CN1747185A - LED structure - Google Patents

LED structure Download PDF

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Publication number
CN1747185A
CN1747185A CNA2004100739274A CN200410073927A CN1747185A CN 1747185 A CN1747185 A CN 1747185A CN A2004100739274 A CNA2004100739274 A CN A2004100739274A CN 200410073927 A CN200410073927 A CN 200410073927A CN 1747185 A CN1747185 A CN 1747185A
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layer
gallium nitride
basic unit
nial
emitting diode
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CN100369276C (en
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涂如钦
武良文
游正璋
温子稷
简奉任
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Bright circle Au Optronics Co
LUMENS Limited by Share Ltd
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Formosa Epitaxy Inc
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Abstract

The invention includes baseboard, double buffering layer, N type GaN layer, short cycle super lattice digital contact layer, active luminous layer, P type coated layer, and contact layer. When the thick GaN contact layer with high doping concentration and low resistance is made by using the invention, crazing and din holes phenomena can not occur in thick GaN layer.

Description

Light-emitting diode structure
Technical field
The present invention relates to light-emitting diode structure, particularly have the LED structure with gallium nitride system of the gallium nitride based contact layer of low-resistance thick n type.
Background technology
(multiquantumwell, MQW) light-emitting diode are to utilize n type gallium nitride (GaN) as n type-contact layer (Contacting layer) to known techniques InGaN/gallium nitride (InGaN/GaN) multiple quantum well structure.If but want to utilize high-dopant concentration (n＞1 * 10 19Cm -3) silicon, make low-resistance thick n type gallium nitride contact layer, in actual manufacture process, find, in gallium nitride layer inside, tend to cause easily taking place be full of cracks or even the phenomenon of fracture because of the heavily doped result of silicon (Si).These phenomenons not only influence the quality bills of materials of gallium nitride layer, and because be full of cracks or even the phenomenon of fracture, be increased in a step thereafter, the side makes the difficulty of n type Ohm contact electrode layer thereon, makes the whole electric properties deteriorate or the bad waste product that becomes that conducts electricity.Influence will increase the operating voltage of whole element in one's power, and the electrical power that consumes when making running increases, or the yield of making (yield) descends, and increases production cost.In addition, silicon (Si) heavy doping (n＞1 * 10 19Cm -3) in the result of thick n type gallium nitride contact layer, also form point defect (pin hole) easily, on element operation, have leakage current generating and make whole diode characteristic variation.Therefore, in order to overcome above-mentioned defective, we need a kind of new structure to solve the problem that the front is disclosed.
Summary of the invention
The known techniques gallium nitride that discloses at the front is the problem of multiple quantum well structure light-emitting diode, and primary and foremost purpose of the present invention provides a kind of structure with GaN series LED of short period superlattice numeral contact layer.
Another object of the present invention is in making high-dopant concentration (n＞1 * 10 19Cm -3) and low-resistance thick n type gallium nitride contact layer the time, but known techniques can not take place in thick n type gallium nitride layer, chap easily or phenomenon of rupture because of heavily doped silicon, be maintained the quality of heavy blended gallium nitride contact layer, it is by the aluminum indium gallium nitride (n of short period heavily doped silicon ++-Al 1-x-yGa xIn yN) form superlattice structure, for having short period superlattice numeral contact layer, with as the n type contact layer (Contacting layer) of low-resistance value in InGaN/gallium nitride multiple quantum trap structure light-emitting diode (InGaN/GaN MQW LEDs).
Another object of the present invention provides step thereafter, makes the simplicity of n type Ohm contact electrode layer, and makes whole electrical characteristics improve, and reduces the operating voltage of integral member, and the electrical power that consumes during its running lowers, and improves and produce yield.
Purpose of the present invention and plurality of advantages will reach with reference to appended accompanying drawing, and be disclosed fully by the detailed description of following specific embodiment.
Description of drawings
Fig. 1 is first embodiment of the LED structure with gallium nitride system according to the present invention.
Fig. 2 is the short period superlattice numeral contact layer schematic diagram of LED structure with gallium nitride system first embodiment according to the present invention.
Fig. 3 is second embodiment of the LED structure with gallium nitride system according to the present invention.
