CN210156413U - Ultraviolet light emitting diode epitaxial structure - Google Patents
Ultraviolet light emitting diode epitaxial structure Download PDFInfo
- Publication number
- CN210156413U CN210156413U CN201921032380.1U CN201921032380U CN210156413U CN 210156413 U CN210156413 U CN 210156413U CN 201921032380 U CN201921032380 U CN 201921032380U CN 210156413 U CN210156413 U CN 210156413U
- Authority
- CN
- China
- Prior art keywords
- layer
- aln
- thickness
- algan
- epitaxial structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Led Devices (AREA)
Abstract
The utility model discloses an ultraviolet emitting diode epitaxial structure, including AlN layer, transition layer, N type AlGaN (0.01 < z < 0.99) layer, active layer, barrier layer and the P type AlGaN layer of locating in proper order on the substrate, the transition layer comprises the AlN/AlGaN (0.01 < u < 0.99) superlattice structure of a plurality of cycle. The utility model discloses a form one deck transition layer between AlN layer and N type AlGaN layer to progressively release the stress that lattice mismatch produced at the transition layer, thereby avoid the AlN layer problem of splitting a crack, the quality on AlN layer obtains promoting, dislocation and defect can reduce by a wide margin, thereby promote epitaxial structure's crystal quality, and then improve luminous efficacy.
Description
Technical Field
The utility model relates to a light emitting diode technical field especially relates to an ultraviolet emitting diode epitaxial structure.
Background
The AlGaN semiconductor material has a very wide direct band gap, the forbidden band width is continuously adjustable from 3.4-6.2 eV, and the photoresponse waveband of the AlGaN semiconductor material is enabled to cover from near Ultraviolet (UVA) to deep Ultraviolet (UVC). Compared with the traditional ultraviolet light source such as a mercury lamp and a xenon lamp, the ultraviolet LED has the advantages of no mercury pollution, controllable wavelength, small volume, low power consumption, long service life and the like, and has wide application prospect and great market demand in the fields of high color rendering index white light illumination, anti-counterfeiting identification, ultraviolet polymer curing, sterilization, medical sanitation, water and air purification, high-density optical data storage and the like.
Compared with a mature GaN-based blue light epitaxial structure, the ultraviolet light emitting diode epitaxial structure has generally low luminous efficiency, and the luminous efficiency is sharply reduced along with the reduction of the wavelength. How to prepare an ultraviolet light emitting diode epitaxial structure with good crystallization quality and high luminous power is a problem which is urgently needed to be solved at present.
Disclosure of Invention
The utility model aims to solve the technical problem that an ultraviolet emitting diode epitaxial structure is provided, the crystal is of high quality, and luminous efficiency is high.
In order to solve the technical problem, the utility model provides an ultraviolet light emitting diode epitaxial structure, which comprises an AlN layer, a transition layer, an N-type AlGaN layer, an active layer, a barrier layer and a P-type AlGaN layer which are sequentially arranged on a substrate;
the active layer is composed of quantum well structures with a plurality of periods, and each quantum well structure comprises an AlGaN well layer and an AlGaN barrier layer;
the transition layer is composed of a plurality of periods of AlN/AlGaN superlattice structures, and each period of AlN/AlGaN superlattice structure comprises an AlN layer and a first AlGaN layer.
As an improvement of the scheme, the thickness of the transition layer is 200-400 nm.
As an improvement of the scheme, the thickness of each AlN/AlGaN superlattice structure is 2-10 nm.
In an improvement of the above aspect, the AlN layer has a thickness of 1 to 5nm, and the first AlGaN layer has a thickness of 1 to 5 nm.
As an improvement of the scheme, the active layer is composed of a quantum well structure with 3-5 periods.
As an improvement of the scheme, the thickness of the AlGaN well layer is 3-8 nm, and the thickness of the AlGaN barrier layer is 4-10 nm.
As an improvement of the scheme, the barrier layer is a P-type AlGaN layer, and the thickness of the barrier layer is 30-60 nm.
As an improvement of the scheme, the thickness of the AlN layer is 2-4 mu m.
