CN100336236C - LED structure - Google Patents
LED structure Download PDFInfo
- Publication number
- CN100336236C CN100336236C CNB2004100739306A CN200410073930A CN100336236C CN 100336236 C CN100336236 C CN 100336236C CN B2004100739306 A CNB2004100739306 A CN B2004100739306A CN 200410073930 A CN200410073930 A CN 200410073930A CN 100336236 C CN100336236 C CN 100336236C
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- CN
- China
- Prior art keywords
- layer
- aluminum indium
- gallium
- indium nitride
- barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000004888 barrier function Effects 0.000 claims abstract description 49
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 12
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 49
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 claims description 49
- 229910052733 gallium Inorganic materials 0.000 claims description 49
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 24
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 24
- 238000010276 construction Methods 0.000 claims description 21
- 230000000737 periodic effect Effects 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 claims description 4
- 229910020776 SixNy Inorganic materials 0.000 abstract 1
- 238000005036 potential barrier Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000008034 disappearance Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Abstract
The present invention relates to an LED structure stacked on a basal plate which is provided with an N-type contact layer made of N-type gallium nitride system material. The present invention comprises one barrier layer stacked on the N-type contact layer, a luminous layer which is an Al1-x-yGaxInyN layer stacked on the barrier layer, another barrier layer stacked on the luminous layer, a P-type contact layer stacked on the toplevel barrier layer, a P electrode layer for ohmic contact formed on the top of the P-type contact layer, and an N electrode layer for ohmic contact formed at one side of the N-type contact layer, wherein the barrier layers are respectively orderly stacked with an Al1-x-yGaxInyN layer, an SixNy layer and another Al1-x-yGaxInyN layer, and the P-type contact layer is made of Mg-doped P-type GaN material.
Description
Technical field
The present invention particularly provides the spy to have the light emitting diode construction of barrier layer and luminescent layer about a kind of light emitting diode construction.
Background technology
Conventional gallium nitride (GaN) series LED structure, its luminescent layer is the multiple quantum trap structure of potential barrier with silicon (Si) doped gallium nitride mainly, to limit to electron hole pair, in order to improve the operating voltage of internal quantum (internal quantum efficiency) and reduction assembly in the combination of InGaN (InGaN) potential well.But also therefore the photon of part is absorbed by the potential barrier of this silicon-doped gallium nitride, and can't escape out from whole multiple quantum trap structure, makes external quantum efficiency (external quantumefficiency) reduce.In addition, also, the piezoelectric field effect produces the V-type defective owing to causing the multiple quantum trap structural stress to increase.
Therefore, in order to overcome above-mentioned defective, the disappearance that the present invention is based on existing LED structure with gallium nitride system is invented.
Summary of the invention
About the present invention is a kind of light emitting diode construction, with restriction and the disappearance in one of reality solution or even a plurality of aforementioned related art.
Purpose of the present invention is to utilize aluminum indium nitride gallium (Al
1-x-yGa
xIn
yN)/silicon nitride (Si
xN
y) replace to pass silicon-doped gallium nitride be the multiple quantum trap structure of potential barrier, can effectively make the interface alligatoring of potential barrier and potential well, and increases the photon probability escaped out of multiple quantum trap structure since then, makes the external quantum efficiency lifting.In addition, diffuse into aluminum indium nitride gallium barrier layer to reduce the operating voltage of assembly by silicon in the silicon nitride.What is more, its aluminum indium nitride gallium lattice constant and potential well be coupling, can solve the problem that causes the multiple quantum trap structural stress to increase because of the piezoelectric field effect.
For achieving the above object, the structure of light-emitting diode quantum well knot provided by the invention, it is mainly on its surface has on the substrate that n type gallium nitride is the formed N type of a material contact layer, the structure of institute's storehouse, comprise: one or several barrier layers, it has one deck aluminum indium nitride gallium (Al for storehouse in regular turn
1-x-yGa
xIn
yN) layer, one deck silicon nitride (Si
xN
y) layer and another layer aluminum indium nitride gallium layer; One or several luminescent layers, it is for being stacked on this barrier layer formed aluminum indium nitride gallium layer; One P type contact layer, it is to be stacked on the barrier layer of top layer, and is formed by mix P type gallium nitride (GaN) material of (Mg-doped) of magnesium, and forms the P electrode layer of an ohmic contact in its top; And aforesaid N type contact layer one side forms the N electrode layer of an ohmic contact.
Purpose of the present invention and function will be more clear after cooperation the following icon is described further.
Description of drawings
Accompanying drawing is shown respectively forms the specific embodiment of assembly for providing as specifically presenting described in this specification, and explains that main purpose of the present invention is to promote understanding of the present invention.
Fig. 1 is shown to be a kind of preferred embodiment of light emitting diode construction of the present invention.
Fig. 2 is shown to be the barrier layer generalized section in the preferred embodiment of Fig. 1 of the present invention.
Fig. 3 is shown to be the generalized section of another execution mode of the barrier layer in the preferred embodiment of Fig. 1 of the present invention.
Fig. 4 is shown to be the another kind of preferred embodiment of light emitting diode construction of the present invention.
Embodiment
Below will cooperate appended Reference numeral to be described in further detail at preferred embodiment of the present invention.Some yardstick is understood the present invention so that clearer description to be provided to help those skilled in the art with the expression that other partly relevant scale ratio is exaggerated.
Fig. 1 is shown to be a kind of preferred embodiment of light emitting diode construction of the present invention; Fig. 2 is shown to be the barrier layer generalized section in the preferred embodiment of Fig. 1 of the present invention.
Shown with reference to figure 1, first embodiment of light emitting diode construction of the present invention, it comprises: substrate 101, N type contact layer 102, barrier layer 103, luminescent layer 104 and P type contact layer 105.
Shown with reference to figure 2, this barrier layer 103, it comprises: one first aluminum indium nitride gallium layer 103a, it is with 400～1000 ℃ of growth temperature, the aluminum indium nitride gallium (Al of epitaxial thickness 5～300 dusts on this N type contact layer 102
1-x-yGa
xIn
yN) layer, x 〉=0 wherein, y 〉=0,1 〉=x+y 〉=0 makes its band gap (band gap) big than luminescent layer 104; One silicon nitride layer 103b, it is with 400～1000 ℃ of growth temperature, goes up the silicon nitride (Si of epitaxial thickness 5～300 dusts in this first aluminum indium nitride gallium layer 103a
xN
y) layer, x 〉=0 wherein, y 〉=0; And, one second aluminum indium nitride gallium layer 103c, it is with 400～1000 ℃ of growth temperature, goes up the aluminum indium nitride gallium (Al of epitaxial thickness 5～300 dusts in this silicon nitride layer 103b
1-x-yGa
xIn
yN) layer.
This luminescent layer 104 is with 400～1000 ℃ of growth temperature, the aluminum indium nitride gallium (Al of epitaxial thickness 5～100 dusts on this barrier layer 103
1-x-yGa
xIn
yN) layer, x 〉=0 wherein, y 〉=0,1 〉=x+y 〉=0, and form again as aforesaid barrier layer 103 on this luminescent layer 104.
This P type contact layer 105, by magnesium doped P-type gallium nitride (GaN) material is formed, its top forms the P electrode layer 105a of an ohmic contact.
The generalized section of the another kind of execution mode of the shown preferred embodiment barrier layer for Fig. 1 of the present invention of Fig. 3.
Shown with reference to figure 3, this barrier layer 103, comprise: several layers first aluminum indium nitride gallium layer 103a, several layers of silicon nitride layer 103b and one second aluminum indium nitride gallium layer 103c, each layer first aluminum indium nitride gallium layer 103a is with 400～1000 ℃ of growth temperature, the aluminum indium nitride gallium (Al of epitaxial thickness 5～300 dusts
1-x-yGa
xIn
yN) layer, x 〉=0 wherein, y 〉=0,1 〉=x+y 〉=0; Each layer silicon nitride layer 103b, it is with 400～1000 ℃ of growth temperature, the silicon nitride (Si of epitaxial thickness 5～300 dusts
xN
y) layer, x 〉=0 wherein, y 〉=0; And, this second aluminum indium nitride gallium layer 103c, it is with 400～1000 ℃ of growth temperature, the aluminum indium nitride gallium (Al of epitaxial thickness 5～300 dusts
1-x-yGa
xIn
yN) layer.Wherein, first aluminum indium nitride gallium layer 103a of each layer and silicon nitride layer 103b are the periodic structure that is concatenated to form in regular turn (growth cycle number of repetition 〉=2 time), and the first aluminum indium nitride gallium layer 103a of the bottom then forms this second aluminum indium nitride gallium layer 103c for being formed on this N type contact layer 102 on the silicon nitride layer 103b of top layer.
Based on shown barrier layer 103 embodiment of Fig. 3, among the embodiment of earlier figures 1 shown light emitting diode construction of the present invention, its at least one barrier layer 103 is for forming the layer of periodic structure (growth cycle number of repetition 〉=2 time).
Fig. 4 is shown to be the another kind of preferred embodiment of light emitting diode construction of the present invention.
Shown with reference to figure 4, another embodiment of light emitting diode construction of the present invention, it comprises: substrate 101, N type contact layer 102, several layers of barrier layer 103, several layers of luminescent layer 104 and P type contact layer 105, and the formation of each layer is to have identical mode with previous embodiment.Wherein, each layer barrier layer 103 and luminescent layer 104 are the periodic structure that is concatenated to form in regular turn (growth cycle number of repetition 〉=2 time), and the barrier layer 103 of the bottom is for being formed on this N type contact layer 102, also form another barrier layer 103 on the luminescent layer 104 of top layer, then form this P type contact layer 105 on the barrier layer 103 of top layer.
Each layer aluminum indium nitride gallium (Al in aforesaid each layer barrier layer 103
1-x-yGa
xIn
yN) layer, its band gap (band gap) is than the aluminum indium nitride gallium (Al of luminescent layer 104
1-x-yGa
xIn
yN) layer is big.
Each barrier layer 103 that earlier figures 4 is shown can form the shown simple structure of Fig. 2, or forms the shown periodic structure of Fig. 3 (growth cycle number of repetition 〉=2 time).
Above-described only is in order to explain preferred embodiment of the present invention; be not that attempt is used for the present invention is done any pro forma restriction; thereby, all have in that identical invention spirit is following do relevant any modification of the present invention or change, all must be included in the category that the invention is intended to protect.
Claims (10)
1. light emitting diode construction, it has on the substrate that n type gallium nitride is the formed N type of a material contact layer for the surface, and the structure of institute's storehouse comprises:
One barrier layer, it is stacked on this N type contact layer, and its barrier layer structure has one deck aluminum indium nitride gallium Al for storehouse in regular turn
1-x-yGa
xIn
yThe N layer, x 〉=0 wherein, y 〉=0,1 〉=x+y 〉=0, one deck silicon nitride Si
xN
yLayer, x 〉=0 wherein, y 〉=0, and another layer aluminum indium nitride gallium layer;
One luminescent layer, it is for being stacked on this barrier layer, formed aluminum indium nitride gallium layer, and form again on this luminescent layer as aforesaid barrier layer;
Another barrier layer, it is stacked on this luminescent layer, and its barrier layer structure has one deck aluminum indium nitride gallium layer, one deck silicon nitride layer and another layer aluminum indium nitride gallium layer for storehouse in regular turn;
One P type contact layer, it is stacked on the barrier layer of top layer, and is formed by magnesium doped P-type gallium nitride GaN material, and forms the P electrode layer of an ohmic contact in its top; And
Each layer aluminum indium nitride gallium layer in aforesaid each layer barrier layer, its band gap is than the aluminum indium nitride gallium Al of luminescent layer
1-x-yGa
xIn
yN layer big; And
Aforesaid N type contact layer one side forms the N electrode layer of an ohmic contact.
2. light emitting diode construction as claimed in claim 1, wherein, each barrier layer increase comprises: several layers of aluminum indium nitride gallium layer and several layers of silicon nitride layer, make each aluminum indium nitride gallium layer and silicon nitride layer be the periodic structure that is concatenated to form in regular turn, and also form one deck aluminum indium nitride gallium layer on the silicon nitride layer of top layer.
3. light emitting diode construction as claimed in claim 1, wherein, the aluminum indium nitride gallium layer in each barrier layer, for 400～1000 ℃ of growth temperature, the aluminum indium nitride gallium of epitaxial thickness 5～300 dusts forms.
4. light emitting diode construction as claimed in claim 1, wherein, each silicon nitride layer, it is with 400～1000 ℃ of growth temperature, the silicon nitride Si of epitaxial thickness 5～300 dusts
xN
yLayer, x 〉=0 wherein, y 〉=0.
5. light emitting diode construction as claimed in claim 1, wherein, the aluminum indium nitride gallium layer of this luminescent layer, for 400～1000 ℃ of growth temperature, the aluminum indium nitride gallium of epitaxial thickness 5～100 dusts forms.
6. light emitting diode construction, it has on the substrate that n type gallium nitride is the formed N type of a material contact layer for the surface, and the structure of institute's storehouse comprises:
Several layers of barrier layer, its single barrier layer has one deck aluminum indium nitride gallium Al for storehouse in regular turn
1-x-yGa
xIn
yThe N layer, x 〉=0 wherein, y 〉=0,1 〉=x+y 〉=0,, one deck silicon nitride Si
xN
yLayer, x 〉=0 wherein, y 〉=0, and another layer aluminum indium nitride gallium layer;
Several layers of luminescent layer, its single luminescent layer is formed by aluminum indium nitride gallium material; And
One P type contact layer, it is stacked on the barrier layer of top layer, and is formed by magnesium doped P-type gallium nitride GaN material, and forms the P electrode layer of an ohmic contact in its top;
Wherein, aforesaid N type contact layer one side forms the N electrode layer of an ohmic contact; And
Each layer aluminum indium nitride gallium layer in aforesaid each layer barrier layer, its band gap is than the aluminum indium nitride gallium Al of luminescent layer
1-x-yGa
xIn
yN layer big; And
Aforesaid each layer barrier layer and luminescent layer are the periodic structure that is concatenated to form in regular turn, and the barrier layer of the bottom is formed on this N type contact layer, also form a barrier layer on the luminescent layer of top layer, and make and form this P type contact layer on the barrier layer of top layer.
7. light emitting diode construction as claimed in claim 6, wherein, each barrier layer comprises for increasing: several layers of aluminum indium nitride gallium layer and several layers of silicon nitride layer, make each aluminum indium nitride gallium layer and silicon nitride layer be the periodic structure that is concatenated to form in regular turn, and also form one deck aluminum indium nitride gallium layer on the silicon nitride layer of top layer.
8. light emitting diode construction as claimed in claim 6, wherein, the aluminum indium nitride gallium layer in each barrier layer, for 400～1000 ℃ of growth temperature, the aluminum indium nitride gallium of epitaxial thickness 5～300 dusts forms.
9. light emitting diode construction as claimed in claim 6, wherein, each silicon nitride layer, it is with 400～1000 ℃ of growth temperature, the silicon nitride Si of epitaxial thickness 5～300 dusts
xN
yLayer, x 〉=0 wherein, y 〉=0.
10. light emitting diode construction as claimed in claim 6, wherein, the aluminum indium nitride gallium layer of this luminescent layer, for 400～1000 ℃ of growth temperature, the aluminum indium nitride gallium of epitaxial thickness 5～100 dusts forms.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100739306A CN100336236C (en) | 2004-09-06 | 2004-09-06 | LED structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100739306A CN100336236C (en) | 2004-09-06 | 2004-09-06 | LED structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1747187A CN1747187A (en) | 2006-03-15 |
| CN100336236C true CN100336236C (en) | 2007-09-05 |
Family
ID=36166606
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100739306A Expired - Lifetime CN100336236C (en) | 2004-09-06 | 2004-09-06 | LED structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100336236C (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102544281A (en) | 2012-01-20 | 2012-07-04 | 厦门市三安光电科技有限公司 | Gallium nitride-based LED with multi-layer potential barrier structure |
| CN103794693B (en) * | 2014-02-14 | 2016-05-18 | 中国科学院上海微系统与信息技术研究所 | A kind of light emitting diode and optical coherence tomography system |
| CN105374912B (en) * | 2015-10-28 | 2017-11-21 | 厦门市三安光电科技有限公司 | Light emitting diode and preparation method thereof |
| CN105720149B (en) * | 2016-02-18 | 2018-09-14 | 圆融光电科技股份有限公司 | The epitaxial structure of light emitting diode and the preparation method of epitaxial structure |
| KR20190018319A (en) * | 2017-08-14 | 2019-02-22 | 한양대학교 산학협력단 | Image sensor including quantum dot layer |
| CN109346568B (en) * | 2018-09-29 | 2020-03-27 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5923052A (en) * | 1997-02-12 | 1999-07-13 | Lg Electronics Inc. | Light emitting diode |
| CN1289152A (en) * | 1999-09-20 | 2001-03-28 | 晶元光电股份有限公司 | Light emitting diode |
| JP2004006957A (en) * | 1999-02-05 | 2004-01-08 | Nippon Telegr & Teleph Corp <Ntt> | Optical semiconductor equipment |
-
2004
- 2004-09-06 CN CNB2004100739306A patent/CN100336236C/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5923052A (en) * | 1997-02-12 | 1999-07-13 | Lg Electronics Inc. | Light emitting diode |
| JP2004006957A (en) * | 1999-02-05 | 2004-01-08 | Nippon Telegr & Teleph Corp <Ntt> | Optical semiconductor equipment |
| CN1289152A (en) * | 1999-09-20 | 2001-03-28 | 晶元光电股份有限公司 | Light emitting diode |
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| Publication number | Publication date |
|---|---|
| CN1747187A (en) | 2006-03-15 |
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Effective date of registration: 20091218 Address after: Taoyuan County of Taiwan Province Co-patentee after: LUMENS Limited by Share Ltd. Patentee after: FORMOSA EPITAXY INCORPORATION Address before: Taoyuan County of Taiwan Province Patentee before: Formosa Epitaxy Incorporation |
|
| CX01 | Expiry of patent term |
Granted publication date: 20070905 |