CN109950372A - LED epitaxial slice and its manufacturing method - Google Patents
LED epitaxial slice and its manufacturing method Download PDFInfo
- Publication number
- CN109950372A CN109950372A CN201910117966.6A CN201910117966A CN109950372A CN 109950372 A CN109950372 A CN 109950372A CN 201910117966 A CN201910117966 A CN 201910117966A CN 109950372 A CN109950372 A CN 109950372A
- Authority
- CN
- China
- Prior art keywords
- sublayer
- layer
- quantum well
- thickness
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
The invention discloses a kind of LED epitaxial slice and its manufacturing methods, belong to technical field of semiconductors.The multiple quantum well layer of LED epitaxial slice includes the multiple quantum well layers and multiple quantum barrier layers of alternating growth, each quantum well layer includes the first sublayer, the second sublayer and third sublayer stacked gradually, and the first sublayer, the second sublayer and third sublayer are InxGa1‑xN layers, 0 < x < 1, the In component in the first sublayer and third sublayer is 25%~35% of the In component in the second sublayer.The part In component of each quantum well layer contacted with quantum barrier layer is lower, can weaken the polarity effect that quantum well layer is generated with quantum barrier layer interface due to lattice mismatch, the rate of radiative recombination of electrons and holes be improved, to improve the luminous efficiency of LED.The In constituent content at the middle part of each quantum well layer is higher, can be further improved the luminous concentration degree of LED.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of LED epitaxial slice and its manufacturing method.
Background technique
LED (Light Emitting Diode, light emitting diode) is a kind of semiconductor electronic component that can be luminous.As
A kind of efficient, environmentally friendly, green New Solid lighting source, is widely applied rapidly, such as traffic lights, automobile
Inside and outside lamp, landscape light in city, cell phone back light source etc..
Existing LED epitaxial wafer includes substrate and stacks gradually buffer layer on substrate, undoped GaN layer, N
Type layer, multiple quantum well layer, electronic barrier layer, P-type layer and p-type contact layer.Wherein multiple quantum well layer includes the multiple of alternating growth
InGaN quantum well layer and multiple GaN quantum barrier layers, the growth conditions of each quantum well layer is identical, the growth of each quantum barrier layer
Condition is identical.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
Since lattice is mismatched there are polarity effect between InGaN quantum well layer and GaN quantum barrier layer, polarity effect can be
Polarized electric field is generated in quantum well layer, leads to the energy band run-off the straight of quantum well layer, so that electrons and holes are spatially separating, is reduced
The overlapping of electron wave function and hole wave functions, reduces the radiation recombination efficiency of electrons and holes, greatly reduces LED's
Luminous efficiency.
Summary of the invention
The embodiment of the invention provides a kind of LED epitaxial slice and its manufacturing methods, and electrons and holes can be improved
Radiation recombination efficiency, to improve the luminous efficiency of LED.The technical solution is as follows:
On the one hand, the present invention provides a kind of LED epitaxial slice, the LED epitaxial slice include substrate,
And stack gradually buffer layer, undoped GaN layer, N-type layer, multiple quantum well layer, electronic barrier layer, P over the substrate
Type layer and p-type contact layer, the multiple quantum well layer include the multiple quantum well layers and multiple quantum barrier layers of alternating growth,
Each quantum well layer includes the first sublayer, the second sublayer and third sublayer stacked gradually, and described first
Sublayer, second sublayer and the third sublayer are InxGa1-xN layers, 0 < x < 1, first sublayer and the third
In component in sublayer is 25%~35% of the In component in second sublayer.
Further, the thickness of first sublayer and the third sublayer is equal, and the thickness of second sublayer is greater than
The thickness of first sublayer.
Further, the thickness ratio of first sublayer, second sublayer and the third sublayer is 1:3:1 or 1:
4:1 or 1:5:1 or 1:6:1.
On the other hand, the present invention provides a kind of manufacturing method of LED epitaxial slice, the manufacturing method includes:
One substrate is provided；
Successively growing low temperature buffer layer, undoped GaN layer, N-type layer, multiple quantum well layer, electronics resistance over the substrate
Barrier, P-type layer and p-type contact layer；
Wherein, the multiple quantum well layer includes the multiple quantum well layers and multiple quantum barrier layers of alternating growth, each described
Quantum well layer includes the first sublayer, the second sublayer and third sublayer stacked gradually, first sublayer, second sublayer
It is In with the third sublayerxGa1-xN layers, 0 < x < 1, the In component in first sublayer and the third sublayer is institute
State 25%~35% of the In component in the second sublayer.
Further, the thickness of first sublayer and the third sublayer is equal, and the thickness of second sublayer is greater than
The thickness of first sublayer.
