CN1753196A - N type contact layer structure of gallium nitride multiple quantum trap luminous diode - Google Patents
N type contact layer structure of gallium nitride multiple quantum trap luminous diode Download PDFInfo
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- CN1753196A CN1753196A CNA2004100783455A CN200410078345A CN1753196A CN 1753196 A CN1753196 A CN 1753196A CN A2004100783455 A CNA2004100783455 A CN A2004100783455A CN 200410078345 A CN200410078345 A CN 200410078345A CN 1753196 A CN1753196 A CN 1753196A
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- 229910002601 GaN Inorganic materials 0.000 title claims description 124
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims description 123
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 45
- 229910052738 indium Inorganic materials 0.000 claims abstract description 31
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 26
- 239000000203 mixture Substances 0.000 claims abstract description 26
- 239000013078 crystal Substances 0.000 claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 64
- 229910052710 silicon Inorganic materials 0.000 claims description 64
- 239000010703 silicon Substances 0.000 claims description 64
- 239000004411 aluminium Substances 0.000 claims description 44
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 43
- 239000000956 alloy Substances 0.000 claims description 42
- 229910045601 alloy Inorganic materials 0.000 claims description 42
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 30
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 claims description 29
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 25
- 238000000576 coating method Methods 0.000 claims description 16
- 239000011248 coating agent Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 claims description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- -1 magnesium aluminum indium Chemical compound 0.000 claims 2
- 238000005336 cracking Methods 0.000 abstract 1
- 239000012528 membrane Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 description 8
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910020068 MgAl Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical compound [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000032696 parturition Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 201000007094 prostatitis Diseases 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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Abstract
The invention advances a structure of n-type contact layer for GaN multiple quantum well LED, where the n-type contact layer is a superlattice structure combined of two different-composition AlGaNs, and it can obtain a high-doping concentration (>1x10 to the power 19 cm to the power -3), low-resistance n-type GaN contact layer. In addition, it can by twos obtain matching- lattice constant crystal membranes by mixing of Al, In and Ga, but can not cause the cracking of the n-type contact layer by heavy doping, thus improving the quality of heavy-doped contact layer and reducing the difficulty in making n-type Ohm contact, and then able to largely reduce the operating voltage of the whole GaN multiple quantum well LED.
Description
Technical field
The present invention is relevant gallium nitride multiple quantum trap luminous diode, the structure of the low-resistance n type contact layer in the particularly relevant gallium nitride multiple quantum trap luminous diode.
Background technology
Because gallium nitride (GaN) light-emitting diode can reach required energy gap (Band Gap) by the composition of control material, therefore can produce various coloured light, especially need the blue light or the purple-light LED of high energy gap.Therefore the correlation technique of gallium nitride light-emitting diode becomes the actively emphasis of research and development of industry.
A kind of luminescent layer of known gallium nitride light-emitting diode mainly is with gallium nitride and InGaN In
xGa
1-xN, (0≤x≤1) is that (Multi-quantum Well, MQW) structure utilize electronics and electric hole at In to a multiple quantum trap of well (Potential Well)
xGa
1-xN (0≤x≤1) position well in conjunction with and discharge photon.Under this luminescent layer, generally be to adopt the n type gallium nitride contact layer that n type doping (for example, silicon) is arranged.
For making this n type gallium nitride contact layer reach low-resistance requirement, generally be to adopt doped with high concentration (＞1 * 10
19Cm
-3) silicon (Si) make n type gallium nitride contact layer.But find that in actual manufacture process n type gallium nitride contact layer tends to because of the heavily doped result of silicon, do not form excessive stress, cause easily giving birth to be full of cracks, even the phenomenon of fracture because lattice matches.These phenomenons not only influence the quality bills of materials of n type gallium nitride contact layer, also can be increased in the difficulty that next step is made n type Ohm contact electrode in the processing procedure above n type gallium nitride contact layer.These shortcomings make the gallium nitride multiple quantum trap luminous diode produce whole electric properties deteriorate or conduct electricity badly, even become waste product.Influence in one's power, these gallium nitride multiple quantum trap luminous diodes need higher operating voltage on the one hand, and the electrical power of consumption increases when making running, are the acceptance rate decline of making on the other hand, and production cost improves.
