CN101364624B - Substrate having light compensating cavity and light-emitting element formed thereby - Google Patents
Substrate having light compensating cavity and light-emitting element formed thereby Download PDFInfo
- Publication number
- CN101364624B CN101364624B CN2007101432163A CN200710143216A CN101364624B CN 101364624 B CN101364624 B CN 101364624B CN 2007101432163 A CN2007101432163 A CN 2007101432163A CN 200710143216 A CN200710143216 A CN 200710143216A CN 101364624 B CN101364624 B CN 101364624B
- Authority
- CN
- China
- Prior art keywords
- centerbody
- substrate
- light
- ring
- emitting element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Led Devices (AREA)
Abstract
The invention discloses a base plate which is provided with an optical compensation cavity, as well as a solid-state light-emitting component formed by epitaxial wafers of the base plate. The base plate comprises a layer body, and a plurality of encircling bodies and centering bodies formed on the surface of the layer body respectively, wherein the encircling bodies are spaced to each other in a regular periodic array, and correspond to the centering bodies, so that the encircling bodies encircling any centering body and the encircled centering bodies form the optical compensation cavity together, and each optical compensation cavity can limit the light in an interval formed by the encircling bodies, thereby creating the effect of enhancing the standing waves, correspondingly enhancing the scattering effect to compensate for the optical losses, and further increasing the luminosity of the entire solid-state light-emitting component.
Description
Technical field
The element that the present invention relates to a kind of substrate and form with this substrate particularly relates to a kind of substrate of using for extension and the light-emitting component that forms with this substrate.
Background technology
Solid-state light emitting element is the artificial light sources of a new generation, wherein, the process technique maturation of light-emitting diode (LED), hold concurrently and have life-span length, power saving, volume is little, driving voltage is low, reaction rate is fast, the discrimination power advantages of higher, its trace application in daily life is seen everywhere.
Consult Fig. 1, general, light-emitting diode 1 comprises that a substrate 11, one deck extension are formed on the quantum unit 12 on this substrate 11, and two electrodes 14 that electric energy can be provided.
This piece substrate 11 generally is the material that is complementary by lattice constant and this quantum unit, and formation such as sapphire, aluminium oxide for example is rectangular tabular and have a smooth upper surface 111.
This layer quantum unit 12 is from these substrate 11 upwards extension formation of upper surfaces 111 with gallium nitride based semi-conducting material, having one deck is connected with this upper surface 111 and includes the first type coating layer 121 (being n cladding-layer) that a central area 124 and ring enclose the outer zone 125 of this central area 124, the active layer 123 (active layer) that one deck upwards forms from central area 124 end faces of this first type coating layer 121, the second type coating layer 122 (being p cladding-layer) that one deck upwards forms from these active layer 123 end faces, and one deck is formed on the current-diffusion layer 126 on this second type coating layer 122 with material (for example indium tin oxide (ITO)) transparent and that can guide electric current horizontal proliferation circulation, this is first years old, two type coating layers 121,122 relative these active layers 123 form the quantum energy barrier and can photoelectric effect produce photon, current-diffusion layer 126 can make levels of current laterally equably after the diffusion circulation more vertically by this first, two type coating layers 121,122 with active layer 123, and then lifting luminous efficiency, the central area 124 of the first type coating layer 121 of this quantum unit 12, active layer 123, the second type coating layer 122, and be formed on the main outwards luminous platform area 100 (being mesa) of current-diffusion layer 124 composed components on this second type coating layer 122.
This two electrode 14 is to constitute with for example metal such as copper, silver and/or its alloy, remotely be located at the corner, two diagonal angles of this light-emitting diode 1 toward each other, and beat up nurse with the first type coating layer 121 of this quantum unit 12 and this current-diffusion layer 126 respectively and contact, and can provide electric energy to make this quantum unit 12 produce light to this quantum unit 12.
When this two electrode 14 applies electric energy certainly, electric current is from this sheet and current-diffusion layer 126 after the electrode 14 of ohmic contact disperses circulation through these current-diffusion layer 126 transverse horizontal mutually, diffuse flow produces photon by first and second type coating layer 121,122, active layer 123 with photoelectric effect vertically downward, and then makes this light-emitting diode 1 luminous.
Because the preferable quantum unit internal quantum efficiency of lattice structure produces the efficient of photon also can be preferable, so generally go out the preferable quantum unit of quality for epitaxial growth, the capital requires the quality of substrate-just require the as much as possible smooth zero defect of upper surface of base plate, with extension, the generation of defective in the process of avoiding epitaxial growth, and then the efficient reduction that causes the structure of quantum unit not good, produces photon.
Though but the smooth substrate of these upper surfaces can go out the preferable quantum unit of crystal structure by epitaxial growth, but also because upper surface smooth, the light that the equivalent subelement produces with photoelectric effect and advances towards orientation substrate, total reflection can more easily be produced and refraction constantly and reflection in element, not only wasted the light that is produced, used heat also and then in forming and have influence on the working life of element.
Consult Fig. 2, also have in addition document propose randomly/or alligatoring substrate 11 ' makes its upper surface 111 ' become very not smooth regularly, make the light of advancing the time through this upper surface 111 ' towards substrate 11 ' direction, pierce in the substrate 11 ' without leave because of irregular interface, and then the light that reduces component internal produces total reflection, the probability of used heat in producing, but these modes, also just will be originally advance and passing that this upper surface 111 ' produces total reflection and the light of thermosetting in causing towards substrate 11 ' direction, by the painstakingly alligatoring of substrate 11 ' upper surface 111 ' and can directly go and pierce in the substrate avoiding producing total reflection, and the light that utilizes these to advance towards substrate 11 ' direction more not yet in effect.
Therefore, if can effectively improve the structure of present substrate, the light that not only helps complete proposition internal quantum efficiency to be produced, outside luminosity that also can lift elements integral body simultaneously.
Summary of the invention
The objective of the invention is is providing a kind of substrate with light compensated cavity that can compensate luminous effect.Another object of the present invention is that a kind of formed light-emitting component of the substrate by having the light compensated cavity with high luminosity and light efficiency benefit occurred frequently is being provided.
A kind of substrate with light compensated cavity of the present invention is used for extension and forms a quantum unit that can photoelectric effect produces light, and this substrate comprises one deck body, most ring containment bodies, and most centerbodies.
This layer body has a upper surface.
This majority ring containment body serve as at interval in the periodic arrangement of this upper surface formation rule with the integral multiple of predetermined wavelength 1/4th each other, and defines the polygon interval of most length of sides such as individual.
The corresponding respectively ring containment body that is positioned at the central authorities in these intervals and makes ring enclose arbitrary centerbody of this majority centerbody is that central axis that should centerbody is radial symmetric, and the ring majority ring containment body that encloses arbitrary centerbody and this centerbody that is enclosed by ring are common forms a light compensated cavity that can limit light generation standing wave and enhanced light scattering.
In addition, a kind of solid-state light emitting element of the present invention is luminous and comprise a substrate, a quantum unit with photoelectric effect, and two plate electrodes.
This piece substrate has one deck body, most the ring containment bodies that are formed on this layer body upper surface, and most centerbodies that are formed on this layer body upper surface, this majority ring containment body serves as the periodic arrangement of interval formation rule with the integral multiple of predetermined wavelength 1/4th each other, and define the polygon interval of the length of sides such as most, the corresponding respectively central authorities that are positioned at these intervals of this majority centerbody, and the ring containment body that makes ring enclose arbitrary centerbody is that central axis that should centerbody is radial symmetric, and makes that majority ring containment body that ring encloses arbitrary centerbody and this centerbody that is enclosed by ring are common to form a light compensated cavity that can limit light generation standing wave and enhanced light scattering.
This quantum unit makes progress from this substrate, and extension forms and can photoelectric effect produce light.
This two plate electrode is spaced apart and arranged on this quantum unit, is can cooperatively interact and this quantum unit is applied electric energy.
Beneficial effect of the present invention is: form the light compensated cavity jointly with centerbody and ring containment body, should and light can be limited in the interval of encircling containment body formation and produce the strong synergy of standing wave, compensate light loss with relative enhancing scattering effect, and then can increase the luminosity of whole solid-state light emitting element.