Further, the thickness ratio of first sublayer, second sublayer and the third sublayer is 1:3:1 or 1:
4:1 or 1:5:1 or 1:6:1.
Further, the growth temperature of first sublayer is equal with the growth temperature of the third sublayer, and described second
The growth temperature of sublayer is lower than the growth temperature of first sublayer.
Further, the growth temperature of second sublayer is 10~30 DEG C lower than the growth temperature of first sublayer.
Further, the manufacturing method further include:
In the case where being mixed with the atmosphere of nitrogen and ammonia, second sublayer is grown；
Under the atmosphere for being mixed with nitrogen, ammonia and hydrogen, first sublayer and the third sublayer are grown.
Further, when growing first sublayer and the third sublayer, the flow for the hydrogen being passed through is to be passed through
The nitrogen and the ammonia total flow 1%~5%.
Technical solution provided in an embodiment of the present invention has the benefit that
By setting three-decker for each quantum well layer, and three sublayers are InxGa1-xN layers, 0 < x < 1, the
In component in one sublayer and third sublayer is 25%~35% of the In component in the second sublayer.On the one hand, each Quantum Well
The part In component of layer contacted with quantum barrier layer is lower, can weaken quantum well layer and quantum barrier layer interface since lattice loses
Polarity effect with generation, improves the rate of radiative recombination of electrons and holes, to improve the luminous efficiency of LED.Each Quantum Well
The In constituent content at the middle part of layer is higher, can be further improved the luminous concentration degree of LED.On the other hand, since In is impurity,
In component is higher, and GaN crystal quality is poorer, therefore sets the In component in the first sublayer and third sublayer in the second sublayer
In component 25%~35%, then the In component in the first sublayer and third sublayer is relatively low, be conducive to improve first son
The crystal quality of layer and third sublayer.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram of LED epitaxial slice provided in an embodiment of the present invention；
Fig. 2 is a kind of structural schematic diagram of multiple quantum well layer provided in an embodiment of the present invention；
Fig. 3 is a kind of method flow diagram of the manufacturing method of LED epitaxial slice provided in an embodiment of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
The embodiment of the invention provides a kind of LED epitaxial slice, Fig. 1 is a kind of hair provided in an embodiment of the present invention
The structural schematic diagram of optical diode epitaxial wafer, as shown in Figure 1, LED epitaxial slice includes substrate 1 and is sequentially laminated on
Buffer layer 2, undoped GaN layer 3, N-type layer 4, multiple quantum well layer 5, electronic barrier layer 6, P-type layer 7 and p-type on substrate 1 connect
Contact layer 8.
Fig. 2 is a kind of structural schematic diagram of multiple quantum well layer provided in an embodiment of the present invention, as shown in Fig. 2, multiple quantum wells
Layer 5 includes the multiple quantum well layers 51 and multiple quantum barrier layers 52 of alternating growth.Each quantum well layer 51 includes stacking gradually
The first sublayer 511, the second sublayer 512 and third sublayer 513, the first sublayer 511, the second sublayer 512 and third sublayer 513 are equal
For InxGa1-xN layers, 0 < x < 1.In component in first sublayer 511 and third sublayer 513 is the In group in the second sublayer 512
25%~35% divided.
The embodiment of the present invention is by setting three-decker for each quantum well layer, and three sublayers are InxGa1-xN
Layer, 0 < x < 1, the In component in the first sublayer and third sublayer is 25%~35% of the In component in the second sublayer.One side
The part In component contacted with quantum barrier layer in face, each quantum well layer is lower, can weaken quantum well layer and quantum barrier layer circle
Due to the polarity effect that lattice mismatch generates at face, the rate of radiative recombination of electrons and holes is improved, to improve the luminous effect of LED
Rate.The In constituent content at the middle part of each quantum well layer is higher, can be further improved the luminous concentration degree of LED.On the other hand,
Since In is impurity, In component is higher, and GaN crystal quality is poorer, therefore the In group in the first sublayer and third sublayer is set up separately
It is set to 25%~35% of the In component in the second sublayer, then the In component in the first sublayer and third sublayer is relatively low, has
Conducive to the crystal quality for improving the first sublayer and third sublayer.
If In component in the first sublayer 511 and third sublayer 513 be greater than the In component in the second sublayer 512 25%~
35%, then do not have the effect for weakening the polarity effect that quantum well layer and quantum barrier layer interface are generated due to lattice mismatch.If
In component in first sublayer 511 and third sublayer 513 is then given birth to less than 25%~35% of the In component in the second sublayer 512
The flow in the source In for needing to be passed through when long first sublayer 511 and third sublayer 513 is smaller, and when two sublayer 512 of growth regulation needs logical
The flow in the source In entered is larger, and the control difficulty that will lead to In source flux is larger, not can guarantee the precision in the source In being passed through.
