CN104201262B - A kind of InGaN/AlGaN-GaN based multiquantum-well structure and preparation method thereof - Google Patents
A kind of InGaN/AlGaN-GaN based multiquantum-well structure and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title abstract description 7
- 230000004888 barrier function Effects 0.000 claims abstract description 216
- 230000012010 growth Effects 0.000 claims abstract description 153
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 66
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 62
- 239000012159 carrier gas Substances 0.000 claims description 33
- 229910052757 nitrogen Inorganic materials 0.000 claims description 31
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 30
- 229910052733 gallium Inorganic materials 0.000 claims description 30
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- 230000009467 reduction Effects 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 238000005215 recombination Methods 0.000 abstract description 8
- 230000006798 recombination Effects 0.000 abstract description 7
- 230000005855 radiation Effects 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 abstract description 3
- 238000005452 bending Methods 0.000 abstract description 2
- 238000002347 injection Methods 0.000 abstract description 2
- 239000007924 injection Substances 0.000 abstract description 2
- 239000011777 magnesium Substances 0.000 description 8
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 230000005428 wave function Effects 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000003100 immobilizing effect Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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Abstract
The present invention relates to a kind of InGaN/AlGaN GaN base multi-quantum pit structure and preparation method thereof, using the InGaN of fixing In component as well layer, use different AlGaN GaN as barrier layer, including the AlGaN barrier layer that Al component is fixing, AlGaN barrier layer that Al component reduces continuously along the direction of growth and GaN barrier layer, InGaN/AlGaN GaN base multi-quantum pit structure of the present invention can effectively alleviate few base and the stress of trap interface, alleviate the bending that can carry, control electronics and the radiation recombination region in hole, improve electronics and the injection efficiency in hole and radiation recombination efficiency, thus it is good to be conducive to obtaining crystal mass further, internal quantum efficiency is high, the GaN base LED structure that luminous efficiency is high.
Description
Technical field
The present invention relates to a kind of InGaN/AlGaN-GaN based multiquantum-well structure and preparation thereof
Method, belongs to technical field of semiconductors.
Background technology
Electric energy can be converted directly into luminous energy by GaN base light emitting diode (LED), and photoelectricity turns
Change efficiency far and exceed traditional electric filament lamp and fluorescent lamp, there is high brightness, low energy consumption, longevity
The advantages such as life, corresponding speed are fast, and owing to GaN base material can be launched from ultraviolet to can
See the whole wave band of light, therefore in display lamp, backlight, display, domestic and commercial illumination
All it is widely used in field.But, in epitaxially grown GaN base LED structure,
Owing to the bipolarity of carrier inputs, electronics and hole concentrate on respectively near n-type doping district
With in the SQW of p-type doped region, cause carrier uneven distribution between SQW, quantum
The overlap integral of electronics in trap and the wave function in hole reduces, especially for low mobility,
The hole of high effective mass, this inhomogeneities becomes apparent from, so that carrier is compound
Probability reduces, and affects luminous efficiency.Additionally, due to the polarity effect that GaN base material is intrinsic,
The polarized electric field produced causes band curvature in MQW, and conduction band is relatively low in p-type side, n
Type side is elevated, thus the band edge of MQW is by square triangle of changing into, the base of conduction band
Band energy reduces, and the base band energy of valence band raises, and makes gap width between the two narrow, leads
Photoluminescence red shift of wavelength, affects luminous efficiency further.
Summary of the invention
The technical problem to be solved is MQW carrier of the prior art
The problems such as recombination probability is low, and luminous efficiency is the highest.Thus provide that a kind of crystal mass is good, current-carrying
The InGaN/AlGaN-GaN based multiple quantum well knot that sub-recombination probability is big, quantum luminous efficiency is high
Structure and preparation method thereof.
