CN113451454B - P-type semiconductor layer growth method, LED epitaxial layer and chip - Google Patents

P-type semiconductor layer growth method, LED epitaxial layer and chip Download PDF

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CN113451454B
CN113451454B CN202010982471.2A CN202010982471A CN113451454B CN 113451454 B CN113451454 B CN 113451454B CN 202010982471 A CN202010982471 A CN 202010982471A CN 113451454 B CN113451454 B CN 113451454B
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layer
growing
algan
type semiconductor
growth mode
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CN113451454A (en
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翟小林
杨顺贵
林雅雯
黄国栋
黄嘉宏
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Chongqing Kangjia Optoelectronic Technology Co ltd
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Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

The invention relates to a growth method of a P-type semiconductor layer, an LED epitaxial layer and a chip. When the P-type semiconductor layer grows, the lower partial layer and the upper partial layer grow in a two-dimensional growth mode, the middle partial layer grows in a three-dimensional growth mode, and a layer structure grown in the two-dimensional growth mode has good crystal quality and interface quality, so that the upper partial layer and the lower partial layer not only protect the middle partial layer, but also ensure the integral interface quality of the P-type semiconductor layer. The middle part layer has higher hole concentration, a rough surface and different refractive indexes with the upper part layer and the lower part layer, the current expansion effect is improved, the total area of the light-emitting surface of the LED epitaxial layer is increased, more opportunities are provided for photons to be emitted from the surface of the device, and the light extraction efficiency is improved. In addition, the rough surface can also reduce internal reflection, so that more light can be extracted, the light extraction efficiency is further increased, and the external quantum efficiency of the LED chip is improved.

Description

P-type semiconductor layer growth method, LED epitaxial layer and chip
Technical Field
The invention relates to the technical field of Light Emitting Diodes (LEDs), in particular to a method for growing a P-type semiconductor layer, an LED epitaxial layer and a chip.
Background
GaN (gallium nitride) -based LEDs have been commercially produced, but research into GaN materials and LEDs is still ongoing, with the emphasis on improving the quality of GaN materials and quantum efficiency of LED chips to improve device performance. The brightness of the LED chip is directly related to the external quantum efficiency of the LED chip, but the external quantum efficiency of the LED chip is still low at present, which seriously affects the light emitting effect of the LED chip and restricts the development of the display technology.
Therefore, how to improve the external quantum efficiency of the LED chip and improve the light emitting effect thereof is a problem to be solved urgently.
Disclosure of Invention
In view of the above deficiencies of the related art, an object of the present application is to provide a method for growing a P-type semiconductor layer, an LED epitaxial layer and a chip, which aim to solve the problems of low external quantum efficiency and poor light extraction effect of the LED chip in the related art.
A growth method of a P-type semiconductor layer, the P-type semiconductor layer comprises a lower part layer, a middle part layer and an upper part layer, the growth method of the P-type semiconductor layer comprises the following steps:
growing the lower partial layer in a two-dimensional growth mode;
growing the middle part layer in a three-dimensional growth mode;
growing the upper part layer in a two-dimensional growth mode;
wherein, the contact surface of the middle part layer and the upper part layer is a rough surface with a concave-convex structure.
In the above method for growing a P-type semiconductor layer, when the P-type semiconductor layer is grown, the lower partial layer and the upper partial layer of the P-type semiconductor layer are grown in a two-dimensional growth mode, and the middle partial layer of the P-type semiconductor layer is grown in a three-dimensional growth mode, so that the middle partial layer grown in the three-dimensional growth mode in the P-type semiconductor layer is sandwiched between the upper partial layer and the lower partial layer grown in the two-dimensional growth mode. The layer structure grown in the two-dimensional growth mode has good crystal quality and interface quality, so that the integral interface quality of the P-type semiconductor layer is ensured through the upper part layering and the lower part layering; meanwhile, the upper part layer and the lower part layer also form good protection for the middle part layer. The middle part of the layers grows in a three-dimensional growth mode, so that the LED epitaxial layer has high hole concentration, a rough surface and refractive indexes different from those of the upper part of the layers and the lower part of the layers, the high hole concentration is favorable for current expansion, the rough surface increases the total area of the light-emitting surface of the LED epitaxial layer, and the refractive indexes different from those of the upper part of the layers and the lower part of the layers can provide more opportunities for photons to be emitted from the surface of the device, so that the light extraction efficiency is improved. In addition, the rough surface can also reduce internal reflection, so that more light can be extracted, the light extraction efficiency is further increased, and the external quantum efficiency of the LED chip is improved.
Optionally, the manner of growing in the three-dimensional growth mode includes at least one of:
growing with nitrogen as carrier gas;
growing at a first temperature;
the manner of growing in the two-dimensional growth mode includes at least one of the following two:
growing with hydrogen as carrier gas;
the growth is carried out at a second temperature, the second temperature being higher than the first temperature.
In the growth method of the P-type semiconductor layer, two modes for realizing a two-dimensional growth mode and two modes for realizing a three-dimensional growth mode are provided, so that the light extraction efficiency is increased, and the external quantum efficiency of the LED chip is improved.
Optionally, growing the lower partial layer in a two-dimensional growth mode comprises:
growing a first AlGaN (aluminum gallium nitrogen) layer without Mg (magnesium) doping on the lower part in a two-dimensional growth mode;
growing a lower first MgN (magnesium nitride) layer doped with In (indium) In a two-dimensional growth mode;
and growing a lower second AlGaN layer doped with Mg and In simultaneously In a two-dimensional growth mode.
Optionally, growing the intermediate portion of the layer in a three-dimensional growth mode comprises:
cyclically and alternately growing a first AlGaN layer at the middle part without Mg doping and a first MgN layer at the middle part with In doping In a three-dimensional growth mode, wherein the cycle number is more than 2;
and growing a middle second AlGaN layer doped with Mg and In simultaneously In a three-dimensional growth mode.