Optionally, multiple quantum well layer 5 may include the n quantum well layer 51 and n quantum barrier layer 52 of alternating growth, 8≤n
≤12.If the number of plies of quantum well layer 51 and quantum barrier layer 52 is less than 8 layers, electrons and holes may be made since the number of plies is very little
Sufficient recombination luminescence is not carried out, the luminous efficiency for reducing LED is caused.If the number of plies of quantum well layer 51 and quantum barrier layer 52 is more
In 12 layers, it may be such that the distribution of electrons and holes is not concentrated, the combined efficiency of electrons and holes is lower, causes the hair of LED
Light efficiency is lower.
Illustratively, n=10, i.e. multiple quantum well layer 5 may include 10 quantum well layers 51 and 10 amount of alternating growth
Sub- barrier layer 52.
Further, the first sublayer 511 is equal with the thickness of third sublayer 513, and the thickness of the second sublayer 512 is greater than first
The thickness of sublayer 511.Due to the In component highest in the second sublayer 512, and In component is higher, defect easy to form.Therefore, it needs
By the thicker of the thickness setting of the second sublayer 512, to reduce the generation of defect.
Optionally, the thickness of the first sublayer 511 and third sublayer 513 can be 2~5nm.If the first sublayer 511 and third
The thickness of sublayer 513 is less than 2nm, then does not have and weaken the pole that quantum well layer is generated with quantum barrier layer interface due to lattice mismatch
Change the effect of effect.If the thickness of the first sublayer 511 and third sublayer 513 is greater than 5nm, the first sublayer and third will lead to
Layer in In component it is higher, prevent the In in quantum well layer from integrated distribution in the second sublayer, play improve LED shine
The effect of concentration degree.
Optionally, the thickness ratio of the first sublayer 511, the second sublayer 512 and third sublayer 513 be 1:3:1 or 1:4:1 or
Person 1:5:1 or 1:6:1.If the thickness ratio of the first sublayer 511, the second sublayer 512 and third sublayer 513 is less than 1:3:1, can lead
Cause the thickness of the second sublayer partially thin, then the In in quantum well layer is unable to integrated distribution in the second sublayer, plays the hair for improving LED
The effect of light concentration degree.If the thickness ratio of the first sublayer 511, the second sublayer 512 and third sublayer 513 is greater than 1:6:1, and can lead
It causes the thickness of the second sublayer too thick, so that the In total amount in quantum well layer is excessive, defect is formed, to influence the luminous effect of LED
Rate.
It should be noted that the thickness ratio of the first sublayer 511, the second sublayer 512 and third sublayer 513 can be according to required
The emission wavelength size of LED component is chosen.Emission wavelength is longer, and the quantum well layer In total amount needed is more, the thickness of the second sublayer
Degree is thicker, shines more longer shorter, the quantum well layer In total amount needed is fewer, and the thickness of the second sublayer is thinner.
It illustratively, can be by the first sublayer 511, the when the emission wavelength of required LED component is 445nm~460nm
The thickness ratio of two sublayers 512 and third sublayer 513 is set as 1:3:1, and the In component in the first sublayer and third sublayer is arranged
It is 25%~30% of the In component in the second sublayer.
It, can be by the first sublayer 511, the second sublayer 512 when the emission wavelength of required LED component is 460nm~470nm
It is set as 1:4:1 with the thickness ratio of third sublayer 513, sets the second sublayer for the In component in the first sublayer and third sublayer
In In component 25%~30%.
It, can be by the first sublayer 511, the second sublayer 512 when the emission wavelength of required LED component is 515nm~525nm
It is set as 1:5:1 with the thickness ratio of third sublayer 513, sets the second sublayer for the In component in the first sublayer and third sublayer
In In component 30%~35%.
It, can be by the first sublayer 511, the second sublayer 512 when the emission wavelength of required LED component is 520nm~530nm
It is set as 1:6:1 with the thickness ratio of third sublayer 513, sets the second sublayer for the In component in the first sublayer and third sublayer
In In component 30%~35%.
Optionally, the thickness of quantum well layer 51 can be 2~3nm.It, may if the thickness of quantum well layer 51 is less than 2nm
The recombination luminescences of electrons and holes in quantum well layer 51 is influenced since the thickness of quantum well layer 51 is too small, reduces the hair of LED
Light efficiency.If the thickness of quantum well layer 51 is greater than 3nm, Quantum Well may be caused since the thickness of quantum well layer 51 is too big
More stress are generated in layer 51, influence the crystal quality of quantum well layer 51 to influence the luminous efficiency of LED.
