CN1208846C - LED in III group nitride and its manufacturing methods - Google Patents
LED in III group nitride and its manufacturing methods Download PDFInfo
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- CN1208846C CN1208846C CNB021085242A CN02108524A CN1208846C CN 1208846 C CN1208846 C CN 1208846C CN B021085242 A CNB021085242 A CN B021085242A CN 02108524 A CN02108524 A CN 02108524A CN 1208846 C CN1208846 C CN 1208846C
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 63
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000000463 material Substances 0.000 claims abstract description 34
- 230000007850 degeneration Effects 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims description 17
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 12
- 229910002601 GaN Inorganic materials 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910001947 lithium oxide Inorganic materials 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 3
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910003437 indium oxide Inorganic materials 0.000 claims description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 2
- 229910001051 Magnalium Inorganic materials 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- CSBHIHQQSASAFO-UHFFFAOYSA-N [Cd].[Sn] Chemical compound [Cd].[Sn] CSBHIHQQSASAFO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 239000011575 calcium Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- -1 titanium tungsten nitride Chemical class 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims 1
- 238000002161 passivation Methods 0.000 abstract description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 4
- 239000001257 hydrogen Substances 0.000 abstract description 4
- 230000000737 periodic effect Effects 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 80
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 230000008020 evaporation Effects 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 238000010276 construction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910026161 MgAl2O4 Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
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Abstract
The present invention relates to a nitride light emitting diode in a III group in a chemical periodic table. A layer of degeneration contact surface is additionally formed between an active layer and a base plate, wherein the degeneration contact surface is composed of an n+ type layer and a p+ type layer arranged on the n+ type layer. The nitride light emitting diode in the III group can form a form which has an n type at the upper part and a p type at the lower part by the degeneration contact surface, while conductive electrodes on the light emitting diode are all in n type. Because the doping density of the n type nitride of the nitride light emitting diode in the III group is higher than that of the p type nitride materials, the nitride light emitting diode in the III group has good current dispersibility. Moreover, because the exposure part of the p type nitride is reduced, the nitride light emitting diode in the III group can not be affected by the passivation of hydrogen easily.
Description
(1) technical field
The relevant a kind of iii-nitride light emitting devices of the present invention is particularly relevant for the iii-nitride light emitting devices with p form under the last n.
(2) background technology
Light-emitting diode is widely used in the daily life at present, for example aspects such as electronic board, indicator light and inductor.Fig. 1 illustrate is the section of structure of existing III family (in the periodic table of chemical element) iii-nitride light emitting devices.Please refer to Fig. 1, general III group-III nitride light-emitting diode is the form of n under the last p, that is is separated by active layer 18, and the top is that p type structure below is n type structure.And III group-III nitride manufacturing method for LED is as follows: be the resilient coating (buffer layer) 12 that forms low temperature on the substrate 10 of sapphire (sapphire) in regular turn in for example material, material for example is the n type ohmic contact layer 14 of gallium nitride (GaN), material for example is the n type limitation layer 16 of the wide energy gap of aluminium gallium nitride alloy (AlxGa1-xN), active layer 18, material is that the limitation layer 20 and the material of for example p type of the wide energy gap of aluminium gallium nitride alloy (AlxGa1-xN) is for example p type ohmic contact layer 22 of gallium nitride (GaN), wherein, above-mentioned active layer 18 can be the single layer structure of the InGaN (InxGa1-xN) of narrow energy gap, or n the cycle multiple quantum trap structure (n 〉=1) of InGaN/gallium nitride (InxGa1-xN/GaN), promptly finish III group-III nitride epitaxial structure of light-emitting diode.Then, on epitaxial structure, plate the making that conductive electrode 24 and conductive electrode 26 are promptly finished light-emitting diode.The conductive electrode 24 that reaches mentioned herein is to form the metal that good ohmic contacts, for example nickel billon (Ni/Au) for being fit to the p N-type semiconductor N; Conductive electrode 26 then forms the metal that good ohmic contacts, for example titanium-aluminium alloy (Ti/Al) for being fit to the n N-type semiconductor N.
