CN109888069B - InGaN/GaN quantum well structure and LED epitaxial wafer preparation method - Google Patents
InGaN/GaN quantum well structure and LED epitaxial wafer preparation method Download PDFInfo
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Abstract
The invention provides a preparation method of an InGaN/GaN quantum well structure and an LED epitaxial wafer, wherein the preparation method of the InGaN/GaN quantum well structure comprises the following steps: growing a GaN barrier layer; growing an InGaN well layer/GaN barrier layer alternating structure in one or more periods on the GaN barrier layer; and in the growth process of the InGaN well layer/GaN barrier layer alternating structure, introducing reaction gas containing hydrogen when growing the GaN barrier layer. The InGaN/GaN quantum well structure and the LED epitaxial wafer preparation method improve the interface steepness of the InGaN/GaN quantum well structure, improve the uniformity of In component distribution In the InGaN/GaN quantum well structure and reduce the defect density of the epitaxial layer, thereby improving the luminous efficiency of the gallium nitride-based light-emitting device.
Description
Technical Field
The invention relates to the field of preparation of gallium nitride-based light-emitting devices, in particular to an InGaN/GaN quantum well structure and a preparation method of an LED epitaxial wafer.
Background
The InGaN/GaN quantum well structure is the core of a GaN-based light emitting device. In order to make the GaN-based light emitting device have high light emitting efficiency, it is necessary to ensure that the InGaN/GaN quantum well structure has high interface steepness, high uniformity of In composition distribution therein, and low defect density of the epitaxial layer.
However, In general, due to the pulling effect, the In component tends to be distributed on the surface during the epitaxial growth process, and an In-rich layer is formed on the surface of the InGaN well layer, so that the InGaN/GaN quantum well structure has a lower interface steepness, a lower uniformity of the In component distribution therein, and a higher defect density of the epitaxial layer, which In turn affects the growth quality and the interface quality of the subsequently grown epitaxial layer, thereby seriously affecting the light emitting efficiency of the device.
Disclosure of Invention
Technical problem to be solved
In view of the above technical problems, the present invention provides an InGaN/GaN quantum well structure and a method for fabricating an LED epitaxial wafer, so as to at least partially solve the above technical problems.
(II) technical scheme
According to an aspect of the present invention, there is provided a method for fabricating an InGaN/GaN quantum well structure, comprising:
growing a GaN barrier layer;
growing an InGaN well layer/GaN barrier layer alternating structure in one or more periods on the GaN barrier layer;
and in the growth process of the InGaN well layer/GaN barrier layer alternating structure, introducing reaction gas containing hydrogen when growing the GaN barrier layer.
In some embodiments, a cap layer is grown between the InGaN well layer and the GaN barrier layer in an InGaN well layer/GaN barrier layer alternating structure.
In some embodiments, when the InGaN well layer/GaN barrier layer alternating structure is grown, the growth temperature of the GaN barrier layer and the InGaN well layer is the same and is 700-800 ℃.
In some embodiments, the duration of the hydrogen introduction is less than or equal to the growth time of the GaN barrier layer when the reaction gas containing hydrogen is introduced.
In some embodiments, when the reaction gas containing hydrogen is introduced, the flow rate of the hydrogen introduced into the reaction gas is greater than 0 and equal to or less than 50 standard ml/min.
In some embodiments, during the growth of the InGaN well layer/GaN barrier layer alternating structure, the duration and flow rate of the hydrogen gas are the same when the GaN barrier layer is grown.
The InGaN/GaN quantum well structure provided by the invention is prepared by the method.
According to another aspect of the present invention, there is provided a method for preparing an LED epitaxial wafer, the method comprising the steps of:
growing a GaN buffer layer on a substrate;
growing a high-temperature unintentionally doped GaN layer on the GaN buffer layer;
growing an n-type GaN layer on the GaN layer;
growing an InGaN/GaN quantum well light emitting layer structure on the n-type GaN layer, comprising:
growing a GaN barrier layer;
growing InGaN well layers and GaN barrier layers in one or more periods on the GaN barrier layers; and
and growing a p-type GaN layer on the InGaN/GaN quantum well light-emitting layer structure.
In some embodiments, the substrate is a sapphire substrate.
