CN112382710A - Deep ultraviolet LED with step-type electronic barrier layer structure and preparation method - Google Patents
Deep ultraviolet LED with step-type electronic barrier layer structure and preparation method Download PDFInfo
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Abstract
The invention discloses a deep ultraviolet LED with a stepped electronic barrier layer structure and a preparation method thereof. The stepped electron blocking layer sequentially comprises a first AlGaN blocking layer, a GaN blocking layer and a second AlGaN blocking layer along the direction from the quantum well active layer to the p-type AlGaN hole injection layer, the Al component content percentage of the first AlGaN blocking layer is larger than that of the barrier in the quantum well active layer, and the Al component content percentage of the second AlGaN blocking layer is larger than or equal to that of the first AlGaN blocking layer. According to the invention, by introducing the stepped electron barrier layer structure, the equivalent barrier height of the electron barrier layer is improved, and the electron overflow effect is relieved, so that the luminous efficiency of the deep ultraviolet LED is improved.
Description
Technical Field
The invention relates to the field of semiconductor photoelectricity, in particular to a deep ultraviolet LED with a step-type electronic barrier layer structure and a preparation method thereof.
Background
Group iii nitrides have been used as an outstanding representative of wide bandgap semiconductor materials, and have achieved high-efficiency solid-state light source devices such as blue-green Light Emitting Diodes (LEDs), lasers, and the like, which have achieved great success in applications such as flat panel displays and white light illumination. In the last decade, it has been desired to apply such efficient luminescent materials in the ultraviolet band to meet the increasing demand of ultraviolet light sources. The ultraviolet band can be generally classified into: long-wave ultraviolet (UVA, wavelength 320-400 nm), medium-wave ultraviolet (UVB, wavelength 280-320 nm), short-wave ultraviolet (UVC, wavelength 200-280 nm) and vacuum ultraviolet (VUV, wavelength 10-200 nm). Ultraviolet light, while not perceived by the human eye, is used in a wide variety of applications. The long-wave ultraviolet light source has great application prospect in the fields of medical treatment, ultraviolet curing, ultraviolet photoetching, information storage, plant illumination and the like; the deep ultraviolet light comprises medium-wave ultraviolet light and short-wave ultraviolet light, and has irreplaceable effects in the aspects of sterilization and disinfection, water purification, biochemical detection, non-line-of-sight communication and the like. At present, the traditional ultraviolet light source is mainly a mercury lamp, has the defects of large volume, high power consumption, high voltage, environmental pollution and the like, and is not beneficial to the application of the traditional ultraviolet light source in daily life and special environments. Therefore, it is highly desirable to develop a highly efficient semiconductor ultraviolet light source device to replace the conventional mercury lamp. The existing research shows that AlGaN in III group nitride is the best candidate material for preparing semiconductor ultraviolet light source devices, and the AlGaN-based ultraviolet LED has the advantages of no toxicity, environmental protection, small size, portability, low power consumption, low voltage, easy integration, long service life, adjustable wavelength and the like, is expected to make breakthrough progress and wide application in the coming years, and gradually replaces the traditional ultraviolet mercury lamp.
At present, AlxGa1-xThe forbidden bandwidth of the N material can be continuously adjusted in a range from 3.4eV (GaN) to 6.2eV (AlN) by changing the Al component, and light emission in a spectral range from 365nm to 200nm can be realized. The band edge emission wavelength of GaN is about 360nm, and is usually used as a division mark of the emission band of nitride Ultraviolet light-emitting diodes (hereinafter referred to as UV-LEDs). The active region of UV-LED with emission wavelength greater than 360nm uses GaN/InGaN Quantum Well (QWs) junction similar to blue LEDAnd (5) forming. The research related to the method has been started in the past 90 years, and the method is successfully commercialized, and the External Quantum Efficiency (EQE) is over 40 percent, and reaches the level comparable to that of a blue LED.
For the UV-LED with the light emitting wavelength less than 360nm, the AlGaN quantum well structure is mainly used as the active region, and the electron overflow effect is one of the main reasons for the low efficiency of the AlGaN-based deep ultraviolet LED with high Al composition, specifically, because electrons of the electron injection layer cross the electron blocking layer to the p-type layer, the p-type layer emits light, the internal quantum efficiency is reduced, and thus, the ideal quantum efficiency cannot be obtained. Therefore, a new ultraviolet LED solution is needed to solve the problems in the prior art.
