CN109524521A - A kind of LED epitaxial slice and its manufacturing method - Google Patents
A kind of LED epitaxial slice and its manufacturing method Download PDFInfo
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- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
The invention discloses a kind of LED epitaxial slice and its manufacturing methods, belong to technical field of semiconductors.LED epitaxial slice includes substrate and stacks gradually low temperature buffer layer, undoped GaN layer, N-type layer, multiple quantum well layer, electronic barrier layer and p-type GaN layer over the substrate, and the LED epitaxial slice further includes the AlN layer being arranged in the p-type GaN layer.The forbidden bandwidth of AlN material is bigger than GaN material, after p-type GaN layer upper surface grows one layer of AlN, for the fermi level for being aligned two kinds of materials, the energy band of p-type GaN layer upper surface will receive regulation, and the bending direction of p-type GaN layer upper surface from becoming downwards upwards, then the hole " potential energy paddy " of script disappears herein, hole will no longer be restricted to surface, it is moved to promote hole toward the direction of multiple quantum wells, the injection efficiency in hole is improved, to improve the luminous efficiency of LED.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of LED epitaxial slice and its manufacturing method.
Background technique
LED (Light Emitting Diode, light emitting diode) is a kind of semiconductor electronic component that can be luminous.As
A kind of efficient, environmentally friendly, green New Solid lighting source, is widely applied rapidly, such as traffic lights, automobile
Inside and outside lamp, landscape light in city, cell phone back light source etc..
Epitaxial wafer is the main composition part in LED, and existing GaN base LED epitaxial wafer includes substrate and is sequentially laminated on
Low temperature buffer layer, undoped GaN layer, N-type layer, multiple quantum well layer, electronic barrier layer and P-type layer on substrate.Wherein N-type layer
For the GaN layer for mixing Si, electronics can be provided, P-type layer is to mix the GaN layer of Mg, can provide hole.When electric current injects GaN base LED
When in epitaxial wafer, the hole that the electronics and P-type layer that N-type layer provides provide is migrated under the driving of electric current to multiple quantum well layer, and
Radiation recombination shines in multiple quantum well layer.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
Since there are spontaneous polarizations inside GaN material, it will appear induction negative electrical charge in the upper surface GaN, these inductions
Negative electrical charge will lead to GaN surface energy band and be bent upwards, in LED epitaxial wafer, valence band pair that p-type GaN layer upper surface is bent upwards
It is one " potential energy paddy " for hole, partial holes will be limited in this " potential energy paddy ", it is difficult to inject multiple quantum wells hair
Light area, so that hole injection efficiency reduces, thus to causing the luminous efficiency of LED to reduce.
Summary of the invention
The embodiment of the invention provides a kind of LED epitaxial slice and its manufacturing methods, and the injection in hole can be improved
Efficiency, to improve the luminous efficiency of LED.The technical solution is as follows:
On the one hand, the embodiment of the invention provides a kind of LED epitaxial slice, the LED epitaxial slice packets
It includes substrate and stacks gradually low temperature buffer layer, undoped GaN layer, N-type layer, multiple quantum well layer, electricity over the substrate
Sub- barrier layer and p-type GaN layer, which is characterized in that the LED epitaxial slice further includes being arranged in the p-type GaN layer
AlN layer.
Further, described AlN layers with a thickness of 0.6~1.8nm.
Further, described AlN layers with a thickness of 1.2nm.
On the other hand, the present invention provides a kind of manufacturing method of LED epitaxial slice, the manufacturing method includes:
One substrate is provided；
Successively growing low temperature buffer layer, undoped GaN layer, N-type layer, multiple quantum well layer, electronics resistance over the substrate
Barrier and p-type GaN layer；
The growing AIN layer in the p-type GaN layer.
Further, described AlN layers with a thickness of 0.6~1.8nm.
Further, described AlN layers with a thickness of 1.2nm.
Further, AlN layers of the growth temperature is 800~900 DEG C.
Further, AlN layers of the growth pressure is 50~100torr.
Further, AlN layers of the growth pressure is 75torr.
Further, after having grown the p-type GaN layer, the manufacturing method further include:
The underlayer temperature is reduced to 850 DEG C, the p-type GaN layer is carried out at in-situ annealing in pure nitrogen gas atmosphere
Reason, annealing time 10min.