In some embodiments, the growth temperature of the GaN buffer layer is 500-550 ℃ and the growth temperature of the high temperature unintentionally doped GaN layer is 1000-1050 ℃.
In some embodiments, the thickness of the GaN buffer layer is in the range of 20-30nm, the thickness of the GaN layer is in the range of 1-2 microns, the thickness of the n-type GaN layer is in the range of 1-2 microns, and the thickness of the p-type GaN layer is in the range of 0.1-1 microns.
In some embodiments, the LED epitaxial wafer has a higher luminous efficiency in a particular wavelength range than an LED epitaxial wafer grown using a conventional method.
The LED epitaxial wafer is prepared by the method.
(III) advantageous effects
According to the technical scheme, the preparation method of the InGaN/GaN quantum well structure and the LED epitaxial wafer has one of the following beneficial effects:
(1) in the process of growing the GaN barrier layer of the InGaN/GaN quantum well structure, introducing hydrogen to etch off the In component enriched on the surface of the InGaN well layer, so that the interface abruptness of the InGaN/GaN quantum well structure is improved, the distribution uniformity of the In component In the InGaN/GaN quantum well structure is improved, the defect density of an epitaxial layer of the InGaN/GaN quantum well structure is reduced, and the light emitting efficiency of the GaN-based light emitting device is improved;
(2) the problem of enrichment of the In component on the surface of the InGaN/GaN quantum well structure is solved only by introducing hydrogen In the process of growing the GaN barrier layer of the InGaN/GaN quantum well structure and controlling the uniformity of distribution of the In component In the InGaN/GaN quantum well structure by adjusting the duration and flow of the introduced hydrogen, and the InGaN/GaN quantum well structure is simple, practical and high In operability.
Drawings
The above and other objects, features and advantages of the present disclosure will become more apparent from the accompanying drawings. Like reference numerals refer to like parts throughout the drawings, which are not intended to be drawn to scale, emphasis instead being placed upon illustrating the principles of the disclosure.
Fig. 1 is a schematic structural diagram of an InGaN/GaN quantum well structure according to an embodiment of the present invention;
fig. 2 is a flow chart of a method of fabricating each InGaN/GaN quantum well structure according to an embodiment of the invention;
fig. 3 is a schematic time diagram of hydrogen gas introduction in the case where an InGaN/GaN quantum well structure according to an embodiment of the present invention is grown within a specific temperature range;
fig. 4 is a schematic structural diagram of an LED epitaxial wafer according to an embodiment of the present invention;
fig. 5 is a flowchart of a method of fabricating an LED epitaxial wafer according to an embodiment of the present invention; and;
fig. 6 is a graph of the luminous intensity versus wavelength for green LED epitaxial wafers grown using the method of the present invention and LED epitaxial wafers grown using the conventional method (comparative wafers).
< description of reference >
401-sapphire substrate, 402-GaN buffer layer, 403-high temperature unintentionally doped GaN layer, 404-n type GaN layer, 405-InGaN/GaN quantum well light emitting layer, 406-p type GaN layer.
Detailed Description
To make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Currently, InGaN/GaN quantum well structures are the core of gallium nitride based light emitting devices. In order to make the GaN-based light-emitting device have higher light-emitting efficiency, it is necessary to ensure that the InGaN/GaN quantum well structure has higher interface steepness, higher In component distribution uniformity therein and lower epitaxial layer defect density.
However, In general, due to the pulling effect, the In component tends to be distributed on the surface during the epitaxial growth process, and an In-rich layer is formed on the surface of the InGaN well layer, so that the InGaN/GaN quantum well structure has a lower interface steepness, a lower uniformity of the In component distribution therein, and a higher defect density of the epitaxial layer, which In turn affects the growth quality and the interface quality of the subsequently grown epitaxial layer, thereby seriously affecting the light emitting efficiency of the device. Based on the InGaN/GaN quantum well structure and the LED epitaxial wafer preparation method, the interface steepness of the InGaN/GaN quantum well structure can be improved, the uniformity of In component distribution In the InGaN/GaN quantum well structure is improved, the defect density of an epitaxial layer of the InGaN/GaN quantum well structure is reduced, and therefore the light emitting efficiency of a gallium nitride-based light emitting device is improved.
