CN109301038A - A kind of gallium nitride based LED epitaxial slice and preparation method thereof - Google Patents
A kind of gallium nitride based LED epitaxial slice and preparation method thereof Download PDFInfo
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- CN109301038A CN109301038A CN201810932050.1A CN201810932050A CN109301038A CN 109301038 A CN109301038 A CN 109301038A CN 201810932050 A CN201810932050 A CN 201810932050A CN 109301038 A CN109301038 A CN 109301038A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Abstract
The invention discloses a kind of gallium nitride based LED epitaxial slices and preparation method thereof, belong to technical field of semiconductors.Gallium nitride based LED epitaxial slice includes that substrate, electronics offer layer, active layer, electronic barrier layer and hole provide layer, the electronics provides layer, the active layer, the electronic barrier layer and hole offer layer and stacks gradually over the substrate, the electronic barrier layer includes p-type aluminum gallium nitride and at least one the n type gallium nitride layer being inserted in the p-type aluminum gallium nitride, and the thickness of the p-type aluminum gallium nitride is greater than the 1/2 of the thickness of the electronic barrier layer.The present invention forms electronic barrier layer by being inserted at least one n type gallium nitride layer in p-type aluminum gallium nitride, good two-dimensional hole gas is formed between n type gallium nitride layer and p-type aluminum gallium nitride, hole tunnel can be effectively facilitated, improve the mobility in hole, be conducive to electrons and holes recombination luminescence in active layer, the final luminous efficiency for improving LED.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of gallium nitride based LED epitaxial slice and its production
Method.
Background technique
Light emitting diode (English: Light Emitting Diode, referred to as: LED) it is a kind of semi-conductor electricity that can be luminous
Subcomponent.LED is widely paid close attention to because having many advantages, such as energy conservation and environmental protection, high reliablity, long service life, is being carried on the back in recent years
Scape light source and field of display screen yield unusually brilliant results, and start to march to domestic lighting market.Since domestic lighting lays particular emphasis on product
Power and energy saving and service life, therefore reduce LED series resistance and improve LED antistatic effect seem particularly critical.
Epitaxial wafer is the primary finished product in LED preparation process.Existing LED epitaxial wafer include substrate, n type semiconductor layer,
Active layer and p type semiconductor layer, n type semiconductor layer, active layer and p type semiconductor layer stack gradually on substrate.P-type semiconductor
Layer carries out the hole of recombination luminescence for providing, and n type semiconductor layer is used to provide the electronics for carrying out recombination luminescence, and active layer is used for
The radiation recombination for carrying out electrons and holes shines, and substrate is used to provide growing surface for epitaxial material.
The electron amount that N-type semiconductor provides is much larger than the number of cavities of p type semiconductor layer, in addition the volume of electronics is far small
Volume in hole causes the electron amount injected in active layer much larger than number of cavities.In order to avoid n type semiconductor layer offer
Electron transfer into p type semiconductor layer with hole carry out non-radiative recombination, it will usually between active layer and p type semiconductor layer
Electronic barrier layer is set, electronics can be stopped to transit to p type semiconductor layer from active layer.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
Electronic barrier layer, also can be to p type semiconductor layer while stopping electronics to transit to p type semiconductor layer from active layer
The hole injection active layer of offer impacts.And the volume of the volume ratio electronics in hole is big, and the movement in hole is more tired than electronics
Difficulty, therefore hole injection active layer is relatively difficult, influences the recombination luminescence of electrons and holes in active layer, it is final to reduce LED's
Luminous efficiency.
Summary of the invention
The embodiment of the invention provides a kind of gallium nitride based LED epitaxial slice and preparation method thereof, it is able to solve existing
The problem of having technology hole injection active layer relatively difficult, reducing the luminous efficiency of LED.The technical solution is as follows:
On the one hand, the embodiment of the invention provides a kind of gallium nitride based LED epitaxial slice, the gallium nitride base hairs
Optical diode epitaxial wafer includes that substrate, electronics offer layer, active layer, electronic barrier layer and hole provide layer, and the electronics provides
Layer, the active layer, the electronic barrier layer and the hole provide layer and stack gradually over the substrate, the electronic blocking
Layer includes p-type aluminum gallium nitride and at least one the n type gallium nitride layer being inserted in the p-type aluminum gallium nitride, the p-type
The thickness of aluminum gallium nitride is greater than the 1/2 of the thickness of the electronic barrier layer.
Optionally, in the electronic barrier layer each n type gallium nitride layer with a thickness of 2nm~10nm.
Preferably, the quantity of n type gallium nitride layer is 2~10 in the electronic barrier layer.
It is highly preferred that the electronic barrier layer with a thickness of 50nm~150nm.
Optionally, the doping concentration of N type dopant and the p-type in each n type gallium nitride layer in the electronic barrier layer
The doping concentration of P-type dopant is identical in aluminum gallium nitride.
Preferably, the doping concentration of N type dopant is 10 in each n type gallium nitride layer in the electronic barrier layer18cm-3
~1020cm-3, the doping concentration of P-type dopant is 10 in the p-type aluminum gallium nitride18cm-3~1020cm-3。
Optionally, it includes n type gallium nitride layer and at least one p-type gallium nitride layer that the electronics, which provides layer, and described at least one
A p-type gallium nitride layer is inserted in the electronics and provides in the n type gallium nitride layer of layer, and the electronics provides n type gallium nitride layer in layer
Thickness be greater than the electronics provide layer thickness 1/2.
On the other hand, the embodiment of the invention provides a kind of production method of gallium nitride based LED epitaxial slice, institutes
Stating production method includes:
One substrate is provided；
Successively growth electronics provides layer, active layer, electronic barrier layer and hole and provides layer over the substrate；
Wherein, the electronic barrier layer includes p-type aluminum gallium nitride and is inserted in the p-type aluminum gallium nitride extremely
A few n type gallium nitride layer, the thickness of the p-type aluminum gallium nitride are greater than the 1/2 of the thickness of the electronic barrier layer.