Optionally, the thickness of quantum barrier layer 52 can be 9~20nm.It, may if the thickness of quantum barrier layer 52 is less than 9nm
Cause the crystal quality improvement of the entirety of multiple quantum well layer 5 poor since the thickness of quantum barrier layer 52 is too small.If quantum is built
The thickness of layer 52 is greater than 20nm, it is easy to influence carrier and normally migrate, play blocking work to the compound of electrons and holes
With reducing the luminous efficiency of LED.
Optionally, substrate 1 can be Sapphire Substrate.
Optionally, buffer layer 2 can be AlN layers, with a thickness of 15~35nm.
Optionally, undoped GaN layer 3 with a thickness of 1~3um.
Optionally, N-type layer 4 can be to mix the GaN layer of Si, with a thickness of 1~5um.
Optionally, electronic barrier layer 6 can be the AlGaN layer for mixing Mg, with a thickness of 20~30nm.
Optionally, P-type layer 7 can be to mix the GaN layer of Mg, with a thickness of 10~30nm.
Optionally, p-type contact layer 8 can be the GaN layer of heavy doping Mg, and with a thickness of 30~50nm, the doping concentration of Mg is big
In or equal to 1*1020cm-3,
Optionally, which can also include being arranged between multiple quantum well layer 5 and electronic barrier layer 6
Low temperature P-type layer 9, low temperature P-type layer 9 can be to mix the GaN layer of Mg, with a thickness of 10~40um.
The embodiment of the invention provides a kind of manufacturing methods of LED epitaxial slice, provide for manufacturing embodiment one
LED epitaxial slice, Fig. 3 is a kind of side of the manufacturing method of LED epitaxial slice provided in an embodiment of the present invention
Method flow chart, as shown in figure 3, the manufacturing method includes:
Step 301 provides a substrate.
In the present embodiment, substrate is sapphire, can place the substrate on graphite pallet and be sent into reaction chamber outside progress
Prolong the growth of material.
Step 301 further include:
Control reaction chamber temperature be 1050 DEG C, pressure be 200~500Torr, pure hydrogen atmosphere to Sapphire Substrate into
Row 5~6min of annealing, then carries out nitrogen treatment for Sapphire Substrate.
The present invention grows high brightness GaN-based LED epitaxial wafer with Veeco EPIK700MOCVD.Using high-purity H2 or high
The mixed gas of pure N2 or high-purity H2 and high-purity N 2 is as carrier gas, and high-purity N H3 is as the source N, trimethyl gallium (TMGa) and triethyl group
Gallium (TEGa) is used as gallium source, and trimethyl indium (TMIn) is used as indium source, and silane (SiH4) is used as N type dopant, trimethyl aluminium
(TMAl) silicon source, two luxuriant magnesium (CP are used as2Mg it) is used as P-type dopant, substrate is (0001) surface sapphire, and chamber pressure exists
Between 50torr to 600torr.
Step 302, on substrate grown buffer layer.
Wherein, buffer layer is AlN layers.
Specifically, substrate is placed into PVD (Physical Vapor Deposition, physical vapour deposition (PVD)) equipment
In reaction chamber, using PVD method growing AIN buffer layer, comprising: the reaction cavity temperature of PVD equipment is adjusted to 400~700 DEG C,
Sputtering power is adjusted to 3000~5000W, and pressure adjusts most 1~10mtorr, grows the AlN buffer layer of 15~35nm thickness.
It should be noted that undoped GaN layer, N-type layer, multiple quantum well layer, low temperature P-type layer, electronics in epitaxial layer
Barrier layer, P-type layer and p-type contact layer can use MOCVD (Metal-organic Chemical Vapor
Deposition, metallo-organic compound chemical gaseous phase deposition) method growth.It in specific implementation, is usually to place the substrate in stone
It is sent on black pallet in the reaction chamber of MOCVD device and carries out the growth of epitaxial material, therefore the temperature controlled in above-mentioned growth course
Degree and pressure actually refer to the temperature and pressure in reaction chamber.Specifically, using trimethyl gallium or trimethyl second as gallium source,
Boron triethyl is as boron source, and high-purity ammonia is as nitrogen source, and trimethyl indium is as indium source, and trimethyl aluminium is as silicon source, N type dopant
Silane is selected, P-type dopant selects two luxuriant magnesium.
Step 303 grows undoped GaN layer on the buffer layer.
Illustratively, reaction chamber temperature is controlled at 1000~1200 DEG C, in 100~500torr, growth is thick for pressure control
Degree is the undoped GaN layer of 1~3um.
Step 304 grows N-type layer in undoped GaN layer.
Wherein, N-type layer is to mix the GaN layer of Si, and Si doping concentration can be 1018cm-3~1020cm-3。
Illustratively, reaction chamber temperature is controlled at 1000~1200 DEG C, in 100~300torr, growth is thick for pressure control
Degree is the N-type GaN layer of 1~5um.
Step 305 grows multiple quantum well layer in N-type layer.
In the present embodiment, multiple quantum well layer includes the multiple quantum well layers and multiple quantum barrier layers of alternating growth.Each
Quantum well layer includes the first sublayer, the second sublayer and third sublayer stacked gradually, the first sublayer, the second sublayer and third
Layer is InxGa1-xN layers, 0 < x < 1.In component in first sublayer and third sublayer is the In component in the second sublayer
25%~35%.
Optionally, multiple quantum well layer may include the n quantum well layer and n quantum barrier layer of alternating growth, 8≤n≤12.
In the present embodiment, n=10, i.e. multiple quantum well layer may include 10 quantum well layers and 10 amounts of alternating growth
Sub- barrier layer.
Further, the thickness of the first sublayer and third sublayer is equal, and the thickness of the second sublayer is greater than the thickness of the first sublayer
Degree.
Optionally, the thickness of the first sublayer and third sublayer can be 2~5nm.
Optionally, the thickness ratio of the first sublayer, the second sublayer and third sublayer be 1:3:1 or 1:4:1 or 1:5:1 or
Person 1:6:1.
It should be noted that the thickness of the first sublayer, the second sublayer and third sublayer is than can be according to required LED component
Emission wavelength size is chosen.Emission wavelength is longer, and the quantum well layer In total amount needed is more, and the thickness of the second sublayer is thicker, hair
The longer light the shorter, and the quantum well layer In total amount needed is fewer, and the thickness of the second sublayer is thinner.
It illustratively, can be by the first sublayer, second when the emission wavelength of required LED component is 445nm~460nm
The thickness of sublayer and third sublayer ratio is set as 1:3:1, sets the second son for the In component in the first sublayer and third sublayer
25%~30% of In component in layer.
It, can be by the first sublayer, the second sublayer and third when the emission wavelength of required LED component is 460nm~470nm
The thickness ratio of sublayer is set as 1:4:1, the In group set the In component in the first sublayer and third sublayer in the second sublayer
25%~30% divided.
It, can be by the first sublayer, the second sublayer and third when the emission wavelength of required LED component is 515nm~525nm
The thickness ratio of sublayer is set as 1:5:1, the In group set the In component in the first sublayer and third sublayer in the second sublayer
30%~35% divided.
It, can be by the first sublayer, the second sublayer and third when the emission wavelength of required LED component is 520nm~530nm
The thickness ratio of sublayer is set as 1:6:1, the In group set the In component in the first sublayer and third sublayer in the second sublayer
30%~35% divided.
In the present embodiment, the thickness of quantum well layer can be 2~3nm, and the thickness of quantum barrier layer can be 9~20nm.
Illustratively, step 305 may include:
Reaction chamber temperature is adjusted to 720~820 DEG C, chamber pressure is controlled in 100~300torr, grown quantum trap
Layer.
Reaction chamber temperature is adjusted to 850~950 DEG C, chamber pressure control grows GaN quantum in 100~300torr
Barrier layer.
Further, the growth temperature of the first sublayer is equal with the growth temperature of third sublayer, the growth temperature of the second sublayer
Degree is lower than the growth temperature of the first sublayer.Since In is difficult effectively to mix in GaN material, and favors low temperature is in the doping of In, because
This is lower by the growth temperature setting of the second sublayer, is conducive to the doping of In in the second sublayer, so as to realize the second son
In component highest in layer.
Optionally, the growth temperature of the second sublayer is 10~30 DEG C lower than the growth temperature of the first sublayer.It is more advantageous at this time
In, which is mixed, enables the In integrated distribution in quantum well layer in the second sublayer in the second sublayer (In be easy low temperature mix),
Improve the luminous concentration degree of LED.
Optionally, step 305 can also include:
In the case where being mixed with the atmosphere of nitrogen and ammonia, two sublayer of growth regulation.It is being mixed with nitrogen, ammonia and hydrogen
Under atmosphere, one sublayer of growth regulation and third sublayer.
Since the growth temperature of quantum well layer is lower, more carbon and oxygen impurities can be introduced during the growth process, is influenced more
The crystal quality of quantum well layer, the final luminous intensity for influencing LED.Therefore the embodiment of the present invention by one sublayer of growth regulation and
When third sublayer, it is passed through a small amount of hydrogen, advantageously reduces the content of carbon and oxygen impurities in quantum well layer, so as to improve quantum
Well layer surface topography and crystal quality improve the interface clarity of quantum well layer and quantum barrier layer, and then improve multiple quantum well layer
Crystal quality, it is final to improve LED luminous efficiency.