Comprise two conductive electrodes that difference is electrical in the existing III group-III nitride light-emitting diode: the conductive electrode 24 of p type and the conductive electrode 26 of n type.So in the manufacturing process of existing III group-III nitride light-emitting diode, must just can finish the making of metal electrode through twice evaporation step.In addition, in the superiors' structure of existing III group-III nitride light-emitting diode, mostly be p type nitride, p type ohmic contact layer 22 for example, often the doping content than n type nitride is low owing to p type nitride, and can't provide effect electric current peptizaiton.In addition, in the existing III group-III nitride light-emitting diode structure, because p type nitride exposes in the external world, so the time through cleaning or etched step, tend to make external hydrogen ion to pierce p type nitride, make effective carrier concentration of p type nitride reduce, have influence on the characteristics of luminescence of element.Because above-mentioned shortcoming can cause the luminous efficiency of III group-III nitride light-emitting diode not good, therefore how further to promote the luminous efficiency of III group-III nitride light-emitting diode effectively, be still the effort target of everybody expectation.
(3) summary of the invention
In above-mentioned background of invention, the luminous efficiency of existing III group-III nitride light-emitting diode is not good, therefore the purpose of this invention is to provide a kind of new light emitting diode construction and manufacture method thereof, can obtain electric current dispersibility preferably, and more be not vulnerable to the effect of hydrogen passivation (passivation), and can reduce the evaporation step of different electrical metal electrodes, therefore also reduce the time that element is made simultaneously.
For realizing above-mentioned purpose, III group-III nitride light-emitting diode according to an aspect of the present invention comprises: a substrate; One degeneration knot face is positioned at a side of substrate, and this degeneration knot face is a diode, and is made of a n+ type layer and a p+ type layer that is positioned on the n+ type layer; One active layer is positioned on the degeneration knot face; One p type epitaxial structure is between active layer and degeneration knot face; One the one n type epitaxial structure is positioned on the active layer; And one the one n type conductive electrode be positioned on the n type epitaxial structure.
Wherein, another the 2nd n type conductive electrode of the present invention can be positioned at the opposite side of substrate or be positioned on the n type ohmic contact layer with exposed surface.In addition, the material of above-mentioned n+ type layer is to can be selected from n+ single layer structure or n+ superlattice structure, and the material of p+ type layer is to can be selected from p+ single layer structure or p+ superlattice structure.In the III group-III nitride light-emitting diode of the present invention, comprise that also a transparent conductive film is between the first n type epitaxial structure and a n type conductive electrode.
III group-III nitride manufacturing method for LED according to a further aspect of the invention is characterized in, comprises at least: a substrate is provided; Form a degeneration knot face in a side of this substrate, wherein, this degeneration knot face is a diode, and is made of a n+ type layer and a p+ type layer that is positioned on this n+ type layer; Form an active layer on this degeneration knot face; Form a p type epitaxial structure between this active layer and this degeneration knot face; Form a n type epitaxial structure on this active layer; And form one the one n type conductive electrode and be positioned on the n type epitaxial structure.
III group-III nitride light-emitting diode structure of the present invention and manufacture method thereof have the advantage that reduces Production Time, improves the electric current dispersibility and reduce the hydrogen passivation, help the production and the quality improving of light-emitting diode like this.
For further specifying purpose of the present invention, design feature and effect, the present invention is described in detail below with reference to accompanying drawing.
(4) description of drawings
Fig. 1 is existing III group-III nitride light-emitting diode structure profile;
Fig. 2 is according to III group-III nitride light-emitting diode structure profile of the present invention;
Fig. 3 is that n type ohmic contact layer can be with schematic diagram to p type limitation layer among Fig. 2;
Fig. 4 is the III group-III nitride light emitting diode construction profile according to a preferred embodiment of the present invention; And
Fig. 5 is an III group-III nitride light emitting diode construction profile according to another embodiment of the present invention.