For solving above-mentioned technical problem, the present invention is achieved by the following technical solutions:
The present invention provides a kind of InGaN/AlGaN-GaN based multiquantum-well structure, its structure edge
The direction of growth is followed successively by: the InGaN quantum that an AlGaN-GaN barrier layer, In component are fixing
The fixing InGaN quantum well layer of well layer, the 2nd AlGaN-GaN barrier layer, In component, the 3rd
The fixing InGaN quantum well layer of AlGaN-GaN barrier layer, In component, the 4th AlGaN-GaN
The fixing InGaN quantum well layer of barrier layer, In component, the 5th AlGaN-GaN barrier layer, In group
Divide fixing InGaN quantum well layer and the 6th GaN barrier layer；
A described AlGaN-GaN barrier layer includes fixing Al component successively along the direction of growth
AlaGa1-aN barrier layer, Al component are all built along the AlGaN that the direction of growth is seriality reduction
Layer, a GaN barrier layer；The Al component of the oneth AlGaN barrier layer becomes along the direction of growth from a
Being 0, wherein the span of a is 0.08-0.1；
Described 2nd AlGaN-GaN barrier layer includes fixing Al component successively along the direction of growth
AlbGa1-bN barrier layer, Al component are all built along the 2nd AlGaN that the direction of growth is seriality reduction
Layer, the 2nd GaN barrier layer；The Al component of the 2nd AlGaN barrier layer becomes along the direction of growth from b
Being 0, wherein the span of b is 0.06-0.08；
Described 3rd AlGaN-GaN barrier layer includes fixing Al component successively along the direction of growth
AlcGa1-cN barrier layer, Al component are all built along the 3rd AlGaN that the direction of growth is seriality reduction
Layer, the 3rd GaN barrier layer；The Al component of the 3rd AlGaN barrier layer becomes along the direction of growth from c
Being 0, wherein the span of c is 0.04-0.06；
Described 4th AlGaN-GaN barrier layer includes fixing Al component successively along the direction of growth
AldGa1-dN barrier layer, Al component are all built along the 4th AlGaN that the direction of growth is seriality reduction
Layer and the 4th GaN barrier layer；The Al component of the 4th AlGaN barrier layer becomes along the direction of growth from d
Being 0, wherein the span of d is 0.02-0.04；
Described 5th AlGaN-GaN barrier layer includes fixing Al component successively along the direction of growth
AleGa1-eN barrier layer, Al component are all built along the 5th AlGaN that the direction of growth is seriality reduction
Layer and the 5th GaN barrier layer；The Al component of the 5th AlGaN barrier layer becomes along the direction of growth from e
Being 0, wherein the span of e is 0-0.02；
Described first to the 5th AlGaN-GaN barrier layer, and every thickness of the 6th GaN barrier layer
As spending all, its thickness excursion is 10-20nm.
The AlGaN of the fixing Al component in described first to the 5th AlGaN-GaN barrier layer,
Al component is all that the AlGaN barrier layer that reduces of seriality, GaN barrier layer three are thick along the direction of growth
Degree ratio is 1:3:1-1:1:1.
The quantum well layer of described fixing In component is InxGa1-xN quantum well layer, x is along growth side
To immobilizing, the numerical range of x is 0.1-0.2.
Each quantum well layer thickness of described fixing In component all as, its thickness excursion
For 3-7nm.
Further, it is provided that one prepares described InGaN/AlGaN-GaN based multiquantum-well structure
Method, it specifically includes following steps:
(1) first described in the 5th AlGaN-GaN barrier layer growth all with TEGa be gallium source,
TMAl is aluminum source, NH3For nitrogen source, N2For carrier gas, temperature be 840 DEG C, pressure be
100-300s is grown under the conditions of 400mbar；
(2) first described in fixes Al component to the 5th AlGaN-GaN barrier layer
AlaGa1-aN barrier layer, AlbGa1-bN barrier layer, AlcGa1-cN barrier layer, AldGa1-dN barrier layer,
AleGa1-eN barrier layer growth time, TEGa and TMAl flow all keeps constant, a, b, c, d,
The span of e regulates and controls by arranging the initial flow of TEGa；
(3) first described in Al component in the 5th AlGaN-GaN barrier layer all along growth side
TEGa is increased by growth time internal linear to each AlGaN barrier layer reduced in seriality
Flow and the linear flow reducing TMAl realize；
(4) first described in is to each GaN barrier layer in the 5th AlGaN-GaN barrier layer and
During six GaN barrier layer growths, TMAl source is closed；
(5) In of the fixing In component described inxGa1-xN quantum well layer with TEGa be gallium source,
TMIn is indium source, NH3For nitrogen source, N2For carrier gas, temperature be 750 DEG C, pressure be
40-100s is grown under the conditions of 400mbar；
In above-mentioned steps, controlling TEGa flow is that 50-100sccm, TMAl flow is
0-30sccm, TMIn be the flow in indium source be 30-100sccm, NH3Flow is
4000-4500sccm, carrier gas N2Flow is 400-450sccm.
Also provide for a kind of LED structure including described InGaN based multiquantum-well structure, its edge
The direction of growth be followed successively by substrate, low temperature GaN nucleating layer, high temperature unadulterated u-GaN layer,
Si doping n-GaN layer, described InGaN/AlGaN-GaN based multiquantum-well structure,
P-AlGaN electronic barrier layer and the p-GaN layer of Mg doping.
The technique scheme of the present invention has the advantage that compared to existing technology
(1) InGaN/AlGaN-GaN based multiquantum-well structure of the present invention, with fixing
The InGaN of In component as well layer, use different AlGaN-GaN as barrier layer, including
The AlGaN that the fixing AlGaN barrier layer of Al component, Al component reduce continuously along the direction of growth
Barrier layer and GaN barrier layer, thus InGaN/AlGaN-GaN based multiple quantum well of the present invention
Structure can effectively alleviate few base and the stress of trap interface, alleviates the bending that can carry, and controls electricity
Son and the radiation recombination region in hole, improve electronics and the injection efficiency in hole and radiation recombination effect
Rate.InGaN/AlGaN-GaN based multiquantum-well structure of the present invention is conducive to internal
Electronics and hole are all limited in the quantum well region of fixing In component, thus effectively hinder
The wave function in electronics and hole produces and separates, and makes the recombination probability of carrier increase, and improves volume
The luminous efficiency of sub-trap, thus be conducive to obtaining further that crystal mass is good, internal quantum efficiency is high,
The GaN base LED structure that luminous efficiency is high.
(2) InGaN/AlGaN-GaN based multiquantum-well structure of the present invention, Qi Zhongsuo
State the Al fixing Al component in the first to the 5th AlGaN-GaN barrier layeraGa1-aN barrier layer,
AlbGa1-bN barrier layer, AlcGa1-cN barrier layer, AldGa1-dN barrier layer, AleGa1-eN barrier layer, a,
The span of b, c, d, e is sequentially reduced, thus effectively hinders electronics and the wave function in hole
Produce and separate, make the recombination probability of carrier increase.
(3) InGaN/AlGaN-GaN based multiquantum-well structure of the present invention, Qi Zhongsuo
State the first to the 5th AlGaN-GaN barrier layer all includes Al component all along the direction of growth in even
The AlGaN barrier layer that continuous property reduces such that it is able to effectively alleviate few AlGaN barrier layer and GaN
Stress at barrier layer.
(4) the preparation side of InGaN/AlGaN-GaN based multiquantum-well structure of the present invention
Method, for the Al of fixing Al componentaGa1-aN barrier layer, AlbGa1-bN barrier layer, AlcGa1-cN
Barrier layer, AldGa1-dN barrier layer, AleGa1-eN barrier layer, the span of a, b, c, d, e is led to
Cross and the initial flow of TEGa is set regulates and controls, control Al that so can be more accurate and effective
The span of component.
(5) the preparation side of InGaN/AlGaN-GaN based multiquantum-well structure of the present invention
Method, increases the flow of TEGa and the linear flow reducing TMAl by growth time internal linear
Realize, be further ensured that Al component all along the direction of growth be seriality reduce.
Accompanying drawing explanation
In order to make present disclosure be more likely to be clearly understood, below in conjunction with the accompanying drawings, right
The present invention is described in further detail, and wherein, Fig. 1 is the knot of LED of the present invention
Structure schematic diagram.Fig. 2 is InGaN/AlGaN-GaN based multiquantum-well structure of the present invention
Schematic diagram.
In figure, reference is expressed as: 1-GaN nucleating layer, the unadulterated u-GaN of 2-high temperature
Layer, the n-GaN layer of 3-Si doping, the fixing Al in 4-1-the oneth AlGaN-GaN barrier layer
Component AlaGa1-aN barrier layer, the Al component in 4-2-the oneth AlGaN-GaN barrier layer is all along raw
Length direction is the AlGaN barrier layer (an AlGaN barrier layer) that seriality reduces, 4-3-first
GaN barrier layer (a GaN barrier layer) in AlGaN-GaN barrier layer, 4-4-fixes In group
The InGaN quantum well layer divided, fixes Al component in 4-5-the 2nd AlGaN-GaN barrier layer
AlbGa1-bN barrier layer, in 4-6-the 2nd AlGaN-GaN barrier layer, Al component is all along the direction of growth
The AlGaN barrier layer (the 2nd AlGaN barrier layer) reduced in seriality, 4-7-AlGaN-GaN
GaN barrier layer (the 2nd GaN barrier layer) in barrier layer, 4-8-fixes the InGaN amount of In component
Sub-well layer, fixes the Al of Al component in 4-9-the 3rd AlGaN-GaN barrier layercGa1-cN barrier layer,
In 4-10-the 3rd AlGaN-GaN barrier layer Al component all along the direction of growth be seriality reduce
AlGaN barrier layer (the 3rd AlGaN barrier layer), in 4-11-the 3rd AlGaN-GaN barrier layer
GaN barrier layer (the 3rd GaN barrier layer), 4-12-fixes the InGaN quantum well layer of In component,
4-13-the 4th AlGaN-GaN barrier layer is fixed the Al of Al componentdGa1-dN barrier layer, 4-14-
In 4th AlGaN-GaN barrier layer Al component all along the direction of growth be seriality reduce
In AlGaN barrier layer (the 4th AlGaN barrier layer), 4-15-the 4th AlGaN-GaN barrier layer
GaN barrier layer (the 4th GaN barrier layer), 4-16-fixes the InGaN quantum well layer of In component,
4-17-the 5th AlGaN-GaN barrier layer is fixed the Al of Al componenteGa1-eN barrier layer, 4-18-
In 5th AlGaN-GaN barrier layer Al component all along the direction of growth be seriality reduce
AlGaN barrier layer (the 5th AlGaN barrier layer), in 4-19-the 5th AlGaN-GaN barrier layer
GaN barrier layer (the 5th GaN barrier layer), 4-20-fixes the InGaN quantum well layer of In component,
4-21-the 6th GaN barrier layer, 5-p-AlGaN electronic barrier layer, the p-GaN of 6-Mg doping
Layer.
Detailed description of the invention
Embodiment 1
The present embodiment provides a kind of LED structure, and its structure is as it is shown in figure 1, along the direction of growth
Be followed successively by Sapphire Substrate, low temperature GaN nucleating layer 1, high temperature unadulterated u-GaN layer 2,
Si doping n-GaN layer 3, described InGaN/AlGaN-GaN based multiquantum-well structure 4,
The p-GaN layer 6 of p-AlGaN electronic barrier layer 5 and Mg doping.
Wherein, described InGaN/AlGaN-GaN based multiple quantum well structure as in figure 2 it is shown,
It is followed successively by along the direction of growth: an AlGaN-GaN barrier layer, the InGaN of fixing In component
Quantum well layer, the 2nd AlGaN-GaN barrier layer, the InGaN quantum well layer of fixing In component,
3rd AlGaN-GaN barrier layer, the InGaN quantum well layer of fixing In component, the 4th
AlGaN-GaN barrier layer, the InGaN quantum well layer of fixing In component, the 5th AlGaN-GaN
Barrier layer, the InGaN quantum well layer of fixing In component, the 6th GaN barrier layer.
Wherein, a described AlGaN-GaN barrier layer includes fixing Al component Al0.1Ga0.9N builds
Layer, Al component are reduced to AlGaN barrier layer, the GaN of 0 along the direction of growth from 0.1 seriality
Barrier layer；
Described 2nd AlGaN-GaN barrier layer includes fixing Al component Al0.08Ga0.92N barrier layer,
Al component is reduced to AlGaN barrier layer, the GaN barrier layer of 0 along the direction of growth from 0.08 seriality；
Described 3rd AlGaN-GaN barrier layer includes fixing Al component Al0.06Ga0.94N barrier layer,
Al component is reduced to AlGaN barrier layer, the GaN barrier layer of 0 along the direction of growth from 0.06 seriality；
Described 4th AlGaN-GaN barrier layer includes fixing Al component Al0.04Ga0.96N barrier layer,
Al component is reduced to AlGaN barrier layer, the GaN barrier layer of 0 along the direction of growth from 0.04 seriality；
Described 5th AlGaN-GaN barrier layer includes fixing Al component Al0.02Ga0.98N barrier layer,
Al component is reduced to AlGaN barrier layer, the GaN barrier layer of 0 along the direction of growth from 0.02 seriality；
The InGaN quantum well layer In content of described fixing In component is 0.15.
Further, it is provided that the growing method of described LED structure, wherein controlling TMIn is indium
The flow in source is 50sccm, NH3Flow is 4200sccm, carrier gas N2Flow is 420sccm,
Specifically include following steps:
(1) cleaning of Sapphire Substrate processes: at a temperature of 1060 DEG C, H2Atmosphere is annealed
300s, carries out nitrogen treatment to it subsequently, standby；
(2) use TMGa as gallium source, NH3As nitrogen source, H2As carrier gas, growth
Temperature is 530 DEG C, and growth time is 120s, and chamber pressure is 600mbar, annealing temperature
Being 1040 DEG C, annealing time is 200s, and growth thickness is 30nm's the most on a sapphire substrate
Described GaN nucleating layer 1；
(3) use TMGa as gallium source, NH3As nitrogen source, H2As carrier gas, growth
Temperature is 1060 DEG C, and growth time is 3600s, and chamber pressure is 600mbar, i.e. exists
On GaN nucleating layer, growth thickness is the described high temperature unadulterated u-GaN layer 2 of 2 μm；
(4) use TMGa as gallium source, SiH4As silicon source, NH3As nitrogen source, H2
As carrier gas, growth temperature is 1065 DEG C, and growth time is 1800s, and chamber pressure is
600mbar, i.e. on unadulterated u-GaN layer, growth thickness is the described Si doping of 1 μm
N-GaN layer 3；
(5) using TEGa as gallium source, TMAl is as aluminum source, NH3As nitrogen source,
N2As carrier gas, growth temperature is 840 DEG C, and growth time is 30s, and chamber pressure is
400mbar, TEGa flow is fixed as 50sccm, TMAl flow and is fixed as 30sccm, i.e. exists
Fixing during growth thickness is a described AlGaN-GaN barrier layer of 3nm on n-GaN layer
Al component Al0.1Ga0.9N barrier layer 4-1；
(6) using TEGa as gallium source, TMAl is as aluminum source, NH3As nitrogen source,
N2As carrier gas, growth temperature is 840 DEG C, and growth time is 70s, and chamber pressure is
400mbar, in growth time, TEGa flow increases linearly to 80sccm from 50sccm,
TMAl flow is linearly reduced to 0sccm from 30sccm, i.e. in fixing Al component Al0.1Ga0.9
In barrier layer 4-1, growth thickness is that the Al component of 7nm reduces along the direction of growth from 0.1 seriality
To AlGaN barrier layer 4-2 of 0；
(7) use TEGa as gallium source, NH3As nitrogen source, N2As carrier gas, growth
Temperature is 840 DEG C, and growth time is 50s, and chamber pressure is 400mbar, when growth
Interior TEGa flow is fixed as 80sccm, i.e. continuous from 0.1 along the direction of growth in Al component
Property is reduced to GaN barrier layer 4-3 that growth thickness in AlGaN barrier layer 4-2 of 0 is 5nm；
(8) using TEGa is gallium source, NH3For nitrogen source, N2For carrier gas, temperature be 750 DEG C,
Pressure is growth 50s under the conditions of 400mbar, and i.e. in GaN barrier layer 4-3, growth thickness is
The InGaN quantum well layer 4-4 that fixing In component is 0.15 of 5nm；
(9) using TEGa as gallium source, TMAl is as aluminum source, NH3As nitrogen source,
N2As carrier gas, growth temperature is 840 DEG C, and growth time is 40s, and chamber pressure is
400mbar, TEGa flow is fixed as 56sccm, TMAl flow and is fixed as 30sccm, i.e. exists
Fixing growth thickness on the InGaN quantum well layer 4-4 that In component is 0.15 is the described of 4nm
Fixing Al component Al in 2nd AlGaN-GaN barrier layer0.08Ga0.92N barrier layer 4-5；
(10) using TEGa as gallium source, TMAl is as aluminum source, NH3As nitrogen source,
N2As carrier gas, growth temperature is 840 DEG C, and growth time is 60s, and chamber pressure is
400mbar, in growth time, TEGa flow increases linearly to 80sccm from 56sccm,
TMAl flow is linearly reduced to 0sccm from 30sccm, i.e. in fixing Al component
Al0.08Ga0.92In N barrier layer 4-5 growth thickness be the Al component of 6nm along the direction of growth from 0.08
Seriality is reduced to AlGaN barrier layer 4-6 of 0；
(11) use TEGa as gallium source, NH3As nitrogen source, N2As carrier gas, growth
Temperature is 840 DEG C, and growth time is 50s, and chamber pressure is 400mbar, when growth
Interior TEGa flow is fixed as 80sccm, i.e. in Al component along the direction of growth from 0.08 even
Continuous property is reduced to GaN barrier layer 4-7 that growth thickness in AlGaN barrier layer 4-6 of 0 is 5nm；
(12) using TEGa is gallium source, NH3For nitrogen source, N2For carrier gas, in temperature it is
750 DEG C, pressure be to grow 50s under the conditions of 400mbar, i.e. in GaN barrier layer 4-3 growth thickness
Degree is the InGaN quantum well layer 4-8 that fixing In component is 0.15 of 5nm；
(13) using TEGa as gallium source, TMAl is as aluminum source, NH3As nitrogen source,
N2As carrier gas, growth temperature is 840 DEG C, and growth time is 50s, and chamber pressure is
400mbar, TEGa flow is fixed as 62sccm, TMAl flow and is fixed as 30sccm, i.e. exists
Fixing growth thickness on the InGaN quantum well layer 4-8 that In component is 0.15 is the described of 5nm
Fixing Al component Al in 3rd AlGaN-GaN barrier layer0.06Ga0.94N barrier layer 4-9；
(14) using TEGa as gallium source, TMAl is as aluminum source, NH3As nitrogen source,
N2As carrier gas, growth temperature is 840 DEG C, and growth time is 50s, and chamber pressure is
400mbar, in growth time, TEGa flow increases linearly to 80sccm from 62sccm,
TMAl flow is linearly reduced to 0sccm from 30sccm, i.e. in fixing Al component
Al0.06Ga0.94In N barrier layer 4-9 growth thickness be the Al component of 5nm along the direction of growth from 0.06
Seriality is reduced to AlGaN barrier layer 4-10 of 0；
(15) use TEGa as gallium source, NH3As nitrogen source, N2As carrier gas, growth
Temperature is 840 DEG C, and growth time is 50s, and chamber pressure is 400mbar, when growth
Interior TEGa flow is fixed as 80sccm, i.e. in Al component along the direction of growth from 0.06 even
Continuous property is reduced to GaN barrier layer 4-11 that growth thickness in AlGaN barrier layer 4-10 of 0 is 5nm；
(16) using TEGa is gallium source, NH3For nitrogen source, N2For carrier gas, in temperature it is
750 DEG C, pressure be to grow 50s under the conditions of 400mbar, i.e. in GaN barrier layer 4-11 growth thickness
Degree is the InGaN quantum well layer 4-12 that fixing In component is 0.15 of 5nm；
(17) using TEGa as gallium source, TMAl is as aluminum source, NH3As nitrogen source,
N2As carrier gas, growth temperature is 840 DEG C, and growth time is 60s, and chamber pressure is
400mbar, TEGa flow is fixed as 68sccm, TMAl flow and is fixed as 30sccm, i.e. exists
Fixing growth thickness on the InGaN quantum well layer 4-12 that In component is 0.15 is the institute of 6nm
State fixing Al component Al in the 4th AlGaN-GaN barrier layer0.04Ga0.96N barrier layer 4-13；
(18) using TEGa as gallium source, TMAl is as aluminum source, NH3As nitrogen source,
N2As carrier gas, growth temperature is 840 DEG C, and growth time is 40s, and chamber pressure is
400mbar, in growth time, TEGa flow increases linearly to 80sccm from 68sccm,
TMAl flow is linearly reduced to 0sccm from 30sccm, i.e. in fixing Al component
Al0.04Ga0.96In N barrier layer 4-13 growth thickness be the Al component of 4nm along the direction of growth from 0.04
Seriality is reduced to AlGaN barrier layer 4-14 of 0；
(19) use TEGa as gallium source, NH3As nitrogen source, N2As carrier gas, growth
Temperature is 840 DEG C, and growth time is 50s, and chamber pressure is 400mbar, when growth
Interior TEGa flow is fixed as 80sccm, i.e. in Al component along the direction of growth from 0.04 even
Continuous property is reduced to GaN barrier layer 4-15 that growth thickness in AlGaN barrier layer 4-14 of 0 is 5nm；
(20) using TEGa is gallium source, NH3For nitrogen source, N2For carrier gas, in temperature it is
750 DEG C, pressure be to grow 50s under the conditions of 400mbar, i.e. in GaN barrier layer 4-11 growth thickness
Degree is the InGaN quantum well layer 4-16 that fixing In component is 0.15 of 5nm；
(21) using TEGa as gallium source, TMAl is as aluminum source, NH3As nitrogen source,
N2As carrier gas, growth temperature is 840 DEG C, and growth time is 70s, and chamber pressure is
400mbar, TEGa flow is fixed as 74sccm, TMAl flow and is fixed as 30sccm, i.e. exists
Fixing growth thickness on the InGaN quantum well layer 4-16 that In component is 0.15 is the institute of 7nm
State fixing Al component Al in the 5th AlGaN-GaN barrier layer0.02Ga0.98N barrier layer 4-17；
(22) using TEGa as gallium source, TMAl is as aluminum source, NH3As nitrogen source,
N2As carrier gas, growth temperature is 840 DEG C, and growth time is 30s, and chamber pressure is
400mbar, in growth time, TEGa flow increases linearly to 80sccm from 74sccm,
TMAl flow is linearly reduced to 0sccm from 30sccm, i.e. in fixing Al component
Al0.02Ga0.98In N barrier layer 4-17 growth thickness be the Al component of 3nm along the direction of growth from 0.02
Seriality is reduced to AlGaN barrier layer 4-18 of 0；
(23) use TEGa as gallium source, NH3As nitrogen source, N2As carrier gas, growth
Temperature is 840 DEG C, and growth time is 50s, and chamber pressure is 400mbar, when growth
Interior TEGa flow is fixed as 80sccm, i.e. in Al component along the direction of growth from 0.02 even
Continuous property is reduced to GaN barrier layer 4-19 that growth thickness in AlGaN barrier layer 4-18 of 0 is 5nm；
(24) using TEGa is gallium source, NH3For nitrogen source, N2For carrier gas, in temperature it is
750 DEG C, pressure be to grow 50s under the conditions of 400mbar, i.e. in GaN barrier layer 4-19 growth thickness
Degree is the InGaN quantum well layer 4-20 that fixing In component is 0.15 of 5nm；
(25) use TEGa as gallium source, NH3As nitrogen source, N2As carrier gas, growth
Temperature is 840 DEG C, and growth time is 150s, and chamber pressure is 400mbar, TEGaStream
Amount is fixed as 80sccm, i.e. at the InGaN quantum well layer 4-20 that fixing In component is 0.15
Upper growth thickness is the described 6th GaN barrier layer of 15nm；
(26) using TMGa as gallium source, TMAl is as aluminum source, Cp2Mg as magnesium source,
NH3As nitrogen source, H2As carrier gas, growth temperature is 960 DEG C, and growth time is 300s,
Chamber pressure is 150mbar, and in described 6th GaN barrier layer, growth thickness is 10nm's
Described p-AlGaN electronic barrier layer 5；
(27) use TMGa as gallium source, Cp2Mg is as magnesium source, NH3As nitrogen source,
N2As carrier gas, growth temperature is 960 DEG C, and growth time is 3000s, and chamber pressure is
150mbar, i.e. on described p-AlGaN electronic barrier layer, growth thickness is described in 10nm
The p-GaN layer 6 of Mg doping, afterwards at a temperature of 760 DEG C, N2Anneal in atmosphere 1000s,
Finally it is down to room temperature, described InGaN/AlGaN-GaN based multiquantum-well structure must be included
LED structure.
Obviously, above-described embodiment is only for clearly demonstrating example, and not to reality
Execute the restriction of mode.For those of ordinary skill in the field, at the base of described above
Can also make other changes in different forms on plinth.Here without also cannot be to all
Embodiment give exhaustive.And the obvious change thus extended out or variation are still located
Among the protection domain of the invention.
Claims (7)
1. an InGaN/AlGaN-GaN based multiquantum-well structure, it is characterised in that its structure edge
The direction of growth is followed successively by: the InGaN quantum that an AlGaN-GaN barrier layer, In component are fixing
The fixing InGaN quantum well layer of well layer, the 2nd AlGaN-GaN barrier layer, In component, the 3rd
The fixing InGaN quantum well layer of AlGaN-GaN barrier layer, In component, the 4th AlGaN-GaN
The fixing InGaN quantum well layer of barrier layer, In component, the 5th AlGaN-GaN barrier layer, In group
Divide fixing InGaN quantum well layer and the 6th GaN barrier layer；
A described AlGaN-GaN barrier layer includes fixing Al component successively along the direction of growth
AlaGa1-aN barrier layer, Al component are all built along the AlGaN that the direction of growth is seriality reduction
Layer, a GaN barrier layer；The Al component of the oneth AlGaN barrier layer becomes along the direction of growth from a
Being 0, wherein the span of a is 0.08-0.1；
Described 2nd AlGaN-GaN barrier layer includes fixing Al component successively along the direction of growth
AlbGa1-bN barrier layer, Al component are all built along the 2nd AlGaN that the direction of growth is seriality reduction
Layer, the 2nd GaN barrier layer；The Al component of the 2nd AlGaN barrier layer becomes along the direction of growth from b
Being 0, wherein the span of b is 0.06-0.08；
Described 3rd AlGaN-GaN barrier layer includes fixing Al component successively along the direction of growth
AlcGa1-cN barrier layer, Al component are all built along the 3rd AlGaN that the direction of growth is seriality reduction
Layer, the 3rd GaN barrier layer；The Al component of the 3rd AlGaN barrier layer becomes along the direction of growth from c
Being 0, wherein the span of c is 0.04-0.06；
Described 4th AlGaN-GaN barrier layer includes fixing Al component successively along the direction of growth
AldGa1-dN barrier layer, Al component are all built along the 4th AlGaN that the direction of growth is seriality reduction
Layer and the 4th GaN barrier layer；The Al component of the 4th AlGaN barrier layer becomes along the direction of growth from d
Being 0, wherein the span of d is 0.02-0.04；
Described 5th AlGaN-GaN barrier layer includes fixing Al component successively along the direction of growth
AleGa1-eN barrier layer, Al component are all built along the 5th AlGaN that the direction of growth is seriality reduction
Layer and the 5th GaN barrier layer；The Al component of the 5th AlGaN barrier layer becomes along the direction of growth from e
Being 0, wherein the span of e is 0-0.02.