Technical solution provided in an embodiment of the present invention has the benefit that
By the growing AIN layer in p-type GaN layer, the forbidden bandwidth of AlN material is bigger than GaN material, the table in p-type GaN layer
It looks unfamiliar after long one layer of AlN, for the fermi level for being aligned two kinds of materials, the energy band of p-type GaN layer upper surface will receive regulation, p-type
The bending direction of GaN layer upper surface from becoming downwards upwards, then " the potential energy paddy " of script disappears, and hole will no longer be restricted to table
Face moves toward the direction of multiple quantum wells to promote hole, the injection efficiency in hole is improved, to improve the hair of LED
Light efficiency.And the AlN layers of dangling bonds density that can reduce p-type GaN layer upper surface, the recombination losses on the surface in hole are reduced,
The surface defect density of p-type GaN layer can also be reduced simultaneously, reduced in surface defect bring leak channel and non-radiative recombination
The heart, to further increase the radioluminescence efficiency of LED.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram of LED epitaxial slice provided in an embodiment of the present invention；
Fig. 2 is a kind of method flow diagram of the manufacturing method of LED epitaxial slice provided in an embodiment of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
The embodiment of the invention provides a kind of LED epitaxial slice, Fig. 1 is a kind of hair provided in an embodiment of the present invention
The structural schematic diagram of optical diode epitaxial wafer, as shown in Figure 1, LED epitaxial slice includes substrate 1 and is sequentially laminated on
Low temperature buffer layer 2, undoped GaN layer 3, N-type layer 4, multiple quantum well layer 5, electronic barrier layer 6 and p-type GaN layer on substrate 1
7。
The LED epitaxial slice further includes the AlN layer 8 being arranged in p-type GaN layer 7.
For the embodiment of the present invention by the growing AIN layer in p-type GaN layer, the forbidden bandwidth of AlN material is bigger than GaN material,
After p-type GaN layer upper surface grows one layer of AlN, for the fermi level for being aligned two kinds of materials, the energy band meeting of p-type GaN layer upper surface
Regulated and controled, the bending direction of p-type GaN layer upper surface from becoming downwards upwards, then " the potential energy paddy " of script disappears, and hole will not
It is restricted to surface again, is moved to promote hole toward the direction of multiple quantum wells, the injection efficiency in hole is improved, to mention
The high luminous efficiency of LED.And the AlN layers of dangling bonds density that can reduce p-type GaN layer upper surface, reduce the surface in hole
Recombination losses, while the surface defect density of p-type GaN layer can also be reduced, reduce surface defect bring leak channel and
Non-radiative recombination center, to further increase the radioluminescence efficiency of LED.
Further, the AlN layer 8 with a thickness of 0.6~1.8nm.Since the lattice constant of AlN material is about 0.3nm, if
The thickness of AlN layer 8 is less than 0.6nm, and the structure that may cause the AlN layer grown is not fine and close enough, band engineering and reduction defect
The effect of density is poor.If the thickness of AlN layer 8 is greater than 1.8nm, the thickness that will lead to AlN layer 8 is too thick, and impressed current is difficult to flow
Enter p-type GaN layer 7, electro-optical efficiency decline.
Preferably, AlN layer 8 with a thickness of 1.2nm.At this point, AlN layer 8 can either form fine and close structure, playing reduces P
The dangling bonds density and surface defect density of 7 upper surface of type GaN layer act on, and will not influence the inflow of impressed current.P-type GaN
The energy band that 7 upper surface of layer are bent upwards originally is regulated to be bent downwardly, and hole will no longer be restricted to surface, to promote
Hole is moved toward the direction of multiple quantum wells, the injection efficiency in hole is improved, to improve the luminous efficiency of LED.
Optionally, substrate 1 can be Sapphire Substrate.
Optionally, buffer layer 2 can be GaN layer, with a thickness of 15nm~35nm.
Optionally, undoped GaN layer 3 with a thickness of 2um~3um.
Optionally, N-type layer 4 can be to mix the GaN layer of Si, with a thickness of 2um~3um.
Optionally, multiple quantum well layer 5 is the InGaN quantum well layer 51 and GaN quantum barrier layer 52 of multiple period alternating growths.