(5) embodiment
Fig. 2 is according to III group-III nitride light-emitting diode structure profile of the present invention.Please refer to Fig. 2, the present invention utilizes III group-III nitride manufacturing method for LED that III group-III nitride light-emitting diode structure is described synchronously.At first, form an epitaxial structure on substrate 50, this extension structure can comprise in regular turn: the n type limitation layer 64 and the n type ohmic contact layer 66 of the p type limitation layer 60 of the resilient coating 52 of low temperature (claiming nucleating layer again), n type ohmic contact layer 54, degeneration knot face (DegenerateJunction) 72, wide energy gap, active layer 62, wide energy gap.Then, the making that the conductive electrode 68 of n type and conductive electrode 70 are promptly finished III group-III nitride light-emitting diode of the present invention on the evaporation.Wherein, the characteristics of III group-III nitride light-emitting diode of the present invention are to form a degeneration knot face 72 in active layer 62 times, by degeneration knot face 72, make element be distinguished by active layer 62, can form the structure of p under the n.Therefore, please refer to Fig. 1 and Fig. 2, III group-III nitride light-emitting diode of the present invention is opposite with existing III group-III nitride light-emitting diode structure polarity, so the polarity of operation bias voltage is also inequality.Wherein, the positive pole of existing structure is added in top electrode, and negative pole is added in bottom electrode; Then for top electrode adds negative pole, bottom electrode adds positive pole to structure of the present invention.
Figure 3 shows that n type ohmic contact layer among Fig. 2 to p type limitation layer can be with schematic diagram, wherein be respectively from left to right: p type limitation layer 60, p+ type layer 58, n+ type layer 56 and n type ohmic contact layer 54.Please refer to Fig. 3, when light-emitting diode is subjected to instead partially the time, p+-n+ knot face becomes precipitous, makes electronics can penetrate into the n+ conduction band easily by the valence band of p+, shown in arrow 74.In other words, promptly be equivalent to the hole toward moving to p type limitation layer 60 in the other direction, toward the active layer donate holes, shown in arrow 76.So if these degeneration knot face 72 concentration are enough high, membrane quality enough well, then this p+-n+ knot face promptly is equivalent to a very little linear resistance, forward drop is changed little, but the light-emitting diode framework that can make down p go up n is realized smoothly, will be more helpful to the light characteristic of element.
Because in the III group-III nitride light-emitting diode of the present invention, the element the superiors are high concentration n N-type semiconductor N material (n type ohmic contact layer 66) and the contacting of metal material (conductive electrode 70), in the existing structure than Fig. 1, low concentration p N-type semiconductor N material (p type ohmic contact layer 22) comes lowly with the contact resistance of metal material (conductive electrode 24) like this.Advantage of the present invention can compensate this impedance that is had more because of degeneration knot face 72, even make that the forward drop of whole light-emitting diode is littler.
In a preferred embodiment of the present invention, for the element characteristic that makes light-emitting diode more complete, therefore can at evaporation conductive electrode 70 before n type ohmic contact layer 66, plate the transparent conductive film 78 that layer of transparent, high conductivity and work function and n type ohmic contact layer 66 are fit to earlier.The effect of this transparent conductive film 78 is to make that the electric current of crystal grain integral body is uniformly dispersed, and must possess the penetrance more than 80%, avoids the photon of forward direction transmission is covered, as shown in Figure 4.
In the III group-III nitride light-emitting diode of the present invention, the material of substrate 50 can be selected from sapphire, lithia calcium (LiCaO2), lithia aluminium (LiAlO2), oxidation magnalium (MgAl2O4), carborundum (SiC), silicon (Si), GaAs (GaAs) and one of aluminum indium gallium nitride (AlGaInN) formation.Epitaxial structure is to be made of the III group-III nitride, and wherein the material of resilient coating 52 can be aluminum indium gallium nitride (AlxGayInzN, wherein 0≤x, y, z≤1 and x+y+z=1), with the gallium nitride is preferred materials, but resilient coating 52 is impurity also, as silicon or magnesium (Mg), but so that doping person is not preferable; And n type ohmic contact layer 54, degeneration knot face 72, p type limitation layer 60, active layer 62, n type limitation layer 64 and n type ohmic contact layer 66 etc. also can be made of aluminum indium gallium nitride (AlxGayInzN, wherein 0≤x, y, z≤1 and x+y+z=1).Wherein, each layer formed, that is x value, y value and z value, decided by the emission wavelength and the element electrical characteristics of design entirely.The material that forms degeneration knot face 72 must be done a choice, when the energy gap of material more hour, it easily forms being with of degenerating, but must avoid the resorbent phenomenon of institute's photon that causes when energy gap is narrow also, so the selection of must trying one's best can make the knot face degenerate and not absorb the material that active layer sends photon.In addition, p type limitation layer 60 also must with effective limitation carrier, improve luminous efficiency greater than active layer 62 with the energy gap of n type limitation layer 64.In addition, active layer 62 can be than p type limitation layer 60 and the little narrow energy gap single layer structure of n type limitation layer 64 energy gap, also can be the periodic structure that multilayer size energy gap replaces, behind collocation p type limitation layer 60 or the n type limitation layer 64, can form double heterojunction face light-emitting diode or multiple quantum trap light-emitting diode.Wherein the number of quantum well can be changed to 30 by 1, but to have 1 light-emitting diode to 10 quantum well, its luminous efficiency is preferable.And the material that is plated in the transparent conductive film 78 on the n type ohmic contact layer 66 is plated in p section bar material person and is not quite similar with existing, can be any material in titanium-aluminium alloy (Ti/Al), indium oxide (In2O3), tin oxide (SnO2), tin indium oxide (ITO), cadmium tin (CTO), zinc oxide (ZnO) or the titanium tungsten nitride (TiWN).The conductive electrode 68 of n type is optional in single-layer metal and alloys thereof such as titanium, aluminium, gold with the material of conductive electrode 70.
Figure 5 shows that III group-III nitride light emitting diode construction profile according to another embodiment of the present invention.If substrate 50 is the electrically-conductive backing plates that material constituted such as carborundum, GaAs or silicon by the n type, then the present invention is made into structure as Fig. 5 with light-emitting diode, to save the area of crystal grain.Wherein, the structure of each layer is roughly identical with Fig. 2, having epitaxial structure on substrate 50, for example is resilient coating 52, n type ohmic contact layer 54, degeneration knot face 72 (n+ type layer 56 and p+ type layer 58), p type limitation layer 60, active layer 62, n type limitation layer 64, n type ohmic contact layer 66 and transparent conductive film 78.In addition, do not have the conductive electrode 68 that a side of epitaxial structure has the n type at substrate 50, and the conductive electrode 70 of another n type is to be formed on the transparent conductive film 78.This III group-III nitride light-emitting diode of the present invention must be considered its conductivity when growth resilient coating 52, so resilient coating 52 must Doped n-type impurity.
The conductive electrode 68 of III group-III nitride light-emitting diode of the present invention is all the n type with conductive electrode 70, and can be in same step the evaporation same material, to reduce the time that element is made.If but with the conductive board made, and serve as the light-emitting diode of saving area, though conductive electrode 68 is all the n type with conductive electrode 70 and can be made of same metal, the evaporation step is with the formation electrode at twice.The superiors of component structure of the present invention are n type nitride material (n type ohmic contact layer 66), and its concentration that can mix is than p type nitride material height, so can obtain electric current dispersibility preferably than existing structure.And the outside of the whole light-emitting diode of the present invention, except the side of epitaxial structure, other are exposed to extraneous part and are all n type nitride material, as n type ohmic contact layer 54 and n type ohmic contact layer 66, by in the former study as can be known, n type nitride is not vulnerable to the hydrogen passivation than p type nitride, so be difficult for influencing the element characteristic of light-emitting diode in manufacturing process.
Understand as the person skilled in the art, the above only is preferred embodiment of the present invention, is not in order to limit claim of the present invention; All other do not break away from that equivalence that disclosed spirit finishes changes or equivalence is replaced, and all should be included in the scope of patent protection that claims limit.
Claims (10)
1. an III group-III nitride light-emitting diode is characterized in that, comprises at least:
One substrate;
One degeneration knot face is positioned at a side of this substrate, should degeneration knot face be a diode wherein, and is made of a n+ type layer and a p+ type layer that is positioned on this n+ type layer;
One active layer is positioned on this degeneration knot face;
One p type epitaxial structure is between this active layer and this degeneration knot face;
One n type epitaxial structure is positioned on this active layer; And
One the one n type conductive electrode is positioned on this n type epitaxial structure.
2. III group-III nitride light-emitting diode as claimed in claim 1 is characterized in that the material of described substrate can be selected from one of sapphire, lithia calcium, lithia aluminium, oxidation magnalium, carborundum, silicon, GaAs and aluminum indium gallium nitride.
3. III group-III nitride light-emitting diode as claimed in claim 1 is characterized in that, also comprise a n type ohmic contact layer that exposes a surface, and one the 2nd n type conductive electrode is to be positioned on this surface of this n type ohmic contact layer.
4. III group-III nitride light-emitting diode as claimed in claim 1 is characterized in that, comprises that also one the 2nd n type conductive electrode is positioned at the opposite side of this substrate.
5. III group-III nitride light-emitting diode as claimed in claim 1 is characterized in that, described p type epitaxial structure, this n type epitaxial structure, is to be Al by aluminum indium gallium nitride with this degeneration knot face
xGa
yIn
zN constitutes, and 0≤x, y, z≤1, and x+y+z=1.
6. III group-III nitride light-emitting diode as claimed in claim 1, it is characterized in that, the material of described n+ type layer can be selected from the group that a n+ individual layer and n+ superlattice are formed, and the material of this p+ type layer can be selected from the group that a p+ individual layer and p+ superlattice are formed.
7. III group-III nitride light-emitting diode as claimed in claim 1, it is characterized in that, also comprise a transparent conductive film between this a n type epitaxial structure and a n type conductive electrode, and the material of this transparent conductive film is to can be selected from one of titanium-aluminium alloy, indium oxide, tin oxide, tin indium oxide, cadmium tin, zinc oxide and titanium tungsten nitride.
8. III group-III nitride light-emitting diode as claimed in claim 1, it is characterized in that, described active layer can be selected from a group that is made up of double heterojunction face structure and multiple quantum trap structure, and the material of a n type conductive electrode can be selected from a group that is made up of titanium, aluminium, gold monolayers metal and alloy thereof.
9. an III group-III nitride manufacturing method for LED is characterized in that, comprises at least:
One substrate is provided;
Form a degeneration knot face in a side of this substrate, wherein, this degeneration knot face is a diode, and is made of a n+ type layer and a p+ type layer that is positioned on this n+ type layer;
Form an active layer on this degeneration knot face;
Form a p type epitaxial structure between this active layer and this degeneration knot face;
Form a n type epitaxial structure on this active layer; And
Forming one the one n type conductive electrode is positioned on the n type epitaxial structure.
10. III group-III nitride manufacturing method for LED as claimed in claim 9 is characterized in that, also comprises forming a transparent conductive film between this a n type epitaxial structure and a n type conductive electrode.
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| CNB021085242A CN1208846C (en) | 2002-03-27 | 2002-03-27 | LED in III group nitride and its manufacturing methods |
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| CNB021085242A CN1208846C (en) | 2002-03-27 | 2002-03-27 | LED in III group nitride and its manufacturing methods |
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| KR100662191B1 (en) * | 2004-12-23 | 2006-12-27 | 엘지이노텍 주식회사 | Nitride semiconductor LED and fabrication method thereof |
| CN101222015B (en) * | 2008-01-19 | 2010-05-12 | 鹤山丽得电子实业有限公司 | Light emitting diode, packaging structure with the same and its manufacturing method |
| CN102664227B (en) * | 2012-04-27 | 2015-12-02 | 杭州士兰明芯科技有限公司 | Semiconductor light emitting diode device and forming method thereof |
| CN103022296B (en) * | 2012-11-30 | 2015-08-19 | 华南师范大学 | A kind of semiconductor extension structure and luminescent device thereof |
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