CN109671814A - A kind of LED epitaxial slice and its manufacturing method - Google Patents
A kind of LED epitaxial slice and its manufacturing method Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 230000012010 growth Effects 0.000 claims abstract description 31
- 230000004888 barrier function Effects 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 230000007423 decrease Effects 0.000 claims description 14
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 12
- 239000002096 quantum dot Substances 0.000 abstract description 14
- 230000005428 wave function Effects 0.000 abstract description 13
- 230000006798 recombination Effects 0.000 abstract description 8
- 238000005215 recombination Methods 0.000 abstract description 8
- 230000005855 radiation Effects 0.000 abstract description 5
- 230000003760 hair shine Effects 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
The invention discloses a kind of LED epitaxial slice and its manufacturing methods, belong to technical field of semiconductors.LED epitaxial slice includes substrate and stacks gradually buffer layer, undoped GaN layer, N-type layer, multiple quantum well layer, electronic barrier layer, P-type layer and p-type contact layer on substrate, multiple quantum well layer includes the InGaN quantum well layer and GaN quantum barrier layer of multiple period alternating growths, and the content of In is gradually reduced along the stacking direction of epitaxial wafer in every layer of InGaN quantum well layer.On the one hand, the content of In is gradually reduced, and the conduction band of quantum well layer and valence band can be made inclined contrary, to improve the wave function overlapping degree of electrons and holes.On the other hand, In is unevenly distributed in every layer of quantum well layer, will form more quasi- quantum dots, when electrons and holes injection, it is easy to which by these quasi- quantum dot captures and radiation recombination shines, and further improves the interior quantum luminous efficiency of LED.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of LED epitaxial slice and its manufacturing method.
Background technique
LED (Light Emitting Diode, light emitting diode) is a kind of semiconductor electronic component that can be luminous.As
A kind of efficient, environmentally friendly, green New Solid lighting source, is widely applied rapidly, such as traffic lights, automobile
Inside and outside lamp, landscape light in city, cell phone back light source etc..
Epitaxial wafer is the main composition part in LED, and existing GaN base LED epitaxial wafer includes substrate and is sequentially laminated on
Low temperature buffer layer, undoped GaN layer, N-type layer, multiple quantum well layer, AlGaN electronic barrier layer and P-type layer on substrate.Wherein
Multiple quantum well layer is the multilayered structure formed by InGaN quantum well layer and GaN quantum barrier layer alternating growth.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
InGaN well layer, since material difference can generate lattice mismatch, causes the InGaN trap of multiple quantum well layer with GaN barrier layer
Compression is generated between layer and GaN barrier layer.Compression can generate piezoelectric polarization electric field, so that the band structure of multiple quantum well layer is sent out
Raw inclination, electrons and holes are assembled in the opposite direction respectively, lead to the overlapping reduction of electrons and holes wave function, and then reduce
The internal quantum efficiency of LED, i.e., so-called quantum Si Tanke effect.
Summary of the invention
The embodiment of the invention provides a kind of LED epitaxial slice and its manufacturing methods, and electrons and holes can be improved
Wave function overlapping degree, improve the interior quantum luminous efficiency of LED.The technical solution is as follows:
On the one hand, a kind of LED epitaxial slice is provided, the LED epitaxial slice includes substrate, Yi Jiyi
The secondary buffer layer being layered on the substrate, undoped GaN layer, N-type layer, multiple quantum well layer, electronic barrier layer, P-type layer and P
Type contact layer, the multiple quantum well layer include the InGaN quantum well layer and GaN quantum barrier layer of multiple period alternating growths,
The content of In is gradually reduced along the stacking direction of the epitaxial wafer in every layer of InGaN quantum well layer.
Further, the content of In is gradually decrease to 0~0.2 by 0.3~0.5 in every layer of InGaN quantum well layer.
Further, the periodicity of the multiple quantum well layer is n, 7≤n≤11.
Further, every layer of InGaN quantum well layer with a thickness of 2~3nm.
On the other hand, a kind of manufacturing method of LED epitaxial slice is provided, the manufacturing method includes:
One substrate is provided；
Successively grown buffer layer, undoped GaN layer, N-type layer over the substrate；
Multiple quantum well layer is grown in the N-type layer, the multiple quantum well layer includes the InGaN of multiple period alternating growths
Quantum well layer and GaN quantum barrier layer, in every layer of InGaN quantum well layer the content of In along the epitaxial wafer stacking direction by
It is decrescence small；
Electronic barrier layer, P-type layer and p-type contact layer are successively grown on the multiple quantum well layer.