Disclosure of Invention
The invention aims to provide a deep ultraviolet LED with a stepped electron barrier layer structure and a preparation method thereof, which are used for solving the problem of low efficiency of the deep ultraviolet LED caused by an electron overflow effect in the prior art.
In order to solve the above technical problem, a first solution provided by the present invention is: a deep ultraviolet LED with a step-type electronic barrier layer structure comprises a sapphire substrate, an AlN intrinsic layer, an n-type AlGaN electronic injection layer, a quantum well active layer, a step-type electronic barrier layer, a p-type AlGaN hole injection layer and a p-type GaN contact layer which are sequentially arranged in a stacking manner; the stepped electron blocking layer comprises a first AlGaN blocking layer, a GaN blocking layer and a second AlGaN blocking layer which are sequentially arranged in a stacking mode along the arrangement direction from the quantum well active layer to the p-type AlGaN hole injection layer, the Al component content percentage of the first AlGaN blocking layer is larger than that of a potential barrier in the quantum well active layer, and the Al component content percentage of the second AlGaN blocking layer is larger than or equal to that of the first AlGaN blocking layer.
Preferably, the thickness of the first AlGaN barrier layer is 5-20 nm, the thickness of the GaN barrier layer is 1-10 nm, and the thickness of the second AlGaN barrier layer is 5-20 nm.
Preferably, the stepped electron blocking layer is grown by an MOCVD method at 600-1000 ℃.
Preferably, Mg is used as the p-type dopant in the step-type electron blocking layer.
In order to solve the above technical problem, a second solution provided by the present invention is: a method for preparing a deep ultraviolet LED having a stepped electron blocking layer structure as in the first solution, comprising the following steps in sequence: growing an AlN intrinsic layer, growing an n-type AlGaN electron injection layer, growing a quantum well active layer, growing a stepped electron blocking layer, and growing a p-type AlGaN hole injection layer and a p-type GaN contact layer; the step of growing the step-type electron blocking layer specifically comprises the following steps: the method comprises the steps that a first AlGaN barrier layer, a GaN barrier layer and a second AlGaN barrier layer are sequentially grown on a quantum well active layer at the temperature of 600-1000 ℃, a stepped electronic barrier layer is formed, the Al component content percentage of the first AlGaN barrier layer and the Al component content percentage of the second AlGaN barrier layer are 20-80%, and the Al component content percentage of the second AlGaN barrier layer is larger than or equal to that of the first AlGaN barrier layer.
In the step of growing the stepped electron blocking layer, the growth thickness of the first AlGaN blocking layer is 5-20 nm, the growth thickness of the GaN blocking layer is 1-10 nm, the growth thickness of the second AlGaN blocking layer is 5-20 nm, and Mg is used as a p-type dopant in the stepped electron blocking layer; the Al component content percentage of the first AlGaN barrier layer is greater than that of the barrier in the quantum well active layer.
The step of growing the AlN intrinsic layer specifically comprises the following steps: growing a low-temperature buffer layer in the AlN intrinsic layer on the sapphire substrate at the temperature of 400-800 ℃, wherein the thickness of the low-temperature buffer layer is 10-50 nm; and heating to 1200-1400 ℃, and growing an AlN intrinsic layer on the low-temperature buffer layer in the AlN intrinsic layer, wherein the total thickness of the AlN intrinsic layer is 500-4000 nm.
The step of growing the n-type AlGaN electron injection layer specifically comprises the following steps of: and cooling to 800-1200 ℃, and growing an n-type AlGaN electron injection layer on the AlN intrinsic layer, wherein the Al component percentage is 20-90%, and the thickness is 500-4000 nm.
The step of growing the quantum well active layer specifically comprises the following steps: and cooling to 700-1100 ℃, and growing a quantum well active layer on the n-type AlGaN electron injection layer, wherein the quantum well active layer comprises an AlGaN barrier layer and an AlGaN potential well layer, the AlGaN barrier layer is 5-30 nm thick, the Al component content of the AlGaN barrier layer is 20-100%, and the AlGaN potential well layer is 0.1-5 nm thick, and the Al component content of the AlGaN potential well layer is 0.1-80%.
