CN115036401A - Deep ultraviolet LED with single quantum well structure and preparation method thereof - Google Patents
Deep ultraviolet LED with single quantum well structure and preparation method thereof Download PDFInfo
- Publication number
- CN115036401A CN115036401A CN202210675845.5A CN202210675845A CN115036401A CN 115036401 A CN115036401 A CN 115036401A CN 202210675845 A CN202210675845 A CN 202210675845A CN 115036401 A CN115036401 A CN 115036401A
- Authority
- CN
- China
- Prior art keywords
- layer
- barrier layer
- thickness
- quantum well
- growing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title abstract description 13
- 230000004888 barrier function Effects 0.000 claims abstract description 158
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 44
- 238000002347 injection Methods 0.000 claims abstract description 32
- 239000007924 injection Substances 0.000 claims abstract description 32
- 230000000903 blocking effect Effects 0.000 claims abstract description 25
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 8
- 239000010980 sapphire Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000010410 layer Substances 0.000 claims description 290
- 239000002019 doping agent Substances 0.000 claims description 14
- 239000002356 single layer Substances 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 12
- 238000001816 cooling Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 3
- 230000007480 spreading Effects 0.000 claims description 3
- 238000003892 spreading Methods 0.000 claims description 3
- 230000000052 comparative effect Effects 0.000 description 25
- 239000000243 solution Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 238000013508 migration Methods 0.000 description 5
- 230000005012 migration Effects 0.000 description 5
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a deep ultraviolet LED with a single quantum well structure and a preparation method thereof, wherein the deep ultraviolet LED comprises a sapphire substrate, an AlN intrinsic layer, an n-type AlGaN electron injection layer, a current expansion layer, a modulated quantum well active layer, an electron blocking layer, a p-type AlGaN hole injection layer and a p-type GaN contact layer which are sequentially arranged in a laminated manner; the modulation quantum well active layer comprises a first barrier layer, a non-doped barrier layer, a potential well layer and a second barrier layer which are sequentially stacked along the direction from the current expanding layer to the electron blocking layer, the Al component percentage of the first barrier layer is the same as that of the non-doped barrier layer, and the Al component percentage of the first barrier layer is larger than that of the second barrier layer. According to the invention, the quantum well active layer is modulated, and the specific single quantum well structure is formed by the first barrier layer, the undoped barrier layer, the potential well layer and the second barrier layer, so that the injection efficiency of electrons and holes into the quantum well is improved, and the luminous efficiency of the device is improved.
Description
Technical Field
The invention relates to the field of semiconductor photoelectricity, in particular to a deep ultraviolet LED with a single quantum well structure and a preparation method thereof.
Background
Group iii nitrides have been used as an outstanding representative of wide bandgap semiconductor materials, and have achieved solid-state light source devices such as high-efficiency blue-green Light Emitting Diodes (LEDs) and lasers, which have achieved great success in applications such as flat panel displays and white light illumination. In recent years, it is expected that such a high-efficiency luminescent material is applied to the ultraviolet band to meet the increasing demand of the ultraviolet light source. The ultraviolet band can be generally classified into: long wave ultraviolet (i.e., UVA), medium wave ultraviolet (i.e., UVB), short wave ultraviolet (i.e., UVC), and vacuum ultraviolet (i.e., VUV). Ultraviolet light, while not perceived by the human eye, is used in a wide variety of applications. The long-wave ultraviolet light source has great application prospect in the fields of medical treatment, ultraviolet curing, ultraviolet photoetching, information storage, plant illumination and the like; the deep ultraviolet light comprises medium-wave ultraviolet light and short-wave ultraviolet light, and has irreplaceable effects in the aspects of sterilization and disinfection, water purification, biochemical detection, non-line-of-sight communication and the like.
At present, in the AlGaN-based deep ultraviolet LED, since the electron mobility is several times higher than the hole mobility, the first potential wells close to the n-type electron injection layer in the multi-quantum well active region structure often have low luminous efficiency, thereby limiting the overall luminous efficiency of the AlGaN-based deep ultraviolet LED. Therefore, a new design of the deep ultraviolet LED active region structure is needed to solve the above existing problems.
Disclosure of Invention
The invention aims to provide a deep ultraviolet LED with a single quantum well structure and a preparation method thereof, which are used for solving the problem that the luminous efficiency of a potential well close to an n-type electron injection layer in the multi-quantum well active region structure of the existing deep ultraviolet LED is low, so that the luminous efficiency of the whole device is influenced.
