CN104112757B - Luminescent device, light emitting device package, the manufacture method and illuminator of luminescent device - Google Patents

Luminescent device, light emitting device package, the manufacture method and illuminator of luminescent device Download PDF

Info

Publication number
CN104112757B
CN104112757B CN201410260976.2A CN201410260976A CN104112757B CN 104112757 B CN104112757 B CN 104112757B CN 201410260976 A CN201410260976 A CN 201410260976A CN 104112757 B CN104112757 B CN 104112757B
Authority
CN
China
Prior art keywords
layer
conductive
luminescent device
semiconductor layer
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201410260976.2A
Other languages
Chinese (zh)
Other versions
CN104112757A (en
Inventor
丁焕熙
李尚烈
宋俊午
崔光基
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Lekin Semiconductor Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of CN104112757A publication Critical patent/CN104112757A/en
Application granted granted Critical
Publication of CN104112757B publication Critical patent/CN104112757B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

The invention provides a kind of luminescent device, light emitting device package, luminescent device manufacture method and illuminator.Included according to the luminescent device of embodiment：Conductive support member；Ray structure on conductive support member, the ray structure includes the first conductive semiconductor layer, the second conductive semiconductor layer and the active layer between the first and second conductive semiconductor layers；And the protection device on ray structure.

Description

Luminescent device, light emitting device package, the manufacture method and illuminator of luminescent device
The application is the Application No. 201110041640.3 submitted for 18th for 2 months in 2011, entitled " photophore The divisional application of the patent application of part, light emitting device package, the manufacture method and illuminator of luminescent device ".
Technical field
The present invention relates to luminescent device, the manufacture method of luminescent device and light emitting device package.
Background technology
Light emitting diode (LED) is the light emitting semiconductor device for converting electrical current into light.LED can be produced with high brightness Light so that LED has been widely used as the light source for display device, vehicle or lighting apparatus.In addition, LED can The white with excellent light efficiency is shown by using the LED of fluorophor or combination with a variety of colors.
In order to improve LED brightness and performance, carried out it is various trial come improve light extraction structures, active layer structure, The structure of current expansion, electrode structure and LED package.
The content of the invention
Embodiment is provided with the novel luminescent device of structure, the manufacture method of luminescent device and luminescent device envelope Dress.
Embodiment, which is provided, can improve the luminescent device of withstanding voltage characteristic, and luminescent device manufacture method.
Included according to the luminescent device of embodiment：Conductive support member；The second conduction on conductive support member is partly led Body layer；Active layer in the second conductive semiconductor layer；The first conductive semiconductor layer on active layer；And it is conductive first Protection device on semiconductor layer.
A kind of manufacture method of luminescent device can comprise the steps：Led by sequentially stacking first on a silicon substrate Electric semiconductor layer, active layer and the second conductive semiconductor layer form ray structure；Conductive supporting is formed on ray structure Component；The main body of protection device is formed by optionally removing silicon substrate；First conductive dopant is injected into protection device Main body in；Doped portion is formed by the way that the second conductive dopant is injected into the bottom of main body；And in main body and doping Electrode is formed at least one in point.
Embodiment can be provided with the novel luminescent device of structure, the manufacture method of luminescent device and photophore Part is encapsulated.
Embodiment, which can be provided, can improve the luminescent device of withstanding voltage characteristic, and luminescent device manufacture method.
Brief description of the drawings
Fig. 1 is the sectional view of the luminescent device according to first embodiment；
Fig. 2 is the plan of the luminescent device according to first embodiment；
Fig. 3 is the circuit diagram of the operating principle of the protection device for the luminescent device for showing Fig. 1；
Fig. 4 to Figure 11 is the sectional view for the manufacture method for showing the luminescent device according to first embodiment；
Figure 12 is the sectional view of the luminescent device according to second embodiment；
Figure 13 is the sectional view of the luminescent device according to 3rd embodiment；
Figure 14 is the sectional view of the luminescent device according to fourth embodiment；
Figure 15 is the sectional view for showing the light emitting device package including luminescent device according to embodiment；
Figure 16 be show it is saturating according to the decomposition of the back light unit for including luminescent device or light emitting device package of embodiment View；And
Figure 17 is the perspective view for showing the lighting unit for including luminescent device or light emitting device package according to embodiment.
Embodiment
In describing the embodiments of the present, it will be appreciated that when layer (or film), region, pattern or structure are referred to as in another When one substrate, another layer (or film), another region, another pad or another pattern " on " or " under ", it can " directly " On another substrate, layer (or film), region, pad or pattern or can also either exist one or more " indirectly " Intermediate layer.The position of such layer is described by reference to accompanying drawing.
For the sake of describing and understanding, the thickness and size of every layer be shown in the drawings are exaggerated, omit or shown Meaning property is drawn.In addition, the size of element does not reflect full-size(d) completely.
Hereinafter, it will the luminescent device according to embodiment, the manufacture method of luminescent device are described with reference to the drawings, lighted Device is encapsulated and illuminator.
Fig. 1 is the sectional view for showing the luminescent device 100 according to first embodiment, and Fig. 2 is the flat of luminescent device 100 Face figure.
With reference to Fig. 1 and Fig. 2, luminescent device 100 includes：It is conductive support member 160, attached on conductive support member 160 Layer 158, the protection component 155 on the periphery of adhesion layer 158 or the top surface of conductive support member 160, attached The reflecting layer 157 on layer 158, the ohmic contact layer 156 on reflecting layer 157, in ohmic contact layer 156 and protection component Ray structure 145 on 155, the first electrode 170 on ray structure 145 and the protection device on ray structure 145 115。
Ray structure 145 at least includes：First conductive semiconductor layer 130, having below the first conductive semiconductor layer 130 Active layer 140 and the second conductive semiconductor layer 150 below active layer 140.First conductive semiconductor layer 130, active layer 140 and second conductive semiconductor layer 150 constitute produce light structure.
Conductive support member 160 supports ray structure 145, and is provided together to luminescent device 100 with first electrode 170 Electric power.
Conductive support member 160 can include Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo and partly leading doped with impurity At least one in body substrate.
Adhesion layer 158 can be formed on conductive support member 160.Adhesion layer 158 is binder course to improve conductive supporting Interface bond strength between component 160 and ray structure 145.
Adhesion layer 158 can include at least one in Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag and Ta.Separately Outside, adhesion layer 158, which can have, includes the sandwich construction of multiple heterospheres.
Conductive support member 160 can be formed by depositing process or depositing operation.If conductive support member 160 has Sufficient attachment characteristic, then adhesion layer 158 can be omitted.
Protection component 155 can be formed in the periphery of the top surface of adhesion layer 158 or conductive support member 160 On.Protection component 155 can prevent the electric short circuit between ray structure 145 and conductive support member 160.
Component 155 is protected to include the material with electrical insulative property.For example, protection component 155 can include from By SiO2、SixOy、Si3N4、SixNy、SiOxNy、Al2O3、TiO2, ITO, AZO and ZnO composition group in select at least one It is individual.
Reflecting layer 157 can be formed on adhesion layer 158.Reflecting layer 157 is reflected from the incident light of ray structure 145, with Improve the luminous efficiency of luminescent device 100.
