CN111785817A - InGaN/(In) GaN quantum well structure and method for improving luminous uniformity of quantum well - Google Patents
InGaN/(In) GaN quantum well structure and method for improving luminous uniformity of quantum well Download PDFInfo
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- CN111785817A CN111785817A CN202010863919.9A CN202010863919A CN111785817A CN 111785817 A CN111785817 A CN 111785817A CN 202010863919 A CN202010863919 A CN 202010863919A CN 111785817 A CN111785817 A CN 111785817A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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Abstract
The invention provides an InGaN quantum well structure and a method for improving the light emitting uniformity of the InGaN quantum well, and belongs to the field of gallium nitride semiconductor device manufacturing and epitaxial growth. The method comprises the following steps of growing an InGaN quantum well on an n-type GaN layer, and then introducing hydrogen to treat the growth of a well layer, wherein the specific treatment process comprises the following steps: and after the GaN cover layer grows, closing the gallium source and the indium source, opening ammonia gas, introducing hydrogen gas, removing indium enriched on the surface of the well layer, then closing the hydrogen gas, keeping the time t for hydrogen removal, and finally opening the gallium source to grow the GaN barrier layer. According to the invention, the hydrogen treatment well layer is adopted to replace the traditional heating annealing treatment well layer, so that the light emitting uniformity of the InGaN quantum well can be obviously improved, and the method is simple and feasible.
Description
Technical Field
The invention belongs to the field of gallium nitride semiconductor device manufacturing and epitaxial growth, and particularly relates to an InGaN/(In) GaN quantum well structure and a method for improving the light-emitting uniformity of a quantum well.
Background
Optoelectronic devices such as GaN-based Light Emitting Diodes (LEDs) and Laser Diodes (LDs) have the advantages of small size, long lifetime, and the like, and have important applications in the fields of illumination, display, communication, storage, and the like. The core of the GaN-based photoelectric device is an InGaN/(In) GaN quantum well active region, and the key for improving the GaN-based photoelectric device is to improve the luminous uniformity of the quantum well. For an InGaN/(In) GaN quantum well, carriers are confined therein for radiative recombination due to localized states formed by indium composition, well thickness fluctuation, etc., and thus the quantum well has strong light emission characteristics even though the defect density is high. However, since GaN has low miscibility with InN and the lattice mismatch between InGaN well layers and (In) GaN barrier layers increases with increasing composition difference, indium concentration (indium rich region), i.e., Pulling effect, easily exists In InGaN, resulting In non-uniform light emission from quantum wells. Therefore, the elimination of the indium-rich region and the regulation and control of the local state are the key to improve the light-emitting uniformity of the quantum well.
Disclosure of Invention
Aiming at the defects In the prior art, the invention provides an InGaN/(In) GaN quantum well structure and a method for improving the luminous uniformity of the quantum well.
The present invention achieves the above-described object by the following technical means.
A method for improving the luminous uniformity of a quantum well comprises the following steps of growing an InGaN quantum well on an n-type GaN layer, introducing hydrogen to treat the growth of a well layer: after the GaN cover layer grows, closing the gallium source and the indium source, opening ammonia gas, introducing hydrogen gas, removing indium enriched on the surface of the well layer, then closing the hydrogen gas, keeping time t for hydrogen removal, and finally opening the gallium source to grow a GaN barrier layer; the time t ranges from 0 to 1000 s.
In the further technical scheme, the flow of the introduced hydrogen is 0-1000 ml/min.
In a further technical scheme, the hydrogen driving time is 0-1000 s.
In a further technical scheme, the temperature of the reaction chamber is 500-1200 ℃ when the hydrogen is introduced.
The technical scheme is further characterized in that the InGaN quantum well growing comprises growing a single quantum well and growing a multi-quantum well.
According to a further technical scheme, when the multiple quantum wells are grown, the time for introducing hydrogen, the hydrogen flow, the hydrogen removing time and the temperature of the reaction chamber can be different.
In a further technical scheme, the gallium source is TMGa or TEGa, and the indium source is TMIn.
An InGaN/(In) GaN quantum well structure comprises the quantum well prepared by the method.
