CN111326614B - Method for improving luminous efficiency of outdoor lighting source - Google Patents
Method for improving luminous efficiency of outdoor lighting source Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 22
- 229910052738 indium Inorganic materials 0.000 claims abstract description 82
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 82
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 55
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 55
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 34
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 33
- 230000004888 barrier function Effects 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 18
- 230000003247 decreasing effect Effects 0.000 claims description 12
- 230000001795 light effect Effects 0.000 claims description 2
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
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- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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Abstract
The invention provides a method for improving the luminous efficiency of an outdoor lighting source, which comprises the steps of sequentially forming a semi-crystalline layer, an undoped layer, an N-type doped layer, an active layer and a P-type doped layer on a substrate; the active layer comprises periodically overlapped quantum well layers and quantum barrier layers, the quantum well layers are indium gallium nitride layers, the quantum barrier layers are gallium nitride layers, an indium source is introduced after at least one of the quantum well layers is formed, a carbon source is introduced after the indium source is introduced, and the quantum barrier layers are formed after the carbon source is introduced. According to the invention, the indium source is introduced after the quantum well layer is formed, the indium treatment layer is formed on the surface of indium gallium nitride, the carbon source is introduced into the indium treatment layer, the carbon source is decomposed at high temperature and contacts with the indium treatment layer to form the carbon two-dimensional structure, and the indium treatment layer and the carbon two-dimensional structure are combined, so that the depth of a potential well of the quantum well layer is further increased, the concentration and the mobility of a carrier are improved, the internal quantum efficiency is further improved, and the light efficiency of a light source is improved.
Description
Technical Field
The invention relates to the technical field of automobile illumination, in particular to a method for improving the luminous efficiency of an outdoor illumination light source.
Background
And a smart city is constructed, green illumination is promoted, and the sustainable development of the city can be realized. In recent years, driven by governments, the LED outdoor lighting industry has gained much more development, especially in the fields of road lighting and landscape lighting. Through the exploration and development of many years, the technology in the application process is continuously innovated and broken through, the level is continuously improved, the quality accumulation is completed, the price is reduced to some extent, and the market is continuously and stably increased.
As the LED outdoor lighting market has huge potential, large and small manufacturers at home and abroad dispute and enter the LED outdoor lighting market, and homogeneous products are layered endlessly, so that the product quality is uneven, the performance is unstable, and the LED outdoor lighting market becomes a puzzling point of the current LED industry pattern. In consideration of special use conditions of outdoor products, the outdoor LED professional lamp must pay more attention to light efficiency improvement and product quality.
Disclosure of Invention
The invention aims to provide a method for improving the luminous efficiency of an outdoor lighting source, which can effectively improve the luminous efficiency and the performance of the outdoor lighting source.
The technical problem to be solved by the invention is realized by adopting the following technical scheme:
the method for improving the luminous efficiency of the outdoor lighting source comprises the steps of providing a substrate, forming a semi-crystalline layer on the substrate, forming an undoped layer on the semi-crystalline layer, forming an N-type doped layer on the undoped layer, forming an active layer on the N-type doped layer, and forming a P-type doped layer on the active layer; the active layer comprises periodically overlapped quantum well layers and quantum barrier layers, the quantum well layers are indium gallium nitride layers, the quantum barrier layers are gallium nitride layers, an indium source is introduced after at least one of the quantum well layers is formed, a carbon source is introduced after the indium source is introduced, and the quantum barrier layers are formed after the carbon source is introduced.
Optionally, after the quantum well layer is formed, an aluminum nitride layer is formed before the indium source is introduced.
Optionally, the formed aluminum nitride layer is located on one side of the N-type doped layer.
Optionally, the aluminum nitride layer is formed on the quantum well layer closest to the N-type doped layer.
Optionally, an indium source is introduced after each quantum well layer is formed in the active layer, a carbon source is introduced after the indium source is introduced, and a quantum barrier layer is formed after the carbon source is introduced.
Optionally, the flow of the indium source introduced into the active layer from the N-type doping layer side to the P-type doping layer side after each quantum well layer is formed is gradually increased.