Further, the content of In is gradually decrease to 0~0.2 by 0.3~0.5 in every layer of InGaN quantum well layer.
Further, the growth temperature of every layer of InGaN quantum well layer is gradually increased.
Further, the growth temperature of every layer of InGaN quantum well layer be gradually increased to 870 by 670~720 DEG C~
920℃。
Further, the InGaN quantum well layer is grown as the source In using trimethyl indium, grows every layer of InGaN
When quantum well layer, the flow for the trimethyl indium being passed through is gradually reduced.
Further, when growing every layer of InGaN quantum well layer, the flow of the trimethyl indium being passed through by 5000~
8000sccm/s is gradually decrease to 0~500sccm/s.
Technical solution provided in an embodiment of the present invention has the benefit that
The content of In is gradually reduced along the stacking direction of epitaxial wafer in every layer of InGaN quantum well layer in the present invention, on the one hand,
The content of In is gradually reduced, and the forbidden bandwidth of InGaN quantum well layer is gradually increased, and the energy band of InGaN quantum well layer is caused to occur
Variation, so that the conduction band of InGaN quantum well layer and valence band are inclined contrary, then electrons and holes can be towards the middle part of well layer
It is mobile, the wave function overlapping degree of electrons and holes is improved, and then improve the internal quantum efficiency of LED.On the other hand, every layer
In is unevenly distributed in InGaN quantum well layer, will form more quasi- quantum dots, the easy capture that the quasi- area quantum dot Shi Fu In is formed
The luminous point of carrier, quasi- quantum dot is more, and luminous efficiency is higher, when electrons and holes inject multiple quantum well layer, it is easy to
By these quasi- quantum dot captures and radiation recombination shines, and greatly reduces the probability that non-radiative recombination occurs for electrons and holes, into
One step improves the interior quantum luminous efficiency of LED.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram of LED epitaxial slice provided in an embodiment of the present invention；
Fig. 2 is a kind of manufacturing method flow chart of LED epitaxial slice provided in an embodiment of the present invention；
Fig. 3 is the band structure and electrons wave function schematic diagram of conventional quantum well layer；
Fig. 4 is the band structure and electrons wave function schematic diagram of quantum well layer provided by the invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
Fig. 1 is a kind of structural schematic diagram of LED epitaxial slice provided in an embodiment of the present invention, as shown in Figure 1, should
LED epitaxial slice includes substrate 1 and the buffer layer being sequentially laminated on substrate 12, undoped GaN layer 3, N-type layer
4, multiple quantum well layer 5, electronic barrier layer 6, P-type layer 7 and p-type contact layer 8.
Multiple quantum well layer 5 includes the InGaN quantum well layer 51 and GaN quantum barrier layer 52 of multiple period alternating growths.Every layer
The content of In is gradually reduced along the stacking direction of epitaxial wafer in InGaN quantum well layer 51.
The content of In is gradually reduced along the stacking direction of epitaxial wafer in every layer of InGaN quantum well layer in the present invention, on the one hand,
The content of In is gradually reduced, and the forbidden bandwidth of InGaN quantum well layer is gradually increased, and the energy band of InGaN quantum well layer is caused to occur
Variation, so that the conduction band of InGaN quantum well layer and valence band are inclined contrary, then electrons and holes can be towards the middle part of well layer
It is mobile, the wave function overlapping degree of electrons and holes is improved, and then improve the internal quantum efficiency of LED.On the other hand, every layer
In is unevenly distributed in InGaN quantum well layer, will form more quasi- quantum dots, the easy capture that the quasi- area quantum dot Shi Fu In is formed
The luminous point of carrier, quasi- quantum dot is more, and luminous efficiency is higher, when electrons and holes inject multiple quantum well layer, it is easy to
By these quasi- quantum dot captures and radiation recombination shines, and greatly reduces the probability that non-radiative recombination occurs for electrons and holes, into
One step improves the interior quantum luminous efficiency of LED.
Preferably, the content of In is gradually decrease to 0~0.2 by 0.3~0.5 in every layer of InGaN quantum well layer 51.Due to
In content in InGaN quantum well layer 51 is related with the emission wavelength of LED, therefore, by controlling the content of In, institute can be obtained
Need the LED of wavelength.
In the present embodiment, the content of In is gradually decrease to 0~0.2 by 0.3~0.5 in InGaN quantum well layer 51, corresponds to
LED be blue green light LED.
Further, the periodicity of multiple quantum well layer 5 is n, 7≤n≤11.If the value of n is excessive, Multiple-quantum will lead to
The thickness of well layer 5 is blocked up, so that the luminous efficiency of LED is lower, and will cause the waste of material.If the value of n is too small, volume
Maximum is not achieved in the thinner thickness of sub- well layer 5, the utilization rate of carrier, and the luminous efficiency that will lead to LED is lower.
Further, every layer of InGaN quantum well layer 51 with a thickness of 2~3nm.If the thickness mistake of InGaN quantum well layer 51
Thickness can then enhance the polarity effect in multiple quantum well layer 5, to reduce the luminous efficiency of LED.If InGaN quantum well layer 51
Thickness is excessively thin, then can not provide enough regions and electrons and holes progress radiation recombination is shone, also result in shining for LED
Efficiency reduces.
Further, every layer of GaN quantum barrier layer 52 with a thickness of 9~11nm.If the thickness of GaN quantum barrier layer 52 is blocked up,
The thickness that will lead to multiple quantum well layer 5 is blocked up, influences the luminous efficiency of LED, while also will increase manufacturing cost.If GaN quantum
The thickness of barrier layer 52 is excessively thin, then does not have the effect for stopping electronics overflow.
Optionally, substrate 1 can be Sapphire Substrate.
Optionally, buffer layer 2 can be GaN layer, with a thickness of 25nm.
Optionally, undoped GaN layer 3 with a thickness of 1um.
Optionally, N-type layer 4 can be to mix the GaN layer of Si, with a thickness of 2um.
Optionally, electronic barrier layer 6 can be AlInGaN layers, with a thickness of 100nm.
Optionally, P-type layer 7 can be to mix the GaN layer of Mg, with a thickness of 0.2um.
Optionally, p-type contact layer 8 can be the GaN layer of heavily doped Mg, with a thickness of 15nm.
In the present embodiment, epitaxial wafer can also include the stress release being arranged between N-type layer 4 and multiple quantum well layer 5
Layer 9, stress release layer 9 include the InGaN layer 91 and GaN layer 92 of multiple period alternating growths.InGaN layer 91 with a thickness of 2nm,
GaN layer 92 with a thickness of 30nm.
Fig. 2 is a kind of manufacturing method flow chart of LED epitaxial slice provided in an embodiment of the present invention, such as Fig. 2 institute
Show, which includes:
Step 201 provides a substrate.
Wherein, substrate is Sapphire Substrate.
The present invention uses MOCVD (Metal-organicChemicalVaporDeposition, metallo-organic compound
Learn gaseous phase deposition) epitaxial wafer is grown in equipment.Using high-purity H2Or high-purity N2As carrier gas, high-purity N H3As the source N, trimethyl gallium
(TMGa) and triethyl-gallium (TEGa) is used as gallium source, and trimethyl indium (TMIn) is used as indium source, silane (SiH4) it is used as n-type doping
Agent, trimethyl aluminium (TMAl) are used as silicon source, two luxuriant magnesium (CP2Mg) it is used as P-type dopant.
Specifically, step 201 further include:
Place the substrate into the reaction chamber of MOCVD and made annealing treatment, annealing temperature be 1050 DEG C, pressure be 200~
500torr, annealing time are 5~10min.Then nitrogen treatment is carried out to substrate.
Step 202, on substrate grown buffer layer.
In the present embodiment, buffer layer is GaN layer.
Specifically, reaction chamber temperature is dropped to 540 DEG C, pressure is controlled in 100~200torr, is grown on substrate
The buffer layer of 25nm.
Further, step 202 can also include:
After buffer growth, stopping is passed through TMGa, and reaction chamber temperature is increased to 1040 DEG C, has buffering to growth
The substrate of layer carries out in-situ annealing processing, annealing time 8min.
Step 203 grows undoped GaN layer on the buffer layer.
Specifically, reaction chamber temperature is controlled at 1080~1120 DEG C, pressure is controlled in 150~300torr, growth thickness
For the undoped GaN layer of 1um.
