CN103151435B - Gallium nitride base light-emitting diode with composite potential barrier - Google Patents
Gallium nitride base light-emitting diode with composite potential barrier Download PDFInfo
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Abstract
The invention discloses a gallium nitride base light-emitting diode with a composite potential barrier. The gallium nitride base light-emitting diode comprises a sapphire substrate, a buffering layer, an n-type gallium nitride epitaxial layer, a multiple quantum well active area, a p-type algan epitaxial layer and a p-type gallium nitride epitaxial layer, wherein the sapphire substrate, the buffering layer, the n-type gallium nitride epitaxial layer, the multiple quantum well active area, the p-type algan epitaxial layer and the p-type gallium nitride epitaxial layer are arranged sequentially from bottom to top. A p-type metal electrode is arranged on the upper surface of the p-type gallium nitride epitaxial layer. An n-type electrode is arranged on a lower platform surface of the n-type gallium nitride epitaxial layer. The multiple quantum well active area comprises 5-20 indium gallium nitride potential well layers which are arranged at intervals from bottom to top. A first kind composite potential barrier layer is arranged between every two indium gallium nitride potential barrier layers. A second kind composite potential well layer is arranged on the upper surface of an indium gallium nitride potential well layer at the top layer. According to the composite potential barrier, at the contact position of an aluminum, gallium and indium nitride layer and an InGaN potential well layer, a built-in electric field which is produced due to a polarization effect can be decreased through adjustment of aluminum (Al) and indium (In). On a contact interface between an AlInGaN layer and a GaN layer, a ratio between the Al and the In is adjusted to be 0.83:0.17, and lattices of the Al and the In are enabled to be matched.
Description
Technical field
The invention belongs to field of semiconductor illumination, relate to a kind of gallium nitride based LED with composite potential barrier.
Background technology
GaN base LED has come into the market and has obtained remarkable progress, but the low problem of chip light-emitting efficiency is solved not yet very well.Reason is: there is polarity effect in iii-v nitride light-emitting element, comprise piezoelectricity and spontaneous polarization.Spontaneous polarization is asymmetric the causing of wurtzite structure in [0001] direction, and piezoelectric polarization Producing reason is at heterojunction boundary place, due between different materials each other lattice do not mate generation stress, anion and cationic arrangement are moved, caused by the piezoelectric effect producing polarization charge.Built-in polarized electric field caused by polarity effect is highfield, serious band curvature distortion is caused in quantum well inside, electronics is spatially separated to some extent with the wave function in hole, thus the charge carrier spontaneous emission rate reduced in quantum well, make the internal quantum efficiency of device low, also limit luminous efficiency simultaneously.
The gallium nitride based LED of current main flow generally all adopts InGaN/GaN Multiple Quantum Well as luminescent active region, and polarity effect wherein must be paid attention to.Adopt quaternary nitride AlInGaN can introduce suitable tensile strain and compressive strain as required, to reach the object reducing polarity effect.The spontaneous polarization constant of AlN is maximum, and InN takes second place, and GaN is minimum.According to the theory of the people such as Fiorentini, the spontaneous polarization strength of certain material is added with piezoelectric polarization intensity, be exactly total its polarization intensity obtained.
The spontaneous polarization strength P of ternary nitride material
spcan be represented by the formula with the relation of component:
P
sp(Al
xGa
1-xN)=-0.090x-0.034(1-x)+0.019x(1-x)
(1)
P
sp(In
xGa
1-xN)=-0.042x-0.034(1-x)+0.038x(1-x)
(2)
P
sp(Al
xIn
1-xN)=-0.090x-0.042(1-x)+0.071x(1-x)
(3)
The spontaneous polarization strength of quaternary nitride AlInGaN is:
P
ps(Al
xIn
yGa
1-x-yN)=P
ps(AlN)x+P
ps(InN)y+P
ps(GaN)(1-x-y)，
(4)
And the piezoelectric polarization intensity P of AlInGaN, AlInN, InGaN and AlGaN
pzfollowing formula can be utilized to calculate:
P
pz(Al
xIn
yGa
1-x-yN)=P
pz(AlN)x+P
pz(InN)y+P
pz(GaN)(1-x-y)，
(5)
Wherein
P
pz(AlN)=-1.808 +5.624
2as <0,
(6)
P
pz(AlN)=-1.808-7.888
2as >0,
(7)
P
pz(GaN)=-0.918□+9.541□
2,
(8)
P
pz(InN)=-1.373□+7.559□
2,
(9)
P
total=P
ps+P
pz
(10)
Wherein is lattice mismatch.When the In component of InGaN potential well layer is determined, we can obtain suitable composite potential barrier layer InAlGaN and the In of InGaN interface according to above-mentioned formula, Al component, makes the polarization intensity of InGaN layer and AlInGaN layer match, and can reduce the polarity effect in InGaN quantum well thus.