Optionally, growing the upper part-layer in a two-dimensional growth mode comprises:
growing an upper first AlGaN layer without Mg doping in a two-dimensional growth mode;
growing an In-doped upper first MgN layer In a two-dimensional growth mode;
and growing an upper second AlGaN layer doped with Mg and In simultaneously In a two-dimensional growth mode.
Based on the same inventive concept, the application also provides an LED epitaxial layer, which sequentially comprises from bottom to top:
an N-type semiconductor layer;
a quantum well layer; and
a P-type semiconductor layer;
the P-type semiconductor layer comprises a lower part layer, a middle part layer and an upper part layer, wherein the lower part layer and the upper part layer are two-dimensional mode layers, the middle part layer is a three-dimensional mode layer, and a contact surface of the middle part layer and the upper part layer is a rough surface with a concave-convex structure.
The P-type semiconductor layer of the LED epitaxial layer comprises a lower part layer, a middle part layer and an upper part layer, wherein the lower part layer and the upper part layer are two-dimensional mode layers, and the middle part layer is a three-dimensional mode layer. The lower part layer and the upper part layer sandwich the three-dimensional mode layer of the middle part layer, so that good protection is provided for the middle part layer, and the two-dimensional mode layer has good crystal quality and interface quality, so that the interface quality of the whole P-type semiconductor layer is ensured through the upper part layer and the lower part layer. The middle part layer of the three-dimensional growth mode has higher hole concentration, a rough surface and refractive indexes different from those of the upper part layer and the lower part layer, the high hole concentration is favorable for current expansion, the rough surface increases the total area of the light-emitting surface of the LED epitaxial layer, and the refractive indexes different from those of the upper part layer and the lower part layer can provide more opportunities for photons to be emitted from the surface of the device, so that the light extraction efficiency is increased. In addition, internal reflection can be reduced due to the fact that the surface of the middle part of the layer is rough, more light can be extracted, light extraction efficiency is further improved, and external quantum efficiency of the LED chip is improved.
Optionally, the lower part layer comprises, from bottom to top:
a lower first AlGaN layer without Mg doping;
an In-doped lower first MgN layer;
and a lower second AlGaN layer doped with Mg and In at the same time.
Optionally, the middle layer sequentially includes from bottom to top:
at least two times of circularly alternating Mg-doped middle first AlGaN layers and In-doped middle first MgN layers;
and the middle second AlGaN layer is doped with Mg and In at the same time.
Optionally, the upper layer sequentially comprises from bottom to top:
an upper first AlGaN layer free of Mg doping;
an In-doped upper first MgN layer;
and an upper second AlGaN layer doped with Mg and In at the same time.
Based on the same inventive concept, the application also provides an LED chip, wherein the LED chip comprises the LED epitaxial layer.
The P-type semiconductor layer of the LED chip comprises a lower part layer, a middle part layer and an upper part layer, wherein the lower part layer and the upper part layer are two-dimensional mode layers, and the middle part layer is a three-dimensional mode layer. The lower part layer and the upper part layer sandwich the three-dimensional mode layer of the middle part layer, so that good protection is provided for the middle part layer, and the two-dimensional mode layer has good crystal quality and interface quality, so that the interface quality of the whole P-type semiconductor layer is ensured through the upper part layer and the lower part layer. The middle part layer of the three-dimensional growth mode has higher hole concentration, a rough surface and refractive indexes different from those of the upper part layer and the lower part layer, the high hole concentration is favorable for current expansion, the rough surface increases the total area of the light-emitting surface of the LED epitaxial layer, and the refractive indexes different from those of the upper part layer and the lower part layer can provide more opportunities for photons to be emitted from the surface of the device, so that the light extraction efficiency is increased. In addition, internal reflection can also be reduced due to the fact that the surface of the middle layer is rough, more light can be extracted, light extraction efficiency is further improved, external quantum efficiency of the LED chip is improved, and the light emitting effect of the LED chip is enhanced.
Based on the same inventive concept, the application also provides electronic equipment, and the electronic equipment comprises a plurality of LED chips.
The LED chip arranged in the electronic equipment has excellent light extraction efficiency, the external quantum efficiency of the LED chip is guaranteed, the light emitting effect is good, and therefore the display effect of the electronic equipment is improved.
Drawings
Fig. 1 is a schematic structural diagram of a P-type semiconductor layer provided in an alternative embodiment of the present invention;
FIG. 2 is a flow chart of a method for growing a P-type semiconductor layer according to an alternative embodiment of the present invention;
FIG. 3 is a schematic diagram of a structure of a lower portion of a P-type semiconductor layer provided in an alternative embodiment of the present invention;
FIG. 4 is a schematic diagram of a structure of a lower-middle layer within a P-type semiconductor layer provided in an alternative embodiment of the present invention;
FIG. 5 is a schematic diagram of a structure of an upper portion of a P-type semiconductor layer provided in an alternative embodiment of the present invention;
fig. 6 is a schematic structural diagram of an epitaxial layer of an LED provided in an alternative embodiment of the present invention;
FIG. 7 is a schematic diagram of an LED chip according to an alternative embodiment of the present invention;
fig. 8 is a schematic view of a structure of an epitaxial layer of an LED disposed on a sapphire substrate in accordance with another alternative embodiment of the present invention;
FIG. 9 is a schematic view of the P-type semiconductor layer structure of FIG. 8;
fig. 10 is a flowchart of a method for growing a P-type semiconductor layer according to another alternative embodiment of the present invention;
fig. 11 is a flowchart of a method for growing a P-type semiconductor layer according to yet another alternative embodiment of the present invention.
Description of reference numerals:
a 10-P type semiconductor layer; 11-a lower partial layer; 12-a middle portion layer; 13-upper part layering; 111-a lower first AlGaN layer; 112-lower first MgN layer; 113-a lower second AlGaN layer; 121-a middle first AlGaN layer; 122-first MgN layer in the middle; 123-a middle second AlGaN layer; 131-an upper first AlGaN layer; 132 — upper first MgN layer; 133 — upper second AlGaN layer; 60-LED epitaxial layer 60; 61-comprising an N-type semiconductor layer; 62-a quantum well layer; a 63-P type semiconductor layer; 7-LED chip; 70-an electrode; 80-LED epitaxial layers; 80 a-a sapphire substrate; 81-AlN buffer layer; 82-3D coarsening layer; 83-U type GaN layer; an 84-N type AlGaN (aluminum gallium nitride) layer; 85-N type GaN layer; 86-quantum well layer; 87-an electron blocking layer; 88-P type GaN layer; 881-lower part layer 881; 882-middle part layer; 883-upper part layering; 881 a-a lower first AlGaN layer; 881 b-the first lower MgN layer; 881 c-a lower second AlGaN layer; 882 a-middle first AlGaN layer; 882 b-growing a middle first MgN layer; 882 c-middle second AlGaN layer; 883a — an upper first AlGaN layer; 883b — the first upper MgN layer; 883c — upper second AlGaN layer.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present application are given in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
The luminance of the LED chip is directly related to its external quantum efficiency, which is equal to the product of the internal quantum efficiency and the light extraction efficiency, so the external quantum efficiency depends on the internal quantum efficiency and the light extraction efficiency of the active layer.
Currently, the external quantum efficiency of LED chips is still low, mainly due to the high refractive index of GaN material, about 2.5, and the refractive index of air being 1. According to the law of light refraction, the critical angle is about 23.5 °, which causes most of the light emitted from the active layer not to exit into the air, but to undergo multiple internal reflections until being absorbed by the LED chip, affecting the light extraction efficiency of the LED chip. This has not only restricted the promotion of the outer quantum efficiency of LED chip, simultaneously, because the LED chip has absorbed the light that fails to be emergent, has aggravated the heat dissipation problem of device, and then has further influenced the outer quantum efficiency of LED chip.
Based on this, the present application intends to provide a solution to the above technical problem, the details of which will be explained in the following embodiments.
An alternative embodiment:
the present embodiment provides a method for growing a P-type semiconductor layer and an LED epitaxial layer based on the method, where the method is used to prepare the P-type semiconductor layer in the LED epitaxial layer, please refer to a schematic structural diagram of the P-type semiconductor layer shown in fig. 1:
the P-type semiconductor layer 10 includes a lower sub-layer 11, a middle sub-layer 12, and an upper sub-layer 13 in sequence from bottom to top, where the lower sub-layer 11 and the upper sub-layer 13 are two-dimensional mode layers, that is, layers with normal two-dimensional growth mode, and the middle sub-layer 13 is a three-dimensional mode layer, that is, a layer structure grown in three-dimensional growth mode. The lower sublayer 11 and the upper sublayer 13 sandwich the middle sublayer 12. As can be seen from fig. 1, the surface of the lower part layer 11 and the upper part layer 13 grown in the two-dimensional growth mode is smoother, while the surface of the middle part layer 12 is rougher. The contact surface of the middle part layer 12 and the upper part layer 13 is a rough surface having a textured structure due to the growth in the three-dimensional growth mode. Because the middle part layer 12 is provided with the concave-convex structure, the concave-convex structure can reduce the possibility that light is limited in the epitaxial layer due to total reflection, the light extraction efficiency of the epitaxial layer is improved, and the display effect of the LED chip is favorably improved. It should be understood that although the concave-convex structure on the surface of the middle portion layer 12 is shown as saw-toothed in fig. 1, this is an illustration showing that the surface of the middle portion layer 12 is rough and has a concave-convex structure, which is merely an illustration showing that the surface of the middle portion layer 12 has opposite protrusions and depressions, and does not mean that the longitudinal section of the protrusions on the surface of the middle portion layer 12 is necessarily triangular in actual practice.
The following describes a process for preparing a P-type semiconductor layer with reference to a flow chart of a P-type semiconductor layer growth method shown in fig. 2:
s202: the lower partial layer is grown in a two-dimensional growth mode.
In some examples of the present embodiment, the lower part layer 11 is a whole, and the material and the growth environment of each part are the same. In other examples of this embodiment, however, the lower sublayer 11 comprises at least two sublayers. In some scenarios, the sub-layers of the lower sub-layer 11 are made of the same material, but the growth environment is different, for example, the growth pressure is slightly different. In other scenarios, the growth environment of each sub-layer of the lower portion layer 11 is the same, but the material is not completely the same, for example, in some examples, the main material of each sub-layer of the lower portion layer 11 is the same, but there is some difference between the doping sources, or the doping concentrations are different. In some examples, the sub-layers of the lower sub-layer 11 are made of different materials. For example, in some examples of the present embodiment, the lower portion layer 11 may include three sublayers, and as shown in fig. 3, the lower portion layer includes, from bottom to top, a lower first AlGaN layer 111, a lower first MgN layer 112, and a lower second AlGaN layer 113.
The lower first AlGaN layer 111 may be an AlGaN layer without Mg doping, the lower first MgN layer 112 may be an MgN layer with In doping, and the lower second AlGaN layer 113 may be an AlGaN layer with Mg and In doping.
In some examples of this embodiment, when In is doped In any one of the sub-layers of the lower partial layer 11, the doping concentration of In is greater than 5E +18atom/cm 3 It is understood that 5E +18atom/cm 3 It is actually 5 × 10 18 atom/cm 3 E.g., aE + batom/cm 3 Is actually a x 10 b atom/cm 3 . In one example, the doping concentration of In the lower first MgN layer 112 is 5E +20atom/cm 3 And the doping concentration of In the lower second AlGaN layer 113 is 6E +18atom/cm 3 。
In some examples of the present embodiment, the doping concentration of Mg in the lower second AlGaN layer 113 is greater than 1E+19atom/cm 3 . For example, in one example, the doping concentration of Mg is 2E +19atom/cm 3 。
In some examples, the thickness of the lower first AlGaN layer 111 is in the range of 5nm to 30nm, for example, in one example of the present embodiment, the thickness of the lower first AlGaN layer 111 may be 14nm, however, it will be understood by those skilled in the art that the thickness of the lower first AlGaN layer 111 may be other values, such as any one of 5nm, 9nm, 11.3nm, 17nm, 22nm, 30nm, etc., or other values than those illustrated.
In some examples, the thickness of the lower second AlGaN layer 113 may be between 10nm and 40nm, for example, 10nm, 20nm, 25nm, 30nm, 35nm, 37nm, or 40 nm.
Alternatively, the thickness of the lower first MgN layer 112 may be in the same range as the thickness of the lower first AlGaN layer 111, for example, the thickness may also be in the range of 5nm to 30nm, although it is understood that the same range does not mean that the thicknesses are equal, for example, in one example, the thickness of the lower first MgN layer 112 is 22nm and the thickness of the lower first AlGaN layer 111 is 10 nm.
In this embodiment, when the lower partial layer 11 is grown, a two-dimensional growth mode is adopted to grow so as to obtain the longer lower partial layer 11 with a smoother surface. When the lower partial layer 11 is grown, the lower first AlGaN layer 111 may be grown in the two-dimensional growth mode, then the lower first MgN layer 112 may be grown in the two-dimensional growth mode, so that the lower first MgN layer 112 covers the lower first AlGaN layer 111, and then the lower second AlGaN layer 113 may be grown in the two-dimensional growth mode, where the lower first AlGaN layer 112 is sandwiched between the lower first AlGaN layer 111 and the lower second AlGaN layer 113.
S204: the middle portion of the layer is grown in a three-dimensional growth mode.
The middle part layer 12 may be an integral body, or may be divided into two or more sub-layers from bottom to top. The sublayers differ in at least one aspect of growth environment, material, and the like. For example, in an example of the present embodiment, the middle portion layer 12 includes a middle first AlGaN layer 121 and a middle first MgN layer 122 that are cyclically and alternately grown a plurality of times, and as shown in fig. 4, the cyclic alternation times of the middle first AlGaN layer 121 and the middle first MgN layer 122 are equal to or greater than 2. In addition to the middle first AlGaN layer 121 and the middle first MgN layer 122, the middle layer 12 further includes a middle second AlGaN layer 123, and the middle second AlGaN layer 123 is grown after the cyclic alternating growth of the middle first AlGaN layer 121 and the middle first MgN layer 122 is completed, and thus, is located on the upper portion of the middle layer 12.
In the present embodiment, the middle first AlGaN layer 121 includes an AlGaN layer without Mg doping, and the middle first MgN layer 122 includes a MgN layer containing In doping. The middle second AlGaN layer 123 comprises an AlGaN layer containing both Mg and In doping.
In some examples of this embodiment, when In is doped In any one of the sub-layers of the middle portion layer 12, the doping concentration of In is greater than 5E +18atom/cm 3 For example, In one example, the doping concentration of In the middle first MgN layer 122 is 5E +19atom/cm 3 And the doping concentration of In the middle second AlGaN layer 113 is 6E +18atom/cm 3 . When Mg is doped in any sub-layer of the middle part layer 12, the doping concentration of Mg is more than 1E +19atom/cm 3 . For example, in one example, the doping concentration of Mg in the central second AlGaN layer 123 is 2E +19atom/cm 3 。
In some examples of the embodiment, the thickness of the middle first AlGaN layer 121 is between 5nm and 25nm, for example, the thickness of the middle first AlGaN layer 121 is 10nm in one example, the thickness of the grown middle first AlGaN layer 121 is 13nm in another example, and the value of the middle first AlGaN layer 121 may be 5nm, 25nm, 15nm or 22nm in still other examples.
The thickness of the central first MgN layer 122 may also be between 5-25nm, and may be, for example, 5nm, 7nm, 13nm, 22nm, 24nm, or 25 nm.
Alternatively, the thickness of the middle second AlGaN layer 123 may have a value of 12nm, 25nm, 15nm, or any value between 10 to 40nm such as 22nm, 31nm, 35nm, 40nm, or the like.
In this embodiment, each sub-layer of the middle part layer 12 grows In a three-dimensional growth mode, for example, the middle first AlGaN layer 121 and the middle first MgN layer 122 grow cyclically and alternately In the three-dimensional growth mode for at least two cycles, and then the middle second AlGaN layer 132 doped with Mg and In simultaneously grows In the three-dimensional growth mode.
S206: the upper part-layer is grown in a two-dimensional growth mode.
Similarly, the upper layer 13 may be a whole, and the material and the growth environment of each portion are the same, but in some other examples of the embodiment, the upper layer 13 may also include at least two sub-layers, and each sub-layer has a difference in at least one of the material and the growth environment. For example, in some examples, the main materials of the sub-layers of the upper part layer 13 are the same, but the growth temperature and the growth pressure are different; in other examples, the main material and growth environment of each sublayer of the upper layer 13 are different; in some examples, the growth environment of the sub-layers of the upper layer 13 is the same, but the material is not exactly the same. For example, in fig. 5, the upper layer 13 includes, in order from bottom to top, an upper first AlGaN layer 131, an upper first MgN layer 132, and an upper second AlGaN layer 133.
Alternatively, the upper first AlGaN layer 131 may be an AlGaN layer without Mg doping, the upper first MgN layer 132 may be an MgN layer with In doping, and the upper second AlGaN layer 133 may be an AlGaN layer with both Mg and In doping.
In some examples of the embodiment, when In is doped In any one of the sub-layers of the upper partial layer 13, the doping concentration of In is greater than 5E +18atom/cm 3 When any sub-layer in the upper partial layer 13 is doped with Mg, the doping concentration of Mg is more than 1E +19atom/cm 3 . For example, In one example, the doping concentration of In the middle first MgN layer 132 is 5E +21atom/cm 3 And the doping concentration of In the upper second AlGaN layer 133 was 6E +19atom/cm 3 . The doping concentration of Mg in the upper second AlGaN layer 133 was 2E +20atom/cm 3 。
In some examples, the thickness of the upper first AlGaN layer 131 is in the range of 5nm to 30nm, for example, in one example of the present embodiment, the thickness of the upper first AlGaN layer 131 may be 14nm, however, it will be understood by those skilled in the art that the thickness of the upper first AlGaN layer 131 may be other values, such as any one of 5nm, 9nm, 13.3nm, 17nm, 22nm, 30nm, etc., or other values than those illustrated.
In some examples, the thickness of the upper second AlGaN layer 133 may be between 10nm and 40nm, for example, 10nm, 20nm, 25nm, 30nm, 35nm, 37nm, or 40 nm.
Alternatively, the upper first MgN layer 132 may have a thickness in the same range as the upper first AlGaN layer 131, for example, a thickness in the range of 5-30nm, although it is understood that the same range does not mean that the two layers are necessarily equal in thickness, for example, in one example, the upper first MgN layer 132 is 22nm thick and the upper first AlGaN layer 131 is 10nm thick.
In this embodiment, when the upper part layer 13 is grown, a two-dimensional growth mode is used to grow the upper part layer 13 so as to obtain a long upper part layer 13 having a smooth surface. When the upper part layer 13 is grown, the upper first AlGaN layer 131 may be grown in the two-dimensional growth mode, then the upper first MgN layer 132 may be grown in the two-dimensional growth mode so that the upper first MgN layer 132 covers the upper first AlGaN layer 131, and then the upper second AlGaN layer 133 may be grown in the two-dimensional growth mode, where the upper first MgN layer 132 is sandwiched by the upper first AlGaN layer 131 and the upper second AlGaN layer 133.
In some examples of the present embodiment, the two-dimensional growth mode and the three-dimensional growth mode may be separately realized by different growth temperatures and/or different growth atmospheres.
For example, in some examples, the two-dimensional growth mode in which hydrogen is used as a growth carrier gas is different from the three-dimensional growth mode only in which the reaction chamber is under a hydrogen atmosphere when growing the lower partial layer 11, for example, and the other growth environments are the same. In the three-dimensional growth mode, nitrogen is used as a carrier gas, and the reaction chamber is in a nitrogen atmosphere when the middle part layer 12 is grown. In some other examples, the two-dimensional growth mode differs from the three-dimensional growth mode only by a growth temperature, the growth temperature corresponding to the two-dimensional growth mode being higher than the growth temperature of the three-dimensional growth mode. Alternatively, the growth temperature corresponding to the three-dimensional growth mode may be set at a first temperature, and the growth temperature corresponding to the two-dimensional growth mode may be set at a second temperature, where the second temperature is higher than the first temperature.
In some examples of this embodiment, the first temperature may range from 800 ℃ to 950 ℃, and correspondingly, the second temperature is greater than 950 ℃. For example, in one example, the growth temperature of the lower part layer 11 corresponds to that of the upper part layer 13 being greater than 1000 ℃, while the growth temperature of the middle part layer is between 850 ℃ and 900 ℃.
In some examples, the growth temperature and the growth atmosphere of the two-dimensional growth mode are different from those of the three-dimensional growth mode, for example, the carrier gas is hydrogen in the two-dimensional growth mode, and the corresponding growth temperature is the second temperature. And the carrier gas in the three-dimensional growth mode is nitrogen, and the growth temperature is the first temperature.
It is understood that the present embodiment requires the lower partial layer and the upper partial layer to be grown in the two-dimensional growth mode, and the middle partial layer is grown in the three-dimensional growth mode in order to make the surface of the middle partial layer rougher than the surface of the upper partial layer and the lower partial layer. Therefore, as long as it can be ensured that the surface of the middle part layer is rougher than the surfaces of the upper part layer and the lower part layer, no particular limitation is imposed on the specific growth environment, so in other examples, the growth temperature and growth atmosphere of the upper part layer 13 and the middle part layer 12 may be the same, but there is a difference in other environmental factors that can affect the surface roughness of the grown crystal, which can also ensure that the surface of the middle part layer 12 is rougher than the surface of the upper part layer 13.
It should be understood that, since the growth of the P-type semiconductor layer proceeds from bottom to top, the roughness of the interface or contact surface between the lower partial layer 11 and the middle partial layer is mainly determined by the growth mode of the lower partial layer 11, and the roughness of the interface or contact surface between the middle partial layer 12 and the upper partial layer 13 is mainly determined by the growth mode of the middle partial layer 12. The middle part layer 12 is grown in a three-dimensional mode, but the lower part layer 11 is grown in a two-dimensional mode, so that the roughness of the contact surface between the middle part layer 12 and the lower part layer 112 is smaller than that of the contact surface between the middle part layer 12 and the upper part layer 13, in other words, the contact surface between the middle part layer 12 and the upper part layer 13 is rougher than that between the middle part layer 12 and the lower part layer 11.
Referring to fig. 6, the LED epitaxial layer 60 sequentially includes an N-type semiconductor layer 61, a quantum well layer 62, and a P-type semiconductor layer 63 from bottom to top, wherein the P-type semiconductor layer 63 includes a lower part layer, a middle part layer, and an upper part layer from bottom to top, wherein the lower part layer and the upper part layer are two-dimensional mode layers with a smooth surface, and the middle part layer is a three-dimensional mode layer with a rough surface. The P-type semiconductor layer 63 may be the P-type semiconductor layer 10, and the details of the structure thereof are not described herein.