Optionally, in the electronic barrier layer growth conditions of n type gallium nitride layer and the p-type aluminum gallium nitride growth
Condition is identical, and the growth conditions includes growth temperature and growth pressure.
Preferably, the growth temperature of the electronic barrier layer is 850 DEG C~1000 DEG C, the growth pressure of the electronic barrier layer
Power is 100torr~500torr.
Technical solution provided in an embodiment of the present invention has the benefit that
Electronic barrier layer is formed by being inserted at least one n type gallium nitride layer in p-type aluminum gallium nitride, due to p-type nitrogen
Change gallium aluminium layer thickness be greater than electronic barrier layer thickness 1/2, therefore electronic barrier layer still can effectively stop electronics from
Active layer transits to hole and provides layer.Good Two-Dimensional Hole is formed between n type gallium nitride layer and p-type aluminum gallium nitride simultaneously
Gas can effectively facilitate hole tunnel, improve the mobility in hole, be conducive to electrons and holes recombination luminescence in active layer, most
The luminous efficiency of LED is improved eventually.And n type gallium nitride layer and p-type aluminum gallium nitride form PN junction, n type gallium nitride layer and p-type nitrogen
Change gallium aluminium layer and become space-charge region, hole can be promoted with the free charge of transverse shifting by existing in space-charge region
Ability extending transversely increases the extension and injection in hole, reduces the bulk resistor of electronic barrier layer, further increases the migration in hole
Rate, the final luminous efficiency for improving LED.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention；
Fig. 2 is a kind of structural schematic diagram of electronic barrier layer provided in an embodiment of the present invention；
Fig. 3 is the structural schematic diagram of another electronic barrier layer provided in an embodiment of the present invention；
Fig. 4 is the structural schematic diagram of another electronic barrier layer provided in an embodiment of the present invention；
Fig. 5 is the structural schematic diagram of another electronic barrier layer provided in an embodiment of the present invention；
Fig. 6 is a kind of process of the production method of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention
Figure.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
The embodiment of the invention provides a kind of gallium nitride based LED epitaxial slices.Fig. 1 provides for the embodiment of the present invention
A kind of gallium nitride based LED epitaxial slice structural schematic diagram.Referring to Fig. 1, the gallium nitride based LED epitaxial slice
There is provided layer 20 including substrate 10, electronics, active layer 30, electronic barrier layer 40 and hole provide layer 50, electronics provides layer 20, active
Layer 30, electronic barrier layer 40 and hole provide layer 50 and are sequentially laminated on substrate 10.
Fig. 2 is a kind of structural schematic diagram of electronic barrier layer provided in an embodiment of the present invention, and Fig. 3 mentions for the embodiment of the present invention
The structural schematic diagram of another electronic barrier layer supplied, Fig. 4 are the knot of another electronic barrier layer provided in an embodiment of the present invention
Structure schematic diagram, Fig. 5 are the structural schematic diagram of another electronic barrier layer provided in an embodiment of the present invention.Referring to fig. 2~Fig. 5,
In the present embodiment, electronic barrier layer 40 includes 41 (such as Al of p-type aluminum gallium nitrideyGa1-yN, 0.1 < y < 0.5) and it is inserted in P
The thickness of at least one n type gallium nitride layer 42 in type aluminum gallium nitride 41, p-type aluminum gallium nitride 41 is greater than electronic barrier layer 40
Thickness 1/2.
The embodiment of the present invention forms electronic blocking by being inserted at least one n type gallium nitride layer in p-type aluminum gallium nitride
Layer, since the thickness of p-type aluminum gallium nitride is greater than the 1/2 of the thickness of electronic barrier layer, electronic barrier layer can still have
Effect stops electronics to transit to hole offer layer from active layer.It is formed between n type gallium nitride layer and p-type aluminum gallium nitride simultaneously good
Two-dimensional hole gas, hole tunnel can be effectively facilitated, improve the mobility in hole, it is multiple to be conducive in active layer electrons and holes
It closes and shines, the final luminous efficiency for improving LED.And n type gallium nitride layer and p-type aluminum gallium nitride form PN junction, n type gallium nitride
Layer and p-type aluminum gallium nitride become space-charge region, and existing in space-charge region can be with the free charge of transverse shifting, Ke Yiti
The ability extending transversely in lift-off cave, increases the extension and injection in hole, reduces the bulk resistor of electronic barrier layer, further increase sky
The mobility in cave, the final luminous efficiency for improving LED.
In practical applications, as shown in Figures 2 and 3, the number for the n type gallium nitride layer 42 being inserted into p-type aluminum gallium nitride 41
Amount can be one；As shown in Figure 4 and Figure 5, the quantity for the n type gallium nitride layer 42 being inserted into p-type aluminum gallium nitride 41 can also be with
It is multiple.N type gallium nitride layer 42 as shown in Figure 2 and Figure 4 can be uniformly inserted in p-type aluminum gallium nitride 41, i.e. n type gallium nitride
The thickness of the p-type aluminum gallium nitride 41 of 42 two sides of layer is identical；As shown in Figure 3 and Figure 5, n type gallium nitride layer 42 can also be inserted arbitrarily
Enter any position in p-type aluminum gallium nitride 41, as 42 two sides of n type gallium nitride layer p-type aluminum gallium nitride 41 thickness not
Together.It should be noted that the quantity of n type gallium nitride layer and insertion position are only for example in Fig. 2~Fig. 5, specific reality of the invention
Now it is not restricted to this.
Optionally, the thickness of each n type gallium nitride layer 42 can be 2nm~10nm in electronic barrier layer 40, preferably
6nm.If the thickness of n type gallium nitride layer is less than 2nm in electronic barrier layer, may be due to n type gallium nitride in electronic barrier layer
Layer is relatively thin and good two-dimensional hole gas can not be formed with p-type aluminum gallium nitride, can not effectively facilitate hole tunnel, cause LED
Luminous efficiency it is lower；If the thickness of n type gallium nitride layer is greater than 10nm in electronic barrier layer, may be due to electronic barrier layer
Middle n type gallium nitride layer it is thicker and and hole-recombination, reduce the number of cavities in injection active layer, the final luminous effect for reducing LED
Rate.
Further, the quantity of n type gallium nitride layer 42 can be 2~10, preferably 6 in electronic barrier layer 40.
If the quantity of n type gallium nitride layer is less than 2 in electronic barrier layer, may be due to n type gallium nitride layer in electronic barrier layer
The tunnel effect of negligible amounts, hole is poor, causes the luminous efficiency of LED lower；If n type gallium nitride layer in electronic barrier layer
Quantity be more than 10, then may it is more due to the quantity of n type gallium nitride layer in electronic barrier layer and with hole-recombination, reduce note
Enter the number of cavities in active layer, the final luminous efficiency for reducing LED.
Further, the thickness of electronic barrier layer 40 can be 50nm~150nm, preferably 100nm.If electronics hinders
The thickness of barrier is less than 50nm, then effectively electron transition may can not be stopped to provide layer to hole since electronic barrier layer is relatively thin
In, cause LED chip to leak electricity, reduces the antistatic effect of LED；It, may be by if the thickness of electronic barrier layer is greater than 150nm
It is thicker in electronic barrier layer and influence hole injection active layer in, reduce the luminous efficiency of LED.
Optionally, the doping concentration of N type dopant can be with p-type in each n type gallium nitride layer 42 in electronic barrier layer 40
The doping concentration of P-type dopant is identical in aluminum gallium nitride 41, more simple and convenient in realization.
Specifically, the doping concentration of N type dopant can be in each n type gallium nitride layer 42 in electronic barrier layer 40
1018cm-3~1020cm-3, preferably 1019cm-3.If the doping of N type dopant is dense in n type gallium nitride layer in electronic barrier layer
Degree is lower than 1018cm-3, then may be since the doping concentration of N type dopant is lower in n type gallium nitride layer in electronic barrier layer and nothing
Method and p-type aluminum gallium nitride form good two-dimensional hole gas, can not effectively facilitate hole tunnel, cause the luminous efficiency of LED
It is lower；If the doping concentration of N type dopant is higher than 10 in n type gallium nitride layer in electronic barrier layer20cm-3, then may be due to electricity
In sub- barrier layer in n type gallium nitride layer the doping concentration of N type dopant it is higher and with hole-recombination, reduce injection active layer in
Number of cavities, the final luminous efficiency for reducing LED.
Specifically, the doping concentration of P-type dopant can be 10 in p-type aluminum gallium nitride 4118cm-3~1020cm-3, preferably
It is 1019cm-3.If the doping concentration of P-type dopant is lower than 10 in p-type aluminum gallium nitride18cm-3, then may be nitrogenized due to p-type
In gallium aluminium layer the doping concentration of P-type dopant it is lower and influence hole injection active layer in, reduce the luminous efficiency of LED；If P
The doping concentration of P-type dopant is higher than 10 in type aluminum gallium nitride20cm-3, then may be due to p-type doping in p-type aluminum gallium nitride
The doping concentration of agent is higher and causes the crystal quality of electronic barrier layer poor, influences the crystal quality of epitaxial wafer entirety, finally
Reduce the luminous efficiency of LED.
In a kind of implementation of the present embodiment, it may include n type gallium nitride layer 21 and at least one that electronics, which provides layer 20,
A p-type gallium nitride layer 22, at least one p-type gallium nitride layer 22 are inserted in electronics and provide in the n type gallium nitride layer 21 of layer 20, electronics
The thickness for providing n type gallium nitride layer 21 in layer 20 is greater than electronics provides the thickness of layer 20 1/2.
Electronics offer layer is formed by being inserted at least one p-type gallium nitride layer in n type gallium nitride layer, since N-type nitrogenizes
The thickness of gallium layer is greater than 1/2 that electronics provides the thickness of layer, therefore electronics offer layer can provide recombination luminescence for active layer
Electronics.P-type gallium nitride layer and n type gallium nitride layer form PN junction simultaneously, and p-type gallium nitride layer and n type gallium nitride layer become space electricity
He Qu, the ability extending transversely of electronics can be promoted with the free charge of transverse shifting by existing in space-charge region, increase electricity
Son provides the extension and transmission of electric current in layer, reduces electronics and provides the bulk resistor of layer, and then reduces the forward voltage of chip.
In practical applications, the quantity for the p-type gallium nitride layer 22 being inserted into the n type gallium nitride layer 21 of electronics offer layer 20 can
Think one, or multiple.P-type gallium nitride layer 22 can uniformly be inserted in electronics and provide the n type gallium nitride layer 21 of layer 20
In, i.e. the thickness of the n type gallium nitride layer 21 of 22 two sides of p-type gallium nitride layer is identical；It can also be optionally plugged into n type gallium nitride layer 21
In any position, i.e. the thickness of the n type gallium nitride layer 21 of 22 two sides of p-type gallium nitride layer is different.
Optionally, the thickness of each p-type gallium nitride layer 22 can be 5nm~30nm, preferably 20nm.If p-type nitrogenizes
The thickness of gallium layer is less than 5nm, then may can not cooperatively form PN junction with n type gallium nitride layer since p-type gallium nitride layer is relatively thin, lead
Cause can not effectively promote the ability extending transversely of electronics；If the thickness of p-type gallium nitride layer is greater than 30nm, may be due to p-type
Gallium nitride layer is thicker and compound with the electronics in n type gallium nitride layer, reduces electronics and provides the electron amount that layer injects in active layer,
The final luminous efficiency for reducing LED.
Further, the quantity of each p-type gallium nitride layer 22 can be 1~20, preferably 10.If p-type nitrogen
The quantity for changing gallium layer is greater than 20, then may be more due to the quantity of p-type gallium nitride layer and multiple with the electronics in n type gallium nitride layer
It closes, reduces electronics and the electron amount that layer injects in active layer, the final luminous efficiency for reducing LED are provided.
Further, it can be 2 μm~8 μm, preferably 5 μm that electronics, which provides the thickness of layer 20,.If electronics provides layer
Thickness less than 2 μm, then it is relatively thin and cause the forward voltage of LED chip higher may to provide layer due to electronics；If electronics mentions
It is greater than 8 μm for the thickness of layer, then may causes the waste of material since electronics offer layer is thicker.
Optionally, the doping concentration of P-type dopant can provide N-type in layer 20 with electronics in each p-type gallium nitride layer 22
The doping concentration of N type dopant is identical in gallium nitride layer 21.
P-type gallium nitride layer and n type gallium nitride layer use identical doping concentration, more simple and convenient in realization.Exist simultaneously
Under identical doping concentration, the electron amount that the number of cavities that P-type dopant provides can be provided much smaller than N type dopant will not
It influences electronics and provides layer to active layer injection electronics.
Specifically, the doping concentration of P-type dopant can be 10 in each p-type gallium nitride layer 2218cm-3~1020cm-3.Such as
The doping concentration of P-type dopant is less than 10 in fruit p-type gallium nitride layer18cm-3, then may be due to p-type doping in p-type gallium nitride layer
The doping concentration of agent is lower and PN junction can not be cooperatively formed with n type gallium nitride layer, leads to not the lateral expansion for effectively promoting electronics
Exhibition ability；If the doping concentration of P-type dopant is greater than 10 in p-type gallium nitride layer20cm-3, then may be due to p-type gallium nitride layer
The doping concentration of middle P-type dopant is higher and compound with the electronics in n type gallium nitride layer, reduces electronics and provides layer injection active layer
In electron amount, the final luminous efficiency for reducing LED.
Specifically, it can be 10 that electronics, which provides the doping concentration of N type dopant in n type gallium nitride layer 21 in layer 20,18cm-3
~1020cm-3.If the doping concentration of N type dopant is less than 10 in n type gallium nitride layer18cm-3, then may be due to n type gallium nitride
Layer in N type dopant doping concentration it is lower and influence electronics provide layer electronics is injected into active layer；If n type gallium nitride layer
The doping concentration of middle N type dopant is greater than 1020cm-3, then may due to N type dopant in n type gallium nitride layer doping concentration compared with
Crystal quality that is high and influencing epitaxial wafer entirety, the final luminous efficiency for reducing LED.
In another implementation of the present embodiment, the material that electronics provides layer 20 can use the nitridation of n-type doping
Gallium.
Further, it can be 2 μm~8 μm, preferably 5 μm that electronics, which provides the thickness of layer 20,；Electronics provides N-type in layer 20
The doping concentration of dopant can be 1018/cm3~1020/cm3, preferably 1019/cm3。
Specifically, the material of substrate 10 can use sapphire (main material is aluminum oxide), as crystal orientation is
[0001] sapphire.Active layer 30 may include that multiple Quantum Well and multiple quantum are built, and multiple Quantum Well and multiple quantum are built
Alternately laminated setting；The material of Quantum Well can use InGaN (InGaN), such as InxGa1-xN, 0 < x < 1, what quantum was built
Material can use gallium nitride.The material that hole provides layer 50 can be using the gallium nitride of p-type doping (such as magnesium).
Further, the thickness of Quantum Well can be 3nm~4nm, preferably 3.5nm；The thickness that quantum is built can be 9nm
~20nm, preferably 15nm；The quantity of Quantum Well is identical as the quantity that quantum is built, and the quantity that quantum is built can be 5~11,
Preferably 8.The thickness that hole provides layer 50 can be 100nm~500nm, preferably 300nm；Hole provides p-type in layer 50
The doping concentration of dopant can be 1018/cm3~1020/cm3, preferably 1019/cm3。
Optionally, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include buffer layer 61, buffer layer
61 settings provide between layer 20 in substrate 10 and electronics, to alleviate the stress that lattice mismatch generates between substrate material and gallium nitride
And defect, and nuclearing centre is provided for gallium nitride material epitaxial growth.
Specifically, the material of buffer layer 61 can use gallium nitride.
Further, the thickness of buffer layer 61 can be 15nm~40nm, preferably 25nm.
Preferably, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include undoped gallium nitride layer
62, the setting of undoped gallium nitride layer 62 provides between layer 20 in buffer layer 61 and electronics, further to alleviate substrate material and nitrogen
Change the stress and defect that lattice mismatch generates between gallium, provides crystal quality preferable growing surface for epitaxial wafer main structure.
In specific implementation, buffer layer is the gallium nitride of the layer of low-temperature epitaxy first in patterned substrate, because
This is also referred to as low temperature buffer layer.The longitudinal growth for carrying out gallium nitride in low temperature buffer layer again, will form multiple mutually independent three
Island structure is tieed up, referred to as three-dimensional nucleating layer；Then it is carried out between each three-dimensional island structure on all three-dimensional island structures
The cross growth of gallium nitride forms two-dimension plane structure, referred to as two-dimentional retrieving layer；The finally high growth temperature one on two-dimensional growth layer
The thicker gallium nitride of layer, referred to as intrinsic gallium nitride layer.By three-dimensional nucleating layer, two-dimentional retrieving layer and intrinsic gallium nitride in the present embodiment
Layer is referred to as undoped gallium nitride layer.
Further, the thickness of three-dimensional nucleating layer can be 100nm~600nm, preferably 350nm；Two-dimentional retrieving layer
Thickness can be 500nm~800nm, preferably 650nm；The thickness of intrinsic gallium nitride layer can be 800nm~2 μm, preferably
1.4μm。
Optionally, it as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include stress release layer 70, answers
The setting of power releasing layer 70 provides between layer 20 and active layer 30 in electronics, to generate to lattice mismatch between sapphire and gallium nitride
Stress discharged, improve the crystal quality of active layer, be conducive to electrons and holes active layer carry out radiation recombination shine,
The internal quantum efficiency of LED is improved, and then improves the luminous efficiency of LED.
Specifically, the material of stress release layer 70 can use gallium indium aluminum nitrogen (AlInGaN), can be released effectively sapphire
The stress generated with gallium nitride crystal lattice mismatch, improves the crystal quality of epitaxial wafer, improves the luminous efficiency of LED.
Preferably, the molar content of aluminium component can be less than or equal to 0.2, in stress release layer 70 in stress release layer 70
The molar content of indium component can be less than or equal to 0.05, to avoid adverse effect is caused.
Further, the thickness of stress release layer 70 can be 50nm~500nm, preferably 300nm.
Optionally, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include low temperature P-type layer 80, low temperature
P-type layer 80 is arranged between active layer 30 and electronic barrier layer 40, has caused to avoid the higher growth temperature of electronic barrier layer
Phosphide atom in active layer is precipitated, and influences the luminous efficiency of light emitting diode.
Specifically, the material of low temperature P-type layer 80 can be identical for the material that provides layer 50 with hole.In the present embodiment,
The material of low temperature P-type layer 80 can be the gallium nitride of p-type doping.
Further, the thickness of low temperature P-type layer 80 can be 10nm~50nm, preferably 30nm；P in low temperature P-type layer 80
The doping concentration of type dopant can be 1018/cm3~1020/cm3, preferably 1019/cm3。
Optionally, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include p-type contact layer 90, p-type
The setting of contact layer 90 provides on layer 50 in hole, between the electrode or transparent conductive film that are formed in chip fabrication technique
Form Ohmic contact.
Specifically, the material of p-type contact layer 90 can be using the InGaN of p-type doping.
Further, the thickness of p-type contact layer 90 can be 5nm~100nm, preferably 50nm；P in p-type contact layer 90
The doping concentration of type dopant can be 1021/cm3~1022/cm3, preferably 5*1021/cm3。
A kind of specific implementation of gallium nitride based LED epitaxial slice shown in FIG. 1 includes: substrate 10, electronics offer layer
20, active layer 30, electronic barrier layer 40 and hole provide layer 50, and electronics provides layer 20, active layer 30, electronic barrier layer 40 and sky
Cave provides layer 50 and is sequentially laminated on substrate 10.Wherein, the material of substrate 10 uses sapphire；The material that electronics provides layer 20 is adopted
With the gallium nitride of n-type doping, with a thickness of 5 μm, the doping concentration of N type dopant is 1019cm-3；Active layer 30 includes alternately laminated
8 Quantum Well and 8 quantum build, the material of Quantum Well uses InGaN, and Quantum Well is built with a thickness of 3.5nm, quantum
Material use gallium nitride, quantum build with a thickness of 15nm；Electronic barrier layer 40 is including p-type aluminum gallium nitride 41 and is inserted in P
2 n type gallium nitride layers 42 in type aluminum gallium nitride 41, n type gallium nitride layer 42 with a thickness of 10nm, electricity in electronic barrier layer 40
The doping concentration of N type dopant is 10 in n type gallium nitride layer 42 in sub- barrier layer 4018cm-3, p-type in p-type aluminum gallium nitride 41
The doping concentration of dopant is 1018cm-3, electronic barrier layer with a thickness of 50nm；The material that p-type hole provides layer 50 uses p-type
The gallium nitride of doping, with a thickness of 300nm, the doping concentration of P-type dopant is 1019cm-3。
Chip is made in above-mentioned epitaxial wafer, providing layer by one with electronics is 10 with a thickness of 100nm, doped with concentration19cm-3P-type dopant AlGaN layer composition and the identical epitaxial wafer of other layers of structure made of chip compare, luminous efficiency improve
5%~8%.
A kind of specific implementation of gallium nitride based LED epitaxial slice shown in FIG. 1 includes: substrate 10, electronics offer layer
20, active layer 30, electronic barrier layer 40 and hole provide layer 50, and electronics provides layer 20, active layer 30, electronic barrier layer 40 and sky
Cave provides layer 50 and is sequentially laminated on substrate 10.Wherein, the material of substrate 10 uses sapphire；The material that electronics provides layer 20 is adopted
With the gallium nitride of n-type doping, with a thickness of 5 μm, the doping concentration of N type dopant is 1019cm-3；Active layer 30 includes alternately laminated
8 Quantum Well and 8 quantum build, the material of Quantum Well uses InGaN, and Quantum Well is built with a thickness of 3.5nm, quantum
Material use gallium nitride, quantum build with a thickness of 15nm；Electronic barrier layer 40 is including p-type aluminum gallium nitride 41 and is inserted in P
6 n type gallium nitride layers 42 in type aluminum gallium nitride 41, n type gallium nitride layer 42 with a thickness of 6nm, electricity in electronic barrier layer 40
The doping concentration of N type dopant is 10 in n type gallium nitride layer 42 in sub- barrier layer 4019cm-3, p-type in p-type aluminum gallium nitride 41
The doping concentration of dopant is 1019cm-3, electronic barrier layer with a thickness of 100nm；The material that p-type hole provides layer 50 uses P
The gallium nitride of type doping, with a thickness of 300nm, the doping concentration of P-type dopant is 1019cm-3。
Chip is made in above-mentioned epitaxial wafer, providing layer by one with electronics is 10 with a thickness of 100nm, doped with concentration19cm-3P-type dopant AlGaN layer composition and the identical epitaxial wafer of other layers of structure made of chip compare, luminous efficiency improve
4%~6%.
A kind of specific implementation of gallium nitride based LED epitaxial slice shown in FIG. 1 includes: substrate 10, electronics offer layer
20, active layer 30, electronic barrier layer 40 and hole provide layer 50, and electronics provides layer 20, active layer 30, electronic barrier layer 40 and sky
Cave provides layer 50 and is sequentially laminated on substrate 10.Wherein, the material of substrate 10 uses sapphire；The material that electronics provides layer 20 is adopted
With the gallium nitride of n-type doping, with a thickness of 5 μm, the doping concentration of N type dopant is 1019cm-3；Active layer 30 includes alternately laminated
8 Quantum Well and 8 quantum build, the material of Quantum Well uses InGaN, and Quantum Well is built with a thickness of 3.5nm, quantum
Material use gallium nitride, quantum build with a thickness of 15nm；Electronic barrier layer 40 is including p-type aluminum gallium nitride 41 and is inserted in P
10 n type gallium nitride layers 42 in type aluminum gallium nitride 41, n type gallium nitride layer 42 with a thickness of 2nm, electricity in electronic barrier layer 40
The doping concentration of N type dopant is 10 in n type gallium nitride layer 42 in sub- barrier layer 4020cm-3, p-type in p-type aluminum gallium nitride 41
The doping concentration of dopant is 1020cm-3, electronic barrier layer with a thickness of 150nm；The material that p-type hole provides layer 50 uses P
The gallium nitride of type doping, with a thickness of 300nm, the doping concentration of P-type dopant is 1019cm-3。
Chip is made in above-mentioned epitaxial wafer, providing layer by one with electronics is 10 with a thickness of 100nm, doped with concentration19cm-3P-type dopant AlGaN layer composition and the identical epitaxial wafer of other layers of structure made of chip compare, luminous efficiency improve
2%~5%.
A kind of specific implementation of gallium nitride based LED epitaxial slice shown in FIG. 1 includes: substrate 10, electronics offer layer
20, active layer 30, electronic barrier layer 40 and hole provide layer 50, and electronics provides layer 20, active layer 30, electronic barrier layer 40 and sky
Cave provides layer 50 and is sequentially laminated on substrate 10.Wherein, the material of substrate 10 uses sapphire；It includes N-type that electronics, which provides layer 20,
Gallium nitride layer 21 and 2 p-type gallium nitride layers 22 being inserted in n type gallium nitride layer 21, p-type gallium nitride layer 22 with a thickness of
20nm, the doping concentration of P-type dopant is 10 in p-type gallium nitride layer 2219cm-3, N type dopant mixes in n type gallium nitride layer 21
Miscellaneous concentration is 1019m-3, electronics provide layer 20 with a thickness of 4 μm；Active layer 30 includes alternately stacked 8 Quantum Well and 8 amounts
Son is built, and the material of Quantum Well uses InGaN, Quantum Well with a thickness of 3.5nm, the material that quantum is built uses gallium nitride, quantum
Build with a thickness of 15nm；Electronic barrier layer 40 include p-type aluminum gallium nitride 41 and be inserted in p-type aluminum gallium nitride 41 2
A n type gallium nitride layer 42, in electronic barrier layer 40 n type gallium nitride layer 42 with a thickness of 10nm, N-type nitridation in electronic barrier layer 40
The doping concentration of N type dopant is 10 in gallium layer 4218cm-3, the doping concentration of P-type dopant is in p-type aluminum gallium nitride 41
1018cm-3, electronic barrier layer with a thickness of 50nm；The material that p-type hole provides layer 50 uses the gallium nitride of p-type doping, thickness
For 300nm, the doping concentration of P-type dopant is 1019cm-3。
Chip is made in above-mentioned epitaxial wafer, providing layer by one with electronics is 10 with a thickness of 100nm, doped with concentration19cm-3P-type dopant AlGaN layer composition and the identical epitaxial wafer of other layers of structure made of chip compare, luminous efficiency improve
8%~10%.
A kind of specific implementation of gallium nitride based LED epitaxial slice shown in FIG. 1 includes: substrate 10, electronics offer layer
20, active layer 30, electronic barrier layer 40 and hole provide layer 50, and electronics provides layer 20, active layer 30, electronic barrier layer 40 and sky
Cave provides layer 50 and is sequentially laminated on substrate 10.Wherein, the material of substrate 10 uses sapphire；It includes N-type that electronics, which provides layer 20,
Gallium nitride layer 21 and 10 p-type gallium nitride layers 22 being inserted in n type gallium nitride layer 21, p-type gallium nitride layer 22 with a thickness of
10nm, the doping concentration of P-type dopant is 10 in p-type gallium nitride layer 2219cm-3, N type dopant mixes in n type gallium nitride layer 21
Miscellaneous concentration is 1019cm-3, electronics provide layer 20 with a thickness of 4 μm；Active layer 30 includes alternately stacked 8 Quantum Well and 8
Quantum is built, and the material of Quantum Well uses InGaN, Quantum Well with a thickness of 3.5nm, the material that quantum is built uses gallium nitride, amount
Son build with a thickness of 15nm；Electronic barrier layer 40 includes p-type aluminum gallium nitride 41 and is inserted in p-type aluminum gallium nitride 41
6 n type gallium nitride layers 42, in electronic barrier layer 40 n type gallium nitride layer 42 with a thickness of 6nm, N-type nitridation in electronic barrier layer 40
The doping concentration of N type dopant is 10 in gallium layer 4219cm-3, the doping concentration of P-type dopant is in p-type aluminum gallium nitride 41
1019cm-3, electronic barrier layer with a thickness of 100nm；The material that p-type hole provides layer 50 uses the gallium nitride of p-type doping, thickness
For 300nm, the doping concentration of P-type dopant is 1019cm-3。
Chip is made in above-mentioned epitaxial wafer, providing layer by one with electronics is 10 with a thickness of 100nm, doped with concentration19cm-3P-type dopant AlGaN layer composition and the identical epitaxial wafer of other layers of structure made of chip compare, luminous efficiency improve
3%~6%.
The embodiment of the invention provides a kind of production methods of gallium nitride based LED epitaxial slice, are suitable for production figure
Gallium nitride based LED epitaxial slice shown in 1.Fig. 6 is a kind of gallium nitride based light emitting diode provided in an embodiment of the present invention
The flow chart of the production method of epitaxial wafer, referring to Fig. 6, which includes:
Step 201: a substrate is provided.
Controlled at 1000 DEG C~1200 DEG C (preferably 1100 DEG C), in hydrogen atmosphere to substrate carry out 1 minute~
It makes annealing treatment within 10 minutes (preferably 5 minutes)；
Nitrogen treatment is carried out to substrate.
The surface for cleaning substrate through the above steps avoids being conducive to the life for improving epitaxial wafer in impurity incorporation epitaxial wafer
Long quality.
Step 202: successively growth electronics provides layer, active layer, electronic barrier layer and hole and provides layer on substrate.
In the present embodiment, electronic barrier layer includes p-type aluminum gallium nitride and is inserted in p-type aluminum gallium nitride extremely
A few n type gallium nitride layer, the thickness of p-type aluminum gallium nitride are greater than the 1/2 of the thickness of electronic barrier layer.
Optionally, the growth conditions of n type gallium nitride layer can be with the growth conditions of p-type aluminum gallium nitride in electronic barrier layer
Identical, growth conditions includes growth temperature and growth pressure.Using identical growth conditions, relatively simple convenience is realized.
Specifically, the growth temperature of electronic barrier layer can be 850 DEG C~1000 DEG C, and the growth pressure of electronic barrier layer can
Think 100torr~500torr.The growth temperature and growth pressure of electronic barrier layer are matched, it is preferably electric to obtain growth quality
Sub- barrier layer.
Optionally, before the growth of n type gallium nitride layer, which can also include:
Using buffered hydrofluoride acid (English: buffered hydrofluoride acid, abbreviation: BHF) to p-type
The surface of aluminum gallium nitride is handled.
It, can be with by being handled using surface of the BHF to p-type aluminum gallium nitride after the growth of p-type aluminum gallium nitride
The P-type dopant (such as magnesium elements) for removing p-type aluminum gallium nitride surface enrichment, avoids P-type dopant from diffusing into subsequent growth
N type gallium nitride layer in.
Preferably, the handling duration of BHF can be 5min~30min, preferably 15min.If the handling duration of BHF is small
It, then may magnesium member shorter due to the handling duration of BHF effectively to remove p-type aluminum gallium nitride surface enrichment in 5min
Element；If the handling duration of BHF is greater than 30min, p-type aluminum gallium nitride may be caused since the handling duration of BHF is longer
In magnesium elements it is lower, influence hole injection active layer in.
Specifically, the temperature of BHF can for 20 DEG C~40 DEG C, preferably room temperature, such as 25 DEG C, to reduce cost of implementation.Such as
The temperature of fruit BHF then may cause the processing speed of BHF slower less than 20 DEG C since the temperature of BHF is lower, influence growth effect
Rate；If the temperature of BHF is greater than 40 DEG C, the processing speed of BHF may be caused to hand over fastly since the temperature of BHF is higher, come not
And stop processing of the BHF to p-type aluminum gallium nitride in time.
Specifically, which may include:
The first step, controlled at 1000 DEG C~1200 DEG C (preferably 1100 DEG C), pressure is 100torr~500torr
(preferably 300torr) grows electronics on substrate and provides layer；
Second step provides in electronics and grows active layer on layer；Wherein, the growth temperature of Quantum Well is 720 DEG C~829 DEG C
(preferably 760 DEG C), pressure are 100torr~500torr (preferably 300torr)；Quantum build growth temperature be 850 DEG C~
959 DEG C (preferably 900 DEG C), pressure is 100torr~500torr (preferably 300torr)；
Third step, controlled at 850 DEG C~1000 DEG C (preferably 900 DEG C), pressure is that 100torr~300torr is (excellent
It is selected as 200torr), electronic barrier layer is grown on active layer.
4th step, controlled at 850 DEG C~1000 DEG C (preferably 900 DEG C), pressure is that 100torr~300torr is (excellent
It is selected as 200torr), hole is grown on electronic barrier layer, and layer is provided.
Optionally, before the first step, which can also include:
Grown buffer layer on substrate.
Correspondingly, electronics provides layer growth on the buffer layer.
Specifically, grown buffer layer on substrate may include:
Controlled at 400 DEG C~600 DEG C (preferably 500 DEG C), pressure be 400torr~600torr (preferably
500torr), grown buffer layer on substrate；
Controlled at 1000 DEG C~1200 DEG C (preferably 1100 DEG C), pressure be 400torr~600torr (preferably
500torr), the in-situ annealing carried out 5 minutes~10 minutes (preferably 8 minutes) to buffer layer is handled.
Preferably, on substrate after grown buffer layer, which can also include:
Undoped gallium nitride layer is grown on the buffer layer.
Correspondingly, electronics provides layer and is grown on undoped gallium nitride layer.
Specifically, undoped gallium nitride layer is grown on the buffer layer, may include:
Controlled at 1000 DEG C~1100 DEG C (preferably 1050 DEG C), pressure be 100torr~600torr (preferably
300torr), growing three-dimensional nucleating layer, growth time are 10min~20min on the buffer layer；
Controlled at 1000 DEG C~1200 DEG C (preferably 1100 DEG C), pressure be 100torr~500torr (preferably
300torr), two-dimentional retrieving layer is grown on three-dimensional nucleating layer, growth time is 10min~20min, growth time 20min
~40min；
Controlled at 1000 DEG C~1200 DEG C (preferably 1100 DEG C), pressure be 100torr~500torr (preferably
300torr), intrinsic gallium nitride layer is grown in two-dimentional retrieving layer.
Optionally, before second step, which can also include:
Growth stress releasing layer on layer is provided in electronics.
Correspondingly, active layer is grown on stress release layer.
Specifically, growth stress releasing layer on layer is provided in electronics, may include:
Controlled at 800 DEG C~1100 DEG C (preferably 950 DEG C), pressure be 100torr~500torr (preferably
300torr), growth stress releasing layer on layer is provided in electronics.
Optionally, before third step, which can also include:
The growing low temperature P-type layer on active layer.
Correspondingly, electronic barrier layer is grown in low temperature P-type layer.
Specifically, the growing low temperature P-type layer on active layer may include:
Controlled at 600 DEG C~850 DEG C (preferably 750 DEG C), pressure be 100torr~600torr (preferably
300torr), the growing low temperature P-type layer on active layer.
Optionally, after the 4th step, which can also include:
Growing P-type contact layer on layer is provided in hole.
Specifically, growing P-type contact layer on layer is provided in hole, may include:
Controlled at 850 DEG C~1050 DEG C (preferably 950 DEG C), pressure be 100torr~300torr (preferably
200torr), growing P-type contact layer on layer is provided in hole.
It should be noted that after above-mentioned epitaxial growth terminates, can first by temperature be reduced to 650 DEG C~850 DEG C (preferably
It is 750 DEG C), the annealing of 5 minutes~15 minutes (preferably 10 minutes) is carried out to epitaxial wafer in nitrogen atmosphere, then again
The temperature of epitaxial wafer is reduced to room temperature.
Control temperature, pressure each mean temperature, pressure in the reaction chamber of control growth epitaxial wafer, and specially metal is organic
Compound chemical gaseous phase deposition (English: Metal-organic Chemical Vapor Deposition, referred to as: MOCVD) set
Standby reaction chamber.Using trimethyl gallium or triethyl-gallium as gallium source when realization, high-purity ammonia is as nitrogen source, and trimethyl indium is as indium
Source, for trimethyl aluminium as silicon source, N type dopant selects silane, and P-type dopant selects two luxuriant magnesium.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of gallium nitride based LED epitaxial slice, the gallium nitride based LED epitaxial slice includes substrate, electronics
Layer, active layer, electronic barrier layer and hole are provided, layer is provided, the electronics provides layer, the active layer, the electronic barrier layer
It provides layer with the hole to stack gradually over the substrate, which is characterized in that the electronic barrier layer includes p-type aluminium gallium nitride alloy
Layer and at least one the n type gallium nitride layer being inserted in the p-type aluminum gallium nitride, the thickness of the p-type aluminum gallium nitride
Greater than the 1/2 of the thickness of the electronic barrier layer.
2. gallium nitride based LED epitaxial slice according to claim 1, which is characterized in that in the electronic barrier layer
Each n type gallium nitride layer with a thickness of 2nm~10nm.
3. gallium nitride based LED epitaxial slice according to claim 2, which is characterized in that in the electronic barrier layer
The quantity of n type gallium nitride layer is 2~10.
4. gallium nitride based LED epitaxial slice according to claim 3, which is characterized in that the electronic barrier layer
With a thickness of 50nm~150nm.
5. gallium nitride based LED epitaxial slice according to any one of claims 1 to 4, which is characterized in that the electricity
P-type dopant in the doping concentration of N type dopant and the p-type aluminum gallium nitride in each n type gallium nitride layer in sub- barrier layer
Doping concentration it is identical.
6. gallium nitride based LED epitaxial slice according to claim 5, which is characterized in that in the electronic barrier layer
The doping concentration of N type dopant is 10 in each n type gallium nitride layer18cm-3~1020cm-3, p-type in the p-type aluminum gallium nitride
The doping concentration of dopant is 1018cm-3~1020cm-3。
7. gallium nitride based LED epitaxial slice according to any one of claims 1 to 4, which is characterized in that the electricity
It includes n type gallium nitride layer and at least one p-type gallium nitride layer that son, which provides layer, at least one described p-type gallium nitride layer is inserted in institute
It states electronics to provide in the n type gallium nitride layer of layer, the thickness that the electronics provides n type gallium nitride layer in layer is provided greater than the electronics
The 1/2 of the thickness of layer.
8. a kind of production method of gallium nitride based LED epitaxial slice, which is characterized in that the production method includes:
One substrate is provided；
Successively growth electronics provides layer, active layer, electronic barrier layer and hole and provides layer over the substrate；
Wherein, the electronic barrier layer include p-type aluminum gallium nitride and be inserted in the p-type aluminum gallium nitride at least one
A n type gallium nitride layer, the thickness of the p-type aluminum gallium nitride are greater than the 1/2 of the thickness of the electronic barrier layer.
9. production method according to claim 8, which is characterized in that the life of n type gallium nitride layer in the electronic barrier layer
Elongate member is identical as the growth conditions of the p-type aluminum gallium nitride, and the growth conditions includes growth temperature and growth pressure.
10. manufacturing method according to claim 9, which is characterized in that the growth temperature of the electronic barrier layer is 850 DEG C
~1000 DEG C, the growth pressure of the electronic barrier layer is 100torr~500torr.
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