Although use AlInGaN to reduce polarity effect, thus the internal electric field that reduction polarity effect causes, but when using AlInGaN to replace traditional GaN potential barrier, the component of Al and In is that the In component in InGaN potential well layer calculates gained, so still may retain certain lattice mismatch between AlInGaN and InGaN when determining.On the other hand, we need the problem of the lattice mismatch solving the interface that AlInGaN layer contacts with GaN layer simultaneously.When the Al component in this interface adjustment AlInGaN and the ratio of In component are 0.83:0.17, AlInGaN and GaN Lattice Matching, is conducive to reducing the dislocation density that lattice mismatch produces.
Summary of the invention
Technical problem: the invention provides a kind of light-emitting diode with composite potential barrier improving luminous efficiency.
Technical scheme: the gallium nitride based light emitting diode with composite potential barrier of the present invention, comprise the Sapphire Substrate set gradually from bottom to up, resilient coating, N-shaped epitaxial layer of gallium nitride, multi-quantum well active region, p-type aluminum gallium nitride epitaxial loayer and p-type epitaxial layer of gallium nitride, p-type epitaxial layer of gallium nitride upper surface is provided with type-p metal electrode, the upper surface of n-type gallium nitride layer etches stepped table top, stepped table top comprises a upper table surface and is positioned at the following table of upper table surface side, upper table surface is connected with the bottom surface of multi-quantum well active region, following table is provided with a n-type electrode, it is characterized in that, multi-quantum well active region comprises 5 ~ 20 spaced InGaN potential well layers from bottom to up, be provided with between two adjacent InGaN potential well layers by the first aluminium gallium nitride alloy indium layer connected successively from bottom to up, the first kind composite potential barrier layer that gallium nitride layer and the second aluminium gallium nitride alloy indium layer are formed, the upper surface of the InGaN potential well layer of top layer is provided with the Equations of The Second Kind composite potential barrier layer be made up of the first aluminium gallium nitride alloy indium layer connected from bottom to up and gallium nitride layer.
In first kind composite potential barrier of the present invention and Equations of The Second Kind composite potential barrier, the lower surface of the first aluminium gallium nitride alloy indium layer and the upper surface of the second aluminium gallium nitride alloy indium layer, the component of aluminium and indium, all according to the In component in InGaN potential well layer, obtains according to compound semiconductor band theory and polarized electric field theory calculate; At the upper surface of the first aluminium gallium nitride alloy indium layer and the lower surface of the second aluminium gallium nitride alloy indium layer, the ratio regulating al composition and indium component is 0.83:0.17, makes it to mate with gallium nitride crystal lattice.In InGaN potential well layer, the molar percentage scope of In component is 0 ~ 40%.
In first kind composite potential barrier layer of the present invention and Equations of The Second Kind composite potential barrier, the thickness of the first aluminium gallium nitride alloy indium layer and the second aluminium gallium nitride alloy indium layer is 4-8nm, and the thickness of gallium nitride layer is 4-8nm.
In the present invention, the energy gap of the first aluminium gallium nitride alloy indium layer and the second aluminium gallium nitride alloy indium layer is greater than the energy gap of InGaN potential well layer, i.e. E
g(AlInGaN) >E
g(InGaN).
Of the present invention have in the light-emitting diode of composite potential barrier, and the first kind composite potential barrier in multi-quantum well active region is made up of AlInGaN-GaN-AlInGaN tri-layers of epitaxial loayer, and Equations of The Second Kind composite potential barrier is made up of the two-layer epitaxial loayer of AlInGaN-GaN.In composite potential barrier, the component of Al and In of the interface contacted with InGaN potential well layer by regulating AlInGaN layer reduces the internal electric field because polarity effect produces, wherein the component of Al and In can, according to the In component in InGaN potential well layer, utilize formula (1) ~ (12) to calculate; And in the interface that AlInGaN layer contacts with GaN layer, the ratio regulating Al component and In component is 0.83:0.17, to make the Lattice Matching of AlInGaN layer and GaN layer.As can be seen here, Al and the In component in the AlInGaN layer in composite potential barrier is change.Wherein, in InGaN potential well layer, the molar percentage scope of In component is 0 ~ 40%.