It is understood that the LED epitaxial layer 60 may further include a buffer layer, an electron blocking layer, etc. in addition to the N-type semiconductor layer 61, the quantum well layer 62, and the P-type semiconductor layer 63.
In the LED epitaxial layer and the method for growing the P-type semiconductor layer in the LED epitaxial layer provided in this embodiment, the P-type semiconductor layer is divided into a lower part layer, a middle part layer and an upper part layer, where the lower part layer and the upper part layer are both two-dimensional mode layers, and the middle part layer is a three-dimensional mode layer. The lower part layer and the upper part layer sandwich the three-dimensional mode layer of the middle part layer, so that good protection is provided for the middle part layer, and the two-dimensional mode layer has good crystal quality and interface quality, so that the interface quality of the whole P-type semiconductor layer is ensured through the upper part layer and the lower part layer. The middle part layer of the three-dimensional growth mode has higher hole concentration, a rough surface and refractive indexes different from those of the upper part layer and the lower part layer, the high hole concentration is favorable for current expansion, the rough surface increases the total area of the light-emitting surface of the LED epitaxial layer, and the refractive indexes different from those of the upper part layer and the lower part layer can provide more opportunities for photons to be emitted from the surface of the device, so that the light extraction efficiency is increased. In addition, the roughness of the surface of the part of the layer can reduce the internal reflection, so that more light can be extracted, thereby further increasing the light extraction efficiency.
In addition, as shown in fig. 7, the LED chip 7 includes an LED epitaxial layer 60 and an electrode 70, and the electrode 70 includes an N electrode and a P electrode, wherein the N electrode is electrically connected to the N-type semiconductor layer in the LED epitaxial layer 60, and the P electrode is electrically connected to the P-type semiconductor layer in the LED epitaxial layer 60.
The embodiment also provides an electronic device, which includes a plurality of the above-mentioned LED chips, for example, the electronic device includes a display panel, the display panel includes a driving backplane and a plurality of LED chips 7, and electrodes of the LED chips 7 are electrically connected to the driving backplane.
The LED chip provided by the embodiment has higher light extraction efficiency, improves the external quantum efficiency of the LED, enhances the display effect of the electronic equipment manufactured based on the LED chip, and is favorable for improving the user experience of the electronic equipment.
Another alternative embodiment:
in order to make the advantages and details of the LED epitaxial layer, the LED chip and the electronic device based on the LED chip provided in the present application more clear to those skilled in the art, the present embodiment will further describe the aforementioned P-type semiconductor layer growth scheme and the LED epitaxial layer with reference to specific examples:
fig. 8 shows an LED epitaxial layer 80 grown on a sapphire substrate 80a, and the sapphire substrate 80a, an AlN (aluminum nitride) buffer layer 81, a 3D roughened layer 82, a U-type GaN layer 83, an N-type AlGaN (aluminum gallium nitride) layer 84, an N-type GaN layer 85, a quantum well layer 86, an electron blocking layer 87, and a P-type GaN layer 88 are shown in this order from bottom to top. Referring to fig. 9, the P-type GaN layer 88 includes a lower sub-layer 881, a middle sub-layer 882, and an upper sub-layer 883 from bottom to top. The growth process of the P-type GaN layer 88 is described below with reference to the flowchart shown in fig. 10:
s1002: a lower first AlGaN layer is grown under a hydrogen atmosphere.
In this embodiment, the two-dimensional growth mode is different from the three-dimensional growth mode only in the carrier gas, in which pure hydrogen is used as the carrier gas in the two-dimensional growth mode, and pure nitrogen is used as the carrier gas in the three-dimensional growth mode.
Alternatively, when the growth of the P-type GaN layer 88 is started, the lower first AlGaN layer 881a with a thickness of 5nm to 20nm is grown at a growth temperature of 850 ℃ to 1000 ℃, and the lower first AlGaN layer 881a is not doped with Mg.
S1004: a first lower MgN layer was grown under a hydrogen atmosphere.
After the growth of the lower first AlGaN layer 881a is completed, a lower first MgN layer 881b is grown on the lower first AlGaN layer 881a, the lower first MgN layer 881b is doped with In at a concentration of greater than 5E +18atom/cm 3 . The thickness of the lower first MgN layer 881b is between 5nm-20nm, which may be 13nm, for example. The growth temperature of the lower first MgN layer 881b is still 850 ℃ -1000 ℃.
S1006: and growing a lower second AlGaN layer under a hydrogen atmosphere.
Next, a second AlGaN layer 881c, which is 10nm to 30nm thick and is simultaneously doped with In and Mg, is grown while maintaining a growth temperature of 850 deg.C to 1000 deg.C, wherein the In doping concentration is greater than 5E +18atom/cm 3 The Mg doping concentration is more than 1E +19atom/cm 3 . Alternatively, the thickness of the second AlGaN layer 881c may be 12nm, 15nm, or 21nm, 27nm, etc.
S1008: and growing a middle first AlGaN layer in a nitrogen atmosphere.
And growing a middle first AlGaN layer 882a with the thickness between 5nm and 25nm by taking nitrogen as carrier gas, wherein the middle first AlGaN layer 882a is not doped with Mg. In addition, in this embodiment, since the growth temperature in the three-dimensional growth mode is the same as that in the two-dimensional growth mode, the growth temperature range of the middle first AlGaN layer 882a may be 850 ℃ to 1000 ℃.
S1010: and growing a first MgN layer in the middle under the nitrogen atmosphere.
