CN103199169A

CN103199169A - Epitaxial growth structure in GaN base green-light light emitting diode (LED) with P-type GaN

Info

Publication number: CN103199169A
Application number: CN2013100798430A
Authority: CN
Inventors: 李鸿渐; 李盼盼; 李志聪; 孙一军; 王国宏
Original assignee: YANGZHOU ZHONGKE SEMICONDUCTOR LIGHTING CO Ltd
Current assignee: YANGZHOU ZHONGKE SEMICONDUCTOR LIGHTING CO Ltd
Priority date: 2013-03-13
Filing date: 2013-03-13
Publication date: 2013-07-10

Abstract

The invention provides an epitaxial growth structure in a GaN base green-light light emitting diode (LED) with P-type GaN, and relates to the technical field of growth of the P-type GaN applied in a high-brightness GaN base green-light LED. The epitaxial growth structure in the GaN base green-light LED with the P-type GaN comprises a GaN nucleating layer, an un-doped GaN layer, an n-type GaN layer, an InGaN/GaN multiple-quantum-well active layer, the P-type GaN and an InGaN current tunneling layer, wherein the GaN nucleating layer, the un-doped GaN layer, the n-type GaN layer, the InGaN/GaN multiple-quantum-well active layer, the P-type GaN and the InGaN current tunneling layer sequentially grow on a substrate. The epitaxial growth structure in the GaN base green-light LED with the P-type GaN is characterized in that the P-type GaN is composed of a low-temperature P-type GaN hole injection layer, a P-type Al(In) GaN electron barrier layer and a P-type GaN hole activation layer. The P-type GaN with the structure is applied in the growth of the high-brightness GaN base green-light LED. The brightness of a 520 nm green-light chip with the size of 20mil*40mil reaches 75mw under a 120mA current in a COW. After the epitaxial growth structure is encapsulated, external quantum efficiency reaches 31 percent and reaches the domestic leading level. Meanwhile, anti-static performance of the green-light chip with the size of 20mil*40mil is improved to over 8000V.

Description

Has the epitaxial growth structure in the GaN base green light LED of P type GaN

Technical field

The present invention relates to a kind of growing technology field that is applied in the P type GaN in the high brightness GaN base green light LED.

Background technology

In the InGaN green light LED in order to obtain the higher quantum well of In component, the growth temperature of quantum well active area far low and P type Al (In) GaN electronic barrier layer and P type GaN, so its crystal mass is relatively poor, simultaneously, P type Al (In) GaN electronic barrier layer and the P type GaN of higher temperatures growth can have fragmentation effect to active area, influence its crystal mass and radiation recombination efficient.Moreover P type Al (In) the GaN electronic barrier layer that generally adopts in the InGaN green light LED epitaxial structure influences the hole and is injected into the active area from P type GaN because lattice mismatch can cause to be with and be bent downwardly.

Also be the breach that people probe into the high brightness green light LED and how to improve above-mentioned factor.

Summary of the invention

The present invention seeks to propose to overcome the epitaxial growth structure in the GaN base green light LED with P type GaN of above existing defective.

The present invention includes the GaN nucleating layer that is grown in successively on the substrate, non-Doped GaN layer, n type GaN layer, the InGaN/GaN multiple quantum well active layer, P type GaN and InGaN current tunnelling layer, it is characterized in that described P type GaN is by low temperature P type GaN hole injection layer, P type Al (In) GaN electronic barrier layer and P type GaN hole active layer are formed, described low temperature P type GaN hole injection layer is grown on the InGaN/GaN multiple quantum well active layer, P type Al (In) GaN electronic barrier layer is grown on the low temperature P type GaN hole injection layer, and P type GaN hole active layer is grown on P type Al (In) the GaN electronic barrier layer.

Characteristics of the present invention are that P type GaN comprises three parts: low temperature P type GaN hole injection layer, P type Al (In) GaN electronic barrier layer and P type GaN hole active layer, introduce low temperature P type Ga hole injection layer and play effective reductions P type AlGaN EBL and P type GaN growth course to the quantum well destruction, the raising luminosity.The hole concentration height of P type GaN under the low temperature can improve the injection efficiency in hole simultaneously.

Adopt above-mentioned P type GaN to be applied to the epitaxial growth of InGaN green light LED, have the effect that improves green light LED luminous efficiency and antistatic property.Adopt the P type GaN of above structure to be applied to the growth of high brightness GaN base green light LED, the brightness of green glow chip COW under 120mA of the 520nm of 20mil*40mil reaches 75mW, and encapsulation back external quantum efficiency reaches 31%, reaches leading domestic level.The 20mil*40mil antistatic property is brought up to more than the 8000V simultaneously.

Description of drawings

Fig. 1 is a kind of structural representation of the present invention.

Fig. 2 is applied to InGaN green light LED 20mil*40mil size chip ESD percent of pass curve chart for adopting Ben Faken.

Embodiment

Among Fig. 1,1 is Sapphire Substrate, 2 is the GaN nucleating layer, 3 is non-Doped GaN layer, and 4 is n type GaN layer, and 5 is the InGaN/GaN multiple quantum well active layer, 6 (a) are low temperature P type GaN hole injection layer, 6 (b) are P type Al (In) GaN electronic barrier layer, and 6 (c) are P type GaN hole active layer, and 7 is InGaN current tunnelling layer.

From Fig. 1 as seen, on substrate 1 successively growth GaN nucleating layer 2, non-Doped GaN layer 3, n type GaN layer 4, InGaN/GaN multiple quantum well active layer 5, P type GaN, low temperature P type GaN hole injection layer 6 (a), P type Al (In) GaN electronic barrier layer 6 (b), P type GaN hole active layer 6 (c) and InGaN current tunnelling layer 7 arranged.

From Fig. 2 as seen: yield is still 100% in reverse voltage 8000V for the ESD test of LED with low temperature p-type GaN, and the ESD test percent of pass that does not have the LED of low temperature p-type GaN constantly reduces along with the rising of reverse voltage.So the ESD characteristic of LED that low temperature p-type GaN arranged has obtained very big improvement with respect to traditional LED.

Claims

1. has the epitaxial growth structure in the GaN base green light LED of P type GaN, comprise the GaN nucleating layer that is grown in successively on the substrate, non-Doped GaN layer, n type GaN layer, the InGaN/GaN multiple quantum well active layer, P type GaN and InGaN current tunnelling layer, it is characterized in that described P type GaN is by low temperature P type GaN hole injection layer, P type Al (In) GaN electronic barrier layer and P type GaN hole active layer are formed, described low temperature P type GaN hole injection layer is grown on the InGaN/GaN multiple quantum well active layer, P type Al (In) GaN electronic barrier layer is grown on the low temperature P type GaN hole injection layer, and P type GaN hole active layer is grown on P type Al (In) the GaN electronic barrier layer.