Reflecting layer 157 can include the material with high reflectance.For example, reflecting layer 157 can by using including from The metal of at least one or gold selected in the group being made up of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au and Hf Belong to alloy and formed.In addition, reflecting layer 157 can by using above-mentioned metal or metal alloy, and such as IZO, IZTO, IAZO, IGZO, IGTO, AZO or ATO transmissive conductive material and be prepared as multilayer.Include for example, reflecting layer can have IZO/Ni, AZO/Ag, IZO/Ag/Ni or AZO/Ag/Ni stacked structure.Reflecting layer 157 is set to improve light efficiency, and Reflecting layer 157 can not have to be required.Ohmic contact layer 156 is formed on reflecting layer 157.
The formation Ohmic contact of ohmic contact layer 156 so that electric current can flow between reflecting layer 157 and ray structure 145 It is dynamic.
If reflecting layer 157 forms the Ohmic contact relative to ray structure 145, then ohmic contact layer can be omitted 156, but embodiment not limited to this.
Ohmic contact layer 156 can include at least one selected from the group being made up of ITO, Ni, Pt, Ir, Rh and Ag, But embodiment not limited to this.Ohmic contact layer 156 can optionally use transmissive conductive layer and metal.Ohmic contact layer 156 can be by using from by ITO (indium tin oxide), IZO (indium-zinc oxide), IZTO (indium zinc tin oxide), IAZO (indiums Aluminium zinc oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin-oxide), AZO (aluminium zinc oxide), ATO (antimony tin oxygen Compound), GZO (gallium zinc oxide), IrOx、RuOx、RuOx/ITO、Ni、Ag、Ni/IrOx/ Au and Ni/IrOx/ Au/ITO groups Into group in select at least one and be prepared as individual layer or multilayer.
Ray structure 145 can be formed on ohmic contact layer 156 and protection component 155.Ray structure 145 includes multiple Semiconductor layer is to produce light.For example, ray structure 145 at least includes：First conductive semiconductor layer 130, first conduction partly lead Active layer 140 below body layer 130 and the second conductive semiconductor layer 150 below active layer 140.
For example, the second conductive semiconductor layer 150 can include p-type semiconductor layer.P type semiconductor layer can include having InxAlyGa1-x-yThe semi-conducting material of N (0≤x≤1,0≤y≤1,0≤x+y≤1) composition formula.For example, p-type semiconductor layer InAlGaN, GaN, AlGaN, InGaN, AlN of the p-type dopant doped with such as Mg, Zn, Ca, Sr or Ba can be included Or InN.
Active layer 140 is formed in the second conductive semiconductor layer 150.Active layer 140 passes through via the first conductive semiconductor 130 injected electrons of layer (or hole) and being combined via the injected holes of the second conductive semiconductor layer 150 (or electronics), It is used for the difference in band gap of the energy band of the intrinsic material of active layer 140 based on basis and launches light.
Active layer 140 can have single quantum, MQW (MQW) structure, quantum-dot structure or quantum wire At least one in structure, but embodiment not limited to this.
Active layer 140 can include having InxAlyGa1-x-yN (0≤x≤1,0≤y≤1,0≤x+y≤1) composition formula Semi-conducting material.If active layer 140 has MQW structures, active layer 140 can include InGaN well layer/GaN barrier layers Stacked structure.
Doped with n-type or p-type dopant clad (not shown) can be formed in active layer 140 above and/or under Face.Clad can include AlGaN layer or InAlGaN layers.
First semiconductor layer 130 can be formed on active layer 140.In addition, pattern or roughness 131 can be formed in On the top surface of first conductive semiconductor layer 130, to improve the light extraction efficiency of luminescent device 100.
Undoped with semiconductor layer can be formed on the first semiconductor layer 130, but embodiment not limited to this.
First conductive semiconductor layer can include n-type semiconductor layer.N-type semiconductor layer can include having InxAlyGa1-x-yThe semi-conducting material of N (0≤x≤1,0≤y≤1,0≤x+y≤1) composition formula.For example, the first conduction is partly led Body layer can be selected from the group being made up of InAlGaN, GaN, AlGaN, InGaN, AlN and InN, and can be doped with Such as Si, Ge or Sn n-type dopant.
On the contrary, the first conductive semiconductor layer 130 can include p-type semiconductor layer, and the second conductive type semiconductor Layer 150 can include n-type semiconductor layer.In addition, the 3rd conductive semiconductor including n-type semiconductor layer or p-type semiconductor layer Layer can be formed in the first conductive semiconductor layer 130.Therefore, luminescent device 100 can include NP, PN, NPN and positive-negative-positive At least one in structure.In addition, the doping concentration of the impurity in the first and second conductive semiconductor layers can be it is uniform or It is irregular.In other words, ray structure 145 can have various constructions, and embodiment not limited to this.
Current barrier layer (not shown) can be formed between the conductive semiconductor layer 150 of ohmic contact layer 156 and second. The top surface of current barrier layer contacts the second conductive semiconductor layer 150, and basal surface and the contacts side surfaces Europe of current barrier layer Nurse contact layer 156.
At least a portion of current barrier layer can be overlapping with first electrode 170.Therefore, current barrier layer can limit electricity The shortest path flowed between first electrode 170 and conductive support member 160 flows through, enabling improve luminescent device 100 Luminous efficiency.
Current barrier layer can include having the conduction lower than the electric conductivity in reflecting layer 157 or ohmic contact layer 156 Property material, with the second conductive semiconductor layer 150 formation Schottky contacts material or insulating material.
For example, current barrier layer can include including ZnO, SiO2、SiON、Si3N4、Al2O3、TiO2, in Ti, Al and Cr At least one.
First electrode 170 and protection device 115 can be formed in the first conductive semiconductor layer 130.
First electrode 170 and conductive support member 160 provide power to luminescent device 100.For example, first electrode 170 include at least one in Al, Ti, Cr, Ni, Cu and Au.First electrode 170 can be prepared as including by using The sandwich construction of multilayer formed by dissimilar materials.
Protection device 115 is formed in the first conductive semiconductor layer 130.Preferably, protection device 115 is formed leads first On the relatively periphery of the top surface of electric semiconductor layer 130, to minimize the absorption for the light launched from ray structure 145.
Protection device 115 can protect ray structure 145 from being led due to overvoltage, overcurrent or backward voltage Cause surge or the static discharge occurred.That is, when producing overvoltage, overcurrent or backward voltage, electric current flows to protector Part 115, without flowing to ray structure, so as to prevent ray structure 145 to be damaged, so as to improve luminescent device 100 Withstanding voltage characteristic.
Protection device 115 can be formed in the first conductive semiconductor layer 130 of ray structure 145.For example, can pass through The doped silicon in semiconductor fabrication process and protection device 115 is formed with micro-dimension, therefore, protection device 115 can not have Its original purpose is realized in the case of the luminous efficiency for having reduction luminescent device 100.
Protection device 115 includes：Conductive member 110a, it is fabricated from a silicon and is doped with p-type dopant；Doping Part 112, it forms on conductive member 110a and is doped with n-type dopant；The 3rd electricity on conductive member 110a Pole 114；And the second electrode 116 on doped portion 112.
Conductive member 110a includes silicon materials, and can optionally remove silicon substrate by using etch process and shape Into.In detail, the silicon substrate for growing ray structure 145 is optionally removed, to form the conductive member of protection device 115 110a, so as to simply perform manufacturing process with high efficiency.
Conductive member 110a is doped with p-type dopant, so that conductive member 110a constitutes p-type semiconductor.P-type dopant At least one in Mg, Be and B can be included.
Doped portion 112 can be formed in conductive structure by the way that n-type dopant to be injected to conductive member 110a top surface On part 110a.N-type dopant can include at least one in N, P, As and Sb.
If the first conductive semiconductor layer 130 is p-type semiconductor layer, and the second conductive semiconductor layer 150 is that n-type is partly led Body layer, then n-type dopant can be injected into conductive member and p-type dopant is injected into doped portion 112.
3rd electrode 114 is formed on conductive member 110a, and second electrode 116 is formed on doped portion 112.The Two and the 3rd electrode 116 and 114 is equipped with the wiring for being electrically coupled to outer electrode.
First and the 3rd electrode 170 and 114 can be electrically coupled to same outer electrode, and conductive support member 160 and second electrode 116 be electrically connected to same outer electrode.
