CN100356592C - Light-emitting diode and its manufacturing method - Google Patents
Light-emitting diode and its manufacturing method Download PDFInfo
- Publication number
- CN100356592C CN100356592C CNB2004100001496A CN200410000149A CN100356592C CN 100356592 C CN100356592 C CN 100356592C CN B2004100001496 A CNB2004100001496 A CN B2004100001496A CN 200410000149 A CN200410000149 A CN 200410000149A CN 100356592 C CN100356592 C CN 100356592C
- Authority
- CN
- China
- Prior art keywords
- emitting diode
- light
- bond course
- matsurface
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 90
- 238000000034 method Methods 0.000 claims abstract description 40
- 229910052737 gold Inorganic materials 0.000 claims description 125
- 239000011248 coating agent Substances 0.000 claims description 74
- 238000000576 coating method Methods 0.000 claims description 74
- 239000000463 material Substances 0.000 claims description 44
- 229910052804 chromium Inorganic materials 0.000 claims description 36
- 239000013078 crystal Substances 0.000 claims description 30
- 230000006911 nucleation Effects 0.000 claims description 30
- 238000010899 nucleation Methods 0.000 claims description 30
- 229910000943 NiAl Inorganic materials 0.000 claims description 24
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 claims description 24
- 229910052763 palladium Inorganic materials 0.000 claims description 24
- 238000004381 surface treatment Methods 0.000 claims description 22
- 229910002601 GaN Inorganic materials 0.000 claims description 19
- 230000002262 irrigation Effects 0.000 claims description 19
- 238000003973 irrigation Methods 0.000 claims description 19
- 229910010421 TiNx Inorganic materials 0.000 claims description 18
- 229910052726 zirconium Inorganic materials 0.000 claims description 18
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 16
- 229910052779 Neodymium Inorganic materials 0.000 claims description 14
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 11
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 9
- 229910052718 tin Inorganic materials 0.000 claims description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 239000011787 zinc oxide Substances 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 230000003139 buffering effect Effects 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- 229910005540 GaP Inorganic materials 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 12
- 238000010276 construction Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 230000002950 deficient Effects 0.000 description 4
- -1 gallium nitride compound Chemical class 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000005457 optimization Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000004575 stone Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- BEQNOZDXPONEMR-UHFFFAOYSA-N cadmium;oxotin Chemical compound [Cd].[Sn]=O BEQNOZDXPONEMR-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
Images
Abstract
The present invention relates to a light emitting diode and a manufacture method thereof. The light emitting diode is composed of a substrate, an active layer, a lower bound layer, an upper bound layer, an anode electrode and a cathode electrode, wherein the lower bound layer is positioned on the substrate, the active layer is positioned on the lower bound layer, the upper bound layer is positioned on the active layer, the anode electrode is positioned on the upper bound layer, and the cathode electrode is positioned on the lower bound layer and isolated from the upper bound layer, the active layer and the anode electrode. Each interface between the substrate and the lower bound layer, between the lower bound layer and the active layer, between the active layer and the upper bound layer, between the upper bound layer and the anode electrode, and between the lower bound layer and the cathode electrode is all even rugged faces. The present invention can avoid that the light emitted from the active layer generates total reflection in the light emitting diode. Besides, the present invention can increase the light emitting efficiency of the light emitting diode to be more practical.
Description
Technical field
The present invention relates to a kind of light-emitting diode (lighte mitting diode that constitutes by III-V family element (III-V group element), be called for short LED) and manufacture method, particularly relate to a kind of may command the decline light-emitting diode and the manufacture method thereof of type rough surface.
Background technology
The light-emitting diode that III-V family element constitutes is the material of a kind of wide energy gap (bandgap), its emission wavelength is contained ruddiness from ultraviolet light always, therefore can be described as the wave band of almost containing all visible lights, wherein gallium nitride (GaN) light-emitting diode component is gazed at deeply.Seeing also shown in Figure 1ly, is existing known a kind of light emitting diode construction schematic diagram with gallium nitride compound semiconductor.
See also shown in Figure 1ly, the light-emitting diode 100 of this type is formed in the substrate 10, as aluminium oxide (Al
2O
3) substrate.Be crystal nucleation layer (nucleation layer) 12 and the conductive doped resilient coating of N type (n-type conductive buffer layer) 14 in regular turn in the substrate 10.For the active layers (active layer) 18 of one deck as illuminating to be arranged, and be formed with down bond course (confinement layer) 16 and 20 thereon respectively on the resilient coating 14.The doping type of this bond course 16,20 is opposite, as shown in FIG., and the gallium nitride (n-GaN) that following bond course 16 mixes for the N type, and go up the gallium nitride (p-GaN) that bond course 20 mixes for the P type.Afterwards, on last bond course 20, formed contact layer 22, the gallium nitride that it mixes for the P type.Then, form transparency electrode 24 again, the material that forms this transparency electrode is generally the N type and mixes, as tin indium oxide (Indiumtin oxide), tin oxide cadmium (Cadmiumtin oxide) or metal as thin as a wafer, and as the anode of light-emitting diode 100.In addition, on the zone that resilient coating 14 and bond course 16, bond course 20, active layers 18 are isolated, form electrode 26, as the negative electrode of light-emitting diode 100.
Then, seeing also shown in Figure 2ly, is the schematic diagram of the light-emitting zone scope of the light-emitting diode among Fig. 1.When the electrode 24,26 at light-emitting diode 100 applied forward bias voltage drop, this light-emitting diode just can conducting.At this moment, electric current flows to active layers 18 by electrode 24.Yet,, wherein have part light to produce the phenomenons of total reflections, so the light loss that it caused will significantly reduce the luminous efficiency of light-emitting diode 100 in light-emitting diode 100 inside because the light that active layers 18 is sent is as shown in the figure.
This shows that above-mentioned existing light-emitting diode and manufacture method thereof still have defective, and demand urgently further being improved.In order to solve the defective of existing light-emitting diode and manufacture method thereof, relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly, but does not see always that for a long time suitable design finished by development, and this obviously is the problem that the anxious desire of relevant dealer solves.
Because the defective that above-mentioned existing light-emitting diode and manufacture method thereof exist, the inventor is based on being engaged in this type of product design manufacturing abundant for many years practical experience and professional knowledge, actively studied innovation, in the hope of founding a kind of new light-emitting diode and manufacture method thereof, can improve general existing light-emitting diode and manufacture method thereof, make it have more practicality.Through constantly research, design, and after studying sample and improvement repeatedly, create the present invention who has practical value finally.
Summary of the invention
The objective of the invention is to, overcome the defective that above-mentioned existing light-emitting diode and manufacture method thereof exist, and provide a kind of new light-emitting diode and manufacture method thereof, technical problem to be solved is the inner generation of the light-emitting diode total reflection that makes it can avoid active layers to send, thereby be suitable for practicality more, and have the value on the industry.
Another object of the present invention is to, a kind of light-emitting diode and manufacture method thereof are provided, technical problem to be solved is to make its luminous efficiency that can increase light-emitting diode, thereby is suitable for practicality more.
The object of the invention to solve the technical problems realizes by the following technical solutions.According to a kind of light-emitting diode that the present invention proposes, framework is in a substrate, and its structure comprises at least: a resilient coating is positioned in this substrate; Once bond course is positioned on this resilient coating, and the interface of this resilient coating and following bond course is one first a regular matsurface; One active layers is positioned on this time bond course, and the interface of this time bond course and this active layers is one second a regular matsurface; Bond course on one is positioned on this active layers, and this active layers is one the 3rd a regular matsurface with the interface that should go up bond course; One anode electrode, position are on this on bond course, and the interface that should go up bond course and this anode electrode is one the 4th matsurface of regularity; And a cathode electrode, be positioned on this buffering, and with this on bond course, this time bond course, this active layers and this anode electrode isolated, wherein the interface of this resilient coating and this cathode electrode is one the 5th a regular matsurface.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid light-emitting diode, the interface of wherein said substrate and this resilient coating are one the 6th regular matsurface.
Aforesaid light-emitting diode, wherein said its more comprises: a crystal nucleation layer, between this substrate and this resilient coating; And a contact layer, on this between bond course and this anode electrode.
Aforesaid light-emitting diode, the interface of wherein said substrate and this crystal nucleation layer are one the 7th regular matsurface.
Aforesaid light-emitting diode, the interface of wherein said crystal nucleation layer and this resilient coating are one the 8th regular matsurface.
Aforesaid light-emitting diode, wherein said crystal nucleation layer material comprises Al
uIn
vGa
1-u-vN, u wherein, v 〉=0; 0≤u+v≤1.
Aforesaid light-emitting diode, the material of wherein said resilient coating comprises Al
cIn
dGa
1-c-dThe not doping material of N, c wherein, d 〉=0; 0≤c+d＜1.
Aforesaid light-emitting diode, the material of wherein said substrate comprise aluminium oxide, carborundum, zinc oxide, silicon base, gallium phosphide, GaAs one of them.
Aforesaid light-emitting diode, the material of wherein said active layers comprise the quantum well structures based on III-V family element.
Aforesaid light-emitting diode, wherein said quantum well structures comprises Al
aIn
bGa
1-a-bN/Al
xIn
yGa
1-x-yN, a wherein, b 〉=0; 0≤a+b＜1; X, y 〉=0; 0≤x+y＜1; X＞c＞a.
Aforesaid light-emitting diode, the material of wherein said cathode electrode comprises Ti/Al at least, Ti/Al/Ti/Au, Ti/Al/Pt/Au, Ti/Al/Ni/Au, Ti/Al/Pd/Au, Ti/Al/Cr/Au, Ti/Al/Co/Au, Cr/Au, Cr/Pt/Au, Cr/Pd/Au, Cr/Ti/Au, Cr/TiWx/Au, Cr/Al/Cr/Au, Cr/Al/Pt/Au, Cr/Al/Pd/Au, Cr/Al/Ti/Au, Cr/Al/Co/Au, Cr/Al/Ni/Au, Pd/Al/Ti/Au, Pd/Al/Pt/Au, Pd/Al/Ni/Au, Pd/Al/Pd/Au, Pd/Al/Cr/Au, Pd/Al/Co/Au, Nd/Al/Pt/Au, Nd/Al/Ti/Au, Nd/Al/Ni/Au, Nd/Al/Cr/Au Nd/Al/Co/Au, Hf/Al/Ti/Au, Hf/Al/Pt/Au, Hf/Al/Ni/Au, Hf/Al/Pd/Au, Hf/Al/Cr/Au, Hf/Al/Co/Au, Zr/Al/Ti/Au, Zr/Al/Pt/Au, Zr/Al/Ni/Au, Zr/Al/Pd/Au, Zr/Al/Cr/Au, Zr/Al/Co/Au, TiNx/Ti/Au, TiNx/Pt/Au, TiNx/Ni/Au, TiNx/Pd/Au, TiNx/Cr/Au, TiNx/Co/AuTiWNx/Ti/Au, TiWNx/Pt/Au, TiWNx/Ni/Au, TiWNx/Pd/Au, TiWNx/Cr/Au, TiWNx/Co/Au, NiAl/Pt/Au, NiAl/Cr/Au, NiAl/Ni/Au, NiAl/Ti/Au, Ti/NiAl/Pt/Au, Ti/NiAl/Ti/Au, Ti/NiAl/Ni/Au, Ti/NiAl/Cr/Au one of them.
Aforesaid light-emitting diode, the material of wherein said anode electrode comprise Ni/Au, Ni/Pt, Ni/Pd, Ni/Co, Pd/Au, Pt/Au, Ti/Au, Cr/Au, Sn/Au, Ta/Au, TiN, TiWNx and WSix one of them.
Aforesaid light-emitting diode, the material of wherein said anode electrode comprise a N type oxidic, transparent, conductive layers and a P type oxidic, transparent, conductive layers one of them.
Aforesaid light-emitting diode, wherein said N type oxidic, transparent, conductive layers comprises ITO, CTO, ZnO:Al, ZnGa
2O
4, SnO
2: Sb, Ga
2O
3: Sn, AgInO
2: Sn and In
2O
3: Zn one of them.
Aforesaid light-emitting diode, wherein said P type oxidic, transparent, conductive layers comprises CuAlO
2, LaCuOS, NiO, CuGaO
2And SrCu
2O
2One of them.
Aforesaid light-emitting diode, the pattern of wherein said first matsurface, second matsurface, the 3rd matsurface, the 4th matsurface and the 5th matsurface comprises several irrigation canals and ditches.
Aforesaid light-emitting diode, the spacing between wherein said those irrigation canals and ditches is between the 1-10 micron.
Aforesaid light-emitting diode, the pattern of wherein said first matsurface, second matsurface, the 3rd matsurface, the 4th matsurface and the 5th matsurface comprises several openings.
Aforesaid light-emitting diode, the shape of wherein said those openings comprise ellipse, long strip type, square, circular, triangle one of them.
Aforesaid light-emitting diode, wherein said light-emitting diode is characterized in that spacing between wherein said those openings is between the 1-10 micron.
Aforesaid light-emitting diode, the wherein said material of bond course down comprises the gallium nitride that the N type mixes and is somebody's turn to do the gallium nitride that the material that goes up bond course comprises that the P type mixes.
The object of the invention to solve the technical problems also adopts following technical scheme to realize.According to a kind of manufacturing method for LED that the present invention proposes, it may further comprise the steps:
One substrate is provided;
A surface treatment is carried out in this substrate, made the surface of this substrate become a regular matsurface;
Forming bond course on conformal bond course once, the active layers and in this substrate in regular turn;
On this, form an anode electrode on the bond course; And
On this time bond course, form a cathode electrode, and this cathode electrode is with upward bond course, this active layers and this anode electrode are isolated mutually.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid light-emitting diode wherein saidly carries out this surface-treated step to this substrate and comprises and implement a little shadow/etch process.
Aforesaid light-emitting diode wherein saidly carries out this surface-treated step to this substrate and comprises: form a sedimentary deposit in this substrate; And this sedimentary deposit implemented a little shadow/etch process.
Aforesaid light-emitting diode, the pattern of wherein said matsurface comprises several irrigation canals and ditches.
Aforesaid light-emitting diode, the pattern of wherein said matsurface comprises several openings.
Aforesaid light-emitting diode, the shape of wherein said those openings comprise ellipse, triangle, circle, square one of them.
Aforesaid light-emitting diode wherein saidly carries out more comprising after this surface treatment to this substrate: form a crystal nucleation layer in this substrate; And on this crystal nucleation layer, form a resilient coating.
Aforesaid light-emitting diode wherein saidly forms on the bond course before this anode electrode on this, more comprises forming a contact layer on bond course on this.
The object of the invention to solve the technical problems realizes by the following technical solutions.According to a kind of manufacturing method for LED that the present invention proposes, it may further comprise the steps:
One substrate is provided;
In this substrate, form a resilient coating;
This resilient coating is carried out a surface treatment, make the surface of this resilient coating become a regular matsurface;
Forming bond course on conformal bond course once, the active layers and on this resilient coating in regular turn;
On this, form an anode electrode on the bond course; And
On this resilient coating, form a cathode electrode, and this cathode electrode is with upward bond course, this time bond course, this active layers and this anode electrode are isolated mutually.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid light-emitting diode wherein saidly carries out this surface-treated step to this resilient coating and comprises and implement a micro-photographing process.
Aforesaid light-emitting diode, the pattern of wherein said matsurface comprises several irrigation canals and ditches.
Aforesaid light-emitting diode, the pattern of wherein said matsurface comprises several openings.
Aforesaid light-emitting diode, the shape of wherein said those openings comprise ellipse, triangle, circle, square one of them.
Aforesaid light-emitting diode, wherein said before forming this resilient coating in this substrate, more be included in and form a crystal nucleation layer in this substrate.
Aforesaid light-emitting diode wherein saidly forms on the bond course before this anode electrode on this, more comprises forming a contact layer on bond course on this.
The present invention compared with prior art has tangible advantage and beneficial effect.By above technical scheme as can be known, in order to reach aforementioned goal of the invention, major technique of the present invention thes contents are as follows:
The present invention proposes a kind of light-emitting diode, be a kind of framework in a suprabasil light-emitting diode, its structure comprises an active layers, once bond course, anode electrode and cathode electrode on the bond course, at least.In the above-mentioned light emitting diode construction each configuration of components be that down bond course is positioned in the substrate, active layers is positioned at down on the bond course, go up that bond course is positioned on the active layers, anode electrode is positioned on the bond course, cathode electrode then be positioned at down on the bond course and with last bond course, active layers and anode electrode isolation.Wherein, substrate is regular matsurface with the interface of the interface of interface, active layers and the last bond course of the interface of following bond course, following bond course and active layers, the interface of going up bond course and anode electrode and following bond course and cathode electrode.
The present invention also proposes a kind of framework in a suprabasil light-emitting diode, and it comprises the last bond course and following bond course, a resilient coating, anode electrode and cathode electrode of an active layers, different conductivity types at least.Each configuration of components is that resilient coating is positioned at that the upper and lower bond course of substrate is positioned on the resilient coating in the above-mentioned light emitting diode construction, active layers is positioned at down on the bond course, go up that bond course is positioned on the active layers, the anode electrode position on last bond course, cathode electrode then is positioned on the buffering and bond course, bond course, active layers and anode electrode isolation down on this.Wherein, buffering is regular matsurface with the interface of interface, the interface of going up bond course and anode electrode and the resilient coating and the cathode electrode of interface, active layers and the last bond course of the interface of following bond course, following bond course and active layers.
The present invention proposes a kind of manufacturing method for LED again, and it comprises provides a substrate earlier.Then, a surface treatment is carried out in substrate, made its surface become regular matsurface.Then, form in regular turn in the substrate conformal following bond course, active layers and on bond course.Then, form on the last bond course anode electrode and on the bond course down and with the zone of last bond course, active layers and anode electrode isolation on form cathode electrode.
In addition, the present invention reintroduces a kind of manufacturing method for LED, and it comprises provides a substrate earlier, forms a resilient coating again in substrate.Then, resilient coating is carried out a surface treatment, make its surface become regular matsurface.Then, form in regular turn on the resilient coating conformal following bond course, active layers and on bond course.Then, form on the last bond course anode electrode and on the conductive isolation layer and with last bond course, formation one cathode electrode on the zone that isolates of bond course, active layers and anode electrode down.
Via as can be known above-mentioned, the invention relates to a kind of light-emitting diode and manufacture method thereof, it is made up of substrate, active layers, time bond course, last bond course, anode electrode and cathode electrode.Following bond course is positioned in the substrate, active layers is positioned at down on the bond course, go up that bond course is positioned on the active layers, anode electrode is positioned on the bond course, cathode electrode is positioned on the bond course and isolated with last bond course, active layers and anode electrode.And substrate and following bond course, down bond course and active layers, active layers and last bond course, go up the matsurface that each interface between bond course and anode electrode and time bond course and the cathode electrode is regularity.
By technique scheme, light-emitting diode of the present invention and manufacture method thereof have the following advantages at least: the present invention is because carried out surface treatment to substrate earlier before making light-emitting diode, or during processing procedure, resilient coating is carried out surface treatment, make its surface become the matsurface of a regularity, on this matsurface, form other epitaxial layer afterwards more in regular turn, make the light-emitting diode component surface be similarly the matsurface of a regularity, so just can avoid the phenomenon of the light generation total reflection that active layers sends, and then can increase the luminous efficiency of light-emitting diode.In addition, the present invention is when carrying out surface treatment, spacing (pitch) between formed irrigation canals and ditches of may command or the opening, the control of this spacing and the external quantum efficiency of light-emitting diode component have direct connection, therefore only need to control at the irrigation canals and ditches or the conditional parameter of the spacing of opening and follow-up brilliant processing procedure of heap of stone, can make the external quantum efficiency optimization of light-emitting diode of the present invention, thereby be suitable for practicality more.
In sum, light-emitting diode that the present invention is special and manufacture method thereof, the inner generation of the light-emitting diode total reflection that can avoid active layers to send; Can increase the luminous efficiency of light-emitting diode in addition, thereby be suitable for practicality more.It has above-mentioned many advantages and practical value, and in like product and manufacture method, do not see similar structural design and method to publish or use and really genus innovation, no matter it all has bigger improvement on product structure, manufacture method or function, have large improvement technically, and produced handy and practical effect, and more existing light-emitting diode and manufacture method thereof have the multinomial effect of enhancement, thereby be suitable for practicality more, and have the extensive value of industry, really be a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, below with preferred embodiment of the present invention and conjunction with figs. describe in detail as after.
Description of drawings
Fig. 1 is existing known a kind of light emitting diode construction schematic diagram with gallium nitride compound semiconductor.
Fig. 2 is the light-emitting zone scope schematic diagram of light-emitting diode among Fig. 1.
Fig. 3 is the manufacturing process block diagram according to the light-emitting diode of first embodiment of the invention.
Fig. 4 is according to the light-emitting diode structure of first embodiment of the invention made and light-emitting zone scope schematic diagram.
Fig. 5 is the manufacturing process block diagram according to the light-emitting diode of second embodiment of the invention.
Fig. 6 is according to the light-emitting diode structure of second embodiment of the invention made and light-emitting zone scope schematic diagram.
10,40,60: substrate
12,412,612: crystal nucleation layer
14,414,614: resilient coating
16,20,416,420,616,620: bond course
18,418,618: active layers
22,422,622: contact layer
24: transparency electrode
26,424,426,624,626: electrode
100: light-emitting diode
300,500: a substrate is provided
302: a surface treatment is carried out in substrate, made its surface become regular matsurface
304: form in regular turn in the substrate conformal following bond course, active layers and on bond course
306,508: on last bond course, form an anode electrode
308: form a cathode electrode on the zone that on following bond course and with last bond course, active layers and anode electrode, isolates
502: in substrate, form a resilient coating
504: resilient coating is carried out a surface treatment, make its surface become regular matsurface
506: form in regular turn on the resilient coating conformal following bond course, active layers and on bond course
510: on the resilient coating and with following bond course, on form a cathode electrode on the zone that isolates of bond course, active layers and anode electrode
Embodiment
Below in conjunction with accompanying drawing and preferred embodiment, to light-emitting diode and its concrete structure of manufacture method, manufacture method, step, feature and the effect thereof that foundation the present invention proposes, describe in detail as after.
Main concept of the present invention is to utilize to make during the light-emitting diode, surface treatment is carried out in substrate or resilient coating, make its surface become the matsurface of a regularity, each layer that causes follow-up formation is all conformal with substrate or resilient coating and matsurface with rule with the light of avoiding active layers to be sent total reflection takes place in light-emitting diode.Formed transistor arrangement of notion and manufacture method thereof have two kinds of kenels at least according to this.Below will cooperate Fig. 3, Fig. 4 and Fig. 5, Fig. 6 to do further explanation.
First embodiment
Fig. 3 is the manufacturing process block diagram according to the light-emitting diode of first embodiment of the invention.
See also shown in Figure 3ly, the manufacturing method for LED of preferred embodiment of the present invention at first in step 300, provides a substrate, and the material of this substrate can be aluminium oxide (Al
2O
3), carborundum (SiC), zinc oxide (ZnO), silicon (Si) substrate, gallium phosphide (GaP), GaAs (GaAs) etc. or other substrate material that is suitable for.Then, in step 302, a surface treatment is carried out in substrate, make its surface become regular matsurface, wherein the surface-treated mode being carried out in substrate for example is to implement a little shadow/etch process, so that have regular pattern on the surface of substrate, be opening that array (array) arranges etc. as several irrigation canals and ditches or several.In addition, the surface-treated mode is carried out in substrate also can comprise formation one deck sedimentary deposit in substrate earlier, again this sedimentary deposit is implemented another little shadow/etch process,, be the opening of arrayed etc. as several irrigation canals and ditches or several so that the sedimentary deposit on the substrate surface has regular pattern.And when present embodiment when surface treatment is carried out in substrate, spacing (pitch) between formed irrigation canals and ditches of may command or the opening, the control of this spacing and the external quantum efficiency of light-emitting diode component have direct connection, its scope for example between 1-10 micron (μ m), is preferably between the 1-5 micron.Therefore, the present invention only needs to control at the irrigation canals and ditches or the conditional parameter of the spacing of opening and follow-up brilliant processing procedure of heap of stone, can make the external quantum efficiency optimization of light-emitting diode.
Then, in step 304, form conformal following bond course, active layers (active layer) in regular turn and go up bond course in substrate, wherein the material of active layers comprises a quantum well (quantum well) structure based on III-V family element, and this quantum well structures for example is Al
aIn
bGa
1-a-bN/Al
xIn
yGa
1-x-yN, a wherein, b 〉=0; 0≤a+b＜1; X, y 〉=0; 0≤x+y＜1; X＞c＞a.And bond course for example is the gallium nitride (n-GaN) that the N type mixes down, for example is the gallium nitride (p-GaN) that the P type mixes and go up bond course.
In addition, because P or n type gallium nitride series semiconductor and above-mentioned substrate lattice matching commonly used still have the space of improvement, therefore under forming, can form one deck crystal nucleation layer (nucleation layer) earlier on substrate before the bond course, on crystal nucleation layer, form a resilient coating (bufferlayer) again, to improve the quality that follow-up gallium nitride series compound crystal is grown up, simultaneously also improve the product fine rate, wherein the material of crystal nucleation layer comprises Al
uIn
vGa
1-u-vN (u, v 〉=0; 0≤u+v≤1), the material of resilient coating then can be used for example Al
cIn
dGa
1-c-dN (c, d 〉=0; 0≤c+d＜1) etc. not doping material.
Afterwards, in step 306, form an anode electrode on last bond course, its material is a metal for example, for example Ni/Au, Ni/Pt, Ni/Pd, Ni/Co, Pd/Au, Pt/Au, Ti/Au, Cr/Au, Sn/Au, Ta/Au, TiN, TiWNx or WSix etc.Moreover anode electrode also can be oxidic, transparent, conductive layers (transparent conductive oxide, be called for short TCO) for example ITO, CTO, ZnO:Al, the ZnGa of N type
2O
4, SnO
2: Sb, Ga
2O
3: Sn, AgInO
2: Sn, In
2O
3: Zn etc., or the oxidic, transparent, conductive layers of P type CuAlO for example
2, LaCuOS, NiO, CuGaO
2, SrCu
2O
2Or the like.
Subsequently, in step 308, on following bond course and with last bond course, form cathode electrode on the zone that active layers and anode electrode are isolated, wherein the material of cathode electrode comprises Ti/Al at least, Ti/Al/Ti/Au, Ti/Al/Pt/Au, Ti/Al/Ni/Au, Ti/Al/Pd/Au, Ti/Al/Cr/Au, Ti/Al/Co/Au, Cr/Au, Cr/Pt/Au, Cr/Pd/Au, Cr/Ti/Au, Cr/TiWx/Au, Cr/Al/Cr/Au, Cr/Al/Pt/Au, Cr/Al/Pd/Au, Cr/Al/Ti/Au, Cr/Al/Co/Au, Cr/Al/Ni/Au, Pd/Al/Ti/Au, Pd/Al/Pt/Au, Pd/Al/Ni/Au, Pd/Al/Pd/Au, Pd/Al/Cr/Au, Pd/Al/Co/Au, Nd/Al/Pt/Au, Nd/Al/Ti/Au, Nd/Al/Ni/Au, Nd/Al/Cr/Au, Nd/Al/Co/Au, Hf/Al/Ti/Au, Hf/Al/Pt/Au, Hf/Al/Ni/Au, Hf/Al/Pd/Au, Hf/Al/Cr/Au, Hf/Al/Co/Au, Zr/Al/Ti/Au, Zr/Al/Pt/Au, Zr/Al/Ni/Au, Zr/Al/Pd/Au, Zr/Al/Cr/Au, Zr/Al/Co/Au, TiNx/Ti/Au, TiNx/Pt/Au, TiNx/Ni/Au, TiNx/Pd/Au, TiNx/Cr/Au, TiNx/Co/AuTiWNx/Ti/Au, TiWNx/Pt/Au, TiWNx/Ni/Au, TiWNx/Pd/Au, TiWNx/Cr/Au, TiWNx/Co/Au, NiAl/Pt/Au, NiAl/Cr/Au, NiAl/Ni/Au, NiAl/Ti/Au, Ti/NiAl/Pt/Au, Ti/NiAl/Ti/Au, Ti/NiAl/Ni/Au or Ti/NiAl/Cr/Au etc.
In addition, before forming anode electrode on the last bond course, can form a contact layer earlier on last bond course, its material for example is the gallium nitride that the P type mixes.
And utilize the light-emitting diode of the produced a kind of framework of the foregoing description in a substrate 40 with and light-emitting zone scope schematic diagram, as shown in Figure 4.
See also shown in Figure 4ly, the present embodiment light-emitting diode comprises an active layers 418, once bond course 420, a crystal nucleation layer 412, a resilient coating 414, a contact layer 422, anode electrode 424 and cathode electrode 426 on the bond course 416.And each configuration of components is that bond course 416 is positioned in the substrate 40 down in the above-mentioned light emitting diode construction, crystal nucleation layer 412 is between substrate 40 and following bond course 416, resilient coating 414 is between crystal nucleation layer 412 and following bond course 416,418 of active layers are positioned on the following bond course 416, last bond course 420 is positioned on the active layers 418, anode electrode 424 is positioned on the bond course 420, contact layer 422 is between last bond course 420 and anode electrode 424,426 of cathode electrodes be positioned at down on the bond course 416 and with last bond course 420, active layers 418 is isolated with anode electrode 424.
Please continue to consult shown in Figure 4, one of key character of present embodiment is, the interface of the interface of substrate 40 and crystal nucleation layer 412, crystal nucleation layer 412 and resilient coating 414, resilient coating 414 and the interface of following bond course 416, down interface, active layers 418 and the last bond course 420 of bond course 416 and active layers 418 the interface, go up the matsurface that bond course 420 and the interface of the interface that contacts 422 interface, contact layer 422 and anode electrode 424 and resilient coating 414 and cathode electrode 426 are regularity.Therefore, the most of light that sends from active layers 418 will directly penetrate from light-emitting diode, and can be in the inner generation of light-emitting diode total reflection.
Second embodiment
The present invention also can utilize and make during the light-emitting diode, and resilient coating is carried out surface treatment, makes its surface become the matsurface of a regularity, with the light of avoiding active layers to be sent total reflection takes place in light-emitting diode.Seeing also Fig. 5, is the manufacturing process block diagram according to the light-emitting diode of the present invention one second embodiment.
See also shown in Figure 5ly, the manufacturing method for LED of present embodiment is at first in step 500, and a substrate is provided, and its material can comprise the substrate material among aforesaid first embodiment.Then, in step 502, form a resilient coating in substrate, its material then can be used for example Al
cIn
dGa
1-c-dN (c, d 〉=0; 0≤c+d＜1) etc. not doping material.Then, in step 504, resilient coating is carried out a surface treatment, make its surface become regular matsurface, wherein this resilient coating being carried out the surface-treated mode for example is to implement a little shadow/etch process, so that have regular pattern on the surface of resilient coating, be the opening of arrayed etc. as several irrigation canals and ditches or several.And when present embodiment when resilient coating is carried out surface treatment, spacing between formed irrigation canals and ditches of may command or the opening, the control of this spacing and the external quantum efficiency of light-emitting diode component have direct connection, its scope is that the preferably is between the 1-5 micron between 1-10 micron (μ m) for example.Therefore, the present invention only needs to control at the irrigation canals and ditches or the conditional parameter of the spacing of opening and follow-up brilliant processing procedure of heap of stone, can make the external quantum efficiency optimization of light-emitting diode.
Then, in step 506, form in regular turn on the resilient coating conformal following bond course, active layers and on bond course, the material that the material of wherein descending bond course for example is the gallium nitride that mixes of N type, go up bond course for example be the material of the gallium nitride that mixes of P type, active layers for example based on a quantum well structures of III-V family element, and this quantum well structures for example is Al
aIn
bGa
1-a-bN/Al
xIn
yGa
1-x-yN, a wherein, b 〉=0; 0≤a+b＜1; X, y 〉=0; 0≤x+y＜1; X＞c＞a.
In addition, because P or n type gallium nitride series semiconductor and above-mentioned substrate lattice matching commonly used still have the space of improvement, so before forming resilient coating, can form one deck crystal nucleation layer earlier on substrate, to improve the quality that follow-up gallium nitride series compound crystal is grown up, simultaneously also improve the product fine rate, wherein the material of crystal nucleation layer comprises Al
uIn
vGa
1-u-vN (u, v 〉=0; 0≤u+v≤1).
Afterwards, in step 508, form an anode electrode on last bond course, its material is the oxidic, transparent, conductive layers (TCO) of metal, N type or the oxidic, transparent, conductive layers of P type for example, and the detailed example of above-mentioned various materials is as described above described in first embodiment.
Subsequently, in step 510, on the resilient coating and with following bond course, on form a cathode electrode on the zone that isolates of bond course, active layers and anode electrode, wherein the material of cathode electrode can comprise the various materials among aforesaid first embodiment.
In addition, before forming anode electrode on the last bond course, can form a contact layer earlier on last bond course, its material for example is the gallium nitride that the P type mixes.
And utilize the light-emitting diode of the produced a kind of framework of the foregoing description in a substrate 60 with and light-emitting zone scope schematic diagram, as shown in Figure 6.
See also shown in Figure 6ly, the light-emitting diode of present embodiment comprises an active layers 618, once bond course 620, a crystal nucleation layer 612, a resilient coating 614, a contact layer 622, anode electrode 624 and cathode electrode 626 on the bond course 616.And each configuration of components is that resilient coating 614 is positioned in the substrate 60 in the above-mentioned light emitting diode construction, crystal nucleation layer 612 is between substrate 60 and resilient coating 614, following bond course 616 is on resilient coating 614,618 of active layers are positioned on the following bond course 616, last bond course 620 is positioned on the active layers 618, anode electrode 624 is positioned on the bond course 620, contact layer 622 is between last bond course 620 and anode electrode 624,626 of cathode electrodes be positioned on the resilient coating 614 and with following bond course 616, last bond course 620, active layers 618 and anode electrode 624 are isolated mutually.
Please continue to consult shown in Figure 6, one of key character of present embodiment is, resilient coating 614 and the interface of following bond course 616, down interface, active layers 618 and the last bond course 620 of bond course 616 and active layers 618 the interface, go up the matsurface that bond course 620 and the interface of the interface that contacts 622 interface, contact layer 622 and anode electrode 624 and resilient coating 614 and cathode electrode 626 are regularity.
In order to confirm effect of the present invention, see also following table one, it is according to the light-emitting diode of the aforementioned first embodiment made and has the power output comparison sheet that known light-emitting diode is obtained now that when the current value that feeds is 20 milliamperes (mA) wherein the unit of power is mW.
Table one
| Light-emitting diode according to the first embodiment made | Existing known light-emitting diode | |||
| Magnitude of voltage (Vf) | Power (power) | Magnitude of voltage (Vf) | Power (power) | |
| 3.21 | 4.86 | 3.08 | 4.766 | |
| 3.15 | 4.234 | 3.15 | 3.936 | |
| 3.15 | 4.958 | 3.15 | 4.317 | |
| 3.34 | 4.819 | 3.15 | 3.753 | |
| 3.28 | 5.242 | 3.15 | 4.132 | |
| 3.15 | 4.777 | 3.15 | 3.872 | |
| 3.28 | 5.543 | 3.15 | 4.321 | |
| 3.34 | 4.951 | 3.15 | 3.734 | |
| 3.34 | 4.66 | 3.15 | 3.691 | |
| 3.21 | 4.906 | 3.15 | 4.43 | |
| 3.28 | 4.702 | 3.15 | 3.621 | |
| 3.21 | 5.094 | 3.15 | 3.974 | |
| 3.15 | 4.562 | 3.15 | 3.857 | |
| 3.28 | 4.713 | 3.15 | 4.223 | |
| 3.15 | 5.102 | 3.15 | 4.679 | |
| 3.15 | 5.449 | 3.15 | 3.925 | |
| 3.28 | 4.389 | 3.15 | 4.426 | |
| 3.28 | 4.547 | 3.15 | 4.034 | |
| 3.34 | 4.728 | 3.15 | 4.026 | |
| 3.28 | 4.464 | |||
| Mean value | Mean value | Promote % | ||
| 4.835 | 4.090368421 | 18.2045112 4 | ||
| Standard deviation | Standard deviation | |||
| 0.336391689 | 0.329110115 | |||
As shown in Table 1, light-emitting diode of the present invention whole effect of about 18.2% that increases of existing known light-emitting diode on power output.
Therefore, characteristics of the present invention are, earlier surface treatment is carried out in substrate before utilizing the making light-emitting diode, or during processing procedure, resilient coating is carried out surface treatment, make its surface become the matsurface of a regularity, so total reflection takes place in light-emitting diode inside in the light that can avoid active layers to send, and then can increase the luminous efficiency of light-emitting diode.
In addition, the present invention when carrying out surface treatment, the spacing (pitch) between formed irrigation canals and ditches of may command or the opening, the control of this spacing and the external quantum efficiency of light-emitting diode component have direct connection.Therefore, the present invention only needs to control at the irrigation canals and ditches or the conditional parameter of the spacing of opening and follow-up brilliant processing procedure of heap of stone, can make the external quantum efficiency optimization of light-emitting diode.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the method that can utilize above-mentioned announcement and technology contents are made a little change or be modified to the equivalent embodiment of equivalent variations, but every content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (36)
1, a kind of light-emitting diode, framework is characterized in that its structure comprises at least in a substrate:
One resilient coating is positioned in this substrate;
Once bond course is positioned on this resilient coating, and the interface of this resilient coating and following bond course is one first a regular matsurface;
One active layers is positioned on this time bond course, and the interface of this time bond course and this active layers is one second a regular matsurface;
Bond course on one is positioned on this active layers, and this active layers is one the 3rd a regular matsurface with the interface that should go up bond course;
One anode electrode, position are on this on bond course, and the interface that should go up bond course and this anode electrode is one the 4th matsurface of regularity; And
One cathode electrode is positioned on this buffering, and with this on bond course, this time bond course, this active layers and this anode electrode isolated, wherein the interface of this resilient coating and this cathode electrode is one the 5th a regular matsurface.
2, light-emitting diode according to claim 1 is characterized in that the interface of wherein said substrate and this resilient coating is one the 6th regular matsurface.
3, light-emitting diode according to claim 1 is characterized in that it more comprises:
One crystal nucleation layer is between this substrate and this resilient coating; And
One contact layer is on this between bond course and this anode electrode.
4, light-emitting diode according to claim 3 is characterized in that the interface of wherein said substrate and this crystal nucleation layer is one the 7th regular matsurface.
5, light-emitting diode according to claim 4 is characterized in that the interface of wherein said crystal nucleation layer and this resilient coating is one the 8th regular matsurface.
6, light-emitting diode according to claim 3 is characterized in that wherein said crystal nucleation layer material comprises Al
uIn
vGa
1-u-vN, u wherein, v 〉=0; 0≤u+v≤1.
7, light-emitting diode according to claim 1 is characterized in that the material of wherein said resilient coating comprises Al
cIn
dGa
1-c-dThe not doping material of N, c wherein, d 〉=0; 0≤c+d＜1.
8, light-emitting diode according to claim 1, the material that it is characterized in that wherein said substrate comprise aluminium oxide, carborundum, zinc oxide, silicon base, gallium phosphide, GaAs one of them.
9, light-emitting diode according to claim 1, the material that it is characterized in that wherein said active layers comprises the quantum well structures based on III-V family element.
10, light-emitting diode according to claim 9 is characterized in that wherein said quantum well structures comprises Al
aIn
bGa
1-a-bN/Al
xIn
yGa
1-x-yN, a wherein, b 〉=0; 0≤a+b＜1; X, y 〉=0; 0≤x+y＜1; X＞c＞a.
11, light-emitting diode according to claim 1 is characterized in that the material of wherein said cathode electrode comprises Ti/Al at least, Ti/Al/Ti/Au, Ti/Al/Pt/Au, Ti/Al/Ni/Au, Ti/Al/Pd/Au, Ti/Al/Cr/Au, Ti/Al/Co/Au, Cr/Au, Cr/Pt/Au, Cr/Pd/Au, Cr/Ti/Au, Cr/TiWx/Au, Cr/Al/Cr/Au, Cr/Al/Pt/Au, Cr/Al/Pd/Au, Cr/Al/Ti/Au, Cr/Al/Co/Au, Cr/Al/Ni/Au, Pd/Al/Ti/Au, Pd/Al/Pt/Au, Pd/Al/Ni/Au, Pd/Al/Pd/Au, Pd/Al/Cr/Au, Pd/Al/Co/Au, Nd/Al/Pt/Au, Nd/Al/Ti/Au, Nd/Al/Ni/Au, Nd/Al/Cr/Au, Nd/Al/Co/Au, Hf/Al/Ti/Au, Hf/Al/Pt/Au, Hf/Al/Ni/Au, Hf/Al/Pd/Au, Hf/Al/Cr/Au, Hf/Al/Co/Au, Zr/Al/Ti/Au, Zr/Al/Pt/Au, Zr/Al/Ni/Au, Zr/Al/Pd/Au, Zr/Al/Cr/Au, Zr/Al/Co/Au, TiNx/Ti/Au, TiNx/Pt/Au, TiNx/Ni/Au, TiNx/Pd/Au, TiNx/Cr/Au, TiNx/Co/Au TiWNx/Ti/Au, TiWNx/Pt/Au, TiWNx/Ni/Au, TiWNx/Pd/Au, TiWNx/Cr/Au, TiWNx/Co/Au, NiAl/Pt/Au, NiAl/Cr/Au, NiAl/Ni/Au, NiAl/Ti/Au, Ti/NiAl/Pt/Au, Ti/NiAl/Ti/Au, Ti/NiAl/Ni/Au, Ti/NiAl/Cr/Au one of them.
12, light-emitting diode according to claim 1, the material that it is characterized in that wherein said anode electrode comprise Ni/Au, Ni/Pt, Ni/Pd, Ni/Co, Pd/Au, Pt/Au, Ti/Au, Cr/Au, Sn/Au, Ta/Au, TiN, TiWNx and WSix one of them.
13, light-emitting diode according to claim 1, the material that it is characterized in that wherein said anode electrode comprise a N type oxidic, transparent, conductive layers and a P type oxidic, transparent, conductive layers one of them.
14, light-emitting diode according to claim 13 is characterized in that wherein said N type oxidic, transparent, conductive layers comprises ITO, CTO, ZnO:Al, ZnGa
2O
4, SnO
2: Sb, Ga
2O
3: Sn, AgInO
2: Sn and In
2O
3: Zn one of them.
15, light-emitting diode according to claim 13 is characterized in that wherein said P type oxidic, transparent, conductive layers comprises CuAlO
2, LaCuOS, NiO, CuGaO
2And SrCu
2O
2One of them.
16, light-emitting diode according to claim 1 is characterized in that the pattern of wherein said first matsurface, second matsurface, the 3rd matsurface, the 4th matsurface and the 5th matsurface comprises several irrigation canals and ditches.
17, light-emitting diode according to claim 16 is characterized in that spacing between wherein said those irrigation canals and ditches is between the 1-10 micron.
18, light-emitting diode according to claim 1 is characterized in that the pattern of wherein said first matsurface, second matsurface, the 3rd matsurface, the 4th matsurface and the 5th matsurface comprises several openings.
19, light-emitting diode according to claim 18, the shape that it is characterized in that wherein said those openings comprise circle, square, oval, triangle one of them.
20, light-emitting diode according to claim 18 is characterized in that spacing between wherein said those openings is between the 1-10 micron.
21, light-emitting diode according to claim 1 is characterized in that the wherein said material of bond course down comprises the gallium nitride that the N type mixes and is somebody's turn to do the gallium nitride that the material that goes up bond course comprises that the P type mixes.
22, a kind of manufacturing method for LED is characterized in that it may further comprise the steps:
One substrate is provided;
A surface treatment is carried out in this substrate, made the surface of this substrate become a regular matsurface;
Forming bond course on conformal bond course once, the active layers and in this substrate in regular turn;
On this, form an anode electrode on the bond course; And
On this time bond course, form a cathode electrode, and this cathode electrode is with upward bond course, this active layers and this anode electrode are isolated mutually.
23, manufacturing method for LED according to claim 22 is characterized in that wherein this surface-treated step being carried out in this substrate comprises execution one little shadow/etch process.
24, manufacturing method for LED according to claim 22 is characterized in that wherein this surface-treated step being carried out in this substrate comprises:
In this substrate, form a sedimentary deposit; And
This sedimentary deposit is implemented a little shadow/etch process.
25, manufacturing method for LED according to claim 22 is characterized in that the pattern of wherein said matsurface comprises several irrigation canals and ditches.
26, manufacturing method for LED according to claim 22 is characterized in that the pattern of wherein said matsurface comprises several openings.
27, manufacturing method for LED according to claim 26, the shape that it is characterized in that wherein said those openings comprise circle, square, oval, triangle one of them.
28, manufacturing method for LED according to claim 22 is characterized in that wherein this substrate is carried out more comprising after this surface treatment:
In this substrate, form a crystal nucleation layer; And
On this crystal nucleation layer, form a resilient coating.
29, manufacturing method for LED according to claim 22 is characterized in that wherein forming before this anode electrode on the bond course on this, more comprises forming a contact layer on bond course on this.
30, a kind of manufacturing method for LED is characterized in that it may further comprise the steps:
One substrate is provided;
In this substrate, form a resilient coating;
This resilient coating is carried out a surface treatment, make the surface of this resilient coating become a regular matsurface;
Forming bond course on conformal bond course once, the active layers and on this resilient coating in regular turn;
On this, form an anode electrode on the bond course; And
On this resilient coating, form a cathode electrode, and this cathode electrode is with upward bond course, this time bond course, this active layers and this anode electrode are isolated mutually.
31, manufacturing method for LED according to claim 30 is characterized in that wherein this resilient coating being carried out this surface-treated step comprises execution one micro-photographing process.
32, manufacturing method for LED according to claim 30 is characterized in that the pattern of wherein said matsurface comprises several irrigation canals and ditches.
33, manufacturing method for LED according to claim 30 is characterized in that the pattern of wherein said matsurface comprises several openings.
34, manufacturing method for LED according to claim 33, the shape that it is characterized in that wherein said those openings comprise circle, square, oval, triangle one of them.
35, manufacturing method for LED according to claim 30 is characterized in that wherein before forming this resilient coating in this substrate, more was included in and formed a crystal nucleation layer in this substrate.