A preparation method of an InGaN/(In) GaN quantum well LED comprises the following steps:
growing a GaN nucleating layer on a substrate;
growing a GaN template layer on the GaN nucleating layer;
step (3), growing an n-type GaN layer on the GaN template layer;
growing an InGaN quantum well on the n-type GaN layer, wherein the InGaN quantum well is the quantum well prepared by the method;
and (5) growing a p-type GaN layer on the InGaN quantum well.
Further, the substrate is a gallium nitride substrate or a silicon substrate or a sapphire substrate.
The invention has the beneficial effects that:
(1) according to the invention, the hydrogen treatment well layer is adopted to replace the traditional heating annealing treatment well layer, the sample dark space of the hydrogen treatment well layer is small In size and small In quantity, the light emitting uniformity of the InGaN/(In) GaN quantum well can be obviously improved, and the method is simple and feasible.
(2) The invention can flexibly regulate and control the flow of the introduced hydrogen, the hydrogen time, the hydrogen removing time and the temperature of the reaction chamber according to different InGaN/(In) GaN quantum wells, removes the indium-rich layer on the surface of the InGaN/(In) GaN quantum well and improves the local state uniformity of the quantum well.
Drawings
FIG. 1 is a schematic diagram of an LED structure including an InGaN single quantum well;
FIG. 2 is a process diagram of a conventional thermal annealing process for epitaxial growth of a well layer;
FIG. 3 is a process diagram of a growing method of treating a well layer with hydrogen gas in the present invention;
FIG. 4 is a graph showing a comparison of photoluminescence effects of a conventional temperature-increasing annealing treatment well layer sample and a hydrogen treatment well layer sample, FIG. 4(a) is a graph showing photoluminescence effects of a conventional temperature-increasing annealing treatment well layer sample, and FIG. 4(b) is a graph showing photoluminescence effects of a hydrogen treatment well layer sample according to the present invention;
in the figure, 101-substrate, 102-GaN nucleation layer, 103-GaN template layer, 104-n type GaN layer, 105-InGaN quantum well, 106-p type GaN layer.
Detailed Description
The invention will be further described with reference to the following figures and specific examples, but the scope of the invention is not limited thereto.
The method is suitable for Light Emitting Diode (LED) and Laser Diode (LD) structures with InGaN/(In) GaN quantum well structures as active regions, and the embodiment takes an InGaN single quantum well LED structure as an example to illustrate the specific implementation scheme of the invention.
As shown in fig. 1, the single quantum well InGaN LED comprises, from bottom to top, a substrate 101, a GaN nucleation layer 102, a GaN template layer 103, an n-type GaN layer 104, an InGaN quantum well 105, and a p-type GaN layer 106.
The preparation method of the LED containing the InGaN single quantum well comprises the following steps:
growing a GaN nucleating layer 102 on a substrate 101, wherein the thickness of the GaN nucleating layer 102 is 20nm, and the substrate 101 is a gallium nitride substrate or a silicon substrate or a sapphire substrate;
step (2), growing a GaN template layer 103 with the thickness of about 1000nm on the GaN nucleating layer 102;
step (3), growing an n-type GaN layer 104 of about 1000nm on the GaN template layer 103;
step (4), growing an InGaN quantum well 105 on the n-type GaN layer 104;
and (5) growing a p-type GaN layer 106 with the thickness of about 150nm on the InGaN quantum well 105.
In the step (4), the InGaN quantum well 105 is grown, and the growth process of the well layer subjected to the temperature-raising annealing treatment in the existing method is as follows: firstly, introducing a gallium source and ammonia gas to grow a GaN barrier layer, opening an indium source to grow an InGaN well layer after a certain time, then closing the indium source to grow a GaN cover layer, then closing the gallium source and the indium source, carrying out heating annealing, and finally opening the gallium source to grow the GaN barrier layer; see fig. 2.
