CN104201262A - InGaN/AlGaN-GaN based multiple-quantum well structure and preparation method thereof - Google Patents
InGaN/AlGaN-GaN based multiple-quantum well structure and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title abstract description 8
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 63
- 230000004888 barrier function Effects 0.000 claims abstract description 11
- 239000012159 carrier gas Substances 0.000 claims description 33
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 30
- 229910052733 gallium Inorganic materials 0.000 claims description 30
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 30
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- 239000004411 aluminium Substances 0.000 claims description 13
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 4
- 230000006798 recombination Effects 0.000 abstract description 9
- 238000005215 recombination Methods 0.000 abstract description 9
- 239000013078 crystal Substances 0.000 abstract description 3
- 238000005452 bending Methods 0.000 abstract description 2
- 238000002347 injection Methods 0.000 abstract description 2
- 239000007924 injection Substances 0.000 abstract description 2
- 239000002800 charge carrier Substances 0.000 description 7
- 239000011777 magnesium Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 230000005428 wave function Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention relates to an InGaN/AlGaN-GaN based multiple-quantum well structure and a preparation method thereof. In the preparation method, InGaN for fixing the In component is taken as a well layer, different AlGaN-GaN are used as barrier layers including an AlGaN barrier layer for fixing the Al component, an AlGaN barrier layer with the Al component continuously reduced along a growth direction, and a GaN barrier layer. The InGaN/AlGaN-GaN based multiple-quantum well structure is capable of effectively relieving stress at the barrier and well interface, reducing bending of energy bands, controlling electron and hole radiative recombination regions and improving electron and hole injection efficiency and radiative recombination efficiency, thereby facilitating achievement of GaN based LED structures with good crystal quality, high internal quantum efficiency and high luminous efficiency.
Description
Technical field
The present invention relates to a kind of InGaN/AlGaN-GaN based multiquantum-well structure and preparation method thereof, belong to technical field of semiconductors.
Background technology
GaN based light-emitting diode (LED) can directly be converted to luminous energy by electric energy, photoelectric conversion efficiency is considerably beyond traditional incandescent lamp and fluorescent lamp, there is the advantages such as high brightness, low energy consumption, long-life, corresponding speed be fast, and because GaN sill can be launched the whole wave band from ultraviolet to visible ray, be therefore all widely used in fields such as indicator light, backlight, display, family expenses and commercial illuminations.But, in epitaxially grown GaN based LED construction, due to the bipolarity input of charge carrier, electronics and hole concentrate on respectively in the quantum well near N-type doped region and P type doped region, cause charge carrier uneven distribution between quantum well, and the overlap integral of the electronics in quantum well and the wave function in hole reduces, particularly for the hole of low mobility, high effective mass, this inhomogeneities is more obvious, thereby the recombination probability of charge carrier is reduced, and affects luminous efficiency.In addition, due to the intrinsic polarity effect of GaN sill, the polarized electric field producing causes band curvature in Multiple Quantum Well, and conduction band is lower in p-type one side, and N-shaped one side is elevated, thereby the band edge of Multiple Quantum Well is by the square triangle of changing into, the base band energy of conduction band reduces, and the base band energy of valence band raises, and gap width is between the two narrowed, cause emission wavelength red shift, further affect luminous efficiency.
Summary of the invention
The problems such as technical problem to be solved by this invention is that the recombination probability of Multiple Quantum Well charge carrier of the prior art is low, and luminous efficiency is not high.Thereby provide InGaN/AlGaN-GaN based multiquantum-well structure that a kind of crystal mass is good, charge carrier recombination probability large, quantum luminous efficiency is high and preparation method thereof.