Optionally, the flow of the carbon source introduced into the active layer from the N-type doping layer side to the P-type doping layer side after each quantum well layer is formed is gradually reduced.
Optionally, the step of introducing the carbon source further comprises introducing a silicon source.
Optionally, the time of introducing the silicon source is continued until the growth of the quantum barrier layer is finished.
Optionally, the flow rate of the silicon source is gradually decreased.
The invention has the beneficial effects that: according to the invention, the indium source is introduced after the quantum well layer is formed, the indium treatment layer is formed on the surface of indium gallium nitride, the carbon source is introduced into the indium treatment layer, the carbon source is decomposed at high temperature and contacts with the indium treatment layer to form the carbon two-dimensional structure, and the indium treatment layer and the carbon two-dimensional structure are combined, so that the depth of a potential well of the quantum well layer is further increased, the concentration and the mobility of a carrier are improved, the internal quantum efficiency is further improved, and the light efficiency of a light source is improved.
Drawings
FIG. 1 is a schematic view of the structure of a product obtained according to the present invention;
fig. 2 to 4 are schematic views of the structure of the product obtained according to the preferred embodiment of the present invention.
Detailed Description
The method for improving the luminous efficiency of an outdoor lighting source provided by the invention is described in more detail with reference to the attached drawings, wherein the preferred embodiments of the invention are shown, and it is understood that the invention described herein can be modified by those skilled in the art, and the advantageous effects of the invention can still be achieved. Accordingly, the following description should be construed as broadly as possible to those skilled in the art and not as limiting the invention.
The invention is described in more detail in the following paragraphs by way of example with reference to the accompanying drawings. Advantages and features of the present invention will become apparent from the following description and from the claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
The core of the invention is to provide a method for improving the luminous efficiency of an outdoor lighting source, which comprises the steps of providing a substrate 1, forming a semi-crystalline layer 2 on the substrate 1, forming an undoped layer 3 on the semi-crystalline layer 2, forming an N-type doped layer 4 on the undoped layer 3, forming an active layer 5 on the N-type doped layer 4, and forming a P-type doped layer 6 on the active layer 5; the active layer 5 includes periodically overlapped quantum well layers 51 and quantum barrier layers 52, the quantum well layers are indium gallium nitride layers, the quantum barrier layers are gallium nitride layers, an indium source is introduced after at least one of the quantum well layers 51 is formed, a carbon source is introduced after the indium source is introduced, and the quantum barrier layers 52 are formed after the carbon source is introduced, so that the obtained product structure is shown in fig. 1.
The quantum barrier layer is a gallium nitride layer, the gallium nitride is a direct band gap semiconductor material, the forbidden band width at room temperature is 3.39eV, the quantum well layer is an indium gallium nitride layer, the indium gallium nitride layer is formed by introducing an indium source in the gallium nitride forming process, the forbidden band width is gradually reduced along with the increase of the indium content, the depth of a formed potential well is gradually increased, electrons and holes are compositely emitted in the quantum well layer, in the periodically overlapped quantum well layer and quantum barrier layer, the light emitting quantum well layer is mainly concentrated on one side close to a P-type doping layer, mainly because the electron mobility is larger than the hole mobility, the formation of P-type doping is more difficult than the formation of N-type doping, so that the hole concentration is lower than the electron concentration, the indium source is introduced after the quantum well layer is formed, an indium processing layer is formed on the indium gallium nitride surface, a carbon source is introduced on the indium processing layer, the carbon source is decomposed at high, the indium treatment layer is combined with the carbon two-dimensional structure, so that on one hand, the depth of a potential well of the quantum well layer is further increased, the concentration and the mobility of carriers are improved, the internal quantum efficiency is improved, and the light efficiency of a light source is improved.
In this embodiment, the substrate 1 is made of sapphire, silicon carbide, silicon, gallium nitride, or the like.
The substrate material is an important factor for determining performance indexes such as light source color, brightness, service life and the like, and the roughness, the thermal expansion coefficient, the thermal conduction coefficient and the influence of polarity of the surface of the substrate material, the processing requirement of the surface and whether the crystal lattice is matched with the crystal lattice of an epitaxial material are closely related to the light source luminous efficiency and stability.
In this embodiment, the substrate 1 is a flat plate or a patterned substrate, the light scattering can be improved by using the patterned substrate, the pattern of the patterned substrate is a triangular, conical, columnar or other shape array with a hexagonal close-packed dimension of micrometer, the light extraction efficiency of the light source can be improved to more than 60%, and the extension direction of dislocations in the crystallization process can be controlled by using the patterned substrate, so that the dislocation density can be effectively reduced.
Next, the semicrystalline layer 2 is formed on the substrate 1.
In this embodiment, the material of the semi-crystalline layer 2 is gallium nitride, aluminum nitride or aluminum gallium nitride, and the temperature for forming the semi-crystalline layer 2 is 400 to 700 ℃, the pressure is 300to 700Torr, and the thickness is 10 to 50 nm.
The semi-crystalline layer is in a crystalline state between single crystal and polycrystal, relatively serious lattice mismatch and thermal stress mismatch exist in heteroepitaxy (a substrate material is different from a gallium nitride material), and the lattice mismatch and the thermal stress mismatch between two different materials can be effectively reduced by growing one semi-crystalline layer. In other embodiments, the semi-crystalline layer may be omitted when it is homoepitaxial.
Next, an undoped layer 3 is formed on the semicrystalline layer 2.
In this embodiment, the temperature for forming the undoped layer 3 is 900 to 1200 ℃, the pressure is 100to 500Torr, and the thickness is 0.5 to 5 um.
In this embodiment, the undoped layer 3 may include a 3D undoped layer grown in a three-dimensional mode and a 2D undoped layer grown in a two-dimensional mode, the 3D undoped layer and the 2D undoped layer being sequentially formed on the semicrystalline layer 2, the 3D undoped layer forming an island-shaped structure, and the 2D undoped layer filling up the island-shaped structure to form a flat surface.
Next, an N-type doped layer 4 is formed on the undoped layer 3.
In this embodiment, the N-type doped layer 4 can be formed by substituting trivalent gallium atoms with tetravalent silicon atoms to form electrons, the temperature for forming the N-type doped layer 4 is 900-1200 ℃, the pressure is 100-500 Torr, the thickness is 4.5-9 um, and the doping concentration is 2e18cm-3～6e20cm-3。
In this example, silane was used as a silicon source.
Next, an active layer 5 is formed on the N-type doped layer 4.
In this embodiment, the temperature for forming the active layer 5 is 700 ℃ to 900 ℃, the pressure is 100Torr to 300Torr, and the thickness is 25nm to 320 nm.
In this embodiment, the active layer 5 includes a quantum well layer 51 and a quantum barrier layer 52 that are sequentially and periodically stacked on the N-type doped layer 4, the active layer 5 is composed of 5 to 20 sets of quantum well layers 51 and quantum barrier layers 52 that are periodically stacked, the thickness of the quantum well layer 51 is 2.0nm to 4.0nm, and the thickness of the quantum barrier layer 52 is 3.0nm to 12.0 nm.
In this embodiment, the quantum well layer 51 is formed by doping indium into a gallium nitride layer to form indium gallium nitride, the quantum barrier layer 52 is a gallium nitride layer, indium is difficult to be doped into gallium nitride due to an excessively high temperature, the temperature for forming the quantum well layer 51 is generally lower than the temperature for forming the quantum barrier layer 52, and the temperature difference is about 60 to 160 ℃.
Under the action of external current, electrons generated by the N-type doped layer 4 and holes generated by the P-type doped layer 6 are recombined in the active layer 5 to emit light, so that the active layer structure has an important influence on light emission of a light source.
In this embodiment, after at least one of the quantum well layers 51 is formed, an indium source is introduced, a carbon source is introduced after the indium source is introduced, and a quantum barrier layer 52 is formed after the carbon source is introduced.
The quantum barrier layer is a gallium nitride layer, the gallium nitride is a direct band gap semiconductor material, the forbidden band width at room temperature is 3.39eV, the quantum well layer is an indium gallium nitride layer, the indium gallium nitride layer is formed by introducing an indium source in the gallium nitride forming process, the forbidden band width is gradually reduced along with the increase of the indium content, the depth of a formed potential well is gradually increased, electrons and holes are compositely emitted in the quantum well layer, in the periodically overlapped quantum well layer and quantum barrier layer, the light emitting quantum well layer is mainly concentrated on one side close to a P-type doping layer, mainly because the electron mobility is larger than the hole mobility, the formation of P-type doping is more difficult than the formation of N-type doping, so that the hole concentration is lower than the electron concentration, the indium source is introduced after the quantum well layer is formed, an indium processing layer is formed on the indium gallium nitride surface, a carbon source is introduced on the indium processing layer, the carbon source is decomposed at high, the indium treatment layer is combined with the carbon two-dimensional structure, so that on one hand, the depth of a potential well of the quantum well layer is further increased, the concentration and the mobility of carriers are improved, the internal quantum efficiency is improved, and the light efficiency of a light source is improved.
In this embodiment, the indium source may be trimethyl indium, the flow rate of the introduced indium source is 50 to 500sccm, the carbon source may be one or more of methane, ethane, acetylene, and propane, and the flow rate of the introduced carbon source is 10 to 100 sccm.
In this embodiment, the carbon source may be introduced directly after the indium source is introduced, or may be introduced at a time interval after the indium source is introduced, where the time interval may be 10s to 2 min.
In one embodiment, the flow rate of the indium source is 75sccm, 125sccm, 175sccm, 225sccm, 275sccm, 325sccm, 375sccm, 425sccm or 475sccm, or any value in any interval of 50-100 sccm, 100-150 sccm, 150-200 sccm, 200-250 sccm, 250-300 sccm, 300-350 sccm, 350-400 sccm, 400-450 sccm or 450-500 sccm.
In one embodiment, the carbon source is introduced at a flow rate of 15sccm, 25sccm, 35sccm, 45sccm, 55sccm, 65sccm, 75sccm, 85sccm or 95sccm, or at any value in any interval of 10-20 sccm, 20-30 sccm, 30-40 sccm, 40-50 sccm, 50-60 sccm, 60-70 sccm, 70-80 sccm, 80-90 sccm or 90-100 sccm.
In one embodiment, the carbon source is introduced at intervals of 10s, 20s, 30s, 40s, 50s, 1min10s, 1min20s, 1min30s, 1min40s, 1min50, or 2min after the introduction of the indium source.
In this embodiment, the temperature and pressure of the introduced indium source are kept equal to those of the quantum well layer 51, and the temperature and pressure of the introduced carbon source are kept equal to those of the quantum barrier layer 52.
Referring to fig. 2, in this embodiment, preferably, the aluminum nitride layer 50 is formed after the quantum well layer 51 is formed, before the indium source is applied.
An indium source is introduced into the quantum well layer to form an indium treatment layer, indium in the indium treatment layer can permeate into the indium gallium nitride layer, so that the indium on the surface of the indium treatment layer is unevenly distributed, the flatness is poor, and at the moment, a carbon source is introduced to difficultly obtain a high-quality carbon two-dimensional structure; the forbidden band width of the aluminum nitride is 6.28eV, which is far higher than that of gallium nitride, the aluminum nitride layer has a blocking effect on electrons, the aluminum nitride layer is formed after the quantum well layer is formed and before the indium source is introduced, and the aluminum nitride layer blocks electrons generated in the N-type doping layer from jumping to the active layer, so that the current can be favorably expanded at the contact interface of the N-type doping layer and the active layer, and the high-current injection device is particularly suitable for large-current injection.
In this embodiment, the aluminum nitride layer 50 is obtained by reacting trimethylaluminum with ammonia gas, the temperature for forming the aluminum nitride layer 50 is 700 ℃ to 1500 ℃, the pressure is 100Torr to 300Torr, and the thickness of the aluminum nitride layer 50 is 2 to 12 nm.