Description of drawings
Fig. 1 is a cross-sectional schematic, and the structure of an existing light-emitting diode is described;
Fig. 2 is a cross-sectional schematic, and the structure of an existing and substrate through the light-emitting diode of alligatoring is described;
Fig. 3 is a cross-sectional schematic, and a kind of one first preferred embodiment with substrate of light compensated cavity of the present invention is described;
Fig. 4 is a partial perspective view, the light compensated cavity of the substrate with light compensated cavity of key diagram 3;
Fig. 5 is a cross-sectional schematic, and a kind of one second preferred embodiment with substrate of light compensated cavity of the present invention is described;
Fig. 6 is a partial perspective view, and the another kind of aspect of the light compensated cavity of the substrate that is similar to first and second preferred embodiment is described;
Fig. 7 is a partial perspective view, and another aspect of the light compensated cavity of the substrate that is similar to first and second preferred embodiment is described;
Fig. 8 is a cross-sectional schematic, and a kind of one the 3rd preferred embodiment with substrate of light compensated cavity of the present invention is described;
Fig. 9 is a partial perspective view, the light compensated cavity of the substrate with light compensated cavity of key diagram 8;
Figure 10 is a cross-sectional schematic, and a kind of one the 4th preferred embodiment with substrate of light compensated cavity of the present invention is described;
Figure 11 is a partial perspective view, and the another kind of aspect of the light compensated cavity of the substrate that is similar to third and fourth preferred embodiment is described;
Figure 12 is a partial perspective view, and another aspect of the light compensated cavity of the substrate that is similar to third and fourth preferred embodiment is described;
Figure 13 is a cross-sectional schematic, and a kind of one the 5th preferred embodiment with substrate of light compensated cavity of the present invention is described;
Figure 14 is a partial perspective view, and the light compensated cavity of the substrate with light compensated cavity of Figure 13 is described; And
Figure 15 is a cross-sectional schematic, and a solid-state light emitting element that is formed by the substrate institute extension of Fig. 3 is described.
Embodiment
The present invention is described in detail below in conjunction with drawings and Examples:
Consult Fig. 3 and Fig. 4, a kind of one first preferred embodiment with substrate of light compensated cavity of the present invention is applicable to that extension forms a quantum unit (scheming not shown) that can photoelectric effect produces light.
This substrate 2 is for example sapphire substrate, aluminum oxide substrate, carbon zinc substrate, zinc oxide substrate, GaAs substrate etc., comprises one deck body 21, most ring containment bodies 22, and most centerbodies 23.
This layer body 21 thickness have a upper surface 211 much larger than the height of these ring containment bodies 22, centerbody 23.
Most ring containment bodies 22 be respectively from these upper surface 211 one upwards protrude out and height between 1～3 μ m, radius is between the cylinder of 0.5～2 μ m, and the integral multiple with predetermined wavelength 1/4th is the periodic arrangement of interval (being 4 μ m in this example) formation rule each other, simultaneously, define the interval 24 of an equilateral hexagon with per 12 ring containment bodies, and two adjacent intervals 24 mode of sharing the ring containment body of adjacent edges defines most each and every one intervals 24.
This majority centerbody 23 be respectively from these upper surface 211 one upwards protrude out and the height between 1～3 μ m, the length of side is between the hexagon prism of 2～6 μ m, and each centerbody 23 is that to be positioned at the central authorities in this interval 24 and to make ring enclose 12 of arbitrary centerbody 23 ring containment bodies 22 be that central axis that should centerbody 23 is radial symmetric, and ring encloses the majority ring containment body 22 and this light compensated cavity 25 of centerbody 23 common formation that is enclosed by ring of arbitrary centerbody 23, when light is advanced in this light compensated cavity 25, because centerbody 23, ring containment body 22 is different with the medium of context (is air at this), the majority ring containment body 22 that therefore can be centered on every side limit and produce the strong synergy of standing wave should, relatively scattering effect also can strengthen, and the light loss can compensate light and pass centerbody 23 time.
Consult Fig. 5, a kind of one second preferred embodiment of the present invention with substrate 2 ' of light compensated cavity, be similar to this first preferred embodiment, be applicable to that extension forms a quantum unit (scheming not shown) that can photoelectric effect produces light, it does not exist together and only is that these ring containment bodies 22 ' are respectively to form the degree of depth downwards between 1～3 μ m from this upper surface 211 ' with centerbody 23 ', radius is between the cylindrical shrinkage pool of 0.5～2 μ m, and the degree of depth is between 1～3 μ m, and the cross section is the hexagon prism hole of the length of side between 2～6 μ m, and can similarly reach the effect of compensation light loss.
In addition, it is described to be similar to this first and second embodiment, this centerbody 22,22 ' is not that must to become the cross section be hexagonal aspect, cylinder 26 for example shown in Figure 6, or cylindrical shrinkage pool 27 as shown in Figure 7, can reach the effect of compensation light loss,, not illustrate in detail one by one at this because these form kinds are numerous.
