CN1134849C - Light emitting diode - Google Patents
Light emitting diode Download PDFInfo
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- CN1134849C CN1134849C CNB991191536A CN99119153A CN1134849C CN 1134849 C CN1134849 C CN 1134849C CN B991191536 A CNB991191536 A CN B991191536A CN 99119153 A CN99119153 A CN 99119153A CN 1134849 C CN1134849 C CN 1134849C
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Abstract
The present invention relates to a light emitting diode. A crystal grain of the light emitting diode comprises an oblong insulating substrate, and a gallium nitride crystal growing layer, a gallium nitride buffering layer, an n type gallium nitride contact layer, an n type aluminum nitride gallium binding layer, an indium nitride gallium light emitting layer with multiple quantum wells, a p type aluminum nitride gallium binding layer, a p type gallium nitride contact layer and a transparent tin indium nitride conducting layer are orderly formed on the insulating substrate. A part of the layers are removed in an etching mode to exposed a part of the p type gallium nitride contact layer to form a front p type Ti/Al electrode, and the front electrode is in contact with the transparent conducting layer. The light emitting diode is etched to the n type gallium nitride contact layer to form a back n type Ti/Al electrode on the n type gallium nitride contact layer, and the two electrodes are arranged in the longitudinal direction of the surface of the oblong crystal grain in parallel.
Description
Technical field
The present invention relates to a kind of light-emitting diode, especially a kind of light-emitting diode with less chip area.
Background technology
The application of light-emitting diode is rather extensive, for example, can be applicable to optical display, traffic sign, traffic signals sign, data memory device, communicator, lighting device and medical treatment device.In this technical field, one of important topic of technical staff is the size that how to reduce light-emitting diode chip for backlight unit at present, makes from the wafer of preliminary dimension, can cut evil and go out more chip, thereby can reach the cost that reduces light-emitting diode chip for backlight unit.In addition, the size of diode chip for backlight unit is littler, when being used in several this kind diodes in an array device, more can provide higher resolution.
At present on the market, making light-emitting diode generally is to make dielectric substrate with sapphire, form gallium nitride-based III-V group compound semiconductor thereon, constitute light-emitting diode, for example, United States Patent (USP) the 5th by people such as Nakamura application, disclosed a kind of gallium nitride-based III-V group compound semiconductor in 652, No. 434, P type electrode wherein and N type electrode, all be disposed on the diagonal of its square light-emitting area, still there is the space that can reduce in its chip size.
Summary of the invention
Main purpose of the present invention is to provide a kind of light-emitting diode that higher resolution is provided, and less chip size can be provided, thereby can reduce the cost of the first chip of light-emitting diodes.
According to the present invention, a kind of light-emitting diode is provided, comprising: a rectangle dielectric substrate, a gallium nitride semiconductor lamination, Al
xGa
1-xN semiconductor bond course, wherein 0≤x≤1, a gallium nitride multiple mqw light emitting layer, one first electrode and one second electrode, wherein:
The rectangle dielectric substrate has one first first type surface and one second first type surface;
Semiconductor laminated, have one first first type surface, one second first type surface and one the 3rd first type surface, semiconductor laminatedly combine with first first type surface of this dielectric substrate through second first type surface, its first first type surface and the 3rd first type surface are positioned at the same side of first first type surface of dielectric substrate, and its first first type surface and second first type surface lay respectively at two opposite sides of the 3rd semiconductor laminated first type surface; Semiconductor laminated comprising:
Luminescent layer has one first first type surface and one second first type surface:
One first semiconductor bond course has first conductivity, and has one first first type surface and one second first type surface, and second first type surface of the first semiconductor bond course combines with first first type surface of luminescent layer; And
One second semiconductor bond course has second conductivity, has one first first type surface and one second first type surface, and first first type surface of the second semiconductor bond course combines with second first type surface of luminescent layer;
First electrode has first conductivity, and combines first electrode and the first semiconductor bond course electric connection with semiconductor laminated first first type surface; And
Second electrode has second conductivity, and combines second electrode and the second semiconductor bond course electric connection in a precalculated position with semiconductor laminated the 3rd first type surface;
Wherein have from this first electrode a plurality of current paths to this second electrode in regular turn by and the first semiconductor bond course, luminescent layer and the second semiconductor bond course; Wherein, first electrode and second electrode and come rectangular longitudinal direction.
Preferably, described semiconductor laminatedly more comprise:
One first semiconductor contact layer has first conductivity, and has one first first type surface and one second first type surface, and second first type surface of this first semiconductor contact layer combines with first first type surface of the first semiconductor bond course; And
One second semiconductor contact layer has second conductivity, and has one first first type surface and one second first type surface, and first first type surface of second semiconductor contact layer combines with second first type surface of the second semiconductor bond course;
Wherein there are several current paths to pass through described first semiconductor contact layer, the described first semiconductor bond course, luminescent layer, the second semiconductor bond course and second semiconductor contact layer in regular turn from described first electrode to the second electrode.
Preferably, described semiconductor laminatedly more comprise:
One resilient coating has one first first type surface and one second first type surface; First first type surface of resilient coating combines with second first type surface of described second semiconductor contact layer.
Preferably, described semiconductor laminatedly more comprise:
One transparency conducting layer has one first first type surface and second first type surface; Second first type surface of transparency conducting layer combines with a predetermined portions in first first type surface of first semiconductor contact layer, transparency conducting layer makes described first electrode can pass this transparency conducting layer and directly and form Schottky contacts between described first semiconductor contact layer, and forms between this transparency conducting layer and first electrode and electrically contact; Form ohmic contact between this transparency conducting layer and first semiconductor contact layer;
Wherein have from first electrode and extremely pass through transparency conducting layer, first semiconductor contact layer, the described first semiconductor bond course, luminescent layer, the second semiconductor bond course and described second semiconductor contact layer in regular turn in several paths of described second electrode.
Preferably, described semiconductor laminatedly more comprise:
One crystal grown layer has one first first type surface and one second first type surface, and its first first type surface combines with second first type surface of described resilient coating.
Preferably, described dielectric substrate comprises and is selected from sapphire, LiGaO
3And LiAlO
3A kind of material in the constituent material group of institute; Described crystal grown layer comprises and is selected from GaN, Al
mGa
1-mN, wherein, 0≤m≤1 and In
nGa
1-nN, wherein, 0≤n≤1, a kind of material in the constituent material group of institute; Described resilient coating is made by the GaN material; Described second semiconductor contact layer comprises a kind of material that is selected from GaN and the constituent material group of AlGaN institute; The described second semiconductor bond course comprises Al
xGa
1-xN, 0≤x≤1; Described luminescent layer comprises r indium gallium nitride quantum well and r+1 InGaN wall, and each indium gallium nitride quantum well two sides up and down all has an InGaN wall, wherein, r 〉=1, each indium gallium nitride quantum well is by In
eGa
1-eN constitutes, and each InGaN wall is by In
fGa
1-fN constitutes, and 0≤f＜e≤1; The described first semiconductor bond course comprises Al
zGa
1-zN, wherein, 0≤z≤1; Described first semiconductor contact layer comprises a kind of material that is selected from GaN and the constituent material group of AlGaN institute; Described first electrode comprises a kind of material that is selected from Ti/Al, Cr/Al, Nd/Al, Pd/Al, TiN, TiWNx, Zr/Al, Hf/Al, Al, Zr and the Sc constituent material group; Described second electrode comprises a kind of material that is selected from Ti/Al, Cr/Al, Nd/Al, Pd/Al, TiN, TiWNx, Zr/Al, Hf/Al, Al, Zr and the Sc constituent material group.
Preferably, described dielectric substrate comprises and is selected from sapphire, LiGaO
3And LiAlO
3A kind of material in the constituent material group of institute; Described crystal grown layer comprises and is selected from GaN, Al
mGa
1-mN, wherein, 0≤m≤1 and In
nGa
1-nN, wherein, 0≤n≤1, a kind of material in the constituent material group of institute; Described resilient coating is made by the GaN material; Described second semiconductor contact layer comprises a kind of material that is selected from GaN and the constituent material group of AlGaN institute; The described second semiconductor bond course comprises Al
xGa
1-xN, wherein, 0≤x≤1; Described luminescent layer comprises r indium gallium nitride quantum well and r+1 InGaN wall, and each indium gallium nitride quantum well two sides up and down all has an InGaN wall, wherein, r 〉=1, each indium gallium nitride quantum well is by In
eGa
1-eN constitutes, and each InGaN wall is by In
fGa
1-fN constitutes, and 0≤f＜e≤1; The described first semiconductor bond course comprises Al
zGa
1-zN, wherein, 0≤z≤1; Described first semiconductor contact layer comprises a kind of material that is selected from GaN and the constituent material group of AlGaN institute; Described first electrode comprises a kind of material that is selected from Au, Ni/Au, Pt/Au, Pd/Au, Cr/Au, Ta/Ti, Pt/Ni/Au, Mo/Au and the constituent material group of Co/Au institute; Second electrode comprises a kind of material that is selected from Au, Ni/Au, Pt/Au, Pd/Au, Cr/Au, Ta/Ti, Pt/Ni/Au, Mo/Au and the constituent material group of Co/Au institute.
Preferably, described dielectric substrate comprises and is selected from sapphire, LiGaO
3And LiAlO
3A kind of material in the constituent material group of institute; Described crystal grown layer comprises and is selected from GaN, Al
mGa
1-mN, wherein, 0≤m≤1 and In
nGa
1-nN, wherein, 0≤n≤1, a kind of material in the constituent material group of institute; Described resilient coating is made by the GaN material; Described second semiconductor contact layer comprises a kind of material that is selected from GaN and the constituent material group of AlGaN institute; The described second semiconductor bond course comprises Al
xGa
1-xN, wherein, 0≤x≤1; Described luminescent layer comprises r indium gallium nitride quantum well and r+1 InGaN wall, and each indium gallium nitride quantum well two sides up and down all has an InGaN wall, wherein, r 〉=1, each indium gallium nitride quantum well is by In
eGa
1-eN constitutes, and each InGaN wall is by In
fGa
1-fN constitutes, and 0≤f＜e≤1; The described first semiconductor bond course comprises Al
zGa
1-zN, wherein, 0≤z≤1; Described first semiconductor contact layer comprises a kind of material that is selected from GaN and the constituent material group of AlGaN institute; Described first electrode comprises a kind of material that is selected from Ti/Al, Cr/Au, Nd/Al, Pd/Al, TiN, TiWNx, Zr/Al, Hf/Al, Al, Zr and the Sc constituent material group; Described second electrode comprises a kind of material that is selected from Au, Ni/Au, Pt/Au, Pd/Au, Cr/Au, Ta/Ti, Pt/Ni/Au, Mo/Au and the constituent material group of Co/Au institute.
Preferably, described dielectric substrate comprises and is selected from sapphire, LiGaO
3And LiAlO
3A kind of material in the constituent material group of institute; Described crystal grown layer comprises and is selected from GaN, Al
mGa
1-mN, wherein, 0≤m≤1 and In
nGa
1-nN, wherein, 0≤n≤1, a kind of material in the constituent material group of institute; Described resilient coating is made by the GaN material; Described second semiconductor contact layer comprises a kind of material that is selected from GaN and the constituent material group of AlGaN institute; The described second semiconductor bond course comprises Al
xGa
1-xN, wherein, 0≤x≤1; Described luminescent layer comprises r indium gallium nitride quantum well and r+1 InGaN wall, and each indium gallium nitride quantum well two sides up and down all has an InGaN wall, wherein, r 〉=1, each indium gallium nitride quantum well is by In
eGa
1-eN constitutes, and each InGaN wall is by In
fGa
1-fN constitutes, and 0≤f＜e≤1; The described first semiconductor bond course comprises Al
zGa
1-zN, wherein, 0≤z≤1; Described first semiconductor contact layer comprises a kind of material that is selected from GaN and the constituent material group of AlGaN institute; Described first electrode comprises a kind of material that is selected from Au, Ni/Au, Pt/Au, Pd/Au, Cr/Au, Ta/Ti, Pt/Ni/Au, Mo/Au and the constituent material group of Co/Au institute; Described second electrode comprises a kind of material that is selected from Ti/Al, Cr/Al, Nd/Al, Pd/Al, TiN, TiWNx, Zr/Al, Hf/Al, Al, Zr and the constituent material group of Sc institute.
For the present invention that achieves the above object takes following measure: LED chip construction of the present invention comprises a rectangle dielectric substrate that is formed by sapphire, be formed on the gallium nitride crystal growth layer on the dielectric substrate, be formed on the gallium nitride resilient coating on the gallium nitride crystal growth layer, be formed on the n type gallium nitride contact layer on the resilient coating, be formed on the InGaN multiple quantum trap luminescent layer on the n type gallium nitride contact layer, be formed on a p type aluminium gallium nitride alloy bond course of luminescent layer, be formed on the p type gallium nitride contact layer on the p type aluminium gallium nitride alloy bond course, be formed on the indium tin oxide transparent conductive layer on the p type gallium nitride contact layer, wherein some is removed with etching mode, to expose p type gallium nitride contact layer, be formed on electrode before the p type Ti/Al on the exposed portions serve of p type gallium nitride contact layer, and electrode contacts with transparency conducting layer before making, again because sapphire is non-conductive, so light-emitting diode suitably must be etched to n type gallium nitride contact layer, on n type gallium nitride contact layer, form a n type Ti/Al rear electrode then, P type electrode and N type electrode also come the vertical of rectangle chip surface, and all keep a suitable distance with chip edge, in order to avoid do not produce why not very consequence of director because of electrode suitably aligns, also keep a suitable distance between P type electrode and the N type electrode, in order to avoid produce main short circuit phenomenon between this two electrode.
The present invention takes following concrete structure:
A kind of light-emitting diode of the present invention comprises: a rectangle dielectric substrate, semiconductor lamination, semiconductor bond course, a luminescent layer, one first electrode and one second electrode is characterized in that:
The rectangle dielectric substrate has one first first type surface and one second first type surface, one luminescent layer; Semiconductor laminated, have one first first type surface, one second first type surface and one the 3rd first type surface, semiconductor laminatedly combine with first first type surface of this dielectric substrate through two first type surfaces, its first first type surface and the 3rd first type surface are positioned at the same side of first first type surface of dielectric substrate, and its first first type surface and second first type surface lay respectively at two opposite sides of the 3rd semiconductor laminated first type surface; Semiconductor laminated comprising:
Luminescent layer has one first first type surface and one second first type surface;
One first semiconductor bond course has first conductivity, and has one first first type surface and one second first type surface, and second first type surface of the first semiconductor bond course combines with first first type surface of luminescent layer; And
One second semiconductor bond course has second conductivity, has one first first type surface and one second first type surface, and first first type surface of the second semiconductor bond course combines with second first type surface of luminescent layer;
First electrode has first conductivity, and combines with semiconductor laminated first first type surface, first electrode and the first semiconductor bond course electric connection, and
Second electrode has second conductivity, and combines second electrode and the second semiconductor bond course electric connection in a precalculated position with semiconductor laminated the 3rd first type surface;
Wherein first electrode and second electrode in fact and come rectangular longitudinal direction and have from this first electrode the several current paths to this second electrode in regular turn by the first semiconductor bond course, luminescent layer and the second semiconductor bond course.
Description of drawings
Fig. 1 is a kind of vertical view of existing imaginary light-emitting diode chip for backlight unit, and P type electrode wherein and N type electrode are configured on the foursquare diagonal.
Fig. 2 is a kind of vertical view of imaginary light-emitting diode chip for backlight unit of the present invention, P type electrode wherein and N type electrode be configured in side by side one rectangular vertically.
Fig. 3 is the vertical view of the light-emitting diode chip for backlight unit of light-emitting diode one embodiment of the present invention.
The generalized section of Fig. 4 for being got along I-I hatching among Fig. 3.
Fig. 5 is the vertical view of light-emitting diode chip for backlight unit among another embodiment of light-emitting diode of the present invention.
Embodiment
Reaching embodiment in conjunction with the accompanying drawings is described in detail as follows specific structural features of the present invention:
At first with reference to Fig. 1 and Fig. 2, as shown in Figure 1, one imaginary light-emitting diode chip for backlight unit, circular P type electrode 19 wherein is configured on the diagonal of a square chip surface with N type electrode 20, this two electrode contacts with each other, and tangent with chip edge, if the radius of this two electrode is all R, then this area of chip is about 11.66R
2As shown in Figure 2, an imaginary light-emitting diode chip for backlight unit, circular P type electrode 19 wherein is configured in the vertical of a rectangle chip side by side with N type electrode 20, this two electrode contacts with each other, and tangent with chip edge, if the radius of this two electrode is all R, then this area of chip is about 8R
2Thereby, shown in Figure 2
Area of chip only is about 69% of chip area shown in Figure 1.Hence one can see that, in the existing light-emitting diode chip for backlight unit, P type electrode 19 is disposed on the diagonal of square chip surface with N type electrode 20, according to notion of the present invention, P type electrode 19 and N type electrode 20 the rectangle chip surface vertically side by side, can reduce the area of light-emitting diode chip for backlight unit.
As shown in Figure 3 and Figure 4, its expression the present invention one implements wasteful 1 light-emitting diode chip for backlight unit, in the present embodiment, light-emitting diode chip for backlight unit comprises a rectangle dielectric substrate 10 that is formed by sapphire, be formed on the gallium nitride crystal growth layer 11 on the dielectric substrate 10, be formed on the gallium nitride resilient coating 12 on the gallium nitride crystal growth layer 11, be formed on the n type gallium nitride contact layer 13 on the resilient coating 12, be formed on the n type aluminium gallium nitride alloy bond course 14 on the n type gallium nitride contact layer 13, be formed on the InGaN multiple quantum trap luminescent layer 15 on the n type aluminium gallium nitride alloy bond course 14, be formed on the p type aluminium gallium nitride alloy bond course 16 on the luminescent layer 15, be formed on the p type gallium nitride contact layer 17 on the p type aluminium gallium nitride alloy bond course 16, be formed on the indium tin oxide transparent conductive layer 18 on the p type gallium nitride contact layer 17, wherein some is removed with etching mode, forgive contact layer 17 with the nitrogenize of exposed portions serve p type, be formed on electrode 19 before the p type Ti/Al on this exposed portions serve of p type gallium nitride contact layer 17, and electrode 19 contacts with transparency conducting layer 18 before making, again because sapphire is non-conductive, so light-emitting diode suitably must be etched to n type gallium nitride contact layer 13, then, at n gallium nitride contact layer 13, on n type gallium nitride contact layer 13, form a n type Ti/Al rear electrode 20 then, P type electrode 19 is with N type electrode 20 and come the vertical of rectangle chip surface shown in Figure 3, and all keep one suitably apart from d1 with chip edge, for example 150 microns, in order to avoid do not produce why not very consequence of director because of electrode suitably aligns, also keep one suitably apart from d2 between electrode 19 and the N type electrode 20, for example 50 microns, in order to avoid produce the adverse consequences of short circuit between this two electrode; Hence one can see that, electrode 19 in the existing light-emitting diode chip for backlight unit is configured on the diagonal of square chip surface with N type electrode 20, and among the present invention, P type electrode 19 and the vertical arrangement of N type electrode 20 at the rectangle chip surface, both compare, and the present invention can reduce the area of light-emitting diode chip for backlight unit.
As shown in Figure 5, it is the vertical view of light-emitting diode chip for backlight unit in another embodiment of the present invention, the difference of itself and Fig. 3 and light-emitting diode chip for backlight unit shown in Figure 4 is: N type electrode 20, two sides all keep without etched light-emitting zone about in Fig. 5, to obtain an appropriate balance point between the chip area that reduces light-emitting diode and its light-emitting area of increase.
General personage in the art can understand easily, and dielectric substrate 10 can comprise and is selected from sapphire, LIGaO
3, and LiAlO
3, a kind of material in the constituent material group of institute; Crystal grown layer 11 can comprise and is selected from GaN, Al
mGa
1-mN, wherein, 0≤m≤1, and In
nGa
1-nN, wherein, 0≤n≤1, a kind of material in the constituent material group of institute; N type resilient coating 12 can be made by the GaN material; N type contact layer 13 can comprise a kind of material that is selected from GaN and the constituent material group of AlGaN institute; N type bond course 14 comprises Al
xGa
1-xN, wherein, 0≤x≤1; InGaN multiple quantum trap luminescent layer 15 comprises r indium gallium nitride quantum well and r+1 InGaN wall, make each indium gallium nitride quantum well up and down two sides one InGaN wall is all arranged, wherein, r 〉=1, each indium gallium nitride quantum well is by In
eGa
1-eN constitutes, and each InGaN wall is by In
fGa
1-fN constitutes, and 0≤e＜f≤1, and p type bond course 16 can comprise Al
zGa
1-zN, wherein, 0≤z≤1; P type contact layer 17 can comprise a kind of material that is selected from GaN and the constituent material group of AlGaN institute, p type electrode 19 can comprise a kind of material that is selected from Ti/Al, Cr/Al, Nd/Al, Pd/Al, TiN, TiWNx, Zr/Al, Hf/Al, Al, Zr and the Sc constituent material group, and n type electrode 20 can comprise a kind of material that is selected from Ti/Al, Cr/Al, Nd/Al, Pd/Al, TiN, TiWNx, Zr/Al, Hf/Al, Al, Zr and the Sc constituent material group.
Compared with prior art, the present invention has following effect:
Electrode 19 contacts with p type contact layer 17 formation Schottky (Schottky) before the P type Ti/Al, thereby does not produce principal current in fact under preceding electrode 19, and the electric current of sending from preceding electrode 19 flow to luminescent layer 15 through transparency conducting layer 18, produces luminous effect.Like this and since can avoid lighttight before electrode 19 under the luminous effect of generation, so can improve luminous efficiency.
The above, only for using embodiment with convenient explanation feature of the present invention, scope of the present invention is not limited thereto embodiment, and is all according to any change that the present invention did, and all belongs to protection scope of the present invention.For example, the InGaN multiple quantum trap luminescent layer 15 among this embodiment single quantum well structure known of ordinary person in the art replaces, or replaces with pure InGaN luminescent layer; Again for example, economize and remove crystal grown layer 11 and gallium nitride resilient coating 12, also obviously do not break away from protection of the present invention and scope.
Claims (9)
1, a kind of light-emitting diode comprises: a rectangle dielectric substrate, a gallium nitride semiconductor lamination, Al
xGa
1-xN semiconductor bond course, wherein 0≤x≤1, a gallium nitride multiple mqw light emitting layer, one first electrode and one second electrode is characterized in that:
The rectangle dielectric substrate has one first first type surface and one second first type surface;
Semiconductor laminated, have one first first type surface, one second first type surface and one the 3rd first type surface, semiconductor laminatedly combine with first first type surface of this dielectric substrate through second first type surface, its first first type surface and the 3rd first type surface are positioned at the same side of first first type surface of dielectric substrate, and its first first type surface and second first type surface lay respectively at two opposite sides of the 3rd semiconductor laminated first type surface; Semiconductor laminated comprising:
Luminescent layer has one first first type surface and one second first type surface:
One first semiconductor bond course has first conductivity, and has one first first type surface and one second first type surface, and second first type surface of the first semiconductor bond course combines with first first type surface of luminescent layer; And
One second semiconductor bond course has second conductivity, has one first first type surface and one second first type surface, and first first type surface of the second semiconductor bond course combines with second first type surface of luminescent layer;
First electrode has first conductivity, and combines first electrode and the first semiconductor bond course electric connection with semiconductor laminated first first type surface; And
Second electrode has second conductivity, and combines second electrode and the second semiconductor bond course electric connection in a precalculated position with semiconductor laminated the 3rd first type surface;
Wherein have from this first electrode a plurality of current paths to this second electrode in regular turn by and the first semiconductor bond course, luminescent layer and the second semiconductor bond course; Wherein, first electrode and second electrode and come rectangular longitudinal direction.
2, light-emitting diode according to claim 1 is characterized in that: described semiconductor laminatedly more comprise:
One first semiconductor contact layer has first conductivity, and has one first first type surface and one second first type surface, and second first type surface of this first semiconductor contact layer combines with first first type surface of the first semiconductor bond course; And
One second semiconductor contact layer has second conductivity, and has one first first type surface and one second first type surface, and first first type surface of second semiconductor contact layer combines with second first type surface of the second semiconductor bond course;
Wherein there are several current paths to pass through described first semiconductor contact layer, the described first semiconductor bond course, luminescent layer, the second semiconductor bond course and second semiconductor contact layer in regular turn from described first electrode to the second electrode.
3, light-emitting diode according to claim 2 is characterized in that: described semiconductor laminatedly more comprise:
One resilient coating has one first first type surface and one second first type surface; First first type surface of resilient coating combines with second first type surface of described second semiconductor contact layer.
4, light-emitting diode according to claim 3 is characterized in that: described semiconductor laminatedly more comprise:
One transparency conducting layer has one first first type surface and second first type surface; Second first type surface of transparency conducting layer combines with a predetermined portions in first first type surface of first semiconductor contact layer, transparency conducting layer makes described first electrode can pass this transparency conducting layer and directly and form Schottky contacts between described first semiconductor contact layer, and forms between this transparency conducting layer and first electrode and electrically contact; Form ohmic contact between this transparency conducting layer and first semiconductor contact layer;
Wherein have from first electrode and extremely pass through transparency conducting layer, first semiconductor contact layer, the described first semiconductor bond course, luminescent layer, the second semiconductor bond course and described second semiconductor contact layer in regular turn in several paths of described second electrode.
5, light-emitting diode according to claim 4 is characterized in that: described semiconductor laminatedly more comprise:
One crystal grown layer has one first first type surface and one second first type surface, and its first first type surface combines with second first type surface of described resilient coating.
6, light-emitting diode according to claim 5 is characterized in that:
Described dielectric substrate comprises and is selected from sapphire, LiGaO
3And LiAlO
3A kind of material in the constituent material group of institute; Described crystal grown layer comprises and is selected from GaN, Al
mGa
1-mN, wherein, 0≤m≤1 and In
nGa
1-nN, wherein, 0≤n≤1, a kind of material in the constituent material group of institute; Described resilient coating is made by the GaN material; Described second semiconductor contact layer comprises a kind of material that is selected from GaN and the constituent material group of AlGaN institute; The described second semiconductor bond course comprises Al
xGa
1-xN, 0≤x≤1; Described luminescent layer comprises r indium gallium nitride quantum well and r+1 InGaN wall, and each indium gallium nitride quantum well two sides up and down all has an InGaN wall, wherein, r 〉=1, each indium gallium nitride quantum well is by In
eGa
1-eN constitutes, and each InGaN wall is by In
fGa
1-fN constitutes, and 0≤f＜e≤1; The described first semiconductor bond course comprises Al
zGa
1-zN, wherein, 0≤z≤1; Described first semiconductor contact layer comprises a kind of material that is selected from GaN and the constituent material group of AlGaN institute; Described first electrode comprises a kind of material that is selected from Ti/Al, Cr/Al, Nd/Al, Pd/Al, TiN, TiWNx, Zr/Al, Hf/Al, Al, Zr and the Sc constituent material group; Described second electrode comprises a kind of material that is selected from Ti/Al, Cr/Al, Nd/Al, Pd/Al, TiN, TiWNx, Zr/Al, Hf/Al, Al, Zr and the Sc constituent material group.
7, light-emitting diode according to claim 5 is characterized in that:
Described dielectric substrate comprises and is selected from sapphire, LiGaO
3And LiAlO
3A kind of material in the constituent material group of institute; Described crystal grown layer comprises and is selected from GaN, Al
mGa
1-mN, wherein, 0≤m≤1 and In
nGa
1-nN, wherein, 0≤n≤1, a kind of material in the constituent material group of institute; Described resilient coating is made by the GaN material; Described second semiconductor contact layer comprises a kind of material that is selected from GaN and the constituent material group of AlGaN institute; The described second semiconductor bond course comprises Al
xGa
1-xN, wherein, 0≤x≤1; Described luminescent layer comprises r indium gallium nitride quantum well and r+1 InGaN wall, and each indium gallium nitride quantum well two sides up and down all has an InGaN wall, wherein, r 〉=1, each indium gallium nitride quantum well is by In
eGa
1-eN constitutes, and each InGaN wall is by In
fGa
1-fN constitutes, and 0≤f＜e≤1; The described first semiconductor bond course comprises Al
zGa
1-zN, wherein, 0≤z≤1; Described first semiconductor contact layer comprises a kind of material that is selected from GaN and the constituent material group of AlGaN institute; Described first electrode comprises a kind of material that is selected from Au, Ni/Au, Pt/Au, Pd/Au, Cr/Au, Ta/Ti, Pt/Ni/Au, Mo/Au and the constituent material group of Co/Au institute; Second electrode comprises a kind of material that is selected from Au, Ni/Au, Pt/Au, Pd/Au, Cr/Au, Ta/Ti, Pt/Ni/Au, Mo/Au and the constituent material group of Co/Au institute.
8, light-emitting diode according to claim 5 is characterized in that:
Described dielectric substrate comprises and is selected from sapphire, LiGaO
3And LiAlO
3A kind of material in the constituent material group of institute; Described crystal grown layer comprises and is selected from GaN, Al
mGa
1-mN, wherein, 0≤m≤1 and In
nGa
1-nN, wherein, 0≤n≤1, a kind of material in the constituent material group of institute; Described resilient coating is made by the GaN material; Described second semiconductor contact layer comprises a kind of material that is selected from GaN and the constituent material group of AlGaN institute; The described second semiconductor bond course comprises Al
xGa
1-xN, wherein, 0≤x≤1; Described luminescent layer comprises r indium gallium nitride quantum well and r+1 InGaN wall, and each indium gallium nitride quantum well two sides up and down all has an InGaN wall, wherein, r 〉=1, each indium gallium nitride quantum well is by In
eGa
1-eN constitutes, and each InGaN wall is by In
fGa
1-fN constitutes, and 0≤f＜e≤1; The described first semiconductor bond course comprises Al
zGa
1-zN, wherein, 0≤z≤1; Described first semiconductor contact layer comprises a kind of material that is selected from GaN and the constituent material group of AlGaN institute; Described first electrode comprises a kind of material that is selected from Ti/Al, Cr/Au, Nd/Al, Pd/Al, TiN, TiWNx, Zr/Al, Hf/Al, Al, Zr and the Sc constituent material group; Described second electrode comprises a kind of material that is selected from Au, Ni/Au, Pt/Au, Pd/Au, Cr/Au, Ta/Ti, Pt/Ni/Au, Mo/Au and the constituent material group of Co/Au institute.
9, light-emitting diode according to claim 5 is characterized in that:
Described dielectric substrate comprises and is selected from sapphire, LiGaO
3And LiAlO
3A kind of material in the constituent material group of institute; Described crystal grown layer comprises and is selected from GaN, Al
mGa
1-mN, wherein, 0≤m≤1 and In
nGa
1-nN, wherein, 0≤n≤1, a kind of material in the constituent material group of institute; Described resilient coating is made by the GaN material; Described second semiconductor contact layer comprises a kind of material that is selected from GaN and the constituent material group of AlGaN institute; The described second semiconductor bond course comprises Al
xGa
1-xN, wherein, 0≤x≤1; Described luminescent layer comprises r indium gallium nitride quantum well and r+1 InGaN wall, and each indium gallium nitride quantum well two sides up and down all has an InGaN wall, wherein, r 〉=1, each indium gallium nitride quantum well is by In
eGa
1-eN constitutes, and each InGaN wall is by In
fGa
1-fN constitutes, and 0≤f＜e≤1; The described first semiconductor bond course comprises Al
zGa
1-zN, wherein, 0≤z≤1; Described first semiconductor contact layer comprises a kind of material that is selected from GaN and the constituent material group of AlGaN institute; Described first electrode comprises a kind of material that is selected from Au, Ni/Au, Pt/Au, Pd/Au, Cr/Au, Ta/Ti, Pt/Ni/Au, Mo/Au and the constituent material group of Co/Au institute; Described second electrode comprises a kind of material that is selected from Ti/Al, Cr/Al, Nd/Al, Pd/Al, TiN, TiWNx, Zr/Al, Hf/Al, Al, Zr and the constituent material group of Sc institute.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB991191536A CN1134849C (en) | 1999-09-20 | 1999-09-20 | Light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB991191536A CN1134849C (en) | 1999-09-20 | 1999-09-20 | Light emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1289152A CN1289152A (en) | 2001-03-28 |
| CN1134849C true CN1134849C (en) | 2004-01-14 |
Family
ID=5280731
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB991191536A Expired - Lifetime CN1134849C (en) | 1999-09-20 | 1999-09-20 | Light emitting diode |
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| Country | Link |
|---|---|
| CN (1) | CN1134849C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1945865B (en) * | 2005-10-07 | 2010-05-12 | 三星电机株式会社 | Nitride-based semiconductor light emitting diode and method of manufacturing the same |
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| JP4023121B2 (en) * | 2001-09-06 | 2007-12-19 | 豊田合成株式会社 | N-type electrode, group III nitride compound semiconductor device, method for manufacturing n-type electrode, and method for manufacturing group III nitride compound semiconductor device |
| EP2149906A3 (en) * | 2002-08-29 | 2014-05-07 | Seoul Semiconductor Co., Ltd. | Light-emitting device having light-emitting diodes |
| CN1316567C (en) * | 2003-04-16 | 2007-05-16 | 方大集团股份有限公司 | Preparation f green light fallium nitride base LED epitaxial wafer by adopting multiquantum well |
| KR100826424B1 (en) * | 2003-04-21 | 2008-04-29 | 삼성전기주식회사 | Semiconductor type light emitting diode and manufacturing method thereof |
| CN100442547C (en) * | 2004-09-06 | 2008-12-10 | 璨圆光电股份有限公司 | Gallium nitride system LED with growth under low-temperature and low-resistance P-shaped contact layer |
| CN100342559C (en) * | 2004-09-06 | 2007-10-10 | 璨圆光电股份有限公司 | Production of LED with gallium nitride system |
| CN100336235C (en) * | 2004-09-06 | 2007-09-05 | 璨圆光电股份有限公司 | LED structure with gallium nitride system |
| CN100369276C (en) * | 2004-09-06 | 2008-02-13 | 璨圆光电股份有限公司 | LED structure |
| CN100336236C (en) * | 2004-09-06 | 2007-09-05 | 璨圆光电股份有限公司 | LED structure |
| CN100392881C (en) * | 2005-06-23 | 2008-06-04 | 华南师范大学 | GaN-based LED extension sheet and its preparation method |
| CN100433381C (en) * | 2005-08-02 | 2008-11-12 | 璨圆光电股份有限公司 | Chip upside-down mounting type light-emitting diode packaging structure and light-emitting diode chip |
| TWI705581B (en) * | 2016-09-09 | 2020-09-21 | 晶元光電股份有限公司 | Light-emitting device and manufacturing method thereof |
-
1999
- 1999-09-20 CN CNB991191536A patent/CN1134849C/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1945865B (en) * | 2005-10-07 | 2010-05-12 | 三星电机株式会社 | Nitride-based semiconductor light emitting diode and method of manufacturing the same |
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|---|---|
| CN1289152A (en) | 2001-03-28 |
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