CN103996769A - LED epitaxial layer structure, growing method of LED epitaxial layer structure and LED chip with the LED epitaxial layer structure - Google Patents

LED epitaxial layer structure, growing method of LED epitaxial layer structure and LED chip with the LED epitaxial layer structure Download PDF

Info

Publication number
CN103996769A
CN103996769A CN201410249647.8A CN201410249647A CN103996769A CN 103996769 A CN103996769 A CN 103996769A CN 201410249647 A CN201410249647 A CN 201410249647A CN 103996769 A CN103996769 A CN 103996769A
Authority
CN
China
Prior art keywords
layer
led epitaxial
superlattice
quantum well
multiple quantum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201410249647.8A
Other languages
Chinese (zh)
Other versions
CN103996769B (en
Inventor
农明涛
杨云峰
朱耀强
项博媛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xiangneng Hualei Optoelectrical Co Ltd
Original Assignee
Xiangneng Hualei Optoelectrical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xiangneng Hualei Optoelectrical Co Ltd filed Critical Xiangneng Hualei Optoelectrical Co Ltd
Priority to CN201410249647.8A priority Critical patent/CN103996769B/en
Publication of CN103996769A publication Critical patent/CN103996769A/en
Application granted granted Critical
Publication of CN103996769B publication Critical patent/CN103996769B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)

Abstract

The invention provides an LED epitaxial layer structure, a growing method of the LED epitaxial layer structure and an LED chip with the LED epitaxial layer structure. The LED epitaxial layer structure comprises a multiple quantum well area and a P-AlGaN layer which are overlaid in sequence. The LED epitaxial layer structure further comprises a transition layer, wherein the transition layer is arranged between the multiple quantum well area and the P-AlGaN layer, and the transition layer is an AlInGaN layer or is of an AlGaN/InGaN superlattice structure. According to the LED epitaxial layer structure, the AlInGaN layer or the AlGaN/InGaN superlattice structure is additionally arranged between the P-AlGaN layer and the multiple quantum well layer, lattice mismatch between the multiple quantum well layer and the P-AlGaN layer can be reduced, dislocation and defects formed on the P-AlGaN layer are reduced, Al or Mg in other layers is effectively prevented from diffusing to the multiple quantum well area, and therefore the light-emitting efficiency of the LED chip is improved by 4%.

Description

LED epitaxial layer structure, growing method and there is the LED chip of this structure
Technical field
The present invention relates to LED (light-emitting diode) luminescent device field, especially, relate to a kind of LED epitaxial layer structure, growing method and there is the LED chip of this structure.
Background technology
The GaN semi-conducting material of broad-band gap has good chemical stability, thermal stability and higher puncture voltage, is the third generation novel semiconductor material after first generation silicon materials and second generation GaAs material.Its ternary alloy three-partalloy indium gallium nitrogen (In xga (1-x)n) band gap is adjustable continuously from 0.7eV to 3.4eV, and emission wavelength has covered the region of visible ray and black light.Be considered to manufacture the ideal material of high brightness blue, green light-emitting diode and white light emitting diode, be now widely used in the fields such as illumination, display screen, backlight, signal lamp.
In the emitting led structure of InGaN/GaN base, as shown in Figure 1, comprise stacked successively substrate 1 ', GaN nucleating layer 2 ', non-doping uGaN resilient coating 3 ', nGaN layer 4 ', first mix In trap layer 5 ', second mix In trap layer 6 ', P type AlGaN layer 7 ', P type GaN layer 8 ' and mix Mg ohmic contact layer 9 '.One side of this epitaxial layer structure from the end face of this epitaxial layer structure be etched to nGaN layer 4 '.Multiple Quantum Well region in this epitaxial layer structure comprise first mix In trap layer 5 ', second mix In trap layer 6 ', the luminous efficiency of lifting LED chip that can appropriateness.
P-AlGaN layer 7 ' be conventionally inserted into Multiple Quantum Well region and P layer GaN layer 8 ' between, as electronic barrier layer, electronics is strapped in quantum well region.Make LED chip in the time passing to large electric current, electronic energy few Multiple Quantum Well region of overflowing of trying one's best, effectively reduces droop effect.But due to AlGaN and Multiple Quantum Well region lattice mismatch, thereby affect the luminous efficiency of LED chip.
Summary of the invention
The LED chip that the object of the invention is to provide a kind of LED epitaxial layer structure, growing method and has this structure, to solve in prior art the low technical problem of luminous efficiency in LED epitaxial layer structure.
For achieving the above object, according to an aspect of the present invention, a kind of LED epitaxial layer structure is provided, comprise multiquantum well region and be arranged at the P type AlGaN layer on multiquantum well region end face, also comprise transition zone, transition zone is arranged between multiquantum well region and P type AlGaN layer, and transition zone is AIInGaN layer or AlGaN/InGaN superlattice structure.
Further, transition zone is AlGaN/InGaN superlattice structure.
Further, AlGaN/InGaN superlattice structure comprises multiple stacked superlattice unit successively, and superlattice unit comprises successively stacked superlattice In xga (1-x)n layer and superlattice Al yga (1-y)n layer, superlattice In xga (1-x)the thickness of N layer is 1～3nm, superlattice Al yga (1-y)the thickness of N layer is 1～3nm, and superlattice unit number is 4～6, superlattice In xga (1-x)x=0.05～0.15 in N layer, superlattice Al yga (1-y)y=0.05～0.15 in N layer.
Further, AIInGaN layer is Al yin xga (1-x-y)n, wherein, x=0.05～0.15, y=0.05～0.15, AlInGaN layer thickness is 6～18nm.
Further, the thickness of P type AlGaN layer is 20～30nm.
Further, multiquantum well region comprises the first stacked successively multiple quantum well layer and the second multiple quantum well layer, and the first multiple quantum well layer comprises multiple stacked first modules successively, and first module comprises a stacked successively GaN layer and an In xga (1-x)n layer, an In xga (1-x)x=0.05～0.08 in N layer, the thickness of a GaN layer is 30～50nm, an In xga (1-x)the thickness of N layer is 1～3nm, and first module number is 3～4.
Further, the second multiple quantum well layer comprises multiple stacked second units successively, and second unit comprises the 2nd stacked successively In xga (1-x)n layer and the 2nd GaN layer, the 2nd In xga (1-x)n layer thickness is 1～4nm, the 2nd In xga (1-x)x=0.20～0.21 in N layer, the 2nd GaN layer thickness is 10～14nm, second unit number is 12～14.
A kind of growing method of LED epitaxial layer structure described above is also provided according to a further aspect in the invention, comprise the step of producing multiquantum well region and being arranged at the P type AlGaN layer on multiquantum well region end face, also be included in the step of the transition zone of growing between multiquantum well region and P type AlGaN layer, wherein, in the step of growth transition zone, growth temperature is 800～840 DEG C, and growth pressure is 200～600mbar.
Further, the growth temperature of growing P-type AlGaN layer is 930～950 DEG C; The step of growth multiquantum well region comprises growth stacked the first multiple quantum well layer and the second multiple quantum well layer successively, and the growth temperature of growth the first multiple quantum well layer is 700～900 DEG C; The step of the second multiple quantum well layer of growing comprises the multiple steps of stacked second unit successively of growth, and the step of growth second unit comprises growth stacked the 2nd In successively xga (1-x)the step of N layer and the 2nd GaN layer, growth the 2nd In xga (1-x)in the step of N layer, growth temperature is 700～800 DEG C; In the step of the 2nd GaN layer of growing, growth temperature is 800～900 DEG C.
A kind of LED chip is also provided according to a further aspect in the invention, comprise LED epitaxial loayer, LED epitaxial loayer has as any one LED epitaxial layer structure in claim 1～7, preferably LED chip brightness under 350mA drive current is 228～230mW, and preferably LED chip brightness under 20mA drive current is 17.4～17.6mW.
The present invention has following beneficial effect:
In LED epitaxial layer structure provided by the invention, between P type-AlGaN and multiple quantum well layer, set up AlInGaN or AlGaN/InGaN superlattice structure, can reduce the lattice mismatch of quantum well layer and P-AlGaN layer, be reduced in dislocation and defect that P-AlGaN layer forms, effectively stop Al or Mg in other layers to spread to Multiple Quantum Well region, thereby improve the luminous efficiency 4% of LED chip.Especially can tolerate large electric current (350mA).
Except object described above, feature and advantage, the present invention also has other object, feature and advantage.Below with reference to figure, the present invention is further detailed explanation.
Brief description of the drawings
The accompanying drawing that forms the application's a part is used to provide a further understanding of the present invention, and schematic description and description of the present invention is used for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 is LED epitaxial layer structure schematic diagram in prior art;
Fig. 2 is the LED epitaxial layer structure schematic diagram of the preferred embodiment of the present invention;
Fig. 3 is Multiple Quantum Well region Al and Mg diffusion sims (Secondary Ion Mass Spectrometry, the secondary ion mass spectroscopy analysis) figure of comparative example 1;
Fig. 4 is Multiple Quantum Well region Al and the Mg diffusion SIMS figure of the preferred embodiment of the present invention;
Fig. 5 is the 28*28mil of the preferred embodiment of the present invention 2lED chip is brightness contrast schematic diagram under the effect of 350mA drive current; And
Fig. 6 is the 08*10mil of the preferred embodiment of the present invention 2lED chip is brightness contrast schematic diagram under the effect of 20mA drive current.
Embodiment
Below in conjunction with accompanying drawing, embodiments of the invention are elaborated, but the multitude of different ways that the present invention can be defined by the claims and cover is implemented.
LED epitaxial layer structure provided by the invention by plugging transition zone between multiquantum well region and P type AlGaN layer, thereby a large amount of defects and dislocation that the P type AlGaN layer causing is introduced in growth course are reduced due to the lattice mismatch between P type AlGaN layer and multiple quantum well layer.Thereby stable performance and the luminous efficiency of the LED chip that contains this LED epitaxial layer structure are improved.
One aspect of the present invention provides a kind of LED epitaxial layer structure, this LED epitaxial layer structure comprise stacked successively multiquantum well region and P type AlGaN layer and be arranged at multiquantum well region and P type AlGaN layer between transition zone, transition zone is AlInGaN layer or AlGaN/InGaN superlattice structure.
As shown in Figure 2, LED epitaxial layer structure provided by the invention comprises stacked successively substrate 1, non-doping uGaN resilient coating 2, nGaN layer 3, the first multiple quantum well layer 4, the second multiple quantum well layer 5, transition zone 6, P type AlGaN layer 7, P type GaN layer 8 and ohmic contact layer 9.Substrate 1 used is (0001) sapphire (Al 2o 3) substrate, can be also other conventional substrates, as Si, SiC etc.One side of this epitaxial layer structure is etched to nGaN layer 4 from the end face of this epitaxial layer structure.
Transition zone is AlInGaN layer or AlGaN/InGaN superlattice structure.Adopt these two kinds of structures all can obtain following effect.
The size of microcrystal of InGaN in multiquantum well region is large, and the surface microstructure particle diameter that AlGaN in P type AlGaN layer forms is less.In the time that the InGaN in multiquantum well region arranges P type AlGaN layer from the teeth outwards, the two cannot exact matching, causes very large lattice mismatch.Make P type AlGaN layer in growth course, introduce a large amount of defects and dislocation.The LED luminescent device of LED epitaxial layer structure that has this structure when employing is under larger drive current drives, defect and dislocation that electronics is easy to by having formed overflow in P type GaN layer, non-radiative compound with the hole generation in this becomes, thus reduce the luminous efficiency of LED device and cause the unstable of electrical property.
And by being set, can reduce transition zone the lattice mismatch of multiquantum well region and P type AlGaN layer, and then the dislocation forming in reduction P type AlGaN layer growth process and the quantity of defect, thereby effectively stop P type AlGaN layer by layer with the Al that adulterates in upper strata and Mg element to the concentration in the degree of depth and the multiquantum well region of multiquantum well region diffusion, thereby reduce the non-radiative compound occurrence probability of multiquantum well region, improve the luminous efficiency in volume subarea.Referring to Fig. 3, in Fig. 3, abscissa represents the degree of depth of LED epitaxial loayer.The degree of depth is 0 to be the surface of LED epitaxial layer structure.The degree of depth is the multiquantum well region in the corresponding LED epitaxial layer structure in 0.2～0.4 μ m region.The degree of depth is that 0.6 μ m is the N-type GaN layer of mixing Si.Ordinate is the concentration of Al corresponding to respective depth, Mg and In element.Meaning horizontal in Fig. 4, that ordinate is represented is identical with Fig. 3.
As shown in Figure 3, in multiquantum well region, the concentration of diffusion concentration Al element in the LED epitaxial layer structure that transition zone is not set of Al, Mg and In element is from entering multiquantum well region, Al concentration of element is that 7E18 successively decreases gradually, until the concentration of Multiple Quantum Well end of extent Al still reaches 1E17.The concentration of Mg element is from multiquantum well region, and Mg concentration of element is 2E18, successively decreases gradually, until the concentration of Multiple Quantum Well end of extent Mg still reaches 5E16.Be illustrated as when transition zone is set, Al and Mg element in whole multiquantum well region always in higher concentration.
Known in Fig. 4, Al element starts diffusion from 1E18 in multiquantum well region, and concentration is successively decreased, and while arriving multiquantum well region border, Al concentration of element is only 1E16.Mg element starts diffusion at multiquantum well region from 1E18, and concentration is successively decreased, and while reaching multiquantum well region border, Mg concentration of element is only 1E16.And in whole multiquantum well region, Al and Mg Elements Diffusion concentration decline rapidly, illustrate that the Al in LED epitaxial layer structure and Mg can receive stopping of transition zone by arranging after transition zone, and can after multiquantum well region, still not maintain higher concentration entering.Fig. 4 also illustrates simultaneously, and due to the existence of transition zone, Al and Mg can not continually enter in multiquantum well region, thereby have effectively stopped the diffusion of Al and Mg.
AIInGaN layer is Al yin xga (1-x-y)n, x=0.05～0.15 of AlInGaN layer, y=0.05～0.15.AlInGaN layer only needs can realize docking of transition zone and P type AlGaN layer and multiquantum well region by one deck structure simultaneously.Make the transition zone can be with multiquantum well region to mating and can matching with P type AlGaN layer.Thereby go up defect and the too much problem of dislocation for this layer while having avoided growing P-type AlGaN layer.
Preferred transition zone used is AlGaN/InGaN superlattice structure.Adopt AlGaN/InGaN superlattice structure.Can better bring into play the diffusion barrier effect to Al and Mg as transition zone, thereby better improve the luminous efficiency of gained LED chip.Adopt AlGaN/InGaN superlattice structure as transition zone, can make obtained LED chip under 350mA current drives, can effectively stop that Al, Mg element overflow in P type GaN layer by defect and dislocation non-radiative compound with hole generation, and then ensure luminous efficiency and the electric performance stablity of LED device.
AlGaN/InGaN superlattice structure comprises multiple stacked superlattice unit successively, and superlattice unit comprises successively stacked superlattice In xga (1-x)n layer and superlattice AlyGa (1-y)n layer, superlattice In xga (1-x)the thickness of N layer is 1～3nm, superlattice AlyGa (1-y)the thickness of N layer is 1～3nm, superlattice In xga (1-x)x=0.05～0.15 in N layer.Superlattice Al yga (1-y)y=0.05～0.15 in N layer.The stacked formation superlattice structure in multiple superlattice unit in AlGaN/InGaN superlattice structure.When using AlGaN/InGaN superlattice structure as transition zone, superlattice In xga (1-x)n layer growth is on multiquantum well region end face.The superlattice unit number of AlGaN/InGaN superlattice structure can be conventional number, is preferably 4～6.Superlattice InxGa in this superlattice structure (1-x)when the thickness of N layer is 1～3nm, coordinating upper thickness is 1～3nm superlattice Al yga (1-y)n layer and superlattice unit periodicity can prevent the effect of blocking of the light sending due to the multiquantum well region that transition bed thickness causes.Thereby be conducive to improve the luminous efficiency of LED chip most.Superlattice In xga (1-x)x=0.05～0.15 in N layer can prevent that the bright dipping of the luminous LED of the causing device of transition zone is impure, causes the generation of veiling glare.Superlattice Al yga (1-y)in N layer, y=0.05～0.15 can prevent that the doping of Al from producing transitional function between multiquantum well region and P type AlGaN layer.Thereby make transition zone can better prevent that Al and Mg element from occurring excessive by dislocation and defect.
In the time that transition zone is AlInGaN layer, AlInGaN layer thickness can be the thickness in conventional LED epitaxial layer structure middle level.Preferably the thickness of AlInGaN layer is 6～18nm.Now can ensure that defects count and number of dislocations in AIInGaN layer are lower, prevent Al and Mg Elements Diffusion that transition zone causes.
P type AlGaN layer can be conventional thickness, and preferably the thickness of P type AlGaN layer is 20～30nm.Now coordinate transition zone to use and can effectively improve the barrier effect of transition zone to Al and Mg element, thereby obtain the optimum luminous efficiency of sending out.
Multiquantum well region is the multiple quantum well layer setting in LED epitaxial layer structure routinely.Preferably multiquantum well region comprises the first stacked successively multiple quantum well layer and the second multiple quantum well layer, and the first multiple quantum well layer comprises multiple stacked first modules successively, and first module comprises a stacked successively GaN layer and an In xga (1-x)n layer, the thickness of a GaN layer is 30～50nm, an In xga (1-x)the thickness of N layer is 1～3nm, an In xga (1-x)x=0.05～0.08 in N layer, first module number is 3～4.The first multiple quantum well layer is exactly the Multiple Quantum Well stress release layer of high growth temperature.
Preferably the second multiple quantum well layer comprises multiple stacked second units successively, and second unit comprises the 2nd stacked successively In xga (1-x)n layer and the 2nd GaN layer, the 2nd In xga (1-x)n layer thickness is 1～4nm, the 2nd In xga (1-x)x=0.20～0.21 in N layer, the 2nd GaN layer thickness is 10～14nm, second unit number is 12～14.The second multiple quantum well layer refers to multiple quantum well light emitting layer.
Adopt multiquantum well region the first multiple quantum well layer and the second multiple quantum well layer structure can further reduce the lattice mismatch of InGaN in N-type GaN and luminous zone, reduce stress, effectively repair quantum well and can be with distribution, improve the luminous radiation in electronics and hole.The first multiple quantum well layer and the second multiple quantum well layer are grown by above-mentioned parameter respectively, can improve the luminous efficiency of gained LED epitaxial loayer, improve electronics and inanition effective combined efficiency in multiquantum well region, simultaneously in conjunction with the barrier effect of transition zone, thereby effectively improve the luminous efficiency of gained LED chip.Preferably in the first multiple quantum well layer, a GaN layer thickness is 40nm, an In xga (1～x)n layer thickness is 2nm.Preferably first module book is 3.By this condition first multiple quantum well layer luminous efficiency effect optimum of growing.
Preferably the 2nd In in the second multiple quantum well layer xga (1～x)n layer thickness is 3nm, and the 2nd GaN layer thickness is 12nm, and second unit number is 13, and now the second multiple quantum well layer luminous efficiency optimum simultaneously stops Al, Mg effect optimum for what coordinate transition zone.
Another aspect of the present invention also provides the growing method of above-mentioned LED epitaxial layer structure to comprise the following steps: the growth temperature of transition zone is 800～840 DEG C, and growth pressure is 200～600mbar.
The growth of transition zone can adopt conventional growth conditions to obtain.Can pass into according to a conventional method corresponding doped chemical and contain gallium element, Nitrogen element and look next life containing In element.Preferably the growth temperature of transition zone is 800～840 DEG C, and growth pressure is 200～600mbar.At this condition transition zone of growing, can improve the crystalline quality on gained transition zone surface, thereby improve gained transition zone to Al and Mg element barrier effect.By this condition growth, the transitional function of transition zone and multiquantum well region and P type AlGaN layer be can also improve simultaneously, a large amount of defects of formation and dislocation in P type AlGaN layer avoided.Further strengthen the barrier effect of gained transition zone to Al and Mg element.More preferably growth pressure is 400～600mbar.The density of gained rete of growing under this pressure condition is the most applicable.
Preferably the growth temperature of P type AlGaN layer is 930～950 DEG C; The growth temperature of the first multiple quantum well layer is 700～900 DEG C; The 2nd In xga (1-x)the growth temperature of N layer is 700～800 DEG C; The growth temperature of the 2nd GaN layer is 800～900 DEG C.More preferably the first Multiple Quantum Well layer growth temperature is 800 DEG C, and the growth temperature of the second multiple quantum well layer is 750 DEG C.Now gained multiquantum well region density and luminous efficiency optimum.
P type AlGaN layer and multiquantum well region can be grown by this conventional method.Preferably, by above-mentioned condition growth, can improve the matching degree of gained transition zone and multiquantum well region and P type AlGaN layer, thereby further dwindle dislocation and the defect of gained P type AlGaN layer.
It is 228～230mW that another aspect of the present invention also provides brightness under a kind of LED chip 350mA drive current with above-mentioned LED epitaxial layer structure, and preferably LED chip brightness under 20mA drive current is 17.4～17.6mW.
LED epitaxial loayer preparation method of the present invention is described as follows: adopt Aixtron Cmis I MOCVD (metallo-organic compound chemical vapour deposition technique) growth to have the LED epitaxial wafer of said structure.Adopt high-purity H 2or high-purity N 2or high-purity H 2and high-purity N 2mist as carrier gas, high-purity N H 3as N source, metal organic source trimethyl gallium (TMGa), triethyl-gallium are as gallium (TEGa) source, and trimethyl indium (TMIn) is as indium source, and N-type dopant is silane (SiH 4), P type dopant is two luxuriant magnesium (CP2Mg), and substrate is (0001) surface sapphire, and reaction pressure is 100mbar～800mbar.Comprise the following steps:
1, high-temperature process Sapphire Substrate 5～6 minutes under the hydrogen atmosphere of 1000～1100 DEG C;
2, be cooled at 500～550 DEG C the low temperature buffer layer GaN that is 30～40nm at Grown on Sapphire Substrates thickness (Nucleation);
3, increase the temperature at 1000～1100 DEG C, continue the GaN that undopes of growth 1～2.5um, as u-shaped GaN layer;
4, the N-shaped that continues again growth 2～4um is mixed the GaN of Si, as Doped n-type GaN layer;
5, temperature drops to mixing after In high temperature Multiple Quantum Well stress release layer of 800 DEG C of lasting growth 160nm, and adopting a GaN layer thickness is 40nm, an In xga (1～x)n layer thickness is 2nm (x=0.05～0.08), and first module number is 3, and growth is as the first multiple quantum well layer;
6, the growth layer MQW that have chance with periodically, 750 DEG C of grow doping In growth the 2nd In xga (1～x)n layer, thickness is 3nm, x=0.20～0.21,840 DEG C of the 2nd GaN layers that growth thickness is 12nm, In xga (1～x)n/GaN second unit number is 13, as the second multiple quantum well layer;
7, temperature is raised to 800～840 DEG C, and pressure maintains 400～600mbar, the Al that the thickness of grow doping In and Al is 6～18nm yin xga (1-x-y)n or In xga (1-x)n/Al yga (1-y)superlattice structure (superlattice In xga (1-x) N layer and superlattice Al yga (1-y)the thickness of N layer is 1～3nm, and superlattice number of unit is 4～6), as transition zone.
8, increase the temperature to again 930～950 DEG C continue growth 20～30nm mix magnesium GaN as P type AlGaN layer;
9, increase the temperature to again 950～980 DEG C continue growth 0.15～0.20um mix magnesium GaN as P type GaN layer;
10, the low temperature of 5～10nm of growing while reducing the temperature to again 650～680 DEG C is mixed magnesium InGaN as ohmic contact layer;
11, reduce the temperature to again 700～750 DEG C, under nitrogen atmosphere, 20～30 minutes duration, activate PGaN, obtain having the LED epitaxial wafer of above-mentioned LED epitaxial layer structure.
Embodiment
Material used and equipment and instrument are commercially available below.
Gained LED epitaxial wafer in following examples and comparative example is prepared to LED chip according to a conventional method.LED chip specification is 08*10mil 2and 28*28mil 2.
Adopt Aixtron Cmis I MOCVD (metallo-organic compound chemical vapour deposition technique) growth to there is the LED epitaxial wafer of said structure.Adopt high-purity H 2or high-purity N 2or high-purity H 2and high-purity N 2mist as carrier gas, high-purity N H 3as N source, metal organic source trimethyl gallium (TMGa), triethyl-gallium are as gallium (TEGa) source, and trimethyl indium (TMIn) is as indium source, and N-type dopant is silane (SiH 4), P type dopant is two luxuriant magnesium (CP2Mg), substrate is (0001) surface sapphire, reaction pressure at 100mbar between 800mbar.
Embodiment 1
1, high-temperature process Sapphire Substrate 5 minutes under the hydrogen atmosphere of 1000 DEG C;
2, be cooled at 500 DEG C the low temperature buffer layer GaN that is 30nm at Grown on Sapphire Substrates thickness;
3, increase the temperature at 1000 DEG C, continue the GaN that undopes of growth 1um, as u-shaped GaN layer;
4, the N-shaped that continues again growth 2um is mixed the GaN of Si, as Doped n-type GaN layer;
5, temperature drops to mixing after In high temperature Multiple Quantum Well stress release layer of 800 DEG C of lasting growth 160nm, and adopting a GaN layer thickness is 40nm, an In xga (1～x)n layer thickness is 2nm (x=0.05), and first module number is 3, and growth is as the first multiple quantum well layer;
6, the growth layer MQW that have chance with periodically, 750 DEG C of grow doping In growth the 2nd In xga (1-x)n layer (x=0.20), thickness is 3nm, 840 DEG C of the 2nd GaN layers that growth thickness is 12nm, In xga (1-x)n/GaN second unit number is 13, as the second multiple quantum well layer;
7, temperature is raised to 800 DEG C, and pressure maintains 400mbar, the Al that the thickness of grow doping In and Al is 6nm yin xga (1-x-y)n (x=0.05～0.15, y=0.05～0.15), as transition zone.
8, increase the temperature to again 930 DEG C continue growth 20nm mix magnesium GaN as P type AlGaN layer;
9, increase the temperature to again 950 DEG C continue growth 0.15um mix magnesium GaN as P type GaN layer;
10, the low temperature of 5nm of growing while reducing the temperature to again 650 DEG C is mixed magnesium InGaN as ohmic contact layer;
11, reduce the temperature to again 700 DEG C, under nitrogen atmosphere, 20 minutes duration, activate PGaN, obtain having the LED epitaxial wafer 1 of above-mentioned LED epitaxial layer structure.
Embodiment 2
1, high-temperature process Sapphire Substrate 6 minutes under the hydrogen atmosphere of 1100 DEG C;
2, be cooled at 550 DEG C the low temperature buffer layer GaN that is 40nm at Grown on Sapphire Substrates thickness (Nucleation);
3, increase the temperature at 1100 DEG C, continue the GaN that undopes of growth 2.5um, as u-shaped GaN layer;
4, the N-shaped that continues again growth 4um is mixed the GaN of Si, as Doped n-type GaN layer;
5, temperature drops to mixing after In high temperature Multiple Quantum Well stress release layer of 800 DEG C of lasting growth 160nm, and adopting a GaN layer thickness is 40nm, an In xga (1～x)n layer thickness is 2nm (x=0.08), and first module number is 3, and growth is as the first multiple quantum well layer;
6, the growth layer MQW that have chance with periodically, 750 DEG C of grow doping In growth the 2nd In xga (1～x)n layer (x=0.21), thickness is 3nm, 840 DEG C of the 2nd GaN layers that growth thickness is 12nm, In xga (1～x)n/GaN second unit number is 13, as the second multiple quantum well layer;
7, temperature is raised to 840 DEG C, and pressure maintains 600mbar, the In of grow doping In and Al xga (1～x)n/Al yga (1～y)superlattice structure (superlattice In xga (1～x)n layer and superlattice Al yga (1～y)the thickness of N layer is 3nm, and superlattice number of unit is 6, superlattice In xga (1-x)x=0.15 in N layer, superlattice Al yga (1-y)y=0.15 in N layer), as transition zone.
8, increase the temperature to again 950 DEG C continue growth 30nm mix magnesium GaN as P type AlGaN layer;
9, increase the temperature to again 980 DEG C continue growth 0.20um mix magnesium GaN as P type GaN layer;
10, the low temperature of 10nm of growing while reducing the temperature to again 680 DEG C is mixed magnesium InGaN as ohmic contact layer;
11, reduce the temperature to again 750 DEG C, under nitrogen atmosphere, 30 minutes duration, activate PGaN, obtain having the LED epitaxial wafer 2 of above-mentioned LED epitaxial layer structure.
Embodiment 3
Be with the difference of embodiment 1:
Step 5, temperature drop to mixing after In high temperature Multiple Quantum Well stress release layer of 700 DEG C of lasting growth 160nm, and adopting a GaN layer thickness is 30nm, an In xga (1～x)n layer thickness is 1nm (x=0.07), and first module number is 3, and growth is as the first multiple quantum well layer;
Step 6, the growth layer MQW that have chance with periodically, 700 DEG C of grow doping In growth the 2nd In xga (1～x)n layer (x=0.21), thickness is 1nm, 800 DEG C of the 2nd GaN layers that growth thickness is 10nm, In xga (1～x)n/GaN second unit number is 12, as the second multiple quantum well layer;
Step 7, temperature are raised to 830 DEG C, and pressure maintains 500mbar, the Al that the thickness of grow doping In and Al is 10nm yin xga (1-x-y)n, x=0.10, y=0.08 is as transition zone.
Step 8, again increase the temperature to 930 DEG C continue growth 25nm mix magnesium GaN as P type AlGaN layer;
Obtain LED epitaxial wafer 3.
Embodiment 4
Be with the difference of embodiment 3:
Step 5, temperature drop to mixing after In high temperature Multiple Quantum Well stress release layer of 900 DEG C of lasting growth 160nm, and adopting a GaN layer thickness is 50nm, an In xga (1～x)n layer thickness is 3nm (x=0.05～0.08), and first module number is 4, and growth is as the first multiple quantum well layer;
Step 6, the growth layer MQW that have chance with periodically, 800 DEG C of grow doping In growth the 2nd In xga (1～x)n layer (x=0.21), thickness is 4nm, 900 DEG C of the 2nd GaN layers that growth thickness is 14nm, In xga (1～x)n/GaN second unit number is 14, as the second multiple quantum well layer;
Step 7, temperature are raised to 830 DEG C, and pressure maintains 500mbar, the Al that the thickness of grow doping In and Al is 18nm yin xga (1-x-y)n, x=0.10, y=0.08 is as transition zone.
Step 8, again increase the temperature to 940 DEG C continue growth 25nm mix magnesium GaN as P type AlGaN layer;
Obtain LED epitaxial wafer 4.
Embodiment 5
Be with the difference of embodiment 2:
Step 5, an In xga (1～x)n layer thickness is 1nm (x=0.08), and first module number is 4, and growth is as the first multiple quantum well layer.
Step 7, temperature are raised to 840 DEG C, and pressure maintains 600mbar, growth In xga (1～x)n/Al yga (1～y)superlattice structure (superlattice In xga (1～x)n layer and superlattice Al yga (1～y)the thickness of N layer is 1nm, and superlattice number of unit is 4, superlattice In xga (1-x)x=0.05 in N layer, superlattice Al yga (1-y)y=0.05 in N layer), as transition zone.
Obtain LED epitaxial wafer 5.
Comparative example 1
Be not arrange transition zone with the difference of embodiment 1.Obtain LED epitaxial wafer 6.
LED epitaxial wafer 1～6 is respectively obtained to LED chip by the conventional method system of LED chip.Fig. 5 is the 28*28mil of LED epitaxial wafer 3 and LED epitaxial wafer 6 2the brightness of LED chip.As shown in Figure 5, by transition zone is set, by passing to after 350mA drive current, 28*28mil 2the luminosity of LED chip improves 4% from 218～220mW of LED epitaxial wafer 6 and reaches, 228～229mW of LED epitaxial wafer 3.As shown in Figure 6, pass to after 20mA drive current 08*10mil 2the brightness of LED chip is increased to 17.4～17.6mw of LED epitaxial wafer 3 from 16.6～16.8mW of LED epitaxial wafer 6.From Fig. 5 and 6,, by transition zone is set, the luminosity of LED chip is improved.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.

Claims (10)

1. a LED epitaxial layer structure, comprise multiquantum well region and be arranged at the P type AlGaN layer on described multiquantum well region end face, it is characterized in that, also comprise transition zone, described transition zone is arranged between described multiquantum well region and described P type AlGaN layer, and described transition zone is AlInGaN layer or AlGaN/InGaN superlattice structure.
2. LED epitaxial layer structure according to claim 1, is characterized in that, described transition zone is AlGaN/InGaN superlattice structure.
3. LED epitaxial layer structure according to claim 2, is characterized in that, described AlGaN/InGaN superlattice structure comprises multiple stacked superlattice unit successively,
Described superlattice unit comprises successively stacked superlattice In xga (1-x)n layer and superlattice Al yga (1-y)n layer,
Described superlattice In xga (1-x)the thickness of N layer is 1～3nm, described superlattice Al yga (1-y) thickness of N layer is 1～3nm, described superlattice unit number is 4～6,
Described superlattice In xga (1-x)x=0.05～0.15 in N layer, described superlattice Al yga (1-y)y=0.05～0.15 in N layer.
4. according to the LED epitaxial layer structure described in any one in claim 1～3, it is characterized in that, described AlInGaN layer is Al yin xga (1-x-y)n, wherein, x=0.05～0.15, y=0.05～0.15, described AlInGaN layer thickness is 6～18nm.
5. LED epitaxial layer structure according to claim 4, is characterized in that, the thickness of described P type AlGaN layer is 20～30nm.
6. LED epitaxial layer structure according to claim 4, is characterized in that, described multiquantum well region comprises the first stacked successively multiple quantum well layer and the second multiple quantum well layer,
Described the first multiple quantum well layer comprises multiple stacked first modules successively, and described first module comprises a stacked successively GaN layer and an In xga (1-x)n layer, a described In xga (1-x)x=0.05～0.08 in N layer,
The thickness of a described GaN layer is 30～50nm, a described In xga (1-x)the thickness of N layer is 1～3nm,
Described first module number is 3～4.
7. LED epitaxial layer structure according to claim 6, is characterized in that, described the second multiple quantum well layer comprises multiple stacked second units successively, and described second unit comprises the 2nd stacked successively In xga (1-x)n layer and the 2nd GaN layer,
Described the 2nd In xga (1-x)n layer thickness is 1～4nm, described the 2nd In xga (1-x)x=0.20～0.21 in N layer, described the 2nd GaN layer thickness is 10～14nm,
Described second unit number is 12～14.
8. the growing method of the LED epitaxial layer structure as described in any one in claim 1～7, comprise the step of producing multiquantum well region and being arranged at the P type AlGaN layer on described multiquantum well region end face, it is characterized in that, also be included in the step of the transition zone of growing between described multiquantum well region and described P type AlGaN layer, wherein, in the step of described transition zone of growing, growth temperature is 800～840 DEG C, and growth pressure is 200～600mbar.
9. method according to claim 8, is characterized in that, the growth temperature of the described P type AlGaN layer of growing is 930～950 DEG C; The step of described multiquantum well region of growing comprises growth stacked the first multiple quantum well layer and the second multiple quantum well layer successively, and the growth temperature of described the first multiple quantum well layer of growing is 700～900 DEG C;
The step of described the second multiple quantum well layer of growing comprises the multiple steps of stacked second unit successively of growth, and the step of the described second unit of growing comprises growth stacked the 2nd In successively xga (1-x)the step of N layer and the 2nd GaN layer, described the 2nd In grows xga (1-x)in the step of N layer, growth temperature is 700～800 DEG C; In the step of described the 2nd GaN layer of growing, growth temperature is 800～900 DEG C.
10. a LED chip, comprise LED epitaxial loayer, it is characterized in that, described LED epitaxial loayer has LED epitaxial layer structure as described in any one in claim 1～7, the brightness under 350mA drive current of preferred described LED chip is 228～230mW, and the brightness under 20mA drive current of preferred described LED chip is 17.4～17.6mW.
CN201410249647.8A 2014-06-06 2014-06-06 LED epitaxial layer structures, growing method and the LED chip with the structure Expired - Fee Related CN103996769B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410249647.8A CN103996769B (en) 2014-06-06 2014-06-06 LED epitaxial layer structures, growing method and the LED chip with the structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410249647.8A CN103996769B (en) 2014-06-06 2014-06-06 LED epitaxial layer structures, growing method and the LED chip with the structure

