CN1208846C - LED in III group nitride and its manufacturing methods - Google Patents
LED in III group nitride and its manufacturing methods Download PDFInfo
- Publication number
- CN1208846C CN1208846C CNB021085242A CN02108524A CN1208846C CN 1208846 C CN1208846 C CN 1208846C CN B021085242 A CNB021085242 A CN B021085242A CN 02108524 A CN02108524 A CN 02108524A CN 1208846 C CN1208846 C CN 1208846C
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- emitting diode
- iii
- degeneration
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 63
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000000463 material Substances 0.000 claims abstract description 34
- 230000007850 degeneration Effects 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims description 17
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 12
- 229910002601 GaN Inorganic materials 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910001947 lithium oxide Inorganic materials 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 3
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910003437 indium oxide Inorganic materials 0.000 claims description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 2
- 229910001051 Magnalium Inorganic materials 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- CSBHIHQQSASAFO-UHFFFAOYSA-N [Cd].[Sn] Chemical compound [Cd].[Sn] CSBHIHQQSASAFO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 239000011575 calcium Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- -1 titanium tungsten nitride Chemical class 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims 1
- 238000002161 passivation Methods 0.000 abstract description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 4
- 239000001257 hydrogen Substances 0.000 abstract description 4
- 230000000737 periodic effect Effects 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 80
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 230000008020 evaporation Effects 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 238000010276 construction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910026161 MgAl2O4 Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
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Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB021085242A CN1208846C (en) | 2002-03-27 | 2002-03-27 | LED in III group nitride and its manufacturing methods |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB021085242A CN1208846C (en) | 2002-03-27 | 2002-03-27 | LED in III group nitride and its manufacturing methods |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1447447A CN1447447A (en) | 2003-10-08 |
CN1208846C true CN1208846C (en) | 2005-06-29 |
Family
ID=28048513
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021085242A Expired - Lifetime CN1208846C (en) | 2002-03-27 | 2002-03-27 | LED in III group nitride and its manufacturing methods |
Country Status (1)
Country | Link |
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CN (1) | CN1208846C (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100662191B1 (en) * | 2004-12-23 | 2006-12-27 | 엘지이노텍 주식회사 | Nitride semiconductor LED and fabrication method thereof |
CN101222015B (en) * | 2008-01-19 | 2010-05-12 | 鹤山丽得电子实业有限公司 | Light emitting diode, packaging structure with the same and its manufacturing method |
CN102664227B (en) * | 2012-04-27 | 2015-12-02 | 杭州士兰明芯科技有限公司 | Semiconductor light emitting diode device and forming method thereof |
CN103022296B (en) * | 2012-11-30 | 2015-08-19 | 华南师范大学 | A kind of semiconductor extension structure and luminescent device thereof |
-
2002
- 2002-03-27 CN CNB021085242A patent/CN1208846C/en not_active Expired - Lifetime
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Publication number | Publication date |
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CN1447447A (en) | 2003-10-08 |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: YUANSHEN PHOTOELECTRIC SCIENCE-TECHNOLOGY CO., LTD Free format text: FORMER NAME OR ADDRESS: LIANQUN SCIENCE AND TECHNOLOGY CO., LTD. |
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Address after: China Taiwan Tainan Science Park Tainan County Township 9 new Dashun Road No. 16 Patentee after: Yuanshen Photoelectric Technology Co., Ltd. Address before: Taiwan province Tainan Science Park 9 Dashun Road No. 10 Patentee before: Lianquan Technology Co., Ltd. |
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C56 | Change in the name or address of the patentee |
Owner name: JINGYUAN PHOTOELECTRIC CO., LTD. Free format text: FORMER NAME OR ADDRESS: YUANSHEN PHOTOELECTRIC SCIENCE-TECHNOLOGY CO., LTD. |
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CP03 | Change of name, title or address |
Address after: Taiwan, Hsinchu, China Science Park five line 5 Patentee after: Jingyuan Optoelectronics Co., Ltd. Address before: China Taiwan Tainan Science Park Tainan County Township 9 new Dashun Road No. 16 Patentee before: Yuanshen Photoelectric Technology Co., Ltd. |
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ASS | Succession or assignment of patent right |
Owner name: EPISKY (XIAMEN) CO., LTD. Free format text: FORMER OWNER: JINGYUAN OPTOELECTRONICS CO., LTD. Effective date: 20110420 |
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Free format text: CORRECT: ADDRESS; FROM: NO. 5, LIHANG 5TH ROAD, HSINCHU SCIENCE AND INDUSTRIAL PARK, TAIWAN, CHINA TO: 361101 NO. 99, XIANGXING ROAD, (XIANG'AN) INDUSTRIAL ZONE, XIAMEN TORCH HIGH-TECH. ZONE, FUJIAN PROVINCE |
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Effective date of registration: 20110420 Address after: 361101 No. 99 Xiang Xiang Road, Xiamen torch hi tech Zone (Xiangan), Fujian Patentee after: EPISKY CORPORATION Address before: Taiwan, Hsinchu, China Science Park five line 5 Patentee before: Jingyuan Optoelectronics Co., Ltd. |
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