Step 204 grows N-type layer in undoped GaN layer.
In the present embodiment, N-type layer is to mix the GaN layer of Si.
Specifically, reaction chamber temperature is controlled at 1070~1110 DEG C, pressure is controlled in 150~300torr, growth thickness
For the N-type layer of 2um.
Step 205, the growth stress releasing layer in N-type layer.
In the present embodiment, stress release layer includes the InGaN layer and GaN layer of 6 period alternating growths.
Specifically, reaction chamber temperature is controlled at 850~900 DEG C, in 300torr, growth thickness is 2nm's for pressure control
InGaN layer.By reaction chamber temperature control at 850~900 DEG C, in 300torr, growth thickness is the GaN layer of 30nm for pressure control.
Step 206 grows multiple quantum well layer on stress release layer.
In the present embodiment, multiple quantum well layer includes that the InGaN quantum well layer of n period alternating growth and GaN quantum are built
Layer, 7≤n≤11.The content of In is gradually reduced along the stacking direction of epitaxial wafer in every layer of InGaN quantum well layer.
Specifically, the content of In is gradually decrease to 0~0.2 by 0.3~0.5 in every layer of InGaN quantum well layer.
In the present embodiment, InGaN quantum well layer is grown as the source In using trimethyl indium, grows every layer of InGaN quantum
When well layer, the flow for the trimethyl indium being passed through is gradually reduced.
Optionally, when growing every layer of InGaN quantum well layer, the flow for the trimethyl indium being passed through is by 5000~8000sccm/s
It is gradually decrease to 0~500sccm/s, so that the content of In is gradually decrease to 0 by 0.3~0.5 in every layer of InGaN quantum well layer
~0.2.
Further, the growth temperature of every layer of InGaN quantum well layer is gradually increased.
Preferably, the growth temperature of every layer of InGaN quantum well layer is gradually increased by 670~720 DEG C to 870~920 DEG C, with
So that the content of In is gradually decrease to 0~0.2 by 0.3~0.5 in every layer of InGaN quantum well layer.
Specifically, step 206 may include:
The temperature of control reaction chamber is gradually increased by 670~720 DEG C to 870~920 DEG C, and control chamber pressure is 150
~300, the flow for controlling the trimethyl indium being passed through in reaction chamber is gradually decrease to 0~500sccm/ by 5000~8000sccm/s
S, growth thickness are the InGaN quantum well layer of 2~3nm.
Controlling reaction chamber temperature is 880~930 DEG C, and control chamber pressure is 150~300torr, growth thickness for 9~
The GaN quantum barrier layer of 11nm.
Step 207 grows electronic barrier layer on multiple quantum well layer.
In the present embodiment, electronic barrier layer can be AlInGaN layers.
Specifically, reaction chamber temperature is controlled at 950~1000 DEG C, pressure is controlled in 100~200torr, growth thickness
For the electronic barrier layer of 100nm.
Step 208, the growing P-type layer on electronic barrier layer.
In the present embodiment, P-type layer is to mix the GaN layer of Mg.
Specifically, reaction chamber temperature is controlled at 900~970 DEG C, pressure is controlled in 200~600torr, and growth thickness is
The P-type layer of 0.2um.
Step 209, the growing P-type contact layer in P-type layer.
In the present embodiment, p-type contact layer is the GaN layer of heavily doped Mg.
Specifically, reaction chamber temperature is controlled at 800~900 DEG C, pressure is controlled in 200~300torr, and growth thickness is
The p-type contact layer of 15nm.
After above-mentioned steps completion, the temperature of reaction chamber is down to 650~850 DEG C, is carried out at annealing in nitrogen atmosphere
5~15min is managed, room temperature is then gradually decreased to, terminates the epitaxial growth of light emitting diode.
The content of In is gradually reduced along the stacking direction of epitaxial wafer in every layer of InGaN quantum well layer in the present invention, on the one hand,
The content of In is gradually reduced, and the forbidden bandwidth of InGaN quantum well layer is gradually increased, and the energy band of InGaN quantum well layer is caused to occur
Variation, so that the conduction band of InGaN quantum well layer and valence band are inclined contrary, then electrons and holes can be towards the middle part of well layer
It is mobile, the wave function overlapping degree of electrons and holes is improved, and then improve the internal quantum efficiency of LED.On the other hand, every layer
In is unevenly distributed in InGaN quantum well layer, will form more quasi- quantum dots, the easy capture that the quasi- area quantum dot Shi Fu In is formed
The luminous point of carrier, quasi- quantum dot is more, and luminous efficiency is higher, when electrons and holes inject multiple quantum well layer, it is easy to
By these quasi- quantum dot captures and radiation recombination shines, and greatly reduces the probability that non-radiative recombination occurs for electrons and holes, into
One step improves the interior quantum luminous efficiency of LED.