Publications (2)

Publication Number Publication Date
CN103996769A true CN103996769A (en) 2014-08-20
CN103996769B CN103996769B (en) 2017-07-07

Family

ID=51310868

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410249647.8A Expired - Fee Related CN103996769B (en) 2014-06-06 2014-06-06 LED epitaxial layer structures, growing method and the LED chip with the structure

Country Status (1)

Country Link
CN (1) CN103996769B (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104393129A (en) * 2014-11-06 2015-03-04 聚灿光电科技(苏州)有限公司 Epitaxial structure of LED chip and growth method of epitaxial structure
CN105350074A (en) * 2015-11-03 2016-02-24 湘能华磊光电股份有限公司 Epitaxial growth method for improving LED epitaxial crystal quality
CN105895752A (en) * 2016-04-28 2016-08-24 湘能华磊光电股份有限公司 Growing method for light-emitting composite layer, and LED epitaxial structure comprising light-emitting composite layer
CN106384766A (en) * 2016-11-04 2017-02-08 东莞市联洲知识产权运营管理有限公司 LED epitaxial wafer with high light emitting efficiency
CN106935690A (en) * 2017-03-21 2017-07-07 广东工业大学 A kind of epitaxial structure for improving ultraviolet LED optical output power
CN107863432A (en) * 2017-11-24 2018-03-30 厦门乾照光电股份有限公司 A kind of the LED preparation methods and LED chip of lifting LED performances
CN110676356A (en) * 2019-09-18 2020-01-10 陕西飞米企业管理合伙企业（有限合伙） Epitaxial method for improving LED brightness
CN111477727A (en) * 2020-04-30 2020-07-31 厦门乾照光电股份有限公司 L ED chip with improved current spreading layer and manufacturing method
CN112259651A (en) * 2020-10-21 2021-01-22 厦门乾照光电股份有限公司 LED chip with P-type insertion layer and manufacturing method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010021576A (en) * 2009-10-19 2010-01-28 Ricoh Co Ltd Method of manufacturing semiconductor device
CN101789473A (en) * 2010-02-23 2010-07-28 厦门大学 GaN-based vertical structure light-emitting diode and preparation method thereof
CN103050592A (en) * 2013-01-06 2013-04-17 湘能华磊光电股份有限公司 LED (Light Emitting Diode) epitaxial structure with P (Positive) type superlattice and preparation method thereof
CN103311394A (en) * 2013-06-09 2013-09-18 东南大学 GaN-based LED and epitaxial growth method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010021576A (en) * 2009-10-19 2010-01-28 Ricoh Co Ltd Method of manufacturing semiconductor device
CN101789473A (en) * 2010-02-23 2010-07-28 厦门大学 GaN-based vertical structure light-emitting diode and preparation method thereof
CN103050592A (en) * 2013-01-06 2013-04-17 湘能华磊光电股份有限公司 LED (Light Emitting Diode) epitaxial structure with P (Positive) type superlattice and preparation method thereof
CN103311394A (en) * 2013-06-09 2013-09-18 东南大学 GaN-based LED and epitaxial growth method thereof