2. a kind of InGaN/AlGaN-GaN based multiquantum-well structure as claimed in claim 1, its
It is characterised by, described first to the 5th AlGaN-GaN barrier layer, and the 6th GaN barrier layer,
Every layer thickness all as, its thickness excursion is 10-20nm.
3. a kind of InGaN/AlGaN-GaN based multiquantum-well structure as claimed in claim 1 or 2,
It is characterized in that, the fixing Al component in described first to the 5th AlGaN-GaN barrier layer
AlGaN, Al component all along the direction of growth be seriality reduce AlGaN barrier layer, GaN build
Layer three's thickness ratio is for 1:3:1-1:1:1.
4. a kind of InGaN/AlGaN-GaN based multiquantum-well structure as claimed in claim 1 or 2,
It is characterized in that, the InGaN quantum well layer that described In component is fixed is InxGa1-xN SQW
Layer, x immobilizes along the direction of growth, and the numerical range of x is 0.1-0.2.
5. a kind of InGaN/AlGaN-GaN based multiquantum-well structure as claimed in claim 4, its
Be characterised by, the fixing InGaN quantum well layer thickness of described each In component all as, its
Thickness excursion is 3-7nm.
6. prepare claim 1-5 arbitrary described InGaN/AlGaN-GaN based multiple quantum well knot for one kind
The method of structure, specifically includes following steps:
(1) first described in the 5th AlGaN-GaN barrier layer growth all with TEGa be gallium source,
TMAl is aluminum source, NH3For nitrogen source, N2For carrier gas, temperature be 840 DEG C, pressure be
100-300s is grown under the conditions of 400mbar；
(2) first described in fixes Al component to the 5th AlGaN-GaN barrier layer
AlaGa1-aN barrier layer, AlbGa1-bN barrier layer, AlcGa1-cN barrier layer, AldGa1-dN barrier layer,
AleGa1-eN barrier layer growth time, TEGa and TMAl flow all keeps constant, a, b, c, d,
The span of e regulates and controls by arranging the initial flow of TEGa；
(3) first described in Al component in the 5th AlGaN-GaN barrier layer all along growth side
TEGa is increased by growth time internal linear to each AlGaN barrier layer reduced in seriality
Flow and the linear flow reducing TMAl realize；
(4) first described in is to each GaN barrier layer in the 5th AlGaN-GaN barrier layer and
During six GaN barrier layer growths, TMAl source is closed；
(5) the fixing InGaN quantum well layer of the In component described in TEGa be gallium source,
TMIn is indium source, NH3For nitrogen source, N2For carrier gas, temperature be 750 DEG C, pressure be
40-100s is grown under the conditions of 400mbar；
In above-mentioned steps, controlling TEGa flow is that 50-100sccm, TMAl flow is
0-30sccm, TMIn be the flow in indium source be 30-100sccm, NH3Flow is
4000-4500sccm, carrier gas N2Flow is 400-450sccm.
7. one kind includes InGaN/AlGaN-GaN based multiple quantum well described in any one of claim 1-5
The LED structure of structure, it is characterised in that be followed successively by substrate, low temperature GaN along the direction of growth
Nucleating layer (1), high temperature unadulterated u-GaN layer (2), Si doping n-GaN layer (3),
Described InGaN/AlGaN-GaN based multiquantum-well structure (4), p-AlGaN electronic barrier layer
(5) and Mg doping p-GaN layer (6).
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