Further, one sublayer of growth regulation and when third sublayer, the flow for the hydrogen being passed through is the nitrogen and ammonia being passed through
Total flow 1%~5%.If the flow for the hydrogen being passed through is less than the 1% of the total flow of the nitrogen and ammonia that are passed through, rise not
To the effect for the crystal quality for improving multiple quantum well layer.If the flow for the hydrogen being passed through is greater than total stream of the nitrogen and ammonia that are passed through
It is excessively high to will lead to hydrogen content for the 5% of amount, and hydrogen has stronger reproducibility, and the In that will lead in quantum well layer is precipitated, shape
At impurity, Quantum Well crystal quality is influenced, the final luminous efficiency for influencing LED.
Step 306, the growing low temperature P-type layer on multiple quantum well layer.
Wherein, low temperature P-type layer can be to mix the GaN layer of Mg, with a thickness of 10~40um.
Illustratively, reaction chamber temperature is controlled at 700~800 DEG C, pressure is controlled in 100~600Torr, growth thickness
For the low temperature P-type layer of 10~40um.
Step 307 grows electronic barrier layer in low temperature P-type layer.
Wherein, electronic barrier layer is the AlGaN layer for mixing Mg, and the doping concentration of Mg is less than 10 in electronic barrier layer19cm-3。
Illustratively, reaction chamber temperature is controlled at 900~1000 DEG C, in 100~300Torr, growth is thick for pressure control
Degree is the electronic barrier layer of 20~30nm.
Step 308, the growing P-type layer on electronic barrier layer.
Wherein, P-type layer is to mix the GaN layer of Mg, and the doping concentration of Mg is greater than or equal to 10 in P-type layer20cm-3
Illustratively, reaction chamber temperature is controlled at 900~980 DEG C, pressure is controlled in 300~600Torr, growth thickness
For the P-type layer of 10~30nm.
Step 309, the growing P-type contact layer in P-type layer.
Wherein, p-type contact layer can be the GaN layer of heavy doping Mg, and the doping concentration of Mg is greater than or equal to 1*1020cm-3。
Illustratively, reaction chamber temperature is controlled at 850~1050 DEG C, in 100~600Torr, growth is thick for pressure control
Degree is the p-type contact layer of 30~50nm.
After above-mentioned steps completion, the temperature of reaction chamber is down to 650~850 DEG C, is carried out at annealing in nitrogen atmosphere
5~15min is managed, room temperature is then gradually decreased to, terminates the epitaxial growth of light emitting diode.
The embodiment of the present invention is by setting three-decker for each quantum well layer, and three sublayers are InxGa1-xN
Layer, 0 < x < 1, the In component in the first sublayer and third sublayer is 25%~35% of the In component in the second sublayer.One side
The part In component contacted with quantum barrier layer in face, each quantum well layer is lower, can weaken quantum well layer and quantum barrier layer circle
Due to the polarity effect that lattice mismatch generates at face, the rate of radiative recombination of electrons and holes is improved, to improve the luminous effect of LED
Rate.The In constituent content at the middle part of each quantum well layer is higher, can be further improved the luminous concentration degree of LED.On the other hand,
Since In is impurity, In component is higher, and GaN crystal quality is poorer, therefore the In group in the first sublayer and third sublayer is set up separately
It is set to 25%~35% of the In component in the second sublayer, then the In component in the first sublayer and third sublayer is relatively low, has
Conducive to the crystal quality for improving the first sublayer and third sublayer.
The foregoing is merely a prefered embodiment of the invention, is not intended to limit the invention, all in the spirit and principles in the present invention
Within, any modification, equivalent replacement, improvement and so on should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of LED epitaxial slice, the LED epitaxial slice includes substrate and is sequentially laminated on the lining
Buffer layer, undoped GaN layer, N-type layer, multiple quantum well layer, electronic barrier layer, P-type layer and p-type contact layer on bottom, it is described
Multiple quantum well layer includes the multiple quantum well layers and multiple quantum barrier layers of alternating growth, which is characterized in that
Each quantum well layer includes the first sublayer, the second sublayer and third sublayer stacked gradually, first sublayer,
Second sublayer and the third sublayer are InxGa1-xN layers, 0 < x < 1, in first sublayer and the third sublayer
In component be 25%~35% of the In component in second sublayer.
2. LED epitaxial slice according to claim 1, which is characterized in that first sublayer and third
The thickness of layer is equal, and the thickness of second sublayer is greater than the thickness of first sublayer.
3. LED epitaxial slice according to claim 2, which is characterized in that first sublayer, second son
Layer and the thickness ratio of the third sublayer are 1:3:1 or 1:4:1 or 1:5:1 or 1:6:1.
4. a kind of manufacturing method of LED epitaxial slice, which is characterized in that the manufacturing method includes:
One substrate is provided；
Over the substrate successively growing low temperature buffer layer, undoped GaN layer, N-type layer, multiple quantum well layer, electronic barrier layer,
P-type layer and p-type contact layer；
Wherein, the multiple quantum well layer includes the multiple quantum well layers and multiple quantum barrier layers of alternating growth, each quantum
Well layer includes the first sublayer, the second sublayer and third sublayer stacked gradually, first sublayer, second sublayer and institute
Stating third sublayer is InxGa1-xN layers, 0 < x < 1, the In component in first sublayer and the third sublayer is described
25%~35% of In component in two sublayers.
5. manufacturing method according to claim 4, which is characterized in that the thickness of first sublayer and the third sublayer
Equal, the thickness of second sublayer is greater than the thickness of first sublayer.
6. manufacturing method according to claim 5, which is characterized in that first sublayer, second sublayer and described
The thickness ratio of third sublayer is 1:3:1 or 1:4:1 or 1:5:1 or 1:6:1.
7. manufacturing method according to claim 4, which is characterized in that the growth temperature and the third of first sublayer
The growth temperature of sublayer is equal, and the growth temperature of second sublayer is lower than the growth temperature of first sublayer.
8. manufacturing method according to claim 7, which is characterized in that the growth temperature of second sublayer is than described first
The growth temperature of sublayer is 10~30 DEG C low.
9. manufacturing method according to claim 4, which is characterized in that the manufacturing method further include:
In the case where being mixed with the atmosphere of nitrogen and ammonia, second sublayer is grown；
Under the atmosphere for being mixed with nitrogen, ammonia and hydrogen, first sublayer and the third sublayer are grown.
10. manufacturing method according to claim 9, which is characterized in that grow first sublayer and the third sublayer
When, the flow for the hydrogen being passed through is the 1%~5% of the nitrogen being passed through and the total flow of the ammonia.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910117966.6A CN109950372B (en) | 2019-02-15 | 2019-02-15 | Light emitting diode epitaxial wafer and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910117966.6A CN109950372B (en) | 2019-02-15 | 2019-02-15 | Light emitting diode epitaxial wafer and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109950372A true CN109950372A (en) | 2019-06-28 |
| CN109950372B CN109950372B (en) | 2020-08-14 |
Family
ID=67007974
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910117966.6A Active CN109950372B (en) | 2019-02-15 | 2019-02-15 | Light emitting diode epitaxial wafer and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109950372B (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110718612A (en) * | 2019-08-30 | 2020-01-21 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer and manufacturing method thereof |
| CN110993753A (en) * | 2019-11-22 | 2020-04-10 | 华灿光电(苏州）有限公司 | Light emitting diode epitaxial wafer and manufacturing method thereof |
| CN111029444A (en) * | 2019-12-18 | 2020-04-17 | 马鞍山杰生半导体有限公司 | LED epitaxial structure and preparation method thereof |
| CN111326614A (en) * | 2020-03-07 | 2020-06-23 | 孙蕾蕾 | Method for improving luminous efficiency of outdoor lighting source |
| CN111785817A (en) * | 2020-08-25 | 2020-10-16 | 北京蓝海创芯智能科技有限公司 | InGaN/(In) GaN quantum well structure and method for improving luminous uniformity of quantum well |
| CN112531082A (en) * | 2020-11-04 | 2021-03-19 | 华灿光电（浙江）有限公司 | Micro light-emitting diode epitaxial wafer and manufacturing method thereof |
| CN113193083A (en) * | 2021-03-16 | 2021-07-30 | 华灿光电（浙江）有限公司 | Preparation method of light emitting diode epitaxial wafer |
| CN114597293A (en) * | 2022-05-06 | 2022-06-07 | 江西兆驰半导体有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060086932A1 (en) * | 2004-10-26 | 2006-04-27 | Samsung Electro-Mechanics Co., Ltd. | Nitride based semiconductor device |
| CN106098883A (en) * | 2016-06-27 | 2016-11-09 | 山东浪潮华光光电子股份有限公司 | A kind of quantum well structure, a kind of LED epitaxial structure and growing method thereof |
| CN107919422A (en) * | 2017-11-16 | 2018-04-17 | 李丹丹 | Backlit display screen light emitting diode and preparation method thereof |
-
2019
