CN203192834U

CN203192834U - Epitaxial structure in a high-brightness GaN-based green LED

Info

Publication number: CN203192834U
Application number: CN 201320113988
Authority: CN
Inventors: 李盼盼; 李鸿渐; 李志聪; 孙一军; 王国宏
Original assignee: YANGZHOU ZHONGKE SEMICONDUCTOR LIGHTING CO Ltd
Current assignee: YANGZHOU ZHONGKE SEMICONDUCTOR LIGHTING CO Ltd
Priority date: 2013-03-13
Filing date: 2013-03-13
Publication date: 2013-09-11
Anticipated expiration: 2023-03-13

Abstract

An epitaxial structure in a high-brightness GaN-based green LED relates to the technical field of the epitaxial growth of the GaN-based green LED. The epitaxial structure comprises a GaN nucleating layer, a non-doped GaN layer, an n-type GaN layer, an InGaN/GaN multi-quantum well active layer, a p-type AlGaN electronic barrier layer, a P-type GaN layer, and an InGaN current tunneling layer, which are sequentially grown on a substrate. The epitaxial structure is characterized in that an Al(In)GaN/GaN superlattice interposed layer is grown between the InGaN/GaN multi-quantum well active layer and the p-type AlGaN electronic barrier layer. The epitaxial structure is capable of effectively reducing diffusion of Mg to MQWs during the growing process of the p-type AlGaN electronic barrier layer and the P-type GaN layer, increasing the non-radiation composite efficiency in multi-quantum wells, and reducing the phenomenon of insufficient hole injection due to a gravity field caused by mismatching of the p-type AlGaN electronic barrier layer and multi-quantum well crystal lattices, thereby further effectively improving the light emitting and especially improving InGaN green LEDs.

Description

Epitaxial structure in a kind of high brightness GaN base green light LED

Technical field

The utility model relates to the growth technology field of GaN base green light LED.

Background technology

In MOCVD, Mg can spread to Multiple Quantum Well in p-type AlGaN EBL and the p-type GaN growth course, forms impurity defect.Because Mg plays the effect at non-radiative center in Multiple Quantum Well, can reduce radiation recombination efficient.Simultaneously, because the polarized electric field that p-type AlGaN EBL and Multiple Quantum Well lattice mismatch cause can reduce the injection efficiency in hole.InGaN base green glow is because the quantum trap growth temperature is low, and crystal mass is relatively poor, and above-mentioned two kinds of phenomenons are very obvious.

Also be the breach that people probe into the high brightness green light LED and how to improve above-mentioned factor, how reduce the diffusion effect of Mg and reduce p-type AlGaN EBL and Multiple Quantum Well lattice mismatch effect is a present main difficult technical.

Summary of the invention

The utility model purpose is to propose a kind ofly to reduce the diffusion effect of Mg and reduce p-type AlGaN EBL and Multiple Quantum Well lattice mismatch effect, can improve the epitaxial structure of green light LED brightness.

The utility model is included on the substrate Grown GaN nucleating layer, non-Doped GaN layer, n type GaN layer, InGaN/GaN multiple quantum well active layer, p-type AlGaN electronic barrier layer, p-type GaN layer and InGaN current tunnelling layer successively, is characterized in: Al (In) the GaN/GaN superlattice insert layer of growing between described InGaN/GaN multiple quantum well active layer and p-type AlGaN electronic barrier layer.

Characteristics of the present utility model are Al (In) the GaN/GaN superlattice insert layers of growing between outer layer growth InGaN/GaN multiple quantum well active layer and p-type AlGaN electronic barrier layer.After the utility model has been introduced Al (In) GaN/GaN superlattice insert layer, owing among the AlGaN Mg unit is have barrier effect, can reduce effectively that Mg spreads to MQWs in p-type AlGaN electronic barrier layer and the p-type GaN growth course, improve the non-radiative combined efficiency in the Multiple Quantum Well; Can reduce simultaneously the hole that gravitational field that p-type AlGaN electronic barrier layer and Multiple Quantum Well lattice mismatch cause causes and inject not enough phenomenon, so effectively improve luminous, InGaN green light LED particularly.

Description of drawings

Fig. 1 is a kind of structural representation of the present utility model.

Fig. 2 is the epitaxial wafer PL test intensity contrast curve chart of the utility model GaN base green light LED and traditional GaN base green light LED.

Fig. 3 is the Output optical power correlation curve figure of the utility model GaN base green light LED and traditional GaN base green light LED.

Embodiment

Example one: among Fig. 1,1. Sapphire Substrate; 2.GaN nucleating layer; 3. non-Doped GaN layer; 4.n type GaN layer; 5.InGaN/GaN multiple quantum well active layer; 6a is Al (In) GaN superlattice insert layers; 6b is GaN superlattice insert layers; 7. p-type AlGaN electronic barrier layer; 8. p-type GaN layer; 9.InGaN current tunnelling layer.

Growth has GaN nucleating layer 2, non-Doped GaN layer 3, n type GaN layer 4, InGaN/GaN multiple quantum well active layer 5, Al (In) GaN superlattice insert layer 6a, GaN superlattice insert layer 6b, p-type AlGaN electronic barrier layer 7, p-type GaN layer 8 and InGaN current tunnelling layer 9 successively on substrate 1.

Example two: among Fig. 1,1. Sapphire Substrate; 2.GaN nucleating layer; 3. non-Doped GaN layer; 4.n type GaN layer; 5.InGaN/GaN multiple quantum well active layer; 6a is GaN superlattice insert layers; 6b is Al (In) GaN superlattice insert layers; 7. p-type AlGaN electronic barrier layer; 8. p-type GaN layer; 9.InGaN current tunnelling layer.

Growth has GaN nucleating layer 2, non-Doped GaN layer 3, n type GaN layer 4, InGaN/GaN multiple quantum well active layer 5, GaN superlattice insert layer 6a, Al (In) GaN superlattice insert layer 6b, p-type AlGaN electronic barrier layer 7, p-type GaN layer 8 and InGaN current tunnelling layer 9 successively on substrate 1.

Fig. 2 is for having the epitaxial wafer PL test intensity contrast curve chart of Al (In) GaN/GaN superlattice insert layer GaN base green light LED and traditional GaN base green light LED; As seen from the figure: have the PL intensity of Al (In) GaN/GaN superlattice insert layer GaN base green light LED stronger.

Fig. 3 is for having the Output optical power correlation curve figure of Al (In) GaN/GaN superlattice insert layer GaN base green light LED and traditional GaN base green light LED; As seen from the figure: have the brightness of Al (In) GaN/GaN superlattice insert layer GaN base green light LED and be significantly improved.

Claims

1. the epitaxial structure in the high brightness GaN base green light LED, be included on the substrate Grown GaN nucleating layer, non-Doped GaN layer, n type GaN layer, InGaN/GaN multiple quantum well active layer, p-type AlGaN electronic barrier layer, p-type GaN layer and InGaN current tunnelling layer successively, Al (In) GaN/GaN superlattice insert layer is characterized in that growing between described InGaN/GaN multiple quantum well active layer and p-type AlGaN electronic barrier layer.

2. according to the epitaxial structure in the described high brightness GaN base of claim 1 green light LED, it is characterized in that the layer at described InGaN/GaN multiple quantum well active layer outgrowth Al (In) GaN, at Al (In) GaN layer outgrowth GaN layer, described p-type AlGaN electronic barrier layer is grown in outside the GaN layer.

3. according to the epitaxial structure in the described high brightness GaN base of claim 1 green light LED, it is characterized in that at described InGaN/GaN multiple quantum well active layer outgrowth GaN layer, at GaN layer outgrowth Al (In) GaN layer, described p-type AlGaN electronic barrier layer is grown in outside Al (In) the GaN layer.