In addition, silicon heavy doping also forms point defect (Pin Hole) easily in the result of n type gallium nitride contact layer, makes the whole diode characteristic variation of gallium nitride multiple quantum trap luminous diode, and has the generation of leakage current in operation.
Summary of the invention
Therefore, in order to overcome the defective of above-mentioned prior art, the present invention proposes the structure of several n type gallium nitride contact layers, to solve foregoing problems.
The invention provides a kind of n type contact layer structure of gallium nitride multiple quantum trap luminous diode, this gallium nitride multiple quantum trap luminous diode comprises respectively from going up order down:
Substrate is by alumina single crystal, 6H-SiC, 4H-SiC, Si, ZnO, GaAs, spinelle (MgAl
2O
4) approach nitride-based semiconductor with lattice constant one of monocrystalline oxide made;
Be positioned at a side of this substrate and by aluminum indium gallium nitride Al with specific composition
1-a-bGa
aIn
bThe resilient coating that N constituted, 0≤a, b＜1, a+b≤1;
Be positioned at this n type contact layer on this resilient coating;
Be positioned on this n type contact layer, cover this n type contact layer partly the surface, by luminescent layer that InGaN constituted;
In this luminescent layer the same side and be positioned at the negative electrode of this n type contact layer surface on not being capped partly;
Be positioned on this luminescent layer, by there being magnesium to mix, have the aluminum indium gallium nitride Al of a specific composition
1-c-dGa
cIn
dThe p type coating that N constituted, 0≤c, d＜1, c+d≤1;
Be positioned on this p type coating, by there being magnesium to mix, have the aluminum indium gallium nitride Al of another specific composition
1-e-fGa
eIn
fThe p type contact layer that N constituted, 0≤e, f＜1, e+f≤1; And
Be positioned on this p type contact layer, cover the partly positive electrode on p type contact layer surface,
Wherein, this n type contact layer is first basic unit that is constituted by first number of plies altogether, by n type III group-III nitride, with second number of plies altogether, by the formed superlattice structure of the mutual stack of second basic unit of n type III group-III nitride, the energy gap of this second basic unit is high than this first basic unit, its bottom is one of this first basic unit and this second basic unit, and its superiors are one of this first basic unit and this second basic unit.
The present invention forms different Al for two kinds by combination
mIn
nGa
1-m-nN and Al
pIn
qGa
1-p-qN (0≤m, n＜1; 0＜p, q＜1; M+n＜1; P+q≤1; The formed superlattice structure of m＜p) can obtain high-dopant concentration (＞1 * 10
19Cm
-3) and low-resistance n type gallium nitride contact layer.In addition, utilize each allotment formed of aluminium, indium, gallium can obtain the epitaxial that lattice constant in twos is complementary, do not chap and can not cause in the internal cause silicon heavy doping of n type gallium nitride contact layer, improve the quality of heavy blended gallium nitride contact layer, and reduce the difficulty that n type ohmic contact is made, and then can reduce the operating voltage of whole gallium nitride multiple quantum trap luminous diode greatly.
Below in conjunction with accompanying drawing, embodiment describe above-mentioned and other purpose and advantage of the present invention in detail down.
Description of drawings
Fig. 1 is lattice constant and the energy gap that shows the III-nitride material.
Fig. 2 is the structural representation according to the gallium nitride multiple quantum trap luminous diode of first embodiment of the invention.
Fig. 3 is the structural representation according to the gallium nitride multiple quantum trap luminous diode of second embodiment of the invention.
Fig. 4 is the structural representation according to the gallium nitride multiple quantum trap luminous diode of third embodiment of the invention.
Fig. 5 is the structural representation according to the gallium nitride multiple quantum trap luminous diode of fourth embodiment of the invention.Among≤the figure
10 substrates
20 resilient coatings
30 n type contact layers
40 negative electrodes
42 luminescent layers
50 p type coatings
60 p type contact layers
70 electrodes
301 have the gallium nitride based layer of silicon doping
302 have the aluminium gallium nitride alloy basic unit of silicon doping
Embodiment
Technical conceive of the present invention can be known to disclose by Fig. 1.Fig. 1 is lattice constant (Lattice Constant) and the energy gap that shows the III-nitride material.As shown in Figure 1, the lattice constant a0 of GaN (gallium nitride) is about 3.18 .Extend up and down by its lattice match line, can find to have the Al of specific composition
xIn
yGa
1-x-yN (aluminum indium nitride gallium, 0≤x, y＜1, x+y≤1) has identical lattice constant and higher energy gap.
Fig. 2 is the structural representation according to the gallium nitride multiple quantum trap luminous diode of first embodiment of the invention.The structure of known gallium nitride light-emitting diode as shown in Figure 2, generally be that alumina single crystal (Sapphire) or carborundum (6H-SiC or 4H-SiC) with C-Plane or R-Plane or A-Plane is substrate 10, other material that can be used for substrate also comprises Si, ZnO, GaAs or spinelle (MgAl
2O
4), or lattice constant approaches the monocrystalline oxide of nitride-based semiconductor.Then, this structure comprises resilient coating 20 in a side of substrate 10, and this resilient coating 20 is by the aluminum indium gallium nitride Al with specific composition
1-a-bGa
aIn
bN (0≤a, b＜1, a+b≤1) constitutes.On this resilient coating 20, this structure comprises n type contact layer (contact layer) 30, and the structure of this n type contact layer 30 promptly is focus of the present invention place.Be to cover the partly luminescent layer (active layer) 42 on n type contact layer 30 surfaces on this n type contact layer 30, this luminescent layer 42 is made of InGaN (InGaN).In addition, on the part that is not capped in this luminescent layer the same side and on these n type contact layer 30 surfaces, this structure also comprises negative electrode 40.
On this luminescent layer 42, this structural order piles up from lower to upper, comprises p type coating (cladding layer) 50, p type contact layer 60 respectively and covers the partly positive electrode 70 on p type contact layer 60 surfaces.The p type coating 50 that is positioned on the active luminescent layer is by there being magnesium to mix (Mg-doped), have the aluminum indium gallium nitride Al of a specific composition
1-c-dGa
cIn
dN constitutes, 0≤c, d＜1, c+d≤1.Be positioned at 60 of p type contact layers on the p type coating 50 by there being magnesium to mix, have the aluminum indium gallium nitride Al of another specific composition
1-e-fGa
eIn
fN constitutes, 0≤e, f＜1, e+f≤1.
As shown in Figure 2, the n type contact layer 30 of this embodiment is by multilayer, superlattice (Supperlattice) structures that the gallium nitride based layer 301 of silicon doping arranged and have the mutual stack of aluminium gallium nitride alloy basic unit 302 of silicon doping to be constituted, wherein has the energy gap of aluminium gallium nitride alloy basic unit 302 of silicon doping bigger than the energy gap of the gallium nitride based layer 301 that silicon doping is arranged.More particularly, n type contact layer 30 is to have stack one deck on the gallium nitride based layer 301 of silicon doping that the aluminium gallium nitride alloy basic unit 302 of silicon doping is arranged at one deck, and the one deck that superposes again on it has the gallium nitride based layer 301 of silicon doping, by that analogy.Perhaps, n type contact layer 30 is to have stack one deck in the aluminium gallium nitride alloy basic unit 302 of silicon doping that the gallium nitride based layer 301 of silicon doping is arranged at one deck, and the one deck that superposes again on it has the aluminium gallium nitride alloy basic unit 302 of silicon doping, by that analogy.The thickness of each gallium nitride based layer needn't be identical, but all between 20 ～200 , the growth temperature is between 600 ℃～1200 ℃.Each aluminium gallium nitride alloy Al
1-gGa
gThe composition of N (0＜g＜1) basic unit (that is, the parameter g in the molecular formula of prostatitis) needn't be identical, and thickness needn't be identical, but all between 20 ～200 , the growth temperature is also between 600 ℃～1200 ℃.N type contact layer 30 gross thickness comprise 50～500 layers of gallium nitride based layer 301 and aluminium gallium nitride alloy basic unit 302 altogether between 2～5 μ m, the silicon doping concentration that wherein has one deck (no matter being gallium nitride based layer 301 or aluminium gallium nitride alloy basic unit 302) at least is greater than 1 * 10
19Cm
-3Gallium nitride based layer 301 is one with the number of plies of aluminium gallium nitride alloy basic unit 302 difference identical or its number of plies.
Fig. 3 is the structural representation according to the gallium nitride multiple quantum trap luminous diode of second embodiment of the invention.As shown in Figure 3, the structure of this embodiment and first embodiment are identical, and unique difference is the material difference that n type contact layer 32 is adopted.The n type contact layer 32 of this embodiment is by multilayer, the common gallium nitride based layer 321 of mixing of indium and silicon is arranged and indium is arranged the superlattice structures that constituted with the common aluminium gallium nitride alloy basic unit of mixing of silicon 322 mutual stacks, and the energy gap of the gallium nitride based layer 321 of doping is big jointly than indium and silicon are arranged for the energy gap that the common aluminium gallium nitride alloy basic unit 322 of mixing of indium and silicon wherein arranged.More particularly, n type contact layer 32 ties up to one deck the aluminium gallium nitride alloy basic unit 322 that stack one deck has indium and silicon to mix jointly on indium and the common gallium nitride based layer 321 of mixing of silicon, the one deck that superposes again on it has indium and the common gallium nitride based layer 321 of mixing of silicon, by that analogy.Perhaps, n type contact layer 32 ties up to the gallium nitride based layer 321 that one deck has in indium and the common aluminium gallium nitride alloy basic unit 322 of mixing of silicon, stack one deck has indium and the common doping of silicon, and the one deck that superposes again on it has indium and the common aluminium gallium nitride alloy basic unit 322 of mixing of silicon, by that analogy.The thickness of each gallium nitride based layer needn't be identical, but all between 20 ～200 , the growth temperature is between 600 ℃～1200 ℃.The composition of each aluminium gallium nitride alloy basic unit needn't be identical, and thickness needn't be identical, but all between 20 ～200 , the growth temperature is also between 600 ℃～1200 ℃.N type contact layer 32 gross thickness comprise 50～500 layers of gallium nitride based layer 321 and aluminium gallium nitride alloy basic unit 322 altogether between 2～5 μ m, wherein have the indium of one deck (no matter being gallium nitride based layer 321 or aluminium gallium nitride alloy basic unit 322) and silicon doping concentration at least greater than 1 * 10
19Cm
-3Gallium nitride based layer 321 is one with the number of plies of aluminium gallium nitride alloy basic unit 322 difference identical or its number of plies.
Fig. 4 is the structural representation according to the gallium nitride multiple quantum trap luminous diode of third embodiment of the invention.As shown in Figure 4, the structure of this embodiment and first and second embodiment are identical, and unique difference is the material difference that n type contact layer 34 is adopted.The n type contact layer 34 of this embodiment is by multilayer, the common aluminium gallium nitride alloy basic unit 341 of mixing of indium and silicon is arranged and indium is arranged the superlattice structures that constituted with the common aluminium gallium nitride alloy basic unit of mixing of silicon 342 mutual stacks, and the energy gap of the aluminium gallium nitride alloy basic unit 341 of doping is big jointly than indium and silicon are arranged for the energy gap that the common aluminium gallium nitride alloy basic unit 342 of mixing of indium and silicon wherein arranged.More particularly, n type contact layer 34 is at one deck the aluminium gallium nitride alloy basic unit 342 that stack one deck has indium and silicon to mix jointly in indium and the common aluminium gallium nitride alloy basic unit 341 of mixing of silicon to be arranged, the one deck that superposes again on it has indium and the common aluminium gallium nitride alloy basic unit 341 of mixing of silicon, by that analogy.Perhaps, n type contact layer 34 is at one deck the aluminium gallium nitride alloy basic unit 341 that stack one deck has indium and silicon to mix jointly in indium and the common aluminium gallium nitride alloy basic unit 342 of mixing of silicon to be arranged, and the one deck that superposes again on it has indium and the common aluminium gallium nitride alloy basic unit 342 of mixing of silicon, by that analogy.The thickness of each aluminium gallium nitride alloy layer needn't be identical, but all between 20 ～200 , the growth temperature is between 600 ℃～1200 ℃.The composition of adjacent aluminium gallium nitride alloy basic unit is inequality, but the composition of non-conterminous aluminium gallium nitride alloy basic unit can be identical, also can be inequality, and each layer thickness needn't be identical, but all between 20 ～200 , the growth temperature is also between 600 ℃～1200 ℃.N type contact layer 34 gross thickness are between 2～5 μ m, comprise 50～500 layers of aluminium gallium nitride alloy basic unit 341 and aluminium gallium nitride alloy basic unit 342 altogether, wherein have the indium of one deck (no matter being aluminium gallium nitride alloy basic unit 341 or aluminium gallium nitride alloy basic unit 342) and silicon doping concentration at least greater than 1 * 10
19Cm
-3Aluminium gallium nitride alloy basic unit 341 is one with the number of plies of aluminium gallium nitride alloy basic unit 342 difference identical or its number of plies.
Fig. 5 is the structural representation according to the gallium nitride multiple quantum trap luminous diode of fourth embodiment of the invention.As shown in Figure 5, structure and the previous embodiment of this embodiment are identical, and unique difference is the material difference that n type contact layer 36 is adopted.The n type contact layer 36 of this embodiment is by multilayer, the superlattice structures that the aluminum indium nitride gallium basic unit 361 of silicon doping arranged and have the mutual stack of aluminum indium nitride gallium basic unit 362 of silicon doping to be constituted, wherein has the energy gap of aluminum indium nitride gallium basic unit 362 of silicon doping bigger than the energy gap of the aluminum indium nitride gallium basic unit 361 that silicon doping is arranged.More particularly, n type contact layer 36 ties up to one deck has stack one deck in the aluminum indium nitride gallium basic unit 361 of silicon doping that the aluminum indium nitride gallium basic unit 362 of silicon doping is arranged, and the one deck that superposes again on it has the aluminum indium nitride gallium basic unit 361 of silicon doping, by that analogy.Perhaps, n type contact layer 36 is to have stack one deck in the aluminum indium nitride gallium basic unit 362 of silicon doping that the aluminum indium nitride gallium basic unit 361 of silicon doping is arranged at one deck, and the one deck that superposes again on it has the aluminum indium nitride gallium basic unit 362 of silicon doping, by that analogy.The thickness of each aluminum indium nitride gallium basic unit needn't be identical, but all between 20 ～200 , the growth temperature is between 600 ℃～1200 ℃.The composition of adjacent aluminum indium nitride gallium basic unit is inequality, but the composition of non-conterminous aluminum indium nitride gallium layer can be identical, also can be inequality, and each layer thickness needn't be identical, but all between 20 ～200 , the growth temperature is also between 600 ℃～1200 ℃.N type contact layer 36 gross thickness are between 2～5 μ m, comprise 50～500 layers of aluminum indium nitride gallium basic unit 361 and aluminum indium nitride gallium basic unit 362 altogether, the silicon doping concentration that wherein has one deck (no matter being aluminum indium nitride gallium basic unit 361 or aluminum indium nitride gallium basic unit 362) at least is greater than 1 * 10
19Cm
-3Aluminum indium nitride gallium basic unit 361 is one with the number of plies of aluminum indium nitride gallium basic unit 362 difference identical or its number of plies.
In this embodiment, form different aluminum indium nitride gallium Al by making up two kinds
mIn
nGa
1-m-nN and Al
pIn
qGa
1-p-qN (0≤m, n＜1; 0＜p, q＜1; M+n＜1; P+q≤1; M＜p) formed superlattice structure can obtain high-dopant concentration (＞1 * 10
19Cm
-3) and low-resistance n type gallium nitride contact layer.In addition, utilize each allotment formed of aluminium, indium, gallium can obtain the epitaxial that lattice constant in twos is complementary, do not chap and can not cause in the internal cause silicon heavy doping of n type gallium nitride contact layer, improve the quality of heavy blended gallium nitride contact layer, and reduce the difficulty that n type ohmic contact is made, and then can reduce the operating voltage of whole gallium nitride multiple quantum trap luminous diode greatly.
Foregoing only is preferred embodiment of the present invention, should not limit scope of the invention process with this, and every equalization of doing according to scope of the present invention changes with revising and all should belong in the scope that the present invention contains.
Claims (12)
1. the n type contact layer structure of a gallium nitride multiple quantum trap luminous diode, this gallium nitride multiple quantum trap luminous diode comprises respectively from going up order down:
Substrate, one of monocrystalline oxide that is approached nitride-based semiconductor by alumina single crystal, 6H-SiC, 4H-SiC, Si, ZnO, GaAs, spinelle and lattice constant is made;
Be positioned at a side of this substrate and by aluminum indium gallium nitride Al with specific composition
1-a-bGa
aIn
bThe resilient coating that N constituted, 0≤a, b＜1, a+b≤1;
Be positioned at this n type contact layer on this resilient coating;
Be positioned on this n type contact layer, cover this n type contact layer partly the surface, by luminescent layer that InGaN constituted;
In this luminescent layer the same side and be positioned at the negative electrode of this n type contact layer surface on not being capped partly;
Be positioned on this luminescent layer, by magnesium aluminum indium gallium nitride Al that mix, that have a specific composition is arranged
1-c-dGa
cIn
dThe p type coating that N constituted, 0≤c, d＜1, c+d≤1;
Be positioned on this p type coating, by magnesium aluminum indium gallium nitride Al that mix, that have another specific composition is arranged
1-e-fGa
eIn
fThe p type contact layer that N constituted, 0≤e, f＜1, e+f≤1; And
Be positioned on this p type contact layer, cover the partly positive electrode on p type contact layer surface,
Wherein, this n type contact layer is first basic unit that is constituted by first number of plies altogether, by n type III group-III nitride, with second number of plies altogether, by the formed superlattice structure of the mutual stack of second basic unit of n type III group-III nitride, the energy gap of this second basic unit is high than this first basic unit, its bottom is one of this first basic unit and this second basic unit, and its superiors are one of this first basic unit and this second basic unit.
2. according to the n type contact layer structure of the described gallium nitride multiple quantum trap luminous diode of claim 1, it is characterized in that this n type contact layer thickness is between 2～5 μ m.
3. according to the n type contact layer structure of the described gallium nitride multiple quantum trap luminous diode of claim 1, it is characterized in that this first number of plies and this second number of plies sum are between 50～500, the difference of this first number of plies and this second number of plies is not more than one.
4. according to the n type contact layer structure of the described gallium nitride multiple quantum trap luminous diode of claim 1, each layer that it is characterized in that this first basic unit and second basic unit respectively has the independent thickness between 20 ～200 .
5. according to the n type contact layer structure of the described gallium nitride multiple quantum trap luminous diode of claim 1, it is characterized in that, this each layer of first basic unit is made of the gallium nitride that the silicon doping of concentration is separately arranged, and this each layer of second basic unit is by constituting by the silicon doping of concentration separately and by the aluminium gallium nitride alloy that composition is separately formed.
6. according to the n type contact layer structure of the described gallium nitride multiple quantum trap luminous diode of claim 5, it is characterized in that having the silicon doping concentration of a basic unit at least greater than 1 * 10 in this first basic unit and this second basic unit
19Cm
-3
7. according to the n type contact layer structure of the described gallium nitride multiple quantum trap luminous diode of claim 1, it is characterized in that, this each layer of first basic unit is that the indium of concentration and the gallium nitride of silicon doping are constituted by having separately, and this each layer of second basic unit is by constituting by the indium of concentration separately and silicon doping and by the aluminium gallium nitride alloy that composition is separately formed.
8. according to the n type contact layer structure of the described gallium nitride multiple quantum trap luminous diode of claim 7, it is characterized in that having at least in this first basic unit and this second basic unit indium of a basic unit and silicon doping concentration greater than 1 * 10
19Cm
-3
9. according to the n type contact layer structure of the described gallium nitride multiple quantum trap luminous diode of claim 1, it is characterized in that, this each layer of first basic unit is by being constituted by the indium of concentration separately and silicon doping and by the aluminium gallium nitride alloy that composition is separately formed, and this each layer of second basic unit is by constituting by the indium of concentration separately and silicon doping and by the aluminium gallium nitride alloy that composition is separately formed.
10. according to the n type contact layer structure of the described gallium nitride multiple quantum trap luminous diode of claim 9, it is characterized in that having the indium of a basic unit and silicon doping concentration in this first basic unit and this second basic unit at least greater than 1 * 10
19Cm
-3
11. n type contact layer structure according to the described gallium nitride multiple quantum trap luminous diode of claim 1, it is characterized in that, this each layer of first basic unit is by being sent out silicon doping and be made of the aluminum indium nitride gallium that composition is separately formed by concentration separately, this each layer of second basic unit is by constituting by the silicon doping of concentration separately and by the aluminum indium nitride gallium that composition is separately formed.
12. the n type contact layer structure according to the described gallium nitride multiple quantum trap luminous diode of claim 11 is characterized in that having the silicon doping concentration of a basic unit at least greater than 1 * 10 in this first basic unit and this second basic unit
19Cm
-3
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100424839C (en) * | 2006-07-21 | 2008-10-08 | 中国电子科技集团公司第五十五研究所 | Method for producing heavy blended gallium nitride field effect transistor |
| CN101578736B (en) * | 2007-07-18 | 2013-02-27 | 株式会社村田制作所 | Wireless ic device |
| CN103151435A (en) * | 2013-01-30 | 2013-06-12 | 东南大学 | Gallium nitride base light-emitting diode with composite potential barrier |
| CN107278333A (en) * | 2015-02-25 | 2017-10-20 | Lg 伊诺特有限公司 | Luminescent device and the lamp unit with luminescent device |
| CN107924966A (en) * | 2014-09-22 | 2018-04-17 | 夏普株式会社 | Nitride semiconductor luminescent element |
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Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1017113B1 (en) * | 1997-01-09 | 2012-08-22 | Nichia Corporation | Nitride semiconductor device |
| AU747260B2 (en) * | 1997-07-25 | 2002-05-09 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
| KR100683234B1 (en) * | 1998-03-12 | 2007-02-15 | 니치아 카가쿠 고교 가부시키가이샤 | Nitride semiconductor device |
| US6712478B2 (en) * | 2001-01-19 | 2004-03-30 | South Epitaxy Corporation | Light emitting diode |
| JP5236847B2 (en) * | 2001-08-10 | 2013-07-17 | 克巳 岸野 | II-VI group compound semiconductor crystal and photoelectric conversion functional device |
| CN1280923C (en) * | 2002-09-29 | 2006-10-18 | 璨圆光电股份有限公司 | LED structure with low resistivity layer |
-
2004
- 2004-09-23 CN CNB2004100783455A patent/CN100418237C/en not_active Expired - Lifetime
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100424839C (en) * | 2006-07-21 | 2008-10-08 | 中国电子科技集团公司第五十五研究所 | Method for producing heavy blended gallium nitride field effect transistor |
| CN101578736B (en) * | 2007-07-18 | 2013-02-27 | 株式会社村田制作所 | Wireless ic device |
| CN103151435A (en) * | 2013-01-30 | 2013-06-12 | 东南大学 | Gallium nitride base light-emitting diode with composite potential barrier |
| CN103151435B (en) * | 2013-01-30 | 2015-05-06 | 东南大学 | Gallium nitride base light-emitting diode with composite potential barrier |
| CN107924966A (en) * | 2014-09-22 | 2018-04-17 | 夏普株式会社 | Nitride semiconductor luminescent element |
| CN107278333A (en) * | 2015-02-25 | 2017-10-20 | Lg 伊诺特有限公司 | Luminescent device and the lamp unit with luminescent device |
| US10381509B2 (en) | 2015-02-25 | 2019-08-13 | Lg Innotek Co., Ltd. | Light emitting device and light unit having same |
| CN112786745A (en) * | 2020-12-30 | 2021-05-11 | 华灿光电（浙江）有限公司 | Epitaxial wafer of light emitting diode and preparation method thereof |
| CN112786745B (en) * | 2020-12-30 | 2022-04-15 | 华灿光电（浙江）有限公司 | Epitaxial wafer of light emitting diode and preparation method thereof |
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