In order to solve the above technical problems, a first solution provided by the present invention is: the deep ultraviolet LED with the single quantum well structure comprises a sapphire substrate, an AlN intrinsic layer, an n-type AlGaN electron injection layer, a current expansion layer, a modulation quantum well active layer, an electron blocking layer, a p-type AlGaN hole injection layer and a p-type GaN contact layer which are sequentially arranged in a stacked manner; the modulation quantum well active layer comprises a first barrier layer, a non-doped barrier layer, a potential well layer and a second barrier layer which are sequentially stacked along the direction from the current expanding layer to the electron blocking layer, the Al component percentage of the first barrier layer is the same as that of the non-doped barrier layer, and the Al component percentage of the first barrier layer is larger than that of the second barrier layer.
Preferably, the first barrier layer is of a single-layer AlGaN doped structure, the undoped barrier layer is of a single-layer AlGaN undoped structure, and the thicknesses of the first barrier layer and the undoped barrier layer satisfy H 1 ≥2*H 2 In which H is 1 Is the thickness of the first barrier layer, H 2 Is the thickness of the undoped barrier layer.
Preferably, the first barrier layer has an Al component percentage of 50 to 90% and a thickness of 1 to 100 nm.
Preferably, the doping concentration of the first barrier layer is 1 x 10 17 ～1ⅹ10 20 cm -3 The dopant is Si.
Preferably, the potential well layer is of a single-layer AlGaN doped structure, the Al component percentage of the potential well layer is 40% -80%, the thickness of the potential well layer is 0.1 nm-10 nm, and the doping concentration of the potential well layer is 1 x 10 12 ～1ⅹ10 17 cm -3 。
Preferably, the second barrier layer is a single-layer AlGaN doped structure with Al content of 40-80%, thickness of 1-100 nm, and doping concentration of 1 x 10 12 ～1ⅹ10 17 cm -3 。
Preferably, the Al component percentage of the first barrier layer and the second barrier layer satisfies the following condition: x is the number of 1 ≥x 2 + 2% where x 1 Is the Al composition percentage, x, of the first barrier layer 2 Is the Al composition percentage of the second barrier layer.
Preferably, the thicknesses of the first barrier layer, the undoped barrier layer and the second barrier layer satisfy: (H) 1 +H 2 ) ≧ 2 b, where b is a thickness of the second barrier layer.
Preferably, the doping concentration of the current spreading layer is 1 x 10 15 ～1ⅹ10 20 cm -3 。
In order to solve the above technical problem, a second solution provided by the present invention is: a manufacturing method of a deep ultraviolet LED having a single quantum well structure, which is used for manufacturing the deep ultraviolet LED having the single quantum well structure in the aforementioned first solution, comprising the steps of: (1) growing a buffer layer in the AlN intrinsic layer on the sapphire substrate at the temperature of 400-800 ℃, wherein the thickness of the buffer layer is 10-50 nm; (2) heating to 1200-1400 ℃, and growing an AlN intrinsic layer on the buffer layer in the AlN intrinsic layer, wherein the total thickness of the AlN intrinsic layer is 500-4000 nm; (3) cooling to 800-1200 ℃, and growing an n-type AlGaN electron injection layer on the AlN intrinsic layer, wherein the Al component percentage is 20-90%, and the thickness is 500-4000 nm; (4) maintaining the temperature of the step (3), and growing a current expansion layer on the n-type AlGaN electron injection layer, wherein the Al component percentage is 20-90%, and the thickness is 10-300 nm; (5) cooling to 700-1100 ℃, and growing a first barrier layer on the current expansion layer, wherein the first barrier layer comprises 50-90% of Al component, 1-100 nm of thickness and Si as a dopant; (6) maintaining the temperature of the step (5), stopping Si doping, and growing an undoped barrier layer on the first barrier layer; (7) maintaining the temperature in the step (6), doping again, and growing a potential well layer on the non-doped barrier layer, wherein the Al component percentage is 40-80%, and the thickness is 0.1-10 nm; (8) maintaining the temperature of the step (7), and growing a second barrier layer on the potential well layer, wherein the Al component percentage of the second barrier layer is 40-80%, and the thickness of the second barrier layer is 1 nm-100 nm; (9) growing an electron blocking layer on the second barrier layer at 700-1100 ℃, wherein the electron blocking layer is of a single-layer AlGaN structure or a superlattice AlGaN periodic structure, the thickness of the electron blocking layer is 0.1-200 nm, and the percentage of Al component is 50-100%; (10) growing a p-type AlGaN hole injection layer on the electron blocking layer at 700-1100 ℃, wherein the Al component percentage is 10-100%, the thickness is 1-50 nm, and Mg is used as a p-type dopant; (11) growing a p-type GaN contact layer on the p-type AlGaN hole injection layer at the temperature of 400-900 ℃, wherein the thickness of the p-type GaN contact layer is 1-20 nm, and Mg is used as a p-type dopant.
The invention has the beneficial effects that: the invention provides a deep ultraviolet LED with a single quantum well structure and a preparation method thereof, which are different from the prior art, wherein a quantum well active layer is modulated, and a specific single quantum well structure is formed by a first barrier layer, a non-doped barrier layer, a potential well layer and a second barrier layer, so that the injection efficiency of electrons and holes into a quantum well is improved, and the luminous efficiency of a device is improved.
Drawings
FIG. 1 is a schematic diagram of an embodiment of a deep ultraviolet LED with a single quantum well structure according to the present invention;
fig. 2 is a graph comparing the output power of deep ultraviolet LED samples of comparative example and example 1 in accordance with the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
Referring to fig. 1, fig. 1 is a schematic structural diagram of an embodiment of a deep ultraviolet LED with a single quantum well structure according to the present invention. The deep ultraviolet LED with the single quantum well structure comprises a sapphire substrate 1, an AlN intrinsic layer 2, an n-type AlGaN electron injection layer 3, a current expansion layer 4, a modulation quantum well active layer 5, an electron blocking layer 6, a p-type AlGaN hole injection layer 7 and a p-type GaN contact layer 8 which are sequentially arranged in a laminated manner. The modulation quantum well active layer 5 includes a first barrier layer 51, an undoped barrier layer 52, a well layer 53, and a second barrier layer 54, which are sequentially stacked in a direction from the current spreading layer 4 to the electron blocking layer 6, the first barrier layer 51 has the same Al composition percentage as the undoped barrier layer 52, and the first barrier layer 51 has an Al composition percentage greater than that of the second barrier layer 54.
Specifically, the first barrier layer is of a single-layer AlGaN doped structure, the non-doped barrier layer is of a single-layer AlGaN non-doped structure, and the thicknesses of the first barrier layer and the non-doped barrier layer satisfy H 1 ≥2*H 2 In which H is 1 Is the thickness of the first barrier layer, H 2 Is the thickness of the undoped barrier layer; the thicknesses of the first barrier layer, the non-doped barrier layer and the second barrier layer satisfy that: (H) 1 +H 2 ) And ≧ 2 × b, wherein b is the thickness of the second barrier layer. The thickness setting mode has the mechanism that the non-doped barrier layer is arranged to play a certain role in blocking electrons transferred to a potential well, but the thickness of the non-doped barrier layer needs to be set appropriately, so that the transfer degrees of the electrons and holes are further adapted in a balanced manner, and the radiation recombination efficiency of an active region is improved; an excessively thick undoped barrier layer can excessively inhibit the migration of electrons to a potential well and is not favorable for the coordination of the migration degree of the electrons and the holes.
Specifically, the Al component percentages of the first barrier layer and the second barrier layer satisfy: x is the number of 1 ≥x 2 + 2% where x 1 Is the Al composition percentage, x, of the first barrier layer 2 The Al component percentage of the second barrier layer is lower than that of the first barrier layer and that of the second barrier layer. The reason for setting the percentage of the Al component of the film layer is that the percentage of the Al component of the second barrier layer is relatively low by setting the percentage of the Al component of the first barrier layer and the percentage of the Al component of the second barrier layer, so that the migration of holes to potential wells can be promoted, the migration degree of electrons and holes can be further balanced and adapted, and the radiative recombination efficiency of the active region can be improved. The doping concentration of the first barrier layer and the doping concentration of the second barrier layer need to be set according to the Al component. It can be seen that the invention substantially promotes the migration degree of electrons and holes to reach a better balance state through the process setting of three layers of thickness, Al component and doping concentration, thereby obtaining a better radiation recombination effect.
In addition, an n electrode 9 is arranged on the n-type AlGaN electron injection layer by a conventional method, and a p electrode 10 is arranged on the p-type GaN contact layer to form a complete epitaxial chip structure, and the specific process is not repeated herein.
For the second solution proposed by the present invention, the preparation method of the deep ultraviolet LED having the single quantum well structure comprises the steps of:
(1) and growing a buffer layer in the AlN intrinsic layer on the sapphire substrate at the temperature of 400-800 ℃, wherein the thickness of the buffer layer is 10-50 nm.
(2) And heating to 1200-1400 ℃, and growing an AlN intrinsic layer on the buffer layer in the AlN intrinsic layer, wherein the total thickness of the AlN intrinsic layer is 500-4000 nm.
(3) And cooling to 800-1200 ℃, and growing an n-type AlGaN electron injection layer on the AlN intrinsic layer, wherein the Al component percentage is 20-90%, and the thickness is 500-4000 nm.
(4) And (4) maintaining the temperature in the step (3), and growing a current expansion layer on the n-type AlGaN electron injection layer, wherein the Al component percentage is 20-90%, and the thickness is 10-300 nm.
(5) And cooling to 700-1100 ℃, and growing a first barrier layer on the current expansion layer, wherein the first barrier layer comprises 50-90% of Al component, 1-100 nm of thickness and Si as a dopant.
(6) And (5) maintaining the temperature in the step (5), stopping the doping of the Si, and growing a non-doped barrier layer on the first barrier layer.
(7) And (4) maintaining the temperature in the step (6), doping again, and growing a potential well layer on the non-doped barrier layer, wherein the Al component percentage is 40-80%, and the thickness is 0.1-10 nm.
(8) And (4) maintaining the temperature of the step (7), and growing a second barrier layer on the potential well layer, wherein the second barrier layer comprises 40-80% of Al component and has a thickness of 1-100 nm.
(9) And growing an electron blocking layer on the second barrier layer at 700-1100 ℃, wherein the electron blocking layer is of a single-layer AlGaN structure or a superlattice AlGaN periodic structure, the thickness of the electron blocking layer is 0.1-200 nm, and the percentage of the Al component is 50-100%.
(10) Growing a p-type AlGaN hole injection layer on the electron blocking layer at 700-1100 ℃, wherein the Al component percentage is 10-100%, the thickness is 1-50 nm, and Mg is used as a p-type dopant.
(11) Growing a p-type GaN contact layer on the p-type AlGaN hole injection layer at the temperature of 400-900 ℃, wherein the thickness of the p-type GaN contact layer is 1-20 nm, and Mg is used as a p-type dopant.
Since the method of manufacturing the deep ultraviolet LED having the single quantum well structure in the second solution is used to manufacture the deep ultraviolet LED having the single quantum well structure in the aforementioned first solution, the structure and function of the deep ultraviolet LED having the single quantum well structure in the two solutions should be kept consistent.
The performance and effect of the deep ultraviolet LED with the single quantum well structure are characterized by the following specific embodiments, and are analyzed according to the characterization result.
Example 1
In this embodiment, the steps of preparing the deep ultraviolet LED having the single quantum well structure are as follows:
(1) and growing a buffer layer in the AlN intrinsic layer on the sapphire substrate at the temperature of 600 ℃ and with the thickness of 25 nm.
(2) And raising the temperature to 1200 ℃, and growing an AlN intrinsic layer on the buffer layer in the AlN intrinsic layer, wherein the total thickness of the AlN intrinsic layer is 1000 nm.
(3) And cooling to 1000 ℃, and growing an n-type AlGaN electron injection layer on the AlN intrinsic layer, wherein the Al component percentage is 50%, and the thickness is 1000 nm.
(4) And maintaining the temperature at 1000 ℃, and growing a current expansion layer on the n-type AlGaN electron injection layer, wherein the Al component percentage is 70%, and the thickness is 100 nm.
(5) And cooling to 800 ℃, and growing a first barrier layer on the current expansion layer, wherein the first barrier layer comprises 60 percent of Al component, 20nm of thickness and Si as a dopant.
(6) And maintaining 800 ℃, stopping Si doping, and growing an undoped barrier layer on the first barrier layer, wherein the undoped barrier layer has an Al component percentage of 60% and a thickness of 10 nm.
(7) Maintaining the temperature at 800 ℃, doping again, and growing a potential well layer on the non-doped barrier layer, wherein the percentage of Al component of the grown potential well layer is 45 percent, and the thickness is 1.8 nm.
(8) And maintaining 800 deg.c, and growing the second barrier layer with Al content of 55% and thickness of 15nm on the well layer.
(9) And growing an electron blocking layer on the second barrier layer at 800 ℃, wherein the electron blocking layer is of a single-layer AlGaN structure, the thickness of the electron blocking layer is 10nm, and the percentage of Al component is 40%.
(10) Growing a p-type AlGaN hole injection layer on the electron blocking layer at 800 ℃, wherein the Al component percentage is 40%, the thickness is 20nm, and Mg is used as a p-type dopant.
(11) And growing a p-type GaN contact layer on the p-type AlGaN hole injection layer at the temperature of 600 ℃, wherein the thickness of the p-type GaN contact layer is 10nm, and Mg is used as a p-type dopant. And arranging the n electrode and the p electrode to obtain the deep ultraviolet LED with the single quantum well structure.
Comparative example 1
In this comparative example, the preparation of the undoped barrier layer of the above step (6) was removed based on the preparation step of example 1, and the other steps were kept in accordance with example 1. That is, comparative example 1 employs a conventional arrangement of active regions including only a doped barrier layer and a well layer.
Comparative example 2
In this comparative example, based on the preparation step of example 1, only the thickness of the first barrier layer in the above-described step (5) and the thickness of the undoped barrier layer in the step (6), specifically, the thickness of both the first barrier layer and the undoped barrier layer, were adjusted to 15nm, and the other steps were kept in agreement with example 1.
Comparative example 3
In this comparative example, only the thickness of the second barrier layer in the above step (8) was adjusted to 30nm based on the preparation step of example 1, and the other steps were kept in agreement with example 1.
Comparative example 4
In this comparative example, based on the preparation step of example 1, only the Al composition percentage of the second barrier layer in the above-described step (8) was adjusted to 60%, and the other steps were kept in agreement with example 1.
The results of the optical power tests performed on the above example 1 and comparative examples 1 to 4 are shown in fig. 2, wherein the data represented in fig. 2 show that:
1) comparing example 1 with comparative example 1, comparative example 1 adopts the traditional active region arrangement mode containing doped barrier layer and well layer, but no undoped barrier layer is arranged between the first barrier layer and the well layer, so that the light output power of comparative example 1 is obviously lower than that of example 1 under different current conditions. The fact that the undoped barrier layer is introduced between the first barrier layer and the potential well layer proves that the light extraction power of the device can be improved.
2) Comparative example 2 differs from example 1 in that the relationship of the first barrier layer to the undoped barrier layer in comparative example 2 does not satisfy the aforementioned definition of H 1 ≥2*H 2 That is, the undoped barrier in comparative example 2 is in a relatively too thick state, and when the undoped barrier is too thick, the injection efficiency of electrons into the potential well is affected, so that the light extraction power of the comparative example 2 sample is lower than that of the example 1 sample. Comparative example 3 is different from example 1 in that the thickness relationship among the first barrier layer, the undoped barrier layer, and the second barrier layer in comparative example 3 is not satisfied (H) 1 +H 2 ) And ≧ 2 × b, namely the second barrier layer in comparative example 3 appears to be relatively too thick, and the second barrier layer too thick can hinder the injection efficiency of holes to the potential well, so that the light extraction power of the comparative example 3 sample is lower than that of the example 1 sample. The thickness of the first barrier layer, the non-doped barrier layer and the second barrier layer is proved to meet the specific setting condition, and the good light emitting effect of the device can be obtained.
3) Comparing example 1 with comparative example 4, in comparative example 4, the Al component percentages of the first barrier layer and the second barrier layer are the same, but the Al component percentage of the first barrier layer is larger than that of the second barrier layer, so that the light extraction power of the sample of comparative example 4 is lower than that of the sample of example 1, and it is proved that the better light extraction effect of the device can be obtained only by satisfying the Al component percentage setting relationship in the present invention.
The invention provides a deep ultraviolet LED with a single quantum well structure and a preparation method thereof, which are different from the prior art, wherein a quantum well active layer is modulated, and a specific single quantum well structure is formed by a first barrier layer, a non-doped barrier layer, a potential well layer and a second barrier layer, so that the injection efficiency of electrons and holes into a quantum well is improved, and the luminous efficiency of a device is improved.
The above-mentioned embodiments only express the embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent should be subject to the appended claims.
Claims (10)
1. The deep ultraviolet LED with the single quantum well structure is characterized by comprising a sapphire substrate, an AlN intrinsic layer, an n-type AlGaN electron injection layer, a current expansion layer, a modulation quantum well active layer, an electron blocking layer, a p-type AlGaN hole injection layer and a p-type GaN contact layer which are sequentially arranged in a laminated manner;
the modulation quantum well active layer comprises a first barrier layer, a non-doped barrier layer, a potential well layer and a second barrier layer which are sequentially stacked along the direction from the current expansion layer to the electron blocking layer, the Al component percentages of the first barrier layer and the non-doped barrier layer are the same, and the Al component percentage of the first barrier layer is larger than that of the second barrier layer.
2. The deep ultraviolet LED having a single quantum well structure of claim 1, wherein the first barrier layer is a single layer of AlGaN doped structure, the undoped barrier layer is a single layer of AlGaN undoped structure, and the thickness of the first barrier layer and the undoped barrier layer satisfies H 1 ≥2*H 2 In which H 1 Is the thickness of the first barrier layer, H 2 Is the thickness of the undoped barrier layer.
3. The deep ultraviolet LED having a single quantum well structure as claimed in claim 2, wherein the first barrier layer has an Al composition percentage of 50 to 90% and a thickness of 1 to 100 nm.
4. The deep ultraviolet LED having a single quantum well structure as claimed in claim 2, wherein the first barrier layer has a doping concentration of 1 x 10 17 ～1ⅹ10 20 cm -3 The dopant is Si.
5. The deep ultraviolet LED having a single quantum well structure as claimed in claim 2, wherein the potential well layer is a single-layer AlGaN doping structure having an Al composition percentage of 40% to 80%, a thickness of 0.1nm to 10nm, and a doping concentration of 1 x 10 12 ～1ⅹ10 17 cm -3 。
6. The deep ultraviolet LED having a single quantum well structure as claimed in claim 2, wherein the second barrier layer is a single-layered AlGaN doping structure having an Al composition percentage of 40% to 80%, a thickness of 1nm to 100nm, and a doping concentration of 1 x 10 12 ～1ⅹ10 17 cm -3 。
7. The deep ultraviolet LED having a single quantum well structure of claim 6, wherein the first barrier layer and the second barrier layer have an Al composition percentage that satisfies: x is the number of 1 ≥x 2 + 2% where x 1 Is the Al composition percentage, x, of the first barrier layer 2 Is the Al composition percentage of the second barrier layer.
8. The deep ultraviolet LED having a single quantum well structure of claim 6, wherein the first barrier layer, the undoped barrier layer, and the second barrier layer have thicknesses that satisfy: (H) 1 +H 2 ) And ≧ 2 × b, wherein b is the thickness of the second barrier layer.
9. The deep ultraviolet LED having a single quantum well structure as set forth in claim 2, wherein the doping concentration of the current spreading layer is 1 x 10 15 ～1ⅹ10 20 cm -3 。
10. A method for manufacturing the deep ultraviolet LED having the single quantum well structure according to any one of claims 1 to 9, comprising the steps of:
(1) growing a buffer layer in the AlN intrinsic layer on the sapphire substrate at the temperature of 400-800 ℃, wherein the thickness of the buffer layer is 10-50 nm;
(2) heating to 1200-1400 ℃, and growing an AlN intrinsic layer on the buffer layer in the AlN intrinsic layer, wherein the total thickness of the AlN intrinsic layer is 500-4000 nm;
(3) cooling to 800-1200 ℃, and growing an n-type AlGaN electron injection layer on the AlN intrinsic layer, wherein the Al component percentage is 20-90%, and the thickness is 500-4000 nm;
(4) maintaining the temperature of the step (3), and growing a current expansion layer on the n-type AlGaN electron injection layer, wherein the Al component percentage is 20-90%, and the thickness is 10-300 nm;
(5) cooling to 700-1100 ℃, and growing a first barrier layer on the current expansion layer, wherein the first barrier layer comprises 50-90% of Al component, 1-100 nm of thickness and Si as a dopant;
(6) maintaining the temperature of the step (5), stopping Si doping, and growing an undoped barrier layer on the first barrier layer;
(7) maintaining the temperature of the step (6), doping again, and growing a potential well layer on the non-doped barrier layer, wherein the Al component percentage of the potential well layer is 40-80%, and the thickness of the potential well layer is 0.1-10 nm;
(8) maintaining the temperature of the step (7), and growing a second barrier layer on the potential well layer, wherein the Al component percentage of the second barrier layer is 40-80%, and the thickness of the second barrier layer is 1-100 nm;
(9) growing an electron blocking layer on the second barrier layer at 700-1100 ℃, wherein the electron blocking layer is of a single-layer AlGaN structure or a superlattice AlGaN periodic structure, the thickness of the electron blocking layer is 0.1-200 nm, and the percentage of Al component is 50-100%;
(10) growing a p-type AlGaN hole injection layer on the electron blocking layer at 700-1100 ℃, wherein the Al component percentage is 10-100%, the thickness is 1-50 nm, and Mg is used as a p-type dopant;
(11) and growing a p-type GaN contact layer on the p-type AlGaN hole injection layer at the temperature of 400-900 ℃, wherein the thickness of the p-type GaN contact layer is 1-20 nm, and Mg is used as a p-type dopant.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210675845.5A CN115036401A (en) | 2022-06-15 | 2022-06-15 | Deep ultraviolet LED with single quantum well structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210675845.5A CN115036401A (en) | 2022-06-15 | 2022-06-15 | Deep ultraviolet LED with single quantum well structure and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115036401A true CN115036401A (en) | 2022-09-09 |
Family
ID=83124321
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210675845.5A Pending CN115036401A (en) | 2022-06-15 | 2022-06-15 | Deep ultraviolet LED with single quantum well structure and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115036401A (en) |
-
2022
- 2022-06-15 CN CN202210675845.5A patent/CN115036401A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5363236B2 (en) | III-nitride light-emitting diode structure with quantum well and superlattice | |
| CN108231960B (en) | AlGaN-based semiconductor ultraviolet device capable of improving light efficiency and preparation method thereof | |
| KR100649496B1 (en) | Nitride semiconductor light emitting device and method of manufacturing the same | |
| CN109545916B (en) | Ultraviolet LED epitaxial wafer structure and preparation method thereof | |
| CN115377269A (en) | Deep ultraviolet LED with gradient transparent electrode contact layer and preparation method thereof | |
| CN112382710A (en) | Deep ultraviolet LED with step-type electronic barrier layer structure and preparation method | |
| CN112635626A (en) | Semiconductor epitaxial structure, manufacturing method thereof and LED chip | |
| CN117393671B (en) | Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode | |
| CN111403568A (en) | Ultraviolet L ED epitaxial structure and preparation method thereof | |
| CN112382708B (en) | Deep ultraviolet LED with component-gradient quantum well structure and preparation method | |
| CN113809211A (en) | Deep ultraviolet LED with tunneling structure and preparation method thereof | |
| CN110047980B (en) | Ultraviolet LED epitaxial structure and preparation method thereof | |
| JP2001298215A (en) | Light-emitting element | |
| CN218039254U (en) | Gallium nitride-based epitaxial wafer and gallium nitride-based light emitting diode | |
| CN116053370A (en) | Ultraviolet light-emitting diode and preparation method thereof | |
| CN116387433A (en) | Deep ultraviolet light-emitting diode and epitaxial growth method thereof | |
| CN112242464B (en) | Deep ultraviolet LED with hole accumulation structure and preparation method thereof | |
| CN115966639A (en) | Light emitting diode and preparation method thereof | |
| CN115148872A (en) | Deep ultraviolet LED epitaxial structure and preparation method thereof | |
| CN115036401A (en) | Deep ultraviolet LED with single quantum well structure and preparation method thereof | |
| CN213752740U (en) | Semiconductor epitaxial structure and LED chip | |
| CN113036013A (en) | Deep ultraviolet LED epitaxial structure and growth method thereof | |
| CN115842079B (en) | AlGaN-based ultraviolet LED epitaxial structure, LED and preparation method thereof | |
| CN116995160B (en) | AlGaN-based deep ultraviolet light-emitting diode | |
| CN112802936B (en) | Composite pAlGaN electrode contact layer, deep ultraviolet LED epitaxial wafer and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB03 | Change of inventor or designer information |
Inventor after: Zhang Jun Inventor after: Zhang Yi Inventor after: Yue Jinshun Inventor after: Chen Changqing Inventor before: Zhang Yi Inventor before: Zhang Jun Inventor before: Yue Jinshun |
|
| CB03 | Change of inventor or designer information |