CN103681985A - Light-emitting diode epitaxial wafer and manufacture method thereof - Google Patents
Light-emitting diode epitaxial wafer and manufacture method thereof Download PDFInfo
- Publication number
- CN103681985A CN103681985A CN201310593671.9A CN201310593671A CN103681985A CN 103681985 A CN103681985 A CN 103681985A CN 201310593671 A CN201310593671 A CN 201310593671A CN 103681985 A CN103681985 A CN 103681985A
- Authority
- CN
- China
- Prior art keywords
- layer
- gallium nitride
- quantum
- type gallium
- quantum barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 6
- 230000004888 barrier function Effects 0.000 claims abstract description 249
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 147
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 127
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 230000012010 growth Effects 0.000 claims description 53
- 239000000470 constituent Substances 0.000 claims description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000002347 injection Methods 0.000 abstract description 8
- 239000007924 injection Substances 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 2
- 238000005036 potential barrier Methods 0.000 abstract 2
- 238000004020 luminiscence type Methods 0.000 description 8
- 230000006798 recombination Effects 0.000 description 8
- 238000005215 recombination Methods 0.000 description 8
- 239000011777 magnesium Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000005012 migration Effects 0.000 description 6
- 238000013508 migration Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000013598 vector Substances 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 230000008719 thickening Effects 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- IWBUYGUPYWKAMK-UHFFFAOYSA-N [AlH3].[N] Chemical compound [AlH3].[N] IWBUYGUPYWKAMK-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a light-emitting diode epitaxial wafer and a manufacture method thereof and belongs to the field of semiconductor technology. The epitaxial wafer comprises a substrate, a low-temperature buffer layer grown on the substrate, a non-doped gallium nitride layer, a type-N gallium nitride layer, a multiple-quantum well layer and a type-P gallium nitride layer. At least one quantum barrier from one side of the type-N gallium nitride layer is grown by AlxGa1-xN; 0<x<0.3. At least one quantum barrier layer from one side of the type-P gallium nitride layer is grown by InzGa1-zN; 0<z<0.15. The type-P gallium nitride layer is directly grown on the multiple-quantum well layer. The quantum barrier layers close to the type-N gallium nitride layer are provided with high potential barrier, the quantum barrier layers close to the type-P gallium nitride layer are provided with low potential barrier, electron overflow is reduced, hole injection efficiency is improved, more electrons and holes are composited in the quantum well layer, and internal quantum efficiency of the light-emitting diode is improved accordingly.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly epitaxial wafer of a kind of light-emitting diode and preparation method thereof.
Background technology
GaN(gallium nitride) be the Typical Representative of third generation semiconductor material with wide forbidden band, the characteristics such as its excellent high heat conductance, high temperature resistant, acid and alkali-resistance, high rigidity, are widely used in it and make blue, green, ultraviolet light-emitting diode.GaN based light-emitting diode generally includes epitaxial wafer and is located at the electrode on epitaxial wafer.
Existing a kind of GaN based semiconductor light emitting epitaxial wafer, it comprises substrate and is grown in successively N-type layer, multiple quantum well layer, electronic barrier layer and the P type layer on substrate, wherein, the structure of Multiple Quantum Well is InGaN/GaN, it provides constraints to charge carrier, when forward current passes through, the hole in the electronics in N-type layer and P type layer is limited in quantum well layer luminous.Electronic barrier layer can reduce the overflow phenomena of electronics, thereby improves the injection efficiency of charge carrier, and then the brightness that improves light-emitting diode.
In realizing process of the present invention, inventor finds that prior art at least exists following problem:
Electronic barrier layer, in block electrons overflow, has also stopped in the sub-trap of hole vectors and has injected, and causes the internal quantum efficiency of light-emitting diode still lower, and then causes the raising degree of brightness of light-emitting diode limited.
Summary of the invention
In order to solve the problem of prior art, the embodiment of the present invention provides epitaxial wafer of a kind of light-emitting diode and preparation method thereof.Described technical scheme is as follows:
On the one hand, the embodiment of the present invention provides a kind of epitaxial wafer of light-emitting diode, described epitaxial wafer comprises substrate, is grown in the gallium nitride layer of the low temperature buffer layer on described substrate, non-doping, n type gallium nitride layer, multiple quantum well layer and P type gallium nitride layer, described multiple quantum well layer is superlattice structure, described superlattice structure comprises quantum well layer and the quantum barrier layer of alternating growth, and at least one quantum barrier layer starting from described n type gallium nitride layer one side adopts Al
xga
1-xn growth, 0<x<0.3, at least one quantum barrier layer starting from described P type gallium nitride layer one side adopts In
zga
1-zn growth, 0<z<0.15, described P type gallium nitride layer is grown directly upon on described multiple quantum well layer.
Preferably, at least two quantum barrier layers that start from described n type gallium nitride layer one side adopt Al
xga
1-xn growth, the Al constituent content at least two quantum barrier layers that start from described n type gallium nitride layer one side immobilizes or successively raises or successively reduce.
Preferably, at least two quantum barrier layers that start from described P type gallium nitride layer one side adopt In
zga
1-zn growth, the In constituent content at least two quantum barrier layers that start from described P type gallium nitride layer one side immobilizes or successively raises or successively reduce.
Preferably, the barrier height of the middle quantum barrier layer of described multiple quantum well layer is more than or equal to the barrier height of described at least one quantum barrier layer starting from described P type gallium nitride layer one side, in the middle of described, the barrier height of quantum barrier layer is less than or equal to the barrier height of described at least one quantum barrier layer starting from described n type gallium nitride layer one side, in the middle of described, quantum barrier layer is, the quantum barrier layer except described at least one quantum barrier layer starting from described n type gallium nitride layer one side and described at least one quantum barrier layer starting from described P type gallium nitride layer one side.
Further, described middle quantum barrier layer is Al
xga
1-xn layer, In
zga
1-zn layer or GaN layer.
Preferably, the thickness of each quantum well layer of described multiple quantum well layer is respectively 2-3nm, and the thickness of each quantum barrier layer is respectively 10-20nm.
Further, the thickness of each quantum barrier layer in described multiple quantum well layer equates or is unequal.
Preferably, described quantum well layer is InGaN layer, and described from described quantum barrier layer the constituent content of In be less than the constituent content of In in each quantum well layer.
Alternatively, each quantum barrier layer in described multiple quantum well layer has silicon doping.
On the other hand, the embodiment of the present invention provides a kind of manufacture method of epitaxial wafer of light-emitting diode, and described method comprises:
One substrate is provided;
Gallium nitride layer, n type gallium nitride layer, multiple quantum well layer and P type gallium nitride layer in described Grown low temperature buffer layer, non-doping, described multiple quantum well layer is superlattice structure, described superlattice structure comprises quantum well layer and the quantum barrier layer of alternating growth, and at least one quantum barrier layer starting from described n type gallium nitride layer one side adopts Al
xga
1-xn growth, 0<x<0.3, at least one quantum barrier layer starting from described P type gallium nitride layer one side adopts In
zga
1-zn growth, 0<z<0.15, described P type gallium nitride layer is grown directly upon on described multiple quantum well layer.
The beneficial effect that the technical scheme that the embodiment of the present invention provides is brought is:
By adopting Al near at least one quantum barrier layer in the multiple quantum well layer of n type gallium nitride layer
xga
1-xn grows, and has improved the barrier height of this quantum barrier layer, and electronics is slowed down, and then reduces electronics overflow.To adopt In near at least one quantum barrier layer in the multiple quantum well layer of P type gallium nitride layer
zga
1-zn growth, thus the barrier effect to hole reduced, improved the injection efficiency in hole, finally make more electronics and hole be limited in recombination luminescence in quantum well, thereby improved the internal quantum efficiency of light-emitting diode.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme in the embodiment of the present invention, below the accompanying drawing of required use during embodiment is described is briefly described, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the structural representation of the epitaxial wafer of a kind of light-emitting diode of providing of the embodiment of the present invention one;
Fig. 1 a is a kind of part band structure schematic diagram of multiple quantum well layer in epitaxial wafer shown in Fig. 1;
Fig. 1 b is the part band structure schematic diagram of another kind of multiple quantum well layer in epitaxial wafer shown in Fig. 1;
Fig. 2 is the structural representation of the epitaxial wafer of a kind of light-emitting diode of providing of the embodiment of the present invention two;
Fig. 3 is the flow chart of manufacture method of the epitaxial wafer of a kind of light-emitting diode of providing of the embodiment of the present invention three;
Fig. 3 a is the growth structure schematic diagram of a kind of multiple quantum well layer of providing of embodiment tri-.
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing, embodiment of the present invention is described further in detail.
Embodiment mono-
The embodiment of the present invention provides a kind of epitaxial wafer of light-emitting diode, referring to Fig. 1, this epitaxial wafer comprises substrate 1, is grown in the gallium nitride layer 3 of the low temperature buffer layer 2 on substrate 1, non-doping, n type gallium nitride layer 4, multiple quantum well layer 5 and P type gallium nitride layer 6, multiple quantum well layer 5 is superlattice structure, this superlattice structure comprises that quantum well layer 51 and quantum barrier layer 52(are shown in Fig. 1 a and 1b), quantum well layer 51 and quantum barrier layer 52 alternating growths, wherein, at least one the quantum barrier layer 52a starting from n type gallium nitride layer one side adopts Al
xga
1-xn growth, 0<x<0.3, at least one the quantum barrier layer 52b starting from P type gallium nitride layer one side adopts In
zga
1-zn growth, 0<z<0.15, and P type gallium nitride layer 6 is grown directly upon on multiple quantum well layer 5.
Preferably, the periodicity of multiple quantum well layer is 5-15, but not as limit, can arrange according to actual needs.Quantum barrier layer 52a is preferably two or three, and quantum barrier layer 52b is preferably one or two.
Further, when quantum barrier layer 52a(adopts Al
xga
1-xduring N growth) at least two, the Al constituent content at least two quantum barrier layer 52a can immobilize or successively raises or successively reduce; When quantum barrier layer 52b(adopts In
zga
1-zduring N growth) at least two, the In constituent content at least two quantum barrier layer 52b can immobilize or successively raises or successively reduce.Wherein, content immobilizes along not changing from n type gallium nitride layer 4 to the P direction x of type gallium nitride layer 6 and the value of Z; Content successively raises or successively reduces along successively increasing or successively reduce from n type gallium nitride layer 4 to the P direction x of type gallium nitride layer 6 and the value of Z.
In the present embodiment, quantum barrier layer 52c in the middle of multiple quantum well layer 5 also comprises, the barrier height of middle quantum barrier layer 52c is more than or equal to the barrier height of quantum barrier layer 52b, the barrier height of middle quantum barrier layer 52c is less than or equal to the barrier height of quantum barrier layer 52a, middle quantum barrier layer 52c is, the quantum barrier layer except at least one the quantum barrier layer 52a starting from n type gallium nitride layer one side and at least one the quantum barrier layer 52b starting from P type gallium nitride layer one side.The barrier height of quantum barrier layer 5a is higher, can make electronics slow down, reduce electronics overflow, thereby more electronics is focused in Multiple Quantum Well, the barrier height of quantum barrier layer 52b is lower, can reduce the resistance to hole, be conducive to the injection in hole, finally can make more electronics and hole recombination luminescence in quantum well.
Further, middle quantum barrier layer 52c can be Al
xga
1-xn layer, In
zga
1-zn layer or GaN layer.
Further, quantum well layer 51 is InGaN layer, and in quantum barrier layer 52b, the constituent content of In is less than the constituent content of In in each quantum well layer 51, to guarantee that the energy gap of quantum barrier layer is greater than the energy gap of quantum well layer.Easily know, quantum well layer 51 adopts InGaN growth, but has been not limited to other doping.
As an example of the present embodiment, referring to Fig. 1 a, multiple quantum well layer can comprise three quantum barrier layer 52a, three quantum barrier layer 52b and three quantum barrier layer 52c.In quantum barrier layer 52a, in Al constituent content and quantum barrier layer 52b, In constituent content is all fixing, from Fig. 1 a, can find out, the barrier height of quantum barrier layer 52a is the highest, and three quantum barrier layer 52a all equate therefore barrier height is identical because of Al constituent content; The barrier height of quantum barrier layer 52b is minimum, and three quantum barrier layer 52b all equate therefore barrier height is also identical because of In constituent content; The barrier height of the quantum barrier layer of quantum barrier layer 52c is less than the barrier height of quantum barrier layer 52a, and the barrier height of quantum barrier layer 52c is greater than the barrier height of quantum barrier layer 52b.
As another example of the present embodiment, referring to Fig. 1 b, multiple quantum well layer can comprise three quantum barrier layer 52a, three quantum barrier layer 52c and three quantum barrier layer 52b.In this structure, in quantum barrier layer 52a, Al constituent content successively reduces, In constituent content successively increases in quantum barrier layer 52b, from Fig. 1 b, can find out, the barrier height of quantum barrier layer 52a is the highest, and three quantum barrier layer 52a also reduce gradually because Al constituent content successively reduces event barrier height; The barrier height of quantum barrier layer 52b is minimum, and in three quantum barrier layer 52b, In constituent content successively increases, so barrier height reduces gradually; The barrier height of quantum barrier layer 52c is less than the barrier height of quantum barrier layer 52a, and the barrier height of quantum barrier layer 52c is greater than the barrier height of quantum barrier layer 52b.
Easily know, in the barrier height that meets quantum barrier layer 52c, be greater than or equal to the barrier height of quantum barrier layer 52b, and the barrier height of quantum barrier layer 52c is less than or equal under the prerequisite of barrier height of quantum barrier layer 52a, above-mentionedly can also be that in quantum barrier layer 52a, Al constituent content is fixed, In constituent content successively increases in quantum barrier layer 52b for example; Or in quantum barrier layer 52a, Al constituent content successively reduces, In constituent content is fixed in quantum barrier layer 52b; Or in quantum barrier layer 52a, Al constituent content successively increases, In constituent content successively reduces in quantum barrier layer 52b; Or in quantum barrier layer 52a, Al constituent content is fixed, In constituent content successively reduces in quantum barrier layer 52b; Or in quantum barrier layer 52a, Al constituent content successively increases, In constituent content is fixed in quantum barrier layer 52b.
Wherein, the Al constituent content being preferably in quantum barrier layer 52a successively reduces, and the In constituent content in quantum barrier layer 52b successively increases.In this structure, in quantum barrier layer 52a, Al constituent content is by changeable few, the barrier height that Multiple-quantum is built layer, along reducing gradually to P type gallium nitride layer direction from n type gallium nitride layer, is conducive to make the electronics from the sub-trap layer migration of N gallium nitride type direction vector to slow down, and reduces overflow; In in quantum barrier layer 52b is many by few change, and the barrier height that Multiple-quantum is built layer, along raising gradually to n type gallium nitride layer direction from P type gallium nitride layer, is conducive to reduce hole from the resistance of the sub-trap migration of P type gallium nitride direction vector.
Preferably, the thickness of each quantum well layer of multiple quantum well layer 5 is 2-3nm, and the thickness of each quantum barrier layer is 10-20nm.Because the In of the quantum well layer 51 that adopts InGaN growth to form easily spreads, if quantum barrier layer 52 is thinner, just can not stop well the diffusion of the In of InGaN quantum well layer 51, and may cause the coupling of 51 of InGaN quantum well layers; The thickness of quantum barrier layer 52 is blocked up, and hole is difficult for entering into 51 li of InGaN quantum well layers, and therefore, the thickness of restriction quantum barrier layer 52 can also guarantee that hole easily enters into 51 li of quantum well layers in the In diffusion that stops quantum well layer 51.In addition, the thickness setting of quantum barrier layer 52 also can affect migration and the crystal mass in electronics and hole.For example,, during quantum barrier layer thickening, although can improve crystal mass, but can increase the barrier effect to electronics and hole simultaneously, especially to the stopping of hole, this can make not have enough electronics and hole recombination luminescence in quantum well layer, thereby can reduce the luminous efficiency of light-emitting diode; Otherwise, during quantum barrier layer attenuate, can make again crystal mass bad, cause antistatic energy difference, so the thickness of quantum barrier layer need to be controlled at OK range.
Further, the thickness of each quantum barrier layer in multiple quantum well layer 5 can equate or is unequal.Each quantum barrier layer in multiple quantum well layer 5 can have Si(silicon) doping, the multiple quantum well layer of doping Si is conducive to reduce the resistance of light-emitting diode.
Alternatively, substrate 1 includes but not limited to Sapphire Substrate.
Alternatively, low temperature buffer layer 2 can be the materials such as gallium nitride, aluminium nitride or aluminum gallium nitride.
Alternatively, n type gallium nitride layer 4 above can direct growth multiple quantum well layer 5, also can insert regrowth multiple quantum well layer 5 after other resilient coatings or stress release layer.In the present embodiment, n type gallium nitride layer 4 can be the GaN layer of Si doping, but is not limited to Si doping, and this N-type GaN layer can be also multilayer for individual layer.
Alternatively, P type gallium nitride layer 6 adopts Mg(magnesium) GaN of doping is as growth material, easily knows, and in the present embodiment, P type gallium nitride layer 6 is not limited to Mg doping, and P type gallium nitride layer 6 can be also multilayer for individual layer.
Alternatively, this epitaxial slice structure can also be included in the P type contact layer 7 of growth on P type gallium nitride layer 6.
The beneficial effect that the technical scheme that the embodiment of the present invention provides is brought is:
By adopting Al near at least one quantum barrier layer in the multiple quantum well layer of n type gallium nitride layer
xga
1-xn grows, and has improved the barrier height of this quantum barrier layer, and electronics is slowed down, and then reduces electronics overflow.To adopt In near at least one quantum barrier layer in the multiple quantum well layer of P type gallium nitride layer
zga
1-zn growth, thus the barrier effect to hole reduced, improved the injection efficiency in hole, finally make more electronics and hole be limited in recombination luminescence in quantum well, thereby improved the internal quantum efficiency of light-emitting diode.
Embodiment bis-
The embodiment of the present invention provides a kind of epitaxial wafer of light-emitting diode, and the structure of the epitaxial wafer of the structure of the epitaxial wafer of the present embodiment and embodiment mono-is basic identical, and difference is, quantum barrier layer 52c in the middle of the multiple quantum well layer 5 of this epitaxial wafer does not comprise.
Referring to Fig. 2, this epitaxial wafer comprises gallium nitride layer 3, n type gallium nitride layer 4, multiple quantum well layer 5 and the P type gallium nitride layer 6 of substrate 1, low temperature buffer layer 2, non-doping from the bottom up, multiple quantum well layer 5 is superlattice structure, each cycle comprises quantum well layer 51 and quantum barrier layer 52, quantum well layer 51 and quantum barrier layer 52 alternating growths, wherein, at least one the quantum barrier layer 52a starting from n type gallium nitride layer one side adopts Al
xga
1-xn growth, 0<x<0.3, at least one the quantum barrier layer 52b starting from P type gallium nitride layer one side adopts In
zga
1-zn growth, 0<z<0.15, and P type gallium nitride layer 6 is grown directly upon on multiple quantum well layer 5.
The epitaxial wafer of the present embodiment is except quantum barrier layer 52c in the middle of not comprising, other structure and characteristics is all identical with embodiment mono-, does not repeat them here.
The beneficial effect that the technical scheme that the embodiment of the present invention provides is brought is:
By adopting Al near at least one quantum barrier layer in the multiple quantum well layer of n type gallium nitride layer
xga
1-xn grows, and has improved the barrier height of this quantum barrier layer, and electronics is slowed down, and reduces electronics overflow.To adopt In near at least one quantum barrier layer in the multiple quantum well layer of P type gallium nitride layer
zga
1-zn growth, thus the barrier effect to hole reduced, improved the injection efficiency in hole, finally make more electronics and hole be limited in recombination luminescence in quantum well, thereby improved the internal quantum efficiency of light-emitting diode.
Embodiment tri-
The embodiment of the present invention provides a kind of manufacture method of epitaxial wafer of light-emitting diode, and referring to Fig. 3, method comprises:
Step 301 a: substrate is provided;
Alternatively, in the present embodiment, substrate includes but not limited to Sapphire Substrate.
When realizing, can be by substrate the H at 1300 ℃
2under atmosphere, heat-treat clean surface 10 minutes.
Step 302: the gallium nitride layer of low temperature growth buffer layer, non-doping, n type gallium nitride layer successively on substrate;
Alternatively, in the present embodiment, low temperature buffer layer can be gallium nitride layer, can be also aln layer or gallium aluminium nitrogen layer.Particularly, at 550 ℃ of temperature, in substrate surface growth, take the low temperature buffer layer that GaN is material, its thickness is 20-30nm.
Particularly, the gallium nitride layer of the non-doping of growing can be, temperature is risen to 1100 ℃, and a layer thickness of growing on low temperature buffer layer is the GaN layer of the non-doping of 3 μ m, i.e. high temperature buffer layer.
Alternatively, n type gallium nitride layer above can direct growth multiple quantum well layer, also can insert regrowth multiple quantum well layer after other resilient coatings or stress release layer.In the present embodiment, the GaN layer that n type gallium nitride layer can silicon doping, but be not limited to Si doping, this N-type GaN layer can be also multilayer for individual layer.Particularly, a layer thickness of growing on resilient coating is the GaN of the Si doping of 2 μ m.Easily know, n type gallium nitride layer is not limited to Si doping.
Step 303: the multiple quantum well layer of growing on n type gallium nitride layer, multiple quantum well layer is superlattice structure, this superlattice structure comprises quantum well layer and the quantum barrier layer of alternating growth;
Wherein, at least one quantum barrier layer how starting from n type gallium nitride layer one side adopts Al
xga
1-xn growth, 0<x<0.3, at least one quantum barrier layer starting from P type gallium nitride layer one side adopts In
zga
1-zn growth, 0<z<0.15, and P type gallium nitride layer is grown directly upon on multiple quantum well layer quantum barrier layer topmost.
Preferably, the periodicity of multiple quantum well layer is 5-15, but not as limit, can arrange according to actual needs.The quantum barrier layer starting from n type gallium nitride layer one side is preferably two or three, and the quantum barrier layer starting from P type gallium nitride layer one side is preferably one or two.
Further, when the quantum barrier layer starting from n type gallium nitride layer one side (adopts Al
xga
1-xduring N growth) at least two, the Al constituent content at least two quantum barrier layers can be fixed or successively raises or successively reduce; When the quantum barrier layer starting from P type gallium nitride layer one side (adopts In
zga
1-zduring N growth) at least two, the In constituent content at least two quantum barrier layers can immobilize or successively raises or successively reduce.Wherein, content immobilizes and along the direction x from n type gallium nitride layer to P type gallium nitride layer and the value of Z, does not change; Content successively raises or successively reduces and increase gradually or reduce gradually along the direction x from n type gallium nitride layer to P type gallium nitride layer and the value of Z.
Wherein, the Al constituent content being preferably at least one quantum barrier layer starting from n type gallium nitride layer one side successively reduces, and the In constituent content at least one quantum barrier layer starting from P type gallium nitride layer one side successively increases.In this structure, Al constituent content is by changeable few, and the barrier height that Multiple-quantum is built layer, along reducing gradually to P type gallium nitride layer direction from n type gallium nitride layer, is conducive to make the electronics from the sub-trap layer migration of N gallium nitride type direction vector to slow down, and reduces overflow; In in the quantum barrier layer of the second quantum well layer is many by few change, and the barrier height that Multiple-quantum is built layer, along raising gradually to n type gallium nitride layer direction from P type gallium nitride layer, is conducive to reduce hole from the resistance of the sub-trap migration of P type gallium nitride direction vector.
Further, quantum well layer is InGaN layer, and in quantum barrier layer, the constituent content of In is all less than the constituent content of In in each quantum well layer, to guarantee that the energy gap of quantum barrier layer is greater than the energy gap of quantum well layer.Easily know, quantum well layer adopts InGaN growth, but has been not limited to other doping.
In this enforcement, quantum barrier layer, i.e. quantum barrier layer except at least one quantum barrier layer starting from n type gallium nitride layer one side and at least one quantum barrier layer starting from P type gallium nitride layer one side in the middle of the multiple quantum well layer 5 of this epitaxial wafer also comprises.
In the present embodiment, the barrier height of middle quantum barrier layer is less than or equal to the barrier height of at least one quantum barrier layer starting from n type gallium nitride layer one side, is more than or equal to the barrier height of at least one quantum barrier layer starting from P type gallium nitride layer one side.The barrier height of at least one quantum barrier layer starting from n type gallium nitride layer one side is higher, can make electronics slow down, reduce electronics overflow, thereby more electronics is focused in Multiple Quantum Well, the barrier height of at least one quantum barrier layer starting from P type gallium nitride layer one side is lower, can reduce the resistance to hole, be conducive to the injection in hole, finally can make more electronics and hole recombination luminescence in quantum well.
Further, the growth of middle quantum barrier layer can be GaN layer, In
zga
1-zn layer or Al
xga
1-xn layer.
In other embodiments, the multiple quantum well layer 5 of this epitaxial wafer can not comprise middle quantum barrier layer.
Preferably, the thickness of each quantum well layer of multiple quantum well layer is 2-3nm, and the thickness of each quantum barrier layer is 10-20nm.Because the In of quantum well layer can spread, if quantum barrier layer is thinner, just can not stops well the diffusion of the In of quantum well layer, and may cause the coupling between quantum well layer; The thickness of quantum barrier layer is blocked up, and hole is difficult for entering in quantum well layer, and therefore, the thickness of restriction quantum barrier layer can also guarantee that hole easily enters in quantum well layer in the In diffusion that stops InGaN quantum well layer.In addition, the thickness setting of quantum barrier layer 52 also can affect migration and the crystal mass in electronics and hole.For example,, during quantum barrier layer thickening, although can improve crystal mass, but can increase the barrier effect to electronics and hole simultaneously, especially to the stopping of hole, this can make not have enough electronics and hole recombination luminescence in quantum well layer, thereby can reduce the luminous efficiency of light-emitting diode; Otherwise, during quantum barrier layer attenuate, can make again crystal mass bad, cause antistatic energy difference, so the thickness of quantum barrier layer need to be controlled at OK range.
Further, the thickness of each quantum barrier layer in multiple quantum well layer can equate or is unequal.Each quantum barrier layer in multiple quantum well layer includes but not limited to Si doping.Doping Si is conducive to reduce the resistance of light-emitting diode.
In conjunction with Fig. 3 a, for example, four multiple quantum well layers of first growing on n type gallium nitride layer are four quantum well layers 51 of alternating growth and quantum barrier layer 52a, two multiple quantum well layers of regrowth are two quantum well layers 51 of alternating growth and quantum barrier layer 52c, two multiple quantum well layers of regrowth are two quantum well layers 51 of alternating growth and quantum barrier layer 52b, and then form multiple quantum well layer.Wherein, quantum well layer all adopts InGaN growth, and in each quantum well layer, the component of In is identical.Quantum barrier layer 52a adopts AlGaN growth, and wherein the component of Al is respectively 25%, 20%, and 15% and 10%.Quantum barrier layer 52c adopts GaN growth, and quantum barrier layer 52b adopts InGaN growth, and wherein the component of In is respectively 5% and 10%.The thickness of each quantum well layer is 2.5nm, and the thickness of each quantum barrier layer can be 2-3nm.
It should be noted that, each quantum well layer in this example in multiple quantum well layer and the number of plies of quantum barrier layer are only for the present embodiment is given an example, not as limitation of the present invention.
Step 304: growing P-type gallium nitride layer on last quantum barrier layer of multiple quantum well layer;
Alternatively, P type gallium nitride layer adopts Mg(magnesium) GaN of doping is as growth material, easily knows, and in the present embodiment, P type gallium nitride layer is not limited to Mg doping, also can adopt other doping, and P type gallium nitride layer can be also multilayer for individual layer.Particularly, the GaN of growing P-type magnesium doping on last quantum barrier layer of multiple quantum well layer, its thickness is about 300nm.
In the present embodiment, the method also comprises step 305: growing P-type contact layer on P type gallium nitride layer.
It should be noted that, in specific implementation, the embodiment of the present invention can adopt high-purity H
2or N
2as carrier gas, adopt TMGa, TMAl, TMIn and NH
3as Ga source, Al source, In source and N source, adopt SiH respectively respectively
4and Cp
2mg, as N-type and P type dopant, adopts metal organic chemical vapor deposition equipment or other equipment to complete epitaxial wafer growth.
The beneficial effect that the technical scheme that the embodiment of the present invention provides is brought is:
By adopting Al near at least one quantum barrier layer in the multiple quantum well layer of n type gallium nitride layer
xga
1-xn grows, and has improved the barrier height of this quantum barrier layer, and electronics is slowed down, and reduces electronics overflow.To adopt In near at least one quantum barrier layer in the multiple quantum well layer of P type gallium nitride layer
zga
1-zn growth, thus the barrier effect to hole reduced, improved the injection efficiency in hole, finally make more electronics and hole be limited in recombination luminescence in quantum well, thereby improved the internal quantum efficiency of light-emitting diode.
The foregoing is only preferred embodiment of the present invention, in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. the epitaxial wafer of a light-emitting diode, described epitaxial wafer comprises substrate, is grown in the gallium nitride layer of the low temperature buffer layer on described substrate, non-doping, n type gallium nitride layer, multiple quantum well layer and P type gallium nitride layer, described multiple quantum well layer is superlattice structure, described superlattice structure comprises quantum well layer and the quantum barrier layer of alternating growth, it is characterized in that
At least one quantum barrier layer starting from described n type gallium nitride layer one side adopts Al
xga
1-xn growth, 0<x<0.3, at least one quantum barrier layer starting from described P type gallium nitride layer one side adopts In
zga
1-zn growth, 0<z<0.15, described P type gallium nitride layer is grown directly upon on described multiple quantum well layer.
2. epitaxial wafer according to claim 1, is characterized in that, at least two quantum barrier layers that start from described n type gallium nitride layer one side adopt Al
xga
1-xn growth, the Al constituent content at least two quantum barrier layers that start from described n type gallium nitride layer one side immobilizes or successively raises or successively reduce.
3. epitaxial wafer according to claim 1, is characterized in that, at least two quantum barrier layers that start from described P type gallium nitride layer one side adopt In
zga
1-zn growth, the In constituent content at least two quantum barrier layers that start from described P type gallium nitride layer one side immobilizes or successively raises or successively reduce.
4. epitaxial wafer according to claim 1, it is characterized in that, the barrier height of the middle quantum barrier layer of described multiple quantum well layer is more than or equal to the barrier height of described at least one quantum barrier layer starting from described P type gallium nitride layer one side, in the middle of described, the barrier height of quantum barrier layer is less than or equal to the barrier height of described at least one quantum barrier layer starting from described n type gallium nitride layer one side, in the middle of described, quantum barrier layer is, quantum barrier layer except described at least one quantum barrier layer starting from described n type gallium nitride layer one side and described at least one quantum barrier layer starting from described P type gallium nitride layer one side.
5. epitaxial wafer according to claim 4, is characterized in that, described middle quantum barrier layer is Al
xga
1-xn layer, In
zga
1-zn layer or GaN layer.
6. epitaxial wafer according to claim 1, is characterized in that, the thickness of each quantum well layer of described multiple quantum well layer is respectively 2～3nm, and the thickness of each quantum barrier layer is respectively 10～20nm.
7. epitaxial wafer according to claim 1, is characterized in that, the thickness of each quantum barrier layer in described multiple quantum well layer equates or is unequal.
8. epitaxial wafer according to claim 1, is characterized in that, described quantum well layer is InGaN layer, and in described quantum barrier layer, the constituent content of In is less than the constituent content of In in each quantum well layer.
9. epitaxial slice structure according to claim 1, is characterized in that, each quantum barrier layer in described multiple quantum well layer has silicon doping.
10. a manufacture method for the epitaxial wafer of light-emitting diode, described method comprises:
One substrate is provided;
Gallium nitride layer, n type gallium nitride layer, multiple quantum well layer and P type gallium nitride layer in described Grown low temperature buffer layer, non-doping, described multiple quantum well layer is superlattice structure, described superlattice structure comprises quantum well layer and the quantum barrier layer of alternating growth, it is characterized in that
At least one quantum barrier layer starting from described n type gallium nitride layer one side adopts Al
xga
1-xn growth, 0<x<0.3, at least one quantum barrier layer starting from described P type gallium nitride layer one side adopts In
zga
1-zn growth, 0<z<0.15, described P type gallium nitride layer is grown directly upon on described multiple quantum well layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310593671.9A CN103681985B (en) | 2013-11-21 | 2013-11-21 | Epitaxial wafer of a kind of light emitting diode and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310593671.9A CN103681985B (en) | 2013-11-21 | 2013-11-21 | Epitaxial wafer of a kind of light emitting diode and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103681985A true CN103681985A (en) | 2014-03-26 |
| CN103681985B CN103681985B (en) | 2016-05-25 |
Family
ID=50318893
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310593671.9A Active CN103681985B (en) | 2013-11-21 | 2013-11-21 | Epitaxial wafer of a kind of light emitting diode and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103681985B (en) |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104091870A (en) * | 2014-07-30 | 2014-10-08 | 湘能华磊光电股份有限公司 | LED epitaxial wafer with quantum well barrier layer, growing method and LED structure |
| CN104201262A (en) * | 2014-09-16 | 2014-12-10 | 太原理工大学 | InGaN/AlGaN-GaN based multiple-quantum well structure and preparation method thereof |
| CN104538518A (en) * | 2015-01-12 | 2015-04-22 | 厦门市三安光电科技有限公司 | Nitride LED |
| CN105355725A (en) * | 2014-08-20 | 2016-02-24 | 中国科学院苏州纳米技术与纳米仿生研究所 | Gallium nitride semiconductor light emitting diode provided with incline quantum barrier structure, and producing method thereof |
| CN105405939A (en) * | 2015-12-02 | 2016-03-16 | 华灿光电(苏州）有限公司 | Light-emitting diode and manufacturing method thereof |
| CN105790072A (en) * | 2014-12-18 | 2016-07-20 | 中国科学院苏州纳米技术与纳米仿生研究所 | Semiconductor laser device and preparation method thereof |
| CN106057990A (en) * | 2016-06-28 | 2016-10-26 | 华灿光电(苏州）有限公司 | Method for manufacturing epitaxial wafer of GaN-based light emitting diode |
| CN106129209A (en) * | 2016-08-23 | 2016-11-16 | 扬州中科半导体照明有限公司 | The epitaxial wafer of a kind of high LED luminous efficiency and growing method thereof |
| CN106972085A (en) * | 2017-02-28 | 2017-07-21 | 华灿光电（浙江）有限公司 | A kind of LED epitaxial slice and its manufacture method |
| CN107452843A (en) * | 2017-06-30 | 2017-12-08 | 华灿光电（浙江）有限公司 | A kind of LED epitaxial slice and preparation method thereof |
| CN109659409A (en) * | 2018-12-05 | 2019-04-19 | 湖北深紫科技有限公司 | A kind of LED epitaxial structure and preparation method thereof |
| CN110854246A (en) * | 2019-11-15 | 2020-02-28 | 芜湖德豪润达光电科技有限公司 | Light emitting diode and light emitting diode manufacturing method |
| CN110970533A (en) * | 2019-12-30 | 2020-04-07 | 广东德力光电有限公司 | Purple light epitaxial structure of LED flip chip and preparation method thereof |
| CN111244237A (en) * | 2020-01-15 | 2020-06-05 | 圆融光电科技股份有限公司 | Ultraviolet LED epitaxial structure and growth method thereof |
| CN111244241A (en) * | 2020-01-26 | 2020-06-05 | 孙蕾蕾 | Medical light-emitting diode |
| CN117253948A (en) * | 2023-11-20 | 2023-12-19 | 江西兆驰半导体有限公司 | Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1409875A (en) * | 1999-12-13 | 2003-04-09 | 日亚化学工业株式会社 | Light-emitting device |
| KR20040016125A (en) * | 2002-08-16 | 2004-02-21 | 엘지전자 주식회사 | Nitrides semiconductor laser diode |
| CN1883058A (en) * | 2003-11-19 | 2006-12-20 | 日亚化学工业株式会社 | Semiconductor element and manufacturing method for the same |
| CN102368524A (en) * | 2011-10-18 | 2012-03-07 | 中国科学院上海技术物理研究所 | High-efficient GaN-based semiconductor light emitting diode |
| CN102903807A (en) * | 2012-10-10 | 2013-01-30 | 华灿光电股份有限公司 | Epitaxial wafer of light emitting diode and light emitting diode |
-
2013
- 2013-11-21 CN CN201310593671.9A patent/CN103681985B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1409875A (en) * | 1999-12-13 | 2003-04-09 | 日亚化学工业株式会社 | Light-emitting device |
| KR20040016125A (en) * | 2002-08-16 | 2004-02-21 | 엘지전자 주식회사 | Nitrides semiconductor laser diode |
| CN1883058A (en) * | 2003-11-19 | 2006-12-20 | 日亚化学工业株式会社 | Semiconductor element and manufacturing method for the same |
| CN102368524A (en) * | 2011-10-18 | 2012-03-07 | 中国科学院上海技术物理研究所 | High-efficient GaN-based semiconductor light emitting diode |
| CN102903807A (en) * | 2012-10-10 | 2013-01-30 | 华灿光电股份有限公司 | Epitaxial wafer of light emitting diode and light emitting diode |
Cited By (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104091870B (en) * | 2014-07-30 | 2017-06-09 | 湘能华磊光电股份有限公司 | The growing method of the LED with SQW barrier layer |
| CN104091870A (en) * | 2014-07-30 | 2014-10-08 | 湘能华磊光电股份有限公司 | LED epitaxial wafer with quantum well barrier layer, growing method and LED structure |
| CN105355725A (en) * | 2014-08-20 | 2016-02-24 | 中国科学院苏州纳米技术与纳米仿生研究所 | Gallium nitride semiconductor light emitting diode provided with incline quantum barrier structure, and producing method thereof |
| CN105355725B (en) * | 2014-08-20 | 2017-12-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | With the gallium nitride semiconductor light emitting diode and its preparation method for tilting quantum base structure |
| CN104201262A (en) * | 2014-09-16 | 2014-12-10 | 太原理工大学 | InGaN/AlGaN-GaN based multiple-quantum well structure and preparation method thereof |
| CN104201262B (en) * | 2014-09-16 | 2016-08-31 | 太原理工大学 | A kind of InGaN/AlGaN-GaN based multiquantum-well structure and preparation method thereof |
| CN105790072A (en) * | 2014-12-18 | 2016-07-20 | 中国科学院苏州纳米技术与纳米仿生研究所 | Semiconductor laser device and preparation method thereof |
| CN104538518A (en) * | 2015-01-12 | 2015-04-22 | 厦门市三安光电科技有限公司 | Nitride LED |
| CN104538518B (en) * | 2015-01-12 | 2017-07-14 | 厦门市三安光电科技有限公司 | Iii-nitride light emitting devices |
| CN105405939A (en) * | 2015-12-02 | 2016-03-16 | 华灿光电(苏州）有限公司 | Light-emitting diode and manufacturing method thereof |
| CN105405939B (en) * | 2015-12-02 | 2018-01-12 | 华灿光电(苏州）有限公司 | A kind of light emitting diode and its manufacture method |
| CN106057990A (en) * | 2016-06-28 | 2016-10-26 | 华灿光电(苏州）有限公司 | Method for manufacturing epitaxial wafer of GaN-based light emitting diode |
| CN106057990B (en) * | 2016-06-28 | 2019-02-22 | 华灿光电(苏州）有限公司 | A kind of production method of the epitaxial wafer of GaN base light emitting |
| CN106129209A (en) * | 2016-08-23 | 2016-11-16 | 扬州中科半导体照明有限公司 | The epitaxial wafer of a kind of high LED luminous efficiency and growing method thereof |
| CN106129209B (en) * | 2016-08-23 | 2019-01-22 | 扬州中科半导体照明有限公司 | A kind of epitaxial wafer and its growing method of high LED luminous efficiency |
| CN106972085A (en) * | 2017-02-28 | 2017-07-21 | 华灿光电（浙江）有限公司 | A kind of LED epitaxial slice and its manufacture method |
| CN107452843A (en) * | 2017-06-30 | 2017-12-08 | 华灿光电（浙江）有限公司 | A kind of LED epitaxial slice and preparation method thereof |
| CN107452843B (en) * | 2017-06-30 | 2019-03-01 | 华灿光电（浙江）有限公司 | A kind of LED epitaxial slice and preparation method thereof |
| CN109659409A (en) * | 2018-12-05 | 2019-04-19 | 湖北深紫科技有限公司 | A kind of LED epitaxial structure and preparation method thereof |
| CN110854246A (en) * | 2019-11-15 | 2020-02-28 | 芜湖德豪润达光电科技有限公司 | Light emitting diode and light emitting diode manufacturing method |
| CN110970533A (en) * | 2019-12-30 | 2020-04-07 | 广东德力光电有限公司 | Purple light epitaxial structure of LED flip chip and preparation method thereof |
| CN110970533B (en) * | 2019-12-30 | 2021-10-08 | 广东德力光电有限公司 | Purple light epitaxial structure of LED flip chip and preparation method thereof |
| CN111244237A (en) * | 2020-01-15 | 2020-06-05 | 圆融光电科技股份有限公司 | Ultraviolet LED epitaxial structure and growth method thereof |
| CN111244237B (en) * | 2020-01-15 | 2021-04-30 | 圆融光电科技股份有限公司 | Ultraviolet LED epitaxial structure and growth method thereof |
| CN111244241A (en) * | 2020-01-26 | 2020-06-05 | 孙蕾蕾 | Medical light-emitting diode |
| CN117253948A (en) * | 2023-11-20 | 2023-12-19 | 江西兆驰半导体有限公司 | Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode |
| CN117253948B (en) * | 2023-11-20 | 2024-03-08 | 江西兆驰半导体有限公司 | Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103681985B (en) | 2016-05-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103681985A (en) | Light-emitting diode epitaxial wafer and manufacture method thereof | |
| CN106057988B (en) | A kind of preparation method of the epitaxial wafer of GaN base light emitting | |
| CN106098882B (en) | Light emitting diode epitaxial wafer and preparation method thereof | |
| CN106653970B (en) | A kind of epitaxial wafer and its growing method of light emitting diode | |
| CN106229390B (en) | A kind of growing method of GaN base light emitting chip | |
| JP5279006B2 (en) | Nitride semiconductor light emitting device | |
| CN104659170B (en) | A kind of LED epitaxial slice and preparation method thereof | |
| CN105428482A (en) | LED epitaxial structure and manufacturing method thereof | |
| CN104810442A (en) | Light emitting diode epitaxial wafer and growth method thereof | |
| JP6484551B2 (en) | Light emitting element | |
| CN105206726A (en) | LED structure and growth method thereof | |
| CN103337573A (en) | Epitaxial wafer of semiconductor light emitting diode and manufacturing method of epitaxial wafer | |
| CN103236480A (en) | LED (light emitting diode) epitaxial wafer and manufacture method thereof | |
| CN108447952B (en) | Light emitting diode epitaxial wafer and preparation method thereof | |
| CN114883460A (en) | Light emitting diode epitaxial wafer and preparation method thereof | |
| CN106876531B (en) | A kind of epitaxial wafer of light emitting diode and preparation method thereof | |
| CN109473514A (en) | A kind of gallium nitride based LED epitaxial slice and its manufacturing method | |
| CN106848017B (en) | A kind of epitaxial wafer and its growing method of GaN base light emitting | |
| CN105552178A (en) | Gallium nitride-based light-emitting diode epitaxial wafer and preparation method thereof | |
| CN108550676B (en) | Light emitting diode epitaxial wafer and manufacturing method thereof | |
| CN112366256B (en) | Light emitting diode epitaxial wafer and manufacturing method thereof | |
| CN108987544A (en) | A kind of LED epitaxial slice and its manufacturing method | |
| CN108682721A (en) | A kind of LED epitaxial slice and preparation method thereof | |
| CN109786522B (en) | GaN-based light emitting diode epitaxial wafer and preparation method thereof | |
| CN108461582B (en) | A kind of growing method and LED epitaxial slice of LED epitaxial slice |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |