CN106098887A - A kind of ultraviolet epitaxial slice structure - Google Patents
A kind of ultraviolet epitaxial slice structure Download PDFInfo
- Publication number
- CN106098887A CN106098887A CN201610743837.4A CN201610743837A CN106098887A CN 106098887 A CN106098887 A CN 106098887A CN 201610743837 A CN201610743837 A CN 201610743837A CN 106098887 A CN106098887 A CN 106098887A
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- China
- Prior art keywords
- gan layer
- epitaxial
- slice structure
- layer
- epitaxial slice
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Links
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 229910002601 GaN Inorganic materials 0.000 description 39
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- 230000035882 stress Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a kind of ultraviolet epitaxial slice structure, including substrate, described substrate has sequentially generated cushion, U GaN layer, a P GaN layer, N GaN layer, luminescent layer and the 2nd P GaN layer.The ultraviolet epitaxial slice structure of the offer of the present invention, a P GaN layer is inserted between U GaN layer and N GaN layer, the excess electron in N GaN layer is absorbed by a P GaN layer, effectively control the stress problem of epitaxial process and promote carrier ability extending transversely, improve the structure of epitaxial wafer, making its processing and manufacturing more convenient, performance is more preferable.
Description
Technical field
The present invention relates to LED chip field, be specifically related to a kind of ultraviolet epitaxial slice structure.
Background technology
Gallium nitride (GaN) base semiconductor material electrical and optical properties is excellent, is especially suitable for the preparation of luminescent device.As far back as
1993, gallium nitride base blue light LED was the most successfully developed, and is widely applied.Existing gallium nitride-based epitaxial sheet includes
Sapphire Substrate, cushion, U-GaN layer, N-GaN layer, luminescent layer and P-GaN layer.
But not to bate a jot of one's demands round the temperature of high-performance gallium nitride-based epitaxial sheet research, reason is existing nitridation gallio
Epitaxial wafer still suffers from many problems, and before and after generating doped with the N-GaN layer of Si, unnecessary electronics is likely to result in lattice mismatch
With thermal stress mismatch, this meeting produce substantial amounts of defect in epitaxial film, and then to follow-up device manufacture and processing technique
Carry out causing affecting significantly, affect the manufacture of epitaxial wafer and reduce the epitaxial wafer performance after manufacturing.
Summary of the invention
In order to solve above-mentioned technical problem, it is an object of the invention to provide a kind of ultraviolet epitaxial slice structure, by N-
Insert one layer of P-GaN layer doped with Mg between GaN layer and U-GaN layer, can effectively control the stress problem of epitaxial process
With lifting carrier ability extending transversely.
The technical solution adopted in the present invention is:
A kind of ultraviolet epitaxial slice structure, including substrate, described substrate has sequentially generated cushion, U-GaN layer, a P-GaN
Layer, N-GaN layer, luminescent layer and the 2nd P-GaN layer.
Preferably, described substrate is sapphire.
The invention has the beneficial effects as follows:
Compared with existing gallium nitride-based epitaxial sheet, the ultraviolet epitaxial slice structure of the offer of the present invention, at U-GaN layer and N-GaN
Insert a P-GaN layer between Ceng, absorb the excess electron in N-GaN layer by a P-GaN layer, effectively control epitaxial growth
The stress problem of process and lifting carrier ability extending transversely, improve the structure of epitaxial wafer so that it is processing and manufacturing is more convenient, property
Can be more preferably.
Accompanying drawing explanation
For the technical scheme being illustrated more clearly that in the embodiment of the present invention, in embodiment being described below required for make
Accompanying drawing be briefly described.Obviously, described accompanying drawing is a part of embodiment of the present invention rather than all implements
Example, those skilled in the art is not on the premise of paying creative work, it is also possible to other obtained according to these accompanying drawings set
Meter scheme and accompanying drawing:
Fig. 1 is the structural representation of the epitaxial slice structure of the present invention.
Detailed description of the invention
Below with reference to embodiment and accompanying drawing, the technique effect of design, concrete structure and the generation of the present invention is carried out clearly
Chu, it is fully described by, to be completely understood by the purpose of the present invention, feature and effect.Obviously, described embodiment is this
Bright a part of embodiment rather than all embodiment, based on embodiments of the invention, those skilled in the art is not paying
Other embodiments obtained on the premise of creative work, belong to the scope of protection of the invention.
With reference to Fig. 1, the invention provides a kind of new ultra-violet epitaxial slice structure nitrogenizing gallio, including Sapphire Substrate 1,
Sequentially generate on described substrate 1 cushion 2, U-GaN layer 3, doped with a P-GaN layer 4 of Mg, N-GaN doped with Si
Layer 5, luminescent layer 6 and the 2nd P-GaN layer 7.The epitaxial slice structure of the present invention, owing to generating before N-GaN layer 5, first generates the
One P-GaN layer 4, forms hole, generates and during following process at N-GaN layer 5, and the hole of a P-GaN layer 4 can absorb
The electronics produced by N-GaN layer 5, it is to avoid existing epitaxial wafer adds the problem producing lattice mismatch man-hour with thermal stress mismatch；
And after epitaxial wafer is formed, N-GaN layer 5, luminescent layer 6 and the 2nd P-GaN layer 7 form luminous PN junction, but a P-GaN layer 4 is still
The unnecessary electronics not absorbed by the 2nd P-GaN layer 7 in absorbable N-GaN layer 5, improves the performance of epitaxial wafer.
The ultraviolet epitaxial slice structure of the offer of the present invention, inserts a P-GaN layer between U-GaN layer 3 and N-GaN layer 5
4, absorb the excess electron in N-GaN layer 5 by a P-GaN layer 4, effectively control the stress problem of epitaxial process and carry
Rising carrier ability extending transversely, improve the structure of epitaxial wafer so that it is processing and manufacturing is more convenient, performance is more preferable.
Above concrete structure and sized data are to be illustrated presently preferred embodiments of the present invention, but present invention wound
Making and be not limited to described embodiment, those of ordinary skill in the art it may also be made that kind on the premise of spirit of the present invention
The equivalent variations planted or replacement, deformation or the replacement of these equivalents are all contained in the application claim limited range.
Claims (2)
1. a ultraviolet epitaxial slice structure, including substrate (1), it is characterised in that: described substrate has sequentially generated cushion on (1)
(2), U-GaN layer (3), a P-GaN layer (4), N-GaN layer (5), luminescent layer (6) and the 2nd P-GaN layer (7).
A kind of ultraviolet epitaxial slice structure the most according to claim 1, it is characterised in that: described substrate (1) is sapphire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610743837.4A CN106098887A (en) | 2016-08-26 | 2016-08-26 | A kind of ultraviolet epitaxial slice structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610743837.4A CN106098887A (en) | 2016-08-26 | 2016-08-26 | A kind of ultraviolet epitaxial slice structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106098887A true CN106098887A (en) | 2016-11-09 |
Family
ID=57223808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610743837.4A Pending CN106098887A (en) | 2016-08-26 | 2016-08-26 | A kind of ultraviolet epitaxial slice structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106098887A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109301038A (en) * | 2018-08-16 | 2019-02-01 | 华灿光电（浙江）有限公司 | A kind of gallium nitride based LED epitaxial slice and preparation method thereof |
| CN109309150A (en) * | 2018-08-16 | 2019-02-05 | 华灿光电（浙江）有限公司 | A kind of gallium nitride based LED epitaxial slice and preparation method thereof |
| CN110581205A (en) * | 2019-08-28 | 2019-12-17 | 映瑞光电科技(上海)有限公司 | GaN-based light emitting diode epitaxial structure and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060068515A1 (en) * | 2004-09-30 | 2006-03-30 | Jinmin Li | Method for manufacturing a GaN based LED of a back hole structure |
| CN103367577A (en) * | 2013-07-25 | 2013-10-23 | 马鞍山圆融光电科技有限公司 | Epitaxial wafer of high-brightness GaN-based LED (Light Emitting Diode) and manufacturing method thereof |
| CN104201257A (en) * | 2014-09-17 | 2014-12-10 | 湘能华磊光电股份有限公司 | Method for regulating and controlling LED epitaxial wafer wavelength uniformity through buffer layer |
| CN206163512U (en) * | 2016-08-26 | 2017-05-10 | 广东德力光电有限公司 | Ultraviolet epitaxial wafer structure |
-
2016
- 2016-08-26 CN CN201610743837.4A patent/CN106098887A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060068515A1 (en) * | 2004-09-30 | 2006-03-30 | Jinmin Li | Method for manufacturing a GaN based LED of a back hole structure |
| CN103367577A (en) * | 2013-07-25 | 2013-10-23 | 马鞍山圆融光电科技有限公司 | Epitaxial wafer of high-brightness GaN-based LED (Light Emitting Diode) and manufacturing method thereof |
| CN104201257A (en) * | 2014-09-17 | 2014-12-10 | 湘能华磊光电股份有限公司 | Method for regulating and controlling LED epitaxial wafer wavelength uniformity through buffer layer |
| CN206163512U (en) * | 2016-08-26 | 2017-05-10 | 广东德力光电有限公司 | Ultraviolet epitaxial wafer structure |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109301038A (en) * | 2018-08-16 | 2019-02-01 | 华灿光电（浙江）有限公司 | A kind of gallium nitride based LED epitaxial slice and preparation method thereof |
| CN109309150A (en) * | 2018-08-16 | 2019-02-05 | 华灿光电（浙江）有限公司 | A kind of gallium nitride based LED epitaxial slice and preparation method thereof |
| CN109309150B (en) * | 2018-08-16 | 2021-10-01 | 华灿光电（浙江）有限公司 | Gallium nitride-based light emitting diode epitaxial wafer and manufacturing method thereof |
| CN110581205A (en) * | 2019-08-28 | 2019-12-17 | 映瑞光电科技(上海)有限公司 | GaN-based light emitting diode epitaxial structure and preparation method thereof |
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| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20161109 |