Continuously introducing pure nitrogen into the reaction chamber, growing a middle first MgN layer 882b on the middle first AlGaN layer 882a, wherein the middle first MgN layer 882b is doped with In with the doping concentration of more than 5E +18atom/cm 3 。
S1012: and judging whether the cycle alternation times of the middle first AlGaN layer and the middle first MgN layer reach n times or not.
If the determination result is no, S1008 is continuously executed, otherwise, S1014 is executed. In an example of this embodiment, the value of n is 8, and in another example of this embodiment, the value of n may be 12.
S1014: and growing a middle second AlGaN layer in a nitrogen atmosphere.
After it is determined that the middle first AlGaN layer 882a and the middle first MgN layer 882b have been cyclically and alternately grown n times, a middle second AlGaN layer 882c may be grown on the topmost middle first MgN layer 882b, and the thickness of the grown middle second AlGaN layer 882c may be 10nm, 18nm, 22nm, 35nm, or the like, which is a value between 10nm and 40 nm.
S1016: an upper first AlGaN layer is grown under a hydrogen atmosphere.
After the growth of the middle second AlGaN layer 882c is completed, it means that the growth of the middle layer 882 is completed, and therefore, the introduction of nitrogen into the reaction chamber may be stopped and hydrogen may be introduced instead, so that a hydrogen atmosphere is formed in the reaction chamber, thereby growing the upper layer. Likewise, the growth temperature of the upper part layer is still maintained at 850 ℃ to 1000 ℃.
An upper first AlGaN layer 883a is grown first, and the thickness of the upper first AlGaN layer 883a may be 5nm, 10nm, 18nm, 20nm, etc. at values between 5nm and 20 nm. The upper first AlGaN layer 883a is not Mg doped.
S1018: the upper first MgN layer was grown under a hydrogen atmosphere.
An upper first MgN layer 883b is then grown on the upper first AlGaN layer 883a to a thickness of 5nm to 20nm and contains In doping at a concentration greater than 5E +18 atoms/cm 3 。
S1020: an upper second AlGaN layer is grown under a hydrogen atmosphere.
Finally, an upper second AlGaN layer 883c is grown, the upper second AlGaN layer 883c is doped with Mg and In at the same time, wherein the Mg doping concentration is greater than 1E +19atom/cm 3 The In doping concentration is more than 5E +18atom/cm 3 . The thickness of the upper second AlGaN layer 883c ranges from 10nm to 30nm, for example, the thickness of the upper second AlGaN layer 883c may specifically be 12nm, 25nm, 30nm, or the like.
In this embodiment, the lower part layer and the upper part layer of the P-type semiconductor layer grow in a pure hydrogen atmosphere, and both the crystal quality and the interface quality are good. The middle part of layers grow in a pure nitrogen atmosphere, the first middle AlGaN layer, the first middle MgN layer and the second middle AlGaN layer have high hole concentration, rough surfaces and refractive indexes different from those of the lower part of layers, the high hole concentration enhances the current expansion effect, the rough surfaces increase the total area of the light-emitting surface of the LED chip, and the refractive indexes different from those of the lower non-layered layers can enable photons to have more opportunities to be emitted from the surface of the device, so that the light extraction efficiency is improved. In addition, because the internal reflection can also be reduced by the rough surface, more light can be extracted, the light extraction efficiency of the LED chip is further improved, and the external quantum efficiency of the LED chip is increased.
Yet another alternative embodiment:
this embodiment will provide another scheme for growing a P-type semiconductor layer with reference to fig. 8 to 9, as shown in fig. 10:
s1102: a lower first AlGaN layer is grown at a high temperature.
In this embodiment, the two-dimensional growth mode and the three-dimensional growth mode only have different growth temperatures and have the same carrier gas, for example, the carrier gas for the two-dimensional growth mode and the carrier gas for the three-dimensional growth mode are both pure hydrogen or a mixed gas formed by hydrogen and nitrogen in a certain ratio.
In this embodiment, the high temperature means a temperature greater than 1000 ℃, for example, 1200 ℃, 1250 ℃, etc. Low temperature refers to a relatively low temperature compared to high temperature, for example, in some examples, the low temperature is in the range of 850 ℃ to 900 ℃, and optionally, in some examples, the two-dimensional growth mode corresponds to a growth temperature of 880 ℃.
Alternatively, when the growth of the P-type GaN layer 88 is started, the lower first AlGaN layer 881a with a thickness of 5nm to 30nm is grown first at the growth temperature, and the lower first AlGaN layer 881a is not doped with Mg.
S1104: a first lower MgN layer is grown at high temperature.
After the growth of the lower first AlGaN layer 881a is completed, a lower first MgN layer 881b is grown on the lower first AlGaN layer 881a, the lower first MgN layer 881b is doped with In at a concentration of greater than 5E +18atom/cm 3 . The thickness of the lower first MgN layer 881b is between 5nm-30nm, which may be 18nm, for example.
S1106: a lower second AlGaN layer is grown at a high temperature.
Next, a second AlGaN layer 881c, which is 10nm-40nm thick and is simultaneously doped with In and Mg, is grown while maintaining a growth temperature of more than 1000 deg.C, wherein the In doping concentration is more than 5E +18atom/cm 3 The Mg doping concentration is more than 1E +19atom/cm 3 . Alternatively, the thickness of the second AlGaN layer 881c may be 12nm, 15nm, or 21nm, 27nm, 33nm, or the like.
S1108: and growing a first AlGaN layer in the middle at low temperature.
Subsequently, a middle first AlGaN layer 882a with a thickness between 5nm and 15nm is grown, wherein the middle first AlGaN layer 882a is not doped with Mg.
S1110: the middle first MgN layer is grown at low temperature.
Continuing to grow at the growth temperature of 850-900 ℃, and then growing a middle first MgN layer 882b on the middle first AlGaN layer 882a, wherein the middle first MgN layer 882b is doped with In with the doping concentration of more than 5E +18atom/cm 3 . The thickness of the middle first MgN layer 882b can be kept between 5nm and 20 nm.
S1112: and judging whether the cycle alternation times of the middle first AlGaN layer and the middle first MgN layer reach n times or not.
If the determination result is no, continue to execute S1108, otherwise execute S1114. In an example of the present embodiment, the value of n is 8, and in another example of the present embodiment, the value of n may be 15.
S1114: and growing a middle second AlGaN layer at low temperature.
After it is determined that the middle first AlGaN layer 882a and the middle first MgN layer 882b have been cyclically and alternately grown n times, a middle second AlGaN layer 882c may be grown on the topmost middle first MgN layer 882b, and the thickness of the grown middle second AlGaN layer 882c may be 10nm, 18nm, 22nm, 35nm, or the like, which is a value between 10nm and 40 nm.
S1116: an upper first AlGaN layer is grown at a high temperature.
After the middle second AlGaN layer 882c is grown, it means that the middle layer 882 has already been grown, and therefore, the temperature in the reaction chamber can be raised, thereby growing the upper layered layer.
An upper first AlGaN layer 883a is grown first, and the thickness of the upper first AlGaN layer 883a may be 5nm, 10nm, 18nm, 20nm, etc. at values between 5nm and 30 nm. The upper first AlGaN layer 883a is not Mg doped.
S1118: the upper first MgN layer is grown at high temperature.
An upper first MgN layer 883b is then grown on the upper first AlGaN layer 883a to a thickness of 5nm to 30nm and containing an In dopant at a concentration greater than 5E +18 atoms/cm 3 。
S1120: an upper second AlGaN layer is grown at a high temperature.
Finally, an upper second AlGaN layer 883c is grown, the upper second AlGaN layer 883c is doped with Mg and In at the same time, wherein the Mg doping concentration is greater than 1E +19atom/cm 3 The In doping concentration is more than 5E +18atom/cm 3 . The thickness of the upper second AlGaN layer 883c ranges from 10nm to 40nm, for example, the thickness of the upper second AlGaN layer 883c may specifically be 25nm, 30nm, or the like.
The light extraction efficiency of the LED chip prepared by the growth method of the P-type semiconductor layer provided by the embodiment is obviously improved, the LED chip is ensured to have excellent external quantum efficiency, and the light emitting quality of the LED chip is enhanced.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.

Claims (8)

1. A growth method of a P-type semiconductor layer is characterized in that the P-type semiconductor layer comprises a lower partial layer, a middle partial layer and an upper partial layer, and the growth method of the P-type semiconductor layer comprises the following steps:
growing the lower partial layer in a two-dimensional growth mode;
growing the middle part of layers In a three-dimensional growth mode, wherein the middle part of layers comprises a first AlGaN layer without Mg doping and a first MgN layer with In doping which are alternately grown In a three-dimensional growth mode In a circulating way, and the circulating times are more than 2; growing a middle second AlGaN layer doped with Mg and In simultaneously In a three-dimensional growth mode;
growing the upper part layer in a two-dimensional growth mode;
wherein the contact surface of the middle part layer and the upper part layer is a rough surface with a concave-convex structure.
2. The method for growing a P-type semiconductor layer according to claim 1, wherein the manner of growing in the three-dimensional growth mode includes at least one of:
growing with nitrogen as carrier gas;
growing at a first temperature;
the manner of growing in the two-dimensional growth mode includes at least one of the following two:
growing with hydrogen as carrier gas;
the growth is carried out at a second temperature, the second temperature being higher than the first temperature.
3. The method for growing a P-type semiconductor layer according to claim 1 or 2, wherein the growing the lower partial layer in a two-dimensional growth mode comprises:
growing a first lower AlGaN layer without Mg doping in a two-dimensional growth mode;
growing a first lower magnesium nitride MgN layer doped with indium In a two-dimensional growth mode;
and growing a lower second AlGaN layer doped with Mg and In simultaneously In a two-dimensional growth mode.
4. The method for growing a P-type semiconductor layer according to claim 1 or 2, wherein the growing the upper part layer in a two-dimensional growth mode comprises:
growing an upper first AlGaN layer without Mg doping in a two-dimensional growth mode;
growing an In-doped upper first MgN layer In a two-dimensional growth mode;
and growing an upper second AlGaN layer doped with Mg and In simultaneously In a two-dimensional growth mode.
5. The LED epitaxial layer is characterized by comprising the following components from bottom to top in sequence:
an N-type semiconductor layer;
a quantum well layer; and
a P-type semiconductor layer;
the P-type semiconductor layer comprises a lower part layer, a middle part layer and an upper part layer, wherein the lower part layer and the upper part layer are both two-dimensional mode layers, the middle part layer is a three-dimensional mode layer, and the contact surface of the middle part layer and the upper part layer is a rough surface with a concave-convex structure; the middle part layer comprises from bottom to top: at least two times of circularly alternating Mg-doped middle first AlGaN layers and In-doped middle first MgN layers; and a middle second AlGaN layer doped with Mg and In at the same time.
6. The LED epitaxial layer of claim 5, wherein the lower sub-layer comprises, in order from bottom to top:
a lower first AlGaN layer without Mg doping;
an In-doped lower first MgN layer;
and a lower second AlGaN layer doped with Mg and In at the same time.
7. The LED epitaxial layer of claim 5, wherein the upper layer comprises, in order from bottom to top:
an upper first AlGaN layer without Mg doping;
an In-doped upper first MgN layer;
and an upper second AlGaN layer doped with Mg and In at the same time.
8. An LED chip, characterized in that the LED chip comprises an N electrode, a P electrode and the LED epitaxial layer of any one of claims 5 to 7, wherein the N electrode is electrically connected with the N-type semiconductor layer in the LED epitaxial layer, and the P electrode is electrically connected with the P-type semiconductor layer in the LED epitaxial layer.
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