For the purpose of promoting a better understanding of the objects, aspects and advantages of the present disclosure, reference is made to the following detailed description taken in conjunction with the accompanying drawings.
In one exemplary embodiment of the present invention, a method of fabricating an InGaN/GaN quantum well structure is provided.
As shown in fig. 1, fig. 1 is a schematic structural diagram of at least one InGaN/GaN quantum well structure, and each of the at least one InGaN/GaN quantum well structure may include a GaN barrier layer, an InGaN well layer, and a cap layer.
In the prior art, In the growth process of each InGaN/GaN quantum well structure of the InGaN/GaN quantum well structure, because of the pulling effect, In components tend to be distributed on the surface In the epitaxial growth process, an In-rich layer is formed on the surface of the InGaN well layer, so that the InGaN/GaN quantum well structure has lower interface steepness, lower In component distribution uniformity therein and higher epitaxial layer defect density thereof, which In turn affects the growth quality and interface quality of the next grown epitaxial layer, thereby seriously affecting the light emitting efficiency of the device.
Embodiments of the present invention improve upon the prior art by providing a flow chart of a method of fabricating each InGaN/GaN quantum well structure according to embodiments of the present invention, as shown in fig. 2. The preparation method of the InGaN/GaN quantum well structure comprises the steps of growing N InGaN/GaN quantum well structures, wherein N is more than or equal to 1 and is an integer, and the growth steps of each InGaN/GaN quantum well structure in the N InGaN/GaN quantum well structures comprise:
step 201, growing a GaN barrier layer on a preset basic structure.
In the growth process of the GaN barrier layer of each InGaN/GaN quantum well structure, as shown In fig. 3, hydrogen is introduced under the condition that the flow rates of TMGa, ammonia and nitrogen are kept unchanged (i.e., under the condition that the Ga source and the N source are both In an open state, where TMGa is the Ga source and ammonia and nitrogen are the N sources), so as to etch off the In component enriched on the surface of the InGaN well layer. Wherein the duration of the introduced hydrogen is less than or equal to the growth time of the GaN barrier layer, and the flow rate of the introduced hydrogen is more than 0 and less than or equal to 50 standard milliliters per minute.
After step 201 is completed, as shown In fig. 3, the In source that was previously In the off state is turned on, i.e., the Ga source, the In source, and the N source are all In the on state, and then step 202 is performed.
And 202, growing an InGaN well layer on the GaN barrier layer.
As shown In fig. 3, after the InGaN well layer is grown, the In source is turned off so that only the Ga source and the N source are In an on state, and then a cap layer is grown on the InGaN well layer.
Step 203, a cap layer is grown on the InGaN well layer.
The capping layer prevents In the InGaN well layer from being excessively evaporated out of the quantum well layer, and has an auxiliary effect of improving the light emitting efficiency of the light emitting component.
And in the growth process of the InGaN well layer and the cover layer of each InGaN/GaN quantum well structure, no hydrogen is introduced, and other growth parameters are unchanged compared with those of the first GaN barrier layer.
Thus, one InGaN/GaN quantum well structure is formed, and a plurality of InGaN/GaN quantum well structures can be grown according to the same method as required. Wherein, when the GaN barrier layer grows, the duration and the flow rate of the introduced hydrogen can be the same or different. According to the InGaN/GaN quantum well structure prepared by the method, hydrogen is introduced In the generation process of the GaN barrier layer to etch off the In component enriched on the surface of the InGaN well layer, so that the interface abruptness of the InGaN/GaN quantum well structure is improved, the distribution uniformity of the In component In the InGaN/GaN quantum well structure is improved, the defect density of an epitaxial layer of the InGaN/GaN quantum well structure is reduced, and the light emitting efficiency of a gallium nitride-based light emitting device is improved.
In another embodiment of the invention, a method for preparing an LED epitaxial wafer is provided. As shown in fig. 4, the LED epitaxial wafer includes, in order from bottom to top, a substrate 401, a GaN buffer layer 402, a high-temperature unintentionally doped GaN layer 403, an n-type GaN layer 404, an InGaN/GaN quantum well light emitting layer 405, and a p-type GaN layer 406. Here, when N is 1, the predetermined base structure is the N-type GaN layer 504; when N is more than or equal to 2 and is an integer, the preset basic structure of the first InGaN/GaN quantum well structure is the N-type GaN layer 504, and the preset basic structure from the second InGaN/GaN quantum well structure to the Nth InGaN/GaN quantum well structure is the previous InGaN/GaN quantum well structure.