There is in the present invention the gallium nitride based LED of composite potential barrier, the Al of the interface that AlInGaN layer contacts with potential well layer InGaN, In component parameter in its composite potential barrier, and the Al of interface that AlInGaN layer contacts with GaN layer, In component parameter is inconsistent in the ordinary course of things.In epitaxial process, the component of In and Al is organize interface parameter from a class boundary face Parameters variation to next with the form of alternation in AlInGaN layer.
The gallium nitride based LED with composite potential barrier in the present invention, its multiple quantum well active layer is formed by the InGaN potential well layer in 5-20 cycle and first kind composite potential barrier layer AlInGaN-GaN-AlInGaN alternate epitaxial growth.
The gallium nitride based LED with composite potential barrier in the present invention, the composite potential barrier in its last cycle is only made up of Equations of The Second Kind composite potential barrier AlInGaN-GaN.
The energy gap of the AlInGaN in composite potential barrier provided by the invention must be greater than the energy gap of InGaN potential well, i.e. E
g(AlInGaN) >E
g(InGaN).Energy gap can be expressed from the next:
T
ij(u)＝u·E
g,j+(1-u)·E
g,i+bowing
ij·u·(1-u)
（12）
Wherein, subscript 1,2,3 representation compound AlN (E respectively in above-mentioned formula
g=6.20eV), InN (E
g=0.7eV) and GaN (E
g=3.4eV), and z=1-x-y; The bowing(warpage of InGaN, AlGaN and AlInN) coefficient is set to 2.8eV, 0.7eV and 2.4eV respectively.
According to above-mentioned formula 1 ~ 12, choose suitable In, Al component value, at guarantee E
g(AlInGaN) >E
g(InGaN), when, the effect reducing polarity effect between trap base can be obtained.
In AlInGaN-GaN-AlInGaN and AlInGaN-GaN composite potential barrier provided by the invention, by changing the Al component of AlInGaN layer and the proportioning of In component that contact with potential well layer InGaN layer, the polarity effect in quantum well can be suppressed, reduce internal electric field, wherein the component of Al and according to the In component in InGaN potential well, can be calculated by above-mentioned formula 1 ~ 12.On the other hand, the Al component of the AlInGaN interface contacted with GaN layer and the ratio of In component are adjusted to 0.83:0.17, and now AlInGaN and GaN Lattice Matching, can reduce the dislocation density in LED epitaxial loayer, improves the light extraction efficiency of LED.In addition, the Carrier Profile adopting composite potential barrier to be also conducive in Multiple Quantum Well is more even, can significantly improve the combined efficiency of charge carrier, improve the performance of LED further.
Beneficial effect: the present invention compared with prior art, has the following advantages:
One, there is the situation of polarity effect and lattice mismatch in the InGaN/GaN quantum well that traditional gallium nitride based LED adopts.The invention provides a kind of gallium nitride based LED with composite potential barrier, in its composite potential barrier, in the interface that AlInGaN layer contacts with InGaN potential well layer, by regulating the component of Al and In to suppress polarity effect, the internal electric field that polarity effect causes can be reduced.
Two, in composite potential barrier, in the interface that AlInGaN layer contacts with GaN layer, the ratio regulating Al component and In component is 0.83:0.17, can eliminate the lattice mismatch of AlInGaN layer and GaN layer, effectively can reduce the dislocation density in crystal.
Three, use the composite potential barrier Carrier Profile be also conducive in quantum well to obtain more even, the combined efficiency of charge carrier can be significantly improved, improve the performance of LED further.
The present invention uses composite potential barrier in the multi-quantum well active region of LED.In AlInGaN layer, the interface contacted with InGaN potential well layer, reduce the internal electric field because polarity effect produces by the component of adjustment Al and In, wherein the component of Al and In can obtain according to the In calculation in InGaN potential well; And on the interface that AlInGaN layer contacts with GaN layer, the ratio regulating Al component and In component is 0.83:0.17, makes AlInGaN and GaN Lattice Matching, the dislocation density in crystal can be reduced.In addition, the Carrier Profile using composite potential barrier to be also conducive in Multiple Quantum Well is more even, can significantly improve the combined efficiency of charge carrier, improve the performance of LED further.
Accompanying drawing explanation
Fig. 1 is the LED structure schematic diagram with composite potential barrier;
Fig. 2 is LED structure schematic diagram that is traditional, that have InGaN/GaN Multiple Quantum Well;
Fig. 3 is the single quantum well schematic diagram with first kind composite potential barrier layer;
Fig. 4 is the structural representation of n-type gallium nitride layer 3.
Have in figure: Sapphire Substrate 1, resilient coating 2, N-shaped epitaxial layer of gallium nitride 3, upper table surface 31, following table 32, n-type electrode 4, multi-quantum well active region 5, InGaN potential well layer 51, first aluminium gallium nitride alloy indium layer 52, gallium nitride layer 53, second aluminium gallium nitride alloy indium layer 54, p-type aluminum gallium nitride epitaxial loayer 6, p-type epitaxial layer of gallium nitride 7, p-type electrode 8.
Embodiment
Below in conjunction with embodiment and Figure of description, the present invention is done into detailed description.
Embodiment 1:
Suppose the In of following gallium nitride based LED
uga
1-uin component u=0.2 in N potential well layer 51.
The gallium nitride based LED construction schematic diagram with composite potential barrier of the present invention is shown in Fig. 1.The structural element of this kind of LED comprises: Sapphire Substrate 1, resilient coating 2, N-shaped epitaxial layer of gallium nitride 3, n-type electrode 4, multi-quantum well active region 5, InGaN potential well layer 51, first aluminium gallium nitride alloy indium layer 52, gallium nitride layer 53, second aluminium gallium nitride alloy indium layer 54, p-type aluminum gallium nitride epitaxial loayer 6, p-type epitaxial layer of gallium nitride 7, p-type electrode 8.
Figure 3 shows that the single quantum well schematic diagram of the first kind composite potential barrier layer with AlInGaN-GaN-AlInGaN, comprise In
0.2ga
0.8n InGaN potential well layer 51, first aluminium gallium nitride alloy indium layer 52, at the first aluminium gallium nitride alloy indium layer 52 and In
0.2ga
0.8the interface that N gallium indium nitride layer 51 contacts, according to In
0.2ga
0.8in component (0.2) in N gallium indium nitride layer 51 and formula 1 ~ 12 can be calculated: as the Al of interface
xin
yga
1-x-ywhen in N first aluminium gallium nitride alloy indium layer 52, Al component and In component are respectively x=0.23 and y=0.25, the internal electric field that the polarity effect in quantum well causes is minimum.On the other hand, in the interface that the first aluminium gallium nitride alloy indium layer 52 contacts with gallium nitride layer 53, the ratio regulating Al component and In component is 0.83:0.17, now Lattice Matching between the first aluminium gallium nitride alloy indium layer 52 and gallium nitride layer 53, and can calculate: Al
xin
yga
1-x-yal component x=0.19 in N first aluminium gallium nitride alloy indium layer 52 layers, In component y=0.04.Therefore mean in the actual growth course of first kind composite potential barrier layer, the Al component in the first aluminium gallium nitride alloy indium layer 52 is decremented to 0.19 from 0.23, and In component is decremented to 0.04 from 0.25.Continued growth second aluminium gallium nitride alloy indium layer 54 after growth one deck gallium nitride layer 53.In the interface that the second aluminium gallium nitride alloy indium layer 54 contacts with gallium nitride layer 53, the same ratio regulating Al component and In component is 0.83:0.17, now Al
xin
yga
1-x-ylattice Matching between N second aluminium gallium nitride alloy indium layer 54 and gallium nitride layer 53, and can calculate equally: Al
xin
yga
1-x-yal component x=0.19 in N second aluminium gallium nitride alloy indium layer 54, In component y=0.04.At Al
xin
yga
1-x-yn second aluminium gallium nitride alloy indium layer 54 and next In
0.2ga
0.8the interface of N InGaN potential well layer 51 contact, also can calculate according to formula 1 ~ 12: Al
xin
yga
1-x-yal component x=0.23 in N second aluminium gallium nitride alloy indium layer 54, In component y=0.25.That is, in actual growth course, the Al component in the second aluminium gallium nitride alloy indium layer 54 is incremented to 0.23, In component from 0.19 and is incremented to 0.25 from 0.04.So move in circles 5 ~ 20 cycles, the Equations of The Second Kind composite potential barrier for being only made up of the first aluminium gallium nitride alloy indium layer 52 and gallium nitride layer 53 in last cycle, can obtain the gallium nitride based LED construction with composite potential barrier provided by the invention.