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104393129A (en) * 2014-11-06 2015-03-04 聚灿光电科技(苏州)有限公司 Epitaxial structure of LED chip and growth method of epitaxial structure
CN105350074A (en) * 2015-11-03 2016-02-24 湘能华磊光电股份有限公司 Epitaxial growth method for improving LED epitaxial crystal quality
CN105895752B (en) * 2016-04-28 2018-08-21 湘能华磊光电股份有限公司 A kind of growing method of luminous composite layer and the LED epitaxial structure containing this structure
CN105895752A (en) * 2016-04-28 2016-08-24 湘能华磊光电股份有限公司 Growing method for light-emitting composite layer, and LED epitaxial structure comprising light-emitting composite layer
CN106384766A (en) * 2016-11-04 2017-02-08 东莞市联洲知识产权运营管理有限公司 LED epitaxial wafer with high light emitting efficiency
CN106935690A (en) * 2017-03-21 2017-07-07 广东工业大学 A kind of epitaxial structure for improving ultraviolet LED optical output power
CN106935690B (en) * 2017-03-21 2024-05-14 广东工业大学 Epitaxial structure for improving light output power of ultraviolet LED
CN107863432A (en) * 2017-11-24 2018-03-30 厦门乾照光电股份有限公司 A kind of the LED preparation methods and LED chip of lifting LED performances
CN107863432B (en) * 2017-11-24 2019-08-06 厦门乾照光电股份有限公司 A kind of LED preparation method and LED chip promoting LED performance
CN110676356A (en) * 2019-09-18 2020-01-10 陕西飞米企业管理合伙企业（有限合伙） Epitaxial method for improving LED brightness
CN110676356B (en) * 2019-09-18 2021-02-05 陕西飞米企业管理合伙企业（有限合伙） Epitaxial method for improving LED brightness
CN111477727A (en) * 2020-04-30 2020-07-31 厦门乾照光电股份有限公司 L ED chip with improved current spreading layer and manufacturing method
CN112259651A (en) * 2020-10-21 2021-01-22 厦门乾照光电股份有限公司 LED chip with P-type insertion layer and manufacturing method

Also Published As

Publication number Publication date
CN103996769B (en) 2017-07-07

Similar Documents

Publication Publication Date Title
CN103996769B (en) LED epitaxial layer structures, growing method and the LED chip with the structure
US8436334B2 (en) Fabrication of phosphor free red and white nitride-based LEDs
CN101488550B (en) Manufacturing method for LED in high In ingredient multiple InGaN/GaN quantum wells structure
US8629425B2 (en) Tunable wavelength light emitting diode
EP2802012B1 (en) Method of manufacturing a semiconductor device
CN104409587B (en) A kind of InGaN base blue-green light LED epitaxial structure and growing method
JP6587673B2 (en) Light emitting element
CN104409586A (en) GaN-based III-V compound semiconductor LED (light emitting diode) epitaxial wafer and production method thereof
JP2011517098A (en) Method for the production of semipolar (Al, In, Ga, B) N-based light emitting diodes
CN100580966C (en) Green light-emitting diode
CN106229390A (en) Growth method of GaN-based light emitting diode chip
CN104576852A (en) Stress regulation method for luminous quantum wells of GaN-based LED epitaxial structure
CN104409591A (en) GaN-based green light LED (light-emitting diode) epitaxial structure and manufacturing method thereof
CN103915534A (en) LED epitaxial wafer and forming method thereof
CN114883460A (en) Light emitting diode epitaxial wafer and preparation method thereof
US20120241753A1 (en) Semiconductor device and method for manufacturing same
CN108281519A (en) A kind of LED epitaxial slice and its manufacturing method
CN116722083A (en) Preparation method of high-radiation light-emitting diode and light-emitting diode
KR101198759B1 (en) Nitride light emitting device
KR100925164B1 (en) Method of forming p-type nitride semiconductor layer and light emitting device having the same
CN114141917A (en) Low-stress GaN-based light emitting diode epitaxial wafer and preparation method thereof
KR100881053B1 (en) Nitride based light emitting device
CN105118904B (en) LED epitaxial layer structures growing method and gained epitaxial layer structure and LED chip
CN110729383B (en) High-brightness light-emitting diode based on AlN/PSS composite substrate and preparation method thereof
CN116914052A (en) Epitaxial wafer for Micro-LED, preparation method of epitaxial wafer and Micro-LED

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20170707

CF01 Termination of patent right due to non-payment of annual fee