Further, fig. 5 shows a flowchart of a method for preparing an LED epitaxial wafer according to an embodiment of the present invention. As shown in fig. 5, the method for preparing the LED epitaxial wafer includes the steps of: step 501, growing a GaN buffer layer 402 on a substrate 401; step 502, growing a high-temperature unintentionally doped GaN layer 403 on the GaN buffer layer 402; step 503, growing an n-type GaN layer 404 on the high-temperature unintentionally doped GaN layer 403; step 504, growing an InGaN/GaN quantum well light emitting layer 405 on the n-type GaN layer 404; and step 505, growing a p-type GaN layer 406 on the InGaN/GaN quantum well light emitting layer 405.
Therein, in step 504, the InGaN/GaN quantum well light emitting layer 405 is grown in accordance with the manner described in fig. 2.
Preferably, the substrate 401 is a sapphire substrate.
Preferably, the growth temperature of the GaN buffer layer is 500 to 550 ℃, and the growth temperature of the GaN layer grown on the GaN buffer layer is 1000 to 1050 ℃.
Preferably, the thickness of the GaN buffer layer 402 is in the range of 20-30nm, the thickness of the GaN layer 403 is in the range of 1-2 microns, and the thickness of the p-type GaN layer 406 is in the range of 0.1-1 micron.
Fig. 6 is a graph of the luminous intensity versus wavelength for green LED epitaxial wafers grown using the method of the present invention and LED epitaxial wafers grown using the conventional method (comparative wafers).
As shown In fig. 6, In the process of changing the wavelength from 400nm to 650nm, the luminous intensity of the green LED epitaxial wafer grown by the method of the present invention is significantly higher In the wavelength range of 475nm to 525nm compared to the LED epitaxial wafer (comparative wafer) grown by the conventional method, and especially, at the wavelength of 500nm, the luminous intensity of the green LED epitaxial wafer grown by the method of the present invention reaches the peak value compared to the LED epitaxial wafer (comparative wafer) grown by the conventional method, which shows that the InGaN/GaN quantum well structure grown by the method of the present invention can improve the interface steepness thereof, improve the uniformity of the distribution of In components therein and reduce the defect density of the epitaxial layer thereof, thereby improving the luminous efficiency of the gallium nitride-based light emitting device.
While the above embodiments set forth numerous details, such details should not be construed as limitations on the scope of the claimed invention or of what may be claimed, but merely as descriptions of features specific to particular embodiments.
In summary, In the growth process of the GaN barrier layer of each InGaN/GaN quantum well structure In the plurality of InGaN/GaN quantum well structures prepared according to the method of the present invention, hydrogen is introduced under the condition that the TMGa, ammonia and nitrogen flow rates are kept unchanged to etch off the In component enriched on the surface of the InGaN/GaN quantum well structure, and no hydrogen is introduced In the growth process of the InGaN well layer and the cap layer, while other growth parameters are unchanged, so that the problem of In component enrichment on the surface of the InGaN well layer is solved, the interface steepness of the InGaN/GaN quantum well structure is improved, the uniformity of In component distribution is improved, and the defect density of the epitaxial layer is reduced, thereby achieving the effect of improving the light emitting efficiency of the GaN-based light emitting device.
So far, the embodiments of the present disclosure have been described in detail with reference to the accompanying drawings. From the above description, those skilled in the art should clearly recognize the present disclosure. It is worthy to note, however, that any particular value in all examples shown and described herein is to be construed as merely illustrative, and not a limitation, such that other examples of the illustrative embodiments may have different values.
It is to be noted that, in the attached drawings or in the description, the implementation modes not shown or described are all the modes known by the ordinary skilled person in the field of technology, and are not described in detail. In addition, the definitions of the elements are not limited to the specific structures, shapes or modes mentioned in the embodiments, and those skilled in the art may easily modify or replace them.