Consult Fig. 8 and Fig. 9, a kind of one the 3rd preferred embodiment with substrate 3 of light compensated cavity of the present invention is applicable to that extension forms a quantum unit (scheming not shown) that can photoelectric effect produces light.
This substrate 3 is for example sapphire substrate, aluminum oxide substrate, carbon zinc substrate, zinc oxide substrate, GaAs substrate etc., comprises one deck body 31, most ring containment bodies 32, and most centerbodies 33.
This layer body 31 thickness have a upper surface 311 much larger than the height of these ring containment bodies 32, centerbody 33.
Most ring containment bodies 32 be respectively from these upper surface 311 one upwards protrude out and height between 1～3 μ m, radius is between the cylinder of 0.5～2 μ m, and the integral multiple with predetermined wavelength 1/4th is the periodic arrangement of interval (being 4 μ m in this example) formation rule each other, simultaneously, arrange with the mode periods rules that per 12 ring containment bodies 32 define an equilateral hexagon interval 34, and define most the intervals 34 that also become periods rules to arrange each other.
This majority centerbody 33 be respectively from these upper surface 311 one upwards protrude out and the height between 1～3 μ m, the length of side is between the hexagon prism of 2～6 μ m, and each centerbody 33 is that to be positioned at the central authorities in this interval 34 and to make ring enclose 12 of arbitrary centerbody 33 ring containment bodies 32 be that central axis that should centerbody 33 is radial symmetric, and ring encloses the majority ring containment body 32 and this light compensated cavity 35 of centerbody 33 common formation that is enclosed by ring of arbitrary centerbody 33, when light is advanced in this light compensated cavity 35, because centerbody 33, ring containment body 32 is different with the medium of context (is air at this), the majority ring containment body that therefore can be centered on every side limit and produce the strong synergy of standing wave should, relatively scattering effect also can strengthen, and the light loss can compensate light and pass centerbody 33 time.
Consult Figure 10, a kind of one the 4th preferred embodiment of the present invention with substrate 3 ' of light compensated cavity, be similar to the 3rd preferred embodiment, be applicable to that extension forms a quantum unit (scheming not shown) that can photoelectric effect produces light, it does not exist together and only is that these ring containment bodies 32 ' are respectively to form the degree of depth downwards between 1～3 μ m from this upper surface 311 ' with centerbody 33 ', radius is between the cylindrical shrinkage pool of 1～6 μ m, and the degree of depth is between 1～3 μ m, and the cross section is the hexagon prism hole of the length of side between 2～6 μ m, and can similarly reach the effect of compensation light loss.
In addition, it is described to be similar to this third and fourth embodiment, this centerbody 33,33 ' is not that must to become the cross section be hexagonal aspect, cylinder 36 for example shown in Figure 11, or cylindrical shrinkage pool 37 as shown in figure 12 etc. can reach the effect of compensation light loss, because these form kinds are numerous, do not illustrate in detail one by one at this.
Moreover, though in above-mentioned first to fourth preferred embodiment, ring containment body 22,22 ', 32,32 ' cross section aspect all are to be the example explanation with the circle, yet, for example equilateral triangle, quadrangle, or even polygon etc., all can be suitable for and reach the strong synergy of similar generation standing wave should, with the effect of relative enhancing scattering effect,, illustrate no longer one by one at this because the variation of these shape aspects is numerous.
Consult Figure 13 and Figure 14, a kind of one the 5th preferred embodiment with substrate of light compensated cavity of the present invention is applicable to that extension forms a quantum unit (scheming not shown) that can photoelectric effect produces light.
This substrate 7 is for example sapphire substrate, aluminum oxide substrate, carbon zinc substrate, zinc oxide substrate, GaAs substrate etc., comprises one deck body 71, most ring containment bodies 72, and most centerbodies 73.
This layer body 71 thickness have a upper surface 711 much larger than the height of these ring containment bodies 72, centerbody 73.
This majority ring containment body 72 is respectively upwards to protrude out from these upper surface 711 one, and the integral multiple with predetermined wavelength 1/4th is the periodic arrangement of interval (being 4 μ m in this example) formation rule each other, simultaneously, define the interval 74 of an equilateral hexagon with per 12 ring containment bodies, and two adjacent intervals 74 mode of sharing the ring containment body of adjacent edges defines most each and every one intervals 74.
This each ring containment body 72 be height between 0.3～4 μ m, the path length in the zone that joins with this upper surface 711 is between 0.5～2 μ m, the ratio of height path length is between 0.15～8 semielliptical.
This majority centerbody 73 is respectively upwards to protrude out from these upper surface 711 one, and each centerbody 73 is that to be positioned at the central authorities in this interval 74 and to make ring enclose 12 of arbitrary centerbody 73 ring containment bodies 72 be that central axis that should centerbody 73 is radial symmetric.
This each centerbody 73 be height between 0.3～4 μ m, the path length in the zone that joins with this upper surface 711 is between 1～4 μ m, the ratio of height path length is between 0.3～4 semielliptical.
Moreover, ring encloses the majority ring containment body 72 and this light compensated cavity 75 of centerbody 73 common formation that is enclosed by ring of arbitrary centerbody 73, when light is advanced in this light compensated cavity 75, because centerbody 73, the ring containment body 72 different with the medium of context (is air at this), the majority ring containment body 72 that therefore can be centered on every side limit and produce the strong synergy of standing wave should, relatively scattering effect also can strengthen, and the light loss can compensate light and pass centerbody 73 time.
Consult Figure 15, by a kind of solid-state light emitting element 4 of the present invention with substrate extension shape of light compensated cavity, be to comprise that this piece first preferred embodiment illustrated substrate 2, one deck are formed on the quantum unit 5 on this substrate 2, and two plate electrodes 6, with the light-emitting diode example explanation at this.
Cooperate and consult Fig. 3 and Fig. 4, this piece substrate 2 promptly is the illustrated substrate 2 of above-mentioned first preferred embodiment, because the clearly explanation in above-mentioned narration of its structure no longer adds to repeat tired stating at this.
This layer quantum unit 5 is from this upwards extension formation of substrate 2, having one deck is connected with this substrate 2 and includes the first type coating layer 51 (being ncladding-layer) that a central area 511 and ring enclose the outer zone 512 of this central area 511, the active layer 52 that one deck upwards forms from central area 511 end faces of this first type coating layer 51, the second type coating layer 53 (being p cladding-layer) that one deck upwards forms from these active layer 52 end faces, and one deck is formed on the current-diffusion layer 54 on this second type coating layer 53 with material (for example indium tin oxide (ITO)) transparent and that can guide electric current horizontal proliferation circulation, this is first years old, two type coating layers 51,53 relative these active layers 52 form the quantum energy barrier and can photoelectric effect produce photon, current-diffusion layer 54 can make levels of current laterally equably after the diffusion circulation more vertically by this first, two type coating layers 51,53 with active layer 52, and then lifting luminous efficiency, the central area 511 of the first type coating layer 51 of this quantum unit 5, the active layer 52 and the second type coating layer 53, and be formed on the main outwards luminous platform area 55 (being mesa) of current-diffusion layer 54 composed components on this second type coating layer 53.
This two electrode 6 is to constitute with for example metal such as copper, silver and/or its alloy, remotely be located at the corner, two diagonal angles of this solid-state light emitting element 4 toward each other, and beat up nurse with the first type coating layer 51 of this quantum unit 5 and this current-diffusion layer 54 respectively and contact, and can provide electric energy to make this quantum unit 5 produce light to this quantum unit 5.
When this two electrode 6 applies electric energy certainly, electric current is from this sheet and current-diffusion layer 54 after the electrode 6 of ohmic contact disperses circulation through these current-diffusion layer 54 transverse horizontal mutually, diffuse flow produces photon by first and second type coating layer 51,53, active layer 52 with photoelectric effect vertically downward, and then makes this solid-state light emitting element 4 luminous.
The interface that is connected with quantum unit 5 owing to this substrate 2 is to be formed with centerbody 23 by the upper surface 211 of layer body 21 and the ring containment body 22 that protrudes out, therefore can produce the effect that is similar to the alligatoring substrate, the light that just makes quantum unit 5 produce and advance towards substrate 2 directions with photoelectric effect, pierce into without leave in the substrate 2 because of irregular interface, and then the light that reduces element internal produces total reflection, the probability of used heat in producing, but pass in the process of substrate 2 and the linkage interface of quantum unit 5 at these light, because the centerbody 23 of substrate 2, ring containment body 22 is different with the refraction coefficient of quantum unit 5, therefore, these light can be limited by the majority ring containment body 22 around the light compensated cavity 25 and produce the strong synergy of standing wave should, relatively scattering effect also can strengthen, and the light loss can compensate light and pass centerbody 23 time, and then guide negative line feed again with light, and will be originally advance and passing that linkage interface can produce total reflection and the light of thermosetting in causing towards substrate 2 directions, limitation and guiding by the light compensated cavity 25 of substrate 2, make progress forward from the ejaculation of platform area 55 end faces and be in reverse to, and then increase the luminosity of element towards substrate 2 directions.
What this will be illustrated especially be, the various substrate of in above-mentioned narration, mentioning 2,2 ', 3,3 ', 7, all can extension form quantum unit 5, make solid-state light emitting element after electrode 6 is set,, state so no longer repeat to tire out because effect of its compensation light is all similar.
In addition, because the substrate 2 with light compensated cavity of the present invention, 2 ', 3,3 ', 7 centerbody 23,23 ', 33,33 ', 73 with the ring containment body 22,22 ', 32,32 ', the 72nd, use the gold-tinted photoetching technique and painstakingly make, therefore, form in the process of quantum unit 5 in follow-up extension, though inevasible meeting is because these substrates 2,2 ', 3,3 ', 7 structure and produce lattice defect, but also because the current substrate that belongs to artificial particular design for these structures, existing at present many pieces of documents and enough process technique propose to overcome at these problems, the answer that the quantum unit internal quantum efficiency that these that solve can cause follow-up extension to make reduces, and extension formation crystal structure meets required quantum unit, therefore, can't cause another need overcome the problem of solution.Because this partly is not creation emphasis of the present invention place, so no longer deeply be illustrated.
As shown in the above description, the present invention proposes a kind of substrate 2,2 ', 3,3 ', 7 with light compensated cavity, by centerbody 23,23 ', 33,33 ', 73 and ring enclose light compensated cavity 25,35, the 75 restriction light that the ring containment body 22,22 ', 32,32 ', 72 of this centerbody 23,23 ', 33,33 ', 73 constitutes should to produce the strong synergy of standing wave, relatively scattering effect also can strengthen, and the light loss can compensate light and pass the time; Further, the present invention proposes to have the substrate 2 of light compensated cavity with these, 2 ', 3,3 ', 7 formed solid-state light emitting elements 4, by substrate 2,2 ', 3,3 ', 7 light compensated cavity 25,35,75, and quantum unit 5 produced with photoelectric effect and towards substrate 2,2 ', 3,3 ', the light that 7 directions are advanced, pierce into without leave into substrate 2 because of irregular interface, 2 ', 3,3 ', in 7, and then the light that reduces element internal produces total reflection, the probability of used heat in producing, simultaneously, pass in the process at interface at these light, allow light by light compensated cavity 25,35,75 limit and then produce the strong synergy of standing wave should, and relatively strengthen scattering effect, forward penetrates from platform area 55 end faces and can compensate light loss and guide light upwards again, and then the luminosity of increase element, reach creation purpose of the present invention really.
Claims (21)
1. substrate with light compensated cavity is used for extension and forms a quantum unit that can photoelectric effect produces light; It is characterized in that:
This substrate comprises that one has the layer body of a upper surface, most the ring containment bodies that are formed on this upper surface, and most centerbodies that are formed on this upper surface, this majority ring containment body is the periodic arrangement of interval rule with the integral multiple of predetermined wavelength 1/4th each other, and define the polygon interval of the length of sides such as most, this majority centerbody, the central authorities in the corresponding respectively polygon interval that is positioned at the length of sides such as this majority and make ring containment body that ring encloses arbitrary centerbody be radial symmetric to central axis that should centerbody, and the ring majority ring containment body that encloses arbitrary centerbody and this centerbody that is enclosed by ring are common forms a light compensated cavity that can limit light generation standing wave and enhanced light scattering.
2. the substrate with light compensated cavity as claimed in claim 1 is characterized in that: this ring containment body be from this upper surface one upwards protrude out and the height between 1～3 μ m, radius is between the cylinder of 0.5～2 μ m.
3. the substrate with light compensated cavity as claimed in claim 2 is characterized in that: this centerbody be from this upper surface one upwards protrude out and the height between 1～3 μ m, the length of side is between the hexagon prism of 2～6 μ m.
4. the substrate with light compensated cavity as claimed in claim 2 is characterized in that: this centerbody is the cylinder that upwards protrudes out from this upper surface one.
5. the substrate with light compensated cavity as claimed in claim 1 is characterized in that: this ring containment body is to form the degree of depth downwards between 1～3 μ m from this upper surface, and radius is between the cylindrical shrinkage pool of 0.5～2 μ m.
6. the substrate with light compensated cavity as claimed in claim 5 is characterized in that: this centerbody is to form the degree of depth downwards between 1～3 μ m from this upper surface, and the cross section is the hexagon prism hole of the length of side between 2～6 μ m.
7. the substrate with light compensated cavity as claimed in claim 5 is characterized in that: this centerbody is the cylindrical shrinkage pool that forms downwards from this upper surface.
8. the substrate with light compensated cavity as claimed in claim 1, it is characterized in that: this each ring containment body be from this upper surface one upwards protrude out and height between 0.3～4 μ m, the path length in the zone that joins with this upper surface is between 0.5～2 μ m, and the ratio of height path length is between 0.15～8 semielliptical shape.
9. the substrate with light compensated cavity as claimed in claim 8, it is characterized in that: this each centerbody be from this upper surface one upwards protrude out and the height between 0.3～4 μ m, the path length in the zone that joins with this upper surface is between 1～4 μ m, and the ratio of height path length is between 0.3～4 semielliptical shape.
10. solid-state light emitting element, luminous with photoelectric effect, comprise that a substrate, one make progress that extension forms and can photoelectric effect produce the quantum unit of light from this substrate, and two are spaced apart and arranged in the electrode that to cooperatively interact this quantum unit is applied electric energy on this quantum unit; It is characterized in that:
This piece substrate has one deck body, most the ring containment bodies that are formed on this layer body upper surface, and most centerbodies that are formed on this layer body upper surface, this majority ring containment body serves as the periodic arrangement of interval formation rule with the integral multiple of predetermined wavelength 1/4th each other, and define the polygon interval of the length of sides such as most, this majority centerbody is corresponding respectively to be positioned at the central authorities in the polygon interval of the length of sides such as this majority, and the ring containment body that makes ring enclose arbitrary centerbody is that central axis that should centerbody is radial symmetric, and makes that majority ring containment body that ring encloses arbitrary centerbody and this centerbody that is enclosed by ring are common to form a light compensated cavity that can limit light generation standing wave and enhanced light scattering.
11. solid-state light emitting element as claimed in claim 10, it is characterized in that: this quantum unit also has one deck first type coating layer, one deck second type coating layer, and the active layer of one deck between this first and second type coating layer, this first and second type coating layer this active layer relatively forms the quantum energy barrier and can photoelectric effect produce photon.
12. solid-state light emitting element as claimed in claim 11 is characterized in that: this quantum unit also has one deck and is formed on current-diffusion layer on this second type coating layer with material transparent and that can guide electric current horizontal proliferation circulation.
13. solid-state light emitting element as claimed in claim 12 is characterized in that: this two electrode is separately positioned on the current-diffusion layer of this quantum unit and this first type coating layer so that electric energy to be provided.
14. solid-state light emitting element as claimed in claim 13 is characterized in that: this ring containment body be from this upper surface one upwards protrude out and the height between 1～3 μ m, radius is between the cylinder of 0.5～2 μ m.
15. solid-state light emitting element as claimed in claim 14 is characterized in that: this centerbody be from this upper surface one upwards protrude out and the height between 1～3 μ m, the length of side is between the hexagon prism of 2～6 μ m.
16. solid-state light emitting element as claimed in claim 14 is characterized in that: this centerbody is the cylinder that upwards protrudes out from this upper surface one.
17. solid-state light emitting element as claimed in claim 13 is characterized in that: this ring containment body is to form the degree of depth downwards between 1～3 μ m from this upper surface, and radius is between the cylindrical shrinkage pool of 0.5～2 μ m.
18. solid-state light emitting element as claimed in claim 17 is characterized in that: this centerbody is to form the degree of depth downwards between 1～3 μ m from this upper surface, and the cross section is the hexagon prism hole of the length of side between 2～6 μ m.
19. solid-state light emitting element as claimed in claim 17 is characterized in that: this centerbody is the cylindrical shrinkage pool that forms downwards from this upper surface.
20. solid-state light emitting element as claimed in claim 13, it is characterized in that: this each ring containment body be from this upper surface one upwards protrude out and height between 0.3～4 μ m, the path length in the zone that joins with this upper surface is between 0.5～2 μ m, and the ratio of height path length is between 0.15～8 semielliptical.
21. solid-state light emitting element as claimed in claim 10, it is characterized in that: this each centerbody be from this upper surface one upwards protrude out and the height between 0.3～4 μ m, the path length in the zone that joins with this upper surface is between 1～4 μ m, and the ratio of height path length is between 0.3～4 semielliptical.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101432163A CN101364624B (en) | 2007-08-07 | 2007-08-07 | Substrate having light compensating cavity and light-emitting element formed thereby |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101432163A CN101364624B (en) | 2007-08-07 | 2007-08-07 | Substrate having light compensating cavity and light-emitting element formed thereby |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101364624A CN101364624A (en) | 2009-02-11 |
| CN101364624B true CN101364624B (en) | 2011-09-07 |
Family
ID=40390880
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007101432163A Expired - Fee Related CN101364624B (en) | 2007-08-07 | 2007-08-07 | Substrate having light compensating cavity and light-emitting element formed thereby |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101364624B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1641890A (en) * | 2004-01-06 | 2005-07-20 | 元砷光电科技股份有限公司 | Light-emitting diode and its manufacturing method |
| CN1652367A (en) * | 2001-06-25 | 2005-08-10 | 株式会社东芝 | Face lighting type semiconductor light emitting device |
| CN1787241A (en) * | 2004-12-09 | 2006-06-14 | 璨圆光电股份有限公司 | High brightness gallium nitrate kind LED structure |
-
2007
- 2007-08-07 CN CN2007101432163A patent/CN101364624B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1652367A (en) * | 2001-06-25 | 2005-08-10 | 株式会社东芝 | Face lighting type semiconductor light emitting device |
| CN1641890A (en) * | 2004-01-06 | 2005-07-20 | 元砷光电科技股份有限公司 | Light-emitting diode and its manufacturing method |
| CN1787241A (en) * | 2004-12-09 | 2006-06-14 | 璨圆光电股份有限公司 | High brightness gallium nitrate kind LED structure |
Non-Patent Citations (2)
| Title |
|---|
| JP特开2000-244061A 2000.09.08 |
| JP特开2003-197963A 2003.07.11 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101364624A (en) | 2009-02-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100705226B1 (en) | Device having three dimentional structure light emitting layer and method for fabricating the same | |
| KR101715843B1 (en) | Light emitting device having improved light extraction efficiency | |
| US20150188015A1 (en) | GaN-based Light Emitting Diode with Current Spreading Structure | |
| Zhang et al. | Enhancing extraction efficiency of quantum dot light-emitting diodes by surface engineering | |
| CN102945902B (en) | Light-emitting diode of photonic crystal structure and application thereof | |
| TWI623115B (en) | Thin-film flip-chip light emitting diode having roughening surface and method for manufacturing the same | |
| CN101667612B (en) | Photoelectric element | |
| CN100341159C (en) | High-efficiency light emitting diode | |
| JP2011054828A (en) | Photonic-crystal light-emitting diode | |
| CN101364624B (en) | Substrate having light compensating cavity and light-emitting element formed thereby | |
| CN201812849U (en) | Electrode structure of light-emitting diode (LED) chip and LED chip structure containing same | |
| CN113451465A (en) | Light emitting diode, manufacturing method thereof and display screen | |
| US20120112160A1 (en) | Solid state light emitting device and method for making the same | |
| CN201773861U (en) | Gallium-nitride-based high-brightness light emitting diode provided with serrated pores on lateral face | |
| KR20130048477A (en) | A light emitting device and a manufacturing method thereof | |
| CN102142499A (en) | LED (light emitting diode) wafer with evenly distributed current | |
| Lee et al. | Nitride-based thin-film light-emitting diodes with photonic quasi-crystal surface | |
| CN101364623A (en) | Vertically conducting LED and manufacturing method thereof | |
| CN2752963Y (en) | Vertical electrode structure of white light light-emitting diode | |
| CN110783436B (en) | Large-size light-emitting diode with invisible extension electrode and manufacturing method | |
| JP2020113657A (en) | Semiconductor light-emitting element | |
| CN114203873B (en) | Micro light-emitting diode chip and preparation method thereof | |
| CN212434646U (en) | LED chip | |
| US20080129198A1 (en) | Light-emitting diode device | |
| CN201732808U (en) | High-brightness gallium nitride based light emitting diode with epitaxial layer having continuous holes |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110907 Termination date: 20190807 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |