CN1652359A - LED structure with electrostatic protection function - Google Patents
LED structure with electrostatic protection function Download PDFInfo
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- CN1652359A CN1652359A CNA2004100040293A CN200410004029A CN1652359A CN 1652359 A CN1652359 A CN 1652359A CN A2004100040293 A CNA2004100040293 A CN A2004100040293A CN 200410004029 A CN200410004029 A CN 200410004029A CN 1652359 A CN1652359 A CN 1652359A
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- emitting diode
- protection function
- light emitting
- antistatic protection
- diode construction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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Abstract
The disclosed LED structure includes a base plate, a patternized semiconductor layer, a first pole and second pole. Configured on the base plate, the patternized semiconductor layer is partitioned to first isolated structure and second isolated structure. The said first pole and second pole are connected to place between first isolated structure and second isolated structure. The first pole, second pole and the first isolated structure constitute a LED. The first pole, second pole and the second isolated structure constitute a tapping diode, which is connected to LED in parallel and reverse. The first isolated structure and second isolated structure can be prepared through epitaxy mode in order to make LED possess function of electrostatic protection.
Description
Technical field
The invention relates to a kind of light-emitting diode (light-emitting diode, LED) manufacture method, and particularly relevant for a kind of light emitting diode construction with electrostatic defending (Electro-Static Dischargeprotection, ESD protection) function.
Background technology
The light-emitting diode that is made of III-V group element compound semi-conducting material is the light-emitting component of a kind of wide energy gap (wide bandgap), and its light that can send until ultraviolet light, and is almost contained the wave band of all visible lights from infrared light.Basic (the Internalquantum efficiency) of light-emitting diode, and the light of element takes out efficient (light extractionefficiency), i.e. external quantum efficiency (External quantum efficiency).Wherein, the method that increases internal quantum mainly is to improve the brilliant quality of length of luminescent layer and the design of film layer structure thereof, the key that increases external quantum efficiency then be to reduce light that luminescent layer sends in light-emitting diode inside because of total reflection or energy loss that other effects caused.
Because the luminous efficiency of light-emitting diode constantly promotes, make light-emitting diode replace fluorescent lamp and white heat bulb gradually in some field, for example need Dashboard illumination, the traffic signal light of scanner lamp source, Backlight For Liquid Crystal Display Panels or the front light-source automobile of reaction at a high speed, and general lighting device etc.In addition, light-emitting diode and conventional bulb relatively have absolute advantage, and for example volume is little, life-span length, low-voltage/current drives, be difficult for breaking, do not have significant heat problem when luminous, do not contain mercury (not having pollution problem) and the good characteristics such as (power savings) of luminous efficiency.Have above-mentioned numerous advantage though it should be noted that light-emitting diode, often (Electro-Static Discharge ESD) causes damage to light-emitting diode because of abnormal voltage or static discharge.Therefore, the practice of known techniques is that a light-emitting diode is in parallel with a Zener diode (Zener Diode), is subjected to the destruction of abnormal voltage or static discharge to avoid light-emitting diode.
Please refer to Figure 1A, it illustrates known equivalent electric circuit with package structure for LED of antistatic protection function.For fear of light-emitting diode 30 in when operation, suffer static discharge and destroy.Therefore, light-emitting diode 30 is in parallel with a Zener diode 40, cause light-emitting diode 30 to destroy to prevent static discharge, wherein Zener diode 40 is in the operation of collapse district, so Zener diode 40 can remain on conducting state always.In above-mentioned known package structure for LED with antistatic protection function, when normal forward bias voltage drop puts on the two ends V+ of light-emitting diode 30 and V-, make light-emitting diode 30 normal operations.Yet when abnormal voltage or generation of static electricity, this too high voltage just can be via discharging at the Zener diode 40 of collapse district's work, so light-emitting diode 30 can not caused non-response damage by abnormal voltage or high-tension static and can't operate.
Please refer to Figure 1B, it illustrates the generalized section that has the package structure for LED of antistatic protection function for known.Transparent substrates 32, N type doped gallium nitride layer 34, P type doped gallium nitride layer 36 and electrode 38a, 38b constitute the III-V family gallium nitride light-emitting diode 30 of Figure 1A; And N type doped silicon 42, P type doped silicon 44 and metal level 46a, 46b constitute the Zener diode 40 among the 1A figure.In addition, projection 50a, 50b shown in Figure 1B is generally scolding tin (Solder) material, and projection 50a and 50b respectively with P type doped silicon 44 electric property couplings to N type doped gallium nitride layer 34, and N type doped silicon 42 electric property couplings are to P type doped gallium nitride layer 36, to constitute the equivalent circuit diagram shown in Figure 1A.
Though above-mentioned structure can protect light-emitting diode to avoid the destruction of static discharge, this kind structure must many more several roads step on production process, to make P type doped silicon 44 in N type doped silicon 42.So, the known package structure for LED of this kind with antistatic protection function will expend more processing procedure time and process apparatus for example Ion Implantation Equipment and attached gas supply equipment and vacuum be system etc., and the manufacturing cost that expends also can be higher.
Summary of the invention
Purpose of the present invention is exactly that a kind of light emitting diode construction with antistatic protection function is being provided, and it is in parallel with light-emitting diode by a shunt diode (shunt diode), so light-emitting diode has antistatic protection function.
Based on above-mentioned or other purposes, the present invention proposes a kind of light emitting diode construction with antistatic protection function, it is characterized in that, comprising:
One substrate;
One patterned semiconductor layer, be disposed on this substrate, this patterned semiconductor layer comprises that one first type doping semiconductor layer, is positioned at the luminescent layer on the subregion of this first type doping semiconductor layer, and second a type doping semiconductor layer that is positioned on this luminescent layer, wherein this first type doping semiconductor layer in this patterned semiconductor layer, this luminescent layer and this second type doping semiconductor layer are to divide into one first island structure and one second island structure at least;
One first electrode is connected between this first type doping semiconductor layer and this second type doping semiconductor layer in this second island structure in this first island structure; And
One second electrode, be connected between this second type doping semiconductor layer and this first type doping semiconductor layer in this second island structure in this first island structure, wherein this first electrode, this second electrode and this first island structure are to constitute a light-emitting diode, and this first electrode, this second electrode and this second island structure are to constitute and one of this light-emitting diode reversal connection in parallel shunt diode.
Wherein the material of this substrate comprises aluminium oxide, carborundum, zinc oxide, silicon, gallium phosphide, and GaAs one of them.
Wherein this first type doping semiconductor layer comprises:
One crystal nucleation layer is positioned on this substrate;
One resilient coating, the position is on this crystal nucleation layer; And
One first bond course, the position is on the subregion of this resilient coating.
Wherein the material of this crystal nucleation layer comprises Al
eIn
fGa
1-e-fN, e, f 〉=0; 0≤e+f≤1.
Wherein this crystal nucleation layer is mixed for the N type.
Wherein the material of this resilient coating comprises Al
cIn
dGa
1-c-dN, c, d 〉=0; 0≤c+d＜1.
Wherein this resilient coating mixes for the N type.
Wherein the material of this first bond course comprises Al
xIn
yGa
1-x-yN, x, y 〉=0; 0≤x+y＜1; X＞c.
Wherein this luminescent layer comprises the Al of doping
aIn
bGa
1-a-bN/Al
xIn
yGa
1-x-yN quantum well structures, and a, b 〉=0; 0≤a+b＜1; X, y 〉=0; 0≤x+y＜1; X＞c＞a.
Wherein this luminescent layer mixes for the N type.
Wherein this luminescent layer mixes for the P type.
Wherein this luminescent layer comprises unadulterated Al
aIn
bGa
1-a-bN/Al
xIn
yGa
1-x-yN quantum well structures, and a, b 〉=0; 0≤a+b＜1; X, y 〉=0; 0≤x+y＜1; X＞c＞a.
Wherein this second type doping semiconductor layer comprises:
One second bond course, the position is on this luminescent layer; And
One contact layer, the position is on this second bond course.
Wherein the material of this second bond course comprises Al
xIn
yGa
1-x-yN, x, y 〉=0; 0≤x+y＜1; X＞c.