Fig. 3 is the band structure and electrons wave function schematic diagram of conventional quantum well layer, as shown in figure 3, horizontal in figure
The thickness of coordinate representation GaN epitaxial layer, ordinate indicate energy, and the content of In is to maintain constant in the quantum well layer in Fig. 3.
The band structure and electrons wave function schematic diagram of Fig. 4 quantum well layer provided by the invention, as shown in figure 4, figure
Middle abscissa indicates that the thickness of GaN epitaxial layer, ordinate indicate energy, and the content of In gradually decreases in the quantum well layer in Fig. 4.
There are four lines in Fig. 3 and Fig. 4, middle line I indicates that the conduction band of quantum well layer, line II indicate the wave function of electronics,
Line III indicates the wave function in hole, and line IV indicates the valence band of quantum well layer.Comparison diagram 3 and Fig. 4 are it is found that quantum well layer in Fig. 4
Conduction band and valence band are inclined contrary, and in Fig. 4 electrons and holes wave function overlapping degree it is higher, therefore using the present invention
The epitaxial wafer that grows of manufacturing method made of LED internal quantum efficiency it is higher, luminous efficiency is more preferable.
The foregoing is merely a prefered embodiment of the invention, is not intended to limit the invention, all in the spirit and principles in the present invention
Within, any modification, equivalent replacement, improvement and so on should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of LED epitaxial slice, the LED epitaxial slice includes substrate and is sequentially laminated on the lining
Buffer layer, undoped GaN layer, N-type layer, multiple quantum well layer, electronic barrier layer, P-type layer and p-type contact layer on bottom, it is described
Multiple quantum well layer includes the InGaN quantum well layer and GaN quantum barrier layer of multiple period alternating growths, which is characterized in that
The content of In is gradually reduced along the stacking direction of the epitaxial wafer in every layer of InGaN quantum well layer.
2. LED epitaxial slice according to claim 1, which is characterized in that in every layer of InGaN quantum well layer
The content of In is gradually decrease to 0~0.2 by 0.3~0.5.
3. LED epitaxial slice according to claim 1, which is characterized in that the periodicity of the multiple quantum well layer is
N, 7≤n≤11.
4. LED epitaxial slice according to claim 1, which is characterized in that every layer of InGaN quantum well layer
With a thickness of 2~3nm.
5. a kind of manufacturing method of LED epitaxial slice, which is characterized in that the manufacturing method includes:
One substrate is provided；
Successively grown buffer layer, undoped GaN layer, N-type layer over the substrate；
Multiple quantum well layer is grown in the N-type layer, the multiple quantum well layer includes the InGaN quantum of multiple period alternating growths
Well layer and GaN quantum barrier layer, the content of In gradually subtracts along the stacking direction of the epitaxial wafer in every layer of InGaN quantum well layer
It is small；
Electronic barrier layer, P-type layer and p-type contact layer are successively grown on the multiple quantum well layer.
6. manufacturing method according to claim 5, which is characterized in that the content of In in every layer of InGaN quantum well layer
0~0.2 is gradually decrease to by 0.3~0.5.
7. manufacturing method according to claim 5, which is characterized in that the growth temperature of every layer of InGaN quantum well layer
It is gradually increased.
8. manufacturing method according to claim 7, which is characterized in that the growth temperature of every layer of InGaN quantum well layer
It is gradually increased by 670~720 DEG C to 870~920 DEG C.
9. manufacturing method according to claim 5, which is characterized in that using trimethyl indium as described in the growth of the source In
InGaN quantum well layer, when growing every layer of InGaN quantum well layer, the flow for the trimethyl indium being passed through is gradually reduced.
10. manufacturing method according to claim 9, which is characterized in that when every layer of InGaN quantum well layer of growth, lead to
The flow of the trimethyl indium entered is gradually decrease to 0~500sccm/s by 5000~8000sccm/s.
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