In one embodiment, the aluminum nitride layer 50 has a thickness of 2.5nm, 3.5nm, 4.5nm, 5.5nm, 6.5nm, 7.5nm, 8.5nm, 9.5nm, 10.5nm or 11.5nm, or any value within any interval of 2-3 nm, 3-4 nm, 4-5 nm, 5-6 nm, 6-7 nm, 7-8 nm, 8-9 nm, 9-10 nm, 10-11 nm and 11-12 nm.
Referring to fig. 3, as a preferred embodiment, the aluminum nitride layer 50 is formed on one side of the N-type doped layer 4.
Referring to fig. 4, as best preferred in the present embodiment, an aluminum nitride layer 50 is formed on the quantum well layer 51 closest to the N-type doped layer 4.
At the moment, the least electrons jump into the active layer, the optimal current expansion effect is achieved, meanwhile, the active layer can be guaranteed to have sufficient carrier concentration and mobility after sufficient indium treatment and carbon treatment, and the light effect of the light source is the highest.
In this embodiment, preferably, the quantum barrier layer 52 is formed by introducing an indium source after each quantum well layer 51 is formed in the active layer 5, introducing a carbon source after the indium source is introduced, and introducing the carbon source.
Preferably, in this embodiment, the flow rate of the indium source introduced into the active layer 5 after each quantum well layer 51 is formed is gradually increased from the N-type doping layer 4 side to the P-type doping layer 6 side.
In one embodiment, the indium source flow introduced into the next quantum well layer is any one of the values of 10sccm, 20sccm, 30sccm, 40sccm, 50sccm, 100sccm, 200sccm, or 10-200 sccm sequentially added to the indium source flow introduced into the previous quantum well layer.
In this embodiment, it is further preferable that the flow rate of the indium source introduced after each quantum well layer 51 is gradually increased.
In this embodiment, the indium source flow rate is set to an initial value within a range of 50 to 500sccm, and then gradually increased at a certain fixed flow rate within a range of 1 to 20 sccm/min.
In one embodiment, the indium source flow rate is initially 50sccm, and then gradually increased by any one of a constant flow rate of 1sccm/min, 2sccm/min, 3sccm/min, 4sccm/min, 5sccm/min, 6sccm/min, 7sccm/min, 8sccm/min, 9sccm/min, 10sccm/min, 11sccm/min, 12sccm/min, 13sccm/min, 14sccm/min, 15sccm/min, 16sccm/min, 17sccm/min, 18sccm/min, 19sccm/min, or 20 sccm/min.
In another embodiment, the indium source flow rate is started at 100sccm and then gradually increased by any one of a constant flow rate of 1sccm/min, 2sccm/min, 3sccm/min, 4sccm/min, 5sccm/min, 6sccm/min, 7sccm/min, 8sccm/min, 9sccm/min, 10sccm/min, 11sccm/min, 12sccm/min, 13sccm/min, 14sccm/min, 15sccm/min, 16sccm/min, 17sccm/min, 18sccm/min, 19sccm/min, or 20 sccm/min.
In other embodiments, the indium source flow rate is set to any value within a range of 50-500 sccm, and then gradually increased by a fixed flow rate within a range of 1-20 sccm/min.
In this embodiment, it is preferable that the flow rate of the carbon source introduced into the active layer 5 after each quantum well layer 51 is formed is gradually reduced from the N-type doping layer 4 side to the P-type doping layer 6 side.
In one embodiment, the flow rate of the carbon source introduced into the following quantum well layer is decreased by any value within a range of 10sccm, 20sccm, 30sccm, 40sccm, 50sccm or 10-50 sccm in sequence from the flow rate of the carbon source introduced into the preceding quantum well layer.
In this embodiment, it is further preferable that the flow rate of the carbon source introduced after each quantum well layer 51 is gradually decreased.
In this embodiment, the carbon source flow rate is set to an initial value within a range of 10 to 100sccm, and then gradually decreased at a certain fixed flow rate within a range of 1 to 10 sccm/min.
In one embodiment, the carbon source flow is started at 100sccm and then gradually decreased at any constant flow rate of 1sccm/min, 2sccm/min, 3sccm/min, 4sccm/min, 5sccm/min, 6sccm/min, 7sccm/min, 8sccm/min, 9sccm/min or 10 sccm/min.
In another embodiment, the carbon source flow is initiated at 50sccm and then gradually decreased at any constant flow rate of 1sccm/min, 2sccm/min, 3sccm/min, 4sccm/min, 5sccm/min, 6sccm/min, 7sccm/min, 8sccm/min, 9sccm/min or 10 sccm/min.
In other embodiments, the initial value of the carbon source flow is within a range of 10-100 sccm, and then gradually decreases at a constant flow within a range of 1-10 sccm/min.
In this embodiment, it is preferable that the carbon source is introduced and then a silicon source is introduced.
After the carbon source is introduced to form a carbon two-dimensional structure, part of redundant carbon atoms are located on the two-dimensional structure, the silicon source is introduced to generate silicon atoms, the silicon atoms are combined with the redundant carbon atoms to form silicon carbide, the redundant carbon pollution can be effectively prevented, the lattice mismatch of the silicon carbide and the gallium nitride is small, the silicon carbide and the gallium nitride have good integration, the silicon carbide has good conductive and heat-conducting properties, and the heat dissipation is facilitated when the electrical property of an active layer and the light emission are improved.
In this embodiment, the silicon source may be silane, and the flow rate of the introduced silicon source is 2 to 20 sccm.
In one embodiment, the silicon source is introduced at a flow rate of 3sccm, 5sccm, 7sccm, 9sccm, 11sccm, 13sccm, 15sccm, 17sccm or 19sccm, or at any value in any interval of 2-4 sccm, 4-6 sccm, 6-8 sccm, 8-10 sccm, 10-12 sccm, 12-14 sccm, 14-16 sccm, 16-18 sccm or 18-20 sccm.
Preferably, in this embodiment, the silicon source is introduced for a time period until the growth of the quantum barrier layer 52 is completed.
As a further preferred embodiment, the flow rate of the silicon source is gradually decreased.
In this embodiment, the silicon source flow rate is set to an initial value within a range of 2 to 20sccm, and then gradually decreased at a certain fixed flow rate within a range of 0.1 to 1 sccm/min.
In one embodiment, the silicon source flow is initiated at 20sccm and then gradually decreased at any constant flow rate of 0.1sccm/min, 0.2sccm/min, 0.3sccm/min, 0.4sccm/min, 0.5sccm/min, 0.6sccm/min, 0.7sccm/min, 0.8sccm/min, 0.9sccm/min, or 1 sccm/min.
In another embodiment, the silicon source flow is initiated at 10sccm and then gradually decreased at any constant flow rate of 0.1sccm/min, 0.2sccm/min, 0.3sccm/min, 0.4sccm/min, 0.5sccm/min, 0.6sccm/min, 0.7sccm/min, 0.8sccm/min, 0.9sccm/min, or 1 sccm/min.
In other embodiments, the initial value of the silicon source flow is any value within the range of 2-20 sccm, and then gradually decreases with a fixed flow within the range of 0.1-1 sccm/min.
Preferably, in this embodiment, the flow rate of the silicon source is gradually decreased to 0.
Finally, a P-type doped layer 6 is formed on the active layer 5.
In this embodiment, the P-type doped layer 6 may be a divalent magnesium atom instead of a trivalent gallium atom to form a hole.
In this embodiment, the P-type doped layer 6 is formedThe temperature of (A) is 800-1200 ℃, the pressure is 100-500 Torr, the thickness is 50-300 nm, and the doping concentration is 5e18cm-3～5e20cm-3。
In this example, a magnesium metallocene was used as a magnesium source.
In this embodiment, a partial region of the surface of the P-type doped layer 6 is etched to reach the N-type doped layer 4 and expose the N-type doped layer 4, a negative electrode is disposed on the N-type doped layer 4, a positive electrode is disposed on the P-type doped layer 6, and the positive electrode and the negative electrode are connected to a power supply to emit light.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (10)
1. The method for improving the luminous efficiency of the outdoor lighting source is characterized by comprising the steps of providing a substrate, forming a semi-crystalline layer on the substrate, forming an undoped layer on the semi-crystalline layer, forming an N-type doped layer on the undoped layer, forming an active layer on the N-type doped layer, and forming a P-type doped layer on the active layer; the active layer comprises periodically overlapped quantum well layers and quantum barrier layers, the quantum well layers are indium gallium nitride layers, the quantum barrier layers are gallium nitride layers, an indium source is introduced after at least one of the quantum well layers is formed, a carbon source is introduced after the indium source is introduced, and the quantum barrier layers are formed after the carbon source is introduced.
2. An outdoor lighting source light effect improving method according to claim 1, wherein after the quantum well layer is formed, an aluminum nitride layer is formed before the indium source is introduced.
3. The method of claim 2, wherein the aluminum nitride layer is formed on the N-doped layer.
4. The method of claim 3, wherein the aluminum nitride layer is formed on the quantum well layer closest to the N-doped layer.
5. The method for improving the luminous efficiency of the outdoor lighting source according to claim 1, wherein an indium source is introduced after each quantum well layer is formed in the active layer, a carbon source is introduced after the indium source is introduced, and a quantum barrier layer is formed after the carbon source is introduced.
6. The method for improving the luminous efficiency of the outdoor lighting source as claimed in claim 5, wherein the flow of the indium source introduced into the active layer from the side of the N-type doping layer to the side of the P-type doping layer after each quantum well layer is formed is gradually increased.
7. The method for improving the luminous efficiency of the outdoor lighting source according to claim 6, wherein the flow of the carbon source introduced into the active layer from the side of the N-type doping layer to the side of the P-type doping layer after each quantum well layer is formed is gradually reduced.
8. The method as claimed in any one of claims 1 to 7, further comprising introducing a silicon source after the carbon source is introduced.
9. The method for improving luminous efficiency of an outdoor lighting source as claimed in claim 8, wherein the time of introducing the silicon source is continued until the growth of the quantum barrier layer is finished.
10. The method of claim 9 wherein the flow of the silicon source is gradually decreased.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1802757A (en) * | 2003-10-15 | 2006-07-12 | Lg伊诺特有限公司 | Nitride semiconductor light emitting device |
| US20070181906A1 (en) * | 2005-12-28 | 2007-08-09 | George Chik | Carbon passivation in solid-state light emitters |
| US20160141449A1 (en) * | 2014-11-19 | 2016-05-19 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Light emitting diode with doped quantum wells and associated manufacturing method |
| CN108039397A (en) * | 2017-11-27 | 2018-05-15 | 厦门市三安光电科技有限公司 | A kind of nitride semiconductor LED |
| CN109950372A (en) * | 2019-02-15 | 2019-06-28 | 华灿光电(苏州）有限公司 | LED epitaxial slice and its manufacturing method |
-
2020
- 2020-03-07 CN CN202010154489.3A patent/CN111326614B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1802757A (en) * | 2003-10-15 | 2006-07-12 | Lg伊诺特有限公司 | Nitride semiconductor light emitting device |
| US20070181906A1 (en) * | 2005-12-28 | 2007-08-09 | George Chik | Carbon passivation in solid-state light emitters |
| US20160141449A1 (en) * | 2014-11-19 | 2016-05-19 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Light emitting diode with doped quantum wells and associated manufacturing method |
| CN108039397A (en) * | 2017-11-27 | 2018-05-15 | 厦门市三安光电科技有限公司 | A kind of nitride semiconductor LED |
| CN109950372A (en) * | 2019-02-15 | 2019-06-28 | 华灿光电(苏州）有限公司 | LED epitaxial slice and its manufacturing method |
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