- 2019-02-15 CN CN201910117966.6A patent/CN109950372B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060086932A1 (en) * | 2004-10-26 | 2006-04-27 | Samsung Electro-Mechanics Co., Ltd. | Nitride based semiconductor device |
| CN106098883A (en) * | 2016-06-27 | 2016-11-09 | 山东浪潮华光光电子股份有限公司 | A kind of quantum well structure, a kind of LED epitaxial structure and growing method thereof |
| CN107919422A (en) * | 2017-11-16 | 2018-04-17 | 李丹丹 | Backlit display screen light emitting diode and preparation method thereof |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110718612A (en) * | 2019-08-30 | 2020-01-21 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer and manufacturing method thereof |
| CN110718612B (en) * | 2019-08-30 | 2021-08-06 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer and manufacturing method thereof |
| CN110993753A (en) * | 2019-11-22 | 2020-04-10 | 华灿光电(苏州）有限公司 | Light emitting diode epitaxial wafer and manufacturing method thereof |
| CN110993753B (en) * | 2019-11-22 | 2021-03-02 | 华灿光电(苏州）有限公司 | Light emitting diode epitaxial wafer and manufacturing method thereof |
| CN111029444A (en) * | 2019-12-18 | 2020-04-17 | 马鞍山杰生半导体有限公司 | LED epitaxial structure and preparation method thereof |
| CN111326614A (en) * | 2020-03-07 | 2020-06-23 | 孙蕾蕾 | Method for improving luminous efficiency of outdoor lighting source |
| CN111326614B (en) * | 2020-03-07 | 2021-07-09 | 孙蕾蕾 | Method for improving luminous efficiency of outdoor lighting source |
| CN111785817A (en) * | 2020-08-25 | 2020-10-16 | 北京蓝海创芯智能科技有限公司 | InGaN/(In) GaN quantum well structure and method for improving luminous uniformity of quantum well |
| CN112531082A (en) * | 2020-11-04 | 2021-03-19 | 华灿光电（浙江）有限公司 | Micro light-emitting diode epitaxial wafer and manufacturing method thereof |
| CN112531082B (en) * | 2020-11-04 | 2021-10-01 | 华灿光电（浙江）有限公司 | Micro light-emitting diode epitaxial wafer and manufacturing method thereof |
| CN113193083A (en) * | 2021-03-16 | 2021-07-30 | 华灿光电（浙江）有限公司 | Preparation method of light emitting diode epitaxial wafer |
| CN114597293A (en) * | 2022-05-06 | 2022-06-07 | 江西兆驰半导体有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109950372B (en) | 2020-08-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109950372A (en) | LED epitaxial slice and its manufacturing method | |
| CN110718612B (en) | Light emitting diode epitaxial wafer and manufacturing method thereof | |
| CN109830580B (en) | Gallium nitride-based light emitting diode epitaxial wafer and manufacturing method thereof | |
| CN108461592B (en) | A kind of LED epitaxial slice and its manufacturing method | |
| CN106784210A (en) | A kind of epitaxial wafer of light emitting diode and preparation method thereof | |
| CN109950368A (en) | Gallium nitride based LED epitaxial slice and its manufacturing method | |
| CN109545924B (en) | Light emitting diode epitaxial wafer and manufacturing method thereof | |
| CN109119515A (en) | A kind of LED epitaxial slice and its manufacturing method | |
| CN109216519A (en) | A kind of LED epitaxial slice and its manufacturing method | |
| CN109671814A (en) | A kind of LED epitaxial slice and its manufacturing method | |
| CN106611808A (en) | Growing method for light-emitting diode epitaxial wafer | |
| CN107195737A (en) | A kind of LED epitaxial slice and its manufacture method | |
| CN109920896A (en) | Gallium nitride based LED epitaxial slice and its manufacturing method | |
| CN108447952B (en) | Light emitting diode epitaxial wafer and preparation method thereof | |
| CN108831978A (en) | A kind of LED epitaxial slice and its manufacturing method | |
| CN115986018A (en) | Epitaxial wafer, epitaxial wafer preparation method and light emitting diode | |
| CN113328015B (en) | Method for manufacturing light emitting diode chip with improved brightness | |
| CN114695610A (en) | GaN-based LED epitaxial wafer, epitaxial growth method and LED chip | |
| CN107068824A (en) | The epitaxial wafer and its manufacture method of a kind of light emitting diode | |
| WO2024002094A1 (en) | Light-emitting diode and epitaxial structure thereof | |
| CN108281519A (en) | A kind of LED epitaxial slice and its manufacturing method | |
| CN108470808A (en) | A kind of LED epitaxial slice and its manufacturing method | |
| CN105870278B (en) | A kind of gallium nitride based light emitting diode and preparation method thereof | |
| CN112366256A (en) | Light emitting diode epitaxial wafer and manufacturing method thereof | |
| CN113113515B (en) | Growth method of light emitting diode epitaxial wafer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |