CN105514235A - Multiple-quantum well structure for optoelectronic device - Google Patents
Multiple-quantum well structure for optoelectronic device Download PDFInfo
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- CN105514235A CN105514235A CN201510993017.6A CN201510993017A CN105514235A CN 105514235 A CN105514235 A CN 105514235A CN 201510993017 A CN201510993017 A CN 201510993017A CN 105514235 A CN105514235 A CN 105514235A
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- potential well
- well layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Abstract
The invention relates to a multiple-quantum well structure for an optoelectronic device. The multiple-quantum well structure is applied to a gallium nitride-based optoelectronic device. The optoelectronic device includes an N type semiconductor layer, a multiple-quantum well layer, a P type electron blocking layer and a P type semiconductor layer which are distributed from a substrate to a surface layer; and barrier layers and potential well layers are overlapped together so as to form the multiple-quantum well layer. In the multiple-quantum well structure, the indium component or thickness of a potential well layer which is most adjacent to the P type semiconductor layer is smaller than that of the other potential well layers, and therefore, the influence of the piezoelectric field of the electron blocking layer on the potential well layer which is most adjacent to the P type semiconductor layer can be offset, and therefore, a problem that the band gap tilt of the potential well layer which is most adjacent to the P type semiconductor layer is larger than that of the other potential well layers can be solved, and by means of engineering adjustment, the luminous purity of the gallium nitride-based optoelectronic device can be effectively improved.
Description
[technical field]
The present invention relates to optoelectronic device structure technology, particularly relate to a kind of multiple quantum trap structure for photoelectric device.
[background technology]
Multiple quantum trap and electronic barrier layer are two kinds of structures being widely used on gallium nitrate based photoelectric device, the photoelectric device of multiple quantum trap is compared with traditional double heterojunction photoelectric device, there is the advantage that luminous efficiency is higher, and electronic barrier layer can increase electronics and the hole probability of recombination at multiple quantum trap, with improving luminous efficiency.
The multiple quantum trap structure of gallium nitrate based photoelectric device forms by the material of two kinds of different band gap is overlapping, wherein potential well layer is generally InGaN, and barrier layer is generally gallium nitride, make to there is stress between the two because potential well layer is different with the lattice constant of barrier layer composition material, this stress can produce piezoelectric field and cause the band gap limit of quantum well to change into triangle by square, p-type gallium nitride side is lower, N-shaped gallium nitride side is higher, band gap width between conduction band and valence band is diminished, causes emission wavelength elongated.
In addition in the side of gallium nitrate based photoelectric device multiple quantum trap structure adjacent p-type gallium nitride, generally can grow up with aluminium gallium nitride alloy is the electronic barrier layer of material, to reduce electronics overflow to p-type gallium nitride; As shown in Figure 1, because the differences between lattice constant of electronic barrier layer (aluminium gallium nitride alloy) and potential well layer (InGaN) composition material is larger, by larger than other potential well layer for the piezoelectric field making last potential well layer of multiple quantum trap structure be subject to, so that the emission wavelength of last potential well layer is longer than other potential well layer, and this will affect the optical purity of photoelectric device.
[summary of the invention]
In order to solve prior art deficiency, the invention provides a kind of multiple quantum trap structure that effectively can improve photoelectric device luminance purity.
In order to realize foregoing invention object, the technical solution used in the present invention is:
For a multiple quantum trap structure for photoelectric device, this photoelectric device comprises by substrate to the n type semiconductor layer on top layer, multiple quantum well layer, P-type electron barrier layer and p type semiconductor layer; Described multiple quantum well layer is by barrier layer and potential well layer is overlapping forms, and in multiple quantum well layer structure, is less than other potential well layer near the potential well layer indium component of p type semiconductor layer or thickness.
Preferably, described barrier layer is gallium nitride.
Preferably, described potential well layer is InGaN.
Preferably, described P-type electron barrier layer is aluminium gallium nitride alloy.
Preferably, the potential well layer utilizing works mode near p type semiconductor layer adjusts potential well layer indium component, makes the band gap width of potential well layer be greater than other potential well layer.
Preferably, the potential well layer band gap width near p type semiconductor layer is greater than the amplitude of other potential well layer band gap width between 0.01 electron-volt to 0.1 electron-volt.
Preferably, the potential well layer utilizing works mode near p type semiconductor layer adjusts potential well layer thickness, makes the thickness of potential well layer be less than other potential well layer.
Preferably, the amplitude being less than other potential well layer thickness near the potential well layer thickness of p type semiconductor layer is at 0.05 how rice to 0.5 how between rice.
The invention has the beneficial effects as follows:
Utilizing works adjustment mode of the present invention, in multiple quantum well layer structure, adjust and be less than other potential well layer near the potential well layer indium component of p type semiconductor layer or thickness, the potential well layer band gap width near p type semiconductor layer is made to be greater than other potential well layer 0.01 electron-volt to 0.1 electron-volt, or make the potential well layer thickness near p type semiconductor layer be less than other potential well layer at 0.05 how rice to 0.5 how rice, so can compensate near p type semiconductor layer potential well layer because of the impact by electronic barrier layer piezoelectric field, improve the problem that band gap inclination is large compared with other potential well layer, to reach the luminance purity effectively improving gallium nitrate based photoelectric device.
[accompanying drawing explanation]
Fig. 1 is gallium nitrate based photoelectric device multiple quantum trap bandgap structure schematic diagram in prior art;
Fig. 2 is the embodiment of the present invention one gallium nitrate based photoelectric device multiple quantum trap bandgap structure schematic diagram;
Fig. 3 is the embodiment of the present invention nitride gallium base photoelectric device multiple quantum trap bandgap structure schematic diagram.
[embodiment]
Embodiment one
For a multiple quantum trap structure for photoelectric device, as shown in Figure 2, this photoelectric device comprises by substrate to the n type semiconductor layer on top layer, multiple quantum well layer, P-type electron barrier layer and p type semiconductor layer; Described multiple quantum well layer is by barrier layer and potential well layer is overlapping forms, and wherein, barrier layer is gallium nitride, and potential well layer is InGaN, and P-type electron barrier layer is aluminium gallium nitride alloy; In multiple quantum well layer structure, potential well layer utilizing works mode near p type semiconductor layer adjusts potential well layer indium component, the band gap width of potential well layer is made to be greater than other potential well layer, wherein, potential well layer band gap width near p type semiconductor layer is greater than the amplitude of other potential well layer band gap width between 0.01 electron-volt to 0.1 electron-volt, so can compensate near p type semiconductor layer potential well layer because the piezoelectric field by electronic barrier layer affects, the problem that the inclination of adjustment band gap is large compared with other potential well layer, improves the luminance purity of gallium nitrate based photoelectric device.
Embodiment two
Unique difference of this embodiment and embodiment one is, as shown in Figure 3, in multiple quantum well layer structure, potential well layer utilizing works mode near p type semiconductor layer adjusts potential well layer thickness, the thickness of potential well layer is made to be less than other potential well layer, wherein, the amplitude being less than other potential well layer thickness near the potential well layer thickness of p type semiconductor layer is at 0.05 how rice to 0.5 how between rice, so can compensate near p type semiconductor layer potential well layer because the piezoelectric field by electronic barrier layer affects, the problem that the inclination of same adjustment band gap is large compared with other potential well layer.The same luminance purity effectively improving gallium nitrate based photoelectric device.
By above embodiment, the mode of utilizing works adjustment, in multiple quantum well layer structure, adjust and be less than other potential well layer near the potential well layer indium component of p type semiconductor layer or thickness, the potential well layer band gap width near p type semiconductor layer is made to be greater than other potential well layer 0.01 electron-volt to 0.1 electron-volt, or make the potential well layer thickness near p type semiconductor layer be less than other potential well layer at 0.05 how rice to 0.5 how rice, compensate near p type semiconductor layer potential well layer because of the impact by electronic barrier layer piezoelectric field, improve the problem that band gap inclination is large compared with other potential well layer, to reach the luminance purity effectively improving gallium nitrate based photoelectric device.
The above embodiment is just preferred embodiment of the present invention, not limits practical range of the present invention with this, and all equivalence changes done according to the principle of the present invention, all should be covered by protection scope of the present invention.
Claims (8)
1., for a multiple quantum trap structure for photoelectric device, this photoelectric device comprises by substrate to the n type semiconductor layer on top layer, multiple quantum well layer, P-type electron barrier layer and p type semiconductor layer; It is characterized in that:
Described multiple quantum well layer is by barrier layer and potential well layer is overlapping forms, and in multiple quantum well layer structure, is less than other potential well layer near the potential well layer indium component of p type semiconductor layer or thickness.
2. a kind of multiple quantum trap structure for photoelectric device according to claim 1, is characterized in that, described barrier layer is gallium nitride.
3. a kind of multiple quantum trap structure for photoelectric device according to claim 1, is characterized in that, described potential well layer is InGaN.
4. a kind of multiple quantum trap structure for photoelectric device according to claim 1, is characterized in that, described P-type electron barrier layer is aluminium gallium nitride alloy.
5. a kind of multiple quantum trap structure for photoelectric device according to claim 1, is characterized in that, the potential well layer utilizing works mode near p type semiconductor layer adjusts potential well layer indium component, makes the band gap width of potential well layer be greater than other potential well layer.
6. a kind of multiple quantum trap structure for photoelectric device according to claim 5, is characterized in that, the potential well layer band gap width near p type semiconductor layer is greater than the amplitude of other potential well layer band gap width between 0.01 electron-volt to 0.1 electron-volt.
7. a kind of multiple quantum trap structure for photoelectric device according to claim 1, is characterized in that, the potential well layer utilizing works mode near p type semiconductor layer adjusts potential well layer thickness, makes the thickness of potential well layer be less than other potential well layer.
8. a kind of multiple quantum trap structure for photoelectric device according to claim 7, is characterized in that, the amplitude being less than other potential well layer thickness near the potential well layer thickness of p type semiconductor layer is at 0.05 how rice to 0.5 how between rice.
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| WO2020211346A1 (en) * | 2019-04-19 | 2020-10-22 | 开发晶照明（厦门）有限公司 | Light-emitting diode |
| CN112420886A (en) * | 2019-08-22 | 2021-02-26 | 株式会社东芝 | Semiconductor light emitting device |
| US11424393B2 (en) | 2019-04-19 | 2022-08-23 | Kaistar Lighting (Xiamen) Co., Ltd. | Light-emitting diode and light-emitting module |
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