In Equations of The Second Kind composite potential barrier of the present invention, the lower surface of aluminum indium gallium nitride, the component of aluminium and indium according to the In component in InGaN potential well layer, can obtain according to compound semiconductor band theory and polarized electric field theory calculate; The upper surface of aluminum indium gallium nitride, the ratio regulating al composition and indium component is 0.83:0.17, makes it to mate with gallium nitride crystal lattice.Al and In component in two-layer AlInGaN layer in composite potential barrier is change, and in described InGaN potential well layer, the molar percentage scope of In component is 0 ~ 40%.
These are only better embodiment of the present invention.Protection scope of the present invention is not limited with above-mentioned execution mode, as long as those of ordinary skill in the art modifies or change according to the equivalence that disclosed content is done, all should include in protection range described in claims.
Claims (4)
1. one kind has the gallium nitride based light emitting diode of composite potential barrier, comprise the Sapphire Substrate (1) set gradually from bottom to up, resilient coating (2), N-shaped epitaxial layer of gallium nitride (3), multi-quantum well active region (5), p-type aluminum gallium nitride epitaxial loayer (6) and p-type epitaxial layer of gallium nitride (7), described p-type epitaxial layer of gallium nitride (7) upper surface is provided with type-p metal electrode (8), the upper surface of described n-type gallium nitride layer (3) etches stepped table top, described stepped table top comprises a upper table surface (31) and is positioned at the following table (32) of upper table surface (31) side, described upper table surface (31) is connected with the bottom surface of multi-quantum well active region (5), described following table (32) is provided with a n-type electrode (4), it is characterized in that, described multi-quantum well active region (5) comprises 5 ~ 20 spaced InGaN potential well layers (51) from bottom to up, be provided with between two adjacent InGaN potential well layers (51) by the first aluminium gallium nitride alloy indium layer (52) connected successively from bottom to up, the first kind composite potential barrier layer that gallium nitride layer (53) and the second aluminium gallium nitride alloy indium layer (54) are formed, the upper surface of the InGaN potential well layer (51) of top layer is provided with the Equations of The Second Kind composite potential barrier layer be made up of the first aluminium gallium nitride alloy indium layer (52) connected from bottom to up and gallium nitride layer (53).
2. the gallium nitride based light emitting diode with composite potential barrier according to claim 1, it is characterized in that, in described first kind composite potential barrier and Equations of The Second Kind composite potential barrier, the lower surface of the first aluminium gallium nitride alloy indium layer (52) and the upper surface of the second aluminium gallium nitride alloy indium layer (54), the component of aluminium and indium, all according to the In component in InGaN potential well layer (51), obtains according to compound semiconductor band theory and polarized electric field theory calculate; At the upper surface of the first aluminium gallium nitride alloy indium layer (52) and the lower surface of the second aluminium gallium nitride alloy indium layer (54), the ratio regulating al composition and indium component is 0.83:0.17, make it to mate with gallium nitride crystal lattice, in described InGaN potential well layer (51), the molar percentage scope of In component is 0 ~ 40%.
3. the gallium nitride based light emitting diode with composite potential barrier according to claim 1, it is characterized in that, in described first kind composite potential barrier layer and Equations of The Second Kind composite potential barrier, the thickness of the first aluminium gallium nitride alloy indium layer (52) and the second aluminium gallium nitride alloy indium layer (54) is 4-8nm, and the thickness of gallium nitride layer (53) is 4-8nm.
4. the gallium nitride based light emitting diode with composite potential barrier according to claim 1, is characterized in that, the energy gap of described first aluminium gallium nitride alloy indium layer (52) and the second aluminium gallium nitride alloy indium layer (54) is greater than the energy gap of InGaN potential well layer, i.e. E
g(AlInGaN) >E
g(InGaN).
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| CN102544281A (en) * | 2012-01-20 | 2012-07-04 | 厦门市三安光电科技有限公司 | Gallium nitride-based LED with multi-layer potential barrier structure |
| CN102760808A (en) * | 2012-07-12 | 2012-10-31 | 华灿光电股份有限公司 | Epitaxial wafer of light-emitting diode (LED) and making method of epitaxial wafer |
| CN102820392A (en) * | 2012-08-31 | 2012-12-12 | 华灿光电股份有限公司 | Epitaxial wafer of light-emitting diode and manufacturing method thereof |
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