The step of growing the p-type AlGaN hole injection layer and the p-type GaN contact layer specifically comprises the following steps of: growing a p-type AlGaN hole injection layer on the pulse doping electron blocking layer at 700-1100 ℃, wherein the Al component percentage is 0.1-100%, the thickness is 1-50 nm, and Mg is used as a p-type dopant; growing a p-type GaN contact layer on the p-type AlGaN hole injection layer at the temperature of 400-900 ℃, wherein the thickness of the p-type GaN contact layer is 1-20 nm, and Mg is used as a p-type dopant.
The invention has the beneficial effects that: different from the situation of the prior art, the invention provides the deep ultraviolet LED with the stepped electronic barrier layer structure and the preparation method thereof.
Drawings
FIG. 1 is a schematic structural diagram of an embodiment of a deep ultraviolet LED having a stepped electron blocking layer structure according to the present invention;
fig. 2 is a graph comparing the structures of the deep ultraviolet LED sample of comparative example 1 and the deep ultraviolet LED sample of example 1 in the present invention: a is a structure diagram of a deep ultraviolet LED sample of a comparative example 1, and b is a structure diagram of a deep ultraviolet LED sample of an example 1;
fig. 3 is a graph comparing carrier radiative recombination efficiency of the deep ultraviolet LED sample of comparative example 1 and the deep ultraviolet LED sample of example 1 in the present invention: curve a is a deep ultraviolet LED sample carrier radiation recombination efficiency graph of comparative example 1, and curve b is a deep ultraviolet LED sample carrier radiation recombination efficiency graph of example 1;
FIG. 4 is a graph of the light output power of the deep ultraviolet LED sample of comparative example 1 versus the deep ultraviolet LED sample of example 1 in accordance with the present invention: curve a is a graph of the deep ultraviolet LED sample light output power of comparative example 1 and curve b is a graph of the deep ultraviolet LED sample light output power of example 1.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
Referring to fig. 1, fig. 1 is a schematic structural diagram of an embodiment of a deep ultraviolet LED having a stepped electron blocking layer structure according to the present invention. The deep ultraviolet LED with the stepped electron barrier layer structure comprises a sapphire substrate 1, an AlN intrinsic layer 2, an n-type AlGaN electron injection layer 3, a quantum well active layer 4, a stepped electron barrier layer 5, a p-type AlGaN hole injection layer 6 and a p-type GaN contact layer 7 which are sequentially arranged in a laminated manner; the stepped electron blocking layer 5 comprises a first AlGaN blocking layer 51, a GaN blocking layer 52 and a second AlGaN blocking layer 53 which are sequentially stacked and arranged along the arrangement direction from the quantum well active layer 4 to the p-type AlGaN hole injection layer 6, wherein the Al component content percentage of the first AlGaN blocking layer 51 is greater than that of the barrier in the quantum well active layer 4, and the Al component content percentage of the second AlGaN blocking layer 53 is greater than or equal to that of the first AlGaN blocking layer 51; the electron blocking layer is set to be of a structure with the Al component content percentage gradient change, and the GaN blocking layer is inserted between the first AlGaN blocking layer and the second AlGaN blocking layer, so that the equivalent barrier height of the electron blocking layer is improved, the electron overflow effect is relieved, and the luminous efficiency of the deep ultraviolet LED device is improved.
In the present embodiment, the thickness of the first AlGaN barrier layer 51 is preferably 5 to 20nm, the thickness of the GaN barrier layer 52 is preferably 1 to 10nm, and the thickness of the second AlGaN barrier layer 53 is preferably 5 to 20 nm. The preparation process of the deep ultraviolet LED with the stepped electron barrier layer structure adopts an MOCVD method, wherein the stepped electron barrier layer 5 is obtained by growing at 600-1000 ℃, and Mg is used as a p-type dopant. In addition, an n-electrode 8 is disposed on the n-type AlGaN electron injection layer 3 and a p-electrode 9 is disposed on the p-type GaN contact layer 7 by a conventional method, which is not described in detail herein.
For the second solution proposed by the present invention, the method for preparing the deep ultraviolet LED with the stepped electron blocking layer structure comprises the steps of:
(1) an AlN intrinsic layer is grown. In the step, a low-temperature buffer layer in an AlN intrinsic layer grows on a sapphire substrate at the temperature of 400-800 ℃, and the thickness of the low-temperature buffer layer is 10-50 nm; and heating to 1200-1400 ℃, and growing an AlN intrinsic layer on the low-temperature buffer layer in the AlN intrinsic layer, wherein the total thickness of the AlN intrinsic layer is 500-4000 nm.
(2) And growing an n-type AlGaN electron injection layer. In the step, the temperature is reduced to 800-1200 ℃, an n-type AlGaN electron injection layer grows on the AlN intrinsic layer, wherein the Al component percentage is 20-90%, and the thickness is 500-4000 nm.
(3) And growing a quantum well active layer. In the step, the temperature is reduced to 700-1100 ℃, a quantum well active layer is grown on the n-type AlGaN electron injection layer, the quantum well active layer comprises an AlGaN barrier layer and an AlGaN potential well layer, the thickness of the AlGaN barrier layer is 5-30 nm, the Al component content percentage of the AlGaN barrier layer is 20-100%, and the thickness of the AlGaN potential well layer is 0.1-5 nm, and the Al component content percentage of the AlGaN potential well layer is 0.1-80%.
(4) And growing a step-type electron blocking layer. In the step, a first AlGaN barrier layer, a GaN barrier layer and a second AlGaN barrier layer are sequentially grown on a quantum well active layer at the temperature of 600-1000 ℃ to form a stepped electron barrier layer, wherein the Al component content percentage of the first AlGaN barrier layer and the second AlGaN barrier layer is 20-80%, the growth thickness of the first AlGaN barrier layer is preferably 5-20 nm, the growth thickness of the GaN barrier layer is preferably 1-10 nm, the growth thickness of the second AlGaN barrier layer is preferably 5-20 nm, and Mg is used as a p-type dopant in the stepped electron barrier layer.
If the Al component content percentage of the second AlGaN barrier layer is x, the Al component content percentage of the first AlGaN barrier layer is y, and the Al component content percentage of the barrier in the quantum well active layer is z, x is more than or equal to y and z is satisfied, so that the Al component content percentage is in a gradient change trend.
(5) And growing a p-type AlGaN hole injection layer and a p-type GaN contact layer. In the step, a p-type AlGaN hole injection layer grows on a pulse doping electron blocking layer at 700-1100 ℃, the percentage of Al components is 0.1-100%, the thickness is 1-50 nm, and Mg is used as a p-type dopant; growing a p-type GaN contact layer on the p-type AlGaN hole injection layer at the temperature of 400-900 ℃, wherein the thickness of the p-type GaN contact layer is 1-20 nm, and Mg is used as a p-type dopant.
Since the method for manufacturing the deep ultraviolet LED having the stepped electron blocking layer structure in the second solution is used to manufacture the deep ultraviolet LED having the stepped electron blocking layer structure in the first solution, the structure and function of the deep ultraviolet LED having the stepped electron blocking layer structure in the two solutions should be consistent.
The performance and effect of the deep ultraviolet LED with the stepped electron blocking layer structure are characterized by specific embodiments.
Example 1
In this embodiment, the step of preparing the deep ultraviolet LED having the stepped electron blocking layer structure is as follows:
(1) growing a low-temperature buffer layer in the AlN intrinsic layer on the sapphire substrate at the temperature of 800 ℃, wherein the thickness of the low-temperature buffer layer is 10 nm; and raising the temperature to 1200 ℃, and growing an AlN intrinsic layer on the low-temperature buffer layer in the AlN intrinsic layer, wherein the total thickness of the AlN intrinsic layer is 500 nm.
(2) Cooling to 800 ℃, and growing an n-type AlGaN electron injection layer on the AlN intrinsic layer, wherein the n-type AlGaN electron injection layer is n-type Al0.6Ga0.4N, the thickness is 500-4000 nm.
(3) Cooling to 700 ℃, and growing a quantum well active layer on the n-type AlGaN electron injection layer, wherein the quantum well active layer comprises an AlGaN barrier layer and an AlGaN potential well layer, and specifically, the AlGaN barrier layer is Al0.5Ga0.5N, AlGaN potential well layer Al0.4Ga0.6N。
(4) Sequentially growing a first AlGaN barrier layer, a GaN barrier layer and a second AlGaN barrier layer on the quantum well active layer at 960 ℃ to form a stepped electron barrier layer, wherein the first AlGaN barrier layer is specifically Al0.65Ga0.35N with a thickness of 14nm, and the second AlGaN barrier layer is Al0.65Ga0.35N is 14nm in thickness, the V/III ratio of the first AlGaN barrier layer to the second AlGaN barrier layer is 3500 during growth, and the Mg/Ga ratio of the first AlGaN barrier layer to the second AlGaN barrier layer during doping is 1.2; the growth thickness of the GaN barrier layer was 2 nm.
(5) Growing a p-type AlGaN hole injection layer on the pulse doping electron blocking layer at the temperature of 800 ℃, wherein the p-type AlGaN hole injection layer is Mg-doped p-type Al0.5Ga0.5N, the thickness is 30 nm; and growing a p-type GaN contact layer on the p-type AlGaN hole injection layer at 500 ℃ and with the thickness of 10 nm.
Comparative example 1
In this comparative example, based on the preparation procedure of example 1, only the above procedure (4) was changed to: growing an electron barrier layer Al on the quantum well active layer at 960 DEG C0.65Ga0.35N, the thickness is 26 nm; the other steps were kept as in example 1.
The samples in example 1 and comparative example 1 were compared in structure, and a carrier radiation recombination efficiency test and a light output power test were performed, and the results are shown in fig. 2 to 3, respectively. Specifically, fig. 2 is a diagram comparing the structures of a deep ultraviolet LED sample of comparative example 1 and a deep ultraviolet LED sample of example 1 in the present invention, wherein a is a structural diagram of the deep ultraviolet LED sample of comparative example 1, and b is a structural diagram of the deep ultraviolet LED sample of example 1, and it can be seen that the difference between example 1 and comparative example 1 is whether a GaN barrier layer is interposed therebetween. Fig. 3 is a comparison graph of carrier radiation recombination efficiencies of a deep ultraviolet LED sample of comparative example 1 and a deep ultraviolet LED sample of example 1 in the present invention, wherein a curve a is a graph of carrier radiation recombination efficiency of the deep ultraviolet LED sample of comparative example 1, and a curve b is a graph of carrier radiation recombination efficiency of the deep ultraviolet LED sample of example 1; fig. 4 is a graph comparing the light output power of the deep ultraviolet LED sample of comparative example 1 and the deep ultraviolet LED sample of example 1 in the present invention, wherein a curve a is a graph of the light output power of the deep ultraviolet LED sample of comparative example 1, and a curve b is a graph of the light output power of the deep ultraviolet LED sample of example 1. As can be seen from fig. 3 and 4, due to the introduction of the GaN blocking layer, compared with the comparative example 1, the light output power of the sample in example 1 is improved by 28.5% compared with the conventional structure in comparative example 1 under the condition of 150mA in fig. 4, and thus it is proved that after the GaN blocking layer is introduced, piezoelectric polarization and spontaneous polarization are generated between the GaN blocking layer and the first AlGaN blocking layer, the equivalent barrier height of the electron blocking layer can be improved, the electron overflow effect is relieved, and the light emitting efficiency of the deep ultraviolet LED device is improved.
Different from the situation of the prior art, the invention provides the deep ultraviolet LED with the stepped electronic barrier layer structure and the preparation method thereof.
The above-mentioned embodiments only express the embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. The deep ultraviolet LED with the stepped electronic barrier layer structure is characterized by comprising a sapphire substrate, an AlN intrinsic layer, an n-type AlGaN electronic injection layer, a quantum well active layer, a stepped electronic barrier layer, a p-type AlGaN hole injection layer and a p-type GaN contact layer which are sequentially arranged in a stacked mode;
the stepped electron blocking layer comprises a first AlGaN blocking layer, a GaN blocking layer and a second AlGaN blocking layer which are sequentially stacked and arranged along the arrangement direction of the quantum well active layer to the p-type AlGaN hole injection layer, wherein the Al component content percentage of the first AlGaN blocking layer is greater than that of the potential barrier in the quantum well active layer, and the Al component content percentage of the second AlGaN blocking layer is greater than or equal to that of the first AlGaN blocking layer.
2. The deep ultraviolet LED with the stepped electron barrier layer structure according to claim 1, wherein the first AlGaN barrier layer has a thickness of 5 to 20nm, the GaN barrier layer has a thickness of 1 to 10nm, and the second AlGaN barrier layer has a thickness of 5 to 20 nm.
3. The deep ultraviolet LED with the stepped electron barrier layer structure according to claim 1, wherein the stepped electron barrier layer is grown by an MOCVD method at 600-1000 ℃.
4. The deep ultraviolet LED having a stepped electron blocking layer structure according to claim 1, wherein Mg is used as a p-type dopant in the stepped electron blocking layer.
5. A preparation method of the deep ultraviolet LED with the stepped electron barrier layer structure according to any one of claims 1 to 4, wherein the steps sequentially comprise: growing an AlN intrinsic layer, growing an n-type AlGaN electron injection layer, growing a quantum well active layer, growing a stepped electron blocking layer, and growing a p-type AlGaN hole injection layer and a p-type GaN contact layer;
the step of growing the step-type electron blocking layer specifically comprises the following steps: under the condition of 600-1000 ℃, a first AlGaN barrier layer, a GaN barrier layer and a second AlGaN barrier layer are sequentially grown on the quantum well active layer to form a stepped electronic barrier layer, wherein the Al component content percentages of the first AlGaN barrier layer and the second AlGaN barrier layer are 20-80%, and the Al component content percentage of the second AlGaN barrier layer is greater than or equal to that of the first AlGaN barrier layer.
6. The deep ultraviolet LED with the stepped electron barrier layer structure according to claim 5, wherein in the step of growing the stepped electron barrier layer, the growth thickness of the first AlGaN barrier layer is 5-20 nm, the growth thickness of the GaN barrier layer is 1-10 nm, the growth thickness of the second AlGaN barrier layer is 5-20 nm, and Mg is adopted as a p-type dopant in the stepped electron barrier layer;
the Al component content percentage of the first AlGaN barrier layer is greater than that of the barrier in the quantum well active layer.
7. The deep ultraviolet LED having a stepped electron barrier structure according to claim 5, wherein the step of growing the AlN intrinsic layer specifically comprises:
growing a low-temperature buffer layer in the AlN intrinsic layer on the sapphire substrate at the temperature of 400-800 ℃, wherein the thickness of the low-temperature buffer layer is 10-50 nm;
and heating to 1200-1400 ℃, and growing an AlN intrinsic layer on the low-temperature buffer layer in the AlN intrinsic layer, wherein the total thickness of the AlN intrinsic layer is 500-4000 nm.
8. The deep ultraviolet LED with the stepped electron blocking layer structure according to claim 5, wherein the step of growing the n-type AlGaN electron injection layer specifically comprises:
and cooling to 800-1200 ℃, and growing an n-type AlGaN electron injection layer on the AlN intrinsic layer, wherein the Al component percentage is 20-90%, and the thickness is 500-4000 nm.
9. The deep ultraviolet LED having a stepped electron barrier structure according to claim 5, wherein the step of growing the quantum well active layer specifically comprises:
and cooling to 700-1100 ℃, and growing a quantum well active layer on the n-type AlGaN electron injection layer, wherein the quantum well active layer comprises an AlGaN barrier layer and an AlGaN potential well layer, the AlGaN barrier layer is 5-30 nm thick, the Al component content of the AlGaN barrier layer is 20-100%, and the AlGaN potential well layer is 0.1-5 nm thick, and the Al component content of the AlGaN potential well layer is 0.1-80%.
10. The deep ultraviolet LED with a stepped electron blocking layer structure according to claim 5, wherein the step of growing the p-type AlGaN hole injection layer and the p-type GaN contact layer specifically comprises:
growing a p-type AlGaN hole injection layer on the pulse doping electron blocking layer at 700-1100 ℃, wherein the Al component percentage is 0.1-100%, the thickness is 1-50 nm, and Mg is used as a p-type dopant;
and growing a p-type GaN contact layer on the p-type AlGaN hole injection layer at the temperature of 400-900 ℃, wherein the thickness of the p-type GaN contact layer is 1-20 nm, and Mg is used as a p-type dopant.
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| CN114335275A (en) * | 2021-12-29 | 2022-04-12 | 材料科学姑苏实验室 | Ultraviolet light-emitting diode epitaxial wafer, and preparation method and application thereof |
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