Wherein also comprise a transparency conducting layer, the position is on this contact layer.
Wherein this contact layer comprises a superlattice strained layer, and this superlattice strained layer comprises the Al that modulation mixes
uIn
vGa
1-u-vN/Al
xIn
yGa
1-x-yN quantum well structures, and u, v 〉=0; 0≤u+v≤1; X, y 〉=0; 0≤x+y＜1; X＞u.
Wherein this superlattice strained layer mixes for the N type.
Wherein this superlattice strained layer mixes for the P type.
Wherein the material of this first electrode comprises Ti/Al, Ti/Al/Ti/Au, Ti/Al/Pt/Au, Ti/Al/Ni/Au, Ti/Al/Pd/Au, Ti/Al/Cr/Au, Ti/Al/Co/Au, Cr/Au, Cr/Pt/Au, Cr/Pd/Au, Cr/Ti/Au, Cr/TiWx/Au, Cr/Al/Cr/Au, Cr/Al/Pt/Au, Cr/Al/Pd/Au, Cr/Al/Ti/Au, Cr/Al/Co/Au, Cr/Al/Ni/Au, Pd/Al/Ti/Au, Pd/Al/Pt/Au, Pd/Al/Ni/Au, Pd/Al/Pd/Au, Pd/Al/Cr/Au, Pd/Al/Co/Au, Nd/Al/Pt/Au, Nd/Al/Ti/Au, Nd/Al/Ni/Au, Nd/Al/Cr/Au Nd/Al/Co/A, Hf/Al/Ti/Au, Hf/Al/Pt/Au, Hf/Al/Ni/Au, Hf/Al/Pd/Au, Hf/Al/Cr/Au, Hf/Al/Co/Au, Zr/Al/Ti/Au, Zr/Al/Pt/Au, Zr/Al/Ni/Au, Zr/Al/Pd/Au, Zr/Al/Cr/Au, Zr/Al/Co/Au, TiNx/Ti/Au, TiNx/Pt/Au, TiNx/Ni/Au, TiNx/Pd/Au, TiNx/Cr/Au, TiNx/Co/Au TiWNx/Ti/Au, TiWNx/Pt/Au, TiWNx/Ni/Au, TiWNx/Pd/Au, TiWNx/Cr/Au, TiWNx/Co/Au, NiAl/Pt/Au, NiAl/Cr/Au, NiAl/Ni/Au, NiAl/Ti/Au, Ti/NiAl/Pt/Au, Ti/NiAl/Ti/Au, Ti/NiAl/Ni/Au, Ti/NiAl/Cr/Au one of them.
Wherein the material of this second electrode comprise Ni/Au, Ni/Pt, Ni/Pd, Ni/Co, Pd/Au, Pt/Au, Ti/Au, Cr/Au, Sn/Au, Ta/Au, TiN, TiWNx and WSix one of them.
Wherein the material of this second electrode comprise a N type oxidic, transparent, conductive layers and a P type oxidic, transparent, conductive layers one of them.
Wherein this N type oxidic, transparent, conductive layers comprises ITO, CTO, ZnO:Al, ZnGa
2O
4, SnO
2: Sb, Ga
2O
3: Sn, AgInO
2: Sn and In
2O
3: Zn one of them.
Wherein this P type oxidic, transparent, conductive layers comprises CuAlO
2, LaCuOS, NiO, CuGaO
2With SrCu
2O
2One of them.
Wherein this shunt diode comprises a Schottky diode.
Wherein this shunt diode comprises a Zener diode.
Based on above-mentioned, in the light emitting diode construction with antistatic protection function of the present invention, light-emitting diode and shunt diode are to make simultaneously, and shunt diode can be protected light-emitting diode to avoid static discharge to destroy.In addition, light-emitting diode and shunt diode are to make simultaneously, so can directly save manufacturing cost.
Description of drawings
For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, a preferred embodiment cited below particularly, and conjunction with figs. are described in detail below, wherein:
Figure 1A illustrates known equivalent electric circuit with package structure for LED of antistatic protection function.
Figure 1B illustrates known generalized section with package structure for LED of antistatic protection function.
Fig. 2 illustrates a kind of schematic diagram with light emitting diode construction of antistatic protection function of preferred embodiment of the present invention.
Fig. 3 illustrates the equivalent circuit diagram of the light emitting diode construction of Fig. 2.
Fig. 4 illustrates a kind of schematic top plan view with light emitting diode construction of antistatic protection function of preferred embodiment of the present invention.
Embodiment
Please refer to Fig. 2, it illustrates a kind of schematic diagram with light emitting diode construction of antistatic protection function of preferred embodiment of the present invention.Light emitting diode construction for example comprises substrate 110, patterned semiconductor layer 120, first electrode 160 and second electrode 170.Wherein, patterned semiconductor layer 120 is to be disposed on the substrate 110, and patterned semiconductor layer 120 for example comprises the first type doping semiconductor layer 122, be positioned at the luminescent layer 124 on the subregion of the first type doping semiconductor layer 122, and is positioned at the second type doping semiconductor layer 126 on the luminescent layer 124.In addition, the first type doping semiconductor layer 122, luminescent layer 124 and the second type doping semiconductor layer 126 are to divide into first island structure 150 and second island structure 160 at least.
Refer again to Fig. 2, first electrode 130 is between the first type doping semiconductor layer 122 and the second type doping semiconductor layer 126 in second island structure 160 that is connected in first island structure 150, and second electrode 140 is between the second type doping semiconductor layer 126 and the first type doping semiconductor layer 122 in second island structure 160 that is connected in first island structure 150.In addition, first electrode 130, second electrode 140 and first island structure 150 are to constitute light-emitting diode 200, and first electrode 130, second electrode 140 and second island structure 160 are to constitute shunt diode 300, it for example can be Schottky diode, Zener diode or other diode structure, and shunt diode 300 is and light-emitting diode 200 reversal connections in parallel, so that light-emitting diode 200 is not vulnerable to the destruction of static discharge.
In the present embodiment, the production method of first island structure 150 and second island structure 160 and existing process-compatible are so present embodiment can be integrated shunt diode 300 and light-emitting diode 200 at an easy rate.As shown in Figure 2, being produced as follows of shunt diode 300 and light-emitting diode 200 in the present embodiment: at first, prior to forming the first type doping semiconductor layer 122, luminescent layer 124 and the second type doping semiconductor layer 126 on the substrate 110 in regular turn, and these semiconductor layers for example are to be made on the substrate 110 by brilliant mode of heap of stone, after again with the formed first type doping semiconductor layer 122, luminescent layer 124 and the second type doping semiconductor layer, 126 patternings, to form first island structure 150 and second island structure 160 (being illustrated) as Fig. 2.Because substrate 110 itself is to belong to the insulation material, so the first above-mentioned island structure 150 and second island structure 160 can be considered electrical isolation each other.At last, form first electrode 130 that specific pattern distributes, second electrode 140 on aforesaid substrate 110, promptly finish the program of shunt diode 300 and light-emitting diode 200 reversal connections in parallel.
The first above-mentioned type doping semiconductor layer 122 for example comprises crystal nucleation layer 122a, resilient coating 122b and the first bond course 122c, wherein crystal nucleation layer 122a is positioned on the substrate 110, and resilient coating 122b be the position on crystal nucleation layer 122a, and the first bond course 122c be the position on the subregion of resilient coating 122b.In addition, the second type doping semiconductor layer 126 for example comprises the second bond course 126a, contact layer 126b and transparency conducting layer 126c, wherein the second bond course 126a is that the position is on luminescent layer 124, and contact layer 126b is position 126c on second bond course, and transparency conducting layer 126c is positioned on the contact layer 126b.
Below will do more detailed description at the light emitting diode construction that has antistatic protection function among the present invention.Substrate 110 for example comprises aluminium oxide, carborundum, zinc oxide, silicon (Si), gallium phosphide or GaAs.In addition, the crystal nucleation layer 122a of the first type doping semiconductor layer 122 for example comprises Al
eIn
fGa
1-e-fN, e, f 〉=0; 0≤e+f≤1, wherein crystal nucleation layer 112a mixes for the N type.In addition, resilient coating 112b for example comprises Al
cIn
dGa
1-c-dN, c, d 〉=0; 0≤c+d＜1, wherein resilient coating 112b for example is the doping of N type, and the first bond course 112c for example comprises Al
xIn
yGa1-x-yN, x, y 〉=0; 0≤x+y＜1; X＞c.
Above-mentioned luminescent layer 120 for example comprises the Al of doping
aIn
bGa
1-a-bN/Al
xIn
yGa
1-x-yN quantum well structures, and a, b 〉=0; 0≤a+b＜1; X, y 〉=0; 0≤x+y＜1; X＞c＞a, wherein for example the N type mixes luminescent layer 120 or the P type mixes.In addition, the luminescent layer 120 of present embodiment also can adopt unadulterated Al
aIn
bGa
1-a-bN/Al
xIn
yGa
1-x-yN quantum well structures, and a, b 〉=0; 0≤a+b＜1; X, y 〉=0; 0≤x+y＜1; X＞c＞a.
In the second above-mentioned type doping semiconductor layer 126, the second bond course 126a for example comprises Al
xIn
yGa
1-x-yN, x, y 〉=0; 0≤x+y＜1; X＞c, and contact layer 126b for example is the superlattice strained layer, wherein the superlattice strained layer for example comprises the Al that modulation mixes
uIn
vGa
1-u-vN/Al
xIn
yGa1-x-yN quantum well structures, and u, v 〉=0; 0≤u+v≤1; X, y 〉=0; 0≤x+y＜1; X＞u, and the superlattice strained layer for example the N type mixes or the P type mixes, and transparency conducting layer 126c indium tin oxide (ITO) for example.
In the present embodiment, second electrode 140 for example comprises Ni/Au, Ni/Pt, Ni/Pd, Ni/Co, Pd/Au, Pt/Au, Ti/Au, Cr/Au, Sn/Au, Ta/Au, TiN, TiWNx or Wsix, and second electrode 140 more can adopt for example N type oxidic, transparent, conductive layers or P type oxidic, transparent, conductive layers, and N type oxidic, transparent, conductive layers for example comprises ITO, CTO, ZnO:Al, ZnGa
2O
4, SnO
2: Sb, Ga
2O
3: Sn, AgInO
2: Sn or In
2O
3: Zn, wherein P type oxidic, transparent, conductive layers for example comprises CuAlO
2, LaCuOS, NiO, CuGaO
2Or SrCu
2O
2
In the above-described embodiment, transparency conducting layer 126c is disposed on the contact layer 126b, but another preferred embodiment of the present invention does not have a transparency conducting layer 126c, also can reach purpose of the present invention.
Please refer to Fig. 3, it illustrates the equivalent circuit diagram of the light emitting diode construction with antistatic protection function of Fig. 2.Shunt diode 300 is in parallel with light-emitting diode 200, and shunt diode 300 is to be reversal connection, to prevent that light-emitting diode 200 from suffering the destruction of abnormal voltage or static discharge, wherein shunt diode 300 is in the operation of collapse district, so shunt diode 300 can remain on conducting state.When normal forward bias voltage drop puts on the two ends V+ of light-emitting diode 200 and V-, can produce forward current by the P of light-emitting diode 200, the carrier that N connects face, make that light-emitting diode 200 is luminous.Yet, when abnormal voltage or generation of static electricity, this too high voltage just can discharge via the shunt diode 300 in collapse district operation, and without light-emitting diode 200, so light-emitting diode 200 can not destroyed by abnormal voltage or high-tension static discharge.
Please refer to Fig. 4, it illustrates a kind of schematic top plan view with light emitting diode construction of antistatic protection function of preferred embodiment of the present invention.First electrode 130 is to connect the resilient coating 122b of light-emitting diode 200 and the transparency conducting layer 126c of shunt diode 300, and second electrode 140 is to connect the transparency conducting layer 126c of light-emitting diode 200 and the resilient coating 122b of shunt diode 300.
Based on above-mentioned, the light emitting diode construction with antistatic protection function of the present invention has the following advantages:
One, the light emitting diode construction with antistatic protection function of the present invention, light-emitting diode is in parallel with shunt diode, wherein shunt diode is to be reversal connection, so abnormal voltage or high-tension static can discharge via shunt diode, make light-emitting diode have long useful life.
Two, the light emitting diode construction with antistatic protection function of the present invention, light-emitting diode and shunt diode can be made simultaneously, and wherein light-emitting diode is identical with the material of shunt diode, therefore need not increase fabrication steps, and then saves manufacturing cost.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; anyly have the knack of this operator; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking accompanying the claim person of defining.
Claims (25)
1. the light emitting diode construction with antistatic protection function is characterized in that, comprising:
One substrate;
One patterned semiconductor layer, be disposed on this substrate, this patterned semiconductor layer comprises that one first type doping semiconductor layer, is positioned at the luminescent layer on the subregion of this first type doping semiconductor layer, and second a type doping semiconductor layer that is positioned on this luminescent layer, wherein this first type doping semiconductor layer in this patterned semiconductor layer, this luminescent layer and this second type doping semiconductor layer are to divide into one first island structure and one second island structure at least;
One first electrode is connected between this first type doping semiconductor layer and this second type doping semiconductor layer in this second island structure in this first island structure; And
One second electrode, be connected between this second type doping semiconductor layer and this first type doping semiconductor layer in this second island structure in this first island structure, wherein this first electrode, this second electrode and this first island structure are to constitute a light-emitting diode, and this first electrode, this second electrode and this second island structure are to constitute and one of this light-emitting diode reversal connection in parallel shunt diode.
2. the light emitting diode construction with antistatic protection function as claimed in claim 1 is characterized in that wherein the material of this substrate comprises aluminium oxide, carborundum, zinc oxide, silicon, gallium phosphide, and GaAs one of them.
3. the light emitting diode construction with antistatic protection function as claimed in claim 1 is characterized in that, wherein this first type doping semiconductor layer comprises:
One crystal nucleation layer is positioned on this substrate;
One resilient coating, the position is on this crystal nucleation layer; And
One first bond course, the position is on the subregion of this resilient coating.
4. the light emitting diode construction with antistatic protection function as claimed in claim 3 is characterized in that wherein the material of this crystal nucleation layer comprises Al
eIn
fGa
1-e-fN, e, f 〉=0; 0≤e+f≤1.
5. the light emitting diode construction with antistatic protection function as claimed in claim 4 is characterized in that, wherein this crystal nucleation layer is mixed for the N type.
6. the light emitting diode construction with antistatic protection function as claimed in claim 3 is characterized in that wherein the material of this resilient coating comprises Al
cIn
dGa
1-c-dN, c, d 〉=0; 0≤c+d＜1.
7. the light emitting diode construction with antistatic protection function as claimed in claim 6 is characterized in that, wherein this resilient coating mixes for the N type.
8. the light emitting diode construction with antistatic protection function as claimed in claim 6 is characterized in that wherein the material of this first bond course comprises Al
xIn
yGa
1-x-yN, x, y 〉=0; 0≤x+y＜1; X＞c.
9. the light emitting diode construction with antistatic protection function as claimed in claim 8 is characterized in that wherein this luminescent layer comprises the Al of doping
aIn
bGa
1-a-bN/Al
xIn
yGa
1-x-yN quantum well structures, and a, b 〉=0; 0≤a+b＜1; X, y 〉=0; 0≤x+y＜1; X＞c＞a.
10. the light emitting diode construction with antistatic protection function as claimed in claim 9 is characterized in that, wherein this luminescent layer mixes for the N type.
11. the light emitting diode construction with antistatic protection function as claimed in claim 9 is characterized in that, wherein this luminescent layer mixes for the P type.
12. the light emitting diode construction with antistatic protection function as claimed in claim 8 is characterized in that wherein this luminescent layer comprises unadulterated Al
aIn
bGa
1-a-bN/Al
xIn
yGa
1-x-yN quantum well structures, and a, b 〉=0; 0≤a+b＜1; X, y 〉=0; 0≤x+y＜1; X＞c＞a.
13. the light emitting diode construction with antistatic protection function as claimed in claim 6 is characterized in that, wherein this second type doping semiconductor layer comprises:
One second bond course, the position is on this luminescent layer; And
One contact layer, the position is on this second bond course.
14. the light emitting diode construction with antistatic protection function as claimed in claim 13 is characterized in that wherein the material of this second bond course comprises Al
xIn
yGa
1-x-yN, x, y 〉=0; 0≤x+y＜1; X＞c.
15. the light emitting diode construction with antistatic protection function as claimed in claim 13 is characterized in that, wherein also comprises a transparency conducting layer, the position is on this contact layer.
16. the light emitting diode construction with antistatic protection function as claimed in claim 13 is characterized in that, wherein this contact layer comprises a superlattice strained layer, and this superlattice strained layer comprises the Al that modulation mixes
uIn
vGa
1-u-vN/Al
xIn
yGa
1-x-yN quantum well structures, and u, v 〉=0; 0≤u+v≤1; X, y 〉=0; 0≤x+y＜1; X＞u.
17. the light emitting diode construction with antistatic protection function as claimed in claim 16 is characterized in that, wherein this superlattice strained layer mixes for the N type.
18. the light emitting diode construction with antistatic protection function as claimed in claim 16 is characterized in that, wherein this superlattice strained layer mixes for the P type.
19. the light emitting diode construction with antistatic protection function as claimed in claim 1, it is characterized in that wherein the material of this first electrode comprises Ti/Al, Ti/Al/Ti/Au, Ti/Al/Pt/Au, Ti/Al/Ni/Au, Ti/Al/Pd/Au, Ti/Al/Cr/Au, Ti/Al/Co/Au, Cr/Au, Cr/Pt/Au, Cr/Pd/Au, Cr/Ti/Au, Cr/TiWx/Au, Cr/Al/Cr/Au, Cr/Al/Pt/Au, Cr/Al/Pd/Au, Cr/Al/Ti/Au, Cr/Al/Co/Au, Cr/Al/Ni/Au, Pd/Al/Ti/Au, Pd/Al/Pt/Au, Pd/Al/Ni/Au, Pd/Al/Pd/Au, Pd/Al/Cr/Au, Pd/Al/Co/Au, Nd/Al/Pt/Au, Nd/Al/Ti/Au, Nd/Al/Ni/Au, Nd/Al/Cr/AuNd/Al/Co/A, Hf/Al/Ti/Au, Hf/Al/Pt/Au, Hf/Al/Ni/Au, Hf/Al/Pd/Au, Hf/Al/Cr/Au, Hf/Al/Co/Au, Zr/Al/Ti/Au, Zr/Al/Pt/Au, Zr/Al/Ni/Au, Zr/Al/Pd/Au, Zr/Al/Cr/Au, Zr/Al/Co/Au, TiNx/Ti/Au, TiNx/Pt/Au, TiNx/Ni/Au, TiNx/Pd/Au, TiNx/Cr/Au, TiNx/Co/Au TiWNx/Ti/Au, TiWNx/Pt/Au, TiWNx/Ni/Au, TiWNx/Pd/Au, TiWNx/Cr/Au, TiWNx/Co/Au, NiAl/Pt/Au, NiAl/Cr/Au, NiAl/Ni/Au, NiAl/Ti/Au, Ti/NiAl/Pt/Au, Ti/NiAl/Ti/Au, Ti/NiAl/Ni/Au, Ti/NiAl/Cr/Au one of them.
20. the light emitting diode construction with antistatic protection function as claimed in claim 1, it is characterized in that, wherein the material of this second electrode comprise Ni/Au, Ni/Pt, Ni/Pd, Ni/Co, Pd/Au, Pt/Au, Ti/Au, Cr/Au, Sn/Au, Ta/Au, TiN, TiWNx and WSix one of them.
21. the light emitting diode construction with antistatic protection function as claimed in claim 1 is characterized in that, wherein the material of this second electrode comprise a N type oxidic, transparent, conductive layers and a P type oxidic, transparent, conductive layers one of them.
22. the light emitting diode construction with antistatic protection function as claimed in claim 21 is characterized in that, wherein this N type oxidic, transparent, conductive layers comprises ITO, CTO, ZnO:Al, ZnGa
2O
4, SnO
2: Sb, Ga
2O
3: Sn, AgInO
2: Sn and In
2O
3: Zn one of them.
23. the light emitting diode construction with antistatic protection function as claimed in claim 21 is characterized in that, wherein this P type oxidic, transparent, conductive layers comprises CuAlO
2, LaCuOS, NiO, CuGaO
2With SrCu
2O
2One of them.
24. the light emitting diode construction with antistatic protection function as claimed in claim 1 is characterized in that wherein this shunt diode comprises a Schottky diode.
25. the light emitting diode construction with antistatic protection function as claimed in claim 1 is characterized in that, wherein this shunt diode comprises a Zener diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2004100040293A CN1652359A (en) | 2004-02-04 | 2004-02-04 | LED structure with electrostatic protection function |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2004100040293A CN1652359A (en) | 2004-02-04 | 2004-02-04 | LED structure with electrostatic protection function |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1652359A true CN1652359A (en) | 2005-08-10 |
Family
ID=34867606
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2004100040293A Pending CN1652359A (en) | 2004-02-04 | 2004-02-04 | LED structure with electrostatic protection function |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1652359A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102299141A (en) * | 2011-09-15 | 2011-12-28 | 西安中为光电科技有限公司 | Method for directly manufacturing electronic static discharge (ESD) protection circuit on light-emitting diode (LED) chip |
| CN102324451A (en) * | 2011-09-15 | 2012-01-18 | 西安中为光电科技有限公司 | Method for manufacturing ESD protection circuit on LED chip by sacrificing luminescence area |
| CN104995753A (en) * | 2013-02-15 | 2015-10-21 | 首尔伟傲世有限公司 | LED chip resistant to electrostatic discharge and LED package including the same |
| US9929315B2 (en) | 2013-02-15 | 2018-03-27 | Seoul Viosys Co., Ltd. | LED chip resistant to electrostatic discharge and LED package including the same |
| CN108091638A (en) * | 2017-12-20 | 2018-05-29 | 聚灿光电科技股份有限公司 | Led chip and preparation method thereof |
| CN109742199A (en) * | 2018-12-29 | 2019-05-10 | 中联西北工程设计研究院有限公司 | A kind of blue light light emitting diode (LED) chip with vertical structure and preparation method thereof of band protection circuit |
| WO2023070526A1 (en) * | 2021-10-29 | 2023-05-04 | 厦门三安光电有限公司 | Light emitting diode structure and light emitting device |
-
2004
- 2004-02-04 CN CNA2004100040293A patent/CN1652359A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102299141A (en) * | 2011-09-15 | 2011-12-28 | 西安中为光电科技有限公司 | Method for directly manufacturing electronic static discharge (ESD) protection circuit on light-emitting diode (LED) chip |
| CN102324451A (en) * | 2011-09-15 | 2012-01-18 | 西安中为光电科技有限公司 | Method for manufacturing ESD protection circuit on LED chip by sacrificing luminescence area |
| CN104995753A (en) * | 2013-02-15 | 2015-10-21 | 首尔伟傲世有限公司 | LED chip resistant to electrostatic discharge and LED package including the same |
| US9929315B2 (en) | 2013-02-15 | 2018-03-27 | Seoul Viosys Co., Ltd. | LED chip resistant to electrostatic discharge and LED package including the same |
| CN104995753B (en) * | 2013-02-15 | 2018-09-07 | 首尔伟傲世有限公司 | Light-emitting diode chip for backlight unit and LED package |
| CN108091638A (en) * | 2017-12-20 | 2018-05-29 | 聚灿光电科技股份有限公司 | Led chip and preparation method thereof |
| CN109742199A (en) * | 2018-12-29 | 2019-05-10 | 中联西北工程设计研究院有限公司 | A kind of blue light light emitting diode (LED) chip with vertical structure and preparation method thereof of band protection circuit |
| WO2023070526A1 (en) * | 2021-10-29 | 2023-05-04 | 厦门三安光电有限公司 | Light emitting diode structure and light emitting device |
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