Fig. 4 is the short period superlattice numeral contact layer schematic diagram of LED structure with gallium nitride system second embodiment according to the present invention.
Among the figure
11 substrates, 12 double buffer layers
121 first resilient coatings, 122 second resilient coatings
13 n type gallium nitride layers, 14 short period superlattices numeral contact layer
141 basal layers, 1,411 first basic units
1,412 second basic units, 15 active luminescent layers
16 p type coatings, 17 contact layers
18 electrode layers, 21 substrates
22 double buffer layers, 221 first resilient coatings
222 second resilient coatings, 23 n type gallium nitride layers
24 short period superlattices numeral contact layer, 240 basal layers
2,402 second basic units of 2,401 first basic units
25 active luminescent layer 26 p type coatings
27 contact layers, 28 electrode layers
Embodiment
Fig. 1 is first embodiment of the LED structure with gallium nitride system according to the present invention.First embodiment of LED structure with gallium nitride system of the present invention, it comprises: substrate 11, double buffer layer (double buffer layer) 12, n type gallium nitride (GaN) layer 13, short period superlattice numeral contact layer 14, active luminescent layer 15, p type coating 16, and contact layer 17.
The material of substrate 11 is alumina single crystal (Sapphire).Be positioned at the double buffer layer 12 on the substrate 11, it comprises: first resilient coating (first buffer layer) 121 and second resilient coating (secondbuffer layer) 122.Be positioned at first resilient coating 121 on the substrate 11, material is aluminum indium gallium nitride (Al 1-x-yGa xIn yN), 0≤X＜1,0≤Y＜1 wherein.Be positioned at second resilient coating 122 on first resilient coating 121, material is silicon nitride (SiN).N type gallium nitride (GaN) layer 13 is positioned on the double buffer layer 12.
Fig. 2 is that gallium nitride is the short period superlattice numeral contact layer schematic diagram of light emitting diode construction first embodiment according to the present invention.Be positioned at the short period superlattice numeral contact layer 14 on n type gallium nitride (GaN) layer 13, it comprises: be positioned at a plurality of basal layers 141 on n type gallium nitride (GaN) layer 13, can repeat to fold mutually, generally speaking, its folded mutually number is no less than 5.Basal layer 141 comprises: first basic unit 1411 and second basic unit 1412.First basic unit 1411, its material is the heavily doped n type of silicon (Si) aluminum indium gallium nitride (n ++-Al 1-x-yGa xIn yN), heavy dopant concentration is not less than every cubic centimeter 10 19Individual (n＞1 * 10 19Cm -3), and 0≤X＜1,0≤Y＜1 wherein.To 50 dusts, spend to 1200 degree between Celsius 600 by formation temperature between 5 dusts for the thickness of first basic unit 1411.Be positioned at second basic unit 1412 in first basic unit 1411, its material is silicon nitride (SiN).To 10 dusts, spend to 1200 degree between Celsius 600 by formation temperature between 2 dusts for the thickness of second basic unit 1412.Therefore, first basic unit 1411 can the position at n type gallium nitride (GaN) layer 13 or through repeating the phase poststack, the position is in second basic unit 1412.
Be positioned at the active luminescent layer 15 on the short period superlattice numeral contact layer 14, its material is InGaN (InGaN).Be positioned at the p type coating 16 on the active luminescent layer 15, its material is magnesium doping (Mg-doped) aluminum indium gallium nitride (Al 1-x-yGa xIn yN), 0≤X＜1,0≤Y＜1 wherein.Be positioned at the contact layer 17 on the p type coating 16, its material is magnesium doping (Mg-doped) p type aluminum indium gallium nitride (Al 1-x-yGa xIn yN), 0≤X＜1,0≤Y＜1 wherein.
First embodiment of LED structure with gallium nitride system of the present invention comprises electrode layer 18 further, and it is positioned on contact layer 17 or the short period superlattice numeral contact layer 14, and it can form the good ohmic contact.Electrode layer 18 comprises Ti/Al, Cr/Au, Cr/Al, Cr/Pt/Au, Ti/Pt/Au, Cr/Pd/Au, Ti/Pd/Au, Ti/Al/Ti/Au, Ti/Al/Pt/Au, Ti/Al/Ni/Au, Ti/Al/Pd/Au, Ti/Al/Cr/Au, Ti/Al/Co/Au, Cr/Al/Cr/Au, Cr/Al/Pt/Au, Cr/Al/Pd/Au, Cr/Al/Ti/Au, Cr/Al/Co/Au, Cr/Al/Ni/Au, Pd/Al/Ti/Au, Pd/Al/Pt/Au, Pd/Al/Ni/Au, Pd/Al/Pd/Au, Pd/Al/Cr/Au, Pd/Al/Co/Au, Nd/Al/Pt/Au, Nd/Al/Ti/Au, Nd/Al/Ni/Au, Nd/Al/Cr/Au, Nd/Al/Co/Au, Hf/Al/Ti/Au, Hf/AI/Pt/Au, Hf/Al/Ni/Au, Hf/Al/Pd/Au, Hf/Al/Cr/Au, Hf/Al/Co/Au, Zr/Al/Ti/Au, Zr/Al/Pt/Au, Zr/Al/Ni/Au, Zr/Al/Pd/Au, Zr/Al/Cr/Au, Zr/Al/Co/Au, TiNx/Ti/Au, TiNx/Pt/Au, TiNx/Ni/Au, TiNx/Pd/Au, TiNx/Cr/Au, TiNx/Co/Au, TiWNx/Ti/Au, TiWNx/Pt/Au, TiWNx/Ni/Au, TiWNx/Pd/Au, TiWNx/Cr/Au, TiWNx/Co/Au, NiAl/Pt/Au, NiAl/Cr/Au, NiAl/Ni/Au, NiAl/Ti/Au, Ti/NiAl/Pt/Au, Ti/NiAl/Ti/Au, Ti/NiAl/Ni/Au, Ti/NiAl/Cr/Au, or the compound of any other above-mentioned material formation.
Fig. 3 is second embodiment of the LED structure with gallium nitride system according to the present invention.Second embodiment of LED structure with gallium nitride system of the present invention, it comprises: substrate 21, double buffer layer (double buffer layer) 22, n type gallium nitride (GaN) layer 23, short period superlattice numeral contact layer 24, active luminescent layer 25, p type coating 26, and contact layer 27.
The material of substrate 21 is alumina single crystal (Sapphire).Be positioned at the double buffer layer (double buffer layer) 22 on the substrate 21, comprise: first resilient coating (first buffer layer), 221 and second resilient coating (second buffer layer) 222.Be positioned at first resilient coating (firstbuffer layer) 221 on the substrate 21, its material is aluminum indium gallium nitride (Al 1-x-yGa xIn yN), 0≤X＜1,0≤Y＜1 wherein.Be positioned at second resilient coating (second buffer layer) 222 of first resilient coating 221, its material is silicon nitride (SiN).N type gallium nitride (GaN) layer 23 is to be positioned on the double buffer layer 22.
Fig. 4 is the short period superlattice numeral contact layer schematic diagram of LED structure with gallium nitride system second embodiment according to the present invention.Be positioned at the short period superlattice numeral contact layer 24 on n type gallium nitride (GaN) layer 23, comprise: be positioned at a plurality of basal layers 240 on n type gallium nitride (GaN) layer 23.Basal layer 240 can repeat folded mutually, and generally speaking, its folded mutually number is no less than 5.Basal layer 240 comprises: first basic unit 2401, and with second basic unit 2402.First basic unit 2401, its material is silicon (Si) heavy doping n type aluminum indium gallium nitride (n ++-Al 1-x-yGa xIn yN), 0≤X＜1,0≤Y＜1 wherein.The heavy dopant concentration of first basic unit 2401 is not less than every cubic centimeter 10 19Individual (n＞1 * 10 19Cm -3).The thickness of first basic unit 2401 between 5 dusts to 50 dusts.The formation temperature of first basic unit 2401 is spent to 1200 degree between Celsius 600.
Be positioned at second basic unit 2402 in first basic unit 2401, its material is (undoped) InGaN (In that do not mix uGa uN), 0≤u＜1 wherein.The thickness of second basic unit 2402 between 5 dusts to 50 dusts.The formation temperature of second basic unit 2402 is spent to 1200 degree between Celsius 600.First basic unit 2401 can the position on n type gallium nitride (GaN) layer 23, or through repeating the phase poststack, the position is in second basic unit 2402.
Be positioned at active luminescent layer 25 on the short period superlattice numeral contact layer 24, its material is InGaN (InGaN).Be positioned at the p type coating 26 on the active luminescent layer 25, its material is magnesium doping (Mg-doped) aluminum indium gallium nitride (Al 1-x-yGa xIn yN), 0≤X＜1,0≤Y＜1 wherein.Be positioned at the contact layer 27 on the p type coating 26, its material is magnesium doping (Mg-doped) p type aluminum indium gallium nitride (Al 1-x-yGa xIn yN), 0≤X＜1,0≤Y＜1 wherein.
Second embodiment of LED structure with gallium nitride system of the present invention comprises electrode layer 28 further, and it can be positioned on contact layer 27 or the short period superlattice numeral contact layer 24, and it can form the good ohmic contact.Electrode layer 28 comprises Ti/Al, Cr/Au, Cr/Al, Cr/Pt/Au, Ti/Pt/Au, Cr/Pd/Au, Ti/Pd/Au, Ti/Al/Ti/Au, Ti/Al/Pt/Au, Ti/Al/Ni/Au, Ti/Al/Pd/Au, Ti/Al/Cr/Au, Ti/Al/Co/Au, Cr/Al/Cr/Au, Cr/Al/Pt/Au, Cr/Al/Pd/Au, Cr/Al/Ti/Au, Cr/Al/Co/Au, Cr/Al/Ni/Au, Pd/Al/Ti/Au, Pd/Al/Pt/Au, Pd/Al/Ni/Au, Pd/Al/Pd/Au, Pd/Al/Cr/Au, Pd/Al/Co/Au, Nd/Al/Pt/Au, Nd/Al/Ti/Au, Nd/Al/Ni/Au, Nd/Al/Cr/Au, Nd/Al/Co/Au, Hf/Al/Ti/Au, Hf/AI/Pt/Au, Hf/Al/Ni/Au, Hf/Al/Pd/Au, Hf/Al/Cr/Au, Hf/Al/Co/Au, Zr/Al/Ti/Au, Zr/Al/Pt/Au, Zr/Al/Ni/Au, Zr/Al/Pd/Au, Zr/Al/Cr/Au, Zr/Al/Co/Au, TiNx/Ti/Au, TiNx/Pt/Au, TiNx/Ni/Au, TiNx/Pd/Au, TiNx/Cr/Au, TiNx/Co/Au, TiWNx/Ti/Au, TiWNx/Pt/Au, TiWNx/Ni/Au, TiWNx/Pd/Au, TiWNx/Cr/Au, TiWNx/Co/Au, NiAl/Pt/Au, NiAl/Cr/Au, NiAl/Ni/Au, NiAl/Ti/Au, Ti/NiAl/Pt/Au, Ti/NiAl/Ti/Au, Ti/NiAl/Ni/Au, Ti/NiAl/Cr/Au, or the compound of any other above-mentioned material formation.
The above is preferred embodiment of the present invention only, is not in order to limiting claim of the present invention, and any other do not break away from disclosed spirit and change or the modification finished, all should be included in the claim of the present invention.

Claims (18)

1. a LED structure with gallium nitride system is characterized in that, comprises:
One substrate, its material are alumina single crystal (Sapphire);
One dual resilient coating (double buffer layer) is positioned on this substrate, and it comprises:
One first resilient coating (first buffer layer), its material is aluminum indium gallium nitride (Al 1-x-yGa xIn yN), wherein 0≤X＜1,0≤Y＜1 is positioned on this substrate;
One second resilient coating (second buffer layer), its material is silicon nitride (SiN), is positioned on this first resilient coating;
One n type gallium nitride (GaN) layer is to be positioned on this double buffer layer;
One short period superlattice numeral contact layer is to be positioned on this n type gallium nitride (GaN) layer, and it comprises:
A plurality of basal layers are to be positioned on this n type gallium nitride (GaN) layer, and this basal layer comprises:
One first basic unit, its material is the heavily doped n type of silicon (Si) aluminum indium gallium nitride (n ++-Al 1-x-yGa xIn yN), 0≤X＜1,0≤Y＜1 wherein; And
One second basic unit is positioned in this first basic unit, and its material is silicon nitride (SiN);
One active luminescent layer, its material are InGaN (InGaN), are to be positioned on this short period superlattice numeral contact layer;
One p type coating, its material are magnesium doping (Mg-doped) aluminum indium gallium nitride (Al 1-x-yGa xIn yN), 0≤X＜1,0≤Y＜1 wherein, and be positioned on this activity luminescent layer; And
One contact layer, its material are magnesium doping (Mg-doped) p type aluminum indium gallium nitride (Al 1-x-yGa xIn yN), wherein 0≤X＜1,0≤Y＜1 is to be positioned on this p type coating.
2. light emitting diode construction according to claim 1 is characterized in that, this first basic unit can the position in this n type gallium nitride (GaN) layer or this second basic unit.
3. light emitting diode construction according to claim 1 is characterized in that, the thickness of this first basic unit between 5 dusts to 50 dusts.
4. light emitting diode construction according to claim 1 is characterized in that, the formation temperature of this first basic unit is spent to 1200 degree between Celsius 600.
5. light emitting diode construction according to claim 1 is characterized in that, the heavy dopant concentration of this first basic unit is not less than every cubic centimeter 10 19Individual (n＞1 * 10 19Cm -3).
6. light emitting diode construction according to claim 1 is characterized in that, the thickness of this second basic unit between 2 dusts to 10 dusts.
7. light emitting diode construction according to claim 1 is characterized in that, the formation temperature of this second basic unit is spent to 1200 degree between Celsius 600.
8. light emitting diode construction according to claim 1 is characterized in that the number of this basal layer is no less than 5.
9. light emitting diode construction according to claim 1 is characterized in that, comprises an electrode layer further, it is positioned on this contact layer or this short period superlattice numeral contact layer, and it can form the good ohmic contact, and this electrode layer comprises Ti/Al, Cr/Au, Cr/Al, Cr/Pt/Au, Ti/Pt/Au, Cr/Pd/Au, Ti/Pf/Au, Ti/Al/Ti/Au, Ti/Al/Pt/Au, Ti/Al/Ni/Au, Ti/Al/Pd/Au, Ti/Al/Cr/Au, Ti/Al/Co/Au, Cr/Al/Cr/Au, Cr/Al/Pt/Au, Cr/Al/Pd/Au, Cr/Al/Ti/Au, Cr/Al/Co/Au, Cr/Al/Ni/Au, Pd/Al/Ti/Au, Pd/Al/Pt/Au, Pd/Al/Ni/Au, Pd/Al/Pd/Au, Pd/Al/Cr/Au, Pd/Al/Co/Au, Nd/Al/Pt/Au, Nd/Al/Ti/Au, Nd/Al/Ni/Au, Nd/Al/Cr/Au, Nd/Al/Co/Au, Hf/Al/Ti/Au, Hf/Al/Pt/Au, Hf/Al/Ni/Au, Hf/Al/Pd/Au, Hf/Al/Cr/Au, Hf/Al/Co/Au, Zr/Al/Ti/Au, Zr/Al/Pt/Au, Zr/Al/Ni/Au, Zr/Al/Pd/Au, Zr/Al/Cr/Au, Zr/Al/Co/Au, TiNx/Ti/Au, TiNx/Pt/Au, TiNx/Ni/Au, TiNx/Pd/Au, TiNx/Cr/Au, TiNx/Co/Au, TiWNx/Ti/Au, TiWNx/Pt/Au, TiWNx/Ni/Au, TiWNx/Pd/Au, TiWNx/Cr/Au, TiWNx/Co/Au, NiAl/Pt/Au, NiAl/Cr/Au, NiAl/Ni/Au, NiAl/Ti/Au, Ti/NiAl/Pt/Au, Ti/NiAl/Ti/Au, Ti/NiAl/Ni/Au, Ti/NiAl/Cr/Au, or the compound of any other above-mentioned material formation.
10. a gallium nitride is a light emitting diode construction, it is characterized in that it comprises:
One substrate, its material are alumina single crystal (Sapphire);
One dual resilient coating (double buffer layer) is positioned on this substrate, and it comprises:
One first resilient coating (first buffer layer), its material is aluminum indium gallium nitride (Al 1-x-yGa xIn yN), wherein 0≤X＜1,0≤Y＜1 is positioned on this substrate;
One second resilient coating (second buffer layer), its material is silicon nitride (SiN), is positioned on this first resilient coating;
One n type gallium nitride (GaN) layer is to be positioned on this double buffer layer;
One short period superlattice numeral contact layer is to be positioned on this n type gallium nitride (GaN) layer, and it comprises:
A plurality of basal layers are to be positioned on this n type gallium nitride (GaN) layer, and this basal layer comprises: one
First basic unit, its material is silicon (Si) heavy doping n type aluminum indium gallium nitride (n ++-Al 1-x-yGa xIn yN),
0≤X＜1,0≤Y＜1 wherein; And
One second basic unit is positioned in this first basic unit, and its material is (undoped) InGaN (In that do not mix uGa uN), 0≤u＜1 wherein;
One active luminescent layer, its material are InGaN (InGaN), are to be positioned on this short period superlattice numeral contact layer;
One p type coating, its material are magnesium doping (Mg-doped) aluminum indium gallium nitride (Al 1-x-yGa xIn yN), 0≤X＜1,0≤Y＜1 wherein, and be positioned on this activity luminescent layer; And
One contact layer, its material are magnesium doping (Mg-doped) p type aluminum indium gallium nitride (Al 1-x-yGa xIn yN), wherein 0≤X＜1,0≤Y＜1 is to be positioned on this p type coating.
11. light emitting diode construction according to claim 10 is characterized in that, this first basic unit can the position in this n type gallium nitride (GaN) layer or this second basic unit.
12. light emitting diode construction according to claim 10 is characterized in that, the thickness of this first basic unit between 5 dusts to 50 dusts.
13. light emitting diode construction according to claim 10 is characterized in that, the formation temperature of this first basic unit is spent to 1200 degree between Celsius 600.
14. light emitting diode construction according to claim 10 is characterized in that, the heavy dopant concentration of this first basic unit is not less than every cubic centimeter 10 19Individual (n＞1 * 10 19Cm -3).
15. light emitting diode construction according to claim 10 is characterized in that, the thickness of this second basic unit between 5 dusts to 50 dusts.
16. light emitting diode construction according to claim 10 is characterized in that, the formation temperature of this second basic unit is spent to 1200 degree between Celsius 600.
17. light emitting diode construction according to claim 10 is characterized in that, the number of this basal layer is no less than 5.
18. light emitting diode construction according to claim 10 is characterized in that, comprises an electrode layer further, it is positioned on this contact layer or this short period superlattice numeral contact layer, and it can form the good ohmic contact, and this electrode layer comprises Ti/Al, Cr/Au, Cr/Al, Cr/Pt/Au, Ti/Pt/Au, Cr/Pd/Au, Ti/Pd/Au, Ti/Al/Ti/Au, Ti/Al/Pt/Au, Ti/Al/Ni/Au, Ti/Al/Pd/Au, Ti/Al/Cr/Au, Ti/Al/Co/Au, Cr/Al/Cr/Au, Cr/Al/Pt/Au, Cr/Al/Pd/Au, Cr/Al/Ti/Au, Cr/Al/Co/Au, Cr/Al/Ni/Au, Pd/Al/Ti/Au, Pd/Al/Pt/Au, Pd/Al/Ni/Au, Pd/Al/Pd/Au, Pd/Al/Cr/Au, Pd/Al/Co/Au, Nd/Al/Pt/Au, Nd/Al/Ti/Au, Nd/Al/Ni/Au, Nd/Al/Cr/Au, Nd/Al/Co/Au, Hf/Al/Ti/Au, Hf/AI/Pt/Au, Hf/Al/Ni/Au, Hf/Al/Pd/Au, Hf/Al/Cr/Au, Hf/Al/Co/Au, Zr/Al/Ti/Au, Zr/Al/Pt/Au, Zr/Al/Ni/Au, Zr/Al/Pd/Au, Zr/Al/Cr/Au, Zr/Al/Co/Au, TiNx/Ti/Au, TiNx/Pt/Au, TiNx/Ni/Au, TiNx/Pd/Au, TiNx/Cr/Au, TiNx/Co/Au, TiWNx/Ti/Au, TiWNx/Pt/Au, TiWNx/Ni/Au, TiWNx/Pd/Au, TiWNx/Cr/Au, TiWNx/Co/Au, NiAl/Pt/Au, NiAl/Cr/Au, NiAl/Ni/Au, NiAl/Ti/Au, Ti/NiAl/Pt/Au, Ti/NiAl/Ti/Au, Ti/NiAl/Ni/Au, Ti/NiAl/Cr/Au, or the compound of any other above-mentioned material formation.