As shown in fig. 3, as an improvement of the prior art, in the present invention, after closing the gallium source and the indium source, hydrogen is introduced to remove indium enriched on the surface of the well layer, then hydrogen is closed, and is kept for a certain time to remove residual hydrogen (i.e., to drive hydrogen), and finally the gallium source is opened to grow the GaN barrier layer, so that the growth of the InGaN quantum well 105 is completed; if multiple quantum wells are grown, after each cover layer grows, the process is circulated; when the multi-quantum well is grown, the time of introducing hydrogen, the hydrogen flow, the hydrogen removing time and the temperature of the reaction chamber can be different. The flow, the time and the hydrogen driving time of the introduced hydrogen and the temperature of the reaction chamber of the metal organic chemical vapor deposition equipment are adjusted along with the specific requirements of the thickness of the well layer, the indium component and the like, the flow, the time and the hydrogen driving time of the introduced hydrogen and the temperature of the reaction chamber are increased along with the increase of the thickness of the well layer and the indium component, and the specific numerical values of the flow, the time, the hydrogen driving time of the introduced hydrogen and the temperature of the reaction chamber are empirical values in the field; when the hydrogen is introduced, the temperature of the reaction chamber and the growth temperature of the well layer can be the same or different; the time of introducing hydrogen is between 0 and 1000 seconds, the flow rate of introducing hydrogen is between 0 and 1000ml/min, the time range of removing hydrogen is between 0 and 1000 seconds, and the temperature range of the reaction chamber is between 500 and 1200 ℃. The gallium source is TMGa or TEGa, and the indium source is TMIn.
As shown in fig. 4(a) and (b), when the photoluminescence results of the conventional temperature-raising annealing treatment well layer sample and the hydrogen treatment well layer sample are compared, the difference of the light emission intensity indicates that the light emission uniformity of the samples is good or bad, and the results show that, compared with the samples of the conventional temperature-raising annealing treatment well layer, the samples of the invention adopting the hydrogen treatment well layer have small dark areas and small quantity, that is, the quantum wells adopting the hydrogen treatment well layer have minimum difference of the light emission intensity and good light emission uniformity.
The present invention is not limited to the above-described embodiments, and any obvious improvements, substitutions or modifications can be made by those skilled in the art without departing from the spirit of the present invention.
Claims (10)
1. A method for improving the luminous uniformity of a quantum well is characterized in that an InGaN quantum well grows on an n-type GaN layer, and hydrogen is introduced to treat the growth of a well layer: after the GaN cover layer grows, closing the gallium source and the indium source, opening ammonia gas, introducing hydrogen gas, removing indium enriched on the surface of the well layer, then closing the hydrogen gas, keeping time t for hydrogen removal, and finally opening the gallium source to grow a GaN barrier layer; the time t ranges from 0 to 1000 s.
2. The method for improving the luminescence uniformity of a quantum well according to claim 1, wherein the flow rate of the introduced hydrogen is 0-1000 ml/min.
3. The method according to claim 1, wherein the hydrogen drive-off time is 0-1000 s.
4. The method as claimed in claim 1, wherein the temperature of the reaction chamber is 500-1200 ℃ when the hydrogen is introduced.
5. The method for improving the uniformity of light emission from a quantum well according to any of claims 1-4, wherein growing InGaN quantum wells comprises growing single quantum wells and growing multiple quantum wells.
6. The method according to claim 5, wherein the time for introducing hydrogen, the flow rate of hydrogen, the time for removing hydrogen, and the temperature of the reaction chamber are different.
7. The method of claim 1, wherein the gallium source is TMGa or TEGa and the indium source is TMIn.
8. An InGaN/(In) GaN quantum well structure comprising a quantum well fabricated by the method of any of claims 1 to 7.
9. A preparation method of an InGaN/(In) GaN quantum well LED is characterized by comprising the following steps:
growing a GaN nucleating layer on a substrate;
growing a GaN template layer on the GaN nucleating layer;
step (3), growing an n-type GaN layer on the GaN template layer;
step (4) growing an InGaN quantum well on the n-type GaN layer, wherein the InGaN quantum well is prepared by the method according to any one of claims 1 to 7;
and (5) growing a p-type GaN layer on the InGaN quantum well.
10. The method of fabricating an InGaN/(In) GaN quantum well LED according to claim 9, wherein the substrate is a gallium nitride substrate or a silicon substrate or a sapphire substrate.
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Cited By (3)
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| CN113284986A (en) * | 2021-03-29 | 2021-08-20 | 华灿光电（浙江）有限公司 | Preparation method of light-emitting diode epitaxial wafer |
| CN113471063A (en) * | 2021-07-01 | 2021-10-01 | 中国科学院半导体研究所 | Preparation method of InGaN single layer |
| CN113644170A (en) * | 2021-08-16 | 2021-11-12 | 聚灿光电科技（宿迁）有限公司 | LED epitaxial structure based on in-situ heat treatment method and growth method thereof |
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