The overall thickness of multiple quantum well layer 5 can be 130nm~170nm.
Optionally, electronic barrier layer 6 can be the AlGaN layer for mixing Mg, with a thickness of 80nm.
Optionally, p-type GaN layer 7 with a thickness of 0.2um.
The embodiment of the invention provides a kind of manufacturing methods of LED epitaxial slice, provide for manufacturing embodiment one
LED epitaxial slice, Fig. 2 is a kind of side of the manufacturing method of LED epitaxial slice provided in an embodiment of the present invention
Method flow chart, as shown in Fig. 2, the manufacturing method includes:
Step 201 provides a substrate.
In the present embodiment, substrate is sapphire, can place the substrate on graphite pallet and be sent into reaction chamber outside progress
Prolong the growth of material.
Step 201 further include:
Control reaction chamber temperature be 1050 DEG C, pressure be 200~500Torr, pure hydrogen atmosphere to Sapphire Substrate into
Row 5~6min of annealing, then carries out nitrogen treatment for Sapphire Substrate.
The present invention grows high brightness GaN-based LED epitaxial wafer with Veeco EPIK700MOCVD.Using high-purity H2 or high
The mixed gas of pure N2 or high-purity H2 and high-purity N 2 is as carrier gas, and high-purity N H3 is as the source N, trimethyl gallium (TMGa) and triethyl group
Gallium (TEGa) is used as gallium source, and trimethyl indium (TMIn) is used as indium source, and silane (SiH4) is used as N type dopant, trimethyl aluminium
(TMAl) silicon source, two luxuriant magnesium (CP are used as2Mg it) is used as P-type dopant, substrate is (0001) surface sapphire, and chamber pressure exists
Between 50torr to 600torr.
Step 202, on substrate growing low temperature buffer layer.
Specifically, reaction chamber temperature is controlled at 540 DEG C, pressure is controlled in 400torr~600torr, and growth thickness is
The low temperature GaN buffer of 25nm.
Optionally, after executing the step 202, which can also include:
Stopping is passed through TMGa, and reaction chamber temperature is increased to 1040 DEG C, is made annealing treatment in situ to low temperature buffer layer,
Annealing time is 8min.
Step 203 grows undoped GaN layer on low temperature buffer layer.
Specifically, reaction chamber temperature is controlled at 1040 DEG C, in 300~500torr, growth thickness is 2~3 for pressure control
μm undoped GaN layer.
Step 204 grows N-type layer in undoped GaN layer.
Specifically, keep growth temperature constant, in 100~300torr, growth thickness is the N of 2um~3um for pressure control
Type GaN layer.
Step 205 grows multiple quantum well layer in N-type layer.
In the present embodiment, multiple quantum well layer is the superlattice structure of multicycle, and each superlattice structure includes InGaN
Quantum well layer and the GaN quantum barrier layer being grown on InGaN quantum well layer, the overall thickness of multiple quantum well layer are 130~170nm.
Specifically, step 205 may include:
By reaction chamber temperature control at 780-800 DEG C, pressure control in 100~300Torr, growth thickness is 2.5~
The InGaN quantum well layer of 3.5nm.
By reaction chamber temperature control at 860-880 DEG C, in 100~300Torr, growth thickness is 12~14nm for pressure control
GaN quantum barrier layer.
Step 206 grows electronic barrier layer on multiple quantum well layer.
Specifically, reaction chamber temperature is controlled at 950 DEG C, pressure is controlled in 100~200Torr, growth thickness 80nm
The AlGaN electronic barrier layer for mixing Mg.The doping concentration of Mg is 5 × 10 in electronic barrier layer19cm-3。
Step 207, the growth P-type GaN layer on electronic barrier layer.
Specifically, reaction chamber temperature is controlled at 950 DEG C, pressure is controlled in 400~600Torr, growth thickness 0.2um
The p-type GaN layer for mixing Mg.The doping concentration of Mg is 5 × 10 in p-type GaN layer20cm-3。
Specifically, after having executed raw step 207, the manufacturing method further include:
Underlayer temperature is reduced to 850 DEG C, in-situ annealing processing is carried out to p-type GaN layer in pure nitrogen gas atmosphere, when annealing
Between be 10min.
Step 208, the growing AIN layer in p-type GaN layer.
Specifically, reaction chamber temperature is controlled at 800~900 DEG C, pressure is controlled in 50~100torr, and growth thickness is
The AlN layer of 0.6~1.8nm.
In the present embodiment, growth thickness is the AlN layer of 1.2nm.
After above-mentioned steps completion, the temperature of reaction chamber is down to 800 DEG C, is made annealing treatment in nitrogen atmosphere
5min is then gradually decreased to room temperature, terminates the epitaxial growth of light emitting diode.
LED epitaxial wafer provided in an embodiment of the present invention is made through over cleaning, deposition, lithography and etching subsequent machining technology
The LED chip of single 10*30mil.
It is found after test, the LED chip of 10*30mil made of the prior art, the light under 120mA driving current
By force it is 190mW, provides LED chip using the embodiment of the present invention, the light intensity under 120mA driving current is 192mW, luminous efficiency
About improve 1%.
For the embodiment of the present invention by the growing AIN layer in p-type GaN layer, the forbidden bandwidth of AlN material is bigger than GaN material,
After p-type GaN layer upper surface grows one layer of AlN, for the fermi level for being aligned two kinds of materials, the energy band meeting of p-type GaN layer upper surface
Regulated and controled, the bending direction of p-type GaN layer upper surface from becoming downwards upwards, then " the potential energy paddy " of script disappears, and hole will not
It is restricted to surface again, is moved to promote hole toward the direction of multiple quantum wells, the injection efficiency in hole is improved, to mention
The high luminous efficiency of LED.And the AlN layers of dangling bonds density that can reduce p-type GaN layer upper surface, reduce the surface in hole
Recombination losses, while the surface defect density of p-type GaN layer can also be reduced, reduce surface defect bring leak channel and
Non-radiative recombination center, to further increase the radioluminescence efficiency of LED.
The foregoing is merely a prefered embodiment of the invention, is not intended to limit the invention, all in the spirit and principles in the present invention
Within, any modification, equivalent replacement, improvement and so on should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of LED epitaxial slice, the LED epitaxial slice includes substrate and is sequentially laminated on the lining
Low temperature buffer layer, undoped GaN layer, N-type layer, multiple quantum well layer, electronic barrier layer and p-type GaN layer, feature on bottom exist
In the LED epitaxial slice further includes the AlN layer being arranged in the p-type GaN layer.
2. LED epitaxial slice according to claim 1, which is characterized in that described AlN layers with a thickness of 0.6~
1.8nm。
3. LED epitaxial slice according to claim 1, which is characterized in that described AlN layers with a thickness of 1.2nm.
4. a kind of manufacturing method of LED epitaxial slice, which is characterized in that the manufacturing method includes:
One substrate is provided；
Successively growing low temperature buffer layer, undoped GaN layer, N-type layer, multiple quantum well layer, electronic barrier layer over the substrate
With p-type GaN layer；
The growing AIN layer in the p-type GaN layer.
5. manufacturing method according to claim 4, which is characterized in that described AlN layers with a thickness of 0.6~1.8nm.
6. manufacturing method according to claim 4, which is characterized in that described AlN layers with a thickness of 1.2nm.
7. manufacturing method according to claim 4, which is characterized in that AlN layers of the growth temperature is 800~900 DEG C.
8. manufacturing method according to claim 4, which is characterized in that AlN layers of the growth pressure be 50~
100torr。
9. manufacturing method according to claim 4, which is characterized in that AlN layers of the growth pressure is 75torr.
10. manufacturing method according to claim 4, which is characterized in that after having grown the p-type GaN layer, the system
Make method further include:
The underlayer temperature is reduced to 850 DEG C, in-situ annealing processing is carried out to the p-type GaN layer in pure nitrogen gas atmosphere, is moved back
The fiery time is 10min.
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Commission number: 4W112464 Conclusion of examination: Declare partial invalidity of invention patent right No. 201811133968.6, and maintain the validity of this patent right on the basis of claims 1-8 submitted by the patentee on August 20, 2021 Decision date of declaring invalidation: 20220211 Decision number of declaring invalidation: 54093 Denomination of invention: A light-emitting diode epitaxial wafer and its manufacturing method Granted publication date: 20200414 Patentee: HC SEMITEK (ZHEJIANG) Co.,Ltd. |