Fig. 3 is the circuit diagram for the operating principle for showing protection device 115.
With reference to Fig. 3, protection device 115 is connected in parallel to ray structure 145, for use as permission forward current in opposite direction The diode of upper flowing.Especially, protection device 115 may be used as high with the operating voltage at least than ray structure 145 The Zener diode of breakdown voltage.
If the first electric current I1 is applied to luminescent device 100, then for ray structure 145, the first electric current I1 It is reverse current, and for protection device 115, the first electric current I1 is forward current, therefore electric current flows only through protector Part 115.
On the contrary, if the second electric current I2 were applied to luminescent device 100, then for ray structure 145, second Electric current I2 is forward current, and for protection device 115, the second electric current I2 is reverse current, and therefore, electric current is flowed only through Ray structure 145, so that luminescent device 100 is luminous.
Meanwhile, if the second electric current I2 is due to excessively electric caused by the overvoltage higher than the breakdown voltage of protection device 115 Stream, then cause starting protection device 115 due to tunneling effect, so that electric current flows through protection device 115.That is, overcurrent stream Overprotection device 115, without flowing through ray structure 145, so as to prevent from damaging ray structure 145.
The breakdown voltage of protection device 115 can be higher than the operating voltage of ray structure 145.For example, protection device 115 Breakdown voltage may be in the range of 3V to 100V, but embodiment not limited to this.The breakdown voltage of protection device 115 can be with Determined by adjusting conductive member 110a and doped portion 112 size and doping concentration.
As described above, protection device 115 can form the top table in ray structure 145 by simply and effectively technique On face, so as to protect luminescent device 100 not influenceed by overcurrent and reverse current, so as to improve luminescent device 100 Reliability.
Hereinafter, it will be described in detail the manufacture method of the luminescent device 100 according to first embodiment.
Fig. 4 to Figure 11 is the sectional view for the manufacture method for showing the luminescent device 100 according to first embodiment.
With reference to Fig. 4, ray structure 145 is formed on silicon substrate 110.Can be by being sequentially deposited on silicon substrate 110 First conductive semiconductor layer 130, the conductive semiconductor layer 150 of active layer 140 and second form ray structure 145.
Silicon substrate 110 can include silicon.Compared with Sapphire Substrate, silicon is not expensive and is easily worked.
MOCVD (metal organic chemical vapor deposition), CVD (chemical vapor deposition), PECVD (plasmas can be passed through Strengthen chemical vapor deposition), MBE (molecular beam epitaxy) or HVPE (hydride gas-phase epitaxy) formation ray structure 145, but It is embodiment not limited to this.
Cushion (not shown) can be formed between the first conductive semiconductor layer 130 and silicon substrate 110, to reduce first The difference and lattice mismatch of thermal coefficient of expansion between conductive semiconductor layer 130 and silicon substrate 110.For example, cushion can pass through Using with InxAlyGa1-x-yThe semi-conducting material of N (0≤x≤1,0≤y≤1,0≤x+y≤1) composition formula and be prepared as list Layer or multilayer.
With reference to Fig. 5, protection component 155 is formed on the periphery of ray structure 145.Protection component 155 can include Material with electrical insulative property.For example, protection component 155 can include from by SiO2、SixOy、Si3N4、SixNy、 SiOxNy、Al2O3、TiO2, ITO, AZO and ZnO composition group in select at least one.Can by such as sputtering or PECVD depositing operation formation protection component 155, but embodiment not limited to this.
With reference to Fig. 6, ohmic contact layer 156 is formed on ray structure 145, and reflecting layer 157 is formed in Ohmic contact On layer 156.Can by such as sputtering, the depositing operation formation ohmic contact layer 156 of PECVD or electron beam evaporation plating and anti- Penetrate layer 157, but embodiment not limited to this.
Ohmic contact layer 156 can include at least one selected from the group being made up of ITO, Ni, Pt, Ir, Rh and Ag. In addition, reflecting layer 157 can include the metal or alloy comprising at least one in Ag, Al, Pt, Pd and Cu.
With reference to Fig. 7, adhesion layer 158 is formed on reflecting layer 157 and protection component 155, and the shape of conductive support member 160 Into on adhesion layer 158.
Adhesion layer 158 can improve the interface adhesive strength between conductive support member 160 and ray structure 145.For example, Adhesion layer 158 can include selecting at least from the group being made up of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag and Ta One.
Conductive support member 160 is prepared as piece, and is bonded on the top surface of adhesion layer 158.Or, conduction branch Support component 160 can be formed by depositing process or depositing operation.In such a case it is possible to omit adhesion layer 158.
Conductive support member 160 can include Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo and partly leading doped with impurity At least one in body substrate.
With reference to Fig. 8, the conductive member 110a of protection device 115 is formed by optionally removing silicon substrate 110.It is preferred that Ground, conductive member 110a formation is in the relatively outer peripheral areas of the basal surface of ray structure 145, but embodiment not limited to this.
In detail, silicon substrate 110 is etched selectively to form the conductive member 110a of protection device 115.Preferably, such as Shown in Fig. 8, conductive member 110a can have polygon post shapes, but embodiment can be not restricted to be used for conductive member 110a manufacturing process and shape.Afterwards, p-type dopant is injected into conductive member 110a, so as to form p-type semiconductor Layer.
Due to silicon substrate 110 can be readily removable by etch process, luminescent device is likely to reduced therefore, it is possible to omit Product yield LLO (laser lift-off) technique, so as to the reliability for the manufacturing process for being modified to luminescent device 100.
Meanwhile, it is capable to using base substrate of the Sapphire Substrate as ray structure 145, to replace silicon substrate.In the feelings Under condition, Sapphire Substrate is optionally removed by LLO techniques, and formed on ray structure 145 by depositing operation Conductive member 110a, but embodiment not limited to this.
With reference to Fig. 9, n-type dopant is by optionally injection conductive member 110a bottom, to form doped portion 112. Doped portion 112 is formed at a part for the bottom in conductive member 110a.
In order to form doped portion 112 in desired position, mask pattern is formed in conductive member 110a, and pass through Ion implanting or thermal diffusion carry out implant n-type dopant along mask pattern, but embodiment not limited to this.
With reference to Figure 10, isolation etching is performed for ray structure 145, and on the basal surface of ray structure 145, that is, exist Pattern or roughness 131 is formed on the basal surface of first conductive semiconductor layer 130 to improve light extraction efficiency.
Light-emitting device chip can be divided into single chip unit by isolating etching.In addition, can by pattern or Person's roughness 131 improves light extraction efficiency.
Passivation layer (not shown) can be formed in ray structure 145 at least one sentence sideways protection ray structure 145. For example, passivation layer includes SiO2、SiOx、SiOxNy、Si3N4Or Al2O3, but embodiment not limited to this.
With reference to Figure 11, first electrode 170 is formed on the basal surface of ray structure 145, and the 3rd electrode 114 is formed in conduction On component 110a basal surface, and second electrode 116 is formed on the basal surface of doped portion 112, so as to provide according to One embodiment includes the luminescent device 100 of protection device 115.
At this moment, first and the 3rd electrode 170 and 114 can be electrically coupled to same outer electrode, and conductive supporting Component 160 and second electrode 116 are electrically coupled to same outer electrode.
Hereinafter, the luminescent device 100B and its manufacture method according to second embodiment be will be described in detail.
Figure 12 is the sectional view of the luminescent device 100B according to second embodiment.According to the luminescent device of second embodiment 100B is similar to the luminescent device 100 according to first embodiment, and difference is the electrode and its operating principle of protection device.
With reference to Figure 12, included according to the luminescent device 100B of second embodiment：Conductive support member 160, in conductive supporting Adhesion layer 158 on component 160, in the outer peripheral areas of the top surface on conductive support member 160 or in adhesion layer 158 Protect component 155, the reflecting layer 157 on adhesion layer 158, the ohmic contact layer 156 on reflecting layer 157, protection component 155 and the ray structure 145 on ohmic contact layer 156, the first electrode 170 on ray structure 145 and in ray structure Protection device 115b on 145.
Ray structure 145 at least includes：First conductive semiconductor layer 130, having below the first conductive semiconductor layer 130 Active layer 140 and the second conductive semiconductor layer 150 below active layer 140.First conductive semiconductor layer 130, active layer 140 and second conductive semiconductor layer 150 constitute produce light structure.
Following description will be carried out based on following hypothesis：That is, the first conductive semiconductor layer 130 includes n-type semiconductor Layer, and the second conductive semiconductor layer 150 includes p-type semiconductor layer, but embodiment not limited to this.
Protection device 115b includes：Conductive member 110a, it is fabricated from a silicon and is doped with n-type dopant；Mix Hetero moiety 112, it forms on conductive member 110a and is doped with p-type dopant；And second electrode 116, it is being mixed On hetero moiety 112.Second electrode 116 and conductive support member 160 are connected to same external power source.
If forward current flows through ray structure 145, then electric current does not flow through protection device 115b, so that protection device 115b does not work.
If reverse current is applied to ray structure 145, then electric current flows through protection device 115b and first conductive half Conductor layer 130, without flowing through ray structure 145, so as to prevent the active layer for damaging ray structure 145.
In addition, if the high excessive forward current of breakdown voltage than protection device 115b is applied to ray structure, So protection device 115b is activated, so that electric current flows through protection device 115b and the first conductive semiconductor layer 130, without flowing Ray structure 145 is crossed, so as to prevent the active layer for damaging ray structure 145.
Hereinafter, the luminescent device 100C and its manufacture method according to 3rd embodiment be will be described in.
Figure 13 is the sectional view of the luminescent device 100C according to 3rd embodiment.According to the luminescent device of 3rd embodiment 100C is similar to the luminescent device 100 according to first embodiment, and its difference is, first electrode, and protection device Doping and operating principle.
With reference to Figure 13, included according to the luminescent device 100C of 3rd embodiment：Conductive support member 160, in conductive supporting Adhesion layer 158 on component 160, in the outer peripheral areas of the top surface on conductive support member 160 or in adhesion layer 158 Protect component 155, the reflecting layer 157 on adhesion layer 158, the ohmic contact layer 156 on reflecting layer 157, protection component 155 and the ray structure 145 on ohmic contact layer 156, the protection device 115c on ray structure 145 and in protector Second on part 115c and the 3rd electrode 116 and 114.
Ray structure 145 at least includes：First conductive semiconductor layer 130, having below the first conductive semiconductor layer 130 Active layer 140 and the second conductive semiconductor layer 150 below active layer 140.First conductive semiconductor layer 130, active layer 140 and second conductive semiconductor layer 150 constitute produce light structure.Following description will be carried out based on following hypothesis： That is, the first conductive semiconductor layer 130 includes n-type semiconductor layer, and the second conductive semiconductor layer 150 includes p-type semiconductor layer, But embodiment not limited to this.
Protection device 115c includes：Conductive member 110a, it is fabricated from a silicon and is doped with n-type dopant；Mix Hetero moiety 112, it forms on conductive member 110a and is doped with p-type dopant；Second electrode 116, it is in doping Divide on 112；And the 3rd electrode 114, it is on conductive member 110a.
Under normal circumstances, i.e. when forward current is applied to luminescent device 100C, the 3rd electrode 114 and conductive branch Support component 160 provides power to ray structure 145.Because protection device 115c conductive member 110a has and first The polarity identical polarity (n-type) of conductive semiconductor layer 130.
If reverse current is applied to luminescent device 100C, then because protection device 115c rectification function causes instead It will not be flowed to electric current.If however, applying excessive reverse current, then protection device 115c is activated, so that reversely electricity Stream flows through protection device 115c, so as to protect luminescent device 100C ray structure 145.
Figure 14 is the sectional view of the luminescent device 100D according to fourth embodiment.According to the luminescent device of fourth embodiment 100D, passivation layer 180 is formed on the side in ray structure 145, to protect ray structure 145 from external impact.
Wherein formed in protection device 115d region, by protecting the partially exposed adhesion layer 158 of component 155.
In detail, the protection component 155 formed in formed therein which protection device 115d region can have than Without the narrow width of protection component 155 that is formed in protection device 115d region is formed with, so that adhesion layer 158 is by portion Divide ground exposure.In addition, second electrode 116 is connected to the expose portion of adhesion layer 158.
Second electrode 116 is formed on the passivation layer 180 adjacent with protection device 115d, and is electrically coupled to attachment Layer 158.In detail, the end thereof contacts doped portion 112 of second electrode 116, and second electrode 116 the other end be connected to it is attached Layer 158.That is, second electrode 116 is connected to adhesion layer 158, and is electrically coupled to conductive support member 160.
With reference to Figure 14, included according to the luminescent device 100D of fourth embodiment：Conductive support member 160, in conductive supporting Adhesion layer 158 on component 160, in the outer peripheral areas of the top surface on conductive support member 160 or in adhesion layer 158 Protect component 155, the reflecting layer 157 on adhesion layer 158, the ohmic contact layer 156 on reflecting layer 157, protection component 155 and the ray structure 145 on ohmic contact layer 156, the protection device 115d on ray structure 145 and in protector Second on part 115d and the 3rd electrode 116 and 114.
Ray structure 145 at least includes：First conductive semiconductor layer 130, having below the first conductive semiconductor layer 130 Active layer 140 and the second conductive semiconductor layer 150 below active layer 140.First conductive semiconductor layer 130, active layer 140 and second conductive semiconductor layer 150 constitute produce light structure.Following description will be carried out based on following hypothesis： That is, the first conductive semiconductor layer 130 includes n-type semiconductor layer, and the second conductive semiconductor layer 150 includes p-type semiconductor layer, But embodiment not limited to this.
Protection device 115d includes：Conductive member 110a, it is fabricated from a silicon and is doped with n-type dopant；Mix Hetero moiety 112, it is formed on conductive member 110a, and is doped with p-type dopant；Second electrode 116, it is in doping Divide on 112；And the 3rd electrode 114, it is on conductive member 110a.
Under normal circumstances, i.e. when forward current is applied to luminescent device 100D, the 3rd electrode 114 and conductive branch Support component 160 provides power to ray structure 145.Because protection device 115d conductive member 110a has and first The polarity identical polarity (n-type) of conductive semiconductor layer 130.
If reverse current is applied to luminescent device 100D, then because protection device 115d rectification function causes instead It will not be flowed to electric current.If however, applying excessive reverse current, then protection device 115d is enabled, so that reversely electricity Stream flows through protection device 115d, thus protects luminescent device 100D ray structure 145.
Figure 15 is the sectional view for showing the light emitting device package including luminescent device according to embodiment.
With reference to Figure 15, light emitting device package includes：Package main body 20；The first and second electricity formed in package main body 20 Pole layer 31 and 32；Luminescent device 100, it is arranged in package main body 20 and is electrically coupled to the first and second electrode layers 31 With 32；And shaped component 40, it surrounds luminescent device 100.
Package main body 20 can include silicon materials, synthetic resin material or metal material.Tilt internal wall can be formed Around luminescent device.