For solving the problems of the technologies described above, the present invention is achieved by the following technical solutions:
The invention provides a kind of InGaN/AlGaN-GaN based multiquantum-well structure, its structure is followed successively by along the direction of growth: an AlGaN-GaN builds layer, the fixing InGaN quantum well layer of In component, the 2nd AlGaN-GaN and builds layer, fixing InGaN quantum well layer, the 3rd AlGaN-GaN of In component and build layer, fixing InGaN quantum well layer, the 4th AlGaN-GaN of In component and build that layer, fixing InGaN quantum well layer, the 5th AlGaN-GaN of In component are built layer, fixing InGaN quantum well layer and the 6th GaN of In component builds layer;
A described AlGaN-GaN builds layer comprises fixing Al component successively Al along the direction of growth
aga
1-an builds layer, Al component and is all along the direction of growth AlGaN base layer, the GaN base layer that continuity reduces; The Al component that the one AlGaN builds layer becomes 0 along the direction of growth from a, and wherein the span of a is 0.08-0.1;
Described the 2nd AlGaN-GaN builds layer comprises fixing Al component successively Al along the direction of growth
bga
1-bn builds layer, Al component and is all along the direction of growth the 2nd AlGaN base layer, the 2nd GaN base layer that continuity reduces; The Al component that the 2nd AlGaN builds layer becomes 0 along the direction of growth from b, and wherein the span of b is 0.06-0.08;
Described the 3rd AlGaN-GaN builds layer comprises fixing Al component successively Al along the direction of growth
cga
1-cn builds layer, Al component and is all along the direction of growth the 3rd AlGaN base layer, the 3rd GaN base layer that continuity reduces; The Al component that the 3rd AlGaN builds layer becomes 0 along the direction of growth from c, and wherein the span of c is 0.04-0.06;
Described the 4th AlGaN-GaN builds layer comprises fixing Al component successively Al along the direction of growth
dga
1-dn builds layer, Al component and is all along the direction of growth the 4th AlGaN base layer and the 4th GaN base layer that continuity reduces; The Al component that the 4th AlGaN builds layer becomes 0 along the direction of growth from d, and wherein the span of d is 0.02-0.04;
Described the 5th AlGaN-GaN builds layer comprises fixing Al component successively Al along the direction of growth
ega
1-en builds layer, Al component and is all along the direction of growth the 5th AlGaN base layer and the 5th GaN base layer that continuity reduces; The Al component that the 5th AlGaN builds layer becomes 0 along the direction of growth from e, and wherein the span of e is 0-0.02;
The described first to the 5th AlGaN-GaN builds layer, and every layer thickness of the 6th GaN base layer is all the same, and its varied in thickness scope is 10-20nm.
The AlGaN, Al component that the described first to the 5th AlGaN-GaN builds the fixing Al component in layer is all along the direction of growth AlGaN that continuity reduces and builds layer, GaN to build a layer three Thickness Ratio be 1:3:1-1:1:1.
The quantum well layer of described fixing In component is In
xga
1-xn quantum well layer, x immobilizes along the direction of growth, and the number range of x is 0.1-0.2.
Each quantum well layer thickness of described fixing In component is all the same, and its varied in thickness scope is 3-7nm.
Further, provide a kind of method of preparing described InGaN/AlGaN-GaN based multiquantum-well structure, it specifically comprises the steps:
(1) the first to the 5th described AlGaN-GaN build layer growth all taking TEGa as gallium source, TMAl is as aluminium source, NH
3for nitrogenous source, N
2for carrier gas, be that 840 DEG C, pressure are the 100-300s that grows under 400mbar condition in temperature;
(2) the first to the 5th described AlGaN-GaN builds the Al that fixes Al component in layer
aga
1-an builds layer, Al
bga
1-bn builds layer, Al
cga
1-cn builds layer, Al
dga
1-dn builds layer, Al
ega
1-ewhen N builds layer growth, TEGa and TMAl flow all keep constant, and the span of a, b, c, d, e regulates and controls by the initial flow that TEGa is set;
(3) the first to the 5th described AlGaN-GaN builds Al component in layer and is all along the direction of growth flow and the linear flow that reduces TMAl that each AlGaN that continuity reduces builds layer and increase TEGa by growth time internal linear and realizes;
(4) when in the first to the 5th described AlGaN-GaN base layer, each GaN base layer and the 6th GaN build layer growth, TMAl source is in closed condition;
(5) In of described fixing In component
xga
1-xn quantum well layer taking TEGa as gallium source, TMIn is as indium source, NH
3for nitrogenous source, N
2for carrier gas, be that 750 DEG C, pressure are the 40-100s that grows under 400mbar condition in temperature;
In above-mentioned steps, controlling TEGa flow is 50-100sccm, and TMAl flow is 0-30sccm, and TMIn is that the flow in indium source is 30-100sccm, NH
3flow is 4000-4500sccm, carrier gas N
2flow is 400-450sccm.
A kind of LED structure that comprises described InGaN based multiquantum-well structure is also provided, and it is followed successively by the p-GaN layer of substrate, low temperature GaN nucleating layer, the unadulterated u-GaN layer of high temperature, the n-GaN layer of Si doping, described InGaN/AlGaN-GaN based multiquantum-well structure, p-AlGaN electronic barrier layer and Mg doping along the direction of growth.
Technique scheme of the present invention has the following advantages compared to existing technology:
(1) InGaN/AlGaN-GaN based multiquantum-well structure of the present invention, using the InGaN that fixes In component as trap layer, adopt different AlGaN-GaN as building layer, comprise that the fixing AlGaN of Al component builds layer, AlGaN base layer and the GaN of minimizing build layer to Al component continuously along the direction of growth, thereby InGaN/AlGaN-GaN based multiquantum-well structure of the present invention can effectively be alleviated the stress of few base and trap interface, alleviate the bending that can be with, control the radiation recombination region in electronics and hole, improve injection efficiency and the radiation recombination efficiency in electronics and hole.InGaN/AlGaN-GaN based multiquantum-well structure of the present invention is conducive to inner electronics and hole is all limited in the quantum well region of fixing In component, thereby the wave function that effectively hinders electronics and hole produces and separates, the recombination probability of charge carrier is increased, improve the luminous efficiency of Multiple Quantum Well, thereby be conducive to further obtain the GaN based LED construction that crystal mass is good, internal quantum efficiency is high, luminous efficiency is high.
(2) InGaN/AlGaN-GaN based multiquantum-well structure of the present invention, the wherein said first to the 5th AlGaN-GaN builds the Al that fixes Al component in layer
aga
1-an builds layer, Al
bga
1-bn builds layer, Al
cga
1-cn builds layer, Al
dga
1-dn builds layer, Al
ega
1-en builds layer, and the span of a, b, c, d, e reduces successively, thereby the wave function that effectively hinders electronics and hole produces and separates, makes the recombination probability increase of charge carrier.
(3) InGaN/AlGaN-GaN based multiquantum-well structure of the present invention, the wherein said first to the 5th AlGaN-GaN builds and in layer, all includes Al component and be all along the direction of growth AlGaN that continuity reduces and build layer, thereby can effectively alleviate, few AlGaN builds layer and GaN builds the stress that layer is located.
(4) preparation method of InGaN/AlGaN-GaN based multiquantum-well structure of the present invention, for the Al of fixing Al component
aga
1-an builds layer, Al
bga
1-bn builds layer, Al
cga
1-cn builds layer, Al
dga
1-dn builds layer, Al
ega
1-en builds layer, and the span of a, b, c, d, e regulates and controls by the initial flow that TEGa is set, the span of control Al component that like this can be more accurate and effective.
(5) preparation method of InGaN/AlGaN-GaN based multiquantum-well structure of the present invention, the flow and the linear flow that reduces TMAl that increase TEGa by growth time internal linear are realized, and further ensure that Al component is all continuity along the direction of growth and reduces.
Brief description of the drawings
For content of the present invention is more likely to be clearly understood, below in conjunction with accompanying drawing, the present invention is further detailed explanation, and wherein, Fig. 1 is the structural representation of LED of the present invention.Fig. 2 is InGaN/AlGaN-GaN based multiquantum-well structure schematic diagram of the present invention.
In figure, Reference numeral is expressed as: 1-GaN nucleating layer, and the unadulterated u-GaN layer of 2-high temperature, the n-GaN layer of 3-Si doping, 4-1-the one AlGaN-GaN builds the fixing Al component Al in layer
aga
1-an builds layer, the Al component that 4-2-the one AlGaN-GaN builds in layer is all along the direction of growth AlGaN base layer (AlGaN builds layer) that continuity reduces, the GaN that 4-3-the one AlGaN-GaN builds in layer builds layer (GaN builds layer), the InGaN quantum well layer of the fixing In component of 4-4-, 4-5-the 2nd AlGaN-GaN builds the Al that fixes Al component in layer
bga
1-bn builds layer, 4-6-the 2nd AlGaN-GaN builds Al component in layer and is all along the direction of growth AlGaN base layer (the 2nd AlGaN builds layer) that continuity reduces, 4-7-AlGaN-GaN builds GaN in layer and builds layer (the 2nd GaN builds layer), the InGaN quantum well layer of the fixing In component of 4-8-, 4-9-the 3rd AlGaN-GaN builds the Al that fixes Al component in layer
cga
1-cn builds layer, 4-10-the 3rd AlGaN-GaN builds Al component in layer and is all along the direction of growth AlGaN base layer (the 3rd AlGaN builds layer) that continuity reduces, the GaN that 4-11-the 3rd AlGaN-GaN builds in layer builds layer (the 3rd GaN builds layer), the InGaN quantum well layer of the fixing In component of 4-12-, 4-13-the 4th AlGaN-GaN builds the Al that fixes Al component in layer
dga
1-dn builds layer, 4-14-the 4th AlGaN-GaN and builds Al component in layer and be all along the direction of growth AlGaN that continuity reduces and build the GaN that layer (the 4th AlGaN builds layer), 4-15-the 4th AlGaN-GaN build in layer and build layer (the 4th GaN builds layer), the InGaN quantum well layer of the fixing In component of 4-16-, 4-17-the 5th AlGaN-GaN builds the Al that fixes Al component in layer
ega
1-en builds layer, 4-18-the 5th AlGaN-GaN builds Al component in layer and is all along the direction of growth AlGaN base layer (the 5th AlGaN builds layer) that continuity reduces, the GaN that 4-19-the 5th AlGaN-GaN builds in layer builds layer (the 5th GaN builds layer), the InGaN quantum well layer of the fixing In component of 4-20-, 4-21-the 6th GaN builds layer, 5-p-AlGaN electronic barrier layer, the p-GaN layer of 6-Mg doping.
Embodiment
Embodiment 1
The present embodiment provides a kind of LED structure, its structure as shown in Figure 1, is followed successively by the p-GaN layer 6 of Sapphire Substrate, low temperature GaN nucleating layer 1, the unadulterated u-GaN layer 2 of high temperature, the n-GaN layer 3 of Si doping, described InGaN/AlGaN-GaN based multiquantum-well structure 4, p-AlGaN electronic barrier layer 5 and Mg doping along the direction of growth.
Wherein, the structure of described InGaN/AlGaN-GaN based multiple quantum well as shown in Figure 2, it is followed successively by along the direction of growth: an AlGaN-GaN builds layer, the InGaN quantum well layer of fixing In component, the 2nd AlGaN-GaN builds layer, the InGaN quantum well layer of fixing In component, the 3rd AlGaN-GaN builds layer, the InGaN quantum well layer of fixing In component, the 4th AlGaN-GaN builds layer, the InGaN quantum well layer of fixing In component, and the 5th AlGaN-GaN builds layer, the InGaN quantum well layer of fixing In component, the 6th GaN builds layer.
Wherein, a described AlGaN-GaN base layer comprises fixing Al component Al
0.1ga
0.9n builds layer, Al component and is reduced to 0 AlGaN along the direction of growth from 0.1 continuity and builds layer, GaN and builds layer;
Described the 2nd AlGaN-GaN builds layer and comprises fixing Al component Al
0.08ga
0.92n builds layer, Al component and is reduced to 0 AlGaN along the direction of growth from 0.08 continuity and builds layer, GaN and builds layer;
Described the 3rd AlGaN-GaN builds layer and comprises fixing Al component Al
0.06ga
0.94n builds layer, Al component and is reduced to 0 AlGaN along the direction of growth from 0.06 continuity and builds layer, GaN and builds layer;
Described the 4th AlGaN-GaN builds layer and comprises fixing Al component Al
0.04ga
0.96n builds layer, Al component and is reduced to 0 AlGaN along the direction of growth from 0.04 continuity and builds layer, GaN and builds layer;
Described the 5th AlGaN-GaN builds layer and comprises fixing Al component Al
0.02ga
0.98n builds layer, Al component and is reduced to 0 AlGaN along the direction of growth from 0.02 continuity and builds layer, GaN and builds layer;
The InGaN quantum well layer In content of described fixing In component is 0.15.
Further, provide the growing method of described LED structure, the flow of wherein controlling TMIn and be indium source is 50sccm, NH
3flow is 4200sccm, carrier gas N
2flow is 420sccm, specifically comprises the steps:
(1) clean of Sapphire Substrate: at 1060 DEG C of temperature, H
2the 300s that anneals in atmosphere, carries out nitrogen treatment to it subsequently, for subsequent use;
(2) adopt TMGa as gallium source, NH
3as nitrogenous source, H
2as carrier gas, growth temperature is 530 DEG C, and growth time is 120s, and chamber pressure is 600mbar, and annealing temperature is 1040 DEG C, and annealing time is 200s, the described GaN nucleating layer 1 that is 30nm at Grown on Sapphire Substrates thickness;
(3) adopt TMGa as gallium source, NH
3as nitrogenous source, H
2as carrier gas, growth temperature is 1060 DEG C, and growth time is 3600s, and chamber pressure is 600mbar, and on GaN nucleating layer, growth thickness is the unadulterated u-GaN layer 2 of described high temperature of 2 μ m;
(4) adopt TMGa as gallium source, SiH
4as silicon source, NH
3as nitrogenous source, H
2as carrier gas, growth temperature is 1065 DEG C, and growth time is 1800s, and chamber pressure is 600mbar, and on unadulterated u-GaN layer, growth thickness is the n-GaN layer 3 of the described Si doping of 1 μ m;
(5) adopt TEGa as gallium source, TMAl is as aluminium source, NH
3as nitrogenous source, N
2as carrier gas, growth temperature is 840 DEG C, and growth time is 30s, chamber pressure is 400mbar, TEGa flow is fixed as 50sccm, and TMAl flow is fixed as 30sccm, and the described AlGaN-GaN that growth thickness is 3nm on n-GaN layer builds the fixing Al component Al in layer
0.1ga
0.9n builds layer 4-1;
(6) adopt TEGa as gallium source, TMAl is as aluminium source, NH
3as nitrogenous source, N
2as carrier gas, growth temperature is 840 DEG C, and growth time is 70s, and chamber pressure is 400mbar, and in growth time, TEGa flow is increased to 80sccm from 50sccm linearity, and TMAl flow is reduced to 0sccm from 30sccm linearity, at fixing Al component Al
0.1ga
0.9build the Al component that the upper growth thickness of layer 4-1 is 7nm and be reduced to an AlGaN base layer 4-2 of 0 along the direction of growth from 0.1 continuity;
(7) adopt TEGa as gallium source, NH
3as nitrogenous source, N
2as carrier gas, growth temperature is 840 DEG C, and growth time is 50s, and chamber pressure is 400mbar, in growth time, TEGa flow is fixed as 80sccm, is reduced to 0 AlGaN in Al component along the direction of growth from 0.1 continuity and builds the GaN that layer 4-2, growth thickness is 5nm and build a layer 4-3;
(8) adopting TEGa is gallium source, NH
3for nitrogenous source, N
2for carrier gas, be that 750 DEG C, pressure are the 50s that grows under 400mbar condition in temperature, build at GaN the InGaN quantum well layer 4-4 that fixing In component that on layer 4-3, growth thickness is 5nm is 0.15;
(9) adopt TEGa as gallium source, TMAl is as aluminium source, NH
3as nitrogenous source, N
2as carrier gas, growth temperature is 840 DEG C, growth time is 40s, chamber pressure is 400mbar, TEGa flow is fixed as 56sccm, TMAl flow is fixed as 30sccm, and described the 2nd AlGaN-GaN that on the InGaN quantum well layer 4-4 that is 0.15 in fixing In component, growth thickness is 4nm builds the fixing Al component Al in layer
0.08ga
0.92n builds layer 4-5;
(10) adopt TEGa as gallium source, TMAl is as aluminium source, NH
3as nitrogenous source, N
2as carrier gas, growth temperature is 840 DEG C, and growth time is 60s, and chamber pressure is 400mbar, and in growth time, TEGa flow is increased to 80sccm from 56sccm linearity, and TMAl flow is reduced to 0sccm from 30sccm linearity, at fixing Al component Al
0.08ga
0.92n builds the Al component that the upper growth thickness of layer 4-5 is 6nm and is reduced to an AlGaN base layer 4-6 of 0 along the direction of growth from 0.08 continuity;
(11) adopt TEGa as gallium source, NH
3as nitrogenous source, N
2as carrier gas, growth temperature is 840 DEG C, and growth time is 50s, and chamber pressure is 400mbar, in growth time, TEGa flow is fixed as 80sccm, is reduced to 0 AlGaN in Al component along the direction of growth from 0.08 continuity and builds the GaN that layer 4-6, growth thickness is 5nm and build a layer 4-7;
(12) adopting TEGa is gallium source, NH
3for nitrogenous source, N
2for carrier gas, be that 750 DEG C, pressure are the 50s that grows under 400mbar condition in temperature, build at GaN the InGaN quantum well layer 4-8 that fixing In component that layer 4-3 growth thickness is 5nm is 0.15;
(13) adopt TEGa as gallium source, TMAl is as aluminium source, NH
3as nitrogenous source, N
2as carrier gas, growth temperature is 840 DEG C, growth time is 50s, chamber pressure is 400mbar, TEGa flow is fixed as 62sccm, TMAl flow is fixed as 30sccm, and described the 3rd AlGaN-GaN that on the InGaN quantum well layer 4-8 that is 0.15 in fixing In component, growth thickness is 5nm builds the fixing Al component Al in layer
0.06ga
0.94n builds layer 4-9;
(14) adopt TEGa as gallium source, TMAl is as aluminium source, NH
3as nitrogenous source, N
2as carrier gas, growth temperature is 840 DEG C, and growth time is 50s, and chamber pressure is 400mbar, and in growth time, TEGa flow is increased to 80sccm from 62sccm linearity, and TMAl flow is reduced to 0sccm from 30sccm linearity, at fixing Al component Al
0.06ga
0.94n builds the Al component that the upper growth thickness of layer 4-9 is 5nm and is reduced to an AlGaN base layer 4-10 of 0 along the direction of growth from 0.06 continuity;
(15) adopt TEGa as gallium source, NH
3as nitrogenous source, N
2as carrier gas, growth temperature is 840 DEG C, and growth time is 50s, and chamber pressure is 400mbar, in growth time, TEGa flow is fixed as 80sccm, is reduced to 0 AlGaN in Al component along the direction of growth from 0.06 continuity and builds the GaN that layer 4-10, growth thickness is 5nm and build a layer 4-11;
(16) adopting TEGa is gallium source, NH
3for nitrogenous source, N
2for carrier gas, be that 750 DEG C, pressure are the 50s that grows under 400mbar condition in temperature, build at GaN the InGaN quantum well layer 4-12 that fixing In component that layer 4-11 growth thickness is 5nm is 0.15;
(17) adopt TEGa as gallium source, TMAl is as aluminium source, NH
3as nitrogenous source, N
2as carrier gas, growth temperature is 840 DEG C, growth time is 60s, chamber pressure is 400mbar, TEGa flow is fixed as 68sccm, TMAl flow is fixed as 30sccm, and described the 4th AlGaN-GaN that on the InGaN quantum well layer 4-12 that is 0.15 in fixing In component, growth thickness is 6nm builds the fixing Al component Al in layer
0.04ga
0.96n builds layer 4-13;
(18) adopt TEGa as gallium source, TMAl is as aluminium source, NH
3as nitrogenous source, N
2as carrier gas, growth temperature is 840 DEG C, and growth time is 40s, and chamber pressure is 400mbar, and in growth time, TEGa flow is increased to 80sccm from 68sccm linearity, and TMAl flow is reduced to 0sccm from 30sccm linearity, at fixing Al component Al
0.04ga
0.96n builds the Al component that the upper growth thickness of layer 4-13 is 4nm and is reduced to an AlGaN base layer 4-14 of 0 along the direction of growth from 0.04 continuity;
(19) adopt TEGa as gallium source, NH
3as nitrogenous source, N
2as carrier gas, growth temperature is 840 DEG C, and growth time is 50s, and chamber pressure is 400mbar, in growth time, TEGa flow is fixed as 80sccm, is reduced to 0 AlGaN in Al component along the direction of growth from 0.04 continuity and builds the GaN that layer 4-14, growth thickness is 5nm and build a layer 4-15;
(20) adopting TEGa is gallium source, NH
3for nitrogenous source, N
2for carrier gas, be that 750 DEG C, pressure are the 50s that grows under 400mbar condition in temperature, build at GaN the InGaN quantum well layer 4-16 that fixing In component that layer 4-11 growth thickness is 5nm is 0.15;
(21) adopt TEGa as gallium source, TMAl is as aluminium source, NH
3as nitrogenous source, N
2as carrier gas, growth temperature is 840 DEG C, growth time is 70s, chamber pressure is 400mbar, TEGa flow is fixed as 74sccm, TMAl flow is fixed as 30sccm, and described the 5th AlGaN-GaN that on the InGaN quantum well layer 4-16 that is 0.15 in fixing In component, growth thickness is 7nm builds the fixing Al component Al in layer
0.02ga
0.98n builds layer 4-17;
(22) adopt TEGa as gallium source, TMAl is as aluminium source, NH
3as nitrogenous source, N
2as carrier gas, growth temperature is 840 DEG C, and growth time is 30s, and chamber pressure is 400mbar, and in growth time, TEGa flow is increased to 80sccm from 74sccm linearity, and TMAl flow is reduced to 0sccm from 30sccm linearity, at fixing Al component Al
0.02ga
0.98n builds the Al component that the upper growth thickness of layer 4-17 is 3nm and is reduced to an AlGaN base layer 4-18 of 0 along the direction of growth from 0.02 continuity;
(23) adopt TEGa as gallium source, NH
3as nitrogenous source, N
2as carrier gas, growth temperature is 840 DEG C, and growth time is 50s, and chamber pressure is 400mbar, in growth time, TEGa flow is fixed as 80sccm, is reduced to 0 AlGaN in Al component along the direction of growth from 0.02 continuity and builds the GaN that layer 4-18, growth thickness is 5nm and build a layer 4-19;
(24) adopting TEGa is gallium source, NH
3for nitrogenous source, N
2for carrier gas, be that 750 DEG C, pressure are the 50s that grows under 400mbar condition in temperature, build at GaN the InGaN quantum well layer 4-20 that fixing In component that layer 4-19 growth thickness is 5nm is 0.15;
(25) adopt TEGa as gallium source, NH
3as nitrogenous source, N
2as carrier gas, growth temperature is 840 DEG C, and growth time is 150s, and chamber pressure is 400mbar, TEG
aflow is fixed as 80sccm, and described the 6th GaN that on the InGaN quantum well layer 4-20 that is 0.15 in fixing In component, growth thickness is 15nm builds layer;
(26) adopt TMGa as gallium source, TMAl is as aluminium source, Cp
2mg is as magnesium source, NH
3as nitrogenous source, H
2as carrier gas, growth temperature is 960 DEG C, and growth time is 300s, and chamber pressure is 150mbar, builds at described the 6th GaN the described p-AlGaN electronic barrier layer 5 that on layer, growth thickness is 10nm;
(27) adopt TMGa as gallium source, Cp
2mg is as magnesium source, NH
3as nitrogenous source, N
2as carrier gas, growth temperature is 960 DEG C, and growth time is 3000s, and chamber pressure is 150mbar, the p-GaN layer 6 of described Mg doping that growth thickness is 10nm on described p-AlGaN electronic barrier layer, and afterwards at the temperature of 760 DEG C, N
2the 1000s that anneals in atmosphere, is finally down to room temperature, must comprise the LED structure of described InGaN/AlGaN-GaN based multiquantum-well structure.
Obviously, above-described embodiment is only for example is clearly described, and the not restriction to execution mode.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here without also giving exhaustive to all execution modes.And the apparent variation of being extended out thus or variation are still among the protection range in the invention.
Claims (7)
1. an InGaN/AlGaN-GaN based multiquantum-well structure, it is characterized in that, its structure is followed successively by along the direction of growth: an AlGaN-GaN builds layer, the fixing InGaN quantum well layer of In component, the 2nd AlGaN-GaN and builds layer, fixing InGaN quantum well layer, the 3rd AlGaN-GaN of In component and build layer, fixing InGaN quantum well layer, the 4th AlGaN-GaN of In component and build that layer, fixing InGaN quantum well layer, the 5th AlGaN-GaN of In component are built layer, fixing InGaN quantum well layer and the 6th GaN of In component builds layer;
A described AlGaN-GaN builds layer comprises fixing Al component successively Al along the direction of growth
aga
1-an builds layer, Al component and is all along the direction of growth AlGaN base layer, the GaN base layer that continuity reduces; The Al component that the one AlGaN builds layer becomes 0 along the direction of growth from a, and wherein the span of a is 0.08-0.1;
Described the 2nd AlGaN-GaN builds layer comprises fixing Al component successively Al along the direction of growth
bga
1-bn builds layer, Al component and is all along the direction of growth the 2nd AlGaN base layer, the 2nd GaN base layer that continuity reduces; The Al component that the 2nd AlGaN builds layer becomes 0 along the direction of growth from b, and wherein the span of b is 0.06-0.08;
Described the 3rd AlGaN-GaN builds layer comprises fixing Al component successively Al along the direction of growth
cga
1-cn builds layer, Al component and is all along the direction of growth the 3rd AlGaN base layer, the 3rd GaN base layer that continuity reduces; The Al component that the 3rd AlGaN builds layer becomes 0 along the direction of growth from c, and wherein the span of c is 0.04-0.06;
Described the 4th AlGaN-GaN builds layer comprises fixing Al component successively Al along the direction of growth
dga
1-dn builds layer, Al component and is all along the direction of growth the 4th AlGaN base layer and the 4th GaN base layer that continuity reduces; The Al component that the 4th AlGaN builds layer becomes 0 along the direction of growth from d, and wherein the span of d is 0.02-0.04;
Described the 5th AlGaN-GaN builds layer comprises fixing Al component successively Al along the direction of growth
ega
1-en builds layer, Al component and is all along the direction of growth the 5th AlGaN base layer and the 5th GaN base layer that continuity reduces; The Al component that the 5th AlGaN builds layer becomes 0 along the direction of growth from e, and wherein the span of e is 0-0.02.
2. a kind of InGaN/AlGaN-GaN based multiquantum-well structure as claimed in claim 1, is characterized in that, the described first to the 5th AlGaN-GaN builds layer, and the 6th GaN base layer, and every layer thickness is all the same, and its varied in thickness scope is 10-20nm.
3. a kind of InGaN/AlGaN-GaN based multiquantum-well structure as claimed in claim 1 or 2, it is characterized in that, the AlGaN, Al component that the described first to the 5th AlGaN-GaN builds the fixing Al component in layer is all along the direction of growth AlGaN that continuity reduces and builds layer, GaN to build a layer three Thickness Ratio be 1:3:1-1:1:1.
4. a kind of InGaN/AlGaN-GaN based multiquantum-well structure as claimed in claim 1 or 2, is characterized in that, the quantum well layer of described fixing In component is In
xga
1-xn quantum well layer, x immobilizes along the direction of growth, and the number range of x is 0.1-0.2.
5. a kind of InGaN/AlGaN-GaN based multiquantum-well structure as claimed in claim 4, is characterized in that, each quantum well layer thickness of described fixing In component is all the same, and its varied in thickness scope is 3-7nm.
6. a method of preparing the arbitrary described InGaN/AlGaN-GaN based multiquantum-well structure of claim 1-5, specifically comprises the steps:
(1) the first to the 5th described AlGaN-GaN build layer growth all taking TEGa as gallium source, TMAl is as aluminium source, NH
3for nitrogenous source, N
2for carrier gas, be that 840 DEG C, pressure are the 100-300s that grows under 400mbar condition in temperature;
(2) the first to the 5th described AlGaN-GaN builds the Al that fixes Al component in layer
aga
1-an builds layer, Al
bga
1-bn builds layer, Al
cga
1-cn builds layer, Al
dga
1-dn builds layer, Al
ega
1-ewhen N builds layer growth, TEGa and TMAl flow all keep constant, and the span of a, b, c, d, e regulates and controls by the initial flow that TEGa is set;
(3) the first to the 5th described AlGaN-GaN builds Al component in layer and is all along the direction of growth flow and the linear flow that reduces TMAl that each AlGaN that continuity reduces builds layer and increase TEGa by growth time internal linear and realizes;
(4) when in the first to the 5th described AlGaN-GaN base layer, each GaN base layer and the 6th GaN build layer growth, TMAl source is in closed condition;
(5) In of described fixing In component
xga
1-xn quantum well layer taking TEGa as gallium source, TMIn is as indium source, NH
3for nitrogenous source, N
2for carrier gas, be that 750 DEG C, pressure are the 40-100s that grows under 400mbar condition in temperature;
In above-mentioned steps, controlling TEGa flow is 50-100sccm, and TMAl flow is 0-30sccm, and TMIn is that the flow in indium source is 30-100sccm, NH
3flow is 4000-4500sccm, carrier gas N
2flow is 400-450sccm.
7. one kind comprises the LED structure of InGaN/AlGaN-GaN based multiquantum-well structure described in claim 1-6 any one, it is characterized in that, be followed successively by the p-GaN layer (6) of n-GaN layer (3), described InGaN/AlGaN-GaN based multiquantum-well structure (4), p-AlGaN electronic barrier layer (5) and the Mg doping of substrate, low temperature GaN nucleating layer (1), the unadulterated u-GaN layer of high temperature (2), Si doping along the direction of growth.
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