Similarly, it should be appreciated that in the foregoing description of exemplary embodiments of the disclosure, various features of the disclosure are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various disclosed aspects. However, the disclosed method should not be interpreted as reflecting an intention that: that is, the claimed disclosure requires more features than are expressly recited in each claim. Rather, as the following claims reflect, disclosed aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this disclosure.
The above-mentioned embodiments are intended to illustrate the objects, aspects and advantages of the present disclosure in further detail, and it should be understood that the above-mentioned embodiments are only illustrative of the present disclosure and are not intended to limit the present disclosure, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.
Claims (10)
1. A preparation method of an InGaN/GaN quantum well structure comprises the following steps:
growing a GaN barrier layer;
growing an InGaN well layer/GaN barrier layer alternating structure for one or more periods on the GaN barrier layer;
in the growth process of the InGaN well layer/GaN barrier layer alternating structure, introducing reaction gas containing hydrogen under the condition that the flow rates of TMGa, ammonia and nitrogen are kept unchanged when the GaN barrier layer grows;
when the alternating structure of each InGaN well layer/GaN barrier layer grows, the growth temperature of the GaN barrier layer is the same as that of the InGaN well layer;
when the reaction gas containing hydrogen is introduced, the duration time of the introduced hydrogen is less than or equal to the growth time of the GaN barrier layer, and the flow rate of the introduced hydrogen in the reaction gas is more than 0 and less than or equal to 50 standard milliliters per minute;
in the growth process of the InGaN well layer/GaN barrier layer alternating structure, the duration and the flow of the introduced hydrogen are the same when the GaN barrier layer grows.
2. The method of claim 1, wherein a cap layer is grown between the InGaN well layer and the GaN barrier layer in an alternating InGaN well layer/GaN barrier layer structure.
3. The method of claim 1, wherein the growth temperature of the GaN barrier layer and the InGaN well layer is 700-800 ℃ during the growth of the InGaN well layer/GaN barrier layer alternating structure.
4. An InGaN/GaN quantum well structure prepared by the method of any of claims 1-3.
5. A preparation method of an LED epitaxial wafer is characterized by comprising the following steps:
growing a GaN buffer layer on a substrate;
growing a high-temperature unintentionally doped GaN layer on the GaN buffer layer;
growing an n-type GaN layer on the high-temperature unintentionally doped GaN layer;
growing an InGaN/GaN quantum well light emitting layer structure on the n-type GaN layer, comprising:
growing a GaN barrier layer;
growing InGaN well layers and GaN barrier layers in one or more periods on the GaN barrier layers; and
growing a p-type GaN layer on the InGaN/GaN quantum well light-emitting layer structure;
in the growth process of the GaN barrier layer of each InGaN/GaN quantum well structure, introducing reaction gas containing hydrogen under the condition that the flow rates of TMGa, ammonia gas and nitrogen gas are kept unchanged;
when the reaction gas containing hydrogen is introduced, the duration time of the introduced hydrogen is less than or equal to the growth time of the GaN barrier layer, and the flow rate of the introduced hydrogen in the reaction gas is more than 0 and less than or equal to 50 standard milliliters per minute;
in the growth process of the InGaN well layer/GaN barrier layer alternating structure, the duration and the flow of the introduced hydrogen are the same when the GaN barrier layer grows.
6. The method for producing an LED epitaxial wafer according to claim 5, wherein the substrate is a sapphire substrate.
7. The method for producing an LED epitaxial wafer according to claim 5, wherein the growth temperature of the GaN buffer layer is 500-550 ℃, and the growth temperature of the n-type GaN layer is 1000-1050 ℃.
8. The method of manufacturing an LED epitaxial wafer according to claim 5, wherein the thickness of the GaN buffer layer is in the range of 20-30nm, the thickness of the high-temperature unintentionally doped GaN layer is in the range of 1-2 microns, and the thickness of the p-type GaN layer is in the range of 0.1-1 micron.
9. The method for preparing the LED epitaxial wafer according to claim 5, wherein the LED epitaxial wafer has higher luminous efficiency in a wavelength range of 475-525nm than an LED epitaxial wafer grown by a conventional method.
10. An LED epitaxial wafer prepared by the method of any one of claims 5 to 9.
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