First electrode layer 31 and the second electrode lay 32 are electrically isolated from one another, to provide power to luminescent device 100.Separately Outside, the first and second electrode layers 31 and 32 reflect the light from the generation of luminescent device 100 to improve light efficiency, and will be from photophore The heat produced that part 100 is produced is to outside.
Luminescent device 100 is installed in package main body 20, and is electrically coupled to the He of the first and second electrode layer 31 32.Specifically, luminescent device 100 is installed on one in the first and second electrode layers 31 and 32, and passes through the company of wiring It is connected to another in the first and second electrode layers 31 and 32.The protection device of luminescent device 100 is connected to first by wiring With the second electrode lay 31 and 32.However, embodiment does not limit the electrode connecting structure of luminescent device 100.
Shaped component 40 surrounds luminescent device 100, to protect luminescent device 100.In addition, shaped component 40 can include it is glimmering Luminescent material with change from luminescent device 100 launch light wavelength.
Figure 16 is point for showing the back light unit 1100 for including luminescent device or light emitting device package according to embodiment Solve perspective view.Back light unit 1100 shown in Figure 16 is the example of illuminator, but embodiment not limited to this.
With reference to Figure 16, back light unit 1100 can include：Underframe 1140, the light conducting member in underframe 1140 1120 and the light emitting module 1110 on the basal surface of light conducting member 1120 or at the side of light conducting member 1120. In addition, reflector plate 1130 can be arranged on below light conducting member 1120.
Underframe 1140 can be formed as box form, and there is the top surface of opening to accommodate light conducting member wherein for it 1120th, light emitting module 1110 and reflector plate 1130.In addition, underframe 1140 can include metal material or resin material, but It is embodiment not limited to this.
Light emitting module 1110 can include：Substrate and on substrate it is multiple according to the luminescent device of embodiment seal Dress.Light emitting device package 200 provides the light to light conducting member 1120.
As shown in Figure 16, light emitting module 1110 is arranged at least one inner side of underframe 1140, and light is provided and arrived At least side of light conducting member 1120.
In addition, light emitting module 1110 can be arranged on below underframe 1140, with towards the basal surface of light conducting member 1120 Light is provided.Various changes, but embodiment not limited to this can be carried out to this construction according to the design of back light unit 1100.
Light conducting member 1120 is arranged in underframe 1140.Light conducting member 1120 changes the light launched from light emitting module 1110 For surface light, surface light is guided towards display panel (not shown).
Light conducting member 1120 can include light guide plate.Can be by using the third of such as PMMA (polymethyl methacrylate) Olefin(e) acid base resin, PET (PET), PC (makrolon), COC or PEN (PEN) Resin manufactures light guide plate.
Optical sheet 1150 can be arranged on above light conducting member 1120.
Optical sheet 1150 can include at least one of diffusion sheet, concentration piece, brightness enhancement sheet and flourescent sheet.For example, Optical sheet 1150 has the stacked structure of diffusion sheet, concentration piece, brightness enhancement sheet and flourescent sheet.In this case, expand Discrete piece 1150 makes equably to spread from the light that light emitting module 1110 is launched, so as to be gathered in display surface by light is spread by concentration piece On plate (not shown).The light exported from concentration piece is randomly polarized, and brightness enhancement sheet increases from the light of concentration piece output Degree of polarization.Concentration piece can include level and/or vertical prism sheets.In addition, brightness enhancement sheet can include double brightness enhancement films (dual brightness enhancement film), and flourescent sheet can include the transmittance plate comprising fluorescent material or saturating Penetrate film.
Reflector plate 1130 can be arranged on below light conducting member 1120.Reflector plate 1130 is by through light conducting member 1120 The light output surface of the light of basal surface towards light conducting member 1120 reflects.
Reflector plate 1130 can include such as PET, PC, the resin material with high reflectance of polyvinyl chloride resin, but implement Example not limited to this.
Figure 17 is shown according to the saturating of the lighting unit 1200 for including luminescent device or light emitting device package of embodiment View.Lighting unit 1200 shown in Figure 17 is the example of illuminator, and embodiment not limited to this.
With reference to Figure 17, lighting unit 1200 includes：Housing 1210, the light emitting module 1230 being installed in housing 1210, And come from the connection terminal 1220 of the electric power of external power source with reception in housing 1210.
Preferably, housing 1210 includes the material with excellent heat dissipation characteristics, for example, can include metal material with 1210 Or resin material.
Light emitting module 1230 can include at least one light emitting device package of substrate 300 and installation on the substrate 300 200。
Substrate 300 includes the insulating component for being printed on circuit pattern.For example, substrate 300 includes PCB (printed circuit board (PCB)), MC (metal-cored) PCB, flexible PCB or ceramics PCB.
In addition, substrate 300 can include the material of effectively reflected light.The surface of substrate 300 can be coated with such as white The color of color or silver color, with effectively reflected light.
At least one can be installed on the substrate 300 according to the light emitting device package 200 of embodiment.Each luminescent device envelope At least one LED (light emitting diode) can be included by filling 200.LED can include transmitting with red, green, blueness or white The light of color it is colored led, and transmitting UV (ultraviolet) light UV LED.
The LED of light emitting module 1230 can be combined differently, to provide a variety of colors and brightness.For example, can combine white Light LED, red-light LED and green light LED are to realize high color rendering index (CRI) (CRI).In addition, flourescent sheet can be arranged on from luminous In the path for the light that module 1230 is launched, to change the wavelength for the light launched from light emitting module 1230.If for example, from luminous mould The light that block 1230 is launched has the wavelength band of blue light, then flourescent sheet can include yellow fluorescent material.In this case, from luminous The light that module 1230 is launched passes through flourescent sheet, so that light is observed to white light.
Connection terminal 1220 is electrically coupled to light emitting module 1230, to provide power to light emitting module 1230.With reference to Figure 17, connection terminal 1220 has the shape coupled with external power receptacle screw thread, but embodiment not limited to this.For example, even Connecting terminal 1220 can be prepared as the form for the plug being inserted into external power source, or connection terminal 1220 can pass through cloth Line is connected to external power source.
According to illuminator as described above, light conducting member, expansion are provided with the path for the light launched from light emitting module At least one in discrete piece, concentration piece, brightness enhancement sheet and flourescent sheet, so as to realize desired optical effect.
In this manual, any reference for " one embodiment ", " embodiment ", " exemplary embodiment " etc. is meaned The special characteristic described in conjunction with the embodiments, structure or characteristic to be included at least one embodiment of the invention.In explanation In book, this kind of phrase throughout occurred need not all represent identical embodiment.Describe specific with reference to any embodiment in addition, working as When feature, structure or characteristic, it is believed that the other embodiments in conjunction with the embodiments realize that such feature, structure or characteristic also exist In the range of the understanding of those skilled in the art.
Although describing embodiment with reference to multiple exemplary embodiments of the present invention, it should be appreciated that, this area Technical staff can be designed that many other modifications and implementation by the spirit and scope for the principle for falling into present disclosure Example.More specifically, in present disclosure, accompanying drawing and the scope of the appended claims, the composition portion of theme combination arrangement Variations and modifications in terms of part and/or arrangement are all possible.Change in terms of except building block and/or arrangement and repair Outside changing, for those skilled in the art, replacement is used and also will be apparent.

Claims (13)

1. a kind of luminescent device, including：
Conductive support member；
Ray structure, the ray structure is included in second on the conductive support member on the conductive support member Conductive semiconductor layer, the active layer in second conductive semiconductor layer and first conductive half on the active layer Conductor layer；
Protection device and first electrode, the protection device and the first electrode are in first conductive semiconductor layer；With And
Protection component, the outer part office of top surface of the protection component in the conductive support member,
Wherein, first conductive semiconductor layer includes the second conductive dopant,
Wherein, the protection device includes：Main body, is arranged on the first conductiving doping at the part on the top of the main body Thing, and the 3rd electrode on the body,
Wherein, the protection device includes：Doped portion, the doped portion be arranged at the top of the main body and including Second conductive dopant；And second electrode, the second electrode on the doped portion,
Wherein, the protection component includes the material with electrical insulative property, and the main body of the protection device includes conductive structure Part, and
Wherein, the first conductive dopant of the main body is opposite conduction type compared with first conductive semiconductor layer.
2. luminescent device according to claim 1, wherein, the body normal of the protection device with the protection component It is overlapping.
3. luminescent device according to claim 1 or 2, further comprises：Ohmic contact layer, the ohmic contact layer is in institute State between conductive support member and second conductive semiconductor layer；And
Adhesion layer, the adhesion layer is between the conductive support member and the ohmic contact layer.
4. luminescent device according to claim 3, wherein, the ohmic contact layer is connected to the side of the protection component Face.
5. luminescent device according to claim 3, wherein, at least top of the adhesion layer passes through the protection component quilt Exposure.
6. luminescent device according to claim 3, wherein, the bottom of the ohmic contact layer is set lower than the protection The bottom of component.
7. luminescent device according to claim 3, further comprises between the adhesion layer and the ohmic contact layer Reflecting layer.
8. luminescent device according to claim 5, further comprises passivation layer, the passivation layer is in the ray structure On side,
Wherein, the second electrode extend on the passivation layer and the second electrode be connected to adhesion layer pass through it is described The part that protection component is exposed.
9. luminescent device according to claim 1 or 2, wherein, the protection device includes silicon substrate.
10. luminescent device according to claim 9, wherein, the silicon substrate is arranged on first conductive semiconductor layer Top surface edge part office.
11. luminescent device according to claim 9, wherein, the main body includes silicon substrate, and
Wherein, the silicon substrate is set directly on the marginal portion of the top surface of first conductive semiconductor layer,
Wherein, including the main body of the first conductive dopant is set directly on first conductive-type semiconductor layer.
12. luminescent device according to claim 11, wherein, first conductive semiconductor layer includes n-type semiconductor layer, Second conductive semiconductor layer includes p-type semiconductor layer, and first conductive dopant is p-type dopant, and described the Two conductive dopants are n-type dopants.
13. luminescent device according to claim 1 or 2, wherein, second conductive semiconductor layer is arranged on the conduction On supporting member and the protection component.
CN201410260976.2A 2010-02-18 2011-02-18 Luminescent device, light emitting device package, the manufacture method and illuminator of luminescent device Active CN104112757B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2010-0014438 2010-02-18
KR20100014438A KR100999692B1 (en) 2010-02-18 2010-02-18 Light emitting device, method for fabricating the light emitting device and light emitting device package
CN201110041640.3A CN102194847B (en) 2010-02-18 2011-02-18 Light emitting diode, light emitting diode package, method of manufacturing light emitting diode and lighting system

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201110041640.3A Division CN102194847B (en) 2010-02-18 2011-02-18 Light emitting diode, light emitting diode package, method of manufacturing light emitting diode and lighting system

Publications (2)

Publication Number Publication Date
CN104112757A CN104112757A (en) 2014-10-22
CN104112757B true CN104112757B (en) 2017-10-20

Family

ID=43512597

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201410260976.2A Active CN104112757B (en) 2010-02-18 2011-02-18 Luminescent device, light emitting device package, the manufacture method and illuminator of luminescent device
CN201110041640.3A Active CN102194847B (en) 2010-02-18 2011-02-18 Light emitting diode, light emitting diode package, method of manufacturing light emitting diode and lighting system

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201110041640.3A Active CN102194847B (en) 2010-02-18 2011-02-18 Light emitting diode, light emitting diode package, method of manufacturing light emitting diode and lighting system

Country Status (6)

Country Link
US (2) US8637885B2 (en)
EP (1) EP2362419B1 (en)
JP (2) JP5503572B2 (en)
KR (1) KR100999692B1 (en)
CN (2) CN104112757B (en)
TW (1) TWI460850B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101007137B1 (en) * 2010-03-08 2011-01-10 엘지이노텍 주식회사 Light emitting device, method of fabricating the light emitting device and light emitting device package
US9343641B2 (en) * 2011-08-02 2016-05-17 Manutius Ip, Inc. Non-reactive barrier metal for eutectic bonding process
US8809897B2 (en) 2011-08-31 2014-08-19 Micron Technology, Inc. Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods
US9490239B2 (en) 2011-08-31 2016-11-08 Micron Technology, Inc. Solid state transducers with state detection, and associated systems and methods
JP5139576B1 (en) 2011-12-09 2013-02-06 株式会社東芝 Manufacturing method of semiconductor light emitting device
JP2013123032A (en) * 2012-08-21 2013-06-20 Toshiba Corp Semiconductor light-emitting element manufacturing method
TWI499077B (en) * 2012-12-04 2015-09-01 High Power Opto Inc Semiconductor light-emitting device
KR102070089B1 (en) * 2013-10-23 2020-01-29 삼성전자주식회사 Semiconductor light emitting diode package and lighting device using the same
KR102227769B1 (en) 2014-11-06 2021-03-16 삼성전자주식회사 Semiconductor light emitting diode and semiconductor light emitting diode package using the same
TWI631738B (en) * 2017-07-17 2018-08-01 聯勝光電股份有限公司 Optoelectronic semiconductor device and fabrication method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW535307B (en) * 2002-03-04 2003-06-01 United Epitaxy Co Ltd Package of light emitting diode with protective diode
CN101005110A (en) * 2007-01-12 2007-07-25 中国科学院上海微系统与信息技术研究所 Method for realizing gallium nitride ELD vertical structure using metal bounding process

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4388633A (en) * 1980-09-29 1983-06-14 Hughes Aircraft Company Monolithic transistor coupled electroluminescent diode
JP2597975B2 (en) 1985-03-26 1997-04-09 株式会社東芝 Semiconductor light emitting device and method of manufacturing the same
JPS62299092A (en) 1986-06-18 1987-12-26 Fujitsu Ltd Light emitting diode
JPH06334271A (en) 1993-05-25 1994-12-02 Sony Corp Semiconductor laser
JPH11214747A (en) 1998-01-26 1999-08-06 Matsushita Electron Corp Semiconductor light-emitting device
US6547249B2 (en) 2001-03-29 2003-04-15 Lumileds Lighting U.S., Llc Monolithic series/parallel led arrays formed on highly resistive substrates
KR100586676B1 (en) * 2003-07-30 2006-06-07 에피밸리 주식회사 Semiconductor light emitting device
EP1587151A3 (en) * 2004-04-17 2011-09-28 LG Electronics, Inc. Semiconductor light emitting device and fabrication method thereof
JP2006108204A (en) 2004-10-01 2006-04-20 Renesas Technology Corp Semiconductor module and electronic device
TWI244748B (en) * 2004-10-08 2005-12-01 Epistar Corp A light-emitting device with a protecting structure
JP4019285B2 (en) 2005-02-04 2007-12-12 セイコーエプソン株式会社 Surface emitting device and method for manufacturing the same
KR100593942B1 (en) * 2005-04-30 2006-06-30 삼성전기주식회사 Group iii-nitride light emitting device having esd protecting function
EP1750309A3 (en) 2005-08-03 2009-07-29 Samsung Electro-mechanics Co., Ltd Light emitting device having protection element
JP2007158215A (en) 2005-12-08 2007-06-21 Seiko Epson Corp Optical semiconductor element and method of manufacturing same
KR101235460B1 (en) 2006-02-14 2013-02-20 엘지이노텍 주식회사 Side-View Type Light Emitting Diode and Manufacturing Method thereof
WO2007111432A1 (en) 2006-03-28 2007-10-04 Seoul Opto Device Co., Ltd. Light emitting device having zener diode therein and method of fabricating the same
KR101138947B1 (en) 2006-03-28 2012-04-25 서울옵토디바이스주식회사 Light emitting device having zenor diode therein and method of fabricating the same
KR100730754B1 (en) 2006-03-28 2007-06-21 서울옵토디바이스주식회사 Light emitting device having zenor diode therein and method of fabricating the same
KR20070106237A (en) 2006-04-28 2007-11-01 주식회사 에피밸리 Iii-nitride semiconductor light emitting device
US7781241B2 (en) 2006-11-30 2010-08-24 Toyoda Gosei Co., Ltd. Group III-V semiconductor device and method for producing the same
KR20080089859A (en) * 2007-04-02 2008-10-08 엘지이노텍 주식회사 Nitride semiconductor light emitting device and manufacturing method thereof
US7759670B2 (en) 2007-06-12 2010-07-20 SemiLEDs Optoelectronics Co., Ltd. Vertical LED with current guiding structure
KR100872717B1 (en) * 2007-06-22 2008-12-05 엘지이노텍 주식회사 Light emitting device and manufacturing method thereof
KR20090022701A (en) 2007-08-31 2009-03-04 엘지이노텍 주식회사 Semiconductor light emitting device and fabrication method thereof
TW200929595A (en) 2007-12-25 2009-07-01 Advanced Optoelectronic Tech Packaging structure of electro-optic device with ESD protection
US20100006864A1 (en) * 2008-07-11 2010-01-14 Philips Lumileds Lighting Company, Llc Implanted connectors in led submount for pec etching bias
JP5334158B2 (en) 2008-07-15 2013-11-06 シャープ株式会社 Nitride semiconductor light emitting device and method for manufacturing nitride semiconductor light emitting device
KR101428085B1 (en) * 2008-07-24 2014-08-07 엘지이노텍 주식회사 Semiconductor light emitting device and fabrication method thereof
KR100995795B1 (en) 2008-08-11 2010-11-22 주식회사 세미콘라이트 Nitride light emitting device
JP5195452B2 (en) * 2009-01-22 2013-05-08 ソニー株式会社 Light emitting element
KR100974776B1 (en) * 2009-02-10 2010-08-06 엘지이노텍 주식회사 Light emitting device
KR20100094246A (en) * 2009-02-18 2010-08-26 엘지이노텍 주식회사 Light emitting device package and method for fabricating the same
KR100969126B1 (en) * 2009-03-10 2010-07-09 엘지이노텍 주식회사 Light emitting device
CN101540361B (en) 2009-04-29 2012-05-09 山东华光光电子有限公司 Preparation method of AlGaInP LED grown on silicon base

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW535307B (en) * 2002-03-04 2003-06-01 United Epitaxy Co Ltd Package of light emitting diode with protective diode
CN101005110A (en) * 2007-01-12 2007-07-25 中国科学院上海微系统与信息技术研究所 Method for realizing gallium nitride ELD vertical structure using metal bounding process

Also Published As

Publication number Publication date
JP5503572B2 (en) 2014-05-28
CN102194847B (en) 2014-07-23
JP5736479B2 (en) 2015-06-17
TWI460850B (en) 2014-11-11
JP2011171741A (en) 2011-09-01
CN104112757A (en) 2014-10-22
US20140124825A1 (en) 2014-05-08
JP2014112731A (en) 2014-06-19
US9287465B2 (en) 2016-03-15
EP2362419A3 (en) 2015-12-30
TW201145617A (en) 2011-12-16
KR100999692B1 (en) 2010-12-08
EP2362419A2 (en) 2011-08-31
US20110198621A1 (en) 2011-08-18
US8637885B2 (en) 2014-01-28
CN102194847A (en) 2011-09-21
EP2362419B1 (en) 2019-06-12

Similar Documents

Publication Publication Date Title
CN104112757B (en) Luminescent device, light emitting device package, the manufacture method and illuminator of luminescent device
EP2942823B1 (en) Light emitting device, light emitting package, and lighting system
US8450762B2 (en) Light emitting device
JP6199948B2 (en) Light emitting device, light emitting device package
CN102347414B (en) Luminescent device
US8916891B2 (en) Light emitting device, light emitting device package, method of manufacturing light emitting device, and lighting system
CN105679908B (en) Luminescent device
CN105390582B (en) Luminescent device, the method and light emitting device package for manufacturing luminescent device
CN102122692A (en) Light emitting device, method of manufacturing the same, light emitting device package, and lighting system
EP2315267A1 (en) Light emitting device, light emitting device package and lighting system
JP2011129922A (en) Light emitting element, light emitting element manufacturing method, light emitting element package, and lighting system
CN102148307A (en) Light emitting device
CN102201513A (en) Light emitting diode, method of manufacturing the same, light emitting diode package and lighting system including the same
EP2372792B1 (en) Light emitting device, method for fabricating light emittng device, and light emitting device package
KR101746002B1 (en) Light emitting device
CN105474414A (en) Light emitting device
KR101662239B1 (en) A light emitting device, a method of fabricating the light emitting device, and a light emitting device package
KR20120087035A (en) Light emitting device and light emitting device package
US8692278B2 (en) Light emitting device
KR101693869B1 (en) Light emitting device, method for fabricating the light emitting device, light emitting device package and lighting system

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20210818

Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Leyu Semiconductor Co.,Ltd.

Address before: Seoul, South Kerean

Patentee before: LG INNOTEK Co.,Ltd.