CN106384766A - LED epitaxial wafer with high light emitting efficiency - Google Patents
LED epitaxial wafer with high light emitting efficiency Download PDFInfo
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- CN106384766A CN106384766A CN201610963217.1A CN201610963217A CN106384766A CN 106384766 A CN106384766 A CN 106384766A CN 201610963217 A CN201610963217 A CN 201610963217A CN 106384766 A CN106384766 A CN 106384766A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials
Abstract
The invention discloses an LED epitaxial wafer with high light emitting efficiency. The LED epitaxial wafer comprises the components of a substrate, a buffer layer, a u-type GaN layer, an n-type GaN layer, a quantum well layer and a p-type GaN layer, wherein the substrate, the buffer layer, the u-type GaN layer, the n-type GaN layer, the quantum well layer and the p-type GaN layer are successively arranged from bottom to top along an epitaxial layer. The potential well in the quantum well is unchanged. The height of the potential well gradually reduces from bottom to top along the growth direction of the epitaxial layer. The LED epitaxial wafer has advantages of improving hole density in the quantum well and furthermore improving light emitting efficiency.
Description
Technical field
The present invention relates to field of semiconductor devices, particularly to a kind of LED.
Background technology
Gallium nitride (GaN) and its ternary-alloy material are widely used in the photoelectric device of short wavelength, and its material behavior is extremely
Concern, it is important that improving GaN material quality and the quantum efficiency of LED is photoelectric transformation efficiency.For LED component, p-type material
Hole concentration directly affects the important parameters such as luminous efficiency and the intensity of device, and the core work region of GaN base LED component is
One p-n junction, the therefore control to the doping of GaN material p-type and N-shaped doping are particularly important, and N-shaped doping techniques are fairly simple, generally
Be doped using donor element Si, but p-type doping recipient element be deep energy level acceptor, its activation energy high so that p-type
Doping is difficult, produces that hole concentration is low, simultaneously as N-shaped doping is simple, the electron concentration of generation is high, electrons spread to p layer,
Hole can be consumed in p layer, reduce hole concentration, so electron hole pair quantity is few in SQW, luminous efficiency is low.
Content of the invention
It is an object of the invention to provide a kind of LED with high-luminous-efficiency, improve hole concentration in SQW,
And then raising luminous efficiency.
For achieving the above object, the present invention adopts following technological means：
A kind of LED with high-luminous-efficiency, includes from top to bottom successively along outer layer growth direction：Substrate,
Cushion, u-shaped GaN layer, n-type GaN layer, quantum well layer, p-type GaN layer, in quantum well layer, potential well is constant, and barrier height is along extension
The layer direction of growth is gradually lowered from top to bottom.
Preferably, quantum well layer trap builds periodicity for 10～15.
Preferably, the well layer thickness 3nm～5nm in each cycle, the barrier layer thickness 15nm～20nm in each cycle.
Preferably, in quantum well layer, well layer material is InxGa1-xN, x=0.15～0.2, barrier material layer is
AlyInzGa1-y-zN, wherein y=0～0.2, z=0～0.05, and y is gradually lowered from top to bottom along outer layer growth direction, z by
Cumulative big.
Preferably, barrier material layer is AlyInzGa1-y-zIn N, y>1-y-z=1-y when 0, x>1-y-z=1-x when 0.
Preferably, y>When 0, quantum well layer trap is built periodicity and is 5～6；x>When 0, quantum well layer trap build periodicity be 5～
6.
Preferably, p-type GaN layer includes：Low doping concentration p-type InuGa1-uN shell, p-type Al of high-dopant concentrationvGa1-vN/
InuGa1-uN superlattice layer, wherein u=0～0.2, v=0.2～0.3, and v are maximum near quantum well layer side, along epitaxial layer
The direction of growth gradually decreases from top to bottom.
Preferably, superlattice period 5～10.
Preferably, described n-type GaN layer includes the n-GaN layer of low-doped Si concentration, the AlGaN layer of Si doping and highly doped
Form n-type GaN layer and u-shaped GaN layer between the n-GaN layer of miscellaneous Si concentration, and the n-GaN layer of high-dopant concentration and quantum well layer
The Electron Extended layer of alternate cycles.
Preferably, n-type GaN layer and u-shaped GaN layer alternate cycles periodicity are 5～10.
With respect to prior art, the present invention has advantages below：
In SQW of the present invention, potential well is constant, and barrier height is gradually lowered from top to bottom along outer layer growth direction, quantum
It is connected with N-shaped GaN below trap, due to Si doping easily, the electron concentration of generation is high, is diffused into p layer and can consume hole for N-shaped GaN,
The SQW side barrier height being connected with N-shaped GaN is big, to a certain degree reduces electron concentration, reduces the consumption to p layer hole,
It is connected with p-type GaN above SQW, p-type GaN is difficult because Mg adulterates, and the hole concentration of generation is low, the amount being connected with p-type GaN
Sub- trap side barrier height is low it is allowed to the more SQW that flows in hole is combined with electronics, improves luminous efficiency, barrier height simultaneously
Along the gradual change of outer layer growth direction, barrier height gradually changes, and will not significantly increase quantum well layer resistance, and therefore, the present invention exists
In the case of ensureing forward voltage, effectively increase luminous efficiency.
Meanwhile, if p-type GaN layer includes：Low doping concentration p-type InuGa1-uN shell, p-type Al of high-dopant concentrationvGa1-vN/
InuGa1-uN superlattice layer, wherein u=0～0.2, v=0.2～0.3, and v are maximum near quantum well layer side, along epitaxial layer
The direction of growth gradually decreases from top to bottom.The addition of In makes p layer crystalline quality more preferably, reduces defect, simultaneously the addition fall of In
The low activation energy of Mg, increased hole concentration；AlvGa1-vN/InuGa1-uN super lattice layer structures form hole micro-strip, further
Reduce the activation energy of Mg, increase hole concentration, Al content gradually variational, on the one hand effectively stop the electronics that the diffusion of n-layer GaN comes, separately
On the one hand decrease the barrier effect in the hole to p layer, so p laminar flow is effectively increased to the hole of quantum well layer, light
Efficiency is effectively improved.
Additionally, forming the electricity of N-shaped GaN and u-shaped GaN alternate cycles between the n-GaN layer of high-dopant concentration and quantum well layer
Sub- extension layer, so that electronics is laterally more uniformly being distributed, also increases the probability that in SQW, electron hole pair is combined, increases
Plus luminous efficiency.
Brief description
Fig. 1 is the epitaxial slice structure schematic diagram of the embodiment of the present invention 1；
Fig. 2 is the epitaxial wafer p-type GaN layer structural representation of the embodiment of the present invention 2；
Fig. 3 is the epitaxial wafer n-type GaN layer structural representation of the embodiment of the present invention 3；
Fig. 4 is the epitaxial slice structure schematic diagram of the embodiment of the present invention 5 (comparative example).
Specific embodiment
Below in conjunction with the accompanying drawings and embodiment is introduced to the present invention, embodiment is only limitted to the present invention is explained,
Any restriction is not carried out to the present invention.
As shown in Fig. 1 to Fig. 4, a kind of LED with high-luminous-efficiency, along outer layer growth direction from top to bottom
Include successively：Substrate 100, cushion 200, u-shaped GaN layer 300, n-type GaN layer 400, quantum well layer 500, p-type GaN layer 600, amount
In sub- well layer, potential well is constant, and barrier height is gradually lowered from top to bottom along outer layer growth direction.
In quantum well layer 500, well layer 510 material can be InxGa1-xN, x=0.15～0.2, barrier layer 520 material is
AlyInzGa1-y-zN, wherein y=0～0.2, z=0～0.05, along outer layer growth direction, y is gradually lowered from top to bottom, and z is gradually
Increase, constant to realize potential well in quantum well layer, barrier height is gradually lowered from top to bottom along outer layer growth direction, SQW
In layer 500, well layer 510 and barrier layer 520 periodicity can be 10～15, the well layer 510 thickness 3nm～5nm in each cycle, often
Barrier layer 520 thickness 15nm～20nm in the individual cycle.
Preferred version, barrier layer 520 materials A lyInzGa1-y-zN, y>1-y-z=1-y when 0, x>1-y-z=1-x when 0, y>0
When, the well layer 510 in quantum well layer 500 and barrier layer 520 periodicity are 5～6, i.e. barrier layer 520 in front 5～6 trap base cycles
Material is AlyGa1-yN, y=0～0.2, AlyGa1-yN is big with respect to GaN barrier height, and Al content is higher, and barrier height is got over
Greatly, AlyGa1-yN potential barrier plays and reduces electron concentration effect to a certain extent, reduces it to the quantity of p laminar flow, y is gradually decrease to
After 5th or 6 cycle, y is reduced to 0, and barrier layer 520 material becomes conventional GaN material, maintains 2～3 cycles, after 5～6
In the individual trap base cycle, barrier layer 520 material is InzGa1-zN, z=0～0.05, z is gradually increased, maximum at p layer GaN,
InzGa1-zN is little with respect to GaN barrier height, and the higher barrier height of In content is less, InzGa1-zN potential barrier makes hole more hold
Easily pass through, increase the hole concentration in quantum well layer 500, barrier height gradual change in whole quantum well layer 500, prevent resistance liter
High.
Another preferred version, p-type GaN layer 600 includes：Low doping concentration p-type InuGa1-uN shell 610, Mg doping content
1018cm-3～1019cm-3, p-type Al of high-dopant concentrationvGa1-vN/InuGa1-uN superlattice layer 620, Mg doping content 1019cm-3
～1020cm-3, wherein u=0～0.2, v=0.2～0.3, superlattice period 5～10, and v is near quantum well layer side
Greatly, gradually decrease from top to bottom along outer layer growth direction, AlvGa1-vN barrier height is big, and n-type GaN layer 400 diffusion is come
Electronics play barrier effect, but simultaneously also can to the hole vectors of p-type GaN layer 600 diffusion of sub- well layer 500 play certain
Inhibition, the structure of Al content gradual change makes can effectively reduce electron concentration, reduces the inhibition to hole again,
And the addition of In makes lattice quality improve in this p-type GaN layer 600, reduce defect, In reduces the activation energy of Mg simultaneously,
Reduce the activation energy of Mg in conjunction with superlattice structure hole micro-strip further, improve hole concentration, and then increase luminous efficiency.
Another preferred version, n-type GaN layer 400 includes the n-GaN layer 410 of low-doped Si concentration, the AlGaN layer of Si doping
420, Si doping contents 1016cm-3～1017cm-3, and the n-GaN layer 430 of highly doped Si concentration, Si doping content 1017cm-3
～1018cm-3, and between the n-GaN layer 430 of high-dopant concentration and quantum well layer 500, form N-shaped GaN 441 and u-shaped GaN
The Electron Extended layer 440 of 442 alternate cycles, so that electronics is laterally more uniformly being distributed, also increases electronics in SQW
Hole, to compound probability, increases luminous efficiency.Embodiment 1
As shown in Figure 1, a kind of LED, includes from top to bottom successively along outer layer growth direction：Sapphire Substrate
100, GaN cushions 200, u-shaped GaN layer 300, n-type GaN layer 400, quantum well layer 500, p-type GaN layer 600, quantum well layer 500
In, well layer 510 material is InxGa1-xN, x=0.2, thickness 3.5nm, barrier layer 520 materials A lyInzGa1-y-zN, thickness 15nm, y>0
When, the well layer 510 in quantum well layer 500 and barrier layer 520 periodicity are 5, and in front 5 trap base cycles, barrier layer 520 material is
AlyGa1-yN, y=0～0.2 and be gradually reduced, from y is gradually decrease to the 6th cycle after the 5th cycle, y is reduced to 0, builds
Layer 520 material become conventional GaN material, maintain 2 cycles, after in 5 trap base cycles barrier layer 520 material be InzGa1-zN, z
=0～0.05, z are gradually increased, maximum at p layer GaN.P-type GaN layer 600 includes low doping concentration GaN layer 610,
AlvGa1-vN electron barrier layer 620, Mg doping content 1018cm-3cm-3, v=0.25, high-dopant concentration GaN layer 630, Mg adulterates
Concentration 1020cm-3.N-type GaN layer 400 is divided into low doping concentration n-GaN layer 410, the AlGaN layer 420 of Si doping, Si doping content
1017cm-3, the n-GaN layer 430 of high-dopant concentration, Si doping content 1018cm-3.
Embodiment 2
As shown in Figure 2, on the basis of embodiment 1, p-type GaN layer 600 includes：Low doping concentration p-type InuGa1-uN shell
610, Mg doping contents 1018cm-3, p-type Al of high-dopant concentrationvGa1-vN/InuGa1-uN superlattice layer 620, Mg doping content
1020cm-3, wherein u=0.1, v=0.2～0.3, superlattice period 8, and v is maximum near quantum well layer side, along extension
The layer direction of growth gradually decreases from top to bottom.
Embodiment 3
As shown in Figure 3, on the basis of embodiment 1, n-type GaN layer 400 includes the n-GaN layer 410 of low-doped Si concentration,
The AlGaN layer 420 of Si doping, Si doping content 1017cm-3, and the n-GaN layer 430 of highly doped Si concentration, Si doping content
1018cm-3, and between the n-GaN layer 430 of high-dopant concentration and quantum well layer 500, form N-shaped GaN441 and u-shaped GaN 442
The Electron Extended layer 440 of alternate cycles, the alternate cycles cycle 10.
Embodiment 4
The epitaxial slice structure of 1-3 is formed in conjunction with the embodiments.
Embodiment 5
As shown in Figure 4, the conventional LED structure of tradition, i.e. Sapphire Substrate 100, GaN cushion are adopted as a comparison case
200, u-shaped GaN layer 300, n-type GaN layer 400, quantum well layer 500, p-type GaN layer 600, wherein quantum well layer 500 are InxGa1- xN/GaN formation is well layer 510 is InxGa1-xN, x=0.2, thickness 3.5nm, barrier layer 520 is GaN, thickness 15nm, and trap builds potential barrier
Highly all constant, p-type GaN layer 600 includes low doping concentration GaN layer 610, AlvGa1-vN electron barrier layer 620, Mg doping content
1018cm-3cm-3, v=0.25, high-dopant concentration GaN layer 630, Mg doping content 1020cm-3.N-type GaN layer 400 is divided into low-doped
Concentration n-GaN layer 410, the AlGaN layer 420 of Si doping, Si doping content 1017cm-3, the n-GaN layer 430, Si of high-dopant concentration
Doping content 1018cm-3.
LED epitaxial structure obtained by embodiment 1-5 is carried out identical chip manufacture technique and forms chip, adopt
Integrating sphere records the luminosity of obtained LED under the conditions of driving current 350mA, obtains each embodiment phase with comparative example (i.e.
Embodiment 5) brightness ratio as shown in table 1, it follows that the present invention effectively increases luminous efficiency.
Table 1
| Embodiment | Each embodiment and comparative example brightness ratio |
| Embodiment 1 | 1.043 |
| Embodiment 2 | 1.058 |
| Embodiment 3 | 1.047 |
| Embodiment 4 | 1.061 |
| Embodiment 5 (comparative example) | 1.000 |
Claims (10)
1. a kind of LED with high-luminous-efficiency, includes from top to bottom successively along outer layer growth direction：Substrate, delays
Rush layer, u-shaped GaN layer, n-type GaN layer, quantum well layer, p-type GaN layer it is characterised in that：In quantum well layer, potential well is constant, and potential barrier is high
Degree is gradually lowered from top to bottom along outer layer growth direction.
2. the LED with high-luminous-efficiency according to claim 1 it is characterised in that：Quantum well layer trap builds week
Issue is 10～15.
3. the LED with high-luminous-efficiency according to claim 1 it is characterised in that：Trap in each cycle
Thickness degree 3nm～5nm, the barrier layer thickness 15nm～20nm in each cycle.
4. the LED with high-luminous-efficiency according to claim 1 it is characterised in that：In quantum well layer, well layer
Material is InxGa1-xN, x=0.15～0.2, barrier material layer is AlyInzGa1-y-zN, wherein y=0～0.2, z=0～0.05, and
Along outer layer growth direction, y is gradually lowered from top to bottom, and z is gradually increased.
5. the LED with high-luminous-efficiency according to claim 4 it is characterised in that：Barrier material layer is
AlyInzGa1-y-zIn N, y>1-y-z=1-y when 0, x>1-y-z=1-x when 0.
6. the LED with high-luminous-efficiency according to claim 5 it is characterised in that：y>When 0, quantum well layer
Trap is built periodicity and is 5～6；x>When 0, quantum well layer trap is built periodicity and is 5～6.
7. the LED with high-luminous-efficiency according to claim 1 it is characterised in that：P-type GaN layer includes：Low
Doping content p-type InuGa1-uN shell, p-type Al of high-dopant concentrationvGa1-vN/InuGa1-uN superlattice layer, wherein u=0～0.2,
V=0.2～0.3, and v is maximum near quantum well layer side, gradually decreases from top to bottom along outer layer growth direction.
8. the LED with high-luminous-efficiency according to claim 7 it is characterised in that：Superlattice period 5～10
Individual.
9. the LED with high-luminous-efficiency according to claim 1 it is characterised in that：Described n-type GaN layer bag
Include the n-GaN layer of low-doped Si concentration, the AlGaN layer of Si doping and the n-GaN layer of highly doped Si concentration, and highly doped dense
Form the Electron Extended layer of n-type GaN layer and u-shaped GaN layer alternate cycles between the n-GaN layer of degree and quantum well layer.
10. the LED with high-luminous-efficiency according to claim 9 it is characterised in that：N-type GaN layer and u-shaped
GaN layer alternate cycles periodicity is 5～10.
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