36, manufacturing method for LED according to claim 30 is characterized in that wherein forming before this anode electrode on the bond course on this, more comprises forming a contact layer on bond course on this.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100001496A CN100356592C (en) | 2004-01-06 | 2004-01-06 | Light-emitting diode and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100001496A CN100356592C (en) | 2004-01-06 | 2004-01-06 | Light-emitting diode and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1641890A CN1641890A (en) | 2005-07-20 |
| CN100356592C true CN100356592C (en) | 2007-12-19 |
Family
ID=34866649
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100001496A Expired - Lifetime CN100356592C (en) | 2004-01-06 | 2004-01-06 | Light-emitting diode and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100356592C (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4605193B2 (en) | 2007-07-27 | 2011-01-05 | 豊田合成株式会社 | Group III nitride compound semiconductor device |
| CN101364624B (en) * | 2007-08-07 | 2011-09-07 | 新世纪光电股份有限公司 | Substrate having light compensating cavity and light-emitting element formed thereby |
| CN101471413B (en) * | 2007-12-28 | 2012-06-27 | 晶元光电股份有限公司 | Light-emitting element and method for manufacturing the same |
| CN101621096B (en) * | 2008-06-30 | 2013-07-24 | 晶元光电股份有限公司 | Light-emitting element |
| CN101621098B (en) * | 2008-07-04 | 2012-09-26 | 泰谷光电科技股份有限公司 | Photoelectronic device and manufacturing method thereof |
| DE102008045028B4 (en) * | 2008-08-29 | 2023-03-16 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelectronic semiconductor chip |
| CN101771110B (en) * | 2008-12-29 | 2013-05-01 | 大连美明外延片科技有限公司 | Light-emitting diode and manufacturing method thereof |
| CN101515624B (en) * | 2009-03-31 | 2011-02-16 | 上海蓝光科技有限公司 | Method for manufacturing LED chips |
| CN102054911B (en) * | 2009-10-29 | 2013-03-13 | 比亚迪股份有限公司 | Light-emitting diode chip and manufacturing method thereof and light-emitting diode with chip |
| CN102136532B (en) * | 2011-02-12 | 2012-12-26 | 映瑞光电科技(上海)有限公司 | LED (Light-Emitting Diode) and manufacture method thereof |
| JP7296001B2 (en) * | 2018-10-17 | 2023-06-21 | 日機装株式会社 | Semiconductor light emitting device and method for manufacturing semiconductor light emitting device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH053079A (en) * | 1991-06-24 | 1993-01-08 | Pioneer Electron Corp | Organic el element |
| JPH1022523A (en) * | 1996-07-02 | 1998-01-23 | Omron Corp | Semiconductor light emitting device |
| JP2000244061A (en) * | 1998-12-21 | 2000-09-08 | Nichia Chem Ind Ltd | Nitride semiconductor and method for growing the same |
| JP2001053012A (en) * | 1999-06-28 | 2001-02-23 | Agilent Technol Inc | Assembly method of semiconductor device and iii-v-family semiconductor device |
| CN1339828A (en) * | 2000-08-17 | 2002-03-13 | 国联光电科技股份有限公司 | Luminous element with roughed interface and its producing method |
| JP2003197963A (en) * | 2001-12-27 | 2003-07-11 | Toyoda Gosei Co Ltd | Method of manufacturing substrate for group iii nitride- based compound semiconductor light emitting element |
-
2004
- 2004-01-06 CN CNB2004100001496A patent/CN100356592C/en not_active Expired - Lifetime
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH053079A (en) * | 1991-06-24 | 1993-01-08 | Pioneer Electron Corp | Organic el element |
| JPH1022523A (en) * | 1996-07-02 | 1998-01-23 | Omron Corp | Semiconductor light emitting device |
| JP2000244061A (en) * | 1998-12-21 | 2000-09-08 | Nichia Chem Ind Ltd | Nitride semiconductor and method for growing the same |
| JP2001053012A (en) * | 1999-06-28 | 2001-02-23 | Agilent Technol Inc | Assembly method of semiconductor device and iii-v-family semiconductor device |
| CN1339828A (en) * | 2000-08-17 | 2002-03-13 | 国联光电科技股份有限公司 | Luminous element with roughed interface and its producing method |
| JP2003197963A (en) * | 2001-12-27 | 2003-07-11 | Toyoda Gosei Co Ltd | Method of manufacturing substrate for group iii nitride- based compound semiconductor light emitting element |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1641890A (en) | 2005-07-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101740700B (en) | Light emitting device | |
| CN1905225A (en) | Nitride-based compound semiconductor light emitting device and method of fabricating the same | |
| CN100356592C (en) | Light-emitting diode and its manufacturing method | |
| KR20090101604A (en) | Group 3 nitride-based semiconductor light emitting diodes and methods to fabricate them | |
| CN101826579A (en) | Light emitting device | |
| CN103066176A (en) | Nitride semiconductor light emitting device | |
| CN101887938B (en) | LED chip and manufacturing method thereof | |
| KR20070028095A (en) | Light emitting diode having low resistance | |
| KR101007078B1 (en) | Light emitting device and fabrication method thereof | |
| CN102646771B (en) | Luminescent device | |
| CN108550669A (en) | Nitride semiconductor structure and semiconductor light-emitting elements | |
| CN109216395A (en) | Light emitting structure, lighting transistor and its manufacturing method | |
| CN108470803B (en) | A kind of epitaxial wafer and production method of light emitting diode | |
| TWI437731B (en) | Semiconductor optoelectronic device with enhanced light extraction efficiency and fabricating method thereof | |
| CN103972339A (en) | Nitride semiconductor structure and semiconductor light-emitting component | |
| US10147858B1 (en) | Flexible LED device and flexible LED panel | |
| KR100650996B1 (en) | A nitride semiconductor light emitting diode comprising a surface portion having a fine protrusion formed thereon and a method of manufacturing the same | |
| CN109326702A (en) | A kind of LED chip and preparation method thereof with annular electrode structure | |
| CN104393138B (en) | A kind of light emitting diode with electrode light extraction | |
| KR20110044094A (en) | Semiconductor light-emitting device | |
| KR20200111323A (en) | Semiconductor light emitting device and Manufacturing method of the same | |
| KR20090108675A (en) | Flip-chip structured group 3 nitride-based semiconductor light emitting diodes and methods to fabricate them | |
| CN108389947B (en) | Light emitting diode and preparation method thereof | |
| CN1447447A (en) | LED in III group nitride and its manufacturing methods | |
| KR101335045B1 (en) | Light emitting diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: JINGYUAN PHOTOELECTRIC CO., LTD. Free format text: FORMER NAME OR ADDRESS: YUANSHEN PHOTOELECTRIC SCIENCE-TECHNOLOGY CO., LTD. |
|
| CP01 | Change in the name or title of a patent holder |
Address after: Taiwan province of China Patentee after: EPISTAR Corp. Address before: Taiwan province of China Patentee before: SOUTH EPITAXY CORPORATION |
|
| CX01 | Expiry of patent term |
Granted publication date: 20071219 |
|
| CX01 | Expiry of patent term |