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Family Cites Families (3)

* Cited by examiner, † Cited by third party
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Publication number Priority date Publication date Assignee Title
CN101140977B (en) * 2006-09-08 2010-04-14 夏普株式会社 Nitride semiconductor light-emitting element and method of manufacturing the same
US8835938B2 (en) 2006-09-08 2014-09-16 Sharp Kabushiki Kaisha Nitride semiconductor light-emitting element and method of manufacturing the same
CN100514775C (en) * 2006-09-20 2009-07-15 中国科学院半导体研究所 A method for making GaN base laser tube core
CN102217103A (en) * 2008-10-24 2011-10-12 艾比维利股份有限公司 Group iii nitride semiconductor light emitting device
CN101740654B (en) * 2008-11-19 2011-12-07 中国科学院半导体研究所 Semiconductor p-i-n junction solar battery epitaxial wafer and preparation method thereof
CN102782883A (en) * 2010-01-05 2012-11-14 首尔Opto仪器股份有限公司 Light-emitting diode and method for manufacturing same
CN102782883B (en) * 2010-01-05 2015-07-29 首尔伟傲世有限公司 Light-emitting diode and manufacture method thereof
CN102751406A (en) * 2011-04-20 2012-10-24 亚威朗集团有限公司 Light-emitting device with low forward voltage and method for fabricating the same
CN104272430A (en) * 2012-04-26 2015-01-07 欧司朗光电半导体有限公司 Epitaxy substrate, method for producing an epitaxy substrate and optoelectronic semiconductor chip comprising an epitaxy substrate
US9484490B2 (en) 2012-04-26 2016-11-01 Osram Opto Semiconductors Gmbh Epitaxy substrate, method for producing an epitaxy substrate and optoelectronic semiconductor chip comprising an epitaxy substrate
CN103361719A (en) * 2013-07-05 2013-10-23 华灿光电股份有限公司 Method for growing gallium nitride epitaxial layer on buffer layer
CN103361719B (en) * 2013-07-05 2016-08-10 华灿光电股份有限公司 A kind of method of the epitaxial layer of growing gallium nitride on the buffer layer
US9048389B2 (en) 2013-09-23 2015-06-02 Industrial Technology Research Institute Light emitting diode
WO2016165558A1 (en) * 2015-04-15 2016-10-20 厦门市三安光电科技有限公司 Nitride light emitting diode structure and preparation method thereof
US9929308B2 (en) 2015-04-15 2018-03-27 Xiamen Sanan Optoelectronics Technology Co., Ltd. Nitride light emitting diode and fabrication method thereof
WO2017092450A1 (en) * 2015-11-30 2017-06-08 天津三安光电有限公司 Light-emitting diode epitaxial wafer structure and preparation method thereof
CN105679898A (en) * 2016-01-25 2016-06-15 山东浪潮华光光电子股份有限公司 LED epitaxial structure with warpage adjusting structure layer and growth method thereof
CN117239027A (en) * 2023-11-15 2023-12-15 江西兆驰半导体有限公司 LED epitaxial wafer, preparation method thereof and LED
CN117239027B (en) * 2023-11-15 2024-02-02 江西兆驰半导体有限公司 LED epitaxial wafer, preparation method thereof and LED

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