CN1787241A - High brightness gallium nitrate kind LED structure - Google Patents
High brightness gallium nitrate kind LED structure Download PDFInfo
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- CN1787241A CN1787241A CNA200410098518XA CN200410098518A CN1787241A CN 1787241 A CN1787241 A CN 1787241A CN A200410098518X A CNA200410098518X A CN A200410098518XA CN 200410098518 A CN200410098518 A CN 200410098518A CN 1787241 A CN1787241 A CN 1787241A
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Abstract
The invention advances a structure of high brightness GaN LED, which uses silicon nitride, magnesium nitride or silicon- and magnesium- highly doped aluminum gallium indium nitride to form a mask buffer layer comprising plural random distributed crowded masks, then growing a p-type rough contact layer composed of p-type aluminum gallium indium nitride which is not directly grown on the mask buffer layer but grown from the top surface of the part of the p-type contact layer unmasked by the mask buffer layer, and not stop growing the p-type rough contact layer until it extends to exceed the masks of the buffer layer by a certain height. The structure can roughen the surface of the GaN LED, avoiding the inner all reflection and then raise the outer quantum efficiency and light emitting efficiency.
Description
Technical field
The present invention relates to a kind of gallium nitrate kind LED, particularly the high brightness gallium nitrate kind LED structure that is roughened about a kind of surface.
Background technology
Gallium nitride (GaN) kind LED, owing to can produce the light-emittingdiode of each coloured light by the composition of control material, therefore its correlation technique becomes the focus of the positive research and development of industry and academia in recent years.Academia and industry are the characteristics of luminescences of understanding gallium nitrate kind LED to one of research emphasis of gallium nitrate kind LED, and then propose to improve the method for its luminous efficiency and brightness.The gallium nitrate kind LED of this high efficiency and high brightness can effectively be applied to fields such as outdoor display board, the illumination of vehicle usefulness future.
The luminous efficiency of gallium nitrate kind LED, main relevant with the internal quantum (Internal Quantum Efficiency) and the external quantum efficiency (External QuantumEfficiency) of gallium nitrate kind LED.The former with the gallium nitrate kind LED active layers in electronics electricity hole in conjunction with so that to discharge the probability of photon relevant.Electronics electricity hole is easy more compound, and photon is easy to generate more, and internal quantum is just high more, and the luminous efficiency of gallium nitrate kind LED is also just high more usually.The latter then is not subjected to the absorption of gallium nitrate kind LED itself relevant with the probability that influences, successfully breaks away from gallium nitrate kind LED with photon.Multi-photon can be discharged into outside the gallium nitrate kind LED more, and external quantum efficiency is just high more, and the luminous efficiency of gallium nitrate kind LED is also just high more usually.
The external quantum efficiency of gallium nitrate kind LED depends primarily on form and its refractive index on its Top end top layer.The refractive index of known gallium nitrate kind LED and air is respectively 2.5 and 1.Because the refractive index of known gallium nitrate kind LED is higher, be easy to form inner full-reflection.The photon that is generated is because the cause of inner full-reflection is difficult to be discharged into outside the gallium nitrate kind LED.The external quantum efficiency of gallium nitrate kind LED thereby be severely limited usually.
Summary of the invention
The present invention proposes a kind of structure of gallium nitrate kind LED, restriction and disappearance in can Shi Ji Xie Decision aforementioned related art.
Gallium nitrate kind LED proposed by the invention, its structure are on the p type contact layer in known gallium nitrate kind LED structure in the topmost difference of known gallium nitrate kind LED, utilize silicon nitride (Si
xN
y, x, y 〉=1), nitrogenize class (Mg
wN
z, w, z 〉=1) or silicon and the highly doped aluminum indium gallium nitride (Al of magnesium are arranged
sIn
tGa
1-s-tN, 0≤s, t＜1, s+t≤1), (MetalOrganic Chemical Vapor Deposition MOCVD) forms a mask buffer layer with the organic metal vapor deposition.This mask buffer layer is the Si that includes a plurality of random distribution
xN
y, Mg
wN
z, or Al
sIn
tGa
1-s-tThe shade of N clustering (Cluster).And then from this mask buffer layer, growth is by p type aluminum indium gallium nitride (Al
uIn
vGa
1-u-vN, 0≤u, v＜l, u+v≤1) the coarse contact layer of p type that constituted.The coarse contact layer of this p type neither be grown directly upon on the mask buffer layer, but by the Si of mask buffer layer
xN
y, Mg
wN
z, or Al
sIn
tGa
1-s-tThe upper surface of the unsheltered below of N shade p type contact layer begins growth, extends upward after surpassing the shade certain altitude of mask buffer layer just to stop growing.
The present invention makes the surface of gallium nitrate kind LED be roughened owing to adopt the growth in advance of mask buffer layer.So can avoid gallium nitrate kind LED is that high refractive index causes inner full-reflection than air, and then improves the external quantum efficiency and the luminous efficiency of gallium nitrate kind LED.
The claim that now cooperates detailed description and the application of following diagram, embodiment is addressed other purpose of the present invention and advantage in the detailed description.
Description of drawings
Accompanying drawing is shown provides specific embodiment as each element described in this specification of Ju Ti Cheng Now, and explains that main purpose of the present invention is to promote understanding of the present invention.
Fig. 1 is the schematic diagram according to high brightness gallium nitrate kind LED structure embodiment 1 of the present invention;
Fig. 2 is the schematic diagram according to high brightness gallium nitrate kind LED structure embodiment 2 of the present invention;
Fig. 3 is the schematic diagram according to high brightness gallium nitrate kind LED structure embodiment 3 of the present invention.
Among the figure
10 substrates
20 resilient coatings
30n type contact layer
40 active layers
42 negative electrodes
50p type coating
60p type contact layer
70 mask buffer layers
72 mask buffer layers
74 mask buffer layers
80 coarse contact layers
90 transparency conducting layers
92 positive electrodes
Embodiment
Fig. 1 is the schematic diagram according to high brightness gallium nitrate kind LED structure embodiment 1 of the present invention.As shown in Figure 1, this embodiment is to be substrate 10 with the alumina single crystal (Sapphire) of C-Plane or R-Plane or A-Plane or carborundum (6H-SiC or 4H-SiC), and other materials that can be used for substrate 10 also comprise Si, ZnO, GaAs or spinelle (MgAl
2O
4), or lattice constant approaches the monocrystalline oxide of nitride-based semiconductor.Form one by the aluminum indium gallium nitride (Al that specific composition is arranged in a side of this substrate 10 then
aGa
bIn
1-a-bN, 0≤a, b＜1, a+b≤1) resilient coating 20 that is constituted and the n type contact layer 30 on this resilient coating, this n type contact layer 30 is to be made of gallium nitride (GaN) class material.Then, form active layers 40 on this n type contact layer 30, this active layers 40 is made of indium gallium nitride.Part in that n type contact layer 30 upper surfaces are not covered by active layers 40 is formed with negative electrode 42 in addition.
This embodiment then forms p type coating 50 on active layers 40.This p type coating 50 is made of the gallium nitrate kind material.On this p type coating 50, then be that material is the p type contact layer 60 of p type gallium nitride.This embodiment then on p type contact layer 60, utilizes the silicon nitride (Si with specific composition
cN
d, c, d 〉=1), (Metal Organic Chemical VaporDeposition MOCVD), the growth temperature between 600 ℃～1100 ℃, forms the mask buffer layer 70 of thickness between 5 ～100 with the organic metal vapor deposition.This mask buffer layer 70 is the Si that includes a plurality of random distribution in fact
cN
dThe shade of clustering (Cluster).
This embodiment and then with 800 ℃～1100 ℃ growth temperature, growth thickness is between 500 ～10000 , by p type aluminum indium gallium nitride (Al
eIn
fGa
1-e-fN, 0≤e, f＜1, e+f≤1) the coarse contact layer 80 of p type that constituted.The coarse contact layer 80 of this p type neither Zhi Jie Cheng Long on mask buffer layer 70, but by the Si of mask layer 70
cN
aThe upper surface of the unsheltered below of shade p type contact layer 60 begins growth, extends upward behind the shade certain altitude that surpasses (but not covering) mask buffer layer 70 just to stop growing.
Above the coarse contact layer 80 of p type, this embodiment further forms the positive electrode 92 and transparency conducting layer 90 of non-overlapping copies respectively.This positive electrode 92 can be by Ni/Au alloy, Ni/Pt alloy, Ni/Pd alloy, Ni/Co alloy, Pd/Au alloy, Pt/Au alloy, Ti/Au alloy, Cr/Au alloy, Sn/Au alloy, Ta/Au alloy, TiN, TiWN
x(x 〉=0), WSi
y(y 〉=0) waits one of them or other metalloid material to constitute.This transparency conducting layer 90 can be metal conducting layer or transparent oxide layer.This metal conducting layer is by the Ni/Au alloy, the Ni/Pt alloy, and the Ni/Pd alloy, the Pd/Au alloy, the Pt/Au alloy, the Cr/Au alloy, the Ni/Au/Be alloy, the Ni/Cr/Au alloy, the Ni/Pt/Au alloy, one of Ni/Pd/Au alloy and other similar material constitute.This transparent oxide layer is by ITO, CTO, ZnO:Al, ZnGa
2O
4, SnO
2: Sb, Ga
2O
3: Sn, AgInO
2: Sn, In
2O
3: Zn, CuAlO
2, LaCuOS, NiO, CuGaO
2, SrCu
2O
2One of them constitutes.
Fig. 2 is the schematic diagram according to high brightness gallium nitrate kind LED structure embodiment 2 of the present invention.As shown in Figure 2, this embodiment has identical structure and growth pattern with embodiment 1.Unique difference is the used material of mask buffer layer.This embodiment is on p type contact layer 60, utilizes the magnesium nitride (Mg with specific composition
gN
h, g, h 〉=1), equally, form the mask buffer layer 72 of thickness between 5 ～100 with the growth temperature between the organic metal vapor deposition, 600 ℃～1100 ℃.This mask buffer layer 72 also is the Mg that includes a plurality of random distribution
gN
hThe shade of clustering.
This embodiment and then with 800 ℃～1100 ℃ growth temperature, growth thickness is between 500 ～10000 , by p type aluminum indium gallium nitride (Al
iIn
jGa
1-i-jN, 0≤i, j＜1, i+j≤1) the coarse contact layer 80 of p type that constituted.The coarse contact layer 80 of this p type neither be grown directly upon on the mask buffer layer 72, but by the Mg of mask buffer layer 72
gN
hThe upper surface of the unsheltered below of shade p type contact layer 60 begins growth, extends upward behind the shade certain altitude that surpasses (but not covering) mask buffer layer 72 just to stop growing.Each layer of other of this embodiment is all identical with material, the growth pattern of each layer of the identical numbering of embodiment, therefore repeats no more.
Fig. 3 is the schematic diagram according to high brightness gallium nitrate kind LED structure embodiment 3 of the present invention.As shown in Figure 3, this embodiment has identical structure and growth pattern with above-mentioned two embodiment.Unique difference is the used material of mask buffer layer.This embodiment is on p type contact layer 60, utilizes to have high-dopant concentration (＞1 * 10
20Cm
-3) Si mix or the aluminum indium gallium nitride (Al of Mg doping or Si and the common specific composition that mixes of Mg
kIn
lGa
1-k-lN, 0≤k, l＜1, k+l≤1), with the growth temperature between the organic metal vapor deposition, 600 ℃～1100 ℃, form the mask buffer layer 74 of thickness between 5 ～100 equally.This mask buffer layer 74 also is the Al that includes a plurality of random distribution
kIn
lGa
1-k-lThe shade of N clustering.
This embodiment and then with 800 ℃～1100 ℃ growth temperature, growth thickness is between 500 ～10000 , by p type aluminum indium gallium nitride (Al
mIn
nGa
1-m-nN, 0≤m, n＜l, m+n≤1) the coarse contact layer 80 of p type that constituted.The coarse contact layer 80 of this p type neither be grown directly upon on the mask buffer layer 74, but begin growth by the upper surface of the unsheltered below of the aluminum indium gallium nitride shade p type contact layer 60 of mask buffer layer 74, extend upward behind the shade certain altitude that surpasses (but covering) mask buffer layer 74 just Ting Zhi Sheng Long.Each layer of other of this embodiment is all identical with material, the growth pattern of each layer of aforementioned two identical numberings of embodiment, therefore repeats no more.
In three above-mentioned embodiment, the two makes the surface roughening of gallium nitrate kind LED jointly mask buffer layer and coarse contact layer.Can avoid the gallium nitrate kind LED refractive index higher to cause inner full-reflection like this, and then promote the external quantum efficiency and the luminous efficiency of gallium nitrate kind LED than air.
Above-described only is in order to explain preferred embodiment of the present invention; the present invention is not played any pro forma restriction; therefore, all have any Ornaments of repairing relevant of the present invention or a change of being done under identical invention spirit, all be included in the scope that the invention is intended to protect.
Claims (8)
1. high brightness gallium nitrate kind LED structure comprises:
Substrate, it is by alumina single crystal (Sapphire), 6H-SiC, 4H-SiC, Si, ZnO, GaAs, spinelle (MgAl
2O
4) and one of the lattice constant monocrystalline oxide that approaches nitride-based semiconductor make;
Resilient coating, this resilient coating are positioned on the side of aforesaid substrate, by the aluminum indium gallium nitride (Al that specific composition is arranged
aGa
bIn
1-a-bN, 0≤a, b＜1, a+b≤1) constitute;
N type contact layer is positioned on the above-mentioned resilient coating, is made of the gallium nitrate kind material;
Active layers is positioned on the said n type contact layer, is made of indium gallium nitride;
Negative electrode is positioned on the upper surface that said n type contact layer do not cover by this active layers;
P type coating is positioned on the above-mentioned active layers, is made of p type gallium nitrate kind material;
P type contact layer is positioned on the above-mentioned p type coating, is made of p type gallium nitride;
Mask buffer layer is positioned on the above-mentioned p type contact layer, and thickness is the shade that includes the binary nitride clustering of a plurality of random distribution between 5 ～100 ;
The coarse contact layer of p type is by p type aluminum indium gallium nitride Al
eIn
fGa
1-e-fN, 0≤e, f≤1, e+f≤1) constitute, be positioned at above-mentioned mask buffer layer shade on the upper surface of unsheltered above-mentioned p type contact layer, extend upward the thickness between 500 ～10000 , surpass but do not cover the shade of above-mentioned mask buffer layer;
Transparency conducting layer is metal conducting layer or the transparent oxide layer that is positioned on the coarse contact layer of above-mentioned p type and covers its part surface, and this metal conducting layer is by the Ni/Au alloy, the Ni/Pt alloy, the Ni/Pd alloy, Pd/Au alloy, Pt/Au alloy, the Cr/Au alloy, the Ni/Au/Be alloy, Ni/Cr/Au alloy, Ni/Pt/Au alloy, one of them constitutes the Ni/Pd/Au alloy, and this transparent oxide layer is by ITO, CTO, ZnO:Al, ZnGa
2O
4, SnO
2: Sb, Ga
2O
3: Sn, AgInO
2: Sn, In
2O
3: Zn, CuAlO
2, LaCuOS, NiO, CuGaO
2, SrCu
2O
2One of them constitutes; And
Positive electrode, be on the surface that is positioned on the coarse contact layer of above-mentioned p type, is not covered by above-mentioned transparency conducting layer, by Ni/Au alloy, Ni/Pt alloy, Ni/Pd alloy, Ni/Co alloy, Pd/Au alloy, Pt/Au alloy, Ti/Au alloy, Cr/Au alloy, Sn/Au alloy, Ta/Au alloy, TiN, TiWN
x(x 〉=0), WSi
yOne of them constitutes (y 〉=0).
2. high brightness gallium nitrate kind LED structure as claimed in claim 1, wherein, described binary nitride is the silicon nitride (Si with specific composition
cN
d, c, d 〉=1).
3. high brightness gallium nitrate kind LED structure as claimed in claim 1, wherein, described binary nitride is the magnesium nitride (Mg with specific composition
gN
h, g, h 〉=1).
4. high brightness gallium nitrate kind LED structure comprises:
Substrate, it is by alumina single crystal (Sapphire), 6H-SiC, 4H-SiC, Si, ZnO, GaAs, spinelle (MgAl
2O
4) and one of the lattice constant monocrystalline oxide that approaches nitride-based semiconductor made;
Resilient coating is positioned on the Side face of aforesaid substrate, by the aluminum indium gallium nitride (Al that specific composition is arranged
aGa
bIn
1-a-bN, 0≤a, b＜1, a+b≤1) constitute;
N type contact layer is positioned on the above-mentioned resilient coating, is made of the gallium nitrate kind material;
Active layers is positioned on the said n type contact layer, is become by the Agencies of indium gallium nitride institute;
Negative electrode is positioned on the upper surface that said n type contact layer do not cover by above-mentioned active layers;
P type coating is positioned on the above-mentioned active layers, is made of p type gallium nitrate kind material;
P type contact layer is positioned on the above-mentioned p type coating, is made of p type gallium nitride;
Mask buffer layer is positioned on the above-mentioned p type contact layer, by a specific composition being arranged and at least a II of being selected from family being arranged and aluminum indium gallium nitride (Al that IV family element mixes with specific concentrations
kIn
lGa
1-k-lN, 0≤k, l＜1, k+1≤1) constitute, thickness is the shade that includes the aluminum indium gallium nitride clustering of a plurality of random distribution between 5 ～100 ;
The coarse contact layer of p type is by p type aluminum indium gallium nitride (Al
eIn
fGa
1-e-fN, 0≤e, f＜1, e+f≤1) constitute, be positioned at above-mentioned mask buffer layer shade on the upper surface of unsheltered above-mentioned p type contact layer, extend upward the thickness between 500 ～10000 , surpass but do not cover the shade of above-mentioned mask buffer layer;
Transparency conducting layer is metal conducting layer or the transparent oxide layer that is positioned on the coarse contact layer of above-mentioned p type and covers its part surface, and this metal conducting layer is by the Ni/Au alloy, the Ni/Pt alloy, the Ni/Pd alloy, Pd/Au alloy, Pt/Au alloy, the Cr/Au alloy, the Ni/Au/Be alloy, Ni/Cr/Au alloy, Ni/Pt/Au alloy, one of them constitutes the Ni/Pd/Au alloy, and this transparent oxide layer is by ITO, CTO, ZnO:Al, ZnGa
2O
4, SnO
2: Sb, Ga
2O
3: Sn, AgInO
2: Sn, In
2O
3: Zn, CuAlO
2, LaCuOS, NiO, CuGaO
2, SrCu
2O
2One of them constitutes; And
Positive electrode, on the surface that is positioned on the coarse contact layer of above-mentioned p type, is not covered by above-mentioned transparency conducting layer, by Ni/Au alloy, Ni/Pt alloy, Ni/Pd alloy, Ni/Co alloy, Pd/Au alloy, Pt/Au alloy, Ti/Au alloy, Cr/Au alloy, Sn/Au alloy, Ta/Au alloy, TiN, TiWN
x(x 〉=0), WSi
yOne of them constitutes (y 〉=0).
5. high brightness gallium nitrate kind LED structure as claimed in claim 4, wherein, described element is a silicon.
6. high brightness gallium nitrate kind LED structure as claimed in claim 4, wherein, described element is a magnesium.
7. high brightness gallium nitrate kind LED structure as claimed in claim 4, wherein, described element is silicon and magnesium.
8. high brightness gallium nitrate kind LED structure as claimed in claim 4, wherein, described concentration is greater than 1 * 10
20Cm
-3
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|---|---|---|---|
| CNB200410098518XA CN100372135C (en) | 2004-12-09 | 2004-12-09 | High brightness gallium nitrate kind LED structure |
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|---|---|---|---|
| CNB200410098518XA CN100372135C (en) | 2004-12-09 | 2004-12-09 | High brightness gallium nitrate kind LED structure |
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| CN1787241A true CN1787241A (en) | 2006-06-14 |
| CN100372135C CN100372135C (en) | 2008-02-27 |
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| CN101364624B (en) * | 2007-08-07 | 2011-09-07 | 新世纪光电股份有限公司 | Substrate having light compensating cavity and light-emitting element formed thereby |
| CN101521258B (en) * | 2009-03-27 | 2013-07-31 | 华灿光电股份有限公司 | Method for improving LED external quantum efficiency |
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| US6091085A (en) * | 1998-02-19 | 2000-07-18 | Agilent Technologies, Inc. | GaN LEDs with improved output coupling efficiency |
| US6291839B1 (en) * | 1998-09-11 | 2001-09-18 | Lulileds Lighting, U.S. Llc | Light emitting device having a finely-patterned reflective contact |
| JP4223797B2 (en) * | 2002-12-19 | 2009-02-12 | 株式会社東芝 | Nitride-based semiconductor light-emitting device and manufacturing method thereof |
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| CN101364621B (en) * | 2007-08-08 | 2010-11-17 | 晶元光电股份有限公司 | Light emitting diode |
| CN101521258B (en) * | 2009-03-27 | 2013-07-31 | 华灿光电股份有限公司 | Method for improving LED external quantum efficiency |
| CN104465898A (en) * | 2014-11-18 | 2015-03-25 | 华灿光电(苏州）有限公司 | Growing method of light-emitting diode epitaxial wafer and light emitting diode epitaxial wafer |
| CN104465898B (en) * | 2014-11-18 | 2017-02-01 | 华灿光电(苏州）有限公司 | Growing method of light-emitting diode epitaxial wafer and light emitting diode epitaxial wafer |
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| CN113451454A (en) * | 2020-09-17 | 2021-09-28 | 重庆康佳光电技术研究院有限公司 | P-type semiconductor layer growth method, LED epitaxial layer and chip |
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| CF01 | Termination of patent right due to non-payment of annual fee |