Implement the utility model discloses, following beneficial effect has:
the utility model provides an ultraviolet light emitting diode epitaxial structure, which comprises an AlN layer, a transition layer, an N-type AlGaN layer, an active layer, a barrier layer and a P-type AlGaN layer which are sequentially arranged on a substrate; the transition layer is composed of a plurality of periods of AlN/AlGaN superlattice structures, and each period of AlN/AlGaN superlattice structure comprises an AlN layer and a first AlGaN layer. The utility model discloses a form one deck transition layer between AlN layer and N type AlGaN layer to progressively release the stress that lattice mismatch produced at the transition layer, thereby avoid the AlN layer problem of splitting a crack, the quality on AlN layer obtains promoting, dislocation and defect can reduce by a wide margin, thereby promote epitaxial structure's crystal quality, and then improve luminous efficacy. In addition, lower dislocation and defect of the epitaxial material mean fewer photon capture centers, more ultraviolet light can pass through the epitaxial structure to emit light outwards, the light emitting efficiency is improved, the total heat generated after the photons are captured is reduced, and the performance of the violet LED device is greatly improved.
The thickness of the AlN/AlGaN superlattice structure in each period is 2-10 nm, and the AlN/AlGaN superlattice structure has the best effect on stress release and dislocation reduction because the thickness of the AlN/AlGaN superlattice structure is the thickness of a plurality of atomic layers.
Drawings
Fig. 1 is a schematic structural diagram of the epitaxial structure of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the present invention will be described in further detail with reference to the accompanying drawings.
Referring to fig. 1, the present invention provides an ultraviolet led epitaxial structure, which includes an AlN layer 20, a transition layer 30, an N-type AlGaN (0.01 < z < 0.99)40, an active layer 50, a barrier layer 60, and a P-type AlGaN layer 70 sequentially disposed on a substrate 10.
The material of the substrate 10 of the present invention may be sapphire, silicon carbide or silicon, or other semiconductor materials. Preferably, the substrate 10 of the present invention is a sapphire substrate.
The utility model discloses AlN layer 20 is made by AlN, as epitaxial structure's substrate material, and its effect is for the preparation is made on follow-up N type AlGaN layer 40, active layer 50 and P type AlGaN layer 70 of growing. Because the energy level of AlN is the largest in a III/V system and the light absorption to the LED is the smallest, the AlN is used as a base material to effectively improve the light extraction efficiency of the epitaxial structure.
Preferably, the AlN layer 20 has a thickness of 2 to 4 μm. If the thickness of the AlN layer 20 is less than 2 mu m, the stress mismatch between the substrate and the AlN material cannot be completely released, and the crystal quality of the AlN material is influenced; if the thickness is too thick, time and material are wasted.
Since the AlN layer 20 and the N-type AlGaN layer 40 have a large lattice difference therebetween, if the N-type AlGaN layer is directly grown on the AlN layer, there is a problem that stress is concentrated at the interface between the two materials to cause cracking. The utility model discloses form one deck transition layer 30 between AlN layer 20 and N type AlGaN layer 40 to the stress that produces the lattice mismatch gradually releases at transition layer 30, thereby avoids the AlN layer problem of splitting a crack, and the quality on AlN layer obtains promoting, and dislocation and defect can reduce by a wide margin, thereby promotes epitaxial structure's crystal quality, and then improves luminous efficacy. In addition, lower dislocation and defect of the epitaxial material mean fewer photon capture centers, more ultraviolet light can pass through the epitaxial structure to emit light outwards, the light emitting efficiency is improved, the total heat generated after the photons are captured is reduced, and the performance of the violet LED device is greatly improved.
Preferably, the thickness of the transition layer is 200-400 nm. If the thickness of the transition layer is less than 200nm, stress is not well released and dislocation is reduced, and if the thickness is too thick, time and materials are wasted.
The AlN/AlGaN superlattice structure can well release stress between an AlN material and N-type AlGaN, and in addition, the AlN/AlGaN superlattice structure can bend dislocation lines, so that the aim of improving the crystal quality is fulfilled. Specifically, the transition layer 30 is composed of several periods of AlN/AlGaN superlattice structures.
Specifically, the AlN/AlGaN superlattice structure for each period includes an AlN layer and a first AlGaN layer. And the Al content of the first AlGaN layer is greater than that of the N-type AlGaN layer. If the content of Al in the first AlGaN layer is less than the content of Al in the N-type AlGaN layer, the transition layer may generate a light absorption effect, which is not favorable for light to be transmitted out of the surface of the epitaxial structure.
The AlN layer is 1-5 nm thick, and the first AlGaN layer is 1-5 nm thick. Preferably, the AlN/AlGaN superlattice structure of each period has a thickness of 2-10 nm, and the AlN/AlGaN superlattice structure has the best effect on stress release and dislocation reduction because the thickness is a thickness of several atomic layers.
In order to improve the light extraction efficiency of the active layer 50, the utility model discloses special design has been made to the structure of active layer. The active layer 50 is composed of a quantum well structure with 3-5 periods, and the quantum well structure comprises AlxGa1-xN well layer and AlyGa1-yAnd N barrier layers, wherein x is more than 0 and less than 0.5, and y is more than 0.2 and less than 1.
It should be noted that too few quantum wells cannot completely limit the electron and hole pairs, which affects brightness; too many quantum well cycles do not increase brightness but time and raw material costs increase due to the limited mobility distance of the holes.
Because the light-emitting wavelength of the epitaxial structure is determined by x in the quantum well structure, the purple light wavelength of the ultraviolet LED chip in the current market is distributed at about 260-365 nm, and the corresponding Al component is 0-50%, namely x is more than 0 and less than 0.5. To better limit the emission of electron-hole pairs in a quantum well structure, y needs to be more than 20% larger than x.
The Al isxGa1-xThe thickness of the N well layer is 3-8 nm, and the Al isyGa1-yThe thickness of the N barrier layer is 4-10 nm. If Al is presentyGa1-yThe thickness of the N barrier layer is too thin to be beneficial to binding electron-hole pairs, and too thick to be beneficial to hole migration.
The N-type AlGaN (0.01 < z < 0.99) layer 40 of the present invention is used to provide electrons, and the P-type AlGaN layer 70 is used to provide holes. In order to improve the light extraction efficiency of the epitaxial structure, the thickness of the N-type AlGaN (z is more than 0.01 and less than 0.99) layer is 1-2 mu m, and the doping concentration of Si is 5E18atom/cm3(ii) a The thickness of the P-type AlGaN is 10-40 nm. The Mg doping concentration in the P-type AlGaN layer is 1E 18-2E 22 atom/cm3。
In order to improve the recombination efficiency of the active layer and improve the brightness in more electron beam quantum well structures. The present invention provides a barrier layer 60 between the active layer 50 and the P-type AlGaN layer 70. In order to obtain a good current blocking effect, the blocking layer 60 is P-type AlwGa1-wAnd the content of Al in the barrier layer of the N layer is more than 20% of that of Al in the well layer, namely w is 0.2-0.7.
The utility model discloses an electron blocking layer utilizes this layer of high potential to be built and stops electron to the migration of P type AlGaN layer 70. Preferably, the thickness of the barrier layer is 30-60 nm.
Correspondingly, the utility model also provides a manufacturing method of ultraviolet emitting diode epitaxial structure, its characterized in that includes following step:
firstly, forming an AlN layer on a substrate;
when an AlN layer is formed on a substrate, the present invention requires high temperature processing of the substrate in order to form an epitaxial structure with good crystal quality. Specifically, the substrate is placed into MOCVD equipment and baked for 7-15 minutes at 1000-1200 ℃.
After the substrate is processed, the temperature is adjusted to 1000-1400 ℃, the growth pressure is adjusted to 40-60 torr, and an AlN layer with the thickness of 2-4 mu m is formed on the substrate.
Secondly, forming a transition layer on the AlN layer;
after the step (I) is completed, the temperature is adjusted to 1000-1400 ℃, the growth pressure is adjusted to 40-60 torr, and a transition layer with the thickness of 200-400 nm is grown. Specifically, the transition layer comprises a plurality of periods of AlN/AlGaN superlattice structures, wherein the thickness of each AlN/AlGaN superlattice structure is 1-3 nm, the thickness of AlN in the AlN/AlGaN superlattice structures is 0.01-0.1 mu m, and the thickness of AlGaN is 0.01-0.1 mu m.
Sequentially forming an N-type AlGaN layer, an active layer, a barrier layer and a P-type AlGaN layer on the transition layer;
after the step (II) is finished, adjusting the temperature to 900-1300 ℃, adjusting the growth pressure to 40-60 torr, and forming an N-type AlGaN (z is more than 0.01 and less than 0.99) layer with the thickness of 1-2 mu m on the transition layer;
adjusting the temperature to 900-1200 ℃, adjusting the growth pressure to 80-130 torr, and growing a quantum well structure with 3-5 periods on the N-type AlGaN layer, wherein the quantum well structure comprises AlxGa1-xN well layer and AlyGa1-yN barrier layer, x is more than 0 and less than 0.5, y is more than 0.2 and less than 1, Al in each quantum well structurexGa1-xThe thickness of the N well layer is 4-10 nm, and Al isyGa1-yThe thickness of the N barrier layer is 4-10 nm;
adjusting the temperature to 800-1000 ℃, the growth pressure to 180-250 torr, and forming a layer of P-type Al with the thickness of 10-40 nm on the active layerwGa1-wAn N barrier layer, w is 0.5-0.9, and the doping concentration of Mg is 5E18atom/cm3。
Adjusting the temperature to 900-1300 ℃ and the growth pressure to 80-130torr, forming a P-type AlGaN layer with a thickness of 10-40 nm on the barrier layer, wherein the doping concentration of Mg is 1E 18-2E 22 atom/cm3。
The invention will be further illustrated by the following specific examples
Example 1
A manufacturing method of an ultraviolet light emitting diode epitaxial structure is characterized by comprising the following steps:
putting the substrate into MOCVD equipment, and baking for 10 minutes at 1050 ℃;
after the substrate is processed, adjusting the temperature to 1250 ℃, adjusting the growth pressure to 50torr, and forming an AlN layer with the thickness of 2 mu m on the substrate;
maintaining the temperature at 1250 ℃, the growth pressure at 50torr, and growing a transition layer with the thickness of 400nm, wherein the transition layer comprises 100 periods of AlN/AlGaN superlattice structures, the thickness of AlN in each AlN/AlGaN (u is 0.6) superlattice structure is 2nm, and the thickness of AlGaN is 2 nm;
adjusting the temperature to 1100 deg.C, growing at 50torr, and forming an N-type AlGaN (z ═ 0.1) layer with a thickness of 2 μm on the transition layer, wherein the Si doping concentration is 5E18atom/cm3；
Regulating the temperature to 1050 ℃ and the growth pressure to 100torr, and growing a quantum well structure with 5 periods on the N-type AlGaN layer, wherein the quantum well structure comprises AlxGa1-xN well layer and AlyGa1-yN barrier layer, x is 0.45, y is 0.6, Al in each quantum well structurexGa1-xThickness of N well layer is 3nm, AlyGa1-yThe thickness of the N barrier layer is 9 nm;
adjusting the temperature to 1000 deg.C, growing at 100torr to form a layer of P-type Al with a thickness of 30nm on the active layerwGa1-wN-barrier layer, w ═ 0.7;
the temperature was adjusted to 950 ℃ and the growth pressure was adjusted to 200torr, and a P-type AlGaN layer with a thickness of 20nm was formed on the barrier layer.
Example 2
A manufacturing method of an ultraviolet light emitting diode epitaxial structure is characterized by comprising the following steps:
putting the substrate into MOCVD equipment, and baking for 10 minutes at 1050 ℃;
after the substrate is processed, adjusting the temperature to 1250 ℃, adjusting the growth pressure to 50torr, and forming an AlN layer with the thickness of 2 mu m on the substrate;
maintaining the temperature at 1250 ℃, the growth pressure at 50torr, and growing a transition layer with the thickness of 300nm, wherein the transition layer comprises an AlN/AlGaN superlattice structure with 60 periods, the thickness of AlN in each AlN/AlGaN (u is 0.6) superlattice structure is 3nm, and the thickness of AlGaN is 2 nm;
adjusting the temperature to 1100 deg.C, growing at 50torr, and forming an N-type AlGaN (z ═ 0.1) layer with a thickness of 2 μm on the transition layer, wherein the Si doping concentration is 5E18atom/cm3；
Regulating the temperature to 1050 ℃ and the growth pressure to 100torr, and growing a quantum well structure with 5 periods on the N-type AlGaN layer, wherein the quantum well structure comprises AlxGa1-xN well layer and AlyGa1-yN barrier layer, x is 0.45, y is 0.6, Al in each quantum well structurexGa1-xThickness of N well layer is 3nm, AlyGa1-yThe thickness of the N barrier layer is 9 nm;
adjusting the temperature to 1000 deg.C, growing at 100torr to form a layer of P-type Al with a thickness of 30nm on the active layerwGa1-wN-barrier layer, w ═ 0.7;
the temperature was adjusted to 950 ℃ and the growth pressure was adjusted to 200torr, and a P-type AlGaN layer with a thickness of 20nm was formed on the barrier layer.
Example 3
A manufacturing method of an ultraviolet light emitting diode epitaxial structure is characterized by comprising the following steps:
putting the substrate into MOCVD equipment, and baking for 10 minutes at 1050 ℃;
after the substrate is processed, adjusting the temperature to 1250 ℃, adjusting the growth pressure to 50torr, and forming an AlN layer with the thickness of 2 mu m on the substrate;
maintaining the temperature at 1250 ℃, the growth pressure at 50torr, and growing a transition layer with the thickness of 210nm, wherein the transition layer comprises 30 periods of AlN/AlGaN superlattice structures, the thickness of AlN in each AlN/AlGaN (u is 0.6) superlattice structure is 3nm, and the thickness of AlGaN is 4 nm;
adjusting the temperature to 1100 deg.C, growing at 50torr, and forming an N-type AlGaN (z ═ 0.1) layer with a thickness of 2 μm on the transition layer, wherein the Si doping concentration is 5E18atom/cm3；
Regulating the temperature to 1050 ℃ and the growth pressure to 100torr, and growing a quantum well structure with 5 periods on the N-type AlGaN layer, wherein the quantum well structure comprises AlxGa1-xN well layer and AlyGa1-yN barrier layer, x is 0.45, y is 0.6, Al in each quantum well structurexGa1-xThickness of N well layer is 3nm, AlyGa1-yThe thickness of the N barrier layer is 9 nm;
adjusting the temperature to 1000 deg.C, growing at 100torr to form a layer of P-type Al with a thickness of 30nm on the active layerwGa1-wN-barrier layer, w ═ 0.7;
the temperature was adjusted to 950 ℃ and the growth pressure was adjusted to 200torr, and a P-type AlGaN layer with a thickness of 20nm was formed on the barrier layer.
Comparative example 1
A manufacturing method of an ultraviolet light emitting diode epitaxial structure is characterized by comprising the following steps:
putting the substrate into MOCVD equipment, and baking for 10 minutes at 1050 ℃;
after the substrate is processed, adjusting the temperature to 1250 ℃, adjusting the growth pressure to 50torr, and forming an AlN layer with the thickness of 2 mu m on the substrate;
adjusting the temperature to 1100 deg.C, growing at 50torr, and forming an N-type AlGaN (z ═ 0.1) layer with a thickness of 2 μm on the transition layer, wherein the Si doping concentration is 5E18atom/cm3；
Regulating the temperature to 1050 ℃ and the growth pressure to 100torr, and growing a quantum well structure with 5 periods on the N-type AlGaN layer, wherein the quantum well structure comprises AlxGa1-xN well layer and AlyGa1-yN barrier layers, x is 0.45,y is 0.6, Al in each quantum well structurexGa1-xThickness of N well layer is 3nm, AlyGa1-yThe thickness of the N barrier layer is 9 nm;
adjusting the temperature to 1000 deg.C, growing at 100torr to form a layer of P-type Al with a thickness of 30nm on the active layerwGa1-wN-barrier layer, w ═ 0.7;
the temperature was adjusted to 950 ℃ and the growth pressure was adjusted to 200torr, and a P-type AlGaN layer with a thickness of 20nm was formed on the barrier layer.
Chips with the same size are manufactured by the manufacturing method of the embodiment 1 and the comparative example 1, and are subjected to photoelectric test, and the results are as follows:
| ID | wavelength/nm | voltage/V | Brightness/mW |
| Comparative example 1 | 280.09 | 6.31 | 12.98 |
| Example 1 | 280.13 | 6.30 | 20.24 |
| Example 2 | 280.13 | 6.29 | 20.12 |
| Example 3 | 280.13 | 6.31 | 20.05 |
The above disclosure is only a preferred embodiment of the present invention, and certainly should not be taken as limiting the scope of the invention, which is defined by the claims and their equivalents.
Claims (8)
1. An ultraviolet light emitting diode epitaxial structure is characterized by comprising an AlN layer, a transition layer, an N-type AlGaN layer, an active layer, a barrier layer and a P-type AlGaN layer which are sequentially arranged on a substrate;
the active layer is composed of quantum well structures with a plurality of periods, and each quantum well structure comprises an AlGaN well layer and an AlGaN barrier layer;
the transition layer is composed of a plurality of periods of AlN/AlGaN superlattice structures, and each period of AlN/AlGaN superlattice structure comprises an AlN layer and a first AlGaN layer.
2. The epitaxial structure of uv led of claim 1, wherein the thickness of the transition layer is 200to 400 nm.
3. The epitaxial structure for uv led of claim 2 wherein each of the AlN/AlGaN superlattice structures has a thickness of 2 to 10 nm.
4. The epitaxial structure for the UV LED of claim 3, wherein the AlN layer has a thickness of 1 to 5nm, and the first AlGaN layer has a thickness of 1 to 5 nm.
5. The epitaxial structure of an ultraviolet light emitting diode according to claim 1, wherein the active layer is composed of 3 to 5 periods of quantum well structures.
6. The epitaxial structure of claim 5, wherein the AlGaN well layer has a thickness of 3 to 8nm and the AlGaN barrier layer has a thickness of 4 to 10 nm.
7. The ultraviolet light emitting diode epitaxial structure of claim 1, wherein the blocking layer is a P-type AlGaN layer, and the thickness of the blocking layer is 30to 60 nm.
8. The ultraviolet light emitting diode epitaxial structure of claim 1, wherein the AlN layer has a thickness of 2 to 4 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921032380.1U CN210156413U (en) | 2019-07-03 | 2019-07-03 | Ultraviolet light emitting diode epitaxial structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921032380.1U CN210156413U (en) | 2019-07-03 | 2019-07-03 | Ultraviolet light emitting diode epitaxial structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210156413U true CN210156413U (en) | 2020-03-17 |
Family
ID=69765174
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921032380.1U Active CN210156413U (en) | 2019-07-03 | 2019-07-03 | Ultraviolet light emitting diode epitaxial structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210156413U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110364600A (en) * | 2019-07-03 | 2019-10-22 | 佛山市国星半导体技术有限公司 | A kind of UV LED epitaxial structure and preparation method thereof |
| CN114388670A (en) * | 2021-12-27 | 2022-04-22 | 泉州三安半导体科技有限公司 | Invisible light emitting diode |
-
2019
- 2019-07-03 CN CN201921032380.1U patent/CN210156413U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110364600A (en) * | 2019-07-03 | 2019-10-22 | 佛山市国星半导体技术有限公司 | A kind of UV LED epitaxial structure and preparation method thereof |
| CN114388670A (en) * | 2021-12-27 | 2022-04-22 | 泉州三安半导体科技有限公司 | Invisible light emitting diode |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9048389B2 (en) | Light emitting diode | |
| CN105070805B (en) | Silicon-based nitride ultraviolet LED epitaxial structure and implementation method thereof | |
| CN110364600A (en) | A kind of UV LED epitaxial structure and preparation method thereof | |
| CN106299052B (en) | A kind of GaN epitaxial structure and preparation method for LED | |
| CN109888071B (en) | GaN-based LED epitaxial layer structure and preparation method thereof | |
| CN108831974B (en) | Light emitting diode epitaxial wafer and manufacturing method thereof | |
| CN110364606A (en) | A kind of UV LED epitaxial structure and preparation method thereof | |
| WO2016197650A1 (en) | Dopant-free algan-based ultraviolet light emitting diode and preparation method thereof | |
| CN105977351A (en) | Growing method of ultraviolet LED active area multiple quantum well | |
| CN210156413U (en) | Ultraviolet light emitting diode epitaxial structure | |
| CN110649137A (en) | Ultraviolet light emitting diode epitaxial structure and manufacturing method thereof | |
| CN104157761A (en) | GaN-based light-emitting diode structure improving light extraction rate and preparation method | |
| CN106129196A (en) | A kind of epitaxial wafer for flip LED chips and preparation method thereof | |
| JP2008277714A (en) | METHOD FOR MANUFACTURING GaN-BASED SEMICONDUCTOR LIGHT EMITTING DIODE | |
| CN112382710A (en) | Deep ultraviolet LED with step-type electronic barrier layer structure and preparation method | |
| CN104300058B (en) | A kind of green-yellow light LED of the wide barrier structure containing doping | |
| CN111403568A (en) | Ultraviolet L ED epitaxial structure and preparation method thereof | |
| CN210156417U (en) | Ultraviolet light emitting diode epitaxial structure | |
| CN117410406B (en) | Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode | |
| CN112382708B (en) | Deep ultraviolet LED with component-gradient quantum well structure and preparation method | |
| CN105405947B (en) | Novel light-emitting diode epitaxial wafer and preparation method thereof | |
| CN111261758A (en) | Ultraviolet LED epitaxial structure and preparation method thereof | |
| CN104201266B (en) | GaN-based deep ultraviolet LED active area structure | |
| CN116053370A (en) | Ultraviolet light-emitting diode and preparation method thereof | |
| CN112242464B (en) | Deep ultraviolet LED with hole accumulation structure and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |