer layer；It is then followed by one layer of undoped high temperature GaN of growth at 1100 DEG C；It is adulterated followed by one layer of high growth temperature
The n-type GaN layer of SiH4, this layer provide the electronics of recombination luminescence；It is then followed by 750~850 DEG C and grows several periods
The Quantum Well and quantum of GaN/InGaN builds the luminescent layer as LED, this layer is the core of GaN base LED extension；Then exist
The p-type AlGaN layer of 950 DEG C or so growth doping Mg, plays the role of stopping electronics；Finally one layer is grown at 1000 DEG C or so to mix
The p-type GaN layer of miscellaneous Mg, this layer provide the hole of recombination luminescence；It is finally annealing process.
The active layer of LED epitaxial growth at present mostly uses several periodic structure GaN/InGaN Quantum Well to build area, electronics and sky
Cave recombination luminescence in the relatively narrow well layer InGaN material of energy band.Lattice mismatch between GaN material and InGaN material is in device
Active layer generate apparent biaxial stress, the size of barrier layer stress directly affects dislocation density and Quantum Well quality, influences LED
Luminous efficiency, reduce barrier layer stress ill effect to improve device luminous efficiency it is extremely important.
Summary of the invention
It is an object of the present invention to for the skill faced in the development process of above-mentioned conventional gallium nitride base LED epitaxial wafer
Art problem builds structure to luminescent layer quantum and design is optimized, by mixing In on a small quantity to barrier layer, and it is raw using superlattice structure
It is long, so that the surface topography of material is improved, stands facing each other ply stress and Quantum Well stress has significant effect, Quantum Well transition energy
Amount and luminous intensity have apparent improvement, improve quantum well radiation efficiency.A kind of raising gallium nitride base proposed by the present invention
The epitaxial wafer and growing method of LED light-emitting diode luminance, the structure of epitaxial layers are as shown in Figure 1, comprising: sapphire graphical
Change AlN substrate；Undoped low temperature nitride gallium buffer layer；Undoped high-temperature ammonolysis gallium layer；The n type gallium nitride for mixing SiH4 is conductive
Layer；Active illuminating layer is that the InGaN/GaN Quantum Well of periodic structure builds area, and wherein quantum builds the GaN/ for using superlattice structure
The InGaN of In is mixed on a small quantity；Low temperature mixes the p-type aluminium gallium nitride alloy electronic barrier layer of Mg；Mix the p-type gallium nitride conductive layer of Mg；Mix the P of Mg
Type contact layer.
Technical solution of the present invention:
A kind of epitaxial wafer improving gallium nitride based LED light-emitting diode luminance, the sequence of the epitaxial slice structure from bottom to top
It is followed successively by patterned sapphire AlN substrate；Undoped low temperature nitride gallium buffer layer；Undoped high-temperature ammonolysis gallium layer；It mixes
SiH4N type gallium nitride conductive layer；Active illuminating layer is that the InGaN/GaN Quantum Well of periodic structure builds area, and wherein quantum is built
Layer mixes the InGaN of In using the GaN/ of superlattice structure on a small quantity；Low temperature mixes the p-type aluminium gallium nitride alloy electronic barrier layer of Mg；Mix the P of Mg
Type gallium nitride conductive layer；Mix the p-type contact layer of Mg；
The active illuminating layer, which is replaced by InGaN Quantum Well with GaN quantum base structure, to be formed, and GaN quantum, which is built, to be used
GaN/ mixes the InGaN superlattice structure of In on a small quantity, which significantly affects the stress of barrier layer and answering for quantum well layer
Power can effectively improve the crystal quality of luminescent layer, effectively improve the light emission luminance of LED chip.
The undoped low temperature nitride gallium buffer layer with a thickness of 20nm~40nm；
The undoped high-temperature ammonolysis gallium with a thickness of 1500nm~3000nm；
Described mixes SiH4N type gallium nitride conductive layer with a thickness of 2500nm~4000nm；
The active illuminating layer with a thickness of 90nm~400nm；Wherein Quantum Well builds the unit of InGaN Quantum Well in area
With a thickness of 2nm~5nm；It is 9nm~20nm that wherein Quantum Well, which builds the element thickness that GaN quantum is built in area, constitutes the super of quantum base
In lattice structure GaN with a thickness of 1nm~4nm, mixed on a small quantity in superlattice structure the InGaN of In with a thickness of 1nm~4nm；
The low temperature mix the p-type aluminium gallium nitride alloy electronic barrier layer of Mg with a thickness of 10nm~50nm；
The p-type gallium nitride conductive layer for mixing Mg with a thickness of 20nm~80nm；
The p-type contact layer for mixing Mg with a thickness of 5nm~20nm；
Optimum condition:
The undoped low temperature nitride gallium buffer layer with a thickness of 25nm~30nm；
The undoped high-temperature ammonolysis gallium with a thickness of 1800nm~2500nm；
Described mixes SiH4N type gallium nitride conductive layer with a thickness of 2800nm~3000nm；
The active illuminating layer with a thickness of 200nm~300nm；Wherein Quantum Well builds the list of InGaN Quantum Well in area
Member is with a thickness of 3nm~4nm；It is 12nm~16nm that wherein Quantum Well, which builds the element thickness that GaN quantum is built in area, wherein constituting quantum
In the superlattice structure at base GaN with a thickness of 1.5nm~3nm, mix on a small quantity the InGaN of In with a thickness of 1.5nm~3nm；
The low temperature mix the p-type aluminium gallium nitride alloy electronic barrier layer of Mg with a thickness of 15nm~30nm；
The p-type gallium nitride conductive layer for mixing Mg with a thickness of 40nm~60nm；
The p-type contact layer for mixing Mg with a thickness of 10nm~15nm.
A kind of epitaxial wafer growth method improving gallium nitride based LED light-emitting diode luminance, steps are as follows:
Step 1: after patterned sapphire ALN substrate cleaning treatment, it is placed on the graphite plate in MOCVD cavity,
1000~1100 DEG C are toasted 5~10 minutes；
Step 2: cool to 500~550 DEG C, under the pressure of 400~600mbar, growth a layer thickness be 20nm~
The undoped low temperature nitride gallium buffer layer of 30nm；
Step 3: temperature being risen to 1000~1150 DEG C, under the pressure of 600~800mbar, growth a layer thickness is
The undoped high-temperature ammonolysis gallium layer of 1800nm~2500nm；
Step 4: being 1000~1100 DEG C in temperature, under the pressure of 500~700mbar, growth a layer thickness is
2000nm~3000nm's mixes SiH4N type gallium nitride conductive layer；
Step 5: when temperature is 800~850 DEG C, under the pressure of 200~500mbar, growing one layer of 1nm~3nm's
GaN, then one layer of 1nm~3nm of regrowth mixes the InGaN of In on a small quantity, alternately continuous with both this for a superlattices cellular construction
2~6 periods are grown, this continuous superlattice structure is that the quantum of active illuminating layer builds plot structure；
Step 6: when temperature is 700~750 DEG C, under the pressure of 200~500mbar, on quantum builds plot structure
The InGaN layer that a layer thickness is 2~6nm is grown, this is the quantum well region structure of active illuminating layer；
Step 7: 9~20 periods are alternately continuously grown in the way of step 5 and 6, this is the complete of active illuminating layer
Whole structure；
Step 8: when temperature is 850~900 DEG C, under the pressure of 150~400mbar, growth a layer thickness is 15nm
The low temperature of~30nm mixes the p-type aluminium gallium nitride alloy electronic barrier layer of Mg
Step 9: when temperature is 980~1000 DEG C, under the pressure of 150~400mbar, growth a layer thickness is 40nm
The p-type gallium nitride conductive layer for mixing Mg of~60nm
Step 10: when temperature is 750~800 DEG C, under the pressure of 150~400mbar, growth a layer thickness is 10nm
The p-type contact layer for mixing Mg of~15nm；
Step 11: finally annealing 15~25 minutes under nitrogen atmosphere.
The growing technology is metallo-organic compound chemical gaseous phase deposition (MOCVD) growth technology, and metal has
Machine source trimethyl gallium (TMGa) or triethyl-gallium (TEGa) are used as gallium source, and trimethyl indium (TMIn) is used as indium source, trimethyl aluminium
(TMAl) it is used as silicon source, N type dopant is silane (SiH4), and P-type dopant is two luxuriant magnesium (CP2Mg)；Carrier gas is high-purity H2Or/
And high-purity N2。
Beneficial effects of the present invention: more traditional growing method is different, and the present invention builds plot structure to luminescent layer quantum and carries out
Optimization design proposes quantum and builds the InGaN superlattice structure that In is mixed in area using GaN/ on a small quantity.The structure can significantly affect
The stress of barrier layer and the stress of Quantum Well, can effectively improve the crystal quality of luminescent layer, to effectively improve gallium nitride base light emitting two
The brightness of pole pipe provides a kind of epitaxial wafer growth method.
Detailed description of the invention
Fig. 1 is gallium oxide LED epitaxial wafer composed structure schematic diagram.
In figure: 1 patterned sapphire AlN substrate；2 undoped low temperature nitride gallium buffer layers；3 undoped high-temperature ammonolysis
Gallium；4 mix the n type gallium nitride conductive layer of SiH4；5 active illuminating layers are that the InGaN/GaN Quantum Well of periodic structure builds area；
5.1GaN quantum builds area；5.2InGaN quantum well region；5.1.1 the GaN of superlattices；5.1.2 a small amount of of superlattices mixes In's
InGaN；6 low temperature mix the p-type aluminium gallium nitride alloy electronic barrier layer of Mg；7 mix the p-type gallium nitride conductive layer of Mg；8 mix the p-type contact of Mg
Layer.
Specific embodiment
Below in conjunction with technical solution and attached drawing, a specific embodiment of the invention is further illustrated, the present embodiment is using gold
Belong to organic compound chemical vapor deposition device (MOCVD).
Embodiment 1
A kind of epitaxial wafer growth method improving gallium nitride based LED light-emitting diode luminance, comprises the following steps that:
Step 1: after patterned sapphire ALN substrate cleaning treatment, it is placed on the graphite plate in MOCVD cavity,
1035 DEG C or so are toasted 9 minutes；
Step 2: cooling to 520 DEG C, under the pressure of 500mbar, grow the low-temperature gan layer that a layer thickness is 26nm；
Step 3: temperature being risen to 1105 DEG C, under the pressure of 750mbar, grows the high temperature that a layer thickness is 2200nm
GaN layer；
Step 4: being 1065 DEG C in temperature, under the pressure of 600mbar, grow the doping SiH4 that a layer thickness is 2700nm
N-shaped high-temperature gan layer；
Step 5: when temperature is 835 DEG C, under the pressure of 300mbar, growing the GaN of one layer of 2nm, then regrowth one
Layer 2nm mixes the InGaN of In on a small quantity, and with both this for a superlattices cellular construction, alternately 4 periods of continuous growth, this is continuous
Superlattice structure is that the quantum of luminescent layer builds plot structure；
Step 6: when temperature is 735 DEG C, under the pressure of 300mbar, growing a layer thickness on quantum barrier layer is
The InGaN layer of 4nm, this is the quantum well region structure of luminescent layer；
Step 7: 13 periods are alternately continuously grown in the way of step 5 and 6, this is the complete structure of luminescent layer；
Step 8: temperature be 870 DEG C when, under the pressure of 200mbar, growth one layer mix Mg with a thickness of 23nm's
AlGaN electronic barrier layer；
Step 9: when temperature is 995 DEG C, under the pressure of 200mbar, the GaN with a thickness of 56nm of Mg is mixed in one layer of growth
Layer；
Step 10: temperature be 755 DEG C when, under the pressure of 300mbar, growth one layer mix Mg with a thickness of 13nm's
InGaN contact layer；
Step 11: finally annealing 20 minutes under nitrogen atmosphere.
It is analyzed through experiment contrast:
The crystalline quality of epitaxial material produced by the present invention is obviously improved: wherein the peak strength of PL and integrated intensity relatively pass
System method all obviously increases, and in addition EI test result also indicates that the obtained epitaxial wafer of the present invention compared with epitaxial material obtained by conventional method
Luminous intensity promotes 10%~18%.Illustrate that the crystalline quality of material improves.Compared to traditional scheme, final LED chip it is bright
Degree improves 10%-16%.
Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Pipe present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: its according to
So be possible to modify the technical solutions described in the foregoing embodiments, or to some or all of the technical features into
Row equivalent replacement；And these are modified or replaceed, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme.
Claims (5)
1. it is a kind of improve gallium nitride based LED light-emitting diode luminance epitaxial wafer, which is characterized in that the epitaxial slice structure from it is lower to
On sequence be followed successively by patterned sapphire AlN substrate；Undoped low temperature nitride gallium buffer layer；Undoped high-temperature ammonolysis gallium
Layer；Mix SiH4N type gallium nitride conductive layer；Active illuminating layer is that the InGaN/GaN Quantum Well of periodic structure builds area, wherein measuring
Sub- trap builds the InGaN for mixing In on a small quantity using the GaN/ of superlattice structure；Low temperature mixes the p-type aluminium gallium nitride alloy electronic barrier layer of Mg；It mixes
The p-type gallium nitride conductive layer of Mg；Mix the p-type contact layer of Mg；
The active illuminating layer, which is replaced by InGaN Quantum Well with GaN quantum base structure, to be formed, and GaN quantum is built few using GaN/
Amount mixes the InGaN superlattice structure of In；
The undoped low temperature nitride gallium buffer layer with a thickness of 20nm~40nm；
The undoped high-temperature ammonolysis gallium with a thickness of 1500nm~3000nm；
Described mixes SiH4N type gallium nitride conductive layer with a thickness of 2500nm~4000nm；
The active illuminating layer with a thickness of 90nm~400nm；Wherein Quantum Well builds the element thickness of InGaN Quantum Well in area
For 2nm~5nm；It is 9nm~20nm that wherein Quantum Well, which builds the element thickness that GaN quantum is built in area, constitutes the superlattices that quantum is built
In structure GaN with a thickness of 1nm~4nm, mixed on a small quantity in superlattice structure the InGaN of In with a thickness of 1nm~4nm；
The low temperature mix the p-type aluminium gallium nitride alloy electronic barrier layer of Mg with a thickness of 10nm~50nm；
The p-type gallium nitride conductive layer for mixing Mg with a thickness of 20nm~80nm；
The p-type contact layer for mixing Mg with a thickness of 5nm~20nm.
2. the epitaxial wafer according to claim 1 for improving gallium nitride based LED light-emitting diode luminance, which is characterized in that
The undoped low temperature nitride gallium buffer layer with a thickness of 25nm~30nm；
The undoped high-temperature ammonolysis gallium with a thickness of 1800nm~2500nm；
Described mixes SiH4N type gallium nitride conductive layer with a thickness of 2800nm~3000nm；
The active illuminating layer with a thickness of 200nm~300nm；Wherein Quantum Well builds the units thick of InGaN Quantum Well in area
Degree is 3nm~4nm；It is 12nm~16nm that wherein Quantum Well, which builds the element thickness that GaN quantum is built in area, wherein constituting what quantum was built
In superlattice structure GaN with a thickness of 1.5nm~3nm, mix on a small quantity the InGaN of In with a thickness of 1.5nm~3nm；
The low temperature mix the p-type aluminium gallium nitride alloy electronic barrier layer of Mg with a thickness of 15nm~30nm；
The p-type gallium nitride conductive layer for mixing Mg with a thickness of 40nm~60nm；
The p-type contact layer for mixing Mg with a thickness of 10nm~15nm.
3. a kind of epitaxial wafer growth method for improving gallium nitride based LED light-emitting diode luminance, which is characterized in that steps are as follows:
Step 1: after patterned sapphire ALN substrate cleaning treatment, it is placed on the graphite plate in MOCVD cavity, 1000~
1100 DEG C are toasted 5~10 minutes；
Step 2: cooling to 500~550 DEG C, under the pressure of 400~600mbar, growth a layer thickness is 20nm~40nm's
Undoped low temperature nitride gallium buffer layer；
Step 3: temperature being risen to 1000~1150 DEG C, under the pressure of 600~800mbar, growth a layer thickness is 1500nm
The undoped high-temperature ammonolysis gallium layer of~3000nm；
Step 4: temperature be 1000~1100 DEG C, under the pressure of 500~700mbar, growth a layer thickness for 2500nm~
4000nm's mixes SiH4N type gallium nitride conductive layer；
Step 5: when temperature is 800~850 DEG C, under the pressure of 200~500mbar, the GaN of one layer of 1nm~3nm is grown,
Then one layer of 1nm~3nm of regrowth mixes the InGaN of In on a small quantity, with both this for a superlattices cellular construction, alternately continuous growth
2~6 periods, this continuous superlattice structure are that the quantum of active illuminating layer builds plot structure；
Step 6: when temperature is 700~750 DEG C, under the pressure of 200~500mbar, being grown on quantum builds plot structure
A layer thickness is the InGaN layer of 2~5nm, this is the quantum well region structure of active illuminating layer；
Step 7: 9~20 periods are alternately continuously grown in the way of step 5 and 6, this is the complete knot of active illuminating layer
Structure；
Step 8: temperature be 850~900 DEG C when, under the pressure of 150~400mbar, growth a layer thickness for 10nm~
The low temperature of 50nm mixes the p-type aluminium gallium nitride alloy electronic barrier layer of Mg
Step 9: temperature be 980~1000 DEG C when, under the pressure of 150~400mbar, growth a layer thickness for 20nm~
The p-type gallium nitride conductive layer for mixing Mg of 80nm
Step 10: temperature be 750~800 DEG C when, under the pressure of 150~400mbar, growth a layer thickness for 5nm~
The p-type contact layer for mixing Mg of 20nm；
Step 11: finally annealing 15~25 minutes under nitrogen atmosphere.
4. a kind of epitaxial wafer growth method for improving gallium nitride based LED light-emitting diode luminance, which is characterized in that steps are as follows:
Step 1: after patterned sapphire ALN substrate cleaning treatment, it is placed on the graphite plate in MOCVD cavity, 1000~
1100 DEG C are toasted 5~10 minutes；
Step 2: cooling to 500~550 DEG C, under the pressure of 400~600mbar, growth a layer thickness is 25nm~30nm's
Undoped low temperature nitride gallium buffer layer；
Step 3: temperature being risen to 1000~1150 DEG C, under the pressure of 600~800mbar, growth a layer thickness is 1800nm
The undoped high-temperature ammonolysis gallium layer of~2500nm；
Step 4: temperature be 1000~1100 DEG C, under the pressure of 500~700mbar, growth a layer thickness for 2800nm~
3000nm's mixes SiH4N type gallium nitride conductive layer；
Step 5: when temperature is 835 DEG C, under the pressure of 300mbar, growing the GaN of one layer of 2nm, then one layer of regrowth
2nm mixes the InGaN of In on a small quantity, with both this for a superlattices cellular construction, alternately continuously grows 4 periods, this is continuous super
Lattice structure is that the quantum of luminescent layer builds plot structure；
Step 6: when temperature is 700~750 DEG C, under the pressure of 200~500mbar, being grown on quantum builds plot structure
A layer thickness is the InGaN layer of 3~4nm, this is the quantum well region structure of active illuminating layer；
Step 7: 9~20 periods are alternately continuously grown in the way of step 5 and 6, this is the complete knot of active illuminating layer
Structure；
Step 8: temperature be 850~900 DEG C when, under the pressure of 150~400mbar, growth a layer thickness for 15nm~
The low temperature of 30nm mixes the p-type aluminium gallium nitride alloy electronic barrier layer of Mg
Step 9: temperature be 980~1000 DEG C when, under the pressure of 150~400mbar, growth a layer thickness for 40nm~
The p-type gallium nitride conductive layer for mixing Mg of 60nm
Step 10: temperature be 750~800 DEG C when, under the pressure of 150~400mbar, growth a layer thickness for 10nm~
The p-type contact layer for mixing Mg of 15nm；
Step 11: finally annealing 15~25 minutes under nitrogen atmosphere.
5. the epitaxial wafer growth method according to claim 3 or 4 for improving gallium nitride based LED light-emitting diode luminance,
It is characterized in that, the growing method uses metallo-organic compound chemical gaseous phase deposition epitaxial growth method, metal organic source
Trimethyl gallium or triethyl-gallium are as gallium source, and trimethyl indium is as indium source, and for trimethyl aluminium as silicon source, N type dopant is silane,
P-type dopant is two luxuriant magnesium；Carrier gas is high-purity H2And/or high-purity N2。
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| CN110364420A (en) * | 2019-07-16 | 2019-10-22 | 北京工业大学 | A kind of insertion InGaN/GaN superlattice structure improves the epitaxial growth method of non-polar GaN quality of materials |
| CN113818087A (en) * | 2021-11-23 | 2021-12-21 | 江苏第三代半导体研究院有限公司 | Gallium nitride epitaxial wafer and growth method thereof |
| CN115050866A (en) * | 2022-08-16 | 2022-09-13 | 江苏第三代半导体研究院有限公司 | Polarization-controllable quantum dot Micro-LED homoepitaxial structure and preparation method thereof |
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| US20120153259A1 (en) * | 2007-09-10 | 2012-06-21 | Seoul Opto Device Co., Ltd. | Light emitting diode with improved structure |
| CN102820392A (en) * | 2012-08-31 | 2012-12-12 | 华灿光电股份有限公司 | Epitaxial wafer of light-emitting diode and manufacturing method thereof |
| CN105206726A (en) * | 2015-08-28 | 2015-12-30 | 山东浪潮华光光电子股份有限公司 | LED structure and growth method thereof |
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| US20120153259A1 (en) * | 2007-09-10 | 2012-06-21 | Seoul Opto Device Co., Ltd. | Light emitting diode with improved structure |
| CN102820392A (en) * | 2012-08-31 | 2012-12-12 | 华灿光电股份有限公司 | Epitaxial wafer of light-emitting diode and manufacturing method thereof |
| CN105206726A (en) * | 2015-08-28 | 2015-12-30 | 山东浪潮华光光电子股份有限公司 | LED structure and growth method thereof |
Cited By (5)
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| CN110364420A (en) * | 2019-07-16 | 2019-10-22 | 北京工业大学 | A kind of insertion InGaN/GaN superlattice structure improves the epitaxial growth method of non-polar GaN quality of materials |
| CN110364420B (en) * | 2019-07-16 | 2021-10-26 | 北京工业大学 | Epitaxial growth method for improving quality of nonpolar GaN material by inserting InGaN/GaN superlattice structure |
| CN113818087A (en) * | 2021-11-23 | 2021-12-21 | 江苏第三代半导体研究院有限公司 | Gallium nitride epitaxial wafer and growth method thereof |
| CN115050866A (en) * | 2022-08-16 | 2022-09-13 | 江苏第三代半导体研究院有限公司 | Polarization-controllable quantum dot Micro-LED homoepitaxial structure and preparation method thereof |
| CN115050866B (en) * | 2022-08-16 | 2022-11-08 | 江苏第三代半导体研究院有限公司 | Polarization-controllable quantum dot Micro-